CN101838797B - Ion implantation method - Google Patents
Ion implantation method Download PDFInfo
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- CN101838797B CN101838797B CN200910201397XA CN200910201397A CN101838797B CN 101838797 B CN101838797 B CN 101838797B CN 200910201397X A CN200910201397X A CN 200910201397XA CN 200910201397 A CN200910201397 A CN 200910201397A CN 101838797 B CN101838797 B CN 101838797B
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Abstract
The invention discloses an ion implantation method. In the method, high energy ion beams in ion beams which are emergent along a straight path are implanted in a workpiece at a preset incident angle, the workpiece is arranged at a preset station on the straight path, low energy ion beams in the ion beams are subjected to deflection at least once by electrical effect or magnetic effect, the position and/or the angle of the workpiece are/is adjusted relative to the preset station to enable the low energy ion beams to be implanted in the workpiece at a preset emergent angle, and the implantation positions of the low energy ion beams and the high energy ion beams on the workpiece are the same. The method does not regulate the beam path in front of a speedchange turning area, thus lowering the difficulty in beam adjustment, maintaining beam optical characteristics better, ensuring good stability of ion beams, facilitating beam control, shortening adjustment time consumed by beam path switch greatly and improving beam utilization ratio.
Description
Technical field
The present invention relates to a kind of semiconductor making method, particularly relate to a kind of ion injection method.
Background technology
Because the production of semiconductor product tends to bigger semiconductor crystal wafer (from 8 inches to 12 inches, even 18 inches) gradually, single-wafer technology (primary treatment one wafer) is adopted well at present.
Ion implantation is a kind of impurity that in semiconducter substrate, mixes, with change substrate electrically and the technology of material properties.In current semi-conductor industry, mix for wafer, ion implantation is a requisite technology.In ion implantation, owing to will consider the influence that reduces streaming, so wafer is being carried out to make wafer and ionic fluid in an angle according to the direction of wafer lattice when ion implantation.And in single-wafer technology, since very strict to the line angle distribution and the uniformity requirement that are injected into wafer, so the angle and the strong density distribution control of stream of line has been proposed new higher requirement.
Because of the demand of semiconductor technology, need ion implantation energy region bigger, so when carrying out the design of ion implanter, the energy region of covering is also big as much as possible.For energy than higher ion; Need very high magnetic field and electric field that it is turned, and because the energy of itself is higher, the energy contamination when straight line freely drifts about or slows down is very little; So necessity does not make its turning, generally when design, adopt straight line path.And for the lower ion of energy; If do not adopt the method for turning; Then its energy contamination when straight line freely drifts about or slows down can be very serious, is prone to cause yield of products very low, wherein; Energy contamination is meant that the energy monochromaticity of ionic fluid is bad, and is bigger in the range of energy distribution of an ionic fluid intermediate ion.
Consider above factor, in existing ion implant systems, generally adopt following ion injection method.As shown in Figure 1, the ionic fluid higher to energy adopts two different ion implantation paths with the lower ionic fluid of energy.Ionic fluid is along straight line path L outgoing, and workpiece (wafer) is in the preset station P place of one on this straight line path L, and becomes a preset angle theta with this straight line path L.To the high energy ion beam in the ionic fluid, it is not carried out any deflection, make it freely drift about or it is quickened or retarded motion along L, until ion implantation with O place, the injection phase completion of preset incident angle θ on workpiece along L.And to the low energy ion beam in the ionic fluid; One speed change turning zone (zone of promptly when making beam bending, it being quickened or slowing down) is set; Before low energy ion beam gets into this speed change turning zone; Earlier it is adjusted to path L ', and then in this speed change is turned the zone, straight line path L is returned in its deflection, and make its acceleration or deceleration simultaneously; So that high energy and low energy line finally converge on the same paths L, to guarantee that all O sentences incident angle θ and accomplishes ion implantation ionic fluid in the injection phase of wafer.But; There is certain shortcoming in this method for implanting: owing to need before low energy ion beam gets into speed change turning zone, just carry out deflection to it in advance; And outside speed change turning zone, carry out beam bending not only relatively during consumption energy consumption, and can the optical characteristics of line be exerted an influence, thus the line in this method to regulate difficulty bigger; And can't make ionic fluid keep well stability; In addition, the adjustment time that the line toggle path is consumed is also longer, is unfavorable for improving the utilising efficiency of line.
