CN101844872A - Flocking liquid and preparation method thereof - Google Patents

Flocking liquid and preparation method thereof Download PDF

Info

Publication number
CN101844872A
CN101844872A CN 201010172595 CN201010172595A CN101844872A CN 101844872 A CN101844872 A CN 101844872A CN 201010172595 CN201010172595 CN 201010172595 CN 201010172595 A CN201010172595 A CN 201010172595A CN 101844872 A CN101844872 A CN 101844872A
Authority
CN
China
Prior art keywords
flocking
liquid
amyl alcohol
valeric acid
alcohol mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 201010172595
Other languages
Chinese (zh)
Other versions
CN101844872B (en
Inventor
周建国
马星雪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHANGHAI CHANGYUE COATING CO Ltd
Original Assignee
SHANGHAI CHANGYUE COATING CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANGHAI CHANGYUE COATING CO Ltd filed Critical SHANGHAI CHANGYUE COATING CO Ltd
Priority to CN2010101725950A priority Critical patent/CN101844872B/en
Publication of CN101844872A publication Critical patent/CN101844872A/en
Application granted granted Critical
Publication of CN101844872B publication Critical patent/CN101844872B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention belongs to the technical field of chemical industry, and relates to flocking liquid, in particular to flocking liquid applied in a flocking process of a process for manufacturing a solar cell; and meanwhile, the invention also discloses a preparation method for the flocking liquid. In order to solve the problems that etching liquid used in the conventional flocking process for manufacturing the solar cell contains low-boiling-point and easily volatile chemical substances such as isopropanol and the like and the chemical substances cause instability between batches of the flocking process during use and frequently produce a large amount of spotted plates to seriously affect the appearance and power generation efficiency of cell plates, the invention provides the flocking liquid. The flocking liquid comprises alkali capable of reacting with silicon, aqueous solution of silicate and mixture of amyl acid and amyl alcohol, wherein the mass ratio of the amyl acid to the amyl alcohol in the mixture of the amyl acid and the amyl alcohol is 3:1-2:1.

