CN107587109B - Composite multi-layer membrane structure with high vertical off setting field and big overturning field platform - Google Patents
Composite multi-layer membrane structure with high vertical off setting field and big overturning field platform Download PDFInfo
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Abstract
The composite multi-layer membrane structure and preparation method thereof with high vertical off setting field and big overturning field platform that the invention discloses a kind of, is successively grown by Ferrimagnetic rare earth-transition alloy firm I, nonmagnetic metal separation layer and Ferrimagnetic rare earth-transition alloy firm II；Film I is XFeCo magnetically hard alloy material, and with a thickness of 7.5-30nm, wherein X is rare earth element tb or Dy and atomic percent is not less than 25.5%；Film II is GdFeCo magnetically soft alloy material, and with a thickness of 7.5-30nm, the atomic percent of Gd element is not higher than 24.5%；The vertical film surface of the direction of easy axis of film I and film II.Film I is rich mutually opposite with II, it can produce stable antiferromagnetic coupling structure, it is acted on using the part decoupling and Interlayer Exchange Coupling of separation layer, it is not required to that a cold treatment can generate higher vertical off setting field in composite multi-layer membrane material hard at this/soft and big overturning field platform, the nuclear structure material that can be used as vertical giant magnetoresistance or Spin Valve are applied in vertical magnetoelectronic devices.
Description
Technical field
The present invention relates to a kind of perpendicular magnetic spin electric device composite multilayer membrane material structure, more particularly to it is a kind of have compared with
High vertical off setting field and big overturning field platform composite multi-layer membrane structure and preparation method thereof, can be applied to magnetic spin electronics and surpass
Fast magnetic turnover technology Material Field.
Background technique
Vertical magnetoelectronic devices have the advantages that density height and thermal stability are good, become current development trend.It is vertical from
In the magnetoelectronic devices such as stopcock and tunnel knot, free layer and reference layer all have perpendicular magnetic anisotropy, and require sufficiently large difference
Different coercivity meets the free layer direction of magnetization in device and is easily not easy that outer field direction is followed to become with outfield and the reference layer direction of magnetization
The different functional requirements such as change.Since the overturning field difference of free layer and reference layer is not generally small in normal vertical magnetoelectronic devices,
There may be free layer and reference layers to overturn simultaneously when the temperature rises, leads to device operational failure.Device reliability is improved,
It is required that overturning field platform is as big as possible and use can produce high exchange biased reference layer.Traditional Ferromagnetic/Antiferromagnetic (FM/
AFM) the double-deck system, the direct friendship in external magnetic field after being cooled to low temperature higher than antiferromagnetic Ne&1&el temperature, from interface
Coupling is changed, so that the hysteresis loop of ferromagnetic layer is generated offset along magnetic direction, unidirectional anisotropy occurs, i.e., exchange biased phenomenon.
The sensibility of the exchange biased thermal stability problems that can be improved in memory device and magnetic recording read head, in high-density storage
Tool plays a very important role in part.But since anti-ferromagnetic layer material does not have perpendicular magnetic anisotropic, while interface is not
The magnetic moment being cancelled is limited, is difficult to obtain big vertical exchange bias effect.Meanwhile also needing the cold auxiliary in field, inconvenient for use, cost
It is high.
Summary of the invention
It is an object of the invention to overcome the shortcomings of the prior art, a kind of rich opposite coercivity difference of utilization is provided
The vertical compound hard soft multi-layer film structure of big Ferrimagnetic rare earth-transition system composition, generates obvious vertical exchange biasing
Effect and big overturning field platform improve device stability.
The technical solution of the present invention is as follows:
A kind of composite multi-layer membrane structure with high vertical off setting field and big overturning field platform, including the ferrous iron stacked gradually
Magnetic rare earth-transition alloy firm I, nonmagnetic metal separation layer and Ferrimagnetic rare earth-transition alloy firm II；The Ferrimagnetic is dilute
Soil-Transition-metal Alloys film I is XFeCo magnetically hard alloy material, and with a thickness of 7.5-30nm, wherein X is rare earth element tb or Dy and original
Sub- percentage is not less than 25.5%；The Ferrimagnetic rare earth-transition alloy firm II is GdFeCo magnetically soft alloy material, with a thickness of
The atomic percent of 7.5-30nm, Gd element is not higher than 24.5%；The Ferrimagnetic rare earth-transition alloy firm I and ferrous iron
The vertical film surface of direction of easy axis of magnetic rare earth-transition alloy firm II.
As hard magnetic material, selection has vertical each (Tb, the Dy) FeCo alloy that the present invention selects perpendicular magnetic anisotropy big
Anisotropy but the lesser GdFeCo alloy of coercivity are as soft magnetic materials；Ferrimagnetic rare earth-transition alloy firm I and Ferrimagnetic
Rare earth-transition alloy firm II is rich mutually on the contrary, be that the sub-lattice magnetic moment of rare earth element and transition elements is dominant respectively, can produce
Stable antiferromagnetic coupling structure；The nonmagnetic metal separation layer of insertion avoids two Ferrimagnetic layers from directly contacting, and realizes two ferrous irons
Part decoupling between magnetosphere, be easy to control realize two Ferrimagnetic layers independent overturning, generate apparent vertical off setting effect with
And big overturning field platform.It can adjust Interlayer Exchange Coupling effect by the thickness and ingredient of separation layer and two Ferrimagnetic layers, it can
Adjust vertical off setting field and the overturning field platform of sandwich.
Preferably, the thickness of the Ferrimagnetic rare earth-transition alloy firm I and Ferrimagnetic rare earth-transition alloy firm II
For 15-30nm.
Preferably, the material of the nonmagnetic metal separation layer is Ta, Pd or Pt.
Preferably, the nonmagnetic metal separation layer with a thickness of 0.5-2.5nm.
The preparation method specific steps of the above-mentioned composite multi-layer membrane structure with high vertical off setting field and big overturning field platform
It is as follows: the combined tessera target or ternary alloy three-partalloy target of high-purity rare earth patch and ferrocobalt target composition are put into magnetic control co-sputtering
The target position of room；Substrate after cleaning, drying is placed on the chip bench of vacuum sputtering room；Sputtering vacuum chamber is evacuated to reach
Vacuum degree 1 × 10-5For Pa hereinafter, logical high purity argon is as working gas, setting control argon flow waits sputtering operating air pressure steady
Determine and maintains setting sputtering work numerical value；The combined tessera target or ternary TbFeCo of magnetron sputtering Tb or Dy patch or
DyFeCo alloys target, the Ferrimagnetic rare earth-transition alloy firm I that control sputtering growth thickness is 7.5-30nm, and rare earth element
The atomic percent of Tb or Dy is not less than 25.5%；Then, direct current or radio-frequency sputtering nonmagnetic metal separation layer；Continue to sputter Gd
The combined tessera target or ternary alloy three-partalloy target GdFeCo of patch are 7.5-30nm in sputtering growth thickness on nonmagnetic metal separation layer
Ferrimagnetic rare earth-transition alloy firm II, and the atomic percent of rare earth Gd be not higher than 24.5%.
Preferably, the substrate is Si substrate and sputters and be formed with metal buffer layer, the metal buffer layer be Ta, Pd or
Person Pt, with a thickness of 2-10nm.
It preferably, further include being protected in direct current on the Ferrimagnetic rare earth-transition alloy firm II or radio-frequency sputtering metal
The step of sheath, the coat of metal is Ta, Pd or Pt, with a thickness of 2-10nm.
The invention has the benefit that
Utilize rich mutually opposite vertical rare earth-transition magnetically hard alloy film (Tb, the Dy) FeCo of Ferrimagnetic and soft magnetic alloy sheet
Film GdFeCo, generating has vertical hard/soft composite construction for stablizing antiferromagnetic coupling, realizes that nano thickness is ferrous by can promote
The non-magnetic metal spacer layer of magnetic rare earth-transition system perpendicular magnetic anisotropy avoids directly contacting between two Ferrimagnetic layers, realizes
Part decoupling is not required to a cold treatment just and can produce higher vertical off setting field, while also can produce greatly overturning field platform, from
And promote the application value of the composite material.Vertical exchange bias-field (reaching several hundred Oe) with higher and big overturning field platform
(~10kOe) hard soft composite multilayer membrane can be used as vertical giant magnetoresistance or the core material of Spin Valve is applied to vertical magnetoelectronic devices
In.
The double-deck coupled structure (Tb, Dy) FeCo/GdFeCo of Magnetic super resolution technical field is stored applied to conventional magneto-optic,
The middle GdFeCo material requirements direction of magnetization as data readout layer can quickly change with temperature, GdFeCo easy magnetizing axis when room temperature
In film surface, the easy magnetizing axis of GdFeCo material is then changed into vertical film surface direction when high temperature (~125 ゜ C).With the magnetic oversubscription
Distinguish that reading out structure material is different, easy magnetizing axis is exactly vertical film surface direction when GdFeCo alloy firm room temperature of the invention, with Asia
The richness of ferromagnetic layer I magnetically hard alloy is mutually opposite.Hard/soft composite multilayer membrane of FI/ metal/FI structure can be used as vertical giant magnetoresistance or from
The nuclear structure material of stopcock is applied in high density perpendicular magnetoelectronic devices.
Detailed description of the invention
Fig. 1 is the unusual Hall Curve of the composite multi-layer membrane structure of embodiment 1；
Fig. 2 is the unusual Hall Curve of the composite multi-layer membrane structure of embodiment 2.
Specific embodiment
The present invention is further described with attached drawing with reference to embodiments.
Embodiment 1
By the combined tessera target or ternary RE-mistake of high-purity rare earth Tb patch and Gd patch and ferrocobalt target composition
Cross the target position that mischmetal TbFeCo and GdFeCo target is respectively put into magnetic control co-sputtering room.By substrate (such as Si after cleaning, drying
Or the Si monocrystalline business substrate with thermal oxide layer) be placed on the chip bench of vacuum sputtering room.Sputtering vacuum chamber reaches vacuum
Degree 1 × 10-5For Pa hereinafter, logical high purity argon is as working gas, setting control argon flow waits sputtering operating air pressure to stablize simultaneously
Maintain setting sputtering work numerical value.Before target described in pre-sputtering, first can splash-proofing sputtering metal buffer layer on the substrate, it is described
Metal buffer layer can be Ta, Pd or Pt.With a thickness of 2-10nm.Magnetron sputtering combined tessera target or ternary TbFeCo alloy
Target, the Ferrimagnetic rare earth-transition alloy firm I that control sputtering growth thickness is 21nm, and the atomic percent of rare earth element tb
It is 26.2%.Then, direct current or radio-frequency sputtering nonmagnetic metal separation layer are Pd, and growth reaches setting thickness 2nm.Sputter ingredient
Rich phase the combined tessera target or ternary alloy three-partalloy target GdFeCo opposite with above-mentioned Ferrimagnetic magnetosphere, splash on nonmagnetic metal separation layer
The Ferrimagnetic rare earth-transition alloy firm II that growth thickness is 15nm is penetrated, and the atomic percent of rare earth Gd is 22%.Most
Afterwards, can on obtained composite material direct current or radio-frequency sputtering coat of metal, the coat of metal can be all Ta, Pd or
Person Pt, thickness is between 2-10nm.
Composite multi-layer membrane structure obtained is TbFeCo (21nm)/Pd (2nm)/GdFeCo (15nm), sputters system in structure
The magnetic characteristic of standby TbFeCo and GdFeCo film shows as rich rare earth and rich transitional face, and the equal vertical film of direction of easy axis respectively
Face.With reference to Fig. 1, it is 9.1kOe that perpendicular magnetization, which overturns field platform (difference), is by small its offset of unusual Hall go-and-return measurement
Vertical off setting field is 101.2Oe.
Embodiment 2
By the combined tessera target or ternary RE-mistake of high-purity rare earth Tb patch and Gd patch and ferrocobalt target composition
Cross the target position that mischmetal TbFeCo and GdFeCo target is respectively put into magnetic control co-sputtering room.By substrate (such as Si after cleaning, drying
Or the Si monocrystalline business substrate with thermal oxide layer) be placed on the chip bench of vacuum sputtering room.Sputtering vacuum chamber reaches vacuum
Degree 1 × 10-5For Pa hereinafter, logical high purity argon is as working gas, setting control argon flow waits sputtering operating air pressure to stablize simultaneously
Maintain setting sputtering work numerical value.Before target described in pre-sputtering, first can splash-proofing sputtering metal buffer layer on the substrate, it is described
Metal buffer layer can be Ta, Pd or Pt.With a thickness of 2-10nm.Magnetron sputtering combined tessera target or ternary TbFeCo alloy
Target, the Ferrimagnetic rare earth-transition alloy firm I that control sputtering growth thickness is 21nm, and the atomic percent of rare earth element tb
It is 25.6%.Then, direct current or radio-frequency sputtering nonmagnetic metal separation layer are Pd, and growth reaches setting thickness 2nm.Sputter ingredient
Rich phase the combined tessera target or ternary alloy three-partalloy target GdFeCo opposite with above-mentioned Ferrimagnetic magnetosphere, splash on nonmagnetic metal separation layer
The Ferrimagnetic rare earth-transition alloy firm II that growth thickness is 17.5nm is penetrated, and the atomic percent of rare earth Gd is
21.5%.Finally, can direct current or radio-frequency sputtering coat of metal, the coat of metal can be same on obtained composite material
For Ta, Pd or Pt, thickness is between 2-10nm.
Composite multi-layer membrane structure obtained is TbFeCo (21nm)/Pd (2nm)/GdFeCo (17.5nm), is sputtered in structure
The magnetic characteristic for preparing TbFeCo and GdFeCo film shows as rich rare earth and rich transitional face, and the equal vertical film of direction of easy axis respectively
Face.With reference to Fig. 2, it is 11.1kOe that perpendicular magnetization, which overturns field platform (difference), is by small its offset of unusual Hall go-and-return measurement
Vertical off setting field is 209.5Oe.
Those of ordinary skill in the art remain to it is found that when design parameter and component of the invention changes in following ranges
Access same as the previously described embodiments or similar technical effect:
It is a kind of with high vertical off setting field and the composite multi-layer membrane structure of big overturning field platform includes the ferrous iron stacked gradually
Magnetic rare earth-transition alloy firm I, nonmagnetic metal separation layer and Ferrimagnetic rare earth-transition alloy firm II；The Ferrimagnetic is dilute
Soil-Transition-metal Alloys film I is XFeCo magnetically hard alloy material, and with a thickness of 7.5-30nm, preferably 15-30nm, wherein X is rare earth
Element T b or Dy and atomic percent are not less than 25.5%；The Ferrimagnetic rare earth-transition alloy firm II is GdFeCo soft magnetism
Alloy material, with a thickness of 7.5-30nm, preferably 15-30nm, the atomic percent of Gd element is not higher than 24.5%；It is described non-
The material of magnetic metallic spacer is Ta, Pd or Pt, with a thickness of 0.5-2.5nm；The Ferrimagnetic rare earth-transition alloy firm I and
The vertical film surface of direction of easy axis of Ferrimagnetic rare earth-transition alloy firm II.
Above-described embodiment is only used to further illustrate answering with high vertical off setting field and big overturning field platform of the invention
Close multi-layer film structure and preparation method, but the invention is not limited to embodiments, according to the technical essence of the invention to
Any simple modification, equivalent change and modification made by upper embodiment, fall within the scope of protection of technical solution of the present invention.
Claims (5)
1. a kind of composite multi-layer membrane structure with high vertical off setting field and big overturning field platform, it is characterised in that: including successively
Ferrimagnetic rare earth-transition alloy firm I, nonmagnetic metal separation layer and the Ferrimagnetic rare earth-transition alloy firm II of stacking；It is described
Ferrimagnetic rare earth-transition alloy firm I is XFeCo magnetically hard alloy material, and with a thickness of 7.5-30nm, wherein X is rare earth element tb
Or Dy and atomic percent are not less than 25.5%；The Ferrimagnetic rare earth-transition alloy firm II is GdFeCo magnetically soft alloy material
Material, with a thickness of 7.5-30nm, the atomic percent of Gd element is not higher than 24.5%；The Ferrimagnetic rare earth-transition alloy firm
The vertical film surface of direction of easy axis of I and Ferrimagnetic rare earth-transition alloy firm II；The material of the nonmagnetic metal separation layer is
Ta, Pd or Pt, the nonmagnetic metal separation layer with a thickness of 0.5-2.5nm.
2. composite multi-layer membrane structure according to claim 1, it is characterised in that: the Ferrimagnetic rare earth-transition alloy is thin
Film I and Ferrimagnetic rare earth-transition alloy firm II with a thickness of 15-30nm.
3. the preparation of the composite multi-layer membrane structure of any of claims 1 or 2 with high vertical off setting field and big overturning field platform
Method, it is characterised in that specific step is as follows:
The combined tessera target or ternary alloy three-partalloy target of high-purity rare earth patch and ferrocobalt target composition are put into magnetic control co-sputtering
The target position of room；Substrate after cleaning, drying is placed on the chip bench of vacuum sputtering room；Sputtering vacuum chamber is evacuated to reach
Vacuum degree 1 × 10-5For Pa hereinafter, logical high purity argon is as working gas, setting control argon flow waits sputterings operating air pressure
Stablize and maintains setting sputtering work numerical value；The combined tessera target or ternary TbFeCo of magnetron sputtering Tb or Dy patch or
DyFeCo alloys target, the Ferrimagnetic rare earth-transition alloy firm I that control sputtering growth thickness is 7.5-30nm, and rare earth element
The atomic percent of Tb or Dy is not less than 25.5%；Then, direct current or radio-frequency sputtering nonmagnetic metal separation layer；Continue to sputter Gd
The combined tessera target or ternary alloy three-partalloy target GdFeCo of patch are 7.5-30nm in sputtering growth thickness on nonmagnetic metal separation layer
Ferrimagnetic rare earth-transition alloy firm II, and the atomic percent of rare earth Gd be not higher than 24.5%.
4. preparation method according to claim 3, it is characterised in that: the substrate is Si substrate and sputtering is formed with metal
Buffer layer, the metal buffer layer is Ta, Pd or Pt, with a thickness of 2-10nm.
5. preparation method according to claim 3, it is characterised in that: further include in the Ferrimagnetic rare earth-transition alloy
On film II direct current perhaps radio-frequency sputtering coat of metal the step of the coat of metal be Ta, Pd or Pt, with a thickness of 2-
10nm。
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