CN101840875B - Image capturing device and image capturing control method for measuring aperture of contact hole - Google Patents
Image capturing device and image capturing control method for measuring aperture of contact hole Download PDFInfo
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- CN101840875B CN101840875B CN2009100476322A CN200910047632A CN101840875B CN 101840875 B CN101840875 B CN 101840875B CN 2009100476322 A CN2009100476322 A CN 2009100476322A CN 200910047632 A CN200910047632 A CN 200910047632A CN 101840875 B CN101840875 B CN 101840875B
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Abstract
The invention discloses an image capturing device for measuring the aperture of a contact hole, comprising an SEM (Scanning Electron Microscope), a first control unit, a second control unit and a parameter configuration unit, wherein the first control unit is used for exposing on a photoresist adhesive spun on a wafer to form the shape of the contact hole and the shape of a preset reference area with larger size than the contact hole and controlling the SEM to capture an image in the reference area; the second control unit is used for controlling the SEM to translate relative to the wafer until the image expressing the shape of the contact hole enters the visual field of the SEM according to the position relationship of the preset shape of the contact hole relative to the reference area so as to capture the image expressing the shape of the contact hole; and the parameter configuration unit is used for storing the position relationship of the shape of the contact hole relative to the reference area. Meanwhile, the invention also discloses an image capturing control method for measuring the aperture of the contact hole. By adopting the method and the device, the efficiency for capturing images can be improved.
Description
Technical field
The present invention relates to the control technology in the integrated circuit manufacturing, particularly a kind of image capture apparatus and image-capturing control method of measuring aperture of contact hole.
Background technology
Because the extensive use of electronic equipment; The manufacturing process of integrated circuit has obtained development at full speed; In the manufacturing process of integrated circuit, behind the patterning photoresist, the photoresist that is spun on wafer forms the contact hole shape through exposure; And carry out etching according to this contact hole shape, finally form corresponding contact hole.
Wherein, Because the actual size of the contact hole that the size of the contact hole shape that resist exposure forms and etching form satisfies certain relation; Therefore; Before carrying out etching, the size of the contact hole shape that need form resist exposure is usually measured, is touched to achieve a butt joint the actual size in hole and measures, if the size of the contact hole shape that resist exposure forms meets the demands; The actual size of then representing the contact hole that etching forms also can meet the demands, and then carries out etching according to the contact hole shape.
Specifically, above-mentioned measuring process utilizes scanning electron microscopy (SEM) directly to catch the image of contact hole shape usually, yet; For the process node of 65 nanometers, the actual size of contact hole is very little, correspondingly; The size of the contact hole shape that resist exposure forms also can be very little; Therefore, utilize SEM be difficult to directly catch the contact hole shape image, need expend the more time, thereby the efficient that makes image catch is not high.
And, after the image that captures the contact hole shape, also possibly further control SEM usually and focus to the image of this contact hole shape, the image of contact hole shape clearly appears in the visual field.Thus because SEM can launch the particle beams of certain intensity when focusing, thereby and this particle beams can be injected the photoresist of contact hole shape edges and produces the white edge effect, and then influence the actual size of the contact hole of subsequent etch formation.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of image capture apparatus and image-capturing control method of measuring aperture of contact hole, to improve the efficient that image is caught.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of image capture apparatus of measuring aperture of contact hole comprises scanning electron microscopy SEM, and this device also comprises:
First control unit is used for after shape that is spun on the said contact hole of exposure formation on the photoresist of wafer and the shape of size greater than the preset reference zone of said contact hole, controlling the image that said SEM catches said reference area;
Second control unit; Be used for according to the position relation of the contact hole shape that is provided with in advance with respect to reference area; Control said SEM with respect to said wafer translation, get in the visual field of said SEM until the image of expression contact hole shape, to catch the image of said contact hole shape;
Parameter configuration unit is used to store the position relation of said contact hole shape with respect to reference area.
Said contact hole shape and said reference area are a plurality of;
This device further comprises: the image conversion interaction platform; Be used for according to the coordinate of each reference area that is provided with in advance and each contact hole shape showing the image conversion interface that comprises all contact hole shapes and all reference areas with respect to the position relation of any reference area;
And said parameter configuration unit is further used for storing the coordinate of each reference area that is provided with in advance;
First selection instruction of the arbitrary contact hole of expression that said first control unit further receives according to said image conversion interaction platform; Control SEM catches the image of the reference area corresponding with this contact hole shape; Or second selection instruction of the arbitrary reference area of expression that receives according to said image conversion interaction platform, directly control the image that SEM catches the represented reference area of second selection instruction.
This device further comprises: the 3rd control unit is used to control said SEM and focuses to the image of said reference area;
And said second control unit further after said focusing, is controlled said SEM with respect to said wafer translation.
Said reference area is to be arranged according to any-mode by the shape of several contact holes to constitute.
Distance between said reference area and the contact hole shape is less than 10 microns.
A kind of image-capturing control method of measuring aperture of contact hole, after shape that is spun on the said contact hole of exposure formation on the photoresist of wafer and the shape of size greater than the preset reference zone of said contact hole, this method may further comprise the steps:
Gated sweep electron microscope SEM catches the image of said reference area;
According to the position relation of the contact hole shape that is provided with in advance with respect to reference area, control said SEM with respect to said wafer translation, get in the visual field of said SEM until the image of expression contact hole shape, to catch the image of said contact hole shape.
Said contact hole shape and said reference area are a plurality of;
This method further according to the coordinate of the reference area that is provided with in advance and each contact hole shape with respect to the position relation of any reference area, show the image conversion interface that comprises all contact hole shapes and all reference areas;
And; First selection instruction of the arbitrary contact hole shape of expression that this method further receives according to said image conversion interface; Control SEM catches the image of the reference area corresponding with this contact hole shape; Or second selection instruction of the arbitrary reference area of expression that receives according to said image conversion interface, directly control the image that SEM catches the represented reference area of second selection instruction.
Before the said SEM of control was with respect to said wafer translation, this method further said SEM of control was focused to the image of said reference area.
Said reference area is to be arranged according to any-mode by the shape of several contact holes to constitute.
Distance between said reference area and the contact hole shape is less than 10 microns.
Visible by above-mentioned technical scheme; The present invention can control the image that SEM catches reference area earlier; And then according to the position relation of the contact hole shape that is provided with in advance with respect to reference area; Control SEM is with respect to the wafer translation, get in the visual field of said SEM until the image of expression contact hole shape, thereby captures the image of contact hole shape through the translation location.Like this; Because the size of reference area is greater than contact hole; Thereby than the image of catching the contact hole shape; The image of catching reference area is more prone to, consumed time is less, and the mode of translation location need not search and coupling in the acquisition procedure, measures the efficient that the required image of aperture of contact hole is caught thereby can improve.
In addition; SEM is with respect to before the wafer translation; The present invention also can be further to the image of reference area but not the image of contact hole shape focus; Making need not to focus after the SEM translation image of contact hole shape clearly can occur in the visual field of SEM, thereby has avoided the white edge effect of contact hole shape edges.
Description of drawings
Fig. 1 is a kind of structural representation of measuring the image acquisition control device of aperture of contact hole provided by the present invention;
Fig. 2 is a kind of flow chart of measuring the image-capturing control method of aperture of contact hole provided by the present invention;
Fig. 3 is that the position of contact hole and corresponding reference area concerns sketch map among the embodiment provided by the present invention;
Fig. 4 is the flow chart of the embodiment of a kind of image-capturing control method of measuring aperture of contact hole provided by the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Fig. 1 is a kind of structural representation of measuring the image capture apparatus of aperture of contact hole provided by the present invention, and is as shown in Figure 1, and this device comprises SEM 101, first control unit 102, second control unit 103, parameter configuration unit 106.
In the practical application; First control unit 102 in the device as shown in Figure 1 can export the parameter of the expression reference area shape that is provided with in advance to SEM 101; With the image of control SEM 101 according to the shape acquisition reference area of reference area; Perhaps; Parameter configuration unit 106 can be stored the coordinate of each reference area that is provided with in advance, and first control unit 102 can read the coordinate of corresponding reference area and exports SEM 101 to, directly catches the image of reference area according to the coordinate of the reference area of storage in the parameter configuration unit 106 with control SEM 101.
And second control unit, 103 control SEM 101 are with respect to the wafer translation; Specifically implement; Dual mode can be arranged: the pallet translational at this wafer place of motor-driven that 103 controls of second control unit link to each other with the pallet at wafer place; Thereby drive this wafer translation, this wafer is changed with respect to the position of SEM 101; Perhaps, motor-driven SEM 101 translations that the control of second control unit 103 links to each other with SEM 101, thus wafer is changed with respect to the position of SEM 101.
Need to prove; Can have a plurality of contact holes and a plurality of reference area in the practical application, a plurality of contact holes described here and a plurality of reference area are also nonessential to be one to one, in general; Reference area can corresponding a plurality of contact holes, also can corresponding contact hole.
So for the ease of selection needs the contact hole of measurement arbitrarily, also selection needs device as shown in Figure 1 to carry out the reference area that utilizes in the acquisition procedure arbitrarily; As shown in Figure 1; This device can further comprise: image conversion interaction platform 105; Be used for according to the coordinate of each reference area that is provided with in advance and each contact hole shape showing the image conversion interface that comprises all contact hole shapes and all reference areas with respect to the position relation of any reference area.Correspondingly; First selection instruction of the arbitrary contact hole of expression that first control unit 102 receives according to image conversion interaction platform 105; Control SEM 101 catches the image of the reference area corresponding with this contact hole shape; Or second selection instruction of the arbitrary reference area of expression that receives according to image conversion interaction platform 105, directly control the image that SEM 101 catches the represented reference area of second selection instruction.
In addition, as shown in Figure 1, this device also can further comprise the 3rd control unit 104, and the image that is used to control 101 pairs of reference areas of SEM is focused, till the clear picture of the reference area in SEM 101 visuals field.Be specially; The 3rd control unit 104 links to each other with SEM 101; To SEM 101 transmissions need focusing control command, receive the focusing end signal that is fed back after the clear picture of the reference area of SEM 101 in the visual field; And notify second control unit 103 to begin to control SEM 101 with respect to the wafer translation, catch with the image that carries out the contact hole shape.Wherein, how SEM 101 discerns feedback focusing end signal after the clear picture of the clear picture of the reference area in the visual field and the reference area in the visual field, can realize according to its existing mode, repeats no more at this.
More than, be detailed description to image capture apparatus among the present invention.Below, again image-capturing control method among the present invention is described.
Fig. 2 is a kind of flow chart of measuring the image-capturing control method of aperture of contact hole provided by the present invention; After shape that is spun on the said contact hole of exposure formation on the photoresist of wafer and the shape of size greater than the preset reference zone of said contact hole; As shown in Figure 2, this method may further comprise the steps:
Step 201 with respect to the position relation of any reference area, shows the image conversion interface that comprises all contact hole shapes and all reference areas according to the coordinate of the reference area that is provided with in advance and each contact hole shape.
Step 202; First selection instruction of the arbitrary contact hole shape of expression that receives according to the image conversion interface; Control SEM catches the image of the reference area corresponding with this contact hole shape; Or second selection instruction of the arbitrary reference area of expression that receives according to the image conversion interface, directly control the image that SEM catches the represented reference area of second selection instruction.
When the corresponding relation of reference area and contact hole shape is set, should make the contact hole shape short as far as possible with the distance between the corresponding reference area, preferably, the distance between contact hole shape and the corresponding reference area is less than 10 microns.
Step 203, control SEM focuses to the image of the reference area of catching.
Step 204, according to the position relation of the contact hole shape that is provided with in advance with respect to reference area, control SEM is with respect to the wafer translation, in the visual field of the image entering SEM that representes the contact hole shape, to catch the image of contact hole shape.
It is thus clear that based on the image-capturing control method and the image capture apparatus of above-mentioned measurement aperture of contact hole, control SEM catches the image of reference area earlier; And control SEM focuses to the image of reference area, and then according to the position relation of the contact hole shape that is provided with in advance with respect to reference area, control SEM is with respect to the wafer translation, get in the visual field of SEM until the image of expression contact hole shape; Thereby catch the image of contact hole shape; Like this, can catch the contact hole shape, improve and measure the efficient that the required image of aperture of contact hole is caught through the mode of translation location; Simultaneously, avoided the white edge effect of contact hole shape edges.
Through an embodiment the present invention is detailed below.
Fig. 3 is that the position of contact hole and corresponding reference area concerns sketch map among the embodiment provided by the present invention; Reference area 301 constitutes with the identical hole of contact hole 302 aperture sizes by 16; Fig. 4 is the flow chart of the embodiment of a kind of image-capturing control method of measuring aperture of contact hole provided by the present invention; As shown in Figure 4, this method may further comprise the steps:
Step 401, the display graphics interface comprises all contact holes and all reference areas on the wafer in the graphical interfaces.
Step 402 is selected contact hole 302 in graphical interfaces, or the direct corresponding reference area 301 of selection and contact hole 302.
Step 403, control SEM catches the image of the reference area 301 corresponding with contact hole 302.
Step 404, control SEM focuses to the image of the reference area 301 of catching, and makes to occur the image of reference area 301 clearly in the visual field.
Step 405, according to the position relation of contact hole 302 with respect to reference area 301, SEM is with respect to the wafer translation in control, catches the image of contact hole 302.
The above is merely preferred embodiment of the present invention, is not to be used for limiting protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an image capture apparatus of measuring aperture of contact hole comprises scanning electron microscopy SEM, it is characterized in that, this device also comprises:
First control unit is used for after shape that is spun on the said contact hole of exposure formation on the photoresist of wafer and the shape of size greater than the preset reference zone of said contact hole, controlling the image that said SEM catches said reference area;
Second control unit; Be used for according to the position relation of the contact hole shape that is provided with in advance with respect to reference area; Control said SEM with respect to said wafer translation, get in the visual field of said SEM until the image of expression contact hole shape, to catch the image of said contact hole shape;
Parameter configuration unit is used to store the position relation of said contact hole shape with respect to reference area.
2. device according to claim 1 is characterized in that, said contact hole shape and said reference area are a plurality of;
This device further comprises: the image conversion interaction platform; Be used for according to the coordinate of each reference area that is provided with in advance and each contact hole shape showing the image conversion interface that comprises all contact hole shapes and all reference areas with respect to the position relation of any reference area;
And said parameter configuration unit is further used for storing the coordinate of each reference area that is provided with in advance;
First selection instruction of the arbitrary contact hole of expression that said first control unit further receives according to said image conversion interaction platform; Control SEM catches the image of the reference area corresponding with this contact hole shape; Or second selection instruction of the arbitrary reference area of expression that receives according to said image conversion interaction platform, directly control the image that SEM catches the represented reference area of second selection instruction.
3. device according to claim 1 and 2 is characterized in that, this device further comprises: the 3rd control unit is used to control said SEM and focuses to the image of said reference area;
And said second control unit further after said focusing, is controlled said SEM with respect to said wafer translation.
4. device according to claim 1 and 2 is characterized in that, said reference area is to be arranged according to any-mode by the shape of several contact holes to constitute.
5. method according to claim 1 and 2 is characterized in that, the distance between said reference area and the contact hole shape is less than 10 microns.
6. image-capturing control method of measuring aperture of contact hole; It is characterized in that; After shape that is spun on the said contact hole of exposure formation on the photoresist of wafer and the shape of size greater than the preset reference zone of said contact hole, this method may further comprise the steps:
Gated sweep electron microscope SEM catches the image of said reference area;
According to the position relation of the contact hole shape that is provided with in advance with respect to reference area, control said SEM with respect to said wafer translation, get in the visual field of said SEM until the image of expression contact hole shape, to catch the image of said contact hole shape.
7. method according to claim 6 is characterized in that, said contact hole shape and said reference area are a plurality of;
This method further according to the coordinate of the reference area that is provided with in advance and each contact hole shape with respect to the position relation of any reference area, show the image conversion interface that comprises all contact hole shapes and all reference areas;
And; First selection instruction of the arbitrary contact hole shape of expression that this method further receives according to said image conversion interface; Control SEM catches the image of the reference area corresponding with this contact hole shape; Or second selection instruction of the arbitrary reference area of expression that receives according to said image conversion interface, directly control the image that SEM catches the represented reference area of second selection instruction.
8. according to claim 6 or 7 described methods, it is characterized in that before the said SEM of control was with respect to said wafer translation, this method further said SEM of control was focused to the image of said reference area.
9. according to claim 6 or 7 described methods, it is characterized in that said reference area is to be arranged according to any-mode by the shape of several contact holes to constitute.
10. according to claim 6 or 7 described methods, it is characterized in that the distance between said reference area and the contact hole shape is less than 10 microns.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100476322A CN101840875B (en) | 2009-03-16 | 2009-03-16 | Image capturing device and image capturing control method for measuring aperture of contact hole |
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| CN2009100476322A CN101840875B (en) | 2009-03-16 | 2009-03-16 | Image capturing device and image capturing control method for measuring aperture of contact hole |
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| CN101840875A CN101840875A (en) | 2010-09-22 |
| CN101840875B true CN101840875B (en) | 2012-03-21 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101063829A (en) * | 2006-04-27 | 2007-10-31 | 三星电子株式会社 | Overlay measuring method and overlay measuring apparatus using the same |
| CN101262003A (en) * | 2007-02-16 | 2008-09-10 | 夏普株式会社 | Solid-state image capturing device and electronic information device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101063829A (en) * | 2006-04-27 | 2007-10-31 | 三星电子株式会社 | Overlay measuring method and overlay measuring apparatus using the same |
| CN101262003A (en) * | 2007-02-16 | 2008-09-10 | 夏普株式会社 | Solid-state image capturing device and electronic information device |
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