CN101847688A - Method for decreasing discreteness of resistance value of resistance change memory - Google Patents
Method for decreasing discreteness of resistance value of resistance change memory Download PDFInfo
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Abstract
The invention relates to a method for decreasing the discreteness of the resistance value of a resistance change memory. The method comprises the following steps of: (1) applying a current pulse in a forming process to convert a resistance change material of the resistance change memory from an initial state to a low resistance state; (2) applying a current pulse in a set process to convert the resistance change material of the resistance change memory from a high resistance state to the low resistance state; and (3) applying a reverse voltage pulse in a reset process to convert the resistance change material of the resistance change memory from the low resistance state to the high resistance state. The current/voltage control method provided by the invention can obviously decrease the discreteness of the resistance value of a component and can also enhance the resistance value of the low resistance state, thereby decreasing the working current of the component and lowering the power consumption.
Description
Technical field
The invention belongs to the semiconductor microelectronics technical field, be specifically related to a kind of method that reduces resistance discreteness in the resistance-variable storing device electric resistance changing process.
Background technology
Resistance-variable storing device (RRAM) is a kind of novel non-volatility memorizer that utilizes controlled resistance variations to realize storage.Sort memory have at a high speed (＜5ns), low-voltage (＜2V), high storage density, be easy to advantages such as integrated, be the strong competitor of semiconductor memory of future generation.The operation principle of resistance-variable storing device is to apply size or the different voltage of polarity at resistive material two ends, and the resistance value of control resistive material is changed between high low resistance state.The working method of resistance-variable storing device comprises one pole and bipolar two kinds, and the former applies the voltage of single polarity at the device two ends, utilizes the vary in size resistance value of control resistive material of applied voltage to change between high low resistance state, to realize writing and wiping of data; And the latter is the conversion that utilizes the voltage control resistive material resistance value that applies opposed polarity.Two stable status that claim the resistive material list to reveal traditionally are high-impedance state and low resistance state, by high-impedance state to low resistance state change program or SET into, change eraze or RESET by low resistance state into to high-impedance state.Before resistance-variable storing device changes for the first time, need apply once bigger voltage usually, make device change low resistance state into from initial condition, this process is called the Forming process.Relative one pole resistance-variable storing device, bipolar device generally has more performance and more easy operation, so the bipolar resistive random memory more is hopeful to obtain final application.
The discreteness that the key issue that resistance-variable storing device faces at present is exactly a resistance is very big, and this can cause dwindling of high low-resistance window on the one hand, and the design of also externally containing the system circuit has on the other hand caused difficulty.Studies show that, why resistance-variable storing device can be changed between the state of different resistances mutually, mainly with relevant at the inner formation of dielectric thin-film material filament conductive channel, the break-make of these filament conductive channels has just determined memory cell to be in high-impedance state or low resistance state, and the shape of passage has directly determined the resistance value of device.Yet, in the formation of Forming process conductive channel, and being communicated with again of passage all having very big randomness in the SET process, this has just caused the resistance consistency of resistance-variable storing device relatively poor.Therefore effectively the formation of control conductive channel is the key that improves memory device performance.
Summary of the invention
(technical problem that will solve)
The object of the present invention is to provide a kind of method that reduces resistance discreteness in the resistance-variable storing device electric resistance changing process, to solve the big problem of resistance discreteness of the prior art.
(technical scheme)
For addressing the above problem, the method that reduces discreteness of resistance value of resistance change memory of the present invention comprises: S1, apply a current impulse in the Forming process, make the resistive material of resistance-variable storing device transfer low resistance state to from initial state; S2, in the SET process, apply a current impulse, make the resistive material of resistance-variable storing device transfer low resistance state to from high-impedance state; S3, in the RESET process, apply a reverse voltage pulse, make the resistive material of resistance-variable storing device transfer high-impedance state to from low resistance state.
Wherein, the size of the current impulse among the described step S1 is at 1nA～10uA; The size of the current impulse among the described step S2 is at 50nA～500uA; The size of the potential pulse among the described step S3 is at 1V～3V.
A kind of method that reduces discreteness of resistance value of resistance change memory also is provided, comprises: S1, fixed resistance of series connection outside the resistance-variable storing device array; S2, apply a potential pulse in the Forming process, the resistance by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from initial state; S3, apply a potential pulse in the SET process, the resistance by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from high-impedance state; S4, in the RESET process, apply a reverse voltage pulse, and, make the resistive material of resistance-variable storing device transfer high-impedance state to from low resistance state simultaneously with the resistive short of series connection.
Wherein, the resistive material high-impedance state resistance of the resistance of described fixed resistance and resistance-variable storing device is close.
A kind of method that reduces discreteness of resistance value of resistance change memory also is provided, comprises: S1, diode of series connection outside the resistance-variable storing device array; S2, apply a potential pulse in the Forming process, the backward diode by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from initial state; S3, apply a potential pulse in the SET process, the backward diode by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from high-impedance state; S4, apply a reverse voltage pulse in the RESET process, the forward diode by series connection makes the resistive material of resistance-variable storing device transfer high-impedance state to from low resistance state.
Wherein, the forward current of described diode is greater than the maximum current by resistance-variable storing device in the RESET process, the reverse saturation current of described diode is bigger than high-impedance state electric current, and the conducting direction of diode is consistent with the voltage direction of resistance-variable storing device RESET process.
Wherein, the size of the potential pulse among the described step S2 is at 3V～15V; The size of the potential pulse among the described step S3 is at 2V～10V; The size of the potential pulse among the described step S4 is at 1V～3V.
(beneficial effect)
The current/voltage control method that the present invention proposes can reduce the discreteness of device resistance significantly, and can improve the resistance of low resistance state simultaneously, thereby reduces the operating current of device, reduces power consumption.
Description of drawings
Fig. 1 is the relation of hafnium oxide resistance-variable storing device low resistance state resistance and SET process electric current;
Fig. 2 improves conforming electrical block diagram for fixed resistance of series connection that the present invention proposes;
Fig. 3 improves conforming electrical block diagram for diode of series connection that invention proposes;
Fig. 4 is the distribution of high-impedance state and the average resistance of low resistance state after 50 hafnium oxide resistance-change memory device Forming processes, and the distribution that comprises the electric current Forming that traditional voltage Forming and the present invention propose relatively;
Fig. 5 be the low resistance state resistance that obtains of electric current SET method that hafnium oxide resistance-variable storing device uses conventional voltage SET and the present invention to propose distribution relatively, every kind of method has been surveyed 100 cycles;
Fig. 6 for the hafnium oxide resistance-variable storing device in the resistance of a 2k Ω of SET process series connection and traditional distribution comparison that changes the high low resistance state resistance that obtains when not connecting by potential pulse, every kind of method has been surveyed 100 cycles.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Discover that the low resistance state resistance is subjected to the control of SET process electric current, as shown in Figure 1, the current limliting of SET process is big more, and the resistance of low resistance state is low more, is to improve the conforming key of resistance so keep the constant of SET process electric current.Yet traditional voltage control method is to add constant voltage signal, change in a flash in device resistance, because the influence of parasitic capacitance, the loop is inner can to produce very big overshoot current, this big electric current has in a flash caused the uncontrollability of resistance, is to cause discrete most important reason.The current control method that replaces can be avoided this problem, because the method for Current Control has kept the constant of electric current loop the in, thereby has also just guaranteed stablizing of low resistance state resistance after the SET.Because the high-impedance state resistance mainly is subjected to the voltage control of RESET process, therefore in the RESET process, must adopt voltage signal.
The novel resistance-variable storing device control method that present embodiment proposes is as follows:
Apply a less current pulse (impulse magnitude is 1nA～10uA, and concrete numerical value is decided on the change resistance layer material) in S1, the Forming process, make device transfer low resistance state to from initial state;
S2, (impulse magnitude is 50nA～500uA), make device transfer low resistance state to from high-impedance state to apply a suitable current impulse in the SET process;
S3, (impulse magnitude is 1V～3V), make device transfer high-impedance state to from low resistance state to apply a suitable reverse voltage pulse in the RESET process.
Accompanying drawing 4 has provided and has adopted current scanning method resistance distribution that obtains and the result who adopts the voltage scanning method in the different components Forming process relatively, as can be seen, current methods has obviously been improved the consistency of different components, and having improved the resistance of low resistance state, electric current in the circuit reduces, the power consumption step-down thereby make.The comparison that resistance when accompanying drawing 5 has provided and used the resistance of electric current SET and voltage RESET to distribute with working voltage SET and RESET simultaneously respectively to same device distributes, the present invention proposes as can be seen improves one's methods in the effect that improves aspect the resistance consistency.
The novel resistance-variable storing device control method that present embodiment proposes is as follows:
S1, the fixed resistance of outside the resistance-variable storing device array, connecting, the resistance of resistance is close with resistive device high-impedance state resistance, as shown in Figure 2, during memory operation,
S2, (impulse magnitude is 3V～15V), and the resistance by series connection makes device transfer low resistance state to from initial state to apply a bigger potential pulse in the Forming process;
S3, (impulse magnitude is 2V～10V), and the resistance by series connection makes device transfer low resistance state to from high-impedance state to apply a suitable potential pulse in the SET process;
S4, (impulse magnitude is 1V～3V), and simultaneously with the resistive short of series connection, under the situation of series resistance useless, makes device transfer high-impedance state to from low resistance state to apply a suitable reverse voltage pulse in the RESET process.
The comparison that resistance distributed when accompanying drawing 6 had provided same device series resistance and non-series resistance, as can be seen, the consistency of resistance is improved after the series resistance, and has improved the resistance of low resistance state.This has just proved that the method in Forming and SET process series resistance that the present invention proposes is effective.
Embodiment 3
The novel resistance-variable storing device control method that present embodiment proposes is as follows:
S1, the diode of outside the resistance-variable storing device array, connecting, the forward current of diode enough big (greater than the maximum current by resistance-variable storing device in the RESET process), reverse saturation current is than high-impedance state electric current bigger (close best with the pulse current size of SET process in the embodiment 1), and the conducting direction of diode is consistent with the voltage direction of resistance-variable storing device RESET process.Circuit structure as shown in Figure 3.During memory operation;
S2, (impulse magnitude is 3V～15V), and the backward diode by series connection makes device transfer low resistance state to from initial state to apply a bigger potential pulse in the Forming process;
S3, (impulse magnitude is 2V～10V), and the backward diode by series connection makes device transfer low resistance state to from high-impedance state to apply a suitable potential pulse in the SET process;
S4, (impulse magnitude is 1V～3V), and the forward diode by series connection makes device transfer high-impedance state to from low resistance state to apply a suitable reverse voltage pulse in the RESET process.
More than be preferred forms of the present invention, according to content disclosed by the invention, those of ordinary skill in the art can expect apparently that some are equal to, substitute or the scheme of modification, all should fall into the scope of protection of the invention.
Claims (7)
1. a method that reduces discreteness of resistance value of resistance change memory is characterized in that, this method: comprising:
S1, in the Forming process, apply a current impulse, make the resistive material of resistance-variable storing device transfer low resistance state to from initial state;
S2, in the SET process, apply a current impulse, make the resistive material of resistance-variable storing device transfer low resistance state to from high-impedance state;
S3, in the RESET process, apply a reverse voltage pulse, make the resistive material of resistance-variable storing device transfer high-impedance state to from low resistance state.
2. the method that reduces discreteness of resistance value of resistance change memory as claimed in claim 1 is characterized in that,
The size of the current impulse among the described step S1 is at 1nA～10uA;
The size of the current impulse among the described step S2 is at 50nA～500uA;
The size of the potential pulse among the described step S3 is at 1V～3V.
3. a method that reduces discreteness of resistance value of resistance change memory is characterized in that, this method comprises:
S1, the fixed resistance of outside the resistance-variable storing device array, connecting;
S2, apply a potential pulse in the Forming process, the resistance by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from initial state;
S3, apply a potential pulse in the SET process, the resistance by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from high-impedance state;
S4, in the RESET process, apply a reverse voltage pulse, and, make the resistive material of resistance-variable storing device transfer high-impedance state to from low resistance state simultaneously with the resistive short of series connection.
4. the method that reduces discreteness of resistance value of resistance change memory as claimed in claim 3 is characterized in that, the resistive material high-impedance state resistance of the resistance of described fixed resistance and resistance-variable storing device is close.
5. a method that reduces discreteness of resistance value of resistance change memory is characterized in that, this method comprises:
S1, the diode of outside the resistance-variable storing device array, connecting;
S2, apply a potential pulse in the Forming process, the backward diode by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from initial state;
S3, apply a potential pulse in the SET process, the backward diode by series connection makes the resistive material of resistance-variable storing device transfer low resistance state to from high-impedance state;
S4, apply a reverse voltage pulse in the RESET process, the forward diode by series connection makes the resistive material of resistance-variable storing device transfer high-impedance state to from low resistance state.
6. the method that reduces discreteness of resistance value of resistance change memory as claimed in claim 5 is characterized in that,
The forward current of described diode is greater than the maximum current by resistance-variable storing device in the RESET process,
The reverse saturation current of described diode is bigger than high-impedance state electric current,
And the conducting direction of diode is consistent with the voltage direction of resistance-variable storing device RESET process.
7. as claim 3 or the 5 described methods that reduce discreteness of resistance value of resistance change memory, it is characterized in that,
The size of the potential pulse among the described step S2 is at 3V～15V;
The size of the potential pulse among the described step S3 is at 2V～10V;
The size of the potential pulse among the described step S4 is at 1V～3V.
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| CN102682840A (en) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | Method and structure for improving reliability of non-volatile resistive memory |
| CN107045883A (en) * | 2015-11-16 | 2017-08-15 | 台湾积体电路制造股份有限公司 | RRAM circuits and the method for RRAM rows formation |
| CN108878646A (en) * | 2018-06-28 | 2018-11-23 | 北京大学 | A kind of resistive device multistage stabilization resistance state implementation method and electronic equipment |
| CN111816238A (en) * | 2019-04-11 | 2020-10-23 | 爱思开海力士有限公司 | Resistive memory device |
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| CN111816238B (en) * | 2019-04-11 | 2024-03-19 | 爱思开海力士有限公司 | Resistive memory device |
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