CN101846857A - FFS (Fringe Field Switching) type TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof - Google Patents
FFS (Fringe Field Switching) type TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Abstract
The invention discloses an FFS (Fringe Field Switching) type TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and a manufacturing method thereof, comprising a grid line and a data line. A pixel electrode, a common electrode and a thin film transistor are formed in a pixel area limited by the grid line and the data line, wherein the pixel electrode and/or the common electrode are/is provided with a plurality of ladder-shaped strip-shaped grooves which enable a plurality of horizontal electric field in multiple directions to be formed between the pixel electrode and the common electrode, and each strip-shaped groove at least comprises two zigzag structures. In the FFS type TFT-LCD array substrate and the manufacturing method thereof, by setting the pixel electrode into figures comprising a plurality of ladder-shaped broken lines, a polydomain liquid crystal working mode can be provided, the visual angle is enlarged, and the color drifting can be eliminated.
Description
Technical field
The present invention relates to LCD Technology, relate in particular to a kind of fringing field effect (Fringe FieldSwitching is called for short FFS) type Thin Film Transistor-LCD (TFT-LCD) array base palte and manufacture method thereof.
Background technology
The FFS pattern is a kind of liquid crystal drive pattern that can widen the visual angle, and the pixel electrode in the FFS type TFT-LCD array base palte is bar shaped, and when powering up, formation is parallel to the level of base plate electric field between pixel electrode and the public electrode.Be a kind of structural plan figure of prior art FFS type TFT-LCD array base palte as shown in figure 19, be formed with grid line 22 and data line 21 on the array base palte, adjacent grid line 22 and data line 21 have defined pixel region, each pixel region is formed with a thin film transistor (TFT) (TFT), bar shaped pixel electrode 24 and public electrode 25, when not powering up, there is not electric field between pixel electrode 24 and the public electrode 25, liquid crystal molecule 26 do not deflect (shown in dotted portion liquid crystal molecule among Figure 19), when powering up, form horizontal component of electric field between pixel electrode 24 and the public electrode 25, liquid crystal molecule is along the direction of electric field deflect (shown in solid line part liquid crystal molecule among Figure 19).Be liquid crystal deflecting element synoptic diagram among Figure 19 as shown in figure 20, color membrane substrates 30 and 28 pairs of box settings of array base palte, the centre is filled with liquid crystal layer, be formed with public electrode 25 and pixel electrode 24 on the array base palte 28, be one deck insulation film 29 between public electrode 25 and the pixel electrode 24, form horizontal component of electric field 27 between public electrode 25 and the pixel electrode 24, power up back liquid crystal molecule 26 and deflect along direction of an electric field.
From Figure 19 and Figure 20 as can be seen, after powering up, in a pixel region, the electric field action that the diverse location liquid crystal molecule is subjected to varies in size, the angular dimension of liquid crystal deflecting element is also just different, but each liquid crystal molecule all be with a kind of mode in deflection, be unfavorable for offsetting the optical path difference of liquid crystal molecule, thus be unfavorable for eliminating effectively color drift (color drift be meant from different view to color inconsistent) and enlarge the visual angle.
Be the another kind of structural plan figure of prior art FFS type TFT-LCD array base palte as shown in figure 21, the difference of Figure 21 and array base palte shown in Figure 20 is: among Fig. 3 pattern of pixel electrodes made " people " font, after powering up, liquid crystal molecule can carry out the deflection of dual mode, promptly formed the liquid crystal mode of operation on two farmlands, can further eliminate color drift like this and further enlarge the visual angle.
In theory, the farmland number increases and helps enlarging the visual angle and eliminate color drift, but FFS type array base palte shown in Figure 21 also can't be eliminated color drift ideally and further enlarge the visual angle.Usually, LCD for normal black pattern, when not powering up, also have less voltage difference between pixel electrode and the public electrode, for array base palte shown in Figure 21, because pattern of pixel electrodes is " people " font, the direction of an electric field that forms between pixel electrode and the public electrode when not powering up is more consistent, so liquid crystal molecule has significantly deflection, thereby cause light leakage phenomena to produce, when promptly not powering up also liquid crystal molecule because small deflection causes that light transmission is arranged.
Summary of the invention
The objective of the invention is problem, a kind of FFS type TFT-LCD array base palte and manufacture method thereof are provided, the multidomain liquid crystal mode of operation can be provided, enlarge the visual angle, eliminate color drift, and can effectively eliminate light leakage phenomena at the prior art existence.
To achieve these goals, the invention provides a kind of FFS type TFT-LCD array base palte, comprise grid line and data line, be formed with pixel electrode, public electrode and thin film transistor (TFT) in the pixel region that described grid line and data line limit, offer on described pixel electrode and/or the public electrode and make the bar-shaped trough that forms several stairsteppings between pixel electrode and the public electrode, described bar-shaped trough comprise 2 folding shape structures at least with a plurality of direction horizontal component of electric fields.
To achieve these goals, the present invention also provides a kind of FFS type TFT-LCD manufacturing method of array base plate, it is characterized in that, comprising:
Step 2, on the substrate of completing steps 1 deposition layer of transparent conductive film, form pattern of pixel electrodes by composition technology, described pixel electrode is connected with drain electrode by passivation layer via hole, offer on the described pixel electrode and make the bar-shaped trough that forms several stairsteppings of a plurality of direction horizontal component of electric fields between pixel electrode and the public electrode, described bar-shaped trough comprise 2 folding shape structures at least.
