CN101859797A - Deep slot power semiconductor field effect transistor - Google Patents
Deep slot power semiconductor field effect transistor Download PDFInfo
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- CN101859797A CN101859797A CN201010179760A CN201010179760A CN101859797A CN 101859797 A CN101859797 A CN 101859797A CN 201010179760 A CN201010179760 A CN 201010179760A CN 201010179760 A CN201010179760 A CN 201010179760A CN 101859797 A CN101859797 A CN 101859797A
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Abstract
The invention provides a deep slot power semiconductor field effect transistor comprising a drain region (201), an oxide layer (201), a channel region (203), a gate electrode (204), a source electrode (205), an n+ numbered layer (206), a splitting electrode (207) and a drift region (208), wherein the drift region is an n-type drift region, two sides of the n-type drift region are provided with an n+layer (206), and the source electrode (205) and the gate electrode (204) above the splitting electrode (207) are alternately arranged breadthwise. The invention adds the n+layer in the n-type drift region, and the source electrode and the gate electrode above the splitting electrode are alternately arranged breadthwise; on the premise of keeping the resistance to pressure of the device, the invention also gives consideration to the requirement of lowering drain-source conducting resistance. The invention is compatible with common MOSFET technology, has strong actionability and better satisfies the application requirements of power electronic systems.
Description
Technical field
The present invention relates to a kind of longitudinal metal oxide semiconductor field effect transistor (Vertical MOSFET), relate to a kind of deep-groove power MOS FET specifically.
Background technology
In field of power electronics, power MOSFET is widely used in the switching device structure.In order to allow the function of switch device obtain good performance, power MOSFET need satisfy two requirements: 1, be in conducting state when device, can have low-down conducting resistance, minimize the power loss of device itself; 2, be in off state when device, can have sufficiently high reverse breakdown voltage.Yung C.Liang proposes a kind of new device that substitutes super knot (SuperJunction) in low pressure range, be called oblique side oxygen modulation (Gradient Oxide-Bypassed, be abbreviated as GOB) structure devices (Yn Chen, Yung C.Liang and G.S.Samudra:IEEE Transactions on Power Electronics22 (4) 2007).The GOB structure will be difficult to the impurity concentration matching problem of realization in super knot, be converted on the oxidated layer thickness of easy control.
The idea of GOB is on the vertical direction of device, utilize side oxygen modulated structure that the electric field of device drift region is laterally modulated, make the electric field energy in the drift region access approximate consistent the distribution, therefore puncture voltage is greatly improved, and the doping content of drift region can increase, and be similar to drift region concentration in the super knot, thereby reduce the conducting resistance under the break-over of device state.But the side oxide structure area occupied of GOB structure is bigger, and the current lead-through to device is not contributed under the device opening, has directly limited the performance of device performance.
Fig. 1 has provided the transistorized structure of a kind of existing GOB UMOS, comprises drain region 101, oxide layer 102, channel region 103, gate electrode 104, source electrode 105, drift region 106.
Summary of the invention
The object of the present invention is to provide a kind of very strong exploitativeness that has, the easier deep slot power semiconductor field effect transistor that satisfies the application requirements of power electronic system.
The object of the present invention is achieved like this:
Comprise drain region 201, oxide layer 202, channel region 203, gate electrode 204, source electrode 205, n+ layer 206, division electrode 207, drift region 208; Both sides in n type drift region are provided with n+ layer 206, and the source electrode 205 and the gate electrode 204 of division electrode 207 tops are alternately arranged in the horizontal.
Division electrode (207) can be single long column structure, can be the notch cuttype structure, also can be down the narrow wide wedge structure that gets of, and perhaps other is to the tangible electrode plate structure of MOSFET drift region electric field modulation effect.
Deep-groove power MOS FET of the present invention can be by the doping content and the physical dimension of n+ layer 206 in the optimal design drift region 208, the physical dimension of the gate electrode 205 of division electrode 207 tops.The gate electrode 204 of 208 tops, drift region and the gate electrode 204 that divides electrode 207 tops, channel region 203 together constitutes the double channel structure, drain-source current density when having increased MOSFET device forward conduction, and the phenomenon of having avoided drain-source current to distribute in raceway groove too and to concentrate has strengthened the stability of device.During at forward conduction, the n+ layer 206 of the both sides of drift region 208 is similar to the carrier accumulation layer, has reduced the conducting resistance of the drift region 208 of device at the MOSFET device.With respect to the parasitic capacitance effect of device, therefore divide the source electrode 205 and the gate electrode 204 of electrode 207 tops and alternately arrange in the horizontal.
The present invention is by adding the n+ layer in n type drift region, the source electrode and the gate electrode of division electrode top are alternately arranged in the horizontal, under the prerequisite of not sacrificing device withstand voltage, take into account the requirement that reduces leakage-source conducting resistance simultaneously.The present invention and conventional MOSFET process compatible have very strong exploitativeness, the easier application requirements that satisfies power electronic system.
Description of drawings
Fig. 1 is a kind of existing GOB UMOS transistor arrangement schematic diagram;
Fig. 2 is a deep-groove power MOS FET structural representation of the present invention;
Fig. 3 is a deep-groove power MOS FET forward conduction CURRENT DISTRIBUTION schematic diagram of the present invention.
Embodiment
For example the present invention is done description in more detail below in conjunction with accompanying drawing:
With reference to Fig. 2, deep-groove power MOS FET of the present invention.Comprise drain region 201, oxide layer 202, channel region 203, gate electrode 204, source electrode 205, n+ layer 206, division electrode 207, drift region 208.The both sides that it is characterized in that n type drift region have added the n+ layer, and the source electrode 205 and the gate electrode 204 of division electrode 207 tops are alternately arranged in the horizontal.According to the requirement of the concrete on state characteristic of device, breakdown characteristics, the thickness of the oxide layer 202 between the thickness, gate electrode 204 of determining the oxide layer 202 between n+ layer 206, source electrode 205 and the division electrode 207 and the division electrode 207 and divide electrode 20) etc. structural parameters.
Device of the present invention is when oppositely turn-offing, and division electrode 207 structures are modulated the Electric Field Distribution of device drift region, makes drift region inner field intensity APPROXIMATE DISTRIBUTION unanimity; Under the situation of forward conduction, the gate electrode 204 of 208 tops, drift region and the gate electrode 204 that divides electrode 207 tops, channel region 203 together constitutes the double channel structure, as shown in Figure 3, drain-source current density when this structure has increased MOSFET device forward conduction, and the phenomenon of having avoided drain-source current to distribute in raceway groove too and to concentrate has strengthened the stability of device.With respect to the parasitic capacitance effect of device, therefore divide the source electrode 205 and the gate electrode 204 of electrode 207 tops and alternately arrange in the horizontal.The n+ layer 206 of the both sides of drift region 208 is similar to the carrier accumulation layer, and the concentration of n+ layer 206 and thickness directly have influence on the conducting resistance of device and the critical disruptive field intensity of drift region 208 edges, therefore suitable n+ layer 206 structural parameters can reduce the feature conducting resistance of device on the basis that guarantees puncture voltage.
Above-mentioned for the present invention especially exemplified by embodiment, be not in order to limit the present invention.Deep-groove power MOS FET structure provided by the invention is equally applicable to low high-voltage diode, VDMOS, IGBT, GTO, GCT etc. vertically power semiconductor and their variant.Do not breaking away from the spirit and scope of the invention, can do a little adjustment and optimization, protection scope of the present invention is as the criterion with claim.
Claims (4)
1. a deep slot power semiconductor field effect transistor comprises drain region (201), oxide layer (202), channel region (203), gate electrode (204), source electrode (205), n+ layer (206), division electrode (207), drift region (208); It is characterized in that: described drift region is n type drift region, is provided with n+ layer (206) in the both sides of n type drift region, and the source electrode (205) of division electrode (207) top and gate electrode (204) alternately arrangement in the horizontal.
2. deep slot power semiconductor field effect transistor according to claim 1 is characterized in that: described division electrode (207) is single long column structure.
3. deep slot power semiconductor field effect transistor according to claim 1 is characterized in that: described division electrode (207) is the notch cuttype structure.
4. deep slot power semiconductor field effect transistor according to claim 1 is characterized in that: described division electrode (207) is the narrow down wide wedge structure that gets of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101797605A CN101859797B (en) | 2010-05-24 | 2010-05-24 | Deep slot power semiconductor field effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101797605A CN101859797B (en) | 2010-05-24 | 2010-05-24 | Deep slot power semiconductor field effect transistor |
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| CN101859797A true CN101859797A (en) | 2010-10-13 |
| CN101859797B CN101859797B (en) | 2012-01-04 |
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| CN2010101797605A Expired - Fee Related CN101859797B (en) | 2010-05-24 | 2010-05-24 | Deep slot power semiconductor field effect transistor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148256A (en) * | 2011-03-21 | 2011-08-10 | 哈尔滨工程大学 | Grid enhanced-power semiconductor field effect transistor |
| CN107785433A (en) * | 2017-09-19 | 2018-03-09 | 西安电子科技大学 | A kind of ladder high-K dielectric layer wide band gap semiconducter vertical double-diffused MOS FET |
| CN107799600A (en) * | 2017-09-19 | 2018-03-13 | 西安电子科技大学 | A kind of ladder high-K dielectric layer element vertical double-diffused MOS FET |
| CN110098124A (en) * | 2018-01-30 | 2019-08-06 | 美格纳半导体有限公司 | Power semiconductor and method for manufacturing power semiconductor |
-
2010
- 2010-05-24 CN CN2010101797605A patent/CN101859797B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148256A (en) * | 2011-03-21 | 2011-08-10 | 哈尔滨工程大学 | Grid enhanced-power semiconductor field effect transistor |
| CN102148256B (en) * | 2011-03-21 | 2013-03-06 | 哈尔滨工程大学 | Grid enhanced-power semiconductor field effect transistor |
| CN107785433A (en) * | 2017-09-19 | 2018-03-09 | 西安电子科技大学 | A kind of ladder high-K dielectric layer wide band gap semiconducter vertical double-diffused MOS FET |
| CN107799600A (en) * | 2017-09-19 | 2018-03-13 | 西安电子科技大学 | A kind of ladder high-K dielectric layer element vertical double-diffused MOS FET |
| CN107799600B (en) * | 2017-09-19 | 2020-05-01 | 西安电子科技大学 | Stepped high-K dielectric layer element longitudinal double-diffusion metal oxide semiconductor field effect transistor |
| CN107785433B (en) * | 2017-09-19 | 2020-05-01 | 西安电子科技大学 | Stepped high-K dielectric layer wide band gap semiconductor longitudinal double-diffusion metal oxide semiconductor field effect transistor |
| CN110098124A (en) * | 2018-01-30 | 2019-08-06 | 美格纳半导体有限公司 | Power semiconductor and method for manufacturing power semiconductor |
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| Publication number | Publication date |
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| CN101859797B (en) | 2012-01-04 |
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