CN101840455B - Design method of TFT active array peripheral circuit - Google Patents
Design method of TFT active array peripheral circuit Download PDFInfo
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- CN101840455B CN101840455B CN201010159303XA CN201010159303A CN101840455B CN 101840455 B CN101840455 B CN 101840455B CN 201010159303X A CN201010159303X A CN 201010159303XA CN 201010159303 A CN201010159303 A CN 201010159303A CN 101840455 B CN101840455 B CN 101840455B
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Abstract
The invention relates to a design method of a TFT active array peripheral circuit, which mainly comprises the following steps that: when a TFT active array display device is manufactured, a blank area is pre-reserved in an invalid area; then a route map is drawn, an element is set and a functional component is selected on the blank area according to the integrated principles of a peripheral compatible control circuit; the control functions of a plurality of control circuits are transferred to the TFT active array display device, so that after the TFT active array display device is completed, function selection can be realized by the circuit carve-off or the connection repairing of some specific parts, so as to be compatible with a plurality of control functions; a conductive layer and an insulating layer are used for making resistors, capacitors and leads equivalent, thereby omitting the purchasing of element and saving the cost; a connector only realizes the connection function, no element needs to be installed on the connector, the size is smaller and the benign production rate is improved; and no element slot needs to be manufactured on a backlight device, thereby reducing the processing link, and improving the anti-impact performance of the product.
Description
Technical field
The present invention relates to a kind of circuit design method, relate in particular to a kind of method for designing of TFT active array peripheral circuit.
Background technology
At present, the TFT active array display device cooperates flexible PCB control to obtain widespread use.In order to satisfy the needs that a TFT active array display device is applicable to many moneys product, routine techniques be with Circuit Design on flexible PCB, the TFT active array display device is only born Presentation Function.
When on flexible PCB, designing control circuit, two kinds of implementation methods are arranged:
1, earlier all elements, switching circuit are all designed on flexible PCB, to wouldn't the functions of use element taking to reserve the installation site and wouldn't production method, can compatible various control circuit; Its shortcoming is that the suitable product of a TFT active matrix display is many more, needs the position of installation elements just many more on the flexible PCB, and corresponding member slot is just big more; So that there are not enough spaces to make member slot; Need modification, cause the design cycle to prolong, because position of components is many; The flexible circuit board size increases, and has increased cost of products; Or select the small size element of non-optimal parameter for use, cause performance to reduce.
2, by required many moneys of production flexible PCB, the corresponding a kind of flexible PCB of each product.This method for designing makes the element on the flexible PCB few, and volume is little, but does not have compatible various control circuit, needs repeatedly die sinking, has increased cost, and fabrication cycle is long.
For example, in the scheme 1 of Flexible Control circuit board, need the 9th pin and the 10th pin and the 11st pin short circuit for realizing a kind of driving function; In scheme 2, needs at the access electric capacity of connecting between the 9th pin and the 10th pin and the 11st pin for realizing the another kind of function that drives.Way according to present is: 1, on flexible PCB, reserve the interface of short circuit and the interface of serial connection electric capacity, carry out short circuit when needed or be connected in series electric capacity; 2, make two flexible PCB respectively.The former causes the volume of flexible PCB to become big, and the latter needs repeatedly die sinking, all causes the wasting of resources and cost to increase.
In addition; Element on the flexible PCB is installed in the member slot on the back lighting device; Receive the influence of member slot size; Be easy to generate that element is impaired because of pushing, element is member slot jack-up, back lighting device such as can't install and fix at quality defect, the buying of flexible circuit panel element also can bring the delay of design cycle.
According to present case; A TFT active array display device is after completing, and the function of its completion is just decided, and increase or change Presentation Function; Change other flexible PCB or the TFT active array display device is carried out the design of die sinking again with regard to needs; The die sinking again of TFT active array display device, and the replacing of flexible circuit, these have all increased cost.
Summary of the invention
Technical matters to be solved by this invention provides a kind of method for designing of TFT active array peripheral circuit; The method for designing of this TFT active array peripheral circuit can compatible various control function, can revise at any time according to different functions, under the situation that does not need die sinking manufacturing again, just can accomplish the conversion or the what's new of difference in functionality; The flexible PCB that matches then only need be realized linkage function; Need not installation elements on flexible PCB, the size of flexible PCB also can reduce with layer structure, has reduced the element buying; Reduce cost, improved the production yield.The technical scheme that adopts is following:
A kind of method for designing of TFT active array peripheral circuit is characterized in that: comprise the steps:
General TFT active array display device all is divided into an effective viewing area and an inactive area; Effectively the viewing area is used for display image; And inactive area can be used for being provided with elements such as functional lines such as IC drive wire, data line, sweep trace, detection line and TFT device, resistance, storage capacitors, above-mentioned functions line and element have been set after remaining white space can be used for being provided with peripheral compatible control circuit; Therefore when making the TFT display device, reserve white space, just can the compatible control circuit of periphery be set on the white space.
Each is opened the circuit theory diagrams of control circuit and all represents the product that uses this schematic diagram when making, need use the element group of appointment on the circuit theory diagrams, after making completion, can realize one group of set function.The circuit theory diagrams representative products of different control circuits need use different element groups when making, after making completion, can realize one group of different functions.Get the union of the circuit theory diagrams of each control circuit; Promptly identical part only keeps portion on the circuit theory diagrams for each control circuit; And different portions is merged, thereby form the Synthesis principle figure of a compatible control circuit of periphery, and on white space, draw wiring diagram according to the Synthesis principle figure of the compatible control circuit of periphery; Make product when making, can select to use a certain or certain several element group, attainable one or more groups function after making completion.
The requirement of step 3, the Synthesis principle figure according to the compatible control circuit of periphery, wiring diagram, component parameters and Electro Magnetic Compatibility is carried out element design and is connected with circuit, and the compatible control circuit of periphery is fabricated on the white space, makes the interface unit interface simultaneously.
A plurality of conductive layers are set on white space come equivalent resistance, electric capacity and lead, insulation course is set between conductive layer.Resistance can use single conductive layer or a plurality of conductive layer to come equivalence, when coming equivalent resistance with a plurality of conductive layers, connects through connecting hole (CROSS) between the conductive layer; Electric capacity can be made up of conductive layer and insulation course; The corresponding conductive layer in wherein any two or more positions is as the electrode of electric capacity; Insulation course between conductive layer is then as the dielectric layer of electric capacity; Electric capacity can be the mode that two conductive layers cooperate at least one insulation course, also can be the mode that a plurality of conductive layers cooperate a plurality of insulation courses; Lead can represent that the lead of striding layer then connects through connecting hole (CROSS) through etching on conductive layer.During design interface unit interface, should be that situation such as hot pressed paper, single-layer-flex circuit or metal leg design according to the interface unit of last selection, what need consideration usually be conveniently to be connected with interface unit.The material of conductive layer can adopt metals such as iron, copper, aluminium, also can be its alloy or its oxide.
Through above-mentioned setting, the peripheral compatible control circuit on the white space comprises above-mentioned a plurality of control circuit.
When on white space, drawing wiring diagram according to the Synthesis principle figure of the compatible control circuit of periphery, employing be the union of the circuit theory diagrams of each control circuit, gathered all functions of selected each control circuit.But the function of the control circuit that has does not need in specific requirement; And often start from consideration to the finite space with the layout of integral body of white space, and on white space, do not have too complicated wiring, be to reserve the space that element is set in the relevant position.For unwanted those functions in the specific requirement; Need remove the function corresponding assembly; In order to avoid entire circuit is impacted, often adopt CVD method or electron beam evaporation appearance that circuit is carried out in unwanted those connections and break quarter, remove unwanted functional module; For only staying originally the position was set, did not have line, and then need adopt line to augment mode and connect.Connecting the mode of augmenting can adopt fly line to connect or other electric connection mode.
