CN101863152A - Infrared radiation inhibiting material with nano periodic structure and method for preparing same - Google Patents
Infrared radiation inhibiting material with nano periodic structure and method for preparing same Download PDFInfo
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- CN101863152A CN101863152A CN 201010165515 CN201010165515A CN101863152A CN 101863152 A CN101863152 A CN 101863152A CN 201010165515 CN201010165515 CN 201010165515 CN 201010165515 A CN201010165515 A CN 201010165515A CN 101863152 A CN101863152 A CN 101863152A
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Abstract
The invention provides an infrared radiation inhibiting material with a nano periodic structure, which can ensure infrared stealth of covered high-temperature targets and heat-source targets. The technical scheme is that the material comprises a substrate and a membrane material on an upper layer. The material is characterized in that: the membrane material is formed by combining five periods of compound nano germanium-zinc sulfide membranes, and the upper layer of the compound nano germanium-zinc sulfide membrane is the nano zinc sulfide membrane which is 1.1 millimeters thick and the lower layer is the nano germanium membrane which is 0.7 millimeters thick.
Description
Technical field
The present invention relates to military infrared stealth and camouflage field, be specially a kind of infrared radiation inhibiting material with nano periodic structure, the present invention also provides the preparation method of this material.
Background technology
Traditional infrared stealth mainly is to utilize high, medium and low emissivity material to make the appearance profile of military target cut apart distortion to reach stealthy purpose with camouflage.Though this material can play certain effect to the passive target infrared of static state is stealthy, but to high-temperature targets with the thermal source target arranged, as engine of aircraft engine nozzle, naval vessels, tank etc., can't implement infrared stealth effectively, this wherein main cause be that the design preparation of low-emissivity material is the difficult point of infrared stealth always, low-launch-rate can not be accomplished very low level at present.
Summary of the invention
At the problems referred to above, the invention provides a kind of infrared radiation inhibiting material with nano periodic structure, the infrared stealth that it can guarantee the high-temperature targets that is capped and the thermal source target object is arranged.
A kind of infrared radiation inhibiting material with nano periodic structure, its technical scheme is such: it comprises the thin-film material on substrate and upper strata, it is characterized in that: described thin-film material is that the composite Nano germanium and the zinc sulfide film in five cycles is composited mutually, and the upper strata of described composite Nano germanium and zinc sulfide film is that the nano-zinc sulfide film of 1.1mm thickness, lower floor are the nanometer germanium film of 0.7mm thickness.
It is further characterized in that: described substrate is flexible materials such as basic cloth; Described substrate is a hard material.
A kind of preparation method of infrared radiation inhibiting material with nano periodic structure is characterized in that:
Germanium material, substrate are placed vacuum coating equipment inside, vacuum state adopts evaporation coating to plate the nanometer germanium film of 0.7mm thickness down on substrate, remove germanium material afterwards and change zinc sulphide materials, vacuum state adopts evaporation coating to plate the nano-zinc sulfide film of 1.1mm thickness down on germanium film, keep substrate location constant afterwards, under vacuum state, carry out evaporation coating at the upper surface of the substrate of plated film, alternately plate the nano-zinc sulfide film each four times of nanometer germanium film, the 1.1mm thickness of 0.7mm thickness successively.
It is further characterized in that: its concrete processing step is as follows:
A, germanium material and substrate are placed the vacuum chamber of the vacuum coating equipment that does not vacuumize, the gas of vacuum chamber
Be discharged to 10
-4The Torr(holder) following pressure, make its evaporation form nanoparticle more than the heating germanium to 300 ℃,, stop heating afterwards at the substrate surface uniform deposition, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge substrate top surface forms the nanometer germanium film of 0.7mm thickness;
B, the germanium material of vacuum chamber removed change zinc sulphide materials into, substrate location is motionless, and the gas of vacuum chamber is discharged to 10
-4The Torr(holder) following pressure, make its evaporation form nanoparticle more than the baking Zinc material to 300 ℃,, stop heating afterwards at the substrate surface uniform deposition, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge substrate top surface forms the nano-zinc sulfide film of 1.1mm thickness;
C, alternately repeat a and b step each four times successively, form the composite Nano germanium and the zinc sulfide film in five cycles at substrate surface.
It further is characterised in that:
Described substrate material needs to stand lives high temperature more than 300 ℃, the physicochemical property that the heating-up temperature in the described vacuum chamber the is not higher than described substrate minimum temperature between the high-temperature region that changes.