Description

A kind of flocking liquid and preparation method thereof
Technical field
The invention belongs to chemical technology field, relate to a kind of flocking liquid, particularly a kind of flocking liquid that in the flocking technique of making solar battery process, is applied to, the present invention has simultaneously also introduced the preparation method of flocking liquid.
Background technology
It is polycrystalline and monocrystalline solar cells that world today's silica-based solar cell can be divided into two big camps by the material differentiation.The flocking processing procedure is the first road technology in the solar cell processing procedure, also is very crucial together manufacturing process.Generally speaking the reflectivity for the silica-base material of solar cell is 30-35%, and meaning i.e. 100% solar energy projects silicon substrate surface, and the solar energy of the 30-35% that has an appointment is reflected, and can not effectively utilize the energy of this part sunlight.The main effect of flocking technique is minimum with regard to being that reflectivity with silica-base material drops to, in the hope of the energy that utilizes sunlight to provide to us of maximum range.
Flocking technique can be divided into sour processing procedure and alkali processing procedure by silica-base material at present.For the silicon single crystal silica-base material, traditional matte technology of main flow is the alkali processing procedure at present, its content is: utilize the aqueous solution of the potassium hydroxide (or sodium hydroxide) (20%) of high density to remove because the cutting vestige (or being called affected layer) that stays in the cutting process earlier, generally need to remove the silicon materials of 5-10 μ m left and right thickness, and then utilize the mixed aqueous solution of potassium hydroxide (or sodium hydroxide)+Virahol+water glass to form observable intensive pyramid under microcosmic in etching under 80 ℃ the temperature.Its reflectivity will be reduced to about 14%.That is to say and to have brought back the solar energy of 15-20% by the flocking processing procedure.But the greatest drawback of traditional alkali matte processing procedure is: because a large amount of Virahol that uses; and its lower boiling and volatile chemical property have caused the instability between flocking processing procedure batch; a large amount of so-called piebald sheets appear in Shi Changhui, and have a strong impact on the outward appearance and the generating efficiency of battery sheet.
General, solar battery sheet industry matte piebald can be controlled in about 2% in some big factories, but for those little factories or the still not mature enough producer of technology, the piebald rate is generally at 5-10%.
Summary of the invention
Lower boilings such as Virahol, volatile chemical substance that the flocking liquid that the technical problem that will solve required for the present invention is to use in the flocking technique of existing preparation solar cell contains; these chemical substances in use can cause the instability between flocking technique batch; and the time regular meeting a large amount of piebald sheets appears; thereby have a strong impact on the outward appearance of battery sheet and the problem of generating efficiency; and provide a kind of flocking liquid at this problem; in flocking technique, use flocking liquid of the present invention, can fundamentally solve the problems of the technologies described above at least.
Specifically, the present invention solves the problems of the technologies described above by the following technical programs:
A kind of flocking liquid, comprise can with alkali, silicate, defoamer and the water of pasc reaction, described defoamer is the valeric acid amyl alcohol mixture, the mass ratio of valeric acid and amylalcohol is 3: 1~2: 1 in the valeric acid amyl alcohol mixture.
Say as background technology part of the present invention, the mixed aqueous solution that utilizes potassium hydroxide (or sodium hydroxide)+Virahol+water glass is arranged with silicon chip etching under 80 ℃ temperature in the existing flocking technique, thereby form observable this step of intensive pyramid under the microcosmic on the silicon substrate surface, in this step, Virahol is a defoamer, is used for the hydrogen that the reaction of potassium hydroxide (or sodium hydroxide) and silicon chip is produced is taken away.Since the boiling point lower (82.6 ℃) of Virahol, therefore, the Virahol highly volatile.
And in actually operating, the temperature of the different sites of flocking groove can be subjected to the influence of temperature control precision unavoidably and height is inhomogeneous, also i.e. different sites in the flocking groove, and the volatilization degree of Virahol is not quite similar.If the temperature drift at some position, then the volatilization of Virahol is just bigger, thereby will cause the isopropyl alcohol concentration at these positions on the low side, make the silicon substrate etch rate of different sites also inconsistent (being the instability between flocking technique batch), finally form the colored sheet that naked eyes are seen at silicon chip surface.
The boiling point of the valeric acid amyl alcohol mixture that the present invention adopts generally is higher than 200 ℃, therefore, is enough to guarantee not volatilize in flocking technique.
Each component in the valeric acid amyl alcohol mixture of the present invention all has effect separately simultaneously, generally speaking, the adding of alcohols material (promptly referring to amylalcohol here) can effectively reduce the diagram of system surface tension, make that producing hydrogen can not be adsorbed on the silicon chip, the hydrogen deaeration that helps producing is discharged, thereby can play the froth breaking effect.And energy of the valeric acid in the valeric acid amyl alcohol mixture and potassium hydroxide reaction generate valeric acid potassium, and valeric acid potassium is adsorbed on silicon chip surface can effectively strengthen the anisotropy of potassium hydroxide to silicon chip erosion, the little pyramid structure of promptly easier formation.
In order to make each component in the valeric acid amyl alcohol mixture can fully play separately effect, the mass ratio of valeric acid and amylalcohol is 3: 1~2: 1 in the valeric acid amyl alcohol mixture, need be pointed out that further that all isomerss of valeric acid amylalcohol can be used to as valeric acid of the present invention and amylalcohol.
In fact, the effect of the valeric acid amyl alcohol mixture of introducing above, be enough to solve technical problem to be solved by this invention and (a large amount of piebald sheets arranged, thereby influence the efficiency of conversion of battery sheet), in general, use flocking liquid of the present invention to prepare solar cell, the transformation efficiency of its battery sheet can promote 0.2-0.5%.But the present invention finds some technique effects that bring other that the valeric acid amyl alcohol mixture can also be indirect, and one of them example is to use flocking liquid of the present invention can simplify the equipment of flocking technique:
Before the present invention, than higher, this is embodied in the flocking groove at least need be equipped with bubbling or groove internal circulation apparatus to flocking technique to the requirement of equipment, to high this two aspect of the stability requirement of bubbling or groove internal circulation apparatus.
For existing flocking technique, the purpose that installs high bubbling of stability or groove internal circulation apparatus additional is exactly the temperature height of different sites in the even flocking groove, so that Virahol can be volatilized uniformly at each position, thereby obtain the lower finished product of piebald rate.
The present invention with the valeric acid amyl alcohol mixture substitute Virahol as defoamer after, because the valeric acid amyl alcohol mixture has higher boiling point, do not exist in the easy evaporable problem of defoamer in the process of flocking technique running, the bubbling or the groove internal circulation apparatus that are equipped with in the therefore existing flocking groove just not have necessity of existence yet.
Another example is, uses flocking liquid of the present invention, can simplify traditional flocking technique:
Before the etching of carrying out silicon chip, often need to remove the affected layer that cutting stays, thus, the tradition flocking technique is provided with affected layer technology, get off like this, silicon substrate will be thinned about 30 μ m, and flocking liquid of the present invention can make the initial etch rate height very of silicon substrate (generally can reach about 3g/m 2Min), this has just played the polishing action of silicon substrate, can reach the technique effect identical with going affected layer technology equally, and the silicon substrate attenuate is general all within 15 μ m.
Therefore, by flocking liquid of the present invention, on the one hand, the affected layer technology of going in the existing flocking technique has not had necessity of setting; On the one hand, the attenuate quantity of silicon substrate can be reduced greatly, and having solved that the fragmentation rate in the technological process promotes after the silica-based film source thinning (is that silicon substrate is in etched back attenuation, insufficient strength, in subsequent handling, break easily) puzzlement, improved the battery bending tablet degree under the thin slice condition; On the one hand, from the angle of environmental protection, because the present invention says that in process of production the waste liquid of generation is 1/3rd (reduce greatly by the attenuate quantity of silicon substrate at least and realize) of traditional technology, so saved the cost of wastewater treatment greatly.
In sum, the technique effect that this technique means of valeric acid amyl alcohol mixture material substitution Virahol that the present invention takes is brought all can make the cost of flocking technique decline to a great extent, and in general, flocking production priming cost will reduce more than 35%.This is for the shortage of present solar cell silica-base material, under the high situation of price, acquires a special sense.
Except the valeric acid amyl alcohol mixture, other component in the flocking liquid also can produce corresponding effect, in fact, the overall technique effect of flocking liquid needs the mutual cooperation of various components to bring into play preferably, therefore, for the beneficial effect that makes flocking liquid of the present invention can be given full play to, need the ratio of each component in the flocking liquid reasonably be provided with.
For the present invention, the mass percent of described alkali is 5%-15%:
The principle of etching is to utilize the anisotropy of silicon substrate, alkali lye when concentration is low in different directions etch rate can differ 100 times, if alkali number is crossed conference and slackened anisotropy, promptly etch rate is very nearly the same in different directions, does not so just reach the effect of etching.Certainly the lower words of concentration of lye are the requirements that do not reach etch amount.It is suitable that the mass percent concentration of alkali is set to 5%-15%, and the present invention finds that such concentration can guarantee the anisotropic while of silicon substrate, keeps certain etch amount.
For the present invention, the mass percent of silicate is 20%-30%:
An amount of silicate plays the effect of a buffered soln, because etched process can produce silicate, and can be in the etching later stage because the enrichment meeting of silicate ion has a strong impact on etch rate if add under the original state into silicate.It is suitable that the mass percent concentration of silicate is set to 20%-30%, when the present invention finds that such concentration can be brought into play the silicate shock absorption, can not cause the etching later stage to have a strong impact on the consequence of etch rate owing to the enrichment of silicate ion at least.
For the present invention, the mass percent of valeric acid amyl alcohol mixture is 5%-15%:
The present invention finds that the valeric acid amyl alcohol mixture has been added not only can be increased cost but also can consume more alkali lye, add to have lacked not have and reduce the capillary effect of flocking liquid (also being the froth breaking effect), the mass percent of valeric acid amyl alcohol mixture is set to 5%-15% and has taken all factors into consideration above-mentioned two kinds of factors.
The silica-base material that is used to prepare solar cell through flocking liquid processing of the present invention, generally have some significant advantages, for example stability high (the film clips rate is generally 0%), the investment low (owing to not needing to set up utility appliance such as bubbling or groove internal circulation apparatus, the low 30-50% of cost of investment of the existing flocking apparatus of therefore general cost of investment) of flocking apparatus, the waste liquid generation between the matte good uniformity of silica-base material (can the silica-base material surface seeing thin and close little pyramid with microscope), flocking technique batch is few or the like.
For those skilled in the art are convenient to implement the present invention, the present invention also provides a kind of method for preparing flocking liquid, and this method comprises:
A, with water and can add in the reactor with the alkali of pasc reaction, stir and promote its dissolving, obtain alkali lye, and make the temperature of alkali lye remain on 50 ℃-80 ℃;
B, in the alkali lye of a step preparation, add the valeric acid amyl alcohol mixture, obtain first mixed solution, and make the temperature of first mixed solution remain on 50 ℃-80 ℃;
C, in first mixed solution, add silicate, obtain second mixed solution, and make the temperature of second mixed solution remain on 50 ℃-80 ℃;
D, in second mixed solution, add entry, and make the temperature of solution remain on 50 ℃-80 ℃,, promptly obtain flocking liquid with postcooling.
Consider the solubleness of silicate, silicate of the present invention refers to water glass or potassium silicate, preferred water glass.
Various components in the flocking liquid of the present invention are generally mixed under 50 ℃-80 ℃ condition, and such temperature setting can make the fully dissolving mutually of various components, lays the foundation thereby bring into play beneficial effect for flocking liquid.
Embodiment
Embodiment
The described flocking liquid of present embodiment comprises that mass percent is that 10% electronic-grade potassium hydroxide, mass percent are that 25% water glass, mass percent are 10% valeric acid amyl alcohol mixture (wherein the mass ratio of valeric acid and amylalcohol is 2.5: 1), all the other are pure water, and valeric acid and amylalcohol be the analytical reagent for being produced by Shanghai reagent three factories all.
Following mask body introduction is the method steps (the following percentage ratio of mentioning is mass percent) of the described flocking liquid of preparation present embodiment down:
1. the potassium hydroxide with 20% industrial pure water and 10% electronic-grade adds in the reactor, and middling speed (800-2500r/min) stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 70 ℃.Churning time was controlled at 25 minutes;
2. after treating that potassium hydroxide dissolves fully, the ratio in 10% adds the valeric acid amyl alcohol mixture by amount, and middling speed (800-3000r/min) stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 70 ℃.Churning time was controlled at 50 minutes;
3. the water glass (30% solid content) that adds electronic-grade in 25% ratio, middling speed (800-2500r/min) stir and promote its dissolving, and by the heating spacer temperature of solution are remained on 70 ℃.Churning time was controlled at 50 minutes;
4. the hot pure water (temperature is 70 ℃) that adds remaining proportion at last, middling speed (800-2500r/min) stir, and by the heating spacer temperature of solution are remained on 70 ℃, and churning time was controlled at 50 minutes, was cooled to 30 ℃ of after-filtration subsequently, and packing gets final product.
During use, only need silicon substrate is put into the etching groove that fills flocking liquid, the temperature of etching groove is 80 ℃, thereby arrives intensive pyramid at the silicon substrate surface observation under the microcosmic, and etching 30 minutes can be finished the flocking processing procedure.
After the silicon substrate of handling with above-mentioned flocking liquid was finally made the battery sheet, its cell photoelectric efficiency of conversion generally reached 16.8-17%, and the battery angularity is generally 0.95-1.25mm.
Beneficial effect of the present invention for convenience of explanation, now enumerate a method steps of finishing the flocking processing procedure with prior art:
Utilizing mass percent concentration earlier is that the aqueous solution of 20% potassium hydroxide is removed because the cutting vestige (or being called affected layer) that stays in the cutting process, remove the silicon materials of 8 μ m thickness, and then (wherein the mass percent concentration of potassium hydroxide is 3% to utilize the mixed aqueous solution of potassium hydroxide+Virahol+water glass, the mass percent concentration of Virahol is 0.5%, the mass percent concentration of water glass is 1%, all the other are water) etching 30 minutes under 80 ℃ temperature, equally, under the microcosmic, arrive intensive pyramid at the silicon substrate surface observation.
After the silicon substrate of handling with the mixed aqueous solution of above-mentioned potassium hydroxide+Virahol+water glass was finally made the battery sheet, its cell photoelectric efficiency of conversion was generally 16.0-16.5%, and the battery angularity is generally 1.4-1.6mm
Table 1 is the performance comparison table of the described silicon substrate of handling respectively with the mixed aqueous solution of flocking liquid and potassium hydroxide+Virahol+water glass of embodiment.
Table 1
Project The silicon substrate of handling through the mixed aqueous solution of embodiment potassium hydroxide+Virahol+water glass The silicon substrate of handling through embodiment flocking liquid
Reflectivity 14% ??13.5%
The monolithic cost of flocking processing procedure 0.20 first RMB ??0.15RMB

Claims (3)

1. flocking liquid, comprise can with alkali, silicate, defoamer and the water of pasc reaction, it is characterized in that described defoamer is the valeric acid amyl alcohol mixture, the mass ratio of valeric acid and amylalcohol is 3: 1~2: 1 in the valeric acid amyl alcohol mixture.
2. a kind of flocking liquid according to claim 1, the mass percent that it is characterized in that described alkali is 5%-15%, and the mass percent of silicate is 20%-30%, and the mass percent of valeric acid amyl alcohol mixture is 5%-15%, and all the other are water.
3. a method for preparing claim 1 or 2 described flocking liquid is characterized in that, comprises the steps:
A, with water and can add in the reactor with the alkali of pasc reaction, stir and promote its dissolving, obtain alkali lye, and make the temperature of alkali lye remain on 50 ℃-80 ℃;
B, in the alkali lye of a step preparation, add the valeric acid amyl alcohol mixture, obtain first mixed solution, and make the temperature of first mixed solution remain on 50 ℃-80 ℃;
C, in first mixed solution, add silicate, obtain second mixed solution, and make the temperature of second mixed solution remain on 50 ℃-80 ℃;
D, in second mixed solution, add entry, and make the temperature of solution remain on 50 ℃-80 ℃,, promptly obtain flocking liquid with postcooling.
CN2010101725950A 2010-05-07 2010-05-07 Preparation method of flocking liquid Expired - Fee Related CN101844872B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010101725950A CN101844872B (en) 2010-05-07 2010-05-07 Preparation method of flocking liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101725950A CN101844872B (en) 2010-05-07 2010-05-07 Preparation method of flocking liquid

Publications (2)

Publication Number Publication Date
CN101844872A true CN101844872A (en) 2010-09-29
CN101844872B CN101844872B (en) 2012-05-02

Family

ID=42769708

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101725950A Expired - Fee Related CN101844872B (en) 2010-05-07 2010-05-07 Preparation method of flocking liquid

Country Status (1)

Country Link
CN (1) CN101844872B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107118699A (en) * 2017-05-10 2017-09-01 东方环晟光伏(江苏)有限公司 A kind of solar energy etching polishing fluid and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1111170A (en) * 1992-10-23 1995-11-08 阿基莱斯株式会社 Short fibres for electrostatic flocking
CN101019212A (en) * 2004-10-28 2007-08-15 三益半导体工业株式会社 Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
CN101323955A (en) * 2008-02-27 2008-12-17 苏州苏电微电子信息化学品研发中心有限公司 Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1111170A (en) * 1992-10-23 1995-11-08 阿基莱斯株式会社 Short fibres for electrostatic flocking
CN101019212A (en) * 2004-10-28 2007-08-15 三益半导体工业株式会社 Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
CN101323955A (en) * 2008-02-27 2008-12-17 苏州苏电微电子信息化学品研发中心有限公司 Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107118699A (en) * 2017-05-10 2017-09-01 东方环晟光伏(江苏)有限公司 A kind of solar energy etching polishing fluid and preparation method thereof

Also Published As

Publication number Publication date
CN101844872B (en) 2012-05-02

Similar Documents

Publication Publication Date Title
KR101613541B1 (en) Additive for preparing suede on monocrystalline silicon chip and use method thereof
CN103647000B (en) A kind of crystal-silicon solar cell Surface Texture metallization processes
CN1983645A (en) Production of polycrystalline silicon solar battery suede
CN105040108B (en) The etching method of polysilicon solar cell
CN103710705A (en) Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof
CN101515611A (en) Process for etching solar cells by combining acid and alkali
WO2023019934A1 (en) Texturing additive for rapid texturing, and application
CN102270702A (en) Rework process for texturing white spot monocrystalline silicon wafer
CN102593268A (en) Method for carrying out cleaning and texture-surface-making on heterojunction solar cells by using texturing smoothing and rounding technique
CN107287597A (en) Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method
CN102978710A (en) Silicon solar cell surface light trapping structure and preparation method thereof
CN110524398A (en) A kind of additive for the polishing of crystalline silicon acidity and acid polishing method
CN102810596A (en) Suede preparation method of metallurgical-grade single crystal and mono-like silicon
CN109853044A (en) Monocrystalline silicon surface composite microstructure and preparation method thereof based on all band anti-reflection
CN106601836A (en) Technology for manufacturing light trapping structure in surface of photovoltaic cell based on nano-particles
CN103904157A (en) Method for making texture surface of silicon wafer
CN101844872B (en) Preparation method of flocking liquid
CN104371555A (en) Method for recycling waste rare earth polishing powder and rare earth polishing liquid
WO2012012979A1 (en) Method for producing velvet by combining laser and acid etching
CN105633196B (en) A kind of silicon chip surface processing method in crystal silicon solar batteries passivation technology
CN101414641A (en) Solar cell knap surface structure and preparation method
CN116004233A (en) Etching additive for improving uniformity of textured surface of silicon wafer and use method
CN110295395A (en) A kind of monocrystalline silicon flocking additive and its application for adding graphene oxide quantum dot
CN115820132A (en) Chain type alkali polishing process additive and application thereof
CN103789838A (en) Preparation method and application of crystal silicon texturing additive

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120502

Termination date: 20180507

CF01 Termination of patent right due to non-payment of annual fee