Because all control circuits all are set on the white space, therefore, the structure of interface unit is quite simple, just realizes simple linkage function.Interface unit can be flexible PCB, hot pressed paper or metal leg etc.
TFT active array display device and interface unit are linked together, obtain the TFT active array display device of respective control function.
The TFT active array display device can be amorphous silicon active array display device, polysilicon active array display device or organic electroluminescent (OLED) active array display device etc.
Main design thought of the present invention is: when making the TFT active array display device; On inactive area, reserve white space; Synthesis principle figure according to the compatible control circuit of periphery draws series of process such as wiring diagram, element setting, functional module selection on white space then; The control function of a plurality of control circuits is transferred on the TFT active array display device; Make after the TFT active array display device is accomplished, can carry out setting and selection that some drive function, and do not have the temporal sequencing that is manufactured on of strict qualification step that the present invention carried out and TFT active array display device.As before making the TFT active array display device, just designing the Synthesis principle figure of peripheral compatible control circuit; Under the situation of the Synthesis principle figure of the compatible control circuit of known periphery, can be at the pilot process of making the TFT active array display device, on white space, draw wiring diagram and to the setting of some functional module.
For reaching the purpose that enlarges white space, is convenient to be provided with peripheral compatible control circuit; As preferred version of the present invention; It is characterized in that: adopt range upon range of lead-in wire mode that IC drive wire, data line, sweep trace and the detection line of effective viewing area are set, to increase the area of white space.On the one hand because technological level has determined the width and the spacing of lead-in wire, so in identical space, the quantity that adopts the lead-in wire mode of multilayer (N layer) can hold lead-in wire is N times of quantity of individual layer lead-in wire; Under the identical situation of lead-in wire total quantity, adopt range upon range of lead-in wire mode, the area that obviously takies is little, thereby can obviously increase the area of white space; On the other hand, the resistivity of different conductive layers is different, because control circuit has strict demand to line resistance; So the wire widths in the conductive layer high more than resistivity of the wire widths in the low conductive layer of resistivity is wide; The area that takies is big, and adopts range upon range of lead-in wire mode, can make full use of the conduction advantage of the high conductive layer of resistivity; Reduce wire widths, obviously increase the area of white space; Because the size of the area of white space has determined the production quantity of control circuit, so adopt range upon range of lead-in wire mode that the peripheral compatible control circuit that contains more control circuits can be set.
In order to reach the purpose of the setting that more TFT peripheral control circuit and more convenient capacitive element are set; As the further preferred version of the present invention; It is characterized in that: on white space, the superimposed setting of conductive layer and insulation course, the sum of conductive layer and insulation course is at least four layers.Between conductive layer and the insulation course one or more insulation courses should be set.In order to use conductive layer and insulation course to come equivalent capacity; Must comprise two conductive layer and insulation courses as capacitor dielectric as capacitance electrode; Insulation course is located between two conductive layers, also an insulation course, at least four layers altogether should be set between the upper surface of the top conductive layer.For more TFT peripheral control circuits can be set; More conductive layer and insulation course can be set; As increase an insulation course and a conductive layer, just have more a conductive layer TFT peripheral control circuit is set, thereby reach the purpose of the more TFT peripheral control circuits of setting.Simultaneously, increase conductive layer and insulation course, the more convenient serial or parallel connection that electric capacity is set.
