CN101881928A - Method for preparing film-free positive image PS plate - Google Patents
Method for preparing film-free positive image PS plate Download PDFInfo
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- CN101881928A CN101881928A CN 201010204645 CN201010204645A CN101881928A CN 101881928 A CN101881928 A CN 101881928A CN 201010204645 CN201010204645 CN 201010204645 CN 201010204645 A CN201010204645 A CN 201010204645A CN 101881928 A CN101881928 A CN 101881928A
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Abstract
The invention discloses a method for preparing a film-free positive image PS plate. The method comprises the following steps of: selecting a substrate, allowing the substrate to pass through NaOH solution to carry out alkaline wash, and cleaning the substrate; carrying out water neutralization on the cleaned substrate with solution of sulfuric acid, and then cleaning the substrate again; roughening the surface of the cleaned substrate; rinsing the roughened substrate with water to remove electrolytic ash on the surface of the substrate; carrying out chemical etching on the substrate through alkali solution at a certain temperature; reducing the temperature after the chemical etching; cleaning the substrate with acid solution for the first time, and finally cleaning the substrate with water for the second time; carrying out anodic oxidation treatment on the cleaned substrate; soaking and sealing the substrate subjected to oxidation treatment in the acid solution, and then drying the substrate; coating the dried substrate to form a photosensitive layer; drying the substrate with the formed photosensitive layer for 4 times to form a prefabricated photosensitive plate; exposing and imaging the prefabricated photosensitive plate; and coating a developing agent on the imaged prefabricated photosensitive plate to obtain the film-free positive image PS plate.
Description
Technical field
The present invention relates to a kind of preparation method of film-free positive image PS plate.
Background technology
Positive-type PS version is meant and adopts positive standardized form of Chinese charcters master, the ultraviolet light of exposure to see through that low-density and blank position arrive PS version photographic layer on the master, is absorbed by emulsion, becomes word one-tenth figure to sensitization.Its principle is that positive PS printing plate is under action of ultraviolet light, take place to decompose and the structural rearrangement reaction, insoluble to become diluted alkaline solvable by diluted alkaline to make the sensitization position, while is along with the disappearance of photosensitive group, the color at sensitization position is become the color blue of colorant in the photographic layer by green, in the making of positive PS printing plate, need and the supporting use of film sheet at present, and film sheet cost is higher, is not suitable for generally producing.
Summary of the invention
The invention provides a kind of preparation method of film-free positive image PS plate, it does not only need film sheet, and has multi-level Grains, and oxidation density is good, and press resistance rate is higher.
The present invention has adopted following technical scheme: a kind of preparation method of film-free positive image PS plate, and it may further comprise the steps: step 1, at first select substrate, allow substrate carry out alkali cleaning by NaOH solution at a certain temperature, and then clean with clear water; Step 2 is carried out the water neutralization to the substrate after cleaning with sulfuric acid solution at normal temperatures, and then cleans with clear water; Step 3 is carried out roughened to the substrate surface after cleaning; Step 4 is washed the substrate water behind the roughening, removes the electrolysis ash of substrate surface, carry out chemical etching by aqueous slkali at a certain temperature, lower the temperature after the chemical etching, carry out the first time with acid solution again and clean, water carries out the cleaning second time more at last; Step 5 is carried out anodized to the substrate after cleaning; Step 6 will be flooded sealing of hole through the substrate after the oxidation processes and be handled in acid solution, dry then; Step 7 is coated with the substrate after the oven dry, forms photographic layer; Step 8 to forming the substrate of photographic layer, is carried out the oven dry of 4 roads and is handled, and forms presentized printing plate; Step 9 is carried out exposure image with presentized printing plate, scribbles developer at last on the presentized printing plate after the imaging and obtains film-free positive image PS plate.
Alkaline cleaning procedure in the described step 1 is: with concentration is 6-15%, and temperature is that 45 ℃ NaOH solution washes the substrate pros and cons, and the time is about 30 seconds; Water N-process in the described step 2 is: at normal temperatures, be that the sulfuric acid solution of 18-20% washes the substrate pros and cons with concentration, the time is about 30 seconds;
Roughened process in the described step 3 is: with substrate put into hydrochloric acid, the phosphoric acid mixed solution carries out the three-phase electrolysis, form the multilayer Grains, concentration of hydrochloric acid is 1.2%-1.5% in the mixed solution, phosphoric acid concentration is 0.6%, the mixed solution temperature is 26-32 ℃, alternating current is 800A-900A, and the time is 1-120 second; The temperature of the chemical etching in the described step 4 is 70 ℃, and aqueous slkali comprises NaOH and the 6wt% aluminium ion of 26wt%, and temperature is reduced to 30 ℃ after the chemical etching, and acid solution contains the sulfuric acid of 1wt% and the aluminium ion of 0.5wt%; The process of the anodized in the described step 5 is: carry out electrolytic reaction at the surface of substrate formation anode oxide film thereby substrate is put into electrolyte by direct current; Electrolyte is sulfuric acid, phosphoric acid, chromic acid, sulfaminic acid or their potpourri, and electrolysis temperature is 10-40 ℃, and current density is 0.5-60A/dm2, and voltage is 1-50v, and the electrolytic reaction time is 10-120 second; Hole-sealing technology is in the described step 6: acid solution is sodium dihydrogen phosphate and sodium fluoride mixed solution, ratio is a sodium dihydrogen phosphate: sodium fluoride: water=10: 1: 1000, conductivity is 2800-3000 μ m, pH value is 4-5, be heated to 50 ℃-60 ℃, substrate is flooded 20-30 second in acid solution, clean with 40-50 ℃ hot water then; Coating fluid in the described step 7 is common PS version photoresists; The temperature of the four roads oven dry in the described step 8 is 105 ℃, 80 ℃, 80 ℃, 80 ℃, dries by far-infrared heating tube, and the time is 90 seconds; In the described step 9 presentized printing plate is carried out exposure-processed with precious sharp special machine, develop with common PS plate developing liquid.
The present invention has following beneficial effect: the invention provides a kind of preparation method of film-free positive image PS plate, it does not only need film sheet, and has multi-level Grains, and oxidation is close careful and density good, and press resistance rate is higher.
Embodiment
The invention provides a kind of preparation method of film-free positive image PS plate, it may further comprise the steps: step 1, at first select substrate, and allow substrate carry out alkali cleaning by NaOH solution at a certain temperature, and then clean with clear water; Alkaline cleaning procedure is: with concentration is 6-15%, and temperature is that 45 ℃ NaOH solution washes the substrate pros and cons, and the time is about 30 seconds.Step 2 is carried out the water neutralization to the substrate after cleaning with sulfuric acid solution at normal temperatures, and then cleans with clear water; The water N-process is: at normal temperatures, be that the sulfuric acid solution of 18-20% washes the substrate pros and cons with concentration, the time is about 30 seconds.Step 3 is carried out roughened to the substrate surface after cleaning; The roughened process is: with substrate put into hydrochloric acid, the phosphoric acid mixed solution carries out the three-phase electrolysis, forms the multilayer Grains, concentration of hydrochloric acid is 1.2%-1.5% in the mixed solution, phosphoric acid concentration is 0.6%, the mixed solution temperature is 26-32 ℃, and alternating current is 800A-900A, and the time is 1-120 second.Step 4 is washed the substrate water behind the roughening, removes the electrolysis ash of substrate surface, carry out chemical etching by aqueous slkali at a certain temperature, lower the temperature after the chemical etching, carry out the first time with acid solution again and clean, water carries out the cleaning second time more at last; The temperature of chemical etching is 70 ℃, and aqueous slkali comprises NaOH and the 6wt% aluminium ion of 26wt%, and temperature is reduced to 30 ℃ after the chemical etching, and acid