CN101882591A - Detection method of wafer - Google Patents
Detection method of wafer Download PDFInfo
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- CN101882591A CN101882591A CN2009101379917A CN200910137991A CN101882591A CN 101882591 A CN101882591 A CN 101882591A CN 2009101379917 A CN2009101379917 A CN 2009101379917A CN 200910137991 A CN200910137991 A CN 200910137991A CN 101882591 A CN101882591 A CN 101882591A
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Abstract
The invention discloses a detection method of a wafer, which comprises the following steps: firstly the wafer is provided; the wafer comprises a plurality of exposure areas, and the exposure areas comprise 2*N chips which are arranged in 2 lines in a first direction and in N lines in a second direction, wherein N is a positive integer more than 2, and the first direction is vertical to the second direction; and then the wafer is screened along the scanning direction, wherein the scanning direction is different from the first direction.
Description
Technical field
The invention relates to a kind of semi-conductive detection method, and particularly relevant for a kind of detection method of wafer.
Background technology
Flourish along with semiconductor technology, the circuit element design of semiconductor element trend high integration, and one of very important step of tool is photoetching process (photolithography) in whole semiconductor technology.The pattern of each rete of semiconductor component structure all is to be produced by photoetching process.Therefore, with the accuracy of the design transfer on the mask to the wafer (wafer), just occupy important status.If the pattern on the mask is incorrect, then can causes the pattern on the wafer incorrect, thereby influence the characteristic of wafer.
In general,, can detect step, to determine that the pattern on the wafer serves as correct to wafer with after the design transfer on the mask is to the wafer.Image subtracts each other (image subtraction) and is one of detection method commonly used at present.For instance, wafer has a plurality of exposure regions, each exposure region comprises 2N the chip that is arranged in 2 " OK " and N " row ", detect board can be under a plurality of continuous time points along each exposure region of scanning direction of " row ", be positioned at image with acquisition with a plurality of chips of delegation.After obtaining a plurality of images by a plurality of continuous time points, carry out the image subtraction step, just the image of a time point gained and the image of a time point gained are thereafter carried out overlap ratio, subtract each other data to obtain the continuous image of many groups.In this detection method, if subtracting each other data, image shows to have the difference place between two images, then represent to have defective on the chip of corresponding this image.
Yet when on the mask during defectiveness, this defective can repeatedly appear on the same position of each exposure region, supposes that this defective repeatedly appears on the same position of second row of each exposure region.Therefore, when detecting board along the scanning direction wafer of " row ", because the same position of second row of each exposure region has defective, the former image that is retrieved by second row of each exposure region is identical, it is all identical to make that the image of any two continuous images subtracts each other data, and can't pick out the existence that disappearance is arranged on the wafer.In other words, the detection method of the above-mentioned wafer pattern that can't positively detect on the wafer has disappearance.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of detection method of wafer, to detect the defective on the wafer.
The present invention proposes a kind of detection method of wafer.At first, provide wafer, wafer comprises a plurality of exposure regions, and each exposure region is included in and is arranged as 2 row on the first direction, is arranged as 2 capable * N of N chip on second direction, and wherein N is the positive integer greater than 2, and first direction is vertical with second direction.Then, along scanning direction scanning wafer, wherein the scanning direction is different from first direction.
In one embodiment of this invention, above-mentioned scanning direction equals second direction.
The present invention proposes the detection method of another wafer.At first, wafer is provided, wafer comprises a plurality of exposure regions, exposure region be along first direction expose form, each exposure region is included in and is arranged as 2 row on the first direction, is arranged as 2 capable * N of N chip on second direction, wherein N is the positive integer greater than 2, and first direction is vertical with second direction.Then, directed wafer makes the chip of each exposure region of wafer be arranged as 2 row on third direction, upwards be arranged as N in the four directions capable, and wherein third direction is different from first direction, and the four directions is to being different from second direction, and third direction and four directions are to vertical.Then, along scanning direction scanning wafer, wherein the scanning direction is not equal to third direction.
The invention allows for a kind of detection method of wafer.At first, provide wafer, wafer is included in and is arranged as the capable a plurality of chips of M on the first direction, and M is the positive integer greater than 2.Then, along first direction scanning wafer, obtaining M image under a plurality of continuous time points, and with the image of a time point and thereafter the image of a time point carry out overlapping comparison step, to obtain (M-1) individual comparative result, wherein (M-1) individual comparative result is all identical.Change the scanning direction then, the scanning direction after wherein changing is not equal to first direction.
Based on above-mentioned, the detection method of wafer of the present invention is that the arrangements of chips of utilizing the scanning direction of scanning wafer to be different from exposure region is the directions of 2 row, whether detects on the wafer defectiveness.And the detection method of wafer of the present invention can detect the defective that repeats on the wafer, the defective that all has such as each exposure region that causes wafer because of the defective on the mask.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the schematic diagram according to the detection method of a kind of wafer of the first embodiment of the present invention.
Fig. 2 A to Fig. 2 C is the schematic flow sheet according to the detection method of a kind of wafer of the second embodiment of the present invention.
Fig. 3 A to Fig. 3 D is the schematic flow sheet according to the detection method of a kind of wafer of the third embodiment of the present invention.
[main element symbol description]
10,10a: wafer
100: exposure region
110,110a: chip
120: defective
200: the zone
A1, A2, D1, D2, D3, D4: direction
ED: exposure directions
SD: scanning direction
A (t0), A (t1), B (t2), A (t3), A (t4), B (t5): image
Embodiment
The detection method of wafer of the present invention is suitable for detecting exposes into the wafer that each exposure region comprises 2 * N chip.The detection method of wafer of the present invention is that to make the scanning direction of detecting wafer and the arrangements of chips of exposure region be that 2 capable directions are different.The notion of the detection method of wafer of the present invention will be described in first embodiment, how the detection method that wafer of the present invention will be described in a second embodiment combines with existing detection board, detects the defective that repeats on the wafer and will further specify the detection method of utilizing wafer of the present invention in the 3rd embodiment.What pay special attention to is, in this specification, sentence " be arranged in " OK " in a certain " direction " " expression formed " OK " is perpendicular to one another with " direction " of indication.
Fig. 1 is the schematic diagram according to the detection method of a kind of wafer of the first embodiment of the present invention.
Please refer to Fig. 1, at first, provide wafer 10, wafer 10 comprises a plurality of exposure regions 100, each exposure region 100 is included in and is arranged as 2 row on the direction A1, is arranged as 2 capable * N of N chip 110 on direction A2, and wherein N is the positive integer greater than 2, and direction A1 is vertical with direction A2.Be to be example with N=3 in the present embodiment, just each exposure region 100 is included in 6 chips 110 that are arranged as 2 row on the direction A1, are arranged as 3 row on direction A2.
Then, along scanning direction SD scanning wafer, wherein scanning direction SD is different from direction A1.In the present embodiment, be that to equal direction A2 with scanning direction SD be example, but scanning direction SD also can be other direction beyond direction A1 and the direction A2.That is to say, scanning wafer 10 scanning direction SD so long as be different from the chip 110 of exposure region 100 be arranged as 2 the row direction A1 get final product.
Yet, in general, be used at present exposing wafer exposure bench exposure directions just the arrangements of chips of exposure region be the directions of 2 row, and the scanning direction of detection board that is used for scanning wafer is identical with exposure directions usually, in other words, the exposure directions of wafer and scanning direction are the directions that arrangements of chips is 2 row, therefore, and the flow process that in a second embodiment introduction is made the detection method of wafer of the present invention be applied to existing exposure bench and detect board.
Fig. 2 A to Fig. 2 C is the schematic flow sheet according to the detection method of a kind of wafer of the second embodiment of the present invention.
Please refer to Fig. 2 A, at first, wafer 10 is provided, wafer 10 comprises a plurality of exposure regions 100, exposure region 100 be along first direction D1 (being exposure directions ED) expose form, each exposure region 100 is included in and is arranged as 2 row on the first direction D1, is arranged as 2 capable * N of N chip 110 on second direction D2, and wherein N is the positive integer greater than 2, and first direction D1 is vertical with second direction D2.Be to be example with N=3 in the present embodiment, just each exposure region 100 is included in 6 chips 110 that are arranged as 2 row on the first direction D1, are arranged as 3 row on second direction.
Please refer to Fig. 2 B, then, directed wafer 10, make the chip wafer 110 of each exposure region 100 of wafer 10 on third direction D3, be arranged as 2 row, be arranged as N on D4 in the four directions capable, wherein third direction D3 is different from first direction D1, the four directions is different from second direction D2 to D4, and third direction D3 is vertical to D4 with the four directions.In the present embodiment, be to equal second direction D2, four directions with third direction D3 to equal first direction D1 to D4 be example, in other words, for example be the angle (n be 0 or positive integer) of wafer 10 rotation (n+1/2) π that Fig. 2 A is illustrated, such as 90 degree or 270 degree.Certainly, in other embodiments, the angle beyond the wafer that also Fig. 2 A can be illustrated 10 rotation (n+1/2) π (n be 0 or positive integer), making third direction D3 and four directions is first direction D1, second direction D2 other direction in addition to D4.
Please refer to Fig. 2 C, then, along scanning direction SD scanning wafer 10, wherein scanning direction SD is different from the third direction D3 that chip 110 is arranged as 2 row.In the present embodiment, be to equal the four directions with scanning direction SD to equal first direction D1 to D4, four directions to D4 be example, in other words, scanning direction SD is first direction D1.Certainly, in other embodiments, scanning direction SD also can be third direction D3 and four directions other direction beyond D4.
In the present embodiment, the direction that the chip 110 of exposure region 100 is arranged as 2 row changes third direction D3 into by first direction D1, and the scanning direction SD of wafer 10 is different from third direction D3, therefore even exposure directions ED is identical in fact with scanning direction SD, but that the orientation of wafer 10 makes that the chip 110 of exposure region 100 is arranged as 2 capable direction D3 is different with scanning direction SD.In other words, the detection method of wafer of the present invention is applicable to exposure bench and the detection board that exposure directions and scanning direction are identical in fact, and need not to buy more extra board, so can not cause the technology cost of wafer to increase.
In the present embodiment, when detecting board, detect board can obtain each exposure region 100 under a plurality of continuous time points the image of being positioned at a plurality of chips 110 of delegation along scanning direction SD scanning wafer 10.After obtaining a plurality of images by a plurality of continuous time points, carry out the image subtraction step, just the image of a time point gained and the image of a time point gained are thereafter carried out overlap ratio, between two images, have the difference place, then have defective on the corresponding chip in difference place therewith.
Next will utilize the detection method of wafer of the present invention and the detection method of existing wafer to detect wafer, with the detection method of wafer more of the present invention and the detection method of existing wafer with the defective that repeats.
Fig. 3 A to Fig. 3 D is the schematic flow sheet according to the detection method of a kind of wafer of the third embodiment of the present invention.In the present embodiment, be to comprise that with each exposure region the wafer of 2 * 3 chips is an example, but should be appreciated that the present invention does not limit the included 2 * N core number of each exposure region, as long as N is the positive integer greater than 2.And, for the detection method of wafer of the present invention clearly is described, be that to come directed wafer be example so that the wafer dextrorotation is turn 90 degrees in the 3rd embodiment, but should be appreciated that the present invention does not limit the angle of directed wafer, as long as the arrangements of chips of the exposure region after the orientation is that 2 directions of going are different with the scanning direction.
Please refer to Fig. 3 A, at first, wafer 10a is provided, wafer 10a comprises a plurality of exposure regions 100, exposure region 100 be along first direction D1 (being exposure directions ED) expose form, each exposure region 100 is included in and is arranged as 2 row, 6 chips 110 that are arranged as 3 row on second direction D2,110a etc. on the first direction D1, and wherein first direction D1 is vertical with second direction D2.In the present embodiment, the defective 120 that repeats is arranged on the wafer 10a, this defective 120 appears on the same chip 110a of each exposure region 100.This defective 120 for example is owing to go up defectiveness in order to the mask (not illustrating) of exposure wafer 10a, therefore when mask during along first direction D1 exposure wafer 10a, this defective 120 can the same chip 110a that appear at each exposure region 100 of repetitions on.
