CN103730540B - A kind of method using pulsed laser deposition to prepare AlSb film solar cell - Google Patents
A kind of method using pulsed laser deposition to prepare AlSb film solar cell Download PDFInfo
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- CN103730540B CN103730540B CN201410009620.1A CN201410009620A CN103730540B CN 103730540 B CN103730540 B CN 103730540B CN 201410009620 A CN201410009620 A CN 201410009620A CN 103730540 B CN103730540 B CN 103730540B
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- Prior art keywords
- alsb
- film solar
- thin film
- solar cell
- target
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- 229910017115 AlSb Inorganic materials 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 8
- 238000004549 pulsed laser deposition Methods 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005204 segregation Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 231100000252 nontoxic Toxicity 0.000 abstract description 3
- 230000003000 nontoxic effect Effects 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 239000007772 electrode material Substances 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to structure design and the technical field of preparation of novel thin film solar cell.Under room temperature, the band gap of AlSb is 1.62eV, is well suited as the absorbed layer of thin film solar cell, and its theoretical conversion efficiencies is up to more than 28%.The ABUNDANT NATUREAL RESOURSES of Al and Sb is nontoxic during producing and using.Therefore, AlSb base solar cell has a good application prospect.But, when AlSb film is directly exposed in air, it is very easy to from deliquescence.Therefore up to now, there is not been reported the AlSb film solar cell of photoelectric transformation efficiency.It is contemplated that use 248nm KrF pulse gas-laser bombardment computer to control to turn multiple compounds material and the electrode material target of target, substrate is sequentially depositing the multilamellar crystalline film without solute segregation, upper back contact is covered immediately after generating AlSb film, the most i.e. cut off and occurred from deliquescence, finally the upper back electrode of deposition, has prepared AlSb base thin film solar battery.
Description
Technical field
The invention belongs to the preparing technical field of novel thin film solaode.
Background technology
Novel thin film solar cell material and device, it has also become the primary study object of area of solar cell.Existing solar cell material, because of problems such as raw-material supply, cost and toxicity, still can not fully meet following cheap, the demand of large-scale use；Therefore, the work seeking new and effective photoelectric conversion material is particularly important.AlSb is the Group III-V compound semiconductor with zincblende lattce structure.Under room temperature, the band gap of AlSb is 1.62eV, has good Spectral matching with visible ray, the light absorbing zone being highly suitable as in solar cell, and theoretical conversion efficiencies is close with CdTe thin film solar cell, may be up to more than 28%.It addition, the ABUNDANT NATUREAL RESOURSES that Al and Sb is on earth, nontoxic during producing and using.Therefore, AlSb based solar battery has a good application prospect.But, preparing of AlSb film is highly difficult, and when it is directly exposed in air, is very easy to from deliquescence.Many workers use thermal evaporation, hot-wall epitaxial method, coevaporation method, magnetron sputtering method etc. to prepare AlSb film, and their character of preliminary study.But, not yet there is people successfully to prepare the AlSb film solar cell device of photoelectric transformation efficiency report.
Summary of the invention
First we propose to use 248nm KrF pulse gas-laser deposition (PLD) technology, preparation AlSb film and solar cell device thereof.In vacuum environment, in this high energy pulse laser bombardment to high-purity AlSb target, the crystalline film consistent with target component can be deposited on substrate over there, there is no solute segregation.Afterwards, take sputter continuously in vacuum chamber to turn target deposition technique, under vacuum conditions, in AlSb film, then deposit back contact, and electrode layer.So, the most disposably complete the preparation of thin film solar cell, solve after AlSb film is exposed to air the most well, easily from the weakness of deliquescence.And then, develop AlSb base thin film solar battery.
Accompanying drawing explanation
Fig. 1 uses pulsed laser deposition to prepare the technical equipment schematic diagram of AlSb base thin film solar battery.In Fig. 1, there are 4 targets, are ZnS, AlSb, NiSb and Ni target respectively.After pulsed laser ablation target, target material surface is released and is deposited film forming on plumage brightness transparent conducting film glass substrate over there.Target can be controlled to turn target by computer program, and then can deposit regular plural layers, or even superlattice film on substrate.
Fig. 2 uses pulsed laser deposition to prepare the technical step schematic diagram of AlSb base thin film solar battery.In Fig. 2, the multiple structure of AlSb base thin film solar battery is made detailed diagram.On FTO electro-conductive glass, first deposit last layer ZnS, then sputtering sedimentation AlSb layer, and then deposition back contact NiSb, the finally upper Ni electrode of deposition.Complete AlSb base film battery to prepare.