Simplify to make flow process in order reaching, not increase the purpose of the production difficulty of TFT display device,, it is characterized in that as the present invention's preferred version further: on white space, conductive layer and insulation course add up to five layers.The sum that adds up through preferred conduction layer and insulation course is five layers, has so both taken into account quantity and capacitive problem that the TFT peripheral control circuit is set, has also taken into account the complexity of making.For example; These five layers comprise three conductive layers and two insulation courses, if increase a conductive layer and an insulation course, promptly make seven layers (structures that comprise four conductive layers and three insulation courses); Then can have more a conductive layer and carry out the making of resistance and capacity cell in the peripheral compatible control circuit; The increase of insulation course helps the making of capacitive element, simultaneously the compatible control circuit of more periphery can be set, and is more easy for realization of the present invention.But so just increased the difficulty of making.Because, be that conductive layer of making or insulation course all need carry out different layouts and strict Industry Control on the one hand, the increase of the number of plies has just increased design content and Industry Control amount; On the other hand and since live width apart from or spacing all be controlled at micron order, occur easily opening circuit or defective such as short circuit, rete increases and occurs more defectives easily; The third aspect, high to the purification requirement of plant and equipment, manufacturing time is long more, occurs contamination of products more easily, causes yield to descend.
The present invention realizes the transfer of compatible control circuit from flexible PCB to the TFT active array display device through all control circuits are set on the white space of TFT active array display device; And adopt conductive layer and insulation course to come equivalent resistance, electric capacity and lead, and save the purchase element, practice thrift cost; After the TFT active array display device completes, some privileged site is carried out circuit carve disconnected or line is repaired, realize function selecting, can compatible various control function; And connector is only realized linkage function, need not installation elements on connector, and size also can correspondingly be done little, has improved the production yield; Back lighting device need not to make member slot, has reduced processing link, has improved the product shock resistance.
Description of drawings
Fig. 1 is the regional structural representation that on the inactive area of TFT active array display device, leaves some space.
Fig. 2 is the side view of Fig. 1.
Fig. 3 is the Synthesis principle figure of the compatible control circuit of a kind of periphery.
Fig. 4 is that the Synthesis principle figure with peripheral compatible control circuit shown in Figure 3 is plotted to the wiring diagram on the white space.
Fig. 5 is the A part partial enlarged drawing of Fig. 4.
Fig. 6 is a kind of resistance synoptic diagram of five-layer structure.
Fig. 7 is a kind of electric capacity synoptic diagram of five-layer structure.
Fig. 8 is a kind of resistance synoptic diagram of single conductive coating structure.
Fig. 9 is a kind of electric capacity synoptic diagram of four-layer structure.
Figure 10 is a kind of electric capacity synoptic diagram of six layers of structure.
Figure 11 is the wiring diagram of electric capacity.
Figure 12 is the wiring diagram of contact hole resistance.
Figure 13 is the wiring diagram of wire resistor.
Figure 14 realizes short-circuit disconnected synoptic diagram at quarter.
Figure 15 is a synoptic diagram of realizing inserting electric capacity.
Figure 16 is a kind of schematic circuit of interface unit.
Figure 17 is the synoptic diagram that the TFT active array display device is connected with interface unit.
Figure 18 is the synoptic diagram of white space after the range upon range of lead-in wire mode of employing.
Figure 19 is the synoptic diagram of white space after the employing individual layer lead-in wire mode.
Figure 20 a is the A-A cut-open view of Figure 18, when the double-deck lead mode is adopted in expression, and the relation of extension line and each layer of TFT active array display device.
Figure 20 b is the B-B cut-open view of Figure 19, when individual layer lead-in wire mode is adopted in expression, and the relation of extension line and each layer of TFT active array display device.
Figure 21 is the synoptic diagram of the functional module of first kind of control circuit.
Figure 22 is the synoptic diagram of the functional module of second kind of control circuit.
Figure 23 is the synoptic diagram of the functional module of the third control circuit.
Figure 24 is comprehensive Figure 21, Figure 22 and Figure 23 and the Synthesis principle figure of the peripheral compatible control circuit that forms.
Figure 25 carries out the synoptic diagram that circuit is carved the realization control circuit function shown in Figure 21 of having no progeny to Figure 24.
Embodiment
Do further explanation below in conjunction with accompanying drawing and preferred implementation of the present invention.
