CN105895486A - Charged particle beam deflection magnetic field structure and ion implantation machine using structure - Google Patents
Charged particle beam deflection magnetic field structure and ion implantation machine using structure Download PDFInfo
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- CN105895486A CN105895486A CN201410788972.1A CN201410788972A CN105895486A CN 105895486 A CN105895486 A CN 105895486A CN 201410788972 A CN201410788972 A CN 201410788972A CN 105895486 A CN105895486 A CN 105895486A
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Abstract
The invention relates to a magnetic field structure for deflecting charged particle beams. With the novel magnetic field structure provided by the invention adopted, when being deflected in a horizontal plane, beams can be wholly deflected in a vertical direction. When the magnetic field structure is applied to an ion implantation machine, the deflection of beams can be realized in a vertical direction without an additional deflection structure required, and therefore, the length of the beam line of the ion implantation machine can be shortened.
Description
Technical field
The present invention relates to a kind of magnetic field structure, particularly relate to a kind of magnetic field structure in ion implantation apparatus.
Background technology
Ion implantation apparatus is widely used in field of semiconductor manufacture.In ion implantation apparatus, it is often necessary to add
Deflection structure halved tie flows to horizontal deflection, to realize some specific purposes.Such as, inject at the big line of mental retardation
In machine, general employing end slows down and realizes mental retardation injection.Ion beam current kept higher-energy before slowing down,
This is conducive to the transmission of high-intensity beam stream.Although vacuum is higher in ion implantation apparatus, but still there is portion of residual
Gas, the ion in line it may happen that charge-exchange, makes ion become neutral atom or divide with residual gas
Son, neutral atom or molecule that ad-hoc location produces are likely to reach injection target.Due to neutral atom or molecule
Not by speed reduction influence, therefore Implantation Energy relatively charged particle is high, therefore produces so-called energy contamination problem.
For eliminating energy contamination, typically after slowing down, add an electric or magnetic deflection structure, make ion enter along deflection track
Entering and inject target, neutral atom or molecule are not affected by electric field or magnetic field, move along a straight line, and will not inject in target,
Therefore energy contamination can be eliminated.
Add extra deflection structure and can serve problem by band.Such as, add extra deflection structure and make line
Elongated to the transmission range of target.In the case of the big line of mental retardation, owing to line space charge effect is relatively strong, relatively
Long bunch is unfavorable for the transmission of line.
Summary of the invention
The embodiment provides charged particle line magnetic deflection field structure, this charged particle line deflects
Magnetic field structure can also realize in addition to realizing general line analysis and parallelization function at horizontal plane simultaneously
The line entirety deflection of vertical direction, thus be not necessarily and realize vertical deflection and add extra deflection structure,
Shorten the beam transfer under the big beam status of bunch length, beneficially mental retardation.
In one embodiment of the invention, charged particle line magnetic deflection field structure includes pair of magnets, two
The thickness linear change of magnet, the pole-face away from line of two magnets is parallel to each other, one of them magnet with
The close pole-face of line is parallel with horizontal plane, the pole-face close with line of another magnet and horizontal plane
Not parallel.
In another embodiment of the presently claimed invention, charged particle line magnetic deflection field structure includes a pair magnetic
Body, in two magnets, at least one thickness is uniform, and the pole-face close with line of one of them magnet is put down with level
Face is parallel, and the pole-face close with line of another magnet is not parallel with horizontal plane.
Another embodiment of the present invention is an ion implantation apparatus, and this ion implantation apparatus includes ion source, draws electricity
The parts such as pole, analyzer, analysis diaphragm, parallel lens, deceleration/deflection structure, injection target chamber, wherein
Parallel lens and analyzer at least one be the charged particle line magnetic deflection field knot in above-mentioned two embodiment
Structure.
Accompanying drawing explanation
In each figure, as shown in the FIG., beam direction is Z-direction to coordinate system, and X-direction is horizontal direction,
Y-direction is vertical direction, and letter b represents magnetic induction.
Fig. 1 is conventional uniform field dipolar magnet structural representation.
Fig. 2 is conventional non homogen field dipolar magnet structural representation.
Fig. 3 is the charged particle line magnetic deflection field structural representation according to an embodiment of the invention.
Fig. 4 is the charged particle line magnetic deflection field structural representation according to another embodiment of the present invention.
Fig. 5 is the structural representation of the ion implantation apparatus according to another embodiment of the invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention being described in further detail, presently preferred embodiments of the present invention is shown in these
In accompanying drawing.These embodiments are provided so that in order to the content making announcement is more thorough and complete, and by the present invention's
Scope fully passes to those skilled in the art.But, the present invention can be presented as many different forms,
And should not be limited to the embodiment cited by this specification.
Fig. 1 is conventional uniform field dipolar magnet, and 101 and 102 is two magnetic poles being arranged at line both sides,
Magnetic direction as it can be seen, beam direction as indicated at 103.According to basic physics principle, line is only at XZ
Plane deflects.
Fig. 2 is conventional non-uniform field dipolar magnet, and 201 and 202 is two magnetic poles being arranged at line both sides,
In addition to central plane 203, all there are X-direction component and Y-direction component in magnetic field.Y-direction component makes line exist
XZ plane deflects.Owing to the direction of the X-direction component above and below central plane 203 is different, X
Durection component can make line focus on to central plane 203 or defocus.General ion implantation apparatus utilizes Fig. 2
Shown non homogen field realizes vertical direction and focuses on.
In ion implantation apparatus, it is often necessary to make line deflect in the Y direction to realize eliminating energy contamination
Understanding etc. purpose, such as Fig. 1 and Fig. 2, conventional uniform field and non homogen field dipolar magnet all can not realize bundle
Stream Y-direction entirety deflection.
Fig. 3 is the charged particle line magnetic deflection field structure according to one embodiment of the invention, 301 and 302
For being arranged at the magnetic pole of line both sides.It can easily be seen that due to magnetic field component direction in X direction in such cases
Identical, therefore can realize line overall along Y-direction skew.
Fig. 4 be the charged particle line magnetic deflection field structure according to another embodiment of the present invention it is easy to see that
Still can realize line overall along Y-direction skew.Fig. 4 structure its lower magnetic pole thickness compared with Fig. 3 structure is uniform,
Convenient installation in a practical situation.
Fig. 5 is the ion implantation apparatus according to another embodiment of the present invention.501 is ion source, and 502 for drawing
Going out electrode, 503 is analyzer, and 504 for analyzing diaphragm, and 505 is parallel lens, and 506 is slowing-down structure,
507 for injecting target chamber, and arrow represents beam direction, and in the case of non-parallel beam, arrow represents beam center grain
Sub-trajectory direction.Analyzer in ion implantation apparatus shown in Fig. 5 and parallel lens at least one have employed
Charged particle line magