CN101866738A - Perpendicular magnetic anisotropic multi-layered film - Google Patents
Perpendicular magnetic anisotropic multi-layered film Download PDFInfo
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- CN101866738A CN101866738A CN200910082039A CN200910082039A CN101866738A CN 101866738 A CN101866738 A CN 101866738A CN 200910082039 A CN200910082039 A CN 200910082039A CN 200910082039 A CN200910082039 A CN 200910082039A CN 101866738 A CN101866738 A CN 101866738A
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Abstract
The invention relates to a perpendicular magnetic anisotropic multi-layered film, which comprises a substrate, a bottom layer, a lower magnetic layer, a middle layer, an upper magnetic layer and a covering layer, wherein at least one of the lower magnetic layer and the upper magnetic layer is a composite magnetic layer which consists of a main layer and a transitional layer, the main layer is made of perpendicular magnetic anisotropic material, and the transitional layer is made of magnetic metal material with spin polarization higher than the spin polarization of the perpendicular magnetic anisotropic material, and is positioned between the main layer and the middle layer. When the middle layer is a barrier layer, the composite magnetic layer also can be made of metal material with a spin diffusion length larger than 3nm. Under the premise of guaranteeing excellent perpendicular magnetic anisotropy, the invention can enhance the magnetoresistance property, reduce mutual magnetostatic reaction and decrease the reverse field or reverse current of a corresponding device. The invention is applicable to giant magnetoresistance devices or tunneling magnetoresistance devices, such as magnetic sensors, magnetic random-access memorys and magnetic logic devices.
Description
Technical field
The invention belongs to spintronics material field, specifically, the present invention relates to be used for the multilayer film of a kind of perpendicular magnetic anisotropic of magneto-resistance effect device.
Background technology
Device based on magneto-resistance effect especially giant magnetoresistance effect and Tunneling Magnetoresistance are made can obtain very big magneto-resistor, and production technology can and conventional semiconductor technology compatibility, therefore very big application prospect arranged industrial.Spin valve structure and magnetic tunnel junction structure are two kinds of magneto-resistance device structures commonly used, and the magnetic pole of described spin valve structure and magnetic tunnel junction structure all can use the material with perpendicular magnetic anisotropic (as Co/Pt multilayer film, L
10-FePt alloy) makes.Fig. 1 shows that a kind of Co/Pt of employing multilayer film is as the vertical magnetic anisotropic multi-layer film that is used for tunnel junction structure of magnetic pole in the prior art, and its core texture is: SUB/UL/P-FM/I/P-FM/CAP; Wherein, SUB represents substrate, and UL represents bottom, and P-FM represents to have the magnetosphere of perpendicular magnetic anisotropic, and I represents to be used for the barrier layer of tunneling magnetic resistance device architecture, and CAP represents cover layer; The concrete material of described each layer of vertical magnetic anisotropic multi-layer film that is used for tunnel junction structure is as follows: Pt (5nm)/[Pt (2.0nm)/Co (0.7nm)]
5/ AlOx (1.0nm)/[Co (0.5nm)/Pt (2.0nm)]
10/ Pt (10nm).
Compare with the magnetic material that adopts intra-face anisotropy, use the multilayer film that is used for giant magnetoresistance device and tunneling magnetic resistance device of perpendicular magnetic anisotropic material, have following three major advantages: at first, magnetic moment with perpendicular magnetic anisotropic material is perpendicular to face, therefore it can be processed to littler size and not produce the superparamagnetism disturbance, help miniaturization of devices, can increase substantially the integration density of device; Secondly, when film is used for the magnetic storage of the spin electric device of current drives such as the counter-rotating of current drives magnetic moment through little processing, adopt material to have littler critical current and have better thermal stability as magnetospheric device with perpendicular magnetic anisotropic; Once more, the multilayer film that uses perpendicular magnetic anisotropic can obtain special outfield response (as the linear response to the outfield) as spin valve structure or magnetic tunnel junction structure, is particularly suitable for the application of aspects such as magnetic sensor.
Yet, adopt the magneto-resistor of the Spin Valve of magnetic material of perpendicular magnetic anisotropic or magnetic tunnel junction structure less usually at present, be unfavorable for practical application.
