CN101880913A

CN101880913A - Method for preparing lithium niobate thin-film materials

Info

Publication number: CN101880913A
Application number: CN2009100150370A
Authority: CN
Inventors: 胡文
Original assignee: Individual
Current assignee: Jinan Jingzheng Electronics Co Ltd
Priority date: 2009-05-06
Filing date: 2009-05-06
Publication date: 2010-11-10

Abstract

The invention relates to a process for preparing lithium niobate thin-film materials. Before lithium niobate is directly bonded with silicon dioxide, a layer of amidogen covers on the surface of the lithium niobate or the surface of the silicon dioxide or two surfaces of the lithium niobate and the silicon dioxide. By adopting the process, the lithium niobate thin-film materials with a large area and a regular shape can be obtained.

Description

A kind of method of making lithium niobate thin-film materials

Technical field

The present invention relates to a kind of technological process of making lithium niobate thin-film materials.

Background technology

Lithium niobium trioxide (LiNbO3, LN) thin-film material is in integrated optics, and photoelectron element has very application prospects in the fields such as nonlinear optics.Document 1 (No.20, p 4603 for Applied Physics Letters, Vol.85) has been reported a kind of method of making the Lithium niobium trioxide film, step comprises ion implantation, the deposition of silicon-dioxide and polishing, and sample cleans, Direct Bonding (direct bonding), thermal treatment separates, technologies such as polishing.But the film size of making is little, and the edge is irregular, can not satisfy big area, and the industry of mass production needs.The basic reason of problem is that after sample cleaned, when carrying out Direct Bonding, the bonding force of Lithium niobium trioxide surface and silica sphere was strong inadequately, and when thermal treatment separated, the Lithium niobium trioxide film can not be pasted at silica sphere fully.The method of the making Lithium niobium trioxide film of document 2 (Nature Photonics, Vol.1.p 407) report utilizes the BCB material to replace silicon-dioxide, but the BCB material is a kind of organism, stable not as silicon-dioxide, at high temperature can decompose, therefore use wider not as silicon-dioxide.

Summary of the invention

Little in order to overcome the Lithium niobium trioxide film size of producing in the document 1, the irregular problem in edge, the invention provides a kind of new technology, the Lithium niobium trioxide surface and the bonding force of silica sphere are strengthened, thereby can produce lithium niobate thin-film materials large-area, regular shape, adopt technological process shown in the present can satisfy the requirement of industrial mass production Lithium niobium trioxide film fully.

The present invention finds, on the lithium niobate crystal chip surface or silica sphere be coated with under the situation of amino (NH2), when Lithium niobium trioxide surface and silica sphere Direct Bonding, its surperficial linkage force can strengthen greatly.Lithium niobium trioxide surface attachment amino can be write and do: LN-NH2, silica sphere adheres to amino and can write and be Si-NH2, when two surface bonds also heat at a certain temperature, following process: LN-NH2+Si-NH2 → LN-N-N-Si+H2 can take place, and two surfaces can (N-N-) be bonded together by the nitrogen key.According to this discovery, the present invention solves the scheme that technical problem adopted of making the Lithium niobium trioxide film: after having cleaned wafer, cover one deck amino separately in lithium niobate crystal surface and silica sphere, perhaps cover one deck amino, then lithium niobate crystal surface and silica sphere Direct Bonding are in the same place on one of two surfaces.This moment, the bonding force of Lithium niobium trioxide surface and silica sphere strengthened greatly, and when thermal treatment separated, the Lithium niobium trioxide film will be pasted at silica sphere fully.

The invention has the beneficial effects as follows, adopt the present invention can produce large-area (more than 3 inches or 3 inches), the lithium niobate thin-film materials of regular shape.

Description of drawings

Fig. 1 to Fig. 7 is the manufacture craft synoptic diagram of Lithium niobium trioxide film in the Figure of description

Fig. 1 carries out ion implantation on lithium niobate crystal chip 1

Fig. 2 is carrying out silica deposit and polishing on a slice lithium niobate crystal chip 5 in addition

The cleaning of Fig. 3 wafer 1 and wafer 5

The surface coverage amino of Fig. 4 wafer 1 and wafer 5

Fig. 5 wafer 1 and wafer 5 Direct Bonding

Fig. 6 thermal treatment separates

The surface finish of Fig. 7 Lithium niobium trioxide film

Wherein:

1 refers to lithium niobate crystal chip

2 inject the ion dwell regions, inject ion and rest in the lithium niobate crystal chip 1

3 are meant the part between lithium niobate crystal chip surface and the injection ion dwell regions 2, are the Lithium niobium trioxide films after thermal treatment separates

4 refer to ion implantation process

5 refer to lithium niobate crystal chip

6 refer to sedimentary silicon dioxide layer

Embodiment

Embodiment 1

Lithium niobate crystal chip A is carried out ion implantation, will polish after another sheet lithium niobate crystal chip B surface deposition layer of silicon dioxide.A and B are carried out careful cleaning.With A surface or B surface, perhaps A surface and B surface cover one deck ammoniacal liquor simultaneously then, and the concentration of ammoniacal liquor dries up A and B or dry then between 0.1% to 100%.Then A is in the same place with the B Direct Bonding, heating at a certain temperature treats that the Lithium niobium trioxide divided thin film takes out wafer from the back, then with the lithium niobate thin-film materials surface finish.Can obtain large-area this moment, the lithium niobate thin-film materials of regular shape.

Embodiment 2

Lithium niobate crystal chip A is carried out ion implantation, will polish after another sheet lithium niobate crystal chip B surface deposition layer of silicon dioxide.A and B are carried out careful cleaning.With A surface or B surface, perhaps A surface and B surface are immersed in the middle of the ammonia environment simultaneously then, and the concentration of ammonia dries up A and B or dry then between 0.1% to 100%.Then A is in the same place with the B Direct Bonding, heating at a certain temperature treats that the Lithium niobium trioxide divided thin film takes out wafer from the back, then with the lithium niobate thin-film materials surface finish.Can obtain large-area this moment, the lithium niobate thin-film materials of regular shape.

Claims

1. a technological process is used for making the Lithium niobium trioxide film, it is characterized in that, in face of Direct Bonding Lithium niobium trioxide and silicon dioxide meter, makes surface coverage one deck amino of Lithium niobium trioxide or silicon-dioxide.

2. technological process according to claim 1, it is characterized in that: in face of Direct Bonding Lithium niobium trioxide and silicon dioxide meter, Lithium niobium trioxide surface or silica sphere are covered one deck ammoniacal liquor, or cover one deck ammoniacal liquor simultaneously on these two surfaces, the concentration of ammoniacal liquor dries the surface or dry up then between 0.1% to 100%.

3. technological process according to claim 1, it is characterized in that: in face of Direct Bonding Lithium niobium trioxide and silicon dioxide meter, Lithium niobium trioxide surface or silica sphere are immersed in the ammonia, or immerse these two surfaces in the ammonia simultaneously, the concentration of ammonia dries the surface or dry up then between 0.1% to 100%.