CN105448463A - Optical mold ferromagnetic resonance enhancing multilayer film and preparation method of optical mold ferromagnetic resonance enhancing multilayer film - Google Patents
Optical mold ferromagnetic resonance enhancing multilayer film and preparation method of optical mold ferromagnetic resonance enhancing multilayer film Download PDFInfo
- Publication number
- CN105448463A CN105448463A CN201610024678.2A CN201610024678A CN105448463A CN 105448463 A CN105448463 A CN 105448463A CN 201610024678 A CN201610024678 A CN 201610024678A CN 105448463 A CN105448463 A CN 105448463A
- Authority
- CN
- China
- Prior art keywords
- magnetic anisotropy
- uniaxial magnetic
- anisotropy layer
- multilayer film
- ferromagnetic resonance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
The embodiment of the invention discloses an optical mold ferromagnetic resonance enhancing multilayer film and a preparation method of the optical mold ferromagnetic resonance enhancing multilayer film. The multilayer film comprises a first single-shaft magnetic anisotropy layer, a non-magnetic isolation layer and a second single-shaft magnetic anisotropy layer, wherein the first single-shaft magnetic anisotropy layer and the second single-shaft magnetic anisotropy layer have the same easily magnetized shaft direction; the thickness of the non-magnetic isolation layer is configured into a state that the first single-shaft magnetic anisotropy layer and the second single-shaft magnetic anisotropy layer are in antiferromagnetic coupling. In the optical mold ferromagnetic resonance enhancing multilayer film provided by the embodiment of the invention, the two single-shaft magnetic anisotropy layers ensure the maintaining capability of low-magnetic-loss ferromagnetic resonance in the zero bias magnetic field along the endogenous magnetic anisotropy field; in addition, through the interlayer antiferromagnetic coupling effect, on one hand, the magnetic moments of the two single-shaft magnetic anisotropy layers with the same easily magnetized shaft direction advance towards the effective magnetic field in the opposite directions; on the other hand, the optical film resonance frequency and the magnetic conductivity of the ferromagnetic resonance multilayer film are greatly improved.
Description
Technical field
The present invention relates to soft magnetic material film technical field, particularly relate to multilayer film of a kind of optical mode ferromagnetic resonance enhancing and preparation method thereof.
Background technology
Ferromagnetic resonance is ferromagnetic material in the microwave magnetic field of certain applying constant external magnetic field and certain frequency, when meeting certain condition, produce the phenomenon of strong absorption resonance, it belongs to the basic physical phenomenon of one of microwave soft magnetic material, and the various microwave devices utilizing ferromagnetic resonance phenomenon to make are widely used in fields such as communication, information, Aero-Space, military affairs.
Wherein, the ferromagnetic resonance frequency of microwave soft magnetic material determines the upper limiting frequency of microwave device, and along with the development of science and technology, the upper limiting frequency of microwave device requires more and more higher, correspondingly, requires also more and more higher to the ferromagnetic resonance frequency of microwave soft magnetic material.
The resonance frequency of microwave soft magnetic material mainly comprises acoustic mode resonance frequency and optical mode resonance frequency.In prior art, the acoustic mode resonance frequency of microwave soft magnetic material obtains in microwave device to be applied preferably, but it is more and more difficult to rely on raising acoustic mode resonance frequency to obtain higher ferromagnetic resonance frequency at present; At Multilayer system, optical mode resonance frequency generally higher than acoustic mode, but due to the magnetic permeability of optical mode lower, do not obtain practical application.Therefore, how on the basis playing optical mode high ferromagnetic resonance frequency characteristic, improve its magnetic permeability, reach degree of being practical, become problem demanding prompt solution.
Summary of the invention
Provide multilayer film of a kind of optical mode ferromagnetic resonance enhancing and preparation method thereof in the embodiment of the present invention, based on optical mode ferromagnetic resonance, solve in prior art the ferromagnetic resonance frequency improving microwave soft magnetic material and the problem improving magnetic permeability.
In order to solve the problems of the technologies described above, the embodiment of the invention discloses following technical scheme:
The multilayer film that a kind of optical mode ferromagnetic resonance strengthens, comprise the first uniaxial magnetic anisotropy layer, nonmagnetic spacer layers and the second uniaxial magnetic anisotropy layer, described nonmagnetic spacer layers is folded between described first uniaxial magnetic anisotropy layer and described second uniaxial magnetic anisotropy layer, described first uniaxial magnetic anisotropy layer is consistent with the easy axis of described second uniaxial magnetic anisotropy layer, and the thickness of described nonmagnetic spacer layers is configured to make described first uniaxial magnetic anisotropy layer and described second uniaxial magnetic anisotropy layer antiferromagnetic coupling.
Preferably, described first uniaxial magnetic anisotropy layer is identical with the thickness of described second uniaxial magnetic anisotropy layer.
Preferably, the thickness of described first uniaxial magnetic anisotropy layer and/or described second uniaxial magnetic anisotropy layer is
Preferably, described first uniaxial magnetic anisotropy layer and/or described second uniaxial magnetic anisotropy layer comprise ferromagnetic elements and doped chemical, and described ferromagnetic elements is evenly distributed, and described doped chemical is along a direction distribution gradient.
Preferably, described ferromagnetic elements comprises one or more the combination in Fe, Ni, Co.