The method for designing of this TFT active array peripheral circuit comprises the steps:
The requirement of step 3, the Synthesis principle figure according to the compatible control circuit of periphery, wiring diagram, component parameters and Electro Magnetic Compatibility is carried out element design and is connected with circuit, and the compatible control circuit of periphery is fabricated on the white space 3, makes the interface unit interface simultaneously.The conductive layer and the insulation course that add up to five layers are set on white space come equivalent resistance, electric capacity and lead, insulation course is set between conductive layer.As shown in Figure 6, resistance is made up of three conductive layers 7 and two insulation courses 8, and two insulation courses 8 are arranged between adjacent two conductive layers 7, and adjacent two conductive layers 7 connect through connecting hole 9; As shown in Figure 7, electric capacity is made up of three conductive layers 7 and two insulation courses 8, and two insulation courses 8 are arranged between adjacent two conductive layers 7, and conductive layer 7 is as the electrode of electric capacity, and insulation course 8 is as the dielectric layer of electric capacity; Lead can represent that the lead of striding layer then connects through connecting hole through etching on conductive layer; By the schematic diagram of peripheral compatible control circuit shown in Figure 3 and the component parameters of being demarcated and electromagnetic compatibility requirements the compatible control circuit of periphery is set on the white space; Make the interface unit interface.
In another embodiment; Shown in Figure 18 and Figure 20 a, adopt range upon range of lead-in wire mode that IC drive wire, data line, sweep trace and the detection line of effective viewing area are set, to increase the area of white space; Figure 20 a is the A-A cut-open view of Figure 18; Figure 20 a can find out, adopts double-deck lead-in wire mode, and 12 of two-layer extension lines are provided with insulation course 13.Shown in Figure 19 is the synoptic diagram that adopts individual layer lead-in wire mode, and Figure 20 b is the B-B cut-open view of Figure 19, and Figure 20 b can find out to have only individual layer extension line 12.Comparison diagram 20a and Figure 20 b; Adopting individual layer lead-in wire mode is in one plane to arrange lead-in wire; And adopt the range upon range of lead-in wire mode zone that will go between to expand to the superjacent air space on this plane, when adopting N layer lead-in wire, the number of leads in same planar range be adopt the individual layer lead-in wire N doubly; And under the identical situation of the total quantity of lead-in wire, the plane domain that adopts N layer lead-in wire to take is N/one who adopts the individual layer lead-in wire; Contrast Figure 18 and Figure 19, shown in Figure 180 is to adopt the white space of being reserved after the double-deck lead mode, and Figure 19 adopts the white space of being reserved after the individual layer lead-in wire mode, and the area of the white space of Figure 18 is obviously greater than the area of the white space of Figure 19; The white space of being reserved after the employing double-deck lead mode shown in Figure 180 can be provided with more compatible control circuit.
In another embodiment; Like the schematic diagram of Figure 21, Figure 22 and three control circuits shown in Figure 23, the union of getting these three control circuit schematic diagrams forms the Synthesis principle figure of peripheral compatible control circuit shown in figure 24; After the TFT active array display device completes; As only need realize the function of control circuit principle Figure 21, and then adopt CVD method that Figure 24 is made related circuit and carve disconnectedly, form circuit shown in figure 25.
In other embodiments, can also adopt the electron beam evaporation appearance that circuit is carried out in unwanted those connections and break quarter, remove unwanted functional module; For only staying originally the position was set, did not have line, and then need adopt the line repairing method to connect.
In other embodiments, the resistance structure that can be single conductive layer as shown in Figure 87 form with insulation course 8.
In other embodiments, electric capacity can be as shown in Figure 9ly to comprise two conductive layers 7, and is arranged on the sandwich construction of the insulation course 8 between two conductive layers 7.
In other embodiments, electric capacity can be shown in figure 10, between two conductive layers, accompanies the structure of a plurality of insulation courses.
In other embodiments, conductive layer and the insulation course sum that adds up can be other quantity such as three, four, six, seven, and the electric capacity of sandwich construction shown in figure 10, conductive layer 7 and insulation course 8 sum that adds up is six layers.
The material of preferred above-mentioned conductive layer adopts molybdenum; In other embodiments; The material of conductive layer can adopt iron, aluminium, molybdenum, tantalum, titanium, neodymium, tungsten or its alloy, or the oxide of iron, aluminium, copper, also can adopt other conductive materials such as indium tin oxide, indium-zinc oxide.
Claims (4)
1. the method for designing of a TFT active array peripheral circuit is characterized in that: comprise the steps:
Step 1, when making the TFT active array display device, on the inactive area outside the effective viewing area of TFT active array display device, reserve and can be used in the white space that peripheral compatible control circuit is set;
Step 2, according to the size and the shape of white space; And according to the Synthesis principle figure of the compatible control circuit of periphery; On white space, draw wiring diagram, concrete way is: the circuit theory diagrams of a plurality of control circuits are listed one by one, and got the union of each circuit theory diagrams; Form the Synthesis principle figure of peripheral compatible control circuit, and on white space, draw wiring diagram according to the Synthesis principle figure of the compatible control circuit of periphery;
The requirement of step 3, Synthesis principle figure, wiring diagram, component parameters and Electro Magnetic Compatibility according to the compatible control circuit of periphery; Be employed in and a plurality of conductive layers are set on the white space come equivalent resistance, electric capacity and lead; The method that insulation course is set between conductive layer is carried out element design and is connected with circuit; The compatible control circuit of periphery is fabricated on the white space, makes the interface unit interface simultaneously;
Step 4, according to the function of required realization, adopt circuit to carve disconnected or line is augmented mode and selected to make corresponding control circuit;
Step 5, design or select interface unit, and interface unit is connected with the interface unit interface.
2. the method for designing of TFT active array peripheral circuit as claimed in claim 1 is characterized in that: adopt range upon range of lead-in wire mode that IC drive wire, data line, sweep trace and the detection line of effective viewing area are set, to increase the area of white space.
3. according to claim 1 or claim 2 the method for designing of TFT active array peripheral circuit is characterized in that: on white space, and the superimposed setting of conductive layer and insulation course, the sum of conductive layer and insulation course is at least four layers.
4. the method for designing of TFT active array peripheral circuit as claimed in claim 3 is characterized in that: conductive layer and insulation course add up to five layers.
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| CN201010159303XA CN101840455B (en) | 2010-04-23 | 2010-04-23 | Design method of TFT active array peripheral circuit |
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| CN201010159303XA CN101840455B (en) | 2010-04-23 | 2010-04-23 | Design method of TFT active array peripheral circuit |
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| CN101840455A CN101840455A (en) | 2010-09-22 |
| CN101840455B true CN101840455B (en) | 2012-01-25 |
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| CN201010159303XA Expired - Fee Related CN101840455B (en) | 2010-04-23 | 2010-04-23 | Design method of TFT active array peripheral circuit |
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| CN103116427B (en) * | 2012-12-10 | 2016-05-18 | 文山嘉鑫科技有限公司 | Bridging lead-in wire sensor and the moulding process thereof of individual layer multi-point touch screen |
| CN105744759B (en) * | 2016-03-17 | 2018-12-21 | 广东小天才科技有限公司 | The short circuit method of power supply adaptor and its first pin and second pin |
| CN108649037B (en) * | 2018-05-28 | 2020-12-11 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
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| GB2367414A (en) * | 2000-09-28 | 2002-04-03 | Seiko Epson Corp | Display device using TFT's |
| CN1538189A (en) * | 2003-04-16 | 2004-10-20 | 陈兰香 | Detecting method of glass crystal covered type liquid crystal display |
| CN101046590A (en) * | 2006-03-31 | 2007-10-03 | 元太科技工业股份有限公司 | Active matrix type display panel |
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