FFS type TFT-LCD array base palte provided by the invention and manufacture method thereof, the figure of the bar-shaped trough by pixel electrode being arranged to comprise a plurality of stairsteppings can provide the multidomain liquid crystal mode of operation, enlarges the visual angle, eliminates color drift.And the figure of the bar-shaped trough by pixel electrode being arranged to comprise a plurality of stairsteppings, LCD for normal black pattern, when not powering up, form the electric field that comprises a plurality of directions between pixel electrode and the public electrode, the electric field of a plurality of directions influences each other, make liquid crystal molecule be unlikely the deflection of generation, thereby can effectively eliminate light leakage phenomena than wide-angle.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 a is the planimetric map after FFS type TFT-LCD array base palte first embodiment composition technology first time of the present invention;
Fig. 1 b be among Fig. 1 a A1-A1 to sectional view;
Fig. 2 a is the planimetric map after FFS type TFT-LCD array base palte first embodiment composition technology first time of the present invention;
Fig. 2 b be among Fig. 2 a A2-A2 to sectional view
Fig. 3 a is the planimetric map after FFS type TFT-LCD array base palte first embodiment composition technology second time of the present invention;
Fig. 3 b be among Fig. 3 a A3-A3 to sectional view;
Fig. 4 a is FFS type TFT-LCD array base palte first embodiment of the present invention planimetric map after the composition technology for the third time;
Fig. 4 b be among Fig. 4 a A4-A4 to sectional view;
Fig. 5 a is the planimetric map after the 4th composition technology of FFS type TFT-LCD array base palte first embodiment of the present invention;
Fig. 5 b be among Fig. 5 a A5-A5 to sectional view;
Fig. 6 a is the floor map of FFS type TFT-LCD array base palte second embodiment of the present invention;
Fig. 6 b be among Fig. 6 a B1-B1 to cut-open view;
Fig. 7 is the floor map of FFS type TFT-LCD array base palte the 3rd embodiment of the present invention;
Fig. 8 is the planimetric map after FFS type TFT-LCD array base palte the 3rd embodiment composition technology first time of the present invention;
Fig. 9 is the planimetric map after FFS type TFT-LCD array base palte the 3rd embodiment composition technology second time of the present invention;
Figure 10 is FFS type TFT-LCD array base palte the 3rd embodiment of the present invention planimetric map after the composition technology for the third time;
Figure 11 is the floor map of FFS type TFT-LCD array base palte the 4th embodiment of the present invention;
The synoptic diagram of liquid crystal rotation when Figure 12 works for FFS type TFT-LCD array base palte of the present invention;
Figure 13 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate of the present invention;
Figure 14 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate first embodiment of the present invention;
Figure 15 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate second embodiment of the present invention;
Figure 16 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate the 3rd embodiment of the present invention;
Figure 17 is the process flow diagram of IPS type TFT-LCD manufacturing method of array base plate the 4th embodiment of the present invention;
Figure 18 is the process flow diagram of IPS type TFT-LCD manufacturing method of array base plate the 5th embodiment of the present invention;
Figure 19 shows that a kind of structural plan figure of prior art FFS type TFT-LCD array base palte;
Figure 20 shows that liquid crystal deflecting element synoptic diagram among Figure 19;
Shown in Figure 21 is the another kind of structural plan figure of prior art FFS type TFT-LCD array base palte.
Embodiment
Fig. 1 a is the planimetric map of FFS type TFT-LCD array base palte first embodiment of the present invention, Fig. 1 b be among Fig. 1 a A1-A1 to sectional view.The structure of this embodiment F FS type TFT-LCD array base palte comprises grid line 3a and data line 7c, be formed with pixel electrode 9a, public electrode 2a and TFT in the pixel region that grid line 3a and data line 7c limit, TFT comprises gate electrode 3b, source electrode 7a and drain electrode 7b, gate electrode 3b is formed on substrate 1, and is connected with grid line 3a; Gate insulation layer 4 is formed on gate electrode 3b and goes up and cover whole base plate 1; The active layer of being made up of semiconductor layer 5 and doping semiconductor layer 6 is formed on the gate insulation layer 4 and is positioned at the top of gate electrode 3b; Source electrode 7a is formed on the doping semiconductor layer 6, one end is positioned at the top of gate electrode 3b, the other end is connected with data line 7c, drain electrode 7b is formed on the doping semiconductor layer 6, and an end is positioned at the top of gate electrode 3b, and the other end is connected with pixel electrode 9a, form the TFT channel region between source electrode 7a and the drain electrode 7b, the doping semiconductor layer 6 of TFT channel region is etched away fully, and etches away the semiconductor layer 5 of segment thickness, and the semiconductor layer 5 of TFT channel region is come out; Passivation layer 8 is formed on source electrode 7a, drain electrode 7b and the TFT channel region and covers whole base plate 1, offers the passivation layer via hole 8a that pixel electrode 9a is connected with drain electrode 7b in drain electrode 7b position.When applying voltage on the gate electrode 3b, can make source electrode 7a and drain electrode 7b conducting.Offer the bar-shaped trough of several stairsteppings on the pixel electrode 9a, each bar-shaped trough comprises 2 folding shape structures at least, makes between the pixel electrode 9a of the bar-shaped trough that is provided with stairstepping and the public electrode 2a and forms the horizontal component of electric field with a plurality of directions.Particularly, several step-like bar-shaped troughs comprise the first bar-shaped trough 10a and several the second bar-shaped trough 10b that extends along second direction Q that several extend along first direction M, wherein several first pixel bar-shaped troughs 10a is set in parallel in a side (as upside) of pixel region, several second pixel bar-shaped troughs 10b is set in parallel in the opposite side (as downside) of pixel region, and the first pixel bar-shaped trough 10a and the second pixel bar-shaped trough 10b are about center line O symmetry, promptly equal to make the first pixel bar-shaped trough 10a and the second pixel bar-shaped trough 10b in pixel region, constitute " people " font structure from the counterclockwise angle in second direction Q edge to the center line direction from first direction M along clockwise angle to center line 0 direction.In the practical application, center line O can be the horizontal line on the array base palte, also can be perpendicular line, can also be to have the oblique line of setting angle with horizontal direction.
Fig. 2 a～Fig. 5 b is the synoptic diagram of the FFS type TFT-LCD array base palte first embodiment preparation process of the present invention, further specify the technical scheme of present embodiment below by the preparation process of this embodiment, in the following description, the alleged composition technology of the present invention comprises technologies such as photoresist coating, mask, exposure, etching, photoresist lift off, and wherein photoresist is example with the positive photoresist.
Fig. 2 a is FFS type TFT-LCD array base palte first embodiment of the present invention planimetric map after the composition technology for the first time, Fig. 2 b be among Fig. 2 a A2-A2 to sectional view.Adopt magnetron sputtering, thermal evaporation or other film build method, deposition layer of transparent conductive film on substrate 1, substrate 1 can adopt glass substrate or quartz base plate, and the material of transparent conductive film can use tin indium oxide (ITO) or indium zinc oxide (IZO), or other macromolecule transparent material.Use the normal masks plate transparent conductive film to be carried out composition, on substrate, form the figure of public electrode 2a, shown in Fig. 2 a and Fig. 2 b by composition technology.
Fig. 3 a is FFS type TFT-LCD array base palte first embodiment of the present invention planimetric map after the composition technology for the second time, Fig. 3 b be among Fig. 3 a A3-A3 to sectional view.On the substrate of finishing figure shown in Fig. 2 a, adopt magnetron sputtering, thermal evaporation or other film build method, deposition one deck grid metallic film on substrate 1, the material of grid metallic film can use metals such as molybdenum, aluminium, aluminium neodymium alloy, tungsten, chromium, copper, or the multilayer film of above metal composition.Use the normal masks plate grid metallic film to be carried out composition, on substrate 1, form the figure of grid line 3a and gate electrode 3b, shown in Fig. 3 a and Fig. 3 b by composition technology.
Fig. 4 a is FFS type TFT-LCD array base palte first embodiment of the present invention planimetric map after the composition technology for the third time, Fig. 4 b be among Fig. 4 a A4-A4 to sectional view.On the substrate of finishing figure shown in Fig. 3 a, adopt chemical vapor deposition or other film build method to deposit gate insulation layer film, semiconductor layer film and doped semiconductor layer film successively.Adopt magnetron sputtering, thermal evaporation or other film build method deposition one deck source to leak metallic film then, the source leak metallic film material can use metals such as molybdenum, aluminium, aluminium neodymium alloy, tungsten, chromium, copper, or the multilayer film formed of above metal.Adopt shadow tone or gray mask plate to leak metallic film and carry out composition by double thin film conductor layer of composition technology, doped semiconductor layer film and source, form data line 7c, source electrode 7a, drain electrode 7b and TFT channel region figure, wherein, gate insulation layer 4 is formed on gate electrode 3b and goes up and cover whole base plate 1; The active layer of being made up of semiconductor layer 5 and doping semiconductor layer 6 is formed on the gate insulation layer 4 and is positioned at the top of gate electrode 3b; Source electrode 7a is formed on the doping semiconductor layer 6, one end is positioned at the top of gate electrode 3b, the other end is connected with data line 7c, drain electrode 7b is formed on the doping semiconductor layer 6, one end is positioned at the top of gate electrode 3b, electrode 7a is oppositely arranged with the source, form the TFT channel region between source electrode 7a and the drain electrode 7b, the doping semiconductor layer 6 of TFT channel region is etched away fully, and etch away the semiconductor layer 5 of segment thickness, the semiconductor layer 5 of TFT channel region is come out, shown in Fig. 4 a and Fig. 4 b.
Present embodiment composition technology for the third time is a kind of multistep etching technics, with form active layer in four composition technologies of prior art, data line, the source electrode, drain electrode is identical with the process of TFT channel region figure, technological process is specially: at first leak coating one deck photoresist on the metallic film in the source, adopt shadow tone or gray mask plate that photoresist is exposed, make photoresist form complete exposure area, unexposed area and half exposure area, wherein unexposed area is corresponding to data line, the source electrode, the figure region of drain electrode, half exposure area is corresponding to the figure region of TFT channel region, and complete exposure area is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the photoresist thickness of unexposed area does not change, and forms the complete reserve area of photoresist, the photoresist of complete exposure area is removed fully, form photoresist and remove the zone fully, the photoresist thickness attenuation of half exposure area forms photoresist half reserve area.Leak metallic film, doped semiconductor layer film and semiconductor layer film by the source that the first time, etching technics etched away complete exposure area fully, form the figure of active layer and data line.By cineration technics, remove the photoresist of half exposure area, expose this regional source and leak metallic film.Leak metallic film and doped semiconductor layer film by the source that the second time, etching technics etched away half exposure area fully, and etch away the semiconductor layer film of segment thickness, expose the semiconductor layer film, form the figure of source electrode, drain electrode and TFT channel region.Peel off remaining photoresist at last, finish present embodiment composition technology for the third time.
Fig. 5 a is the planimetric map after the 4th composition technology of FFS type TFT-LCD array base palte first embodiment of the present invention, Fig. 5 b be among Fig. 5 a A5-A5 to sectional view.On the substrate of finishing figure shown in Fig. 4 a, adopt chemical vapor deposition or other film build method deposition one deck passivation layer 8, the material of passivation layer film can be for silicon nitride (SiNx) etc.Use the normal masks plate passivation layer film to be carried out composition, form the figure of passivation layer via hole 8a in drain electrode 7b position, shown in Fig. 5 a and Fig. 5 b by composition technology.
At last, on the substrate of finishing figure shown in Fig. 5 a, adopt magnetron sputtering, thermal evaporation or other film build method deposition layer of transparent conductive film, the material of transparent conductive film can use tin indium oxide (ITO) or indium zinc oxide (IZO), or other macromolecule transparent material.Use the normal masks plate to form pixel electrode 9a figure at pixel region by composition technology, pixel electrode 9a is connected with drain electrode 7b by passivation layer via hole 8a, and offer several bar-shaped troughs on the pixel electrode 9a, each bar-shaped trough is a stepped appearance, pixel electrode in the pixel bar-shaped trough is etched away, expose the public electrode 2a of pixel electrode below, shown in Fig. 1 a and 1b.Particularly, several step-like bar-shaped troughs comprise the first pixel bar-shaped trough 10a and several the second pixel bar-shaped trough 10b that extends along second direction Q that several extend along first direction M, wherein several first bar-shaped troughs 10a is set in parallel in a side (as upside) of pixel region, several second pixel bar-shaped troughs 10b is set in parallel in the opposite side (as downside) of pixel region, and the first pixel bar-shaped trough 10a and the second pixel bar-shaped trough 10b are about center line O symmetry, promptly equal to make the first bar-shaped trough 10a and the second bar-shaped trough 10b in pixel region, constitute " people " font structure from the counterclockwise angle in second direction Q edge to center line O direction from first direction M along clockwise angle to center line O direction.
First embodiment of the invention provides a kind of FFS type TFT-LCD array base palte, by on pixel electrode, offering several step-like bar-shaped troughs, make and form the horizontal component of electric field that comprises a plurality of directions between pixel electrode and the public electrode, the multidomain liquid crystal mode of operation can be provided, enlarge the visual angle, eliminate color drift.In addition, for the LCD of normal black pattern, when not powering up, the electric field of a plurality of directions influences each other between pixel electrode and the public electrode, make liquid crystal molecule be unlikely the deflection of generation than wide-angle, so present embodiment can effectively be eliminated light leakage phenomena.
Fig. 6 a is the floor map of FFS type TFT-LCD array base palte second embodiment of the present invention, Fig. 6 b be among Fig. 6 a B1-B1 to cut-open view.The agent structure of present embodiment FFS type TFT-LCD array base palte is identical with the aforementioned first embodiment major part, repeats no more, and difference is that the material of public electrode 2a is identical with the material of grid line among second embodiment.
The process that forms public electrode and grid line among second embodiment is as follows: deposition one deck grid metallic film on substrate 1, use the normal masks plate by the first time composition technology grid metallic film is carried out composition, on substrate 1, form grid line 3a, gate electrode 3b and public electrode 2a figure.
Because the public electrode of present embodiment adopts and the grid line identical materials, therefore can reduce composition technology one time, relatively be suitable for the less demanding LCD of aperture opening ratio.
Fig. 7 is the floor map of FFS type TFT-LCD array base palte the 3rd embodiment of the present invention, the difference part of the FFS type TFT-LCD array base palte shown in the present embodiment and second embodiment is: among the 3rd embodiment, also offer the bar-shaped trough of several stairsteppings on the public electrode 2a.
Fig. 8 is the planimetric map after FFS type TFT-LCD array base palte the 3rd embodiment composition technology first time of the present invention.Deposition one deck grid metallic film on substrate 1, use the normal masks plate by the first time composition technology grid metallic film is carried out composition, on substrate 1, form grid line 3a, gate electrode 3b and public electrode 2a figure, also offer several step-like bar-shaped troughs on the public electrode 2a, particularly, several step-like bar-shaped troughs comprise the first public bar-shaped trough 10c and several the second public bar-shaped trough 10d that extends along second direction Q that several extend along first direction M, wherein several first public bar-shaped trough 10c are set in parallel in a side (as upside) of pixel region, several second public bar-shaped trough 10d are set in parallel in the opposite side (as downside) of pixel region, and the first public bar-shaped trough 10c and the second pixel bar-shaped trough 10d are about center line O symmetry, promptly equal to make the first public bar-shaped trough 10c and the second public bar-shaped trough 10d in pixel region, constitute " people " font structure from the counterclockwise angle in second direction Q edge to center line O direction from first direction M along clockwise angle to center line O direction.In the practical application, center line O can be a horizontal line, also can be perpendicular line, can also be to have the oblique line of setting angle with horizontal direction.
Fig. 9 is the planimetric map after FFS type TFT-LCD array base palte the 3rd embodiment composition technology second time of the present invention.Finish on the substrate of figure shown in Figure 8, deposit gate insulation layer film, semiconductor layer film, doped semiconductor layer film and source successively and leak metallic film.Adopt shadow tone or gray mask plate to leak metallic film and carry out composition by double thin film conductor layer of the composition technology second time, doped semiconductor layer film and source, on substrate, form data line 7c, source electrode 7a, drain electrode 7b and TFT channel region figure, wherein the doped semiconductor layer film 6 between source electrode 7a and the drain electrode 7b is etched away fully, exposes semiconductor layer film 5.
Figure 10 is FFS type TFT-LCD array base palte the 3rd embodiment of the present invention planimetric map after the composition technology for the third time.Finish on the substrate of figure shown in Figure 12, deposition one deck passivation layer film 8 uses the normal masks plate by composition technology for the third time the passivation layer film to be carried out composition, forms the figure of passivation layer via hole 8a in drain electrode 7b position.
At last, finish on the substrate of figure shown in Figure 10, deposition layer of transparent conductive film uses the normal masks plate to form pixel electrode 9a figure by the 4th composition technology at pixel region, and pixel electrode 9a is connected as shown in Figure 7 with drain electrode 7b by passivation layer via hole 8a.Wherein, the figure of pixel electrode 9a comprises several step-like bar-shaped troughs.Particularly, several step-like bar-shaped troughs comprise the first bar-shaped trough 10a and several the second bar-shaped trough 10b that extends along second direction Q that several extend along first direction M, wherein several first pixel bar-shaped troughs 10a is set in parallel in a side (as upside) of pixel region, several second pixel bar-shaped troughs 10b is set in parallel in the opposite side (as downside) of pixel region, and the first pixel bar-shaped trough 10a and the second pixel bar-shaped trough 10b are about center line O symmetry, be first angle along clockwise angle promptly to center line O direction from first direction M, is second angle from second direction Q along counterclockwise angle to center line O direction, and first angle equals second angle, makes the first pixel bar-shaped trough 10a and the second pixel bar-shaped trough 10b constitute " people " font structure in pixel region.Public electrode and pattern of pixel electrodes include several step-like bar-shaped troughs among the 3rd embodiment, the first public bar-shaped trough on the public electrode and the second public bar-shaped trough, be provided with at interval with the first pixel bar-shaped trough and the second pixel bar-shaped trough on the pixel electrode, to guarantee to form horizontal component of electric field between public electrode and the pixel electrode.
In the preparation process of above-mentioned three example I PS type TFT-LCD array base paltes, wherein active layer, source electrode, drain electrode and TFT channel region figure preparation technology have adopted the multistep etching technics.In actual use, the technology of composition for the third time in the previous embodiment also can adopt the normal masks plate to finish by secondary composition technology, promptly form active layer, adopt the composition technology of normal masks plate to form data line, source electrode, drain electrode and TFT channel region figure by another time by the composition technology that once adopts the normal masks plate.Particularly, at first adopt chemical vapor deposition or other film build method to deposit gate insulation layer film, semiconductor layer film and doped semiconductor layer film successively, use double thin film conductor layer of normal masks plate and doped semiconductor layer film to carry out composition, form active layer pattern.Adopt magnetron sputtering, thermal evaporation or other film build method deposition one deck source to leak metallic film afterwards, use the normal masks plate that metallic film is leaked in the source and carry out composition, form data line, source electrode, drain electrode and TFT channel region figure.
In addition, the process that forms public electrode, grid line and gate electrode figure among first embodiment also can adopt composition technology one time.Particularly, at first adopt magnetron sputtering, thermal evaporation or other film build method deposit transparent conductive film and grid metallic film successively on substrate, adopt shadow tone or gray mask plate that photoresist is exposed then, make photoresist form complete exposure area, half exposure area and unexposed area, wherein unexposed area is corresponding to grid line and gate electrode figure region, half exposure area is corresponding to the common pattern of electrodes region, complete exposure area corresponding to above-mentioned figure with exterior domain; After the development treatment, the photoresist of complete exposure area is removed fully, and the photoresist of unexposed area keeps fully, the thickness attenuation of half exposure area photoresist; By the first time etching technics etch away the grid metallic film and the transparent conductive film of complete exposure area, form grid line and gate electrode figure; Remove the photoresist of half exposure area by cineration technics, comprise the grid metallic film that this is regional; By the second time etching technics etch away the grid metallic film, make remaining transparent conductive film form common pattern of electrodes, wherein grid line and gate electrode below remains with transparent conductive film.
Figure 11 shows that the floor map of FFS type TFT-LCD array base palte the 4th embodiment of the present invention, among the 4th embodiment, the first pixel bar-shaped trough 10a in the pattern of pixel electrodes extends along first direction M, the 3rd pixel bar-shaped trough 10e extends along third direction N, be not equal to from third direction N along counterclockwise angle from first direction M along clockwise angle to center line O direction to center line O direction, is first angle from first direction M along clockwise angle to center line O direction, is the 3rd angle from third direction N along counterclockwise angle to center line O direction, and promptly the first pixel bar-shaped trough 10a and the 3rd pixel bar-shaped trough 10e are not about center line O symmetry.Like this can be so that liquid crystal molecule forms more farmland number.First angle and the 3rd angle are spent less than 90 greater than 0 degree.
The synoptic diagram of liquid crystal deflection when Figure 12 works for FFS type TFT-LCD array base palte of the present invention.As shown in figure 12, pixel electrode 9a and public electrode 2a form parabola shaped horizontal component of electric field, and the plane that para-curve forms is perpendicular to pixel electrode 9a.Pixel electrode 9a goes up the part that bar-shaped trough is parallel to (bar-shaped trough on the pixel electrode can comprise first bar-shaped trough and second bar-shaped trough) the horizontal direction x of array base palte herein, and forms the first electric field b between the public electrode 2a; Pixel electrode 9a goes up the part that is parallel to the vertical direction y of array base palte in the bar-shaped trough, and forms the second electric field a between the public electrode 2a; Pixel electrode 9a goes up the intersection that bar-shaped trough is parallel to the part of horizontal direction x and is parallel to the part of vertical direction y, and forms the 3rd electric field c between the public electrode 2a.Each electric field can both make liquid crystal molecule that a kind of deflection of mode takes place, and promptly forms a farmland.With the array base palte shown in Fig. 1 a is example, pattern of pixel electrodes comprises along first pixel bar-shaped trough of first direction M extension and the second pixel bar-shaped trough that extends along second direction, principle according to the liquid crystal deflection of introducing above, the electric field that forms between pixel electrode and the public electrode comprises four kinds of electric fields, be respectively: in the first pixel bar-shaped trough and the second pixel bar-shaped trough and the electric field that forms between the part of the horizontal direction parallel of array base palte and the public electrode, the electric field that forms between part parallel and the public electrode in the first pixel bar-shaped trough and the second pixel bar-shaped trough with the vertical direction of array base palte, the electric field (comprising two kinds) that forms between the intersection of the part of the first pixel bar-shaped trough and the second pixel bar-shaped trough and the horizontal direction parallel of array base palte and the part parallel and the public electrode with vertical direction, so in the array base palte shown in Fig. 1 a, liquid crystal molecule can form four farmlands.For array base palte as shown in figure 11, figure on the pixel electrode comprises along first pixel bar-shaped trough of first direction extension and the 3rd pixel bar-shaped trough that extends along third direction, so can form six kinds of electric fields between pixel electrode and the public electrode, liquid crystal molecule can form six farmlands.
Among each embodiment provided by the invention, compare for the array base palte of " people " font with pixel electrode figure in the prior art, the manufacture craft difficulty of array base palte does not increase, but by pattern of pixel electrodes being arranged to comprise a plurality of bar-shaped troughs, each bar-shaped trough comprises 2 folding shape structures at least, can make liquid crystal molecule form four farmlands at least, can more effective expansion visual angle, eliminate color drift.
Figure 13 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate of the present invention, specifically comprises:
Further specify the technical scheme of FFS type TFT-LCD manufacturing method of array base plate of the present invention below by specific embodiment.
Figure 14 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate first embodiment of the present invention, specifically comprises:
The specific implementation process of step 111～step 115 is referring to the description for Fig. 1 a～5b array base palte manufacturing process.
Figure 15 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate second embodiment of the present invention, specifically comprises:
The main flow process of the present embodiment and first embodiment is basic identical, and difference has been to adopt the technology for preparing active layer and TFT channel region figure respectively, and the step 113 that is about among aforementioned first embodiment is divided into two composition technologies.Particularly, after forming gate electrode, grid line and common pattern of electrodes, adopt chemical vapor deposition or other film build method to deposit gate insulation layer film, semiconductor layer film and doped semiconductor layer film successively earlier, use double thin film conductor layer of normal masks plate and doped semiconductor layer film to carry out composition, form active layer pattern.Adopt magnetron sputtering, thermal evaporation or other film build method deposition one deck source to leak metallic film afterwards, use the normal masks plate that metallic film is leaked in the source and carry out composition, form data line, source electrode, drain electrode and TFT channel region figure.Other manufacture process is identical with aforementioned first embodiment, repeats no more.
Figure 16 is the process flow diagram of FFS type TFT-LCD manufacturing method of array base plate the 3rd embodiment of the present invention, specifically comprises:
The specific implementation process of step 131～step 134 is referring to the description for Fig. 6 a array base palte manufacturing process.
Figure 17 is the process flow diagram of IPS type TFT-LCD manufacturing method of array base plate the 4th embodiment of the present invention, specifically comprises:
The main flow process of present embodiment and the 3rd embodiment is basic identical, difference has been to adopt the technology for preparing active layer and TFT channel region figure respectively, the step 132 that is about among aforementioned the 3rd embodiment is divided into two composition technologies, and two composition technologies illustrate in aforementioned second embodiment.
Figure 18 is the process flow diagram of IPS type TFT-LCD manufacturing method of array base plate the 5th embodiment of the present invention, specifically comprises:
Step 151, at first adopt magnetron sputtering, thermal evaporation or other film build method deposit transparent conductive film and grid metallic film successively on substrate, adopt shadow tone or gray mask plate that photoresist is exposed then, make photoresist form complete exposure area, half exposure area and unexposed area, wherein unexposed area is corresponding to grid line and gate electrode figure region, half exposure area is corresponding to the common pattern of electrodes region, complete exposure area corresponding to above-mentioned figure with exterior domain; After the development treatment, the photoresist of complete exposure area is removed fully, and the photoresist of unexposed area keeps fully, the thickness attenuation of half exposure area photoresist; By the first time etching technics etch away the grid metallic film and the transparent conductive film of complete exposure area, form grid line and gate electrode figure; Remove the photoresist of half exposure area by cineration technics, comprise the grid metallic film that this is regional; By the second time etching technics etch away the grid metallic film, make remaining transparent conductive film form common pattern of electrodes, wherein grid line and gate electrode below remains with transparent conductive film.
Step 152, on the substrate of completing steps 151, deposit gate insulation layer film, semiconductor layer film, doped semiconductor layer film successively and metallic film is leaked in the source, adopt shadow tone or gray mask plate by composition technology, on substrate, form source electrode, drain electrode, TFT channel region figure and data line figure;
Step 153, on the substrate of completing steps 152 deposition one deck passivation layer film, form the passivation layer via hole figure in the drain electrode position by composition technology;
Step 154, on the substrate of completing steps 153 deposition layer of transparent conductive film, form the pixel electrode figure by composition technology, pixel electrode is connected with drain electrode by passivation layer via hole, pattern of pixel electrodes comprises the bar-shaped trough of a plurality of stairsteppings, and this bar-shaped trough comprises 2 folding shape structures at least.
Among four embodiment of above FFS type TFT-LCD manufacturing method of array base plate, except the shape of pixel electrode can comprise a plurality of bar-shaped troughs that the figure of public electrode also can comprise the bar-shaped trough of a plurality of stairsteppings, bar-shaped trough comprises 2 folding shape structures at least.
The invention provides a kind of FFS type TFT-LCD manufacturing method of array base plate, the pixel electrode that comprises the bar-shaped trough of a plurality of stairsteppings by formation, make the FFS type TFT-LCD array base palte of manufacturing of the present invention in a pixel region, form multidomain structure, thereby can eliminate color drift, further enlarge the visual angle.And can improve light leakage phenomena.
It should be noted that at last: above embodiment is only in order to technical scheme of the present invention to be described but not limit it, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that: it still can make amendment or be equal to replacement technical scheme of the present invention, and these modifications or be equal to replacement and also can not make amended technical scheme break away from the spirit and scope of technical solution of the present invention.
Claims (12)
1. FFS type TFT-LCD array base palte, comprise grid line and data line, be formed with pixel electrode, public electrode and thin film transistor (TFT) in the pixel region that described grid line and data line limit, it is characterized in that, offer on described pixel electrode and/or the public electrode and make the bar-shaped trough that forms several stairsteppings between pixel electrode and the public electrode, described bar-shaped trough comprise 2 folding shape structures at least with a plurality of direction horizontal component of electric fields.
2. FFS type TFT-LCD array base palte according to claim 1, it is characterized in that, described bar-shaped trough is opened on the pixel electrode, comprise along step-like several first pixel bar-shaped troughs of first direction extension and step-like several the second pixel bar-shaped troughs that extend along second direction, several first pixel bar-shaped troughs are set in parallel in a side of pixel region, several second pixel bar-shaped troughs are set in parallel in the opposite side of pixel region, make the first pixel bar-shaped trough and the second pixel bar-shaped trough constitute " people " font structure in pixel region.
3. FFS type TFT-LCD array base palte according to claim 1, it is characterized in that, described bar-shaped trough is opened in respectively on pixel electrode and the public electrode, several bar-shaped troughs on the pixel electrode comprise along step-like several first pixel bar-shaped troughs of first direction extension and step-like several the second pixel bar-shaped troughs that extend along second direction, several first pixel bar-shaped troughs are set in parallel in a side of pixel region, several second pixel bar-shaped troughs are set in parallel in the opposite side of pixel region, make the first pixel bar-shaped trough and the second pixel bar-shaped trough constitute " people " font structure in pixel region; Several bar-shaped troughs on the public electrode comprise along step-like several first public bar-shaped troughs of first direction extension and step-like several the second public bar-shaped troughs that extend along second direction, several first public bar-shaped troughs are set in parallel in a side of pixel region, several second public bar-shaped troughs are set in parallel in the opposite side of pixel region, make the first public bar-shaped trough and the second public bar-shaped trough constitute " people " font structure in pixel region; Bar-shaped trough on the described pixel electrode and the bar-shaped trough on the public electrode are provided with at interval.
4. according to claim 2 or 3 described FFS type TFT-LCD array base paltes, it is characterized in that, equal from described second direction along counterclockwise angle along clockwise angle to the center line direction to the center line direction from described first direction.
5. according to claim 2 or 3 described FFS type TFT-LCD array base paltes, it is characterized in that, is first angle from described first direction along clockwise angle to the center line direction, is second angle from described second direction along counterclockwise angle to described center line direction, and described first angle and second angle are spent less than 90 greater than 0 degree.
6. FFS type TFT-LCD array base palte according to claim 1 is characterized in that, described public electrode and grid line are with in composition technology or form in the secondary composition technology.
7. a FFS type TFT-LCD manufacturing method of array base plate is characterized in that, comprising:
Step 1, on substrate, form the figure comprise grid line, gate electrode, public electrode, data line, source electrode, drain electrode, TFT channel region and passivation layer via hole;
Step 2, on the substrate of completing steps 1 deposition layer of transparent conductive film, form pattern of pixel electrodes by composition technology, described pixel electrode is connected with drain electrode by passivation layer via hole, offer on the described pixel electrode and make the bar-shaped trough that forms several stairsteppings of a plurality of direction horizontal component of electric fields between pixel electrode and the public electrode, described bar-shaped trough comprise 2 folding shape structures at least.
8. FFS type TFT-LCD manufacturing method of array base plate according to claim 7 is characterized in that described step 1 comprises:
Step 11, on substrate deposition layer of transparent conductive film, adopt the normal masks plate to form the figure of public electrode by composition technology;
Step 12, on the substrate of completing steps 11 deposition one deck grid metallic film, adopt the normal masks plate to form the figure of gate electrode and grid line by composition technology;
Step 13, on the substrate of completing steps 12, deposit gate insulation layer film, semiconductor layer film, doped semiconductor layer film successively and metallic film is leaked in the source, adopt shadow tone or gray mask plate to form the figure of active layer, data line, source electrode, drain electrode and TFT channel region by composition technology;
Step 14, on the substrate of completing steps 13 deposit passivation layer, adopt the normal masks plate to form the figure of passivation layer via hole in the drain electrode position by composition technology.
9. FFS type TFT-LCD manufacturing method of array base plate according to claim 7 is characterized in that described step 1 comprises:
Step 21, on substrate, deposit layer of transparent conductive film and grid metallic film successively, adopt shadow tone or gray mask plate to form the figure of gate electrode, grid line and public electrode by composition technology;
Step 22, on the substrate of completing steps 21, deposit gate insulation layer film, semiconductor layer film, doped semiconductor layer film successively and metallic film is leaked in the source, adopt shadow tone or gray mask plate to form the figure of active layer, data line, source electrode, drain electrode and TFT channel region by composition technology;
Step 23, on the substrate of completing steps 22 the deposit passivation layer film, adopt the normal masks plate to form the figure of passivation layer via hole in the drain electrode position by composition technology.
10. FFS type TFT-LCD manufacturing method of array base plate according to claim 9 is characterized in that described step 21 comprises:
Step 211, on substrate deposit transparent conductive film and grid metallic film successively, adopt shadow tone or gray mask plate that photoresist is exposed, make photoresist form complete exposure area, half exposure area and unexposed area, wherein unexposed area is corresponding to grid line and gate electrode figure region, half exposure area is corresponding to the common pattern of electrodes region, complete exposure area corresponding to above-mentioned figure with exterior domain;
Step 212, by the first time etching technics etch away the grid metallic film and the transparent conductive film of complete exposure area, form grid line and gate electrode figure;
Step 213, remove the photoresist of half exposure area, expose this regional grid metallic film by cineration technics;
Step 214, by the second time etching technics etch away the grid metallic film, make remaining transparent conductive film form common pattern of electrodes, wherein grid line and gate electrode below remains with transparent conductive film.
11. FFS type TFT-LCD manufacturing method of array base plate according to claim 7 is characterized in that described step 1 comprises:
Step 31, on substrate deposition one deck grid metallic film, on substrate, form the figure of gate electrode, grid line and public electrode by composition technology;
Step 32, on the substrate of completing steps 31, deposit gate insulation layer film, semiconductor layer film, doped semiconductor layer film successively and metallic film is leaked in the source, adopt shadow tone or gray mask plate to form the figure of active layer, data line, source electrode, drain electrode and TFT channel region by composition technology;
Step 33, on the substrate of completing steps 32 the deposit passivation layer film, adopt the normal masks plate to form the figure of passivation layer via hole in the drain electrode position by composition technology.
12. according to the described FFS type of arbitrary claim TFT-LCD manufacturing method of array base plate in the claim 7～11, it is characterized in that, also offer on the public electrode that forms in the described step 1 and make the bar-shaped trough that forms several stairsteppings of a plurality of direction horizontal component of electric fields between pixel electrode and the public electrode, described bar-shaped trough comprise 2 folding shape structures at least.
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| CN103135290A (en) * | 2011-11-24 | 2013-06-05 | 东莞万士达液晶显示器有限公司 | Edge electric field switching type liquid crystal display board |
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| WO2013131384A1 (en) * | 2012-03-05 | 2013-09-12 | 京东方科技集团股份有限公司 | Thin-film transistor array substrate, manufacturing method therefor, and electronic device |
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| CN103135290A (en) * | 2011-11-24 | 2013-06-05 | 东莞万士达液晶显示器有限公司 | Edge electric field switching type liquid crystal display board |
| WO2013131384A1 (en) * | 2012-03-05 | 2013-09-12 | 京东方科技集团股份有限公司 | Thin-film transistor array substrate, manufacturing method therefor, and electronic device |
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| WO2014101331A1 (en) * | 2012-12-31 | 2014-07-03 | 信利半导体有限公司 | Wide-viewing-angle liquid crystal display and display method thereof |
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| WO2016106824A1 (en) * | 2014-12-30 | 2016-07-07 | 深圳市华星光电技术有限公司 | Pixel array structure and liquid crystal display panel |
| CN114019733A (en) * | 2017-06-12 | 2022-02-08 | 株式会社日本显示器 | Display device |
| CN109407380A (en) * | 2018-12-05 | 2019-03-01 | 惠科股份有限公司 | A kind of display panel and its production method and display device |
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