solution contains the sulfuric acid of 1wt% and the aluminium ion of 0.5wt%.Step 5 is carried out anodized to the substrate after cleaning; The process of anodized is: carry out electrolytic reaction at the surface of substrate formation anode oxide film thereby substrate is put into electrolyte by direct current; Electrolyte is sulfuric acid, phosphoric acid, chromic acid, sulfaminic acid or their potpourri, and electrolysis temperature is 10-40 ℃, and current density is 0.5-60A/dm2, and voltage is 1-50v, and the electrolytic reaction time is 10-120 second.Step 6 will be flooded sealing of hole through the substrate after the oxidation processes and be handled in acid solution, dry then; Hole-sealing technology is: acid solution is sodium dihydrogen phosphate and sodium fluoride mixed solution, ratio is a sodium dihydrogen phosphate: sodium fluoride: water=10: 1: 1000, conductivity is 2800-3000 μ m, pH value is 4-5, be heated to 50 ℃-60 ℃, substrate is flooded 20-30 second in acid solution, clean with 40-50 ℃ hot water then.Step 7 is coated with the substrate after the oven dry, forms photographic layer; Coating fluid is common PS version photoresists.Step 8 to forming the substrate of photographic layer, is carried out the oven dry of 4 roads and is handled, and forms presentized printing plate; The temperature of four roads oven dry is 105 ℃, 80 ℃, 80 ℃, 80 ℃, dries by far-infrared heating tube, and the time is 90 seconds.Step 9 is carried out exposure image by the sharp special machine of treasured to presentized printing plate, scribbles developer at last on the presentized printing plate after the imaging and obtains film-free positive image PS plate, and developer is common PS plate developing liquid.
Claims (10)
1. the preparation method of a film-free positive image PS plate is characterized in that it may further comprise the steps:
Step 1 is at first selected substrate, allows substrate carry out alkali cleaning by NaOH solution at a certain temperature, and then cleans with clear water;
Step 2 is carried out the water neutralization to the substrate after cleaning with sulfuric acid solution at normal temperatures, and then cleans with clear water;
Step 3 is carried out roughened to the substrate surface after cleaning;
Step 4 is washed the substrate water behind the roughening, removes the electrolysis ash of substrate surface, carry out chemical etching by aqueous slkali at a certain temperature, lower the temperature after the chemical etching, carry out the first time with acid solution again and clean, water carries out the cleaning second time more at last;
Step 5 is carried out anodized to the substrate after cleaning;
Step 6 will be flooded sealing of hole through the substrate after the oxidation processes and be handled in acid solution, dry then;
Step 7 is coated with the substrate after the oven dry, forms photographic layer;
Step 8 to forming the substrate of photographic layer, is carried out the oven dry of 4 roads and is handled, and forms presentized printing plate;
Step 9 is carried out exposure image with presentized printing plate, scribbles developer at last on the presentized printing plate after the imaging and obtains film-free positive image PS plate.
2. the preparation method of a kind of film-free positive image PS plate according to claim 1, it is characterized in that the alkaline cleaning procedure in the described step 1 is: with concentration is 6-15%, and temperature is that 45 ℃ NaOH solution washes the substrate pros and cons, and the time is about 30 seconds.
3. the preparation method of a kind of film-free positive image PS plate according to claim 1 is characterized in that the water N-process in the described step 2 is: at normal temperatures, be that the sulfuric acid solution of 18-20% washes the substrate pros and cons with concentration, the time is about 30 seconds.
4. the preparation method of a kind of film-free positive image PS plate according to claim 1, it is characterized in that the roughened process in the described step 3 is: with substrate put into hydrochloric acid, the phosphoric acid mixed solution carries out the three-phase electrolysis, form the multilayer Grains, concentration of hydrochloric acid is 1.2%-1.5% in the mixed solution, phosphoric acid concentration is 0.6%, the mixed solution temperature is 26-32 ℃, and alternating current is 800A-900A, and the time is 1-120 second.