At present, in the giant magnetoresistance device, be that the spin valve structure of magnetic pole can obtain room temperature up to 20% (Li with CoFe etc., M., Liao, S., et al.2002, DigestInt.Symp.Magn.Mat.Proc.Device s) giant magnetoresistance effect, and adopt the material of perpendicular magnetic anisotropic to have only about 2% as the present laboratory of the Spin Valve of magnetic pole results reported; In the tunneling magnetic resistance device, with CoFeB the AlO of magnetic pole at present
xCan obtain room temperature 80% (H.X.Wei, Q.H.Qin, M.Ma in the MTJ, R.Sharif, X.F.Han, 2007, J.Appl.Phys.101, tunneling magnetic resistance 09B501) then can reach 600% (S.Ikeda, J.Hayakawa in the MTJ that with MgO is potential barrier, H.Ohno et al.2006, Appl.Phys.Lett.93,082508) more than, and at present this material with perpendicular magnetic anisotropic as the tunnel junction of magnetic pole in AlO
xFor tunneling magnetic resistance in the MTJ of potential barrier has only about 20%, and in the MTJ that with MgO is potential barrier, also have only about 60%.
At present, there have been some relevant patents that the magnetic material of perpendicular magnetic anisotropic is applied to Spin Valve or magnetic tunnel junction structure.
October in 2008 disclosed Fudan University on the 1st Chinese patent application (publication number is CN101320616A, theme is a kind of Spin Valve with perpendicular magnetic anisotropic), disclosing the Co/Ni multilayer film that a kind of employing has perpendicular magnetic anisotropic is magnetospheric spin valve structure.Wherein, selected the more weak Co/Ni multilayer film of perpendicular magnetic anisotropic for use, thereby obtained bigger magneto-resistor for fear of the interface problem of magnetosphere with perpendicular magnetic anisotropic and nonmagnetic layer.Yet the perpendicular magnetic anisotropic material that has of using more widely other is not applied.
December in 2008 disclosed University of Science ﹠ Technology, Beijing on the 10th Chinese patent application (publication number is CN101276879A, theme is a kind of double freedom layer vertical ferromagnetism tunnel junction structure), disclose a kind of two magnetospheres and all contained tunnel junction structure with perpendicular magnetic anisotropic material.As previously mentioned, this directly will have the perpendicular magnetic anisotropic material and be used for magnetic resistance structure and be difficult to obtain high magneto-resistor, main cause is that the interface of the barrier layer of the middle non-magnetic metal layer of this material with perpendicular magnetic anisotropic and spin valve structure or magnetic tunnel junction structure is difficult to optimize, and spin polarizability spin scattering little or that the coupling of near interface spin(-)orbit causes in interface strengthens or the like.
In addition, have the perpendicular magnetic anisotropic material for employing and be wherein one deck or all two-layer magnetospheric tunnel junction structure, when the thickness of barrier layer in the membrane structure relatively approaches, magnetostatic interactional enhancing can make and have the direction that the magnetospheric magnetic moment of perpendicular magnetic anisotropic is difficult to form desirable vertical face between two magnetospheres, and this also can influence the size of tunneling magnetic resistance and it is to the accuracy of the response in outfield.
Summary of the invention
Main purpose of the present invention is to overcome the deficiencies in the prior art, provide a kind of under the prerequisite that guarantees good perpendicular magnetic anisotropic performance, can improve the magneto-resistor performance, reduce magnetostatic interaction each other and reduce the adverse field of corresponding device or the multilayer film of the perpendicular magnetic anisotropic of reverse current.
For achieving the above object, the multilayer film of a kind of perpendicular magnetic anisotropic provided by the invention, comprise successively from the bottom to top: substrate, bottom, magnetic layer, intermediate layer, last magnetosphere and cover layer, at least one is the magnetosphere of perpendicular magnetic anisotropic in described magnetic layer and the last magnetosphere, and described intermediate layer is non-magnetic metal layer or barrier layer; The magnetosphere of described perpendicular magnetic anisotropic is the composite magnetic layer, comprise body layer and transition zone, described body layer adopts the perpendicular magnetic anisotropic material, described transition zone adopts spin polarizability to be higher than the magnetic metal material of described perpendicular magnetic anisotropic material, and described transition zone is between described body layer and intermediate layer.Wherein, when the intermediate layer was non-magnetic metal layer, the multilayer film of described perpendicular magnetic anisotropic was the membrane structure that is used for the giant magnetoresistance device, and the multilayer film of described perpendicular magnetic anisotropic was the membrane structure that is used for tunnel junction element when the intermediate layer was barrier layer.
In the technique scheme, when described intermediate layer is barrier layer, described composite magnetic layer also comprises second transition zone, and described second transition zone adopts spin diffusion length to make greater than the metal material of 3nm, and described second transition zone is between described body layer and barrier layer.
In the technique scheme, described composite magnetic layer also comprises soft ferromagnetic layer, and when described composite magnetic layer was the magnetic layer, described soft ferromagnetic layer was between described body layer and bottom; When described composite magnetic layer is that described soft ferromagnetic layer is between described body layer and cover layer when going up magnetosphere.
In the technique scheme, described body layer adopts ferromagnetic metal or the alloy firm with perpendicular magnetic anisotropic, and thickness is 3～100nm.
In the technique scheme, described body layer adopts the periodicity multilayer film with perpendicular magnetic anisotropic, the alloy single thin film with perpendicular magnetic anisotropic.For periodicity multilayer film with perpendicular magnetic anisotropic, preferred Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film, CoCr/Pt multilayer film; For alloy with perpendicular magnetic anisotropic, FePt alloy, PtCoNi alloy or the Co-Cr of preferred CoPt alloy, L10 phase are alloy, comprise Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt, the described all right preferred TbFeCo of alloy with perpendicular magnetic anisotropic, GdFeCo, Gd-Co, GdFe, TbFe, TbCo/Cr, CoGdZr, CoGdSm, GdTbFeCo or GdTbFe etc.
In the technique scheme, described upward magnetosphere and magnetic layer wherein one deck can be the magnetospheres with intra-face anisotropy, adopt spin polarizability than higher ferromagnetic metal or the alloy firm of easy axle in face, the preferred Co of manufacturing materials, Fe, Ni, Co-Fe, Co-Fe-B or Ni-Fe alloy (as: Ni
81Fe
19), thickness is 1.0～10nm.
In the technique scheme, described non-magnetic metal layer generally adopts Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy to make, and thickness is 1.0～10nm; Described barrier layer generally adopts Al
2O
3, MgO, AlN, Ta
2O
5, ZnO or TiO
2Etc. material, thickness generally is being 0.5～5nm.
In the technique scheme, the preferred Co of the transition zone of described composite magnetic layer, Fe, Ni, Co-Fe, Co-Fe-B, Co-Cr-Fe or Ni-Fe alloy (as: Ni
81Fe
19) make, thickness is 0.1～2nm.Main purpose is to guarantee that the composite magnetic layer has under the prerequisite of perpendicular magnetic anisotropic, improve the magnetic property of interface and membrane structure effectively, raising has the magnetosphere of perpendicular magnetic anisotropic and the spin polarizability of metal level or barrier layer near interface, thereby increases substantially the magnetoelectricity resistance of device.
In the technique scheme, the preferred Cu of second transition zone of described composite magnetic layer, Ru, Mg or Al make, and thickness is 0.1～1.0nm.Main purpose is to guarantee effectively to increase by two magnetospheric distances in the tunnel junction structure under the condition that magneto-resistor can not decline to a great extent, and reducing magnetostatic interaction each other, and guarantees the accuracy of device to the outfield response.
In the technique scheme, (soft magnetic material is defined as the magnetic material with low-coercivity and high magnetic permeability to the soft ferromagnetic layer of described composite magnetic layer.Soft magnetic material is easy to magnetization, also is easy to demagnetization), have very little coercive force, it and the compound back of other magnetic materials can reduce the adverse field or the reverse current of corresponding device as the composite magnetic layer.The preferred Ni-Fe alloy of described soft ferromagnetic layer (as: Ni
81Fe
19), or the making of Fe-Al alloy, thickness is 0.5nm～2.0nm.
In the technique scheme, described bottom can be the film and the compact metal level of substrate (comprising the metallic film that individual layer and multilayer are different) that conductivity is relatively good and deposit, the preferred Ta of its material, Ru, Cr, Pt, and Pd, Cu, thickness are 3～50nm.Also can be described metal level and inverse ferric magnetosphere composite bed.Wherein inverse ferric magnetosphere is for having the preferred Ir-Mn of anti-ferromagnetic alloy material, and Fe-Mn, or Pt-Mn, thickness are 2～20nm.
In the technique scheme; described cover layer is to be difficult for metal level (comprising the metallic film that individual layer and multilayer are different) oxidized and that conductivity is reasonable; the preferred Ta of its material, Cu, Ru, Pt, Ag, Au etc., thickness is 2～40nm, is used to protect the not oxidized and corrosion of core texture.
In the technique scheme, described substrate is Si substrate or Si-SiO
2Substrate, thickness are 0.3～1mm.
For achieving the above object, the multilayer film of another kind of perpendicular magnetic anisotropic provided by the invention, comprise successively from the bottom to top: substrate, bottom, the magnetic layer, barrier layer, last magnetosphere and cover layer, at least one is the magnetosphere of perpendicular magnetic anisotropic in described magnetic layer and the last magnetosphere, the magnetosphere of described perpendicular magnetic anisotropic is the composite magnetic layer, comprise body layer and transition zone, described body layer adopts the perpendicular magnetic anisotropic material, described transition zone adopts spin diffusion length to make greater than the metal material of 3nm, and described transition zone is between described body layer and barrier layer.