Summary of the invention
The technical problem that the present invention will solve is to regulate stability and the lower defective of line utilising efficiency that difficulty is higher, can't keep ionic fluid in order to overcome ion injection method line of the prior art, provide a kind of line regulate difficulty lower, can make ionic fluid keep satisfactory stability property and the higher ion injection method of line utilising efficiency.
The present invention solves above-mentioned technical problem through following technical proposals: a kind of ion injection method; In the method, the high energy ion beam in the ionic fluid of path outgoing is along a straight line injected a workpiece with a preset incident angle, wherein this workpiece is in the preset station place of one on this straight line path; Its characteristics are; Through electrical effect or magnetic effect, make the low energy ion beam in this ionic fluid carry out an at least deflection, and adjust the position and/or the angle of this workpiece with respect to this preset station; So that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
Preferably, when making this low energy ion beam carry out deflection, make its acceleration or deceleration.
Preferably; Make this low energy ion beam carry out twice deflection; And with respect to the angle of this this workpiece of preset station rotation, so that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
Preferably; Make this low energy ion beam carry out twice deflection; And with respect to the position of this preset this workpiece of station translation, so that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
Preferably; Make this low energy ion beam carry out a deflection; And with respect to the angle of this preset this workpiece of station rotation and the position of this workpiece of translation; So that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
Preferably; Make this low energy ion beam carry out twice deflection; And with respect to the angle of this preset this workpiece of station rotation and the position of this workpiece of translation; So that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
Positive progressive effect of the present invention is: the present invention did not adjust its line path before low energy ion beam gets into speed change turning zone; And only in speed change is turned the zone, it is carried out deflection and carry out simultaneously quickening or deceleration control; Therewith correspondingly, the method for position or the angle through the adjustment workpiece guarantees that the injection path of high energy and low energy ion beam all satisfies the requirement of angle distribution and position distribution.Because the deflection in speed change is turned the zone realizes relatively more easily; Just can reduce the overall difficulty that line is regulated thus, and, therefore can keep the optical characteristics of line better owing to before speed change is turned the zone, need not carry out the line adjustment; Guarantee that ionic fluid has satisfactory stability property; Be convenient to halved tie stream more and control, and can greatly shorten the adjustment time that the line toggle path is consumed, significantly improve the utilising efficiency of line.
Description of drawings
Fig. 1 is the synoptic diagram of existing ion injection method.
Fig. 2 is the synoptic diagram of first embodiment of ion injection method of the present invention.
Fig. 3 is the synoptic diagram of second embodiment of ion injection method of the present invention.
Fig. 4 is the synoptic diagram of the 3rd embodiment of ion injection method of the present invention.
Fig. 5 is the synoptic diagram of the 4th embodiment of ion injection method of the present invention.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to specify technical scheme of the present invention.
Shown in Fig. 2-5, in ion injection method of the present invention, still adopt existing means to handling along the high energy ion beam in the ionic fluid of straight line path L outgoing; That is, it is not carried out any deflection, make it freely drift about or it is quickened or retarded motion along L along L; Until accomplishing ion implantation with the O place, injection phase of preset incident angle θ on workpiece; In this injection process, workpiece is placed in the preset station P place on this straight line path L, and becomes to preset angle theta with this straight line path L.And to the low energy ion beam in the ionic fluid; The present invention makes original same low energy ion beam along this straight line path L direction carry out an at least deflection through electrical effect or magnetic effect, and in the present embodiment; When making line carry out this at least deflection, it is quickened or deceleration control (this zone that makes line carry out deflection and speed change simultaneously is so-called speed change and turns regional); That is, different with existing means is that this method in the present embodiment is not adjusted at the regional halved tie flow path before of this speed change turning; But in getting into this speed change turning zone; Just make this low energy ion beam carry out an at least deflection, and because the line path before this speed change is turned the zone does not change, this make low energy ion beam finally reach when injecting station; Its aligned injection phase and/or implant angle can change with respect to the high energy ion beam of zero deflection; Therefore, can reach the requirement of angle distribution and position distribution equally in order to ensure the injection of low energy ion beam, correspondingly; With respect to the position and/or the angle of this preset this workpiece of station P adjustment, accomplish ion implantation at O place, the injection phase of this workpiece with this preset incident angle θ equally to guarantee this low energy ion beam.Wherein, can utilize known electrical effect or magnetic effect to realize, then can carry out, not give unnecessary details so all do not do at this by existing equipment to the position of workpiece and/or the adjustment of angle to the deflection of ionic fluid.
Particularly, there are following four kinds of modes to adjust the position and/or the angle of workpiece, to satisfy the requirement of ion implantation angle distribution and position distribution.
As shown in Figure 2, through electrical effect or magnetic effect, make this low energy ion beam in this speed change turning zone, carry out the deflection of twice suitable angle; Thereby it is compared with the high energy ion beam of zero deflection; Be in the O place, injection phase of workpiece equally, but deflection δ has taken place in implant angle, correspondingly; The angle δ that this Workpiece Rotating is same makes it arrive the first station P1, and this first station P1 makes that this low energy ion beam still can keep accomplishing injection at O place, the injection phase of workpiece with preset incident angle θ.
Embodiment 2
As shown in Figure 3, through electrical effect or magnetic effect, make this low energy ion beam in this speed change turning zone, carry out the deflection of twice suitable angle; Thereby it is compared with the high energy ion beam of zero deflection; Have same implant angle θ, but this moment, aligned then no longer was the injection phase O of workpiece, correspondingly; With this workpiece translational motion to the second station P2, this second station P2 makes that this low energy ion beam still can keep accomplishing injection at O place, the injection phase of workpiece with preset incident angle θ.
Embodiment 3
As shown in Figure 4; Through electrical effect or magnetic effect; Make this low energy ion beam in this speed change turning zone, carry out once the suitably deflection of angle, thereby it is compared with the high energy ion beam of zero deflection, not only deflection has taken place in implant angle; And aligned also no longer is the injection phase O of workpiece at this moment; Correspondingly, this workpiece is carried out angle rotation and position translation makes it arrive the 3rd station P3, the 3rd station P3 makes that this low energy ion beam still can keep accomplishing injection at O place, the injection phase of workpiece with preset incident angle θ.
Embodiment 4
As shown in Figure 5; Through electrical effect or magnetic effect; Make this low energy ion beam in this speed change turning zone, carry out the deflection of twice suitable angle, thereby it is compared with the high energy ion beam of zero deflection, not only deflection has taken place in implant angle; And aligned also no longer is the injection phase O of workpiece at this moment; Correspondingly, this workpiece is carried out angle rotation and position translation makes it arrive the 4th station P4, the 4th station P4 makes that this low energy ion beam still can keep accomplishing injection at O place, the injection phase of workpiece with preset incident angle θ.
In sum; The present invention has reduced the overall difficulty that line is regulated owing to before speed change is turned the zone, do not carry out the adjustment of line path, has kept the optical characteristics of line better; Guaranteed that ionic fluid has satisfactory stability property; Be convenient to halved tie stream more and control, and can greatly shorten the adjustment time that the line toggle path is consumed, improved the utilising efficiency of line.
Though more than described embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited appended claims.Those skilled in the art can make numerous variations or modification to these embodiments under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.
Claims (5)
1. ion injection method; In the method; High energy ion beam in the ionic fluid of path outgoing is along a straight line injected a workpiece with a preset incident angle, and wherein this workpiece is in the preset station place of one on this straight line path, it is characterized in that; Through electrical effect or magnetic effect; Make the low energy ion beam in this ionic fluid carry out an at least deflection, and with respect to the position and/or the angle of this this workpiece of preset station adjustment, so that this low energy ion beam injects this workpiece with this preset incident angle; And this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece; When making this low energy ion beam carry out deflection, make its acceleration or deceleration, this low energy ion beam is quickened or the zone of slowing down is the speed change zone of turning when carrying out deflection, turn and just make this low energy ion beam carry out deflection in the zone up to getting into this speed change.
2. ion injection method as claimed in claim 1; It is characterized in that; Make this low energy ion beam carry out twice deflection; And with respect to the angle of this this workpiece of preset station rotation, so that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
3. ion injection method as claimed in claim 1; It is characterized in that; Make this low energy ion beam carry out twice deflection; And with respect to the position of this preset this workpiece of station translation, so that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
4. ion injection method as claimed in claim 1; It is characterized in that; Make this low energy ion beam carry out a deflection; And with respect to the angle of this preset this workpiece of station rotation and the position of this workpiece of translation, so that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
5. ion injection method as claimed in claim 1; It is characterized in that; Make this low energy ion beam carry out twice deflection; And with respect to the angle of this preset this workpiece of station rotation and the position of this workpiece of translation, so that this low energy ion beam injects this workpiece with this preset incident angle, and this low energy ion beam is consistent with the injection phase of this high energy ion beam on this workpiece.
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| CN200910201397XA CN101838797B (en) | 2009-12-18 | 2009-12-18 | Ion implantation method |
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| CN200910201397XA CN101838797B (en) | 2009-12-18 | 2009-12-18 | Ion implantation method |
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| CN101838797B true CN101838797B (en) | 2012-07-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102791073A (en) * | 2011-05-17 | 2012-11-21 | 上海凯世通半导体有限公司 | Beam transmission system and transmission method thereof |
| KR101943553B1 (en) * | 2014-11-25 | 2019-04-18 | 삼성전자주식회사 | Method of forming a pattern using ion beams of bilateral symmetry, method of forming a magnetic memory device using the same, and ion beam apparatus generation ion beams of bilateral symmetry |
| CN105895486A (en) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | Charged particle beam deflection magnetic field structure and ion implantation machine using structure |
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| CN1377509A (en) * | 1999-10-05 | 2002-10-30 | 瓦里安半导体设备联合公司 | High transmission, low energy beamline architecture for ion implanter |
| US6710358B1 (en) * | 2000-02-25 | 2004-03-23 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing energy contamination of low energy ion beams |
| CN1806309A (en) * | 2003-06-13 | 2006-07-19 | 艾克塞利斯技术公司 | A hybrid magnetic/electrostatic deflector for ion implantation systems |
| CN1830054A (en) * | 2003-06-10 | 2006-09-06 | 瓦里安半导体设备公司 | Ion implanter having enhanced low energy ion beam transport |
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| CN1979749A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Uniform magnetic-field parallel beam lens system |
| CN101189696A (en) * | 2005-06-07 | 2008-05-28 | 瓦里安半导体设备公司 | Technique for ion beam angle spread control |
| CN101563750A (en) * | 2006-09-29 | 2009-10-21 | 瓦里安半导体设备公司 | Technique for improved ion beam transport |
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2009
- 2009-12-18 CN CN200910201397XA patent/CN101838797B/en active Active
Patent Citations (8)
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| CN1377509A (en) * | 1999-10-05 | 2002-10-30 | 瓦里安半导体设备联合公司 | High transmission, low energy beamline architecture for ion implanter |
| US6710358B1 (en) * | 2000-02-25 | 2004-03-23 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing energy contamination of low energy ion beams |
| CN1830054A (en) * | 2003-06-10 | 2006-09-06 | 瓦里安半导体设备公司 | Ion implanter having enhanced low energy ion beam transport |
| CN1806309A (en) * | 2003-06-13 | 2006-07-19 | 艾克塞利斯技术公司 | A hybrid magnetic/electrostatic deflector for ion implantation systems |
| CN1906728A (en) * | 2003-12-04 | 2007-01-31 | 日新意旺机械股份公司 | Ion beam apparatus |
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Non-Patent Citations (1)
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| JP特开平10-223172A 1998.08.21 |
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Address after: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee after: KINGSTONE SEMICONDUCTOR COMPANY LTD. Address before: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee before: Shanghai Kaishitong Semiconductor Co., Ltd. |