Infrared radiation inhibiting material of the present invention, because it comprises the thin-film material on substrate and upper strata, described thin-film material is that the upper strata in five cycles is nano-zinc sulfide films of 1.1mm thickness, lower floor is that the nanometer germanium film of 0.7mm thickness is composited, it will have the germanium of different refraction coefficients, the zinc sulphide medium is pressed periodic arrangement in the space, and its space periodic and optical wavelength are suitable, because Bragg diffraction, this system will produce forbidden photon band in 8 ~ 14mm wavelength band, if the energy of photon falls in the forbidden photon band spectral region, just can not in medium, propagate, so be covered in the outer surface of high temp objects when this material after, the radiation characteristic of high temp objects outer surface changes, make the emissivity of material in 8 ~ 14mm wavelength band, occur than low value, and the main wave band of existing various Infrared Detectors responses is 8 μ m～14 μ m, using behind this inhibition material can be so that Infrared Detectors can't respond, and then arrives infrared stealth;
Wherein, when substrate is flexible materials such as basic cloth, it can be covered on the object of no solid form such as camouflage net, screening account, when substrate is hard material, it can be covered on the object of solid form, the smoke exhaust pipe of the engine position of motor-driven tank, power station, cave depot engineering for example, the infrared stealth that it can guarantee the high-temperature targets that is capped and the thermal source target object is arranged.
Description of drawings
Fig. 1 is a structural representation enlarged drawing of the present invention.
The specific embodiment
A kind of infrared radiation inhibiting material with nano periodic structure, its structure is seen Fig. 1, it comprises the thin-film material on substrate 1 and upper strata, thin-film material is that the composite Nano germanium and the zinc sulfide film in five cycles is composited mutually, the upper strata of composite Nano germanium and zinc sulfide film is the nano-zinc sulfide film 2 of 1.1mm thickness, the nanometer germanium film 3 that lower floor is 0.7mm thickness, and substrate is flexible material or hard materials such as basic cloth.
A kind of preparation method of infrared radiation inhibiting material with nano periodic structure:
Specific embodiment one: with resistant to elevated temperatures basic cloth as substrate
A, germanium material and basic cloth substrate are placed the vacuum chamber of the vacuum coating equipment that does not vacuumize, the gas of vacuum chamber is discharged to 10
-4The Torr(holder) following pressure, heating germanium to 300 ℃ makes its evaporation form nanoparticle, at the substrate surface uniform deposition, stops heating afterwards, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge basic cloth substrate top surface forms the nanometer germanium film of 0.7mm thickness;
B, the germanium material of vacuum chamber removed change zinc sulphide materials into, basic cloth substrate location is motionless, and the gas of vacuum chamber is discharged to 10
-4The Torr(holder) following pressure, baking Zinc material to 300 ℃ makes its evaporation form nanoparticle, at basic cloth substrate surface uniform deposition, stop heating afterwards, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge basic cloth substrate top surface forms the nano-zinc sulfide film of 1.1mm thickness;
C, alternately repeat a and b step each four times successively, form the composite Nano germanium and the zinc sulfide film in five cycles at basic cloth substrate surface;
Specific embodiment two: with the carborundum hard material as substrate
A, germanium material and carborundum hard material substrate are placed the vacuum chamber of the vacuum coating equipment that does not vacuumize, the gas of vacuum chamber is discharged to 10
-4The Torr(holder) following pressure, heating germanium to 400 ℃ makes its evaporation form nanoparticle, at carborundum hard material substrate surface uniform deposition, stop heating afterwards, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge carborundum hard material substrate top surface forms the nanometer germanium film of 0.7mm thickness;
B, the germanium material of vacuum chamber removed change zinc sulphide materials into, carborundum hard material substrate location is motionless, and the gas of vacuum chamber is discharged to 10
-4The Torr(holder) following pressure, baking Zinc material to 400 ℃ makes its evaporation form nanoparticle, at hard material substrate surface uniform deposition, stop heating afterwards, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge carborundum hard material substrate top surface forms the nano-zinc sulfide film of 1.1mm thickness;
C, alternately repeat a and b step each four times successively, form the composite Nano germanium and the zinc sulfide film in five cycles at carborundum hard material substrate surface.
Claims (6)
1. infrared radiation inhibiting material with nano periodic structure, it comprises the thin-film material on substrate and upper strata, it is characterized in that: described thin-film material is that the composite Nano germanium and the zinc sulfide film in five cycles is composited mutually, and the upper strata of described composite Nano germanium and zinc sulfide film is that the nano-zinc sulfide film of 1.1mm thickness, lower floor are the nanometer germanium film of 0.7mm thickness.
2. a kind of infrared radiation inhibiting material with nano periodic structure according to claim 1 is characterized in that: described substrate is flexible materials such as basic cloth.
3. a kind of infrared radiation inhibiting material with nano periodic structure according to claim 1 is characterized in that: described substrate is a hard material.
4. the preparation method of an infrared radiation inhibiting material with nano periodic structure is characterized in that:
Germanium material, substrate are placed vacuum coating equipment inside, vacuum state adopts evaporation coating to plate the nanometer germanium film of 0.7mm thickness down on substrate, remove germanium material afterwards and change zinc sulphide materials, vacuum state adopts evaporation coating to plate the nano-zinc sulfide film of 1.1mm thickness down on germanium film, keep substrate location constant afterwards, under vacuum state, carry out evaporation coating at the upper surface of the substrate of plated film, alternately plate the nano-zinc sulfide film each four times of nanometer germanium film, the 1.1mm thickness of 0.7mm thickness successively.