The multi-layer film structure of perpendicular magnetic anisotropic provided by the invention, the little processing photoetching process through the later stage can be processed into the difform knot of size from tens nanometer to tens of microns.Its shape comprise hollow or solid draw ratio from 1: 1 to 1: 3 ellipse, length-width ratio rectangle and some regular polygons (N=4 is counted on the limit, 6,8,10,12,16,20,24) from 1: 1 to 1: 3.
The multi-layer film structure of the perpendicular magnetic anisotropic that provides of the present invention can be used for giant magnetoresistance device or tunneling magnetic resistance device.Such as magnetic sensor, magnetic random memory and magnetic logical device etc.
The present invention has following technique effect:
The present invention has overcome the interface factor that is unfavorable in the prior art that magneto-resistor improves, comprise magnetospheric composite magnetic layer by employing and improve this membrane structure that is applied to magneto-resistance device with perpendicular magnetic anisotropic, under the prerequisite that guarantees perpendicular magnetic anisotropic, improve the character of interface and membrane structure effectively, thereby increase substantially the magneto-resistor of device.Comprising the composite magnetic layer with perpendicular magnetic anisotropic material for employing is wherein one deck or all two-layer magnetospheric giant magnetoresistance structure, and this composite magnetic layer is mainly used in the spin polarizability of raising magnetosphere and intermetallic metal bed boundary to improve the magnetoelectricity resistance of device; Comprise composite magnetic layer for employing and be wherein one deck or all two-layer magnetospheric tunnel junction structure with perpendicular magnetic anisotropic material, the spin polarizability that this composite magnetic layer not only can be used to improve magnetosphere and intermetallic metal bed boundary is with the magnetoelectricity resistance that improves device but also can effectively increase by two magnetospheric distances under the situation that keeps device magneto-resistor value not reduce substantially, weakens each other influence to guarantee the accuracy of device to the outfield response.In addition, composite magnetic layer of the present invention also has and reduces adverse field or the reverse current of coercitive work in order to reduce corresponding device.
Description of drawings
Fig. 1 is the multi-layer film structure schematic diagram that whole two-layer magnetospheres all adopt the perpendicular magnetic anisotropic material in the prior art; This multilayer film generally is used for the tunneling magnetic resistance device;
Fig. 2 is in the some embodiments of the invention, and wherein certain one deck magnetosphere adopts the multi-layer film structure schematic diagram of the composite magnetic layer that comprises the perpendicular magnetic anisotropic material; This multilayer film generally is used for the giant magnetoresistance device;
Fig. 3 is in the some embodiments of the invention, and whole two-layer magnetospheres all adopt the multi-layer film structure schematic diagram of the composite magnetic layer that comprises the perpendicular magnetic anisotropic material; This multilayer film generally is used for the giant magnetoresistance device;
Fig. 4 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures that are used for the giant magnetoresistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM1/NM/TFM2/P-FM2/CAP;
Fig. 5 is in the some embodiments of the invention, adopts the composite magnetic layer comprise the perpendicular magnetic anisotropic material as the magnetospheric membrane structure one that is used for the tunneling magnetic resistance device of certain one deck wherein: the schematic diagram of SUB/UL/P-FM/TFM/I/FM/CAP;
Fig. 6 is in the some embodiments of the invention, adopts the composite magnetic layer comprise the perpendicular magnetic anisotropic material as the magnetospheric membrane structure two that is used for the tunneling magnetic resistance device of certain one deck wherein: the schematic diagram of SUB/UL/P-FM/TNM/I/FM/CAP;
Fig. 7 is in the some embodiments of the invention, adopts the composite magnetic layer comprise the perpendicular magnetic anisotropic material as the magnetospheric membrane structure three that is used for the tunneling magnetic resistance device of certain one deck wherein: the schematic diagram of SUB/UL/P-FM/TFM/TNM/I/FM/CAP;
Fig. 8 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures one that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM/I/P-FM2/CAP;
Fig. 9 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures two that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TNM/I/P-FM2/CAP;
Figure 10 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures three that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM/TNM/I/P-FM2/CAP;
Figure 11 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures four that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM1/I/TFM2/P-FM2/CAP;
Figure 12 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures five that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TNM1/I/TNM2/P-FM2/CAP;
Figure 13 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures six that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM/I/TNM/P-FM2/CAP;
Figure 14 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures seven that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM1/TNM/I/TFM2/P-FM2/CAP;
Figure 15 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures eight that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM/TNM1/I/TNM2/P-FM2/CAP;
