CN101859827A - Light-emitting diode (LED) - Google Patents
Light-emitting diode (LED) Download PDFInfo
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- CN101859827A CN101859827A CN200910131525A CN200910131525A CN101859827A CN 101859827 A CN101859827 A CN 101859827A CN 200910131525 A CN200910131525 A CN 200910131525A CN 200910131525 A CN200910131525 A CN 200910131525A CN 101859827 A CN101859827 A CN 101859827A
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Abstract
The invention discloses a light-emitting diode (LED) which comprises a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, a second electrode and a substrate, wherein the first semiconductor layer comprises a first region and a second region; the light-emitting layer is arranged in the first region of the first semiconductor layer; the second semiconductor layer is arranged on the light-emitting layer; the first electrode is arranged in the second region of the first semiconductor layer; the second electrode is arranged on the second semiconductor layer; the substrate is respectively jointed with the first electrode and the second electrode by using a first metallic lug and a second metallic lug and has a plurality of convex structures, and a plurality of channels are formed on the substrate. The invention can ensure that a supporting layer is attached to the substrate easily. The LED of the invention can also be supported by the supporting layer to reduce the stress generated by the LED.
Description
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
Light-emitting diode (LED Light Emitting Diode) is by the made luminescence component of semi-conducting material, this assembly has two electrode terminals, between terminal, apply voltage, feed minimum electric current, dump energy can be excited with the form of light via the combination in electronics electricity hole and to disengage, this is the basic principle of luminosity of light-emitting diode.Light-emitting diode is different from general incandescent lamp bulb, and light-emitting diode is chemiluminescence, has that power consumption is low, assembly life-span long, need not warm up advantages such as lamp time and reaction speed be fast; Add that its volume is little, vibration resistance, be fit to volume production, demand on the fit applications is made the element of minimum or array easily, light-emitting diode generally is used on the indicating device and display unit of information, communication and consumption electronic products at present, becomes significant components indispensable in the daily life.
But light-emitting diode according to emission wavelength be divided into the See light-emitting diode (wavelength 450～680nm) with can not See light-emitting diode (wavelength 850～1550nm) two big classes.If the epitaxial layer material with its use can be further divided into binary compound (as GaAs, GaSb, GaN etc.), ternary compound (as AlxGal-xAs, AlxGa1-xP, In1-xGaxAs etc.), quaternary compound (as AlInGaP, InAlGaAs, AlxGa1-xAsyP1-y etc.) and GaN based compound four big classes.Distinguish with brightness, light-emitting diode can be divided into high brightness LED and general brightness light-emitting diode two big classes.But, directly weigh light-emitting diode luminosity and there is no the method right area and tell high brightness LED and general brightness light-emitting diode because light-emitting diode has directive property, and each manufacturer's criterion is also inconsistent.Add lumination of light emitting diode brightness, luminous efficiency is directly related with the epitaxial layer material, therefore to use the epitaxial layer material category as the standard of distinguishing high brightness LED, described high brightness LED is meant that with quaternary compound and the made light-emitting diode of GaN based compound general brightness light-emitting diode is meant with binary compound and the made light-emitting diode of ternary compound beyond the GaN system.
Summary of the invention
One of the technical problem to be solved in the present invention provides a kind of light-emitting diode, and supporting layer is attached on the substrate easily.
For solving the problems of the technologies described above, light-emitting diode of the present invention comprises:
One first semiconductor layer comprises a first area and a second area;
One luminescent layer is located at the first area of described first semiconductor layer;
One second semiconductor layer is located at described luminescent layer;
One first electrode is located at the second area of described first semiconductor layer;
One second electrode is located at described second semiconductor layer; And
One substrate, utilize one first metal coupling and one second metal coupling respectively with described first electrode and second electrode engagement, and have plural convex structure, form plural irrigation canals and ditches in described substrate.
Two of the technical problem to be solved in the present invention provides a kind of light-emitting diode, the stress that can effectively reduce light-emitting diode and produced.
For solving the problems of the technologies described above, light-emitting diode of the present invention comprises:
One first semiconductor layer comprises a first area and a second area;
One luminescent layer is located at the first area of described first semiconductor layer;
One second semiconductor layer is located at described luminescent layer;
One first electrode is located at the second area of described first semiconductor layer;
One second electrode is located at described second semiconductor layer;
One substrate utilizes one first metal coupling and one second metal coupling and described first electrode and described second electrode engagement respectively; And
One supporting layer is located between described luminescent layer and the substrate, and coats described luminescent layer, first electrode, second semiconductor layer, second electrode, first metal coupling and second metal coupling, and the material of described supporting layer is an organic material.
Adopt light-emitting diode of the present invention,, form plural irrigation canals and ditches, be convenient to form supporting layer, described supporting layer is attached on the substrate easily in described substrate owing to have plural convex structure on the substrate.
In addition, light-emitting diode of the present invention utilizes support layer supports, can reduce the stress problem that described light-emitting diode produces.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is embodiments of the invention one structural representations;
Fig. 2 is embodiments of the invention two structural representations;
Fig. 3 is substrate embodiment one schematic diagram among the present invention;
Fig. 4 is substrate embodiment two schematic diagrames among the present invention;
Fig. 5 is embodiments of the invention three structural representations;
Fig. 6 is embodiments of the invention four structural representations;
Fig. 7 A is embodiment one schematic diagram in reflector among the present invention;
Fig. 7 B is embodiment two schematic diagrames in reflector among the present invention;
Fig. 8 is embodiments of the invention five structural representations;
Fig. 9 is embodiments of the invention six structural representations;
Figure 10 is embodiments of the invention seven structural representations;
Figure 11 is embodiments of the invention eight structural representations;
Figure 12 is embodiments of the invention nine structural representations;
Figure 13 is embodiments of the invention ten structural representations;
Figure 14 is embodiments of the invention 11 structural representations;
Figure 15 is embodiments of the invention 12 structural representations;
Figure 16 is contact layer embodiment one schematic diagram among the present invention;
Figure 17 is contact layer embodiment two schematic diagrames among the present invention;
Figure 18 A is contact layer embodiment three schematic diagrames among the present invention;
Figure 18 B is contact layer embodiment four schematic diagrames among the present invention;
Figure 19 is embodiments of the invention 13 structural representations;
Figure 20 is embodiments of the invention 14 structural representations.
Symbol description among the figure:
1 is light-emitting diode; 10 is first semiconductor layer; 101 is the first area;
103 is second area; 105 is first anti-reflection structure; 107 is periodic structure;
11 is contact layer; 111 is transparency conducting layer; 113 is dielectric layer;
115 is metal conducting layer; 115a is first metal conducting layer; 1151 is groove;
1151a is a groove; 115b is second metal conducting layer; 117 is adhesion layer;
12 is luminescent layer; 13 is the reflector; 131 is metal level;
1311 is groove; 133 is dielectric layer; 14 is second semiconductor layer;
15 is supporting layer; 141 is second anti-reflection structure; 151 is nanoparticle;
16 is first electrode; 17a is first metal coupling; 17b is second metal coupling;
18 is second electrode; 19 is substrate; 191 is the convex structure;
193 is irrigation canals and ditches; 2 is phosphor powder layer.
Embodiment
Embodiment one.Referring to shown in Figure 1, present embodiment provides a kind of light-emitting diode, and described light-emitting diode 1 comprises one first semiconductor layer 10, a luminescent layer 12, one second semiconductor layer 14, one first electrode 16, one second electrode 18, a substrate 19 and a supporting layer 15.Described first semiconductor layer 10 comprises a first area 101 and a second area 103.Described luminescent layer 12 is located at the first area 101 of described first semiconductor layer 10, described second semiconductor layer 14 is located at the lower surface of luminescent layer 12, described first electrode 16 is located at the lower surface of the second area 103 of described first semiconductor layer 10, and described second electrode 18 is located at the lower surface of second semiconductor layer 14.Described substrate 19 utilizes one first metal coupling 17a and one second metal coupling 17b to engage with described first electrode 16 and described second electrode 18 respectively.Described supporting layer 15 is located between described luminescent layer 12 and the described substrate 19, and coats described luminescent layer 12, first electrode 16, second semiconductor layer 14, second electrode 18, the first metal coupling 17a and the second metal coupling 17b.The material of described supporting layer 15 is an organic material.Described supporting layer 15 can support described light-emitting diode 1, reduces the stress problem that described light-emitting diode 1 is produced.
Embodiment two.Referring to shown in Figure 2, the light-emitting diode 1 that present embodiment provided is to have plural convex structure 191 on the described substrate 19 with light-emitting diode difference shown in Figure 1, and forming plural irrigation canals and ditches 193 in described substrate, more described convex structure 191 can be plural photon crystal structure.So structure helps the formation of described supporting layer 15.Because of supporting layer 15 is a liquid phase, described irrigation canals and ditches 193 increase liquid stream, and supporting layer 15 easily is attached on the described substrate 19.
In conjunction with shown in Figure 3, the convex structure 191 on the described substrate forms irrigation canals and ditches 193 on substrate 19, and the width of each irrigation canals and ditches 193 is all identical.Described convex structure 191 can be strip or bulk, and the height of convex structure 191 is greater than 10nm.Again in conjunction with shown in Figure 4, substrate embodiment two schematic diagrames of the present invention.The width of irrigation canals and ditches 193 that the embodiment of Fig. 3 discloses described substrate 19 is all identical, and the width of irrigation canals and ditches 193 and inequality in the present embodiment.Irrigation canals and ditches 193 comprise two kinds of width in the present embodiment, are respectively width a and width b, and are periodic arrangement, and promptly the width of irrigation canals and ditches 193 is arranged as width a and width b is staggered.It is a kind of of various embodiments that the width of irrigation canals and ditches described in the present embodiment 193 comprises two kinds of width, and the width of described irrigation canals and ditches 193 can comprise more than at least a width.
Embodiment three.As shown in Figure 5, the light-emitting diode 1 that present embodiment provided is with the light-emitting diode difference that embodiment provided of Fig. 1, described supporting layer 15 comprises plural nanoparticle 151, described nanoparticle 151 may be plural fluorescent particles, to change the optical wavelength that described light-emitting diode 1 is produced.The disclosed supporting layer 15 that comprises nanoparticle 151 of present embodiment can be applicable to embodiment shown in Figure 2 two, does not repeat them here.
Embodiment four.As shown in Figure 6, the light-emitting diode 1 that present embodiment provided is with the light-emitting diode difference that embodiment provided of Fig. 1, also be provided with a reflector 13 on the described substrate 19,, promote the luminous efficiency of light-emitting diode 1 to reflect the light that described light-emitting diode 1 is sent.And described reflector 13 can be a metal level or a dielectric layer.The disclosed described reflector 13 of present embodiment can be applicable to Fig. 2 and embodiment shown in Figure 5, does not repeat them here.
In conjunction with embodiment one schematic diagram in reflector of the present invention shown in Fig. 7 A.The disclosed reflector 13 of the embodiment of Fig. 6 can be single metal level or single dielectric layer, and the described reflector 13 of present embodiment comprises a metal level 131 and at least one dielectric layer 133.Described metal level 131 has at least one groove 1311, and described dielectric layer 133 is located in the groove 1311.Please in the lump in conjunction with embodiment two schematic diagrames in reflector of the present invention shown in Fig. 7 B.The disclosed reflector 13 of the embodiment of Fig. 6 can be single metal level or single dielectric layer, and the reflector 13 of present embodiment comprises a metal level 131 and a dielectric layer 133.
Embodiment five.As shown in Figure 8, the light-emitting diode 1 that present embodiment provided is with the light-emitting diode difference that embodiment provided of Fig. 1, described first semiconductor layer 10 upper surfaces are provided with one first anti-reflection structure 105, to increase the light direction of described light-emitting diode 1.And disclosed described first anti-reflection structure 105 of present embodiment can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, does not repeat them here.
Embodiment six.As shown in Figure 9, the light-emitting diode 1 that present embodiment provided is with the light-emitting diode difference that embodiment provided of Fig. 1, described first semiconductor layer 10 upper surfaces are provided with one-period property structure 107, described periodic structure 107 is as photon crystal structure, to promote the luminous efficiency of described light-emitting diode 1.And the disclosed described periodic structure 107 of present embodiment can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, does not repeat them here.
Embodiment seven.As shown in figure 10, present embodiment is combined togather the embodiment of Fig. 8 and Fig. 9.Described first semiconductor layer 10 is provided with one-period property structure 107, described periodic structure 107 is as photon crystal structure, and be provided with one first anti-reflection structure 105 in first semiconductor layer 10 that is provided with described periodic structure 107, to promote the luminous efficiency of described light-emitting diode 1.And disclosed described first semiconductor layer 10 with periodic structure 107 and first anti-reflection structure 105 of present embodiment can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, does not repeat them here.
Embodiment eight.As shown in figure 11, the light-emitting diode 1 that present embodiment provided is that with difference the one side that described second semiconductor layer 14 is provided with second electrode 18 is provided with one second anti-reflection structure 141 with the light-emitting diode that embodiment provided 1 of Fig. 1.Described second anti-reflection structure 141 increasing the light direction of described light-emitting diode 1, and then promotes the luminous efficiency of described light-emitting diode 1 between described second semiconductor layer 14 and second electrode 18.And disclosed described second anti-reflection structure 141 of present embodiment can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, does not repeat them here.
Embodiment nine.As shown in figure 12, present embodiment is combined togather the embodiment of Fig. 8 and Figure 11.Described first semiconductor layer 10 is provided with one first anti-reflection structure 105, the one side that described second semiconductor layer 14 is provided with second electrode 18 is provided with one second anti-reflection structure 141, described second anti-reflection structure 141 is between described second semiconductor layer 14 and second electrode 16, increasing the light direction of described light-emitting diode 1, and then promote the luminous efficiency of described light-emitting diode 1.And disclosed described first anti-reflection structure 105 of present embodiment and described second anti-reflection structure 141 can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, do not repeat them here.
Embodiment ten.As shown in figure 13, present embodiment is combined togather the embodiment of Fig. 9 and Figure 11.Described first semiconductor layer 10 is provided with one-period property structure 107, and described periodic structure 107 can be a photon crystal structure.The one side that is provided with described second electrode 18 in described second semiconductor layer 14 is provided with one second anti-reflection structure 141, described second anti-reflection structure 141 be positioned at described second semiconductor layer 14 and described second electrode 18 between, increasing the light direction of described light-emitting diode 1, and then promote the luminous efficiency of described light-emitting diode 1.And disclosed described periodic structure 107 of present embodiment and described second anti-reflection structure 141 can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, do not repeat them here.
Embodiment 11.As shown in figure 14, the light-emitting diode 1 of present embodiment is combined togather the embodiment of Figure 10 and Figure 11.Described first semiconductor layer 10 is provided with one-period property structure 107, and described periodic structure 107 can be a photon crystal structure.Be provided with one first anti-reflection structure 105 in first semiconductor layer 10 that is provided with described periodic structure 107.The one side that is provided with second electrode 18 at described second semiconductor layer 14 is provided with one second anti-reflection structure 141, described second anti-reflection structure 141 is between described second semiconductor layer 14 and second electrode 18, increasing the light direction of described light-emitting diode 1, and then promote the luminous efficiency of described light-emitting diode 1.And the disclosed described periodic structure 107 of present embodiment, first anti-reflection structure 105 and second anti-reflection structure 141 can be applicable to the embodiment of Fig. 2, Fig. 5 and Fig. 6, do not repeat them here.
Embodiment 12.As shown in figure 15, the light-emitting diode 1 that present embodiment provided is that with the embodiment difference of Fig. 1 be provided with a contact layer 11 between described second semiconductor layer 14 and second electrode 18, described contact layer 11 can be single transparency conducting layer.And the disclosed described contact layer 11 of present embodiment can be applicable to other illustrated embodiment except the embodiment of Fig. 1, does not repeat them here.
Referring to contact layer embodiment one schematic diagram of the present invention shown in Figure 16.The embodiment of Figure 15 discloses described contact layer 11 and is single transparency conducting layer, and the contact layer 11 of present embodiment comprises a transparency conducting layer 111 and a dielectric layer 113, described dielectric layer 113 is a reflector, can reflect the light that described light-emitting diode 1 is produced, to promote the luminous efficiency of described light-emitting diode 1.
Again referring to contact layer embodiment two schematic diagrames of the present invention shown in Figure 17.The contact layer 11 that present embodiment provided is a metal conducting layer 115.
Figure 18 A is contact layer embodiment three schematic diagrames of the present invention.Described contact layer 11 is a metal conducting layer 115, described metal conducting layer 115 comprises one first metal conducting layer 115a and at least one second metal conducting layer 115b again, the described first metal conducting layer 115a has at least one groove 1151a, and the described second metal conducting layer 115b is located in the described groove 1151a.
Figure 18 B is contact layer embodiment four schematic diagrames of the present invention.Described contact layer 11 is a metal conducting layer 115, and described metal conducting layer 115 has at least one groove 1151, and described dielectric layer 113 is located in the described groove 1151, and wherein said dielectric layer 113 is a reflector.
Embodiment 13.As shown in figure 19, the light-emitting diode 1 of present embodiment has contact layer 11.Described contact layer 11 is a metal conducting layer, and this contact layer 11 is easier to be attached to described second semiconductor layer 14 in order to make, and is provided with an adhesion layer 117 between the described contact layer 11 and second semiconductor layer 14.The technology that is provided with adhesion layer 117 between the described contact layer 11 and second semiconductor layer 14 also can be used for embodiment shown in Figure 180, does not repeat them here.
Embodiment 14.As shown in figure 20, the upper surface that present embodiment lies in described first semiconductor layer 10 is provided with a phosphor powder layer 2, to change the optical wavelength of described light-emitting diode 1.And described phosphor powder layer 2 can be located at described first anti-reflection structure 105 (as Fig. 8, Figure 10, Figure 12 or Figure 14), perhaps can be located at described first semiconductor layer (as Fig. 9 or the 13 Figure 13) with periodic structure 107.
From the above, light-emitting diode of the present invention utilizes described support layer supports, to reduce the stress problem that described light-emitting diode is produced.Described in addition substrate has plural convex structure, and forms plural irrigation canals and ditches in described substrate, so that described supporting layer forms easily and is attached on the described substrate.Light-emitting diode of the present invention has the structure that increases light direction, to promote the luminous efficiency of light-emitting diode.Described light-emitting diode also has the reflector, with the reflection light that light-emitting diode was produced, promotes the luminous efficiency of light-emitting diode.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (53)
1. a light-emitting diode is characterized in that, comprising:
One first semiconductor layer comprises a first area and a second area;
One luminescent layer is located at the first area of described first semiconductor layer;
One second semiconductor layer is located at described luminescent layer;
One first electrode is located at the second area of described first semiconductor layer;
One second electrode is located at described second semiconductor layer; And
One substrate, utilize one first metal coupling and one second metal coupling respectively with described first electrode and second electrode engagement, and have plural convex structure, form plural irrigation canals and ditches in described substrate.
2. light-emitting diode as claimed in claim 1 is characterized in that: described convex structure is plural photon crystal structure.
3. light-emitting diode as claimed in claim 1 is characterized in that: described convex structure is respectively strip or bulk.
4. light-emitting diode as claimed in claim 1 is characterized in that: the height of described convex structure is greater than 10nm.
5. light-emitting diode as claimed in claim 1 is characterized in that: the width of described irrigation canals and ditches comprises at least a width, and is periodic arrangement.
6. light-emitting diode as claimed in claim 1 is characterized in that: also comprises,
One supporting layer, be located at described luminescent layer and substrate between, and coat luminescent layer, first electrode, second semiconductor layer, second electrode, first metal coupling and second metal coupling, the material of described supporting layer is an organic material.
7. light-emitting diode as claimed in claim 6 is characterized in that: described supporting layer comprises plural nanoparticle.
8. light-emitting diode as claimed in claim 1 is characterized in that: described substrate is provided with a reflector.
9. light-emitting diode as claimed in claim 8 is characterized in that: described reflector is a metal level.
10. light-emitting diode as claimed in claim 8 is characterized in that: described reflector is a dielectric layer.
11. light-emitting diode as claimed in claim 8 is characterized in that: described reflector comprises a metal level and a dielectric layer.
12. light-emitting diode as claimed in claim 8 is characterized in that: described reflector comprises:
One metal level comprises at least one groove; And
At least one dielectric layer is located in the groove of described metal level.
13. light-emitting diode as claimed in claim 1 is characterized in that: also comprise,
One phosphor powder layer is located on described first semiconductor layer.
14. light-emitting diode as claimed in claim 1 is characterized in that: described first semiconductor layer is provided with one-period property structure.
15. light-emitting diode as claimed in claim 14 is characterized in that: also comprise a phosphor powder layer, be located at first semiconductor layer of described periodic structure.
16. light-emitting diode as claimed in claim 14 is characterized in that: first semiconductor layer that is provided with periodic structure is provided with one first anti-reflection structure.
17. light-emitting diode as claimed in claim 16 is characterized in that: also comprise a phosphor powder layer, be located at described first anti-reflection structure.
18. light-emitting diode as claimed in claim 1 is characterized in that: described first semiconductor layer is provided with one first anti-reflection structure.
19. light-emitting diode as claimed in claim 18 is characterized in that: also comprise a phosphor powder layer, be located at described first anti-reflection structure.
20. as claim 1,16 or 18 described light-emitting diodes, it is characterized in that: the described one side of being located at second electrode of described second semiconductor layer is provided with one second anti-reflection structure.
21. light-emitting diode as claimed in claim 1 is characterized in that: be provided with a contact layer between described second semiconductor layer and second electrode.
22. light-emitting diode as claimed in claim 21 is characterized in that: described contact layer is a transparency conducting layer.
23. light-emitting diode as claimed in claim 21 is characterized in that: described contact layer comprises a transparency conducting layer and a dielectric layer.
24. light-emitting diode as claimed in claim 21 is characterized in that: described contact layer comprises: a metal conducting layer has at least one groove; And at least one dielectric layer, be located at described groove.
25. as claim 23 or 24 described light-emitting diodes, it is characterized in that: described dielectric layer is a reflector.
26. light-emitting diode as claimed in claim 24 is characterized in that: be provided with an adhesion layer between the described contact layer and second semiconductor layer.
27. light-emitting diode as claimed in claim 21 is characterized in that: described contact layer is a metal conducting layer.
28. light-emitting diode as claimed in claim 27 is characterized in that: be provided with an adhesion layer between the described contact layer and second semiconductor layer.
29. as claim 27 or 28 described light-emitting diodes, it is characterized in that: described metal conducting layer comprises:
One first metal conducting layer has at least one groove;
At least one second metal conducting layer is located at described groove.
30. a light-emitting diode is characterized in that: comprise,
One first semiconductor layer comprises a first area and a second area;
One luminescent layer is located at the first area of described first semiconductor layer;
One second semiconductor layer is located at described luminescent layer;
One first electrode is located at the second area of described first semiconductor layer;
One second electrode is located at described second semiconductor layer;
One substrate utilizes one first metal coupling and one second metal coupling and described first electrode and described second electrode engagement respectively; And
One supporting layer is located between described luminescent layer and the substrate, and coats described luminescent layer, first electrode, second semiconductor layer, second electrode, first metal coupling and second metal coupling, and the material of described supporting layer is an organic material.
31. light-emitting diode as claimed in claim 30 is characterized in that: described supporting layer comprises plural nanoparticle.
32. light-emitting diode as claimed in claim 30 is characterized in that: described substrate is provided with a reflector.
33. light-emitting diode as claimed in claim 32 is characterized in that: described reflector is a metal level.
34. light-emitting diode as claimed in claim 32 is characterized in that: described reflector is a dielectric layer.
35. light-emitting diode as claimed in claim 32 is characterized in that: described reflector comprises a metal level and a dielectric layer.
36. light-emitting diode as claimed in claim 32 is characterized in that: described reflector comprises: a metal level comprises at least one groove; And
At least one dielectric layer is located at the groove of described metal level.
37. light-emitting diode as claimed in claim 30 is characterized in that: also comprise a phosphor powder layer, be located at described first semiconductor layer.
38. light-emitting diode as claimed in claim 30 is characterized in that: described first semiconductor layer is provided with one first anti-reflection structure.
39. light-emitting diode as claimed in claim 38 is characterized in that: also comprise a phosphor powder layer, be located at described first anti-reflection structure.
40. light-emitting diode as claimed in claim 30 is characterized in that: described first semiconductor layer is provided with one-period property structure.
41. light-emitting diode as claimed in claim 40 is characterized in that: also comprise a phosphor powder layer, be located at first semiconductor layer of described periodic structure.
42. light-emitting diode as claimed in claim 40 is characterized in that: described first semiconductor layer is provided with one first anti-reflection structure.
43. light-emitting diode as claimed in claim 42 is characterized in that: also comprise a phosphor powder layer, be located at described first anti-reflection structure.
44. as claim 30,38,40 or 42 described light-emitting diodes, it is characterized in that: the one side of described second electrode is provided with one second anti-reflection structure.
45. light-emitting diode as claimed in claim 30 is characterized in that: be provided with a contact layer between described second semiconductor layer and described second electrode.
46. light-emitting diode as claimed in claim 45 is characterized in that: described contact layer is a transparency conducting layer.
47. light-emitting diode as claimed in claim 45 is characterized in that: described contact layer comprises a transparency conducting layer and a dielectric layer.
48. light-emitting diode as claimed in claim 45 is characterized in that: described contact layer comprises: a metal conducting layer has at least one groove; And at least one dielectric layer, be located at described groove.
49. as claim 47 or 48 described light-emitting diodes, it is characterized in that: described dielectric layer is a reflector.
50. light-emitting diode as claimed in claim 48 is characterized in that: be provided with an adhesion layer between the described contact layer and second semiconductor layer.
51. light-emitting diode as claimed in claim 45 is characterized in that: described contact layer is a metal conducting layer.
52. light-emitting diode as claimed in claim 51 is characterized in that: be provided with an adhesion layer between the described contact layer and second semiconductor layer.
53. as claim 51 or 52 described light-emitting diodes, it is characterized in that described metal conducting layer comprises: one first metal conducting layer has at least one groove; And at least one second metal conducting layer, be located at described groove.
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| CN200910131525A CN101859827A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) |
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| CN200910131525A CN101859827A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) |
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| CN102593299A (en) * | 2011-01-17 | 2012-07-18 | 隆达电子股份有限公司 | Solid-state light-emitting element with mesh channel and manufacturing method thereof |
| CN102593299B (en) * | 2011-01-17 | 2016-12-14 | 隆达电子股份有限公司 | Solid-state light-emitting element with mesh channel and manufacturing method thereof |
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