5. the preparation method of a kind of infrared radiation inhibiting material with nano periodic structure according to claim 4 is characterized in that:
Its concrete processing step is as follows:
A, germanium material and substrate are placed the vacuum chamber of the vacuum coating equipment that does not vacuumize, the gas of vacuum chamber
Be discharged to 10
-4The Torr(holder) following pressure, make its evaporation form nanoparticle more than the heating germanium to 300 ℃,, stop heating afterwards at the substrate surface uniform deposition, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge substrate top surface forms the nanometer germanium film of 0.7mm thickness;
B, the germanium material of vacuum chamber removed change zinc sulphide materials into, substrate location is motionless, and the gas of vacuum chamber is discharged to 10
-4The Torr(holder) following pressure, make its evaporation form nanoparticle more than the baking Zinc material to 300 ℃,, stop heating afterwards at the substrate surface uniform deposition, naturally after the cooling, guarantee that by the quartz crystal monitoring film thickness gauge substrate top surface forms the nano-zinc sulfide film of 1.1mm thickness;
C, alternately repeat a and b step each four times successively, form the composite Nano germanium and the zinc sulfide film in five cycles at substrate surface.
6. the preparation method of a kind of infrared radiation inhibiting material with nano periodic structure according to claim 4, it is characterized in that: described substrate material needs to stand lives high temperature more than 300 ℃, the physicochemical property that the heating-up temperature in the described vacuum chamber the is not higher than described substrate minimum temperature between the high-temperature region that changes.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103293577A (en) * | 2013-06-21 | 2013-09-11 | 中国科学院上海技术物理研究所 | 4-14.5-micrometer infrared wide-spectrum beam splitting film with ZnSe substrate |
| CN104865618A (en) * | 2015-05-08 | 2015-08-26 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN104865617A (en) * | 2015-05-08 | 2015-08-26 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN104991291A (en) * | 2015-06-26 | 2015-10-21 | 中国人民解放军国防科学技术大学 | Infrared stealth film capable of achieving low emissivity in band range from 8 microns to 14 microns selectively, and preparation method for infrared stealth film |
| CN110345816A (en) * | 2019-07-16 | 2019-10-18 | 四川航龙航空工业有限公司 | A kind of MULTILAYER COMPOSITE camouflage cloth of high thermal inertia |
| CN114924342A (en) * | 2022-03-10 | 2022-08-19 | 电子科技大学 | Selective infrared radiation stealth material and preparation method thereof |
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| CN103293577A (en) * | 2013-06-21 | 2013-09-11 | 中国科学院上海技术物理研究所 | 4-14.5-micrometer infrared wide-spectrum beam splitting film with ZnSe substrate |
| CN104865618A (en) * | 2015-05-08 | 2015-08-26 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN104865617A (en) * | 2015-05-08 | 2015-08-26 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN104865618B (en) * | 2015-05-08 | 2017-04-19 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN104991291A (en) * | 2015-06-26 | 2015-10-21 | 中国人民解放军国防科学技术大学 | Infrared stealth film capable of achieving low emissivity in band range from 8 microns to 14 microns selectively, and preparation method for infrared stealth film |
| CN110345816A (en) * | 2019-07-16 | 2019-10-18 | 四川航龙航空工业有限公司 | A kind of MULTILAYER COMPOSITE camouflage cloth of high thermal inertia |
| CN110345816B (en) * | 2019-07-16 | 2022-04-26 | 四川航龙航空工业有限公司 | Multilayer composite camouflage cloth with high heat inertia |
| CN114924342A (en) * | 2022-03-10 | 2022-08-19 | 电子科技大学 | Selective infrared radiation stealth material and preparation method thereof |
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| CN101863152B (en) | 2012-04-25 |
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Inventor after: Ling Jun Inventor after: Pan Jialiang Inventor after: Yang Hui Inventor after: Zhang Shuanqin Inventor after: Wang Yinlong Inventor after: Lian Changchun Inventor after: Lu Yanli Inventor before: Ling Jun Inventor before: Zhang Shuanqin Inventor before: Yang Hui Inventor before: Wang Yinlong Inventor before: Lian Changchun Inventor before: Lu Yanli Inventor before: Pan Jialiang |
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Free format text: CORRECT: INVENTOR; FROM: LING JUN ZHANG SHUANQIN YANG HUI WANG YINLONG LIAN ZHANGCHUN LU YANLI PAN JIALIANG TO: LING JUN PAN JIALIANG YANG HUI ZHANG SHUANQIN WANG YINLONG LIAN ZHANGCHUN LU YANLI |
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