CN101859542A - Organic light emitting diode display device and organic light emitting diode pixel circuit thereof - Google Patents
Organic light emitting diode display device and organic light emitting diode pixel circuit thereof Download PDFInfo
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Abstract
The invention relates to an organic light emitting diode display device and an organic light emitting diode pixel circuit thereof. The pixel circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor and an organic light emitting diode, wherein one of source/drain electrodes of the first transistor is suitable for receiving display data, and the other source/drain electrode is coupled with one of source/drain electrodes of the fourth transistor and is coupled with a grid electrode of the second transistor and one of source/drain electrodes of the third transistor through the capacitor; one of source/drain electrodes of the second transistor is coupled with the other source/drain electrodes of the third transistor and the fourth transistor and is coupled with one of source/drain electrodes of the fifth transistor; the other source/drain electrode of the fifth transistor is coupled with a first power supply voltage; the anode and the cathode of the organic light emitting diode are respectively coupled with the other source/drain electrode of the second transistor and a second power supply voltage; and the second power supply voltage is smaller than the first power supply voltage.
Description
Technical field
The present invention is a kind of display technique relevant for Organic Light Emitting Diode, and particularly relevant for a kind of organic LED display device and organic light-emitting diode pixel circuit thereof.
Background technology
(Organic Light Emitting Diode, OLED) panel is to be used as light-emitting component with Organic Light Emitting Diode to Organic Light Emitting Diode.And Organic Light Emitting Diode is a kind of element that is driven by electric current, and its luminosity can change along with the electric current by Organic Light Emitting Diode.Therefore, the electric current of how controlling accurately by Organic Light Emitting Diode becomes the developing important topic of organic electroluminescence panel then.
Please refer to Fig. 1, it is the synoptic diagram of existing organic LED display device.This organic LED display device 100 includes scan drive circuit 110, data drive circuit 120, supply voltage supply circuit 130 and display panel 140.And display panel 140 includes multi-strip scanning line (as indicating shown in 142), many data lines (as indicating shown in 144), lead 146 and a plurality of pixels (as indicating shown in 148).Each pixel 148 is made up of transistor 148-1, transistor 148-2, electric capacity 148-3 and Organic Light Emitting Diode 148-4.Wherein, transistor 148-1 and 148-2 all realize with the N transistor npn npn, for example are all to realize with N type thin film transistor (TFT) (N-type Thin-Film Transistor, N-type TFT).And the OVSS shown in the figure is referential supply voltage, for example is earthing potential.In general, transistor 148-1 is to be called switching transistor at such image element circuit framework, and transistor 148-2 then is to be called driving transistors at such image element circuit framework.
In framework shown in Figure 1, transistor 148-2 in each pixel 148 all sees through lead 146 and receives the supply voltage OVDD that supply voltage supply circuit 130 is provided, and the negative electrode of the Organic Light Emitting Diode 148-4 in each pixel 148 all couples referential supply voltage OVSS.And the voltage of the video data that data line 144 is transmitted will pass through the size of current of Organic Light Emitting Diode 148-4 with the common influence of the potential difference (PD) of supply voltage OVDD and OVSS, controls the brightness of Organic Light Emitting Diode 148-4 by this.
Yet, owing to the transistor in above-mentioned these pixels 148 all can have different critical voltage (Threshold Voltage) variation because of the difference on the manufacturing process, also can cause different critical voltage variation because long-time operation causes the critical voltage drift, make and cause the brightness of these pixels 148 inconsistent, and then cause the brightness of display frame uneven phenomenon to occur by the size of current of each Organic Light Emitting Diode 148-4 is inconsistent.
In addition,, make the internal resistance of Organic Light Emitting Diode 148-4 rise, further make the cross-pressure of Organic Light Emitting Diode 148-4 rise along with wearing out of Organic Light Emitting Diode 148-4.And the rising of the cross-pressure of Organic Light Emitting Diode 148-4, will force drain electrode-source voltage of transistor 148-2 (being driving transistors) (is V
DS) diminish.And because the size of current by transistor 148-2 is the V with transistor 148-2
DSTherefore voltage is directly proportional, at the V of transistor 148-2
DSUnder the situation of voltage decreases, the electric current by transistor 148-2 also can diminish, and further makes the brightness step-down of Organic Light Emitting Diode 148-4.Thus, because the catabiosis of Organic Light Emitting Diode 148-4 can reduce the brightness of Organic Light Emitting Diode 148-4, cause display frame the phenomenon of brightness irregularities to occur.These brightness irregularities are now as being so-called dent (Image Sticking) phenomenon.
By as can be known above-mentioned, this organic light-emitting diode pixel circuit shown in the pixel 148 can cause display frame the phenomenon of brightness irregularities to occur because of transistorized critical voltage variation, also can cause display frame the phenomenon of brightness irregularities to occur because of the aging of Organic Light Emitting Diode.
Summary of the invention
Purpose of the present invention is providing a kind of organic light-emitting diode pixel circuit exactly, and it can improve the aging brightness irregularities phenomenon that causes display frame because of transistorized critical voltage variation and Organic Light Emitting Diode.
Another object of the present invention is exactly that a kind of organic LED display device that adopts above-mentioned organic light-emitting diode pixel circuit is being provided.
The present invention proposes a kind of organic light-emitting diode pixel circuit, and it includes the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, electric capacity and Organic Light Emitting Diode.Described the first transistor has first grid, first source/drain electrode and second source/drain electrode, and first source/drain electrode is applicable to the reception video data.Described electric capacity has first end and second end, and first end couples second source/drain electrode.Described transistor seconds has second grid, the 3rd source/drain electrode and the 4th source/drain electrode, and second end of second grid coupling capacitance.Described the 3rd transistor has the 3rd grid, the 5th source/drain electrode and the 6th source/drain electrode, and the 5th source/drain electrode couples second grid, and the 6th source/drain electrode couples the 3rd source/drain electrode.Described the 4th transistor has the 4th grid, the 7th source/drain electrode and the 8th source/drain electrode, and the 7th source/drain electrode couples second source/drain electrode, and the 8th source/drain electrode couples the 3rd source/drain electrode.Described the 5th transistor has the 5th grid, the 9th source/drain electrode and the tenth source/drain electrode, and the 9th source/drain electrode couples first supply voltage, and the tenth source/drain electrode couples the 3rd source/drain electrode.The anode of described Organic Light Emitting Diode and negative electrode couple the 4th source/drain electrode and second source voltage respectively.Wherein, second source voltage is less than first supply voltage.
Preferred embodiment according to above-mentioned organic light-emitting diode pixel circuit is described, in between precharge phase, the first transistor, the 3rd transistor AND gate the 5th transistor present conducting according to its signal separately, and the 4th transistor then presents according to its signal closes; During writing, the first transistor and the 3rd transistor present conducting according to its signal separately, and the 4th transistor AND gate the 5th transistor then presents according to its signal separately closes; In between light emission period, the first transistor and the 3rd transistor present according to its signal separately closes, and the 4th transistor AND gate the 5th transistor then presents conducting according to its signal separately.Wherein, during writing between precharge phase after, and between light emission period during writing after.
The present invention also proposes a kind of organic LED display device, and it includes display panel, data drive circuit and scan drive circuit.Described display panel has a kind of image element circuit, and this image element circuit includes the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, electric capacity and Organic Light Emitting Diode.Described the first transistor has first grid, first source/drain electrode and second source/drain electrode, and first source/drain electrode is applicable to the reception video data.Described electric capacity has first end and second end, and first end couples second source/drain electrode.Described transistor seconds has second grid, the 3rd source/drain electrode and the 4th source/drain electrode, and second end of second grid coupling capacitance.Described the 3rd transistor has the 3rd grid, the 5th source/drain electrode and the 6th source/drain electrode, and the 5th source/drain electrode couples second grid, and the 6th source/drain electrode couples the 3rd source/drain electrode.Described the 4th transistor has the 4th grid, the 7th source/drain electrode and the 8th source/drain electrode, and the 7th source/drain electrode couples second source/drain electrode, and the 8th source/drain electrode couples the 3rd source/drain electrode.Described the 5th transistor has the 5th grid, the 9th source/drain electrode and the tenth source/drain electrode, and the 9th source/drain electrode couples first supply voltage, and the tenth source/drain electrode couples the 3rd source/drain electrode.The anode of described Organic Light Emitting Diode and negative electrode couple the 4th source/drain electrode and second source voltage respectively.Wherein, second source voltage is less than first supply voltage.Described data drive circuit is in order to provide video data.As for described scan drive circuit, it couples first grid, the 3rd grid, the 4th grid and the 5th grid, in between precharge phase, control the first transistor, the 3rd transistor AND gate the 5th transistor turns, and control the 4th transistor and close, and in during writing, control the first transistor and the 3rd transistor turns, and control the 4th transistor AND gate the 5th transistor and close, also close, and control the 4th transistor AND gate the 5th transistor turns in order to control the first transistor and the 3rd transistor between light emission period.Wherein, during writing between precharge phase after, and between light emission period during writing after.