Figure 16 is in the some embodiments of the invention, adopts the whole two-layer magnetospheric membrane structures nine that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise the perpendicular magnetic anisotropic material: the schematic diagram of SUB/UL/P-FM1/TFM1/TNM1/I/TNM2/TFM2/P-FM2/CAP;
Figure 17 is in the some embodiments of the invention, adopts the composite magnetic layer comprise perpendicular magnetic anisotropic material and soft magnetism thin layer as the magnetospheric membrane structure that is used for the giant magnetoresistance device of certain one deck wherein: the schematic diagram of SUB/UL/S-FM/P-FM/TFM/NM/FM/CAP;
Figure 18 is in the some embodiments of the invention, adopts one of whole two-layer magnetospheric membrane structures that are used for the tunneling magnetic resistance device of composite magnetic layer conduct that comprise perpendicular magnetic anisotropic material and soft magnetism thin layer: the schematic diagram of SUB/UL/P-FM1/TFM1/I/TFM2/P-FM2/S-FM/CAP;
Figure 19 is that membrane structure is Pt (10nm)/[Pt (0.6nm)/Co (0.4nm)] in the embodiment of the invention 1
5The brief summary R-H test result schematic diagram of/Co (0.4nm)/Cu (2nm)/Co (4nm)/Ta (10nm);
Figure 20 is that membrane structure is the brief summary R-H test result schematic diagram of Ta (5nm)/Ru (10nm)/Ta (5nm)/[Pt (0.7nm)/Co (1.2nm)] 5/CoFeB (0.5nm)/AlOx (1nm)/CoFeB (4nm)/Ta (10nm) in the embodiment of the invention 2.
The drawing explanation:
FM represents the easily magnetosphere of axle in face; P-FM represents to have the magnetosphere of perpendicular magnetic anisotropic; NM represents to have the nonmagnetic metal that is used for giant magnetoresistance device architecture intermediate layer of longer spin diffusion length; I represents to be used for the barrier layer of tunneling magnetic resistance device architecture; TNM represents to be used for interface optimization and constitutes the metal level of composite magnetic layer with the magnetosphere with perpendicular magnetic anisotropy, this metal material has big spin diffusion length, be used for weakening two magnetospheres of tunnel junction structure and interact, and guarantee that tunneling magnetic resistance does not have reducing by a relatively large margin; TFM represents to be used for interface optimization and constitutes the metal level of composite magnetic layer with the magnetosphere with perpendicular magnetic anisotropy, and this metal material has high spin polarizability, is used to improve composite magnetic layer and near the free polarizability of NM layer or I bed boundary.S-FM represents to be used for the soft ferromagnetic layer of composite magnetic layer, and (soft magnetic material is defined as the magnetic material with low-coercivity and high magnetic permeability.Soft magnetic material is easy to magnetization, also is easy to demagnetization), it has very little coercive force, and it and the compound back of other magnetic materials can reduce the adverse field or the reverse current of corresponding device as the composite magnetic layer.CAP represents cover layer; UL represents bottom; SUB represents substrate.
Embodiment
The multilayer film of perpendicular magnetic anisotropic provided by the invention is a kind of multi-layer film structure that improves the interface that has, comprise successively from the bottom to top: substrate, bottom, magnetic layer, intermediate layer, last magnetosphere and cover layer, described intermediate layer is non-magnetic metal layer or barrier layer; At least one is the composite magnetic layer in described magnetic layer and the last magnetosphere, described composite magnetic layer comprises body layer and transition zone, described body layer adopts the perpendicular magnetic anisotropic material, described transition zone adopts spin polarizability to be higher than the magnetic metal material of described perpendicular magnetic anisotropic material, and described transition zone is between described body layer and intermediate layer.Wherein, when the intermediate layer was non-magnetic metal layer, the multilayer film of described perpendicular magnetic anisotropic was the membrane structure that is used for the giant magnetoresistance device, and the multilayer film of described perpendicular magnetic anisotropic was the membrane structure that is used for tunnel junction element when the intermediate layer was barrier layer.
When described intermediate layer was barrier layer, described composite magnetic layer also comprised second transition zone, and described second transition zone adopts spin diffusion length to make greater than the metal material of 3nm, and described second transition zone is between described body layer and barrier layer.Among the present invention, previously described transition zone is between body layer and intermediate layer, but described transition zone might not be limited to and be adjacent to body layer and intermediate layer, such as inserting second transition zone between body layer and transition zone, in like manner, also can insert transition zone between second transition zone and body layer.In addition, when described intermediate layer is barrier layer, also can adopt spin diffusion length to make described transition zone separately greater than the metal material of 3nm.
Described composite magnetic layer also comprises soft ferromagnetic layer, and when described composite magnetic layer was the magnetic layer, described soft ferromagnetic layer was between described body layer and bottom; When described composite magnetic layer is that described soft ferromagnetic layer is between described body layer and cover layer when going up magnetosphere.
Described body layer adopts ferromagnetic metal or the alloy firm with perpendicular magnetic anisotropic, the preferred 3～100nm of thickness.
Described body layer adopts the single layer alloy film that has the periodicity multilayer film of perpendicular magnetic anisotropic or have perpendicular magnetic anisotropic; When described body layer employing had the periodicity multilayer film of perpendicular magnetic anisotropic, described body layer was Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film or CoCr/Pt multilayer film; When described body layer employing had the single layer alloy film of perpendicular magnetic anisotropic, described body layer was that FePt alloy, PtCoNi alloy, the Co-Cr of CoPt alloy, L10 phase is alloy, TbFeCo alloy, GdFeCo alloy, Gd-Co alloy, GdFe alloy, TbFe alloy, TbCo/Cr alloy, CoGdZr alloy, CoGdSm alloy, GdTbFeCo alloy or GdTbFe alloy firm; Described Co-Cr is that alloy comprises Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt alloy.
The transition zone of described composite magnetic layer adopts Co, Fe, Ni, Co-Fe, Co-Fe-B, Co-Cr-Fe or Ni-Fe alloy to make the preferred 0.1～2nm of thickness.
The preferred Cu of second transition zone of described composite magnetic layer, Ru, Mg or Al make, the preferred 0.1～1.0nm of thickness.
Described soft ferromagnetic layer adopts Ni-Fe alloy or Fe-Al alloy to make the preferred 0.5nm～2.0nm of thickness.
The multilayer film of described perpendicular magnetic anisotropic is processed into the knot with certain flat shape of size from tens nanometer to tens of microns, and described flat shape comprises hollow or solid circle, ellipse, rectangle or regular polygon; The minor axis of described ellipse and major axis ratio are less than or equal to 1: 3, and the length-width ratio of described rectangle is less than or equal to 1: 3.
Below in conjunction with specific embodiment the present invention is done to describe further.
Embodiment 1
As shown in Figure 2, the multi-layer film structure of the perpendicular magnetic anisotropic of present embodiment is as follows: SUB/UL/P-FM/TFM/NM/FM/CAP.This multi-layer film structure can be used as the core cell of giant magnetoresistance device.
The preparation method of the multilayer film of the perpendicular magnetic anisotropic of present embodiment is as follows:
1) selects the Si-SiO that thickness is 1mm
2Substrate is as substrate SUB, and is better than 2 * 10 with vacuum on magnetron sputtering apparatus
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa during deposition, deposition 10nm Pt bottom UL on this substrate;
2) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, and Ar Pressure is the condition of 0.07Pa, and deposition has magnetosphere [Pt (0.6nm)/Co (the 0.4nm)] 55nm of perpendicular magnetic anisotropic on bottom UL, and promptly alternating growth 0.6nm Pt and 0.4nm Co are 5 times.
3) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa, at the Co of the metal level 0.4nm with the magnetosphere formation composite magnetic layer that deposits on the magnetosphere P-FM of perpendicular magnetic anisotropic and have perpendicular magnetic anisotropic;
4) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa, the Cu of deposition non-magnetic metal layer 2nm on metal level TFM.
5) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa, deposition magnetosphere Co 4nm on non-magnetic metal layer NM.
6) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa, the cover layer CAP of deposition 10nm Ta on magnetosphere FM.
This multi-layer film structure is through the later stage micro fabrication, and being prepared into size is 4 * 8 (μ m
2) brief summary.Its test result as shown in figure 19.Probe temperature is room temperature 300K, and test pattern is a constant current mode, and the measuring current size is 2.5mA.As we can see from the figure, perpendicular to the face direction, brief summary shows the magneto-resistor with the linear response of external magnetic field, and its size is 2%, and magnetic field sensitivity can reach 0.001%/Oe, can be used for magnetic sensor.
As shown in Figure 5, the multi-layer film structure of the perpendicular magnetic anisotropic that present embodiment provided is as follows: SUB/UL/P-FM/TFM/I/FM/CAP.This multi-layer film structure can be used as the core cell of tunnel junction magnetoresistance device.
The preparation method of the multilayer film of the perpendicular magnetic anisotropic of present embodiment is as follows:
1) selects the Si-SiO that thickness is 1mm
2Substrate is as substrate SUB, and is better than 2 * 10 with vacuum on magnetron sputtering apparatus
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa during deposition, deposits the bottom UL of Ta (5nm)/Ru (10nm)/Ta (5nm) on this substrate;
2) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, and Ar Pressure is the condition of 0.07Pa, and deposition has the magnetic layer-structure [Pt (0.7nm)/Co (1.2nm)] of perpendicular magnetic anisotropic on bottom UL
59.5nm promptly alternating growth 0.7nm Pt and 1.2nm Co are 5 times.
3) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.06nm/s, Ar Pressure is the condition of 0.07Pa, at the Co of the metal inserting layer 0.5nm with the magnetosphere formation composite magnetic layer that deposits on the magnetosphere P-FM of perpendicular magnetic anisotropic and have perpendicular magnetic anisotropic
40Fe
40B
20
4) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6A, deposition rate is 0.07nm/s, Ar Pressure is the condition of 0.07Pa, the AlO of deposition barrier layer 1nm on metal inserting layer TFM
x
6) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.06nm/s, and Ar Pressure is the condition of 0.07Pa, and deposition has the Co of the magnetosphere 4nm of magnetic anisotropy in the face on barrier layer I
40Fe
40B
20
7) on magnetron sputtering apparatus, be better than 2 * 10 with vacuum
-6Pa, deposition rate is 0.1nm/s, Ar Pressure is the condition of 0.07Pa, deposition 10nm Ta cover layer CAP on the magnetosphere FM of magnetic anisotropy in having face.
This multi-layer film structure is through the later stage micro fabrication, and being prepared into size is 4 * 8 (μ m
2) tunnel junction structure.Its test result as shown in figure 20.Probe temperature is room temperature 300K, and test pattern is a constant current mode, and the measuring current size is 2.5mA, perpendicular to the face direction, brief summary shows the magneto-resistor with the linear response of external magnetic field, and its size is 15%, magnetic field sensitivity can reach 0.0042%/Oe, can be used for magnetic sensor.
Embodiment 3～8
Embodiment 3～8th, and the structure that is used for the giant magnetoresistance device is the multilayer film (as shown in Figure 2) of SUB/UL/P-FM/TFM/NM/FM/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 1.
(" metal level " represents the metal level that constitutes the composite magnetic layer with the magnetosphere with perpendicular magnetic anisotropic jointly in the following form)
Table 1
Embodiment 9～14
Embodiment 9～14th, and the structure that is used for the giant magnetoresistance device is the multilayer film (as shown in Figure 3) of SUB/UL/P-FM1/TFM/NM/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 2.
Table 2
Embodiment 15～20
Embodiment 15～20th, and the structure that is used for the giant magnetoresistance device is the multilayer film (as shown in Figure 4) of SUB/UL/P-FM1/TFM1/NM/TFM2/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 3.
Table 3
Embodiment 21～26
Embodiment 21～26th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in Figure 5) of SUB/UL/P-FM/TFM/I/FM/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 4.
Table 4
Embodiment 27～32
Embodiment 27～32nd, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in Figure 6) of SUB/UL/P-FM/TNM/I/FM/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 5.
Table 5
Embodiment 33～38
Embodiment 33～38th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in Figure 7) of SUB/UL/P-FM/TFM/TNM/I/FM/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 6.
Table 6
Embodiment 39～44
Embodiment 39～44th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in Figure 8) of SUB/UL/P-FM1/TFM/I/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 7.
Table 7
Embodiment 45～50
Embodiment 39～44th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in Figure 9) of SUB/UL/P-FM1/TNM/I/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 8.
Table 8
Embodiment 51～56
Embodiment 51～56th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 10) of SUB/UL/P-FM1/TFM/TNM/I/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 9.
Table 9
Embodiment 57～62
Embodiment 57～62nd, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 11) of SUB/UL/P-FM1/TFM1/I/TFM2/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 10.
Table 10
Embodiment 63～68
Embodiment 63～68th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 12) of SUB/UL/P-FM1/TNM1/I/TNM2/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 11.
Table 11
Embodiment 69～74
Embodiment 69～74th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 13) of SUB/UL/P-FM1/TFM/I/TNM/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 12.
Table 12
Embodiment 75～80
Embodiment 75～80th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 14) of SUB/UL/P-FM1/TFM1/TNM/I/TFM2/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 13.
Table 13
Embodiment 81～86
Embodiment 81～86th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 15) of SUB/UL/P-FM1/TFM/TNM1/I/TNM2/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in table 14.
Table 14
Embodiment 87～92
Embodiment 87～92nd, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 16) of SUB/UL/P-FM1/TFM1/TNM1/I/TNM2/TFM2/P-FM2/CAP, and concrete material that described each layer of multilayer film adopted and the thickness of each layer are as shown in Table 15.
Table 15
Embodiment 93～98
Embodiment 93～95th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 17) of SUB/UL/S-FM/P-FM/TFM/NM/FM/CAP, embodiment 96～98th, and the structure that is used for the tunneling magnetic resistance device is the multilayer film (as shown in figure 18) of SUB/UL/P-FM1/TFM1/I/TFM2/P-FM2/S-FM/CAP
Concrete material that each layer of multilayer film adopted among the embodiment 93～98 and the thickness of each layer are shown in table 16.
Table 16
Each embodiment of Ti Chuing is in order to explain practical application of the present invention better herein, and makes person skilled in the art can utilize the present invention.But the general skilled person of this area be appreciated that top description and embodiment only be for explanation for example.Core concept of the present invention is to comprise have a perpendicular magnetic anisotropic magnetospheric and be used for the interface factor that this structure of magneto-resistance device (giant magnetoresistance and tunnel magneto resistance) is unfavorable for that magneto-resistor improves in order to overcome to exist, comprise magnetospheric composite magnetic layer by employing and improve this membrane structure that is applied to magneto-resistance device with perpendicular magnetic anisotropic, under the prerequisite that guarantees perpendicular magnetic anisotropic, improve the character of interface and membrane structure effectively, thereby increase substantially magnetoelectricity resistance and its accuracy of device the outfield response.
Claims (10)
1. the multilayer film of a perpendicular magnetic anisotropic comprises: substrate, bottom, magnetic layer, intermediate layer, last magnetosphere and cover layer from the bottom to top successively; It is characterized in that, at least one is the composite magnetic layer in described magnetic layer and the last magnetosphere, described composite magnetic layer comprises body layer and transition zone, described body layer adopts the perpendicular magnetic anisotropic material, described transition zone adopts spin polarizability to be higher than the magnetic metal material of described perpendicular magnetic anisotropic material, and described transition zone is between described body layer and intermediate layer.
2. the multilayer film of perpendicular magnetic anisotropic according to claim 1, it is characterized in that, described intermediate layer is a barrier layer, described composite magnetic layer also comprises second transition zone, described second transition zone adopts spin diffusion length to make greater than the metal material of 3nm, and described second transition zone is between described body layer and barrier layer.
3. the multilayer film of perpendicular magnetic anisotropic according to claim 2 is characterized in that, second transition zone of described composite magnetic layer adopts Cu, Ru, Mg or Al to make, and thickness is 0.1～1.0nm.
4. the multilayer film of perpendicular magnetic anisotropic according to claim 1, it is characterized in that, described composite magnetic layer also comprises soft ferromagnetic layer, and described soft ferromagnetic layer is between magnetospheric body layer between the body layer of described magnetic layer and the described bottom or described and described cover layer.
5. the multilayer film of perpendicular magnetic anisotropic according to claim 4 is characterized in that, described soft ferromagnetic layer adopts Ni-Fe alloy or Fe-Al alloy to make, and thickness is 0.5nm～2.0nm.
6. the multilayer film of perpendicular magnetic anisotropic according to claim 1 is characterized in that, described body layer adopts ferromagnetic metal or the alloy firm with perpendicular magnetic anisotropic, and thickness is 3～100nm.
7. the multilayer film of perpendicular magnetic anisotropic according to claim 1 is characterized in that, described body layer adopts the single layer alloy film that has the periodicity multilayer film of perpendicular magnetic anisotropic or have perpendicular magnetic anisotropic.
8. the multilayer film of perpendicular magnetic anisotropic according to claim 7, it is characterized in that described periodicity multilayer film with perpendicular magnetic anisotropic comprises Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film or CoCr/Pt multilayer film; Single layer alloy film with perpendicular magnetic anisotropic comprises that the FePt alloy of CoPt alloy, L10 phase, PtCoNi alloy Co-Cr are alloy, TbFeCo alloy, GdFeCo alloy, Gd-Co alloy, GdFe alloy, TbFe alloy, TbCo/Cr alloy, CoGdZr alloy, CoGdSm alloy, GdTbFeCo alloy or GdTbFe alloy firm; Described Co-Cr is that alloy comprises Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt.
9. the multilayer film of perpendicular magnetic anisotropic according to claim 1 is characterized in that, the transition zone of described composite magnetic layer adopts Co, Fe, Ni, Co-Fe, Co-Fe-B, Co-Cr-Fe or Ni-Fe alloy to make, and thickness is 0.1～2nm.
10. the multilayer film of a perpendicular magnetic anisotropic, comprise successively from the bottom to top: substrate, bottom, the magnetic layer, barrier layer, last magnetosphere and cover layer, at least one is the magnetosphere of perpendicular magnetic anisotropic in described magnetic layer and the last magnetosphere, it is characterized in that, the magnetosphere of described perpendicular magnetic anisotropic is the composite magnetic layer, comprise body layer and transition zone, described body layer adopts the perpendicular magnetic anisotropic material, described transition zone adopts spin diffusion length to make greater than the metal material of 3nm, and described transition zone is between described body layer and barrier layer.
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