Detailed description of the invention
This patent proposes to use 248nm KrF pulsed laser deposition completely first, with room post processing and plated electrode technology, FTO substrate prepares AlSb base thin film solar battery with chamber, the basic structure of its battery is FTO
glass/n-ZnS/p-AlSb/p+NiSb/Ni.This AlSb based thin film solar cell there is not yet the relevant report of photoelectric transformation efficiency.It is contemplated that, succeeding in developing of this nontoxic cheap compound thin film solar cell, abundant problem in science and applied research prospect will be produced.
Prepare as a example by ZnS/AlSb thin film solar cell by PLD method, specifically, first FTO glass is put into vacuum chamber, evacuation；Under the conditions of certain inert atmosphere air pressure and underlayer temperature, use the high-purity target of pulsed laser ablation ZnS, after the certain thickness time, forward the high-purity target of AlSb to；Laser bombardment AlSb target, FTO glass/n-ZnS deposited above go out without the AlSb film of solute segregation；Then target deposition back contacts NiSb layer is turned.So far, it is also possible to AlSb base film is taken out annealing.
Finally, redeposited one layer of back electrode (such as Au, Ni).So, AlSb base novel thin film solar cell just it is prepared as.
Claims (2)
1. utilize the method that pulsed laser deposition (PLD) technology prepares AlSb base thin film solar battery,
It is characterized in that, comprise the following steps:
In vacuum environment, 248nm KrF pulse gas-laser bombardment computer is used to control to turn target
On AlSb target, substrate is sequentially depositing the multilamellar crystalline film without solute segregation, takes at vacuum chamber
Sputter continuously in room turns target deposition technique, under vacuum conditions, deposits back contact in AlSb film
And electrode layer, i.e. prepare AlSb base thin film solar battery；
Described AlSb base thin film solar battery is tied with FTO glass/n-ZnS/p-AlSb/electrode for trunk
Structure.
2. the method for claim 1, is characterized in that using PLD technology, turns target by same room and spatter
Penetrate mode, the time that computer control baffle plate blocks, and then control the thickness of every layer film, prepare AlSb
Base thin film solar battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410009620.1A CN103730540B (en) | 2014-01-09 | 2014-01-09 | A kind of method using pulsed laser deposition to prepare AlSb film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410009620.1A CN103730540B (en) | 2014-01-09 | 2014-01-09 | A kind of method using pulsed laser deposition to prepare AlSb film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103730540A CN103730540A (en) | 2014-04-16 |
| CN103730540B true CN103730540B (en) | 2016-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410009620.1A Expired - Fee Related CN103730540B (en) | 2014-01-09 | 2014-01-09 | A kind of method using pulsed laser deposition to prepare AlSb film solar cell |
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| Country | Link |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105696081B (en) * | 2016-03-23 | 2018-03-30 | 西北工业大学 | The preparation method of aluminium antimonide material |
| CN116544316B (en) * | 2023-07-07 | 2023-09-08 | 四川大学 | Deliquescence inhibition method for AlSb thin-film solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127372A (en) * | 2007-09-17 | 2008-02-20 | 四川大学 | AlSb solar battery structure |
| CN201156545Y (en) * | 2008-01-07 | 2008-11-26 | 四川大学 | Solar cell of aluminum antimonide transparent film |
| CN102931275A (en) * | 2012-10-29 | 2013-02-13 | 四川大学 | Novel thin film solar cell with superlattice structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU1859783A (en) * | 1983-05-23 | 1984-11-29 | Katz, B.B. | Annealing implanted semiconductors by lasers |
| US20070137700A1 (en) * | 2005-12-16 | 2007-06-21 | The Regents Of The University Of California | Development of an electronic device quality aluminum antimonide (AISb) semiconductor for solar cell applications |
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2014
- 2014-01-09 CN CN201410009620.1A patent/CN103730540B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127372A (en) * | 2007-09-17 | 2008-02-20 | 四川大学 | AlSb solar battery structure |
| CN201156545Y (en) * | 2008-01-07 | 2008-11-26 | 四川大学 | Solar cell of aluminum antimonide transparent film |
| CN102931275A (en) * | 2012-10-29 | 2013-02-13 | 四川大学 | Novel thin film solar cell with superlattice structure |
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| CN103730540A (en) | 2014-04-16 |
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