CN101847688B - Method for decreasing discreteness of resistance value of resistance change memory - Google Patents
Method for decreasing discreteness of resistance value of resistance change memory Download PDFInfo
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- CN101847688B CN101847688B CN2010101631008A CN201010163100A CN101847688B CN 101847688 B CN101847688 B CN 101847688B CN 2010101631008 A CN2010101631008 A CN 2010101631008A CN 201010163100 A CN201010163100 A CN 201010163100A CN 101847688 B CN101847688 B CN 101847688B
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Abstract
The invention relates to a method for decreasing the discreteness of the resistance value of a resistance change memory. The method comprises the following steps of: (1) applying a current pulse in a forming process to convert a resistance change material of the resistance change memory from an initial state to a low resistance state; (2) applying a current pulse in a set process to convert the resistance change material of the resistance change memory from a high resistance state to the low resistance state; and (3) applying a reverse voltage pulse in a reset process to convert the resistance change material of the resistance change memory from the low resistance state to the high resistance state. The current/voltage control method provided by the invention can obviously decrease the discreteness of the resistance value of a component and can also enhance the resistance value of the low resistance state, thereby decreasing the working current of the component and lowering the power consumption.
Description
Technical field
The invention belongs to the semiconductor microelectronics technical field, be specifically related to a kind of method that reduces resistance discreteness in the resistance-variable storing device electric resistance changing process.
Background technology
Resistance-variable storing device (RRAM) is a kind of novel non-volatility memorizer that utilizes controlled resistance variations to realize storage.Sort memory have at a high speed (＜5ns), low-voltage (＜2V), high storage density, be easy to advantages such as integrated, be the strong competitor of semiconductor memory of future generation.The operation principle of resistance-variable storing device is to become the material two ends in resistance to apply size or polarity different voltages with different, and the control resistance becomes the resistance value of material and between high low resistance state, changes.The working method of resistance-variable storing device comprises one pole and bipolar two kinds, and the former applies the voltage of single polarity at the device two ends, and resistance value that the control resistance becomes material is changed between high low resistance state to utilize applied voltage to vary in size, to realize writing and wiping of data; And the latter utilizes the voltage control resistance that applies opposed polarity to become the conversion of material resistance value.Claim that traditionally resistance becomes two stable status that material list reveals and is high-impedance state and low resistance state, by high-impedance state to low resistance state change program or SET into, change eraze or RESET by low resistance state into to high-impedance state.Before resistance-variable storing device changes for the first time, need apply once bigger voltage usually, make device change low resistance state into from initial condition, this process is called the Forming process.Relative one pole resistance-variable storing device, bipolar device generally have more performance and operation more easily, so the bipolar resistive random memory more is hopeful to obtain final application.
The discreteness that the key issue that resistance-variable storing device faces at present is exactly a resistance is very big, and this can cause dwindling of high low-resistance window on the one hand, and the design of also externally containing the system circuit has on the other hand caused difficulty.Research shows; Why resistance-variable storing device can be changed between the state of different resistances each other; Mainly with relevant at the inner formation of dielectric thin-film material filament conductive channel; The break-make of these filament conductive channels has just determined memory cell to be in high-impedance state or low resistance state, and the shape of passage has directly determined the resistance value of device.Yet, in the formation of Forming process conductive channel, and being communicated with again of passage all having very big randomness in the SET process, this has just caused the resistance consistency of resistance-variable storing device relatively poor.Therefore effectively the formation of control conductive channel is the key that improves memory device performance.
Summary of the invention
(technical problem that will solve)
The object of the present invention is to provide a kind of method that reduces resistance discreteness in the resistance-variable storing device electric resistance changing process, to solve the big problem of resistance discreteness of the prior art.
(technical scheme)
For addressing the above problem, the method that reduces discreteness of resistance value of resistance change memory of the present invention comprises: S1, in the Forming process, apply a current impulse, make the resistance of resistance-variable storing device become material and transfer low resistance state to from initial state; S2, in the SET process, apply a current impulse, make the resistance of resistance-variable storing device become material and transfer low resistance state to from high-impedance state; S3, in the RESET process, apply a reverse voltage pulse, make the resistance of resistance-variable storing device become material and transfer high-impedance state to from low resistance state.
Wherein, the size of the current impulse among the said step S1 is at 1nA～10uA; The size of the current impulse among the said step S2 is at 50nA～500uA; The size of the potential pulse among the said step S3 is at 1V～3V.
A kind of method that reduces discreteness of resistance value of resistance change memory also is provided, comprises: S1, fixed resistance of series connection outside the resistance-variable storing device array; S2, in the Forming process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from initial state through the resistance of series connection; S3, in the SET process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from high-impedance state through the resistance of series connection; S4, in the RESET process, apply a reverse voltage pulse, and simultaneously with the resistive short of series connection, make the resistance of resistance-variable storing device become material and transfer high-impedance state to from low resistance state.
Wherein, the resistance of the resistance of said fixed resistance and resistance-variable storing device change material high-impedance state resistance is close.
A kind of method that reduces discreteness of resistance value of resistance change memory also is provided, comprises: S1, diode of series connection outside the resistance-variable storing device array; S2, in the Forming process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from initial state through the backward diode of series connection; S3, in the SET process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from high-impedance state through the backward diode of series connection; S4, in the RESET process, apply a reverse voltage pulse,, make the resistance of resistance-variable storing device become material and transfer high-impedance state to from low resistance state through the forward diode of series connection.
Wherein, The forward current of said diode is greater than the maximum current through resistance-variable storing device in the RESET process; The reverse saturation current of said diode is bigger than high-impedance state electric current, and the conducting direction of diode is consistent with the voltage direction of resistance-variable storing device RESET process.
Wherein, the size of the potential pulse among the said step S2 is at 3V～15V; The size of the potential pulse among the said step S3 is at 2V～10V; The size of the potential pulse among the said step S4 is at 1V～3V.
(beneficial effect)
The current/voltage control method that the present invention proposes can reduce the discreteness of device resistance significantly, and can improve the resistance of low resistance state simultaneously, thereby reduces the operating current of device, reduces power consumption.
Description of drawings
Fig. 1 is the relation of hafnium oxide resistance-variable storing device low resistance state resistance and SET process electric current;
Fig. 2 improves conforming electrical block diagram for fixed resistance of series connection that the present invention proposes;
Fig. 3 improves conforming electrical block diagram for diode of series connection that invention proposes;
Fig. 4 is the distribution of high-impedance state and the average resistance of low resistance state after 50 hafnium oxide resistance-change memory device Forming processes, and the distribution that comprises the electric current Forming that traditional voltage Forming and the present invention propose relatively;
Fig. 5 is the distribution comparison of the low resistance state resistance that obtains of electric current SET method that hafnium oxide resistance-variable storing device uses conventional voltage SET and the present invention to propose, and every kind of method has been surveyed 100 cycles;
Fig. 6 for the hafnium oxide resistance-variable storing device in the resistance of a 2k Ω of SET process series connection and traditional distribution comparison that changes the high low resistance state resistance that obtains when not connecting through potential pulse, every kind of method has been surveyed 100 cycles.
Embodiment
Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
Discover that the low resistance state resistance receives the control of SET process electric current, shown in accompanying drawing 1, the current limliting of SET process is big more, and the resistance of low resistance state is low more, is to improve the conforming key of resistance so keep the constant of SET process electric current.Yet the traditional voltage control method is to add constant voltage signal; Change in a flash in device resistance; Because the influence of parasitic capacitance; The loop is inner can to produce very big overshoot current, and this big electric current has in a flash caused the uncontrollability of resistance, is to cause discrete most important reason.The current control method that replaces can be avoided this problem, because the method for Current Control has kept the constant of electric current loop the in, thereby has also just guaranteed stablizing of low resistance state resistance after the SET.Because the high-impedance state resistance mainly receives the voltage control of RESET process, therefore in the RESET process, must adopt voltage signal.
Embodiment 1
The novel resistance-variable storing device control method that present embodiment proposes is following:
Apply a less current pulse (impulse magnitude is 1nA～10uA, and concrete numerical value is looked the change resistance layer material and decided) in S1, the Forming process, make device transfer low resistance state to from initial state;
S2, (impulse magnitude is 50nA～500uA), make device transfer low resistance state to from high-impedance state in the SET process, to apply an appropriate current pulse;
S3, (impulse magnitude is 1V～3V), make device transfer high-impedance state to from low resistance state in the RESET process, to apply a suitable reverse voltage pulse.
Accompanying drawing 4 has provided and has adopted current scanning method resistance distribution that obtains and the result who adopts the voltage scanning method in the different components Forming process relatively; Can find out; Current methods has obviously been improved the consistency of different components; And having improved the resistance of low resistance state, electric current in the circuit reduces, the power consumption step-down thereby make.Accompanying drawing 5 has provided use the resistance of electric current SET and voltage RESET to distribute respectively the comparison that resistance when working voltage SET is with RESET simultaneously distributes of same device, the effect aspect raising resistance consistency of improving one's methods that can find out that the present invention proposes.
The novel resistance-variable storing device control method that present embodiment proposes is following:
S1, the fixed resistance of outside the resistance-variable storing device array, connecting, the resistance of resistance is close with resistance change device high-impedance state resistance, shown in accompanying drawing 2, during memory operation,
S2, (impulse magnitude is 3V～15V), and the resistance through series connection makes device transfer low resistance state to from initial state in the Forming process, to apply a bigger potential pulse;
S3, (impulse magnitude is 2V～10V), and the resistance through series connection makes device transfer low resistance state to from high-impedance state in the SET process, to apply a suitable voltage pulse;
S4, (impulse magnitude is 1V～3V), and simultaneously with the resistive short of series connection, under the situation of series resistance useless, makes device transfer high-impedance state to from low resistance state in the RESET process, to apply a suitable reverse voltage pulse.
The comparison that resistance distributed when accompanying drawing 6 had provided same device series resistance and non-series resistance can be found out that the consistency of resistance is improved after the series resistance, and improve the resistance of low resistance state.This has just proved that the method in Forming and SET process series resistance that the present invention proposes is effective.
Embodiment 3
The novel resistance-variable storing device control method that present embodiment proposes is following:
S1, the diode of outside the resistance-variable storing device array, connecting; The forward current of diode enough big (greater than the maximum current through resistance-variable storing device in the RESET process); Reverse saturation current is than high-impedance state electric current bigger (close best with the pulse current size of SET process in the embodiment 1), and the conducting direction of diode is consistent with the voltage direction of resistance-variable storing device RESET process.Circuit structure is shown in accompanying drawing 3.During memory operation;
S2, (impulse magnitude is 3V～15V), and the backward diode through series connection makes device transfer low resistance state to from initial state in the Forming process, to apply a bigger potential pulse;
S3, (impulse magnitude is 2V～10V), and the backward diode through series connection makes device transfer low resistance state to from high-impedance state in the SET process, to apply a suitable voltage pulse;
S4, (impulse magnitude is 1V～3V), and the forward diode through series connection makes device transfer high-impedance state to from low resistance state in the RESET process, to apply a suitable reverse voltage pulse.
More than be preferred forms of the present invention, according to content disclosed by the invention, those of ordinary skill in the art can expect obviously that some are equal to, substitute or the scheme of modification, all should fall into the scope of the present invention's protection.
Claims (3)
1. a method that reduces discreteness of resistance value of resistance change memory is characterized in that, this method comprises:
S1, the fixed resistance of outside the resistance-variable storing device array, connecting; It is close that the resistance of said fixed resistance and the resistance of resistance-variable storing device become material high-impedance state resistance;
S2, in the Forming process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from initial state through the resistance of series connection;
S3, in the SET process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from high-impedance state through the resistance of series connection;
S4, in the RESET process, apply a reverse voltage pulse, and simultaneously with the resistive short of series connection, make the resistance of resistance-variable storing device become material and transfer high-impedance state to from low resistance state.
2. a method that reduces discreteness of resistance value of resistance change memory is characterized in that, this method comprises:
S1, the diode of outside the resistance-variable storing device array, connecting;
S2, in the Forming process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from initial state through the backward diode of series connection;
S3, in the SET process, apply a potential pulse,, make the resistance of resistance-variable storing device become material and transfer low resistance state to from high-impedance state through the backward diode of series connection;
S4, in the RESET process, apply a reverse voltage pulse,, make the resistance of resistance-variable storing device become material and transfer high-impedance state to from low resistance state through the forward diode of series connection;
Wherein, The forward current of said diode is greater than the maximum current through resistance-variable storing device in the RESET process; The reverse saturation current of said diode is bigger than high-impedance state electric current, and the conducting direction of diode is consistent with the voltage direction of resistance-variable storing device RESET process.
3. according to claim 1 or claim 2 the method that reduces discreteness of resistance value of resistance change memory is characterized in that,
The size of the potential pulse among the said step S2 is at 3V～15V;
The size of the potential pulse among the said step S3 is at 2V～10V;
The size of the potential pulse among the said step S4 is at 1V～3V.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102682840A (en) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | Method and structure for improving reliability of non-volatile resistance memory |
| US10163503B2 (en) * | 2015-11-16 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM array with current limiting element to enable efficient forming operation |
| CN108878646A (en) * | 2018-06-28 | 2018-11-23 | 北京大学 | A kind of resistive device multistage stabilization resistance state implementation method and electronic equipment |
| KR20200120788A (en) * | 2019-04-11 | 2020-10-22 | 에스케이하이닉스 주식회사 | Resistance Variable Memory Device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738051A (en) * | 2005-07-06 | 2006-02-22 | 中国科学院上海硅酸盐研究所 | Non-volatility memorizer, changing method and preparation method based on resistance variations |
| CN1767049A (en) * | 2004-06-30 | 2006-05-03 | 夏普株式会社 | Method for driving variable resistor element and storage device |
| CN101159314A (en) * | 2007-10-30 | 2008-04-09 | 北京大学 | Memory cell of resistor type stochastic memory and preparation method thereof |
| CN101313423A (en) * | 2005-11-23 | 2008-11-26 | 桑迪士克3D公司 | Memory cell comprising nickel-cobalt oxide switching element |
| CN101393768A (en) * | 2008-10-23 | 2009-03-25 | 复旦大学 | Activated operation method for resistor memory |
| CN101393769A (en) * | 2008-10-23 | 2009-03-25 | 复旦大学 | Activated operation method for resistor memory |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1767049A (en) * | 2004-06-30 | 2006-05-03 | 夏普株式会社 | Method for driving variable resistor element and storage device |
| CN1738051A (en) * | 2005-07-06 | 2006-02-22 | 中国科学院上海硅酸盐研究所 | Non-volatility memorizer, changing method and preparation method based on resistance variations |
| CN101313423A (en) * | 2005-11-23 | 2008-11-26 | 桑迪士克3D公司 | Memory cell comprising nickel-cobalt oxide switching element |
| CN101159314A (en) * | 2007-10-30 | 2008-04-09 | 北京大学 | Memory cell of resistor type stochastic memory and preparation method thereof |
| CN101393768A (en) * | 2008-10-23 | 2009-03-25 | 复旦大学 | Activated operation method for resistor memory |
| CN101393769A (en) * | 2008-10-23 | 2009-03-25 | 复旦大学 | Activated operation method for resistor memory |
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