5. the preparation method of a kind of film-free positive image PS plate according to claim 1, the temperature that it is characterized in that the chemical etching in the described step 4 is 70 ℃, aqueous slkali comprises NaOH and the 6wt% aluminium ion of 26wt%, temperature is reduced to 30 ℃ after the chemical etching, and acid solution contains the sulfuric acid of 1wt% and the aluminium ion of 0.5wt%.
6. the preparation method of film-free positive image PS plate according to claim 1 is characterized in that the process of the anodized in the described step 5 is: carry out electrolytic reaction at the surface of substrate formation anode oxide film thereby substrate is put into electrolyte by direct current; Electrolyte is sulfuric acid, phosphoric acid, chromic acid, sulfaminic acid or their potpourri, and electrolysis temperature is 10-40 ℃, and current density is 0.5-60A/dm2, and voltage is 1-50v, and the electrolytic reaction time is 10-120 second.
7. the preparation method of film-free positive image PS plate according to claim 1, it is characterized in that hole-sealing technology is in the described step 6: acid solution is sodium dihydrogen phosphate and sodium fluoride mixed solution, ratio is a sodium dihydrogen phosphate: sodium fluoride: water=10: 1: 1000, conductivity is 2800-3000 μ m, pH value is 4-5, be heated to 50 ℃-60 ℃, substrate is flooded 20-30 second in acid solution, clean with 40-50 ℃ hot water then.
8. the preparation method of film-free positive image PS plate according to claim 1 is characterized in that the coating fluid in the described step 7 is common PS version photoresists.
9. the preparation method of film-free positive image PS plate according to claim 1 is characterized in that the temperature of the four roads oven dry in the described step 8 is 105 ℃, 80 ℃, 80 ℃, 80 ℃, dries by far-infrared heating tube, and the time is 90 seconds.
10. the preparation method of film-free positive image PS plate according to claim 1 is characterized in that in the described step 9 presentized printing plate being carried out exposure-processed with precious sharp special machine, develops with common PS plate developing liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010204645 CN101881928A (en) | 2010-06-22 | 2010-06-22 | Method for preparing film-free positive image PS plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010204645 CN101881928A (en) | 2010-06-22 | 2010-06-22 | Method for preparing film-free positive image PS plate |
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| CN101881928A true CN101881928A (en) | 2010-11-10 |
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| CN 201010204645 Pending CN101881928A (en) | 2010-06-22 | 2010-06-22 | Method for preparing film-free positive image PS plate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334492A (en) * | 2000-07-07 | 2002-02-06 | 富士胶片株式会社 | Method for making lithographic plate |
| CN1378918A (en) * | 2001-04-03 | 2002-11-13 | 富士胶片株式会社 | Supporting body for lithographic plate and lithographic original plate |
| CN101738856A (en) * | 2008-11-24 | 2010-06-16 | 广西玉林金龙Ps版印刷材料有限公司 | Sensible heat composition for positive thermosensitive CTP plate without preheating and plate-making method by using same |
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2010
- 2010-06-22 CN CN 201010204645 patent/CN101881928A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334492A (en) * | 2000-07-07 | 2002-02-06 | 富士胶片株式会社 | Method for making lithographic plate |
| CN1378918A (en) * | 2001-04-03 | 2002-11-13 | 富士胶片株式会社 | Supporting body for lithographic plate and lithographic original plate |
| CN101738856A (en) * | 2008-11-24 | 2010-06-16 | 广西玉林金龙Ps版印刷材料有限公司 | Sensible heat composition for positive thermosensitive CTP plate without preheating and plate-making method by using same |
Non-Patent Citations (1)
| Title |
|---|
| 《广东印刷》 20070531 深圳赛图 "CTcP 普通PS版CTP！" p76-77 , 2 * |
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Open date: 20101110 |