Preferably, described doped chemical comprises the composite component in nonmetalloid, metallic element and/or oxide.
Preferably, the nonmetalloid in described doped chemical comprises one or more the combination in B, C, N, O, Si; Metallic element in described doped chemical comprises one or more the combination in Hf, Zr, Al, Nb, Ta, Ru, V, Mo, W, Cr; Oxide in described doped chemical comprises Al
2o
3, MgO, ZrO
2, ZnO, HfO
2, SiO
2, TiO
2, Ta
2o
5, V
2o
5, Nd
2o
3, Cr
2o
3, (Ba, Sr) TiO
3in one or more combination.
Preferably, described nonmagnetic spacer layers comprises metal and/or oxide.
Preferably, the metal in described nonmagnetic spacer layers comprises one or more the combination in Ru, Ta, Au, Hf, Cr, Nb; Oxide in described nonmagnetic spacer layers comprises Al
2o
3, MgO, SiO
2in one or more combination.
A preparation method for the multilayer film that optical mode ferromagnetic resonance strengthens, adopt vacuum magnetic-control sputtering instrument, described method comprises:
Step S100: sputter the first uniaxial magnetic anisotropy layer on substrate;
Step S200: the certain thickness nonmagnetic spacer layers of uniform sputter on described first uniaxial magnetic anisotropy layer;
Step S300: the second uniaxial magnetic anisotropy layer that sputtering is consistent with the easy axis of described first uniaxial magnetic anisotropy layer on described nonmagnetic spacer layers, and the thickness of nonmagnetic spacer layers is configured to make to meet antiferromagnetic coupling between described first uniaxial magnetic anisotropy layer and described second uniaxial magnetic anisotropy layer.
From above technical scheme, in the multilayer film that a kind of optical mode ferromagnetic resonance that the embodiment of the present invention provides strengthens, the uniaxial magnetic anisotropy of the first uniaxial magnetic anisotropy layer and the second uniaxial magnetic anisotropy layer ensure that two uniaxial magnetic anisotropy layers still can keep along interior magnetisation anisotropy field the ferromagnetic resonance that magnetic loss is less under zero bigoted magnetic field; In addition, the anti-ferromagnetic coupling interaction of the first uniaxial magnetic anisotropy layer and the second uniaxial magnetic anisotropy layer, make the magnetic moment difference effective magnetic field precession in the opposite direction of the two uniaxial magnetic anisotropy layers with identical easy axis on the one hand, thus the optical mode ferromagnetic resonance amplitude of the two-layer uniaxial magnetic anisotropy layer causing position mutually contrary just superposes enhancing, thus improve magnetic permeability; On the other hand, strong antiferromagnetic coupling field is applied on the magnetic moment of precession, and the optical mode resonance frequency of ferromagnetic resonance multilayer film is significantly improved.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, for those of ordinary skills, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The multi-layer film structure schematic diagram one that a kind of optical mode ferromagnetic resonance that Fig. 1 provides for the embodiment of the present invention strengthens;
The multi-layer film structure schematic diagram two that a kind of optical mode ferromagnetic resonance that Fig. 2 provides for the embodiment of the present invention strengthens;
Optical mode superposition schematic diagram in the multilayer film that a kind of optical mode ferromagnetic resonance that Fig. 3 provides for the embodiment of the present invention strengthens;
Fig. 4 is the vertical view of optical mode superposition schematic diagram in Fig. 3;
Acoustic mode superposition schematic diagram in the multilayer film that a kind of optical mode ferromagnetic resonance that Fig. 5 provides for the embodiment of the present invention strengthens;
Fig. 6 is the vertical view of acoustic mode superposition schematic diagram in Fig. 4;
Preparation method's schematic flow sheet of the multilayer film that a kind of optical mode ferromagnetic resonance that Fig. 7 provides for the embodiment of the present invention strengthens;
Fig. 8 is uniaxial magnetic anisotropy layer sputtering schematic diagram in the embodiment of the present invention;
Fig. 9 is nonmagnetic spacer layers sputtering schematic diagram in the embodiment of the present invention;
Symbol in Fig. 1-Fig. 9 is expressed as: 1-first uniaxial magnetic anisotropy layer, 2-nonmagnetic spacer layers, 3-second uniaxial magnetic anisotropy layer, 4-round turntable, the ferromagnetic parent material target of 51-, 52-doped chemical target, 53-nonmagnetic spacer layers sputtering target, 6-substrate.
Embodiment
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
In order to the optical mode resonance frequency of microwave soft magnetic material and magnetic permeability be developed, and make it reach degree of being practical, embodiments provide the multilayer film that a kind of optical mode ferromagnetic resonance strengthens.The multi-layer film structure schematic diagram one that a kind of optical mode ferromagnetic resonance that Fig. 1 provides for the embodiment of the present invention strengthens, the multi-layer film structure schematic diagram two that a kind of optical mode ferromagnetic resonance that Fig. 2 provides for the embodiment of the present invention strengthens, as Fig. 1 and shown in composition graphs 2, the multilayer film that a kind of optical mode ferromagnetic resonance that the embodiment of the present invention provides strengthens comprises the first uniaxial magnetic anisotropy layer 1, nonmagnetic spacer layers 2 and the second uniaxial magnetic anisotropy layer 3, nonmagnetic spacer layers 2 is folded between the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3, and the first uniaxial magnetic anisotropy layer 1 consistent with the easy axis of the second uniaxial magnetic anisotropy layer 3 (as the arrow in Fig. 1 represents direction), magnetic moment orientation contrary (arrow in Fig. 2 represents direction).Wherein, the uniaxial magnetic anisotropy of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 ensure that two uniaxial magnetic anisotropy layers still can keep along interior magnetisation anisotropy field the ferromagnetic resonance that magnetic loss is less under zero magnetic field.