Please refer to Fig. 3 B, then, for example is the wafer 10a that Fig. 3 A is illustrated to be revolved turn 90 degrees, and makes its directed wafer 10a that is illustrated as Fig. 3 B.That is to say that the chip 110 of each exposure region 100 of wafer 10a, 110a etc. are being arranged as 3 row, are arranged as 2 row on second direction D2 on the first direction D1.
With reference to Fig. 3 C and Fig. 3 D, then, along scanning direction SD scanning wafer 10a, wherein the SD chip 110,110a etc. that are different from each exposure region 100 in scanning direction are arranged as the second direction D2 of 2 row in the time of please scheming.In the present embodiment, be that to equal first direction D1 with scanning direction SD be example, but scanning direction SD also can be other direction beyond first direction D1 and the second direction D2.
In the present embodiment, zone 200 with scanning wafer 10a is an example, in the zone 200 of scanning direction SD scanning wafer 10a, can obtain a plurality of continuous time point t0, t1, t2, t3, t4, be positioned at a plurality of chips 110 under the t5 with delegation, the image A of 110a etc., B, image B represents to be positioned at a plurality of chips 110 of this journey, 110a etc. comprise the chip 110a with defective 120, all shadow tables are shown image A (t0), A (t1), B (t2), A (t3), A (t4), B (t5), wherein A (t0)=A (t1)=A (t3)=A (t4), B (t2)=B (t5) and A (t0) ≠ B (t2).
Then, carry out the image subtraction step, just the image of a time point gained and the image of a time point gained are thereafter carried out overlap ratio (as with the resulting image A of time point t0 (t0) the comparison time point resulting image A of t1 (t1), with the resulting image A of time point t1 (t1) the comparison time point resulting image B of t2 (t2),,, the rest may be inferred), with more variant place.Because each exposure region 100 is by same mask exposure gained, therefore the image of a time point gained is with the image of a time point gained in theory should be identical thereafter, just should there be difference between the two, so, then represent to have defective 120 on the chip 110a at corresponding this difference place when the image of a time point gained and when having the difference place between the image of a time point gained thereafter.For instance, in the present embodiment, can find not have between image A (t0) and the image A (t1) not have between difference, image A (t4) and the image B (t2) between variant between variant between difference, image A (t1) and the image B (t2), image B (t2) and the image A (t3), image A (t3) and the image A (t4) variant, can judge thus on the same chip 100a of each exposure region 100 and have defective 120, just have the defective that repeats on the wafer 10a.
From the above, the detection method of wafer of the present invention can positively detect the defective on the wafer, with the yield of lifting wafer and the element characteristic of wafer.
In sum, the detection method of wafer of the present invention is that the arrangements of chips of utilizing the scanning direction of scanning wafer to be different from exposure region is the directions of 2 row, whether detects on the wafer defectiveness.And the detection method of wafer of the present invention can detect the defective that repeats on the wafer, and the defective that all has such as each exposure region that causes wafer because of the defective on the mask is so can promote the yield of wafer.Moreover the detection method of wafer of the present invention can be applied to existing detection board, and does not need additionally to buy more equipment, so can not increase the manufacturing cost of wafer.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the scope that claim defines.
Claims (15)
1. the detection method of a wafer is characterized in that, this method comprises:
One wafer is provided, and this wafer comprises a plurality of exposure regions, and respectively this exposure region is included in and is arranged as 2 row on the first direction, is arranged as 2 capable * N of N chip on a second direction, and N is the positive integer greater than 2, and this first direction is vertical with this second direction; And
Along this wafer of one scan scanning direction, wherein this scanning direction is different from this first direction.
2. the detection method of wafer according to claim 1 is characterized in that, this scanning direction equals this second direction.
3. the detection method of wafer according to claim 1, it is characterized in that, obtain a plurality of images under a plurality of continuous time points along this scanning direction scanning wafer, the image of one time point and the image of a time point are thereafter carried out an overlapping comparison step, wherein have a difference, then with on the corresponding chip of this difference have a defective when between two images.
4. the detection method of a wafer is characterized in that, comprising:
One wafer is provided, this wafer comprises a plurality of exposure regions, these a plurality of exposure regions be along a first direction expose form, respectively this exposure region is included in and is arranged as 2 row on this first direction, is arranged as 2 capable * N of N chip on a second direction, wherein N is the positive integer greater than 2, and this first direction is vertical with this second direction; And
Along this wafer of one scan scanning direction, wherein this scanning direction is different from this first direction.
5. the detection method of wafer according to claim 4 is characterized in that, this scanning direction equals this second direction.
6. the detection method of wafer according to claim 4, it is characterized in that, obtain a plurality of images under a plurality of continuous time points along this scanning direction scanning wafer, the image of one time point and the image of a time point are thereafter carried out an overlapping comparison step, wherein have a difference, then with on the corresponding chip of this difference have a defective when between two images.
7. the detection method of a wafer is characterized in that, comprising:
One wafer is provided, this wafer comprises a plurality of exposure regions, these a plurality of exposure regions be along a first direction expose form, respectively this exposure region is included in and is arranged as 2 row on this first direction, is arranged as 2 capable * N of N chip on a second direction, wherein N is the positive integer greater than 2, and this first direction is vertical with this second direction;
Directed this wafer, make these a plurality of chips of respectively this exposure region of this wafer on a third direction, be arranged as 2 row, upwards be arranged as N in a four directions capable, wherein this third direction is different from this first direction, this four directions is to being different from this second direction, and this third direction and this four directions are to vertical; And
Along this wafer of one scan scanning direction, wherein this scanning direction is not equal to this third direction.
8. the detection method of wafer according to claim 7 is characterized in that, this scanning direction equal this four directions to.
9. the detection method of wafer according to claim 7 is characterized in that, this third direction equals this second direction and this four directions to equaling this first direction.
10. the detection method of wafer according to claim 9 is characterized in that, this scanning direction equals this first direction.
11. the detection method of wafer according to claim 9 is characterized in that, the step of directed this wafer comprises the angle with this wafer rotation (n+1/2) π, and wherein n is 0 or positive integer.
12. the detection method of wafer according to claim 11 is characterized in that, the step of directed this wafer comprises this wafer revolved and turn 90 degrees or 270 degree.
13. the detection method of wafer according to claim 7, it is characterized in that, obtain a plurality of images under a plurality of continuous time points along this scanning direction scanning wafer, the image of one time point and the image of a time point are thereafter carried out an overlapping comparison step, wherein have a difference, then with on the corresponding chip of this difference have a defective when between two images.
14. the detection method of a wafer is characterized in that, comprising:
One wafer is provided, and this wafer is included in and is arranged as the capable a plurality of chips of M on the first direction, and M is the positive integer greater than 2;
Scan this wafer along this first direction, to obtain M image under a plurality of continuous time points, and the image of a time point and the image of a time point are thereafter carried out overlapping comparison step, and to obtain (M-1) individual comparative result, (M-1) individual comparative result is all identical; And
Change the scanning direction, this scanning direction after wherein changing is not equal to this first direction.
15. the detection method of wafer according to claim 14 is characterized in that, this scanning direction after the change and this first direction differ the angle of (n+1/2) π, and wherein n is 0 or positive integer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101379917A CN101882591B (en) | 2009-05-05 | 2009-05-05 | Detection method of wafer |
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| CN2009101379917A CN101882591B (en) | 2009-05-05 | 2009-05-05 | Detection method of wafer |
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| CN101882591B CN101882591B (en) | 2011-11-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102931116A (en) * | 2012-11-12 | 2013-02-13 | 上海华力微电子有限公司 | Synchronous defect detecting method for memorizer |
| CN103137436A (en) * | 2011-11-30 | 2013-06-05 | 上海华虹Nec电子有限公司 | Method for improving partial exposure of wafer |
| CN103336239A (en) * | 2013-06-03 | 2013-10-02 | 上海宏力半导体制造有限公司 | A wafer testing method |
| CN103630547A (en) * | 2013-11-26 | 2014-03-12 | 明基材料有限公司 | Method and device for inspecting flaws of optical film with periodic structures |
| CN104157309A (en) * | 2014-08-20 | 2014-11-19 | 上海华力微电子有限公司 | Detection equipment and detection method for static memory |
| CN105372247A (en) * | 2015-10-28 | 2016-03-02 | 重庆远创光电科技有限公司 | Frame for automatic chip detection |
| CN105388159A (en) * | 2015-12-14 | 2016-03-09 | 重庆远创光电科技有限公司 | Chip image acquisition apparatus |
| CN105445273A (en) * | 2015-12-14 | 2016-03-30 | 重庆远创光电科技有限公司 | Rapid acquisition apparatus for chip image |
| CN105448782A (en) * | 2015-12-14 | 2016-03-30 | 重庆远创光电科技有限公司 | Visual detection system for chip |
| CN112687559A (en) * | 2019-10-18 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Wafer detection method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603589B2 (en) * | 2001-11-19 | 2003-08-05 | Tokyo Seimitsu (Israel) Ltd. | Circular scanning patterns |
| CN100380621C (en) * | 2005-04-08 | 2008-04-09 | 力晶半导体股份有限公司 | Wafer fault detecting method and system and storage media |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103137436A (en) * | 2011-11-30 | 2013-06-05 | 上海华虹Nec电子有限公司 | Method for improving partial exposure of wafer |
| CN103137436B (en) * | 2011-11-30 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | Improve the method for partial exposure of wafer |
| CN102931116A (en) * | 2012-11-12 | 2013-02-13 | 上海华力微电子有限公司 | Synchronous defect detecting method for memorizer |
| CN102931116B (en) * | 2012-11-12 | 2015-05-06 | 上海华力微电子有限公司 | Synchronous defect detecting method for memorizer |
| CN103336239B (en) * | 2013-06-03 | 2016-12-28 | 上海华虹宏力半导体制造有限公司 | The method of wafer sort |
| CN103336239A (en) * | 2013-06-03 | 2013-10-02 | 上海宏力半导体制造有限公司 | A wafer testing method |
| CN103630547A (en) * | 2013-11-26 | 2014-03-12 | 明基材料有限公司 | Method and device for inspecting flaws of optical film with periodic structures |
| CN103630547B (en) * | 2013-11-26 | 2016-02-03 | 明基材料有限公司 | There is flaw detection method and the pick-up unit thereof of the optical thin film of periodic structure |
| CN104157309A (en) * | 2014-08-20 | 2014-11-19 | 上海华力微电子有限公司 | Detection equipment and detection method for static memory |
| CN104157309B (en) * | 2014-08-20 | 2017-12-15 | 上海华力微电子有限公司 | The detection device and detection method of static memory |
| CN105372247A (en) * | 2015-10-28 | 2016-03-02 | 重庆远创光电科技有限公司 | Frame for automatic chip detection |
| CN105388159A (en) * | 2015-12-14 | 2016-03-09 | 重庆远创光电科技有限公司 | Chip image acquisition apparatus |
| CN105445273A (en) * | 2015-12-14 | 2016-03-30 | 重庆远创光电科技有限公司 | Rapid acquisition apparatus for chip image |
| CN105448782A (en) * | 2015-12-14 | 2016-03-30 | 重庆远创光电科技有限公司 | Visual detection system for chip |
| CN105448782B (en) * | 2015-12-14 | 2018-11-20 | 重庆远创光电科技有限公司 | A kind of chip vision detection system |
| CN112687559A (en) * | 2019-10-18 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Wafer detection method |
| CN112687559B (en) * | 2019-10-18 | 2022-07-26 | 夏泰鑫半导体(青岛)有限公司 | Wafer detection method |
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| CN101882591B (en) | 2011-11-16 |
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