The present invention adopts five transistors, an electric capacity and an Organic Light Emitting Diode to make organic light-emitting diode pixel circuit.See through the special relation of coupling of above-mentioned these members and the circuit characteristic that each transistorized specific conducting sequential is produced, can make to have nothing to do, and can be directly proportional with the cross-pressure of Organic Light Emitting Diode itself by the size of current of Organic Light Emitting Diode by the size of current of Organic Light Emitting Diode and the critical voltage of driving transistors.Therefore, the brightness of Organic Light Emitting Diode and the critical voltage of driving transistors are irrelevant, thereby can make the brightness unanimity of each pixel.In addition, even if Organic Light Emitting Diode is aging and make the cross-pressure of Organic Light Emitting Diode rise, the size of current by Organic Light Emitting Diode also can improve along with the rising degree of cross-pressure.In other words, the size of current by Organic Light Emitting Diode can improve along with the degree of aging of Organic Light Emitting Diode.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated by the raising of above-mentioned size of current, and then can improve because of the aging dent phenomenon that is caused of Organic Light Emitting Diode.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the synoptic diagram of existing organic LED display device.
Fig. 2 illustrates the organic light-emitting diode pixel circuit according to one embodiment of the invention.
Fig. 3 illustrates the signal sequence of video data, enable signal, sweep signal and the inversion signal thereof of Fig. 2.
The circuit state of the organic light-emitting diode pixel circuit that Fig. 4 illustrates Fig. 2 between precharge phase the time.
The circuit state of the organic light-emitting diode pixel circuit that Fig. 5 illustrates Fig. 2 during writing the time.
The circuit state of the organic light-emitting diode pixel circuit that Fig. 6 illustrates Fig. 2 between light emission period the time.
Fig. 7 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.
Fig. 8 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.
Fig. 9 is the synoptic diagram according to the organic LED display device of one embodiment of the invention.
Drawing reference numeral:
100,900: organic LED display device
110,910: scan drive circuit
120,920: data drive circuit
130,930: the supply voltage supply circuit
140,940: display panel
142,942-2: sweep trace
144,944: data line
146,946: lead
148,948: pixel
148-1,148-2: transistor
148-3: electric capacity
148-4: Organic Light Emitting Diode
200,700,800: organic light-emitting diode pixel circuit
202,204,208,210,214: transistor
206: electric capacity
212: Organic Light Emitting Diode
The 942-1:EM signal wire
942-3: inversion signal line
E: between light emission period
EM: enable signal
G
n: sweep signal
OVDD: supply voltage
OVSS: referential supply voltage
P: between precharge phase
V
DATA: video data
W: during writing
XG
n: sweep signal G
nInversion signal
Embodiment
First embodiment:
Please refer to Fig. 2, it illustrates the organic light-emitting diode pixel circuit according to one embodiment of the invention.This organic light-emitting diode pixel circuit 200 is made up of with transistor 214 transistor 202, transistor 204, electric capacity 206, transistor 208, transistor 210 (being driving transistors), Organic Light Emitting Diode 212.In this example, five above-mentioned transistors are all realized with a N transistor npn npn, for example are all to realize with a N type thin film transistor (TFT).
OVDD shown in Figure 2 is the supply voltage that supply voltage supply circuit (not illustrating) is provided.And the OVSS shown in the figure, it is referential supply voltage, for example is earthing potential.In the nature of things, supply voltage OVDD is greater than supply voltage OVSS.In addition, a wherein source/drain electrode of transistor 202 is applicable to and receives video data V
DATAAnd the grid of transistor 202 and 204 is all in order to receive sweep signal G
n, wherein n is a natural number, and G
nRepresent the sweep signal that n bar sweep trace is transmitted.The grid of transistor 208 is in order to receive enable signal EM.As for the grid of transistor 214 then in order to receive sweep signal G
nInversion signal XG
n
Fig. 3 illustrates the video data V of Fig. 2
DATA, enable signal EM, sweep signal G
nAnd inversion signal XG
nSignal sequence.Please according to the explanation needs and with reference to Fig. 3 and Fig. 2.In the precharge period P, sweep signal G
nBe high levle (High), sweep signal G
nInversion signal XG
nBe low level (Low), and enable signal EM is a high levle.Because sweep signal G
nEM is all high levle with enable signal, so transistor 202,204 and 208 is all conducting (Turn on).And because sweep signal G
nInversion signal XG
nBe low level, so transistor 214 is for closing (Turn off).The circuit state of this moment can be represented by Fig. 4.Fig. 4 illustrates the circuit state of organic light-emitting diode pixel circuit when the precharge period P of Fig. 2.Please refer to Fig. 4, the big I of cross-pressure of the voltage swing of contact G and electric capacity 206 is represented by following formula (1) and formula (2) respectively at this moment:
V
G＝OVDD ……(1)
C
ST＝OVDD-V
DATA ……(2)
Wherein, V
GBe expressed as the voltage swing of contact G, the grid voltage size of transistor 210 just, and C
STThen be expressed as the cross-pressure size of electric capacity 206.
Referring again to Fig. 3.Then, during writing among the W, sweep signal G
nStill remain on high levle, sweep signal G
nInversion signal XG
nAlso remain on low level, enable signal EM then changes low level into.Therefore, organic light-emitting diode pixel circuit 200 can change circuit state shown in Figure 5 into by circuit state shown in Figure 4.The organic light-emitting diode pixel circuit that Fig. 5 illustrates Fig. 2 is the circuit state during W during writing.Please according to the explanation needs and with reference to Fig. 5 and Fig. 3.At this moment, because sweep signal G
nBe high levle, so transistor 202 and 204 is all conducting.And because enable signal EM and sweep signal G
nInversion signal XG
nBe all low level, so transistor 208 and 214 is all and closes.The big I of cross-pressure of the voltage swing of contact G and electric capacity 206 is represented by following formula (3) and formula (4) respectively at this moment:
V
G＝V
S0+V
th ……(3)
C
ST＝V
S0+V
th-V
DATA ……(4)
Wherein, V
S0Be expressed as contact S in the voltage swing of this moment, just the source electrode of transistor 210 is in the voltage swing of this moment, and V
ThThen be expressed as the critical voltage of transistor 210.
Referring again to Fig. 3.Next, between light emission period among the E, sweep signal G
nChange low level into, sweep signal G
nInversion signal XG
nChange high levle into, and enable signal EM also changes high levle into.Therefore, organic light-emitting diode pixel circuit 200 can change circuit state shown in Figure 6 into by circuit state shown in Figure 5.The organic light-emitting diode pixel circuit that Fig. 6 illustrates Fig. 2 is the circuit state during E between light emission period.Please according to the explanation needs and with reference to Fig. 6 and Fig. 3.At this moment, because sweep signal G
nBe low level, so transistor 202 and 204 is all and closes.And because enable signal EM and sweep signal G
nInversion signal XG
nBe all high levle, so transistor 208 and 214 is all conducting.This moment, the grid-source voltage of transistor 210 (was V
GSVoltage) big I is represented by following formula (5):
V
GS＝OVDD+V
S0+V
th-V
DATA-V
S ……(5)
Wherein, V
SBe expressed as contact S in the voltage swing of this moment, just the source electrode of transistor 210 is in the voltage swing of this moment.V
ThThen be expressed as the critical voltage of transistor 210.And, just can obtain following formula (6) with above-listed formula (5) further arrangement again:
V
GS＝OVDD+V
th-V
DATA-ΔV
S ……(6)
Wherein, Δ V
S=V
S-V
S0
Owing to can represent by following formula (7) by the size of current of Organic Light Emitting Diode 212:
Wherein, I
OLEDBe expressed as the size of current by Organic Light Emitting Diode 212, K is expressed as a constant, V
GSBe expressed as the grid-source voltage of transistor 210, and V
ThBe expressed as the critical voltage of transistor 210.Therefore, in the above-listed formula of above-listed formula (6) substitution (7), just can obtain following formula (8):
And, just can obtain following formula (9) with above-listed formula (8) further arrangement again:
By formula (9) as can be known, I
OLEDSize and the critical voltage V of transistor 210
ThIrrelevant.In other words, I
OLEDSize be not subjected to the influence of the critical voltage variation of transistor 210.Therefore, the brightness of each pixel is able to unanimity.In addition, by the explanation of above-listed formula (6) Δ V as can be known
S=V
S-V
S0, and V wherein
S0=OVSS+V
Th_OLED, V
Th_OLEDCritical voltage for Organic Light Emitting Diode 212.Therefore, again with above-listed formula (9) further arrangement again, just can obtain following formula (10) according to these two equatioies:
By formula (10) as can be known, I
OLEDSize be and V
Th_OLEDSize be directly proportional.In other words, no matter how many aging cross-pressures of Organic Light Emitting Diode 212 that makes of Organic Light Emitting Diode 212 risen, and the size of current by Organic Light Emitting Diode 212 all can improve along with the rising degree of cross-pressure.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated by the raising of above-mentioned size of current, and then improves because of the aging dent phenomenon that is caused of Organic Light Emitting Diode.
Second embodiment:
Teaching by first embodiment, usually knowing that the knowledgeable should be known in that the transistor 214 in the organic light-emitting diode pixel circuit 200 makes into to realize with a P transistor npn npn even this area has, for example is to realize with a P type thin film transistor (TFT), also can realize the present invention, one as shown in Figure 7.
Fig. 7 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 7 700, transistor 214 has made into to realize with a P transistor npn npn, and the grid of transistor 214 also couples sweep signal G
nAnd in all the other of Fig. 7 indicate, be expressed as identical member or signal with the identical person of sign among Fig. 2.Making transistor 214 into realize with a P transistor npn npn benefit, is that organic light-emitting diode pixel circuit 700 does not need to use sweep signal G
nInversion signal XG
n, make inversion signal XG
nCan be omitted, and organic light-emitting diode pixel circuit 700 still can be according to sweep signal G shown in Figure 3
n, enable signal EM and video data V
OLEDSignal sequence operate.
The 3rd embodiment:
Teaching by first embodiment, this area has knows that usually the knowledgeable should know, even the transistor 202 and 204 in the organic light-emitting diode pixel circuit 200 all makes into to realize with a P transistor npn npn, for example be all to realize with a P type thin film transistor (TFT), also can realize the present invention, one as shown in Figure 8.
Fig. 8 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 8 800, transistor 202 and 204 has made into to realize with a P transistor npn npn all, and the grid of transistor 202 and 204 also all couples sweep signal G
nInversion signal XG
nAnd in all the other of Fig. 8 indicate, be expressed as identical member or signal with the identical person of sign among Fig. 2.All making transistor 202 and 204 into realize with a P transistor npn npn benefit, is that organic light-emitting diode pixel circuit 800 does not need to use sweep signal G
n, make sweep signal G
nCan be omitted, and organic light-emitting diode pixel circuit 800 still can be according to sweep signal G shown in Figure 3
nInversion signal XG
n, enable signal EM and video data V
OLEDSignal sequence operate.With another viewpoint, the transistor 202,204 and 214 in the organic light-emitting diode pixel circuit 800 is exactly with described inversion signal XG
nBeing used as general sweep signal uses.
By the teaching of first embodiment to the, three embodiment, can summarize the transistor 202,204,208 among these embodiment and the rule of 214 conducting sequential.That is to say no matter transistor 202,204,208 and 214 is to realize with the N transistor npn npn or with the P transistor npn npn, these four transistorized conducting sequential all must meet such rule.This rule declaration is as follows: in the precharge period P, transistor 202,204 and 208 presents conducting according to its signal separately, and transistor 214 then presents according to its signal closes; Among the W, transistor 202 and 204 presents conducting according to its signal separately during writing, and transistor 208 and 212 then presents according to its signal separately closes; Among the E, transistor 202 and 204 presents according to its signal separately closes between light emission period, and transistor 208 and 214 then presents conducting according to its signal separately.Wherein, during writing W after the precharge period P, and between light emission period E during writing after the W.
The 4th embodiment:
By the teaching of first embodiment to the, three embodiment, the present invention also proposes a kind of organic LED display device that adopts above-mentioned organic light-emitting diode pixel circuit, and one as shown in Figure 9.Fig. 9 is the synoptic diagram according to the organic LED display device of one embodiment of the invention.This organic LED display device 900 includes scan drive circuit 910, data drive circuit 920, supply voltage supply circuit 930 and display panel 940.And display panel 940 includes many EM signal wires (as indicating shown in the 942-1), multi-strip scanning line (as indicating shown in the 942-2), many inversion signal lines (as indicating shown in the 942-3), many data lines (as indicating shown in 944), lead 946 and a plurality of pixels (as indicating shown in 948).
In this example, each pixel 948 all adopts the circuit framework shown in the organic light-emitting diode pixel circuit 200 of Fig. 2, therefore in each pixel 948, is expressed as identical member or signal with the identical person of sign among Fig. 2.It should be noted that in this example referential supply voltage OVSS is an earthing potential.And as shown in Figure 9, the transistor in each pixel 948 all is to realize with the N transistor npn npn, for example is all to realize with N type thin film transistor (TFT).In addition, about the part of scan drive circuit 910, indicate EM
nBe expressed as the required enable signal of n row pixel 948.And G
nBe expressed as the required sweep signal of n row pixel 948.As for XG
n, it is expressed as the required sweep signal G of n row pixel 948
nInversion signal.Wherein, n is a natural number.The detailed annexation of the above member is showed in Fig. 9, just repeats no more at this.
Above-mentioned data drive circuit 920 is in order to provide each pixel 948 required video data.As for above-mentioned scan drive circuit 910, it can drive each row pixel 948 according to signal sequence shown in Figure 3.Please be example with the n row pixel of being described in the display panel 940 948 simultaneously with reference to Fig. 9 and Fig. 3, scan drive circuit 910 can make sweep signal G in the precharge period P
nWith enable signal EM
nBe all high levle, and make sweep signal G
nInversion signal XG
nBe low level.And scan drive circuit 910 among the W, can make sweep signal G during writing
nBe high levle, and make sweep signal G
nInversion signal XG
nWith enable signal EM
nBe all low level.In addition, scan drive circuit 910 among the E, can make sweep signal G between light emission period
nBe low level, and make sweep signal G
nInversion signal XG
nWith enable signal EM
nBe all high levle.
Because the circuit framework shown in the organic light-emitting diode pixel circuit 200 of display panel 940 employing Fig. 2, therefore the brightness of each pixel 948 is able to unanimity, and the brightness reduction appears in each pixel 948 because of Organic Light Emitting Diode is aging phenomenon can be compensated, and then improves because of the aging dent phenomenon that is caused of Organic Light Emitting Diode.
The 5th embodiment:
By the teaching of the 4th embodiment, this area has knows that usually the knowledgeable should know that each pixel 948 in the aforementioned display panel 940 all can change the circuit framework shown in the organic light-emitting diode pixel circuit 700 that adopts Fig. 7 into.Thus, just organic LED display device 900 can omit all inversion signal lines (as indicating shown in the 942-3), and scan drive circuit 910 does not need to possess the function of the inversion signal of exportable sweep signal yet.
The 6th embodiment:
By the teaching of the 4th embodiment, this area has knows that usually the knowledgeable should know that each pixel 948 in the aforementioned display panel 940 all can change the circuit framework shown in the organic light-emitting diode pixel circuit 800 that adopts Fig. 8 into.Thus, just organic LED display device 900 can omit all sweep traces (as indicating shown in the 942-2), and scan drive circuit 910 does not need to possess the function of exportable sweep signal yet.
By the teaching of the 4th embodiment to the six embodiment, can summarize the transistor 202,204,208 of each pixel 948 of scan drive circuit 910 conductings among these embodiment and 214 rule.That is to say no matter transistor 202,204,208 and 214 is to realize with the N transistor npn npn or with the P transistor npn npn, these four transistorized conducting sequential all must meet such rule.With the n row pixel 948 described in the display panel 940 is example: this is listed as the transistor 202,204 and 208 conductings of each pixel 948 to scan drive circuit 910 in order to control in the precharge period P, and controls this transistor that is listed as each pixel 948 214 and close.Also this is listed as the transistor 202 and 204 conductings of each pixel 948 to scan drive circuit 910 in order to control among the W during writing, and controls this transistor that is listed as each pixel 948 208 and 214 and close.In addition, scan drive circuit 910 is also closed in order to this transistor 202 and 204 that is listed as each pixel 948 of control among the E between light emission period, and controls this transistor that is listed as each pixel 948 208 and 214 conductings.Wherein, during writing W after the precharge period P, and between light emission period E during writing after the W.
In sum, the present invention adopts five transistors, an electric capacity and an Organic Light Emitting Diode to make organic light-emitting diode pixel circuit.See through the special relation of coupling of above-mentioned these members and the circuit characteristic that each transistorized specific conducting sequential is produced, can make to have nothing to do, and can be directly proportional with the cross-pressure of Organic Light Emitting Diode itself by the size of current of Organic Light Emitting Diode by the size of current of Organic Light Emitting Diode and the critical voltage of driving transistors.Therefore, the brightness of Organic Light Emitting Diode and the critical voltage of driving transistors are irrelevant, thereby can make the brightness unanimity of each pixel.In addition, even if Organic Light Emitting Diode is aging and make the cross-pressure of Organic Light Emitting Diode rise, the size of current by Organic Light Emitting Diode also can improve along with the rising degree of cross-pressure.In other words, the size of current by Organic Light Emitting Diode can improve along with the degree of aging of Organic Light Emitting Diode.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated by the raising of above-mentioned size of current, and then can improve because of the aging dent phenomenon that is caused of Organic Light Emitting Diode.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this operator, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim scope person of defining.
Claims (11)
1. an organic light-emitting diode pixel circuit is characterized in that, described image element circuit comprises:
One the first transistor has a first grid, one first source/drain electrode and one second source/drain electrode, and described first source/drain electrode is applicable to and receives a video data;
One electric capacity has one first end and one second end, and described first end couples described second source/drain electrode;
One transistor seconds has a second grid, one the 3rd source/drain electrode and one the 4th source/drain electrode, and described second grid couples described second end of described electric capacity;
One the 3rd transistor has one the 3rd grid, one the 5th source/drain electrode and one the 6th source/drain electrode, and described the 5th source/drain electrode couples described second grid, and described the 6th source/drain electrode couples described the 3rd source/drain electrode;
One the 4th transistor has one the 4th grid, one the 7th source/drain electrode and one the 8th source/drain electrode, and described the 7th source/drain electrode couples described second source/drain electrode, and described the 8th source/drain electrode couples described the 3rd source/drain electrode;
One the 5th transistor has one the 5th grid, one the 9th source/drain electrode and 1 the tenth source/drain electrode, and described the 9th source/drain electrode couples one first supply voltage, and described the tenth source/drain electrode couples described the 3rd source/drain electrode; And
One Organic Light Emitting Diode, its anode and negative electrode couple described the 4th source/drain electrode and a second source voltage respectively, and described second source voltage is less than described first supply voltage.
2. organic light-emitting diode pixel circuit as claimed in claim 1, it is characterized in that, in wherein between a precharge phase, described the first transistor, described the 5th transistor of described the 3rd transistor AND gate presents conducting according to its signal separately, described the 4th transistor then presents according to its signal closes, in during one writes, described the first transistor and described the 3rd transistor present conducting according to its signal separately, described the 5th transistor of described the 4th transistor AND gate then presents according to its signal separately closes, in between a light emission period, described the first transistor and described the 3rd transistor present according to its signal separately closes, described the 5th transistor of described the 4th transistor AND gate then presents conducting according to its signal separately, during wherein said the writing between described precharge phase after, and between described light emission period during described writing after.
3. organic light-emitting diode pixel circuit as claimed in claim 2, it is characterized in that, wherein said the first transistor, described transistor seconds, described the 3rd transistor, described the 5th transistor of described the 4th transistor AND gate is all realized with a N transistor npn npn, and described first grid and described the 3rd grid all couple the one scan signal, described the 4th grid couples the inversion signal of described sweep signal, and described the 5th grid couples an activation signal, in wherein between described precharge phase, described sweep signal and described enable signal are all high levle, and the inversion signal of described sweep signal is a low level, in during described writing, described sweep signal is a high levle, and the inversion signal of described sweep signal and described enable signal are all low level, in between described light emission period, described sweep signal is a low level, and the inversion signal of described sweep signal and described enable signal are all high levle.
4. organic light-emitting diode pixel circuit as claimed in claim 2, it is characterized in that, wherein said the first transistor, described transistor seconds, described the 5th transistor of described the 3rd transistor AND gate is all realized with a N transistor npn npn, described the 4th transistor is then realized with a P transistor npn npn, and described first grid, described the 3rd grid and described the 4th grid all couple the one scan signal, and described the 5th grid couples an activation signal, in wherein between described precharge phase, described sweep signal and described enable signal are all high levle, in during described writing, described sweep signal is a high levle, and described enable signal is a low level, in between described light emission period, described sweep signal is a low level, and described enable signal is a high levle.
5. organic light-emitting diode pixel circuit as claimed in claim 2, it is characterized in that, wherein said transistor seconds, described the 5th transistor of described the 4th transistor AND gate is all realized with a N transistor npn npn, described the first transistor and described the 3rd transistor are then all realized with a P transistor npn npn, and described first grid, described the 3rd grid and described the 4th grid all couple the one scan signal, and described the 5th grid couples an activation signal, in wherein between described precharge phase, described sweep signal is a low level, and described enable signal is a high levle, in during described writing, described sweep signal and described enable signal are all low level, in between described light emission period, described sweep signal and described enable signal are all high levle.
6. organic light-emitting diode pixel circuit as claimed in claim 2, it is characterized in that wherein said the first transistor, described transistor seconds, described the 3rd transistor, described the 5th transistor of described the 4th transistor AND gate are all realized with a thin film transistor (TFT).
7. an organic LED display device is characterized in that, described display device comprises:
One display panel has an image element circuit, and described image element circuit comprises:
One the first transistor has a first grid, one first source/drain electrode and one second source/drain electrode, and described first source/drain electrode is applicable to and receives a video data;
One electric capacity has one first end and one second end, and described first end couples described second source/drain electrode;
One transistor seconds has a second grid, one the 3rd source/drain electrode and one the 4th source/drain electrode, and described second grid couples described second end of described electric capacity;
One the 3rd transistor has one the 3rd grid, one the 5th source/drain electrode and one the 6th source/drain electrode, and described the 5th source/drain electrode couples described second grid, and described the 6th source/drain electrode couples described the 3rd source/drain electrode;
One the 4th transistor has one the 4th grid, one the 7th source/drain electrode and one the 8th source/drain electrode, and described the 7th source/drain electrode couples described second source/drain electrode, and described the 8th source/drain electrode couples described the 3rd source/drain electrode;
One the 5th transistor has one the 5th grid, one the 9th source/drain electrode and 1 the tenth source/drain electrode, and described the 9th source/drain electrode couples one first supply voltage, and described the tenth source/drain electrode couples described the 3rd source/drain electrode; And
One Organic Light Emitting Diode, its anode and negative electrode couple described the 4th source/drain electrode and a second source voltage respectively, and described second source voltage is less than described first supply voltage;
One data drive circuit is in order to provide described video data; And
Scan driving circuit, couple described first grid, described the 3rd grid, described the 4th grid and described the 5th grid, in between a precharge phase, control described the first transistor, described the 5th transistor turns of described the 3rd transistor AND gate, and control described the 4th transistor and close, and in during one writes, control described the first transistor and described the 3rd transistor turns, and control described the 5th transistor of described the 4th transistor AND gate and close, also close in order to described the first transistor of control and described the 3rd transistor between a light emission period, and control described the 5th transistor turns of described the 4th transistor AND gate, during wherein said the writing between described precharge phase after, and between described light emission period during described writing after.
8. organic LED display device as claimed in claim 7, it is characterized in that, wherein said the first transistor, described transistor seconds, described the 3rd transistor, described the 5th transistor of described the 4th transistor AND gate is all realized with a N transistor npn npn, and described scan drive circuit provides the one scan signal to described first grid and described the 3rd grid, and provide the inversion signal of described sweep signal and an activation signal respectively to described the 4th grid and described the 5th grid, in wherein between described precharge phase, described sweep signal and described enable signal are all high levle, and the inversion signal of described sweep signal is a low level, in during described writing, described sweep signal is a high levle, and the inversion signal of described sweep signal and described enable signal are all low level, in between described light emission period, described sweep signal is a low level, and the inversion signal of described sweep signal and described enable signal are all high levle.
9. organic LED display device as claimed in claim 7, it is characterized in that, wherein said the first transistor, described transistor seconds, described the 5th transistor of described the 3rd transistor AND gate is all realized with a N transistor npn npn, described the 4th transistor is then realized with a P transistor npn npn, and described scan drive circuit provides the one scan signal to described first grid, described the 3rd grid and described the 4th grid, and provide an activation signal to described the 5th grid, in wherein between described precharge phase, described sweep signal and described enable signal are all high levle, in during described writing, described sweep signal is a high levle, and described enable signal is a low level, in between described light emission period, described sweep signal is a low level, and described enable signal is a high levle.
10. organic LED display device as claimed in claim 7, it is characterized in that, wherein said transistor seconds, described the 5th transistor of described the 4th transistor AND gate is all realized with a N transistor npn npn, described the first transistor and described the 3rd transistor are then all realized with a P transistor npn npn, and described scan drive circuit provides the one scan signal to described first grid, described the 3rd grid and described the 4th grid, and provide an activation signal to described the 5th grid, in wherein between described precharge phase, described sweep signal is a low level, and described enable signal is a high levle, in during described writing, described sweep signal and described enable signal are all low level, in between described light emission period, described sweep signal and described enable signal are all high levle.
11. organic LED display device as claimed in claim 7, it is characterized in that wherein said the first transistor, described transistor seconds, described the 3rd transistor, described the 5th transistor of described the 4th transistor AND gate are all realized with a thin film transistor (TFT).
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