In addition, control nonmagnetic spacer layers 2 to appropriate thickness and make the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 antiferromagnetic coupling mutually.In embodiments of the present invention, the thickness of nonmagnetic spacer layers 2 is selected
in can meet arbitrary thickness of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 antiferromagnetic coupling condition mutually.That is, those skilled in the art can carry out corresponding selection to the thickness of nonmagnetic spacer layers 2 according to actual needs within the scope of this, such as,
or
deng, as long as this thickness makes the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 antiferromagnetic coupling, it all should fall within protection scope of the present invention.In view of the thickness of nonmagnetic spacer layers 2 and the material of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 and thickness related, unified numerical value cannot be provided, but its antiferromagnetic coupling situation can be determined by hysteresis measurement.
In embodiments of the present invention, the anti-ferromagnetic coupling interaction of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3, make the magnetic moment difference effective magnetic field precession in the opposite direction of the two uniaxial magnetic anisotropy layers with identical easy axis on the one hand, thus the optical mode ferromagnetic resonance amplitude of the two-layer uniaxial magnetic anisotropy layer causing position mutually contrary just superposes enhancing, thus improve magnetic permeability; On the other hand, strong antiferromagnetic coupling field is applied on the magnetic moment of precession, the optical mode resonance frequency of ferromagnetic resonance multilayer film is significantly improved, makes the degree that the optical mode of microwave soft magnetic material reaches practical.
To understand in the multilayer film that optical mode ferromagnetic resonance that the embodiment of the present invention provides strengthens optical mode resonance frequency better for the ease of those skilled in the art and magnetic permeability improves, acoustic mode resonates the mechanism weakened, be described in detail below in conjunction with accompanying drawing.
Optical mode superposition schematic diagram in the multilayer film that a kind of optical mode ferromagnetic resonance that Fig. 3 provides for the embodiment of the present invention strengthens, wherein, the M in Fig. 3
1and M
2represent the magnetic moment of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 respectively, m
1and m
2represent M respectively
1and M
2at microwave alternating field H
acprojection on direction, H
krepresent uniaxial magnetic anisotropy field, J
effrepresent antiferromagnetic coupling field, the microwave field applied when Hac is ferromagnetic resonance.
The antiferromagnetic coupling of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 makes magnetic moment M
1and M
2along magnetic field effective field H
eff(H
eff=H
k+ J
eff) precession in the opposite direction.Fig. 4 is the vertical view of optical mode superposition schematic diagram in Fig. 3, as shown in Figure 4, and magnetic moment M
1and M
2along effective magnetic field H
effprecession just in time makes the optical mode resonance amplitude of anti-phase (precession direction is contrary) just superpose enhancing in the opposite direction, thus improves magnetic permeability.Wherein, optical mode resonance amplitude is at microwave alternating field H
acon with amplitude m
ac=2mcos ω t, m=m
1=m
2.In addition, strong antiferromagnetic coupling field J
effbe applied on the magnetic moment of two uniaxial magnetic anisotropy layer precession, optical mode resonance frequency is significantly improved.
Acoustic mode superposition schematic diagram in the multilayer film that a kind of optical mode ferromagnetic resonance that Fig. 5 provides for the embodiment of the present invention strengthens, Fig. 6 is the vertical view of acoustic mode superposition schematic diagram in Fig. 5, as Fig. 5 and shown in composition graphs 6, magnetic moment M
1and M
2along effective magnetic field H
kprecession just in time makes the resonance of the acoustic mode of homophase (precession direction is identical) cancel out each other in the opposite direction.Wherein, acoustic mode resonance frequency is at microwave alternating field H
acamplitude perseverance on direction is zero, m
ac≡ 0.
Known accordingly, the antiferromagnetic coupling Multilayer system that the embodiment of the present invention is made up of uniaxial magnetic anisotropy layer and nonmagnetic spacer layers 2 achieves optical mode resonant check and disappears mutually with acoustic mode resonance, thus make its optical mode resonance frequency significantly promote more than 2 times than individual layer ferromagnetic film, ferromagnetic resonance frequency is up to more than 10GHz under without applied bias magnetic field condition, and optical mode magnetic permeability is up to 10-30, far away higher than common multilayer film optical mode magnetic permeability; Show that magnetic anisotropy antiferromagnetic coupling multilayer film prepared by the present invention is received at microwave material and reach degree of being practical.
Wherein, the multilayer film that optical mode ferromagnetic resonance that the embodiment of the present invention provides strengthens is mainly used in microwave device, needs two uniaxial magnetic anisotropy layers to have certain thickness, otherwise due to total magnetic moment number too little, there is provided the magnetic influence of microwave device too little, will using value be lost.But be subject to the restriction of magnetoresistance effect Interlayer Exchange Coupling operating distance, two uniaxial magnetic anisotropy layers again can not be too thick, therefore, there is a rational scope in the Thickness of two uniaxial magnetic anisotropy layers.Specifically, two uniaxial magnetic anisotropy layers can not be too thin, is on the one hand because microwave device is to the requirement of large magnetic moment, be also on the other hand because two uniaxial magnetic anisotropy layers too thin after be difficult to realize antiferromagnetic coupling; Two ferromagnetic layers can not be too thick, because the layer coupling intensity of two ferromagnetic films separated by nonmagnetic layer, not only by the impact (thinner stiffness of coupling is larger) of nonmagnetic layer thickness, also relevant with ferromagnetic film thickness.When nonmagnetic spacer layers thickness is certain, there is a thickness maximum in two ferromagnetic layer thickness, when its thickness exceeds this maximum, the film exceeding part is very weak by interlayer coupling, ferromagnetic coupling composition will be increased on original antiferromagnetic coupling basis, thus weaken the relative intensity of optical mode resonance, bring adverse effect.
Based on above-mentioned factor, in a kind of preferred embodiment of the present invention, the lower thickness limit and the upper limit that set two uniaxial magnetic anisotropy layers are respectively
with
namely the thickness of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 is selected
in arbitrary numerical value, such as,
or
deng.Wherein, in order to ensure that the spin current that the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 are launched when ferromagnetic resonance is cancelled out each other, it is made to get identical thickness, to reduce the excess loss of launching spin current and bringing.
In a kind of preferred embodiment of the present invention, the first uniaxial magnetic anisotropy layer 1 and/or the second uniaxial magnetic anisotropy layer 3 comprise ferromagnetic elements and doped chemical.Wherein, ferromagnetic elements is evenly distributed, doped chemical is along a direction distribution gradient, the gradient distribution of doped chemical causes the uniaxial magnetic anisotropy of ferromagnetic thin film, and namely the easy axis of the first uniaxial magnetic anisotropy layer 1 and the second uniaxial magnetic anisotropy layer 3 is determined by the gradient distribution arrangement of doped chemical.
In addition, ferromagnetic elements can select one or more the combination in Fe, Ni and Co; Doped chemical can select the composite component in nonmetalloid, metallic element and/or oxide.Wherein, the nonmetalloid in doped chemical can select one or more the combination in B, C, N, O and Si; Metallic element in doped chemical can select one or more the combination in Hf, Zr, Al, Nb, Ta, Ru, V, Mo, W and Cr; Oxide comprises Al
2o
3, MgO, ZrO
2, ZnO, HfO
2, SiO
2, TiO
2, Ta
2o
5, V
2o
5, Nd
2o
3, Cr
2o
3(Ba, Sr) TiO
3in one or more combination.Wherein, atomic ratio those skilled in the art of ferromagnetic elements and doped chemical can carry out correspondence adjustment according to actual needs, such as, controls at 55-98% by the atomic percentage conc of ferromagnetic elements, accordingly, the atomic percentage conc of doped chemical is controlled at 2-45%.
In a kind of preferred embodiment of the present invention, nonmagnetic spacer layers 2 can select metal and/or oxide.Wherein, the metal in nonmagnetic spacer layers 2 can select one or more the combination in Ru, Ta, Au, Hf, Cr and Nb; Oxide in nonmagnetic spacer layers 2 can select Al
2o
3, MgO, SiO
2(Ba, Sr) TiO
3in one or more combination.
It is to be noted; in the multilayer film that above-mentioned optical mode ferromagnetic resonance strengthens, the element composition of each tunic is only the concrete element of part cited by the embodiment of the present invention or oxide; but the element of occurring in nature and oxide of a great variety; in embodiments of the present invention can not be exhaustive, then the combination of the element and/or oxide that can meet above-mentioned character in every case all should fall within protection scope of the present invention.
In addition, (ferromagnetic elements is uniformly distributed only exemplarily to list the set-up mode of uniaxial magnetic anisotropy layer in foregoing, doped chemical distribution gradient), and two implementations (being realized by the thickness arranging nonmagnetic spacer layers) of antiferromagnetic coupling between uniaxial magnetic anisotropy layer, but should be understood that, those skilled in the art can adopt alternate manner to prepare uniaxial magnetic anisotropy layer equally and realize the antiferromagnetic coupling between two uniaxial magnetic anisotropy layers, the present invention is not specifically limited this, that is, every have the first uniaxial magnetic anisotropy layer, the trilamellar membrane structure of nonmagnetic spacer layers and the second uniaxial magnetic anisotropy layer, and satisfy condition: two uniaxial magnetic anisotropy layer easy axis are consistent, two uniaxial magnetic anisotropy layer antiferromagnetic coupling, all should fall within protection scope of the present invention.
For the multilayer film that above-mentioned optical mode ferromagnetic resonance strengthens, additionally provide the preparation method of the multilayer film that a kind of optical mode ferromagnetic resonance strengthens in embodiments of the present invention, it adopts vacuum magnetic-control sputtering instrument, and as shown in Figure 7, the method comprises the following steps:
Step S100: sputter the first uniaxial magnetic anisotropy layer 1 on substrate 6;
Fig. 8 is uniaxial magnetic anisotropy layer sputtering schematic diagram in the embodiment of the present invention, as shown in Figure 8, substrate 6 is affixed on round turntable 4, ferromagnetic parent material target 51 (ferromagnetic parent material target 51 is for sputtering ferromagnetic elements) is set, make ferromagnetic parent material target 51 parallel with substrate 6, and the center of ferromagnetic parent material target 51 is relative with the center of substrate 6, then, when round turntable 4 drives substrate 6 uniform rotation, the ferromagnetic elements uniform sputter sputtered by ferromagnetic parent material target 51 is on substrate 6; Doped chemical target 52 (doped chemical target 52 is for sputtering doped chemical) is set, make the center of doped chemical target 52 towards the center 4-10cm away from the direction offset from substrate 6 at round turntable 4 center, and the inclination angle of adjustment doped chemical target 52, make the outside of the central axial alignment substrate 6 of doped chemical target 52, then when round turntable 4 drives substrate 6 uniform rotation, the doped chemical sputtered by doped chemical target 52 along the direction L distribution gradient in Fig. 6 on substrate 6.
In a preferred embodiment, in order to distinguish the anisotropic orientation of the multilayer film that optical mode ferromagnetic resonance strengthens, select strip substrate, strip substrate is affixed on the edge of round turntable 4, and the length direction of strip substrate is along the radial setting of round turntable 4, the direction L in Fig. 8 and the length direction of strip substrate.
At the vacuum pressure of vacuum magnetic-control sputtering device vacuum chamber lower than 5.0 × 10
-6after Torr, pass into Ar gas, flow is 20sccm, and sputtering air pressure is 2.8mTorr; Setting sputtering power and sputtering time, obtain the first uniaxial magnetic anisotropy layer 1 of respective thickness.Wherein, corresponding sputtering power is selected according to the material of ferromagnetic parent material target 51 and doped chemical target 52; Corresponding sputtering time (sputtering time is longer, and the thickness of uniaxial magnetic anisotropy layer is thicker) is selected according to the thickness of uniaxial magnetic anisotropy layer.
Such as, when ferromagnetic parent material target 51 is Fe
0.5co
0.5target, when doped chemical target 52 is B target, be respectively cosputtering under the condition of 80W and 120W at sputtering power, sputtering time 30min, can plate
thick FeCoB ferromagnetic thin film;
When ferromagnetic parent material target 51 is Fe
0.7co
0.3target, when doped chemical target 52 is B target, be respectively cosputtering under the condition of 80W and 150W at sputtering power, sputtering time 800s, can plate
thick FeCoB ferromagnetic thin film;
When ferromagnetic parent material target 51 is Fe
0.5co
0.5target, doped chemical target 52 is Al
2o
3during target, be respectively cosputtering under the condition of 80W and 120W at sputtering power, sputtering time 880s, can plate
thick (Fe
0.5co
0.5)
x(Al
2o
3)
yferromagnetic thin film;
When ferromagnetic parent material target 51 is Fe
0.7co
0.3target, when doped chemical target 52 is Hf target, be respectively cosputtering under the condition of 80W and 60W at sputtering power, sputtering time 1000s, can plate
thick (Fe
0.7co
0.3)
xhf
yferromagnetic thin film.
Step S200: the certain thickness nonmagnetic spacer layers 2 of uniform sputter on described first uniaxial magnetic anisotropy layer 1;
Fig. 9 is that in the embodiment of the present invention, nonmagnetic spacer layers 2 sputters schematic diagram, as shown in Figure 9, nonmagnetic spacer layers sputtering target 53 is set, make nonmagnetic spacer layers sputtering target 53 parallel with substrate 6, and the center of nonmagnetic spacer layers sputtering target 53 is relative with the center of substrate 6, then when round turntable 4 drives substrate 6 uniform rotation, the nonmagnetic spacer layers 2 element uniform sputter sputtered by nonmagnetic spacer layers sputtering target 53 is on the first uniaxial magnetic anisotropy layer 1.
At the vacuum pressure of vacuum magnetic-control sputtering device vacuum chamber lower than 5.0 × 10
-6after Torr, pass into Ar gas, flow is 20sccm, and sputtering air pressure is 2.8mTorr; Setting sputtering power and sputtering time, obtaining thickness is
nonmagnetic spacer layers 2.
Such as, when nonmagnetic spacer layers sputtering target 53 is Ru target, be sputter under the condition of 30W at sputtering power, sputtering time is 30min, can plate
thick Ru nonmagnetic spacer layers 2;
When nonmagnetic spacer layers sputtering target 53 is Ru target, be sputter under the condition of 30W at sputtering power, sputtering time 1min, can plate
thick Ru nonmagnetic spacer layers 2;
When nonmagnetic spacer layers sputtering target 53 is Au target, be sputter under the condition of 20W at sputtering power, sputtering time 1min, can plate
thick Au nonmagnetic spacer layers 2;
When nonmagnetic spacer layers sputtering target 53 is MgO target, be sputter under the condition of 100W at sputtering power, sputtering time 10min, can plate
thick MgO nonmagnetic spacer layers 2.
Step S300: the second uniaxial magnetic anisotropy layer 3 that sputtering is consistent with the easy axis of described first uniaxial magnetic anisotropy layer 1 on described nonmagnetic spacer layers 2, and the thickness of nonmagnetic spacer layers 2 is configured to make to meet antiferromagnetic coupling between described first uniaxial magnetic anisotropy layer 1 and described second uniaxial magnetic anisotropy layer 2.
Adopt the method identical with step S100 in this step, nonmagnetic spacer layers 2 sputters the second uniaxial magnetic anisotropy layer 3, wherein, in this step, the set-up mode of doped chemical target 52 is consistent with step S100, to ensure that the first uniaxial magnetic anisotropy layer 1 is consistent with the easy axis of the second uniaxial magnetic anisotropy layer 3.In addition, the set-up mode of ferromagnetic parent material target 51 and sputtering condition can refer step S100, in order to save length in the embodiment of the present invention, do not repeat them here.
Adopt said method can obtain the multilayer film of corresponding optical mode ferromagnetic resonance enhancing according to different sputtering targets and sputtering condition.Such as, thickness is respectively
with
(Fe
0.7co
0.3)
xb
y/ Ru/ (Fe
0.7co
0.3)
xb
ymultilayer film, under zero magnetic field, it shows optical mode ferromagnetic resonance, and resonance frequency is up to 12GHz, and magnetic permeability is also up to 15; Thickness is respectively
with
(Fe
0.5co
0.5)
x(Al
2o
3)
y/ Au/ (Fe
0.5co
0.5)
x(Al
2o
3)
ymultilayer film, under zero magnetic field, it shows optical mode ferromagnetic resonance, and resonance frequency is up to 10.8GHz, and magnetic permeability is also up to 21; Thickness is respectively
with
(Fe
0.7co
0.3)
xhf
y/ MgO/ (Fe
0.7co
0.3)
xhf
ymultilayer film, under zero magnetic field, it shows optical mode ferromagnetic resonance, and resonance frequency is up to 9.8GHz, and magnetic permeability is also up to 30.
It is more than the multilayer film of several exemplary optical mode ferromagnetic resonance enhancing prepared by multilayer film preparation method that a kind of optical mode ferromagnetic resonance adopting the embodiment of the present invention to provide strengthens; but it should be noted that; the multilayer film adopting the optical mode ferromagnetic resonance prepared by this method to strengthen is not limited to this; those skilled in the art can adjust accordingly to sputtering target and sputtering condition the multilayer film obtaining corresponding optical mode ferromagnetic resonance and strengthen according to actual needs, and it all should fall within protection scope of the present invention.
From above technical scheme, in the multilayer film that a kind of optical mode ferromagnetic resonance that the embodiment of the present invention provides strengthens, the uniaxial magnetic anisotropy of the first uniaxial magnetic anisotropy layer and the second uniaxial magnetic anisotropy layer ensure that two uniaxial magnetic anisotropy layers still can keep along interior magnetisation anisotropy field the ferromagnetic resonance that magnetic loss is less under zero bigoted magnetic field; In addition, the anti-ferromagnetic coupling interaction of the first uniaxial magnetic anisotropy layer and the second uniaxial magnetic anisotropy layer, make the magnetic moment difference effective magnetic field precession in the opposite direction of the two uniaxial magnetic anisotropy layers with identical easy axis on the one hand, thus the optical mode ferromagnetic resonance amplitude of the two-layer uniaxial magnetic anisotropy layer causing position mutually contrary just superposes enhancing, thus improve magnetic permeability; On the other hand, strong antiferromagnetic coupling field is applied on the magnetic moment of precession, and the optical mode resonance frequency of ferromagnetic resonance multilayer film is significantly improved.
It should be noted that, in this article, the such as relational terms of " first " and " second " etc. and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the specific embodiment of the present invention, those skilled in the art is understood or realizes the present invention.To be apparent to one skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. the multilayer film of an optical mode ferromagnetic resonance enhancing, it is characterized in that, comprise the first uniaxial magnetic anisotropy layer, nonmagnetic spacer layers and the second uniaxial magnetic anisotropy layer, described nonmagnetic spacer layers is folded between described first uniaxial magnetic anisotropy layer and described second uniaxial magnetic anisotropy layer, described first uniaxial magnetic anisotropy layer is consistent with the easy axis of described second uniaxial magnetic anisotropy layer, and the thickness of described nonmagnetic spacer layers is configured to make described first uniaxial magnetic anisotropy layer and described second uniaxial magnetic anisotropy layer antiferromagnetic coupling.
2. the multilayer film of optical mode ferromagnetic resonance enhancing according to claim 1, it is characterized in that, described first uniaxial magnetic anisotropy layer is identical with the thickness of described second uniaxial magnetic anisotropy layer.
3. the multilayer film of optical mode ferromagnetic resonance enhancing according to claim 1, it is characterized in that, the thickness of described first uniaxial magnetic anisotropy layer and/or described second uniaxial magnetic anisotropy layer is
4. the multilayer film that the optical mode ferromagnetic resonance according to any one of claim 1-3 strengthens, it is characterized in that, described first uniaxial magnetic anisotropy layer and/or described second uniaxial magnetic anisotropy layer comprise ferromagnetic elements and doped chemical, described ferromagnetic elements is evenly distributed, and described doped chemical is along a direction distribution gradient.
5. the multilayer film of optical mode ferromagnetic resonance enhancing according to claim 4, it is characterized in that, described ferromagnetic elements comprises one or more the combination in Fe, Ni, Co.
6. the multilayer film of optical mode ferromagnetic resonance enhancing according to claim 4, it is characterized in that, described doped chemical comprises the composite component in nonmetalloid, metallic element and/or oxide.
7. the multilayer film of optical mode ferromagnetic resonance enhancing according to claim 6, it is characterized in that, the nonmetalloid in described doped chemical comprises one or more the combination in B, C, N, O, Si; Metallic element in described doped chemical comprises one or more the combination in Hf, Zr, Al, Nb, Ta, Ru, V, Mo, W, Cr; Oxide in described doped chemical comprises Al
2o
3, MgO, ZrO
2, ZnO, HfO
2, SiO
2, TiO
2, Ta
2o
5, V
2o
5, Nd
2o
3, Cr
2o
3, (Ba, Sr) TiO
3in one or more combination.
8. the multilayer film that the optical mode ferromagnetic resonance according to any one of claim 1-3 strengthens, it is characterized in that, described nonmagnetic spacer layers comprises metal and/or oxide.
9. the multilayer film of optical mode ferromagnetic resonance enhancing according to claim 8, it is characterized in that, the metal in described nonmagnetic spacer layers comprises one or more the combination in Ru, Ta, Au, Hf, Cr, Nb; Oxide in described nonmagnetic spacer layers comprises Al
2o
3, MgO, SiO
2in one or more combination.
10. a preparation method for the multilayer film of optical mode ferromagnetic resonance enhancing, adopt vacuum magnetic-control sputtering instrument, it is characterized in that, described method comprises:
Step S100: sputter the first uniaxial magnetic anisotropy layer on substrate;
Step S200: the certain thickness nonmagnetic spacer layers of uniform sputter on described first uniaxial magnetic anisotropy layer;
Step S300: the second uniaxial magnetic anisotropy layer that sputtering is consistent with the easy axis of described first uniaxial magnetic anisotropy layer on described nonmagnetic spacer layers, and the thickness of nonmagnetic spacer layers is configured to make to meet antiferromagnetic coupling between described first uniaxial magnetic anisotropy layer and described second uniaxial magnetic anisotropy layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610024678.2A CN105448463B (en) | 2016-01-14 | 2016-01-14 | A kind of multilayer film of optical mode ferromagnetic resonance enhancing and preparation method thereof |
| CN201711159052.3A CN107895623B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
| CN201711160210.7A CN107895624B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610024678.2A CN105448463B (en) | 2016-01-14 | 2016-01-14 | A kind of multilayer film of optical mode ferromagnetic resonance enhancing and preparation method thereof |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711160210.7A Division CN107895624B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
| CN201711159052.3A Division CN107895623B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105448463A true CN105448463A (en) | 2016-03-30 |
| CN105448463B CN105448463B (en) | 2017-12-22 |
Family
ID=55558549
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711159052.3A Active CN107895623B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
| CN201711160210.7A Active CN107895624B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
| CN201610024678.2A Active CN105448463B (en) | 2016-01-14 | 2016-01-14 | A kind of multilayer film of optical mode ferromagnetic resonance enhancing and preparation method thereof |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711159052.3A Active CN107895623B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
| CN201711160210.7A Active CN107895624B (en) | 2016-01-14 | 2016-01-14 | Multilayer film with enhanced optical mode ferromagnetic resonance |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN107895623B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107587109A (en) * | 2017-08-21 | 2018-01-16 | 华侨大学 | Composite multi-layer membrane structure with high vertical off setting field and big upset field platform |
| US20230111296A1 (en) * | 2021-10-07 | 2023-04-13 | Western Digital Technologies, Inc. | Longitudinal Sensor Bias Structures and Method of Formation Thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101206945A (en) * | 2007-11-20 | 2008-06-25 | 福建师范大学 | Method of preparing multi-component high-frequency thin ferromagnetic film material with component gradient |
| CN103714942A (en) * | 2013-12-27 | 2014-04-09 | 青岛大学 | Self-biased non-homogeneous microwave ferromagnetic thin film material and preparation method thereof |
| CN103956249A (en) * | 2014-04-03 | 2014-07-30 | 中国科学院物理研究所 | Artificial antiferromagnetic coupling multilayer film material with vertical anisotropy |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885181A (en) * | 1981-11-16 | 1983-05-21 | Fujitsu Ltd | Measurement of cubic anisotropy constant k1 for magnetic garnet film |
| US6716488B2 (en) * | 2001-06-22 | 2004-04-06 | Agere Systems Inc. | Ferrite film formation method |
| FR2892871B1 (en) * | 2005-11-02 | 2007-11-23 | Commissariat Energie Atomique | SPEED POLARIZED ELELECTIC CURRENT FREQUENCY RADIO OSCILLATOR |
| CN100452255C (en) * | 2006-03-07 | 2009-01-14 | 中国科学院物理研究所 | Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method |
| CN101471420A (en) * | 2008-07-30 | 2009-07-01 | 电子科技大学 | Double exchange bias field type spinning valve |
| CN103646749B (en) * | 2013-12-27 | 2015-10-14 | 青岛大学 | A kind of quasi-isotropic microwave ferromagnetic multilayer film and preparation method thereof |
-
2016
- 2016-01-14 CN CN201711159052.3A patent/CN107895623B/en active Active
- 2016-01-14 CN CN201711160210.7A patent/CN107895624B/en active Active
- 2016-01-14 CN CN201610024678.2A patent/CN105448463B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101206945A (en) * | 2007-11-20 | 2008-06-25 | 福建师范大学 | Method of preparing multi-component high-frequency thin ferromagnetic film material with component gradient |
| CN103714942A (en) * | 2013-12-27 | 2014-04-09 | 青岛大学 | Self-biased non-homogeneous microwave ferromagnetic thin film material and preparation method thereof |
| CN103956249A (en) * | 2014-04-03 | 2014-07-30 | 中国科学院物理研究所 | Artificial antiferromagnetic coupling multilayer film material with vertical anisotropy |
Non-Patent Citations (2)
| Title |
|---|
| 刘国高等: "《层间交换耦合作用对面内单轴各向异性金属磁性三层膜微波物性的影响》", 《南京师大学报》 * |
| 陈慧余等: "《Fe/[NiFe/C u]30多层膜线列阵的铁磁共振研究》", 《物理学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107587109A (en) * | 2017-08-21 | 2018-01-16 | 华侨大学 | Composite multi-layer membrane structure with high vertical off setting field and big upset field platform |
| CN107587109B (en) * | 2017-08-21 | 2019-06-04 | 华侨大学 | Composite multi-layer membrane structure with high vertical off setting field and big overturning field platform |
| US20230111296A1 (en) * | 2021-10-07 | 2023-04-13 | Western Digital Technologies, Inc. | Longitudinal Sensor Bias Structures and Method of Formation Thereof |
| US11631535B1 (en) * | 2021-10-07 | 2023-04-18 | Western Digital Technologies, Inc. | Longitudinal sensor bias structures and method of formation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107895624B (en) | 2020-01-10 |
| CN107895624A (en) | 2018-04-10 |
| CN107895623B (en) | 2020-06-09 |
| CN107895623A (en) | 2018-04-10 |
| CN105448463B (en) | 2017-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5534355A (en) | Artificial multilayer and method of manufacturing the same | |
| Garcia et al. | Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers | |
| Ding et al. | Tunable perpendicular magnetic anisotropy in GdFeCo amorphous films | |
| US5578385A (en) | Magnetoresistance effect element | |
| CN101285170B (en) | Process for preparing wide-band and wave-absorbing magnetic multilayer membrane | |
| CN106504891B (en) | A kind of preparation method of quasi-isotropic magnetic core film | |
| CN105448463A (en) | Optical mold ferromagnetic resonance enhancing multilayer film and preparation method of optical mold ferromagnetic resonance enhancing multilayer film | |
| CN103646749B (en) | A kind of quasi-isotropic microwave ferromagnetic multilayer film and preparation method thereof | |
| JP2010141301A (en) | Radio frequency device equipped with thin film having high dielectric constant and high magnetic permeability | |
| Li et al. | High In-Plane Magnetic Anisotropy and Microwave Frequency Performance of Soft Magnetic (Fe $ _ {50} $ Co $ _ {50} $) $ _ {1-{\rm x}} $(Al $ _ {2} $ O $ _ {3} $) $ _ {\rm x} $ Films Prepared by Modified Composition Gradient Sputtering | |
| Lan et al. | Giant tunneling magnetoresistance in spin-filter magnetic tunnel junctions based on van der Waals A-type antiferromagnet CrSBr | |
| JP2015041392A (en) | Magnetic material, vertical magnetic recording medium, magnetic storage device, manufacturing method of magnetic material, and manufacturing method of vertical magnetic recording medium | |
| Zhou et al. | Permanent-magnet properties of thermally processed FePt and FePt-Fe multilayer films | |
| CN101834053B (en) | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof | |
| Wang et al. | Tuning perpendicular magnetic properties of sputtered rare-earth transition metal GdFeCo alloy films | |
| Wang et al. | Thermal degradation behavior of amorphous GdFeCo alloy films with perpendicular anisotropy | |
| JP7149055B2 (en) | Ferromagnetic exchange-coupled device and manufacturing method thereof | |
| Xiao et al. | Magnetization reversal in antiferromagnetically coupled [Pt/CoFeB] N1/Ru/[CoFeB/Pt] N2 structures with perpendicular anisotropy | |
| US20190392990A1 (en) | Multilayer Device Having An Improved Antiferromagnetic Pinning Layer And A Corresponding Manufacturing Method | |
| Zhang et al. | Edge-modulated perpendicular magnetic anisotropy in [Co/Pd] n and L1-FePt thin film wires | |
| Milyaev et al. | Degree of perfection of the< 111> texture and the hysteresis of magnetoresistance in MnIr-based top spin valves | |
| Nakano et al. | Annealing effect on interlayer exchange coupling in perpendicularly magnetized synthetic antiferromagnetic structure based on Co/Pd multilayers with ultrathin Ru spacer | |
| Tian et al. | Fabrication of high coercive Nd–Fe–B based thin films through annealing Nd–Fe–B/Nd–Fe multilayers | |
| Singh et al. | Effect of postannealing and multilayer structure on soft magnetic properties of FeTaC thin film | |
| Dey et al. | Shape-dependent switching behavior of exchange-coupled nanomagnet stacks |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 266061 Hongkong East Road, Laoshan District, Shandong, China, No. 7, No. Applicant after: Qingdao University Address before: 266073 Ningxia Road, Shandong, China, No. 308, No. Applicant before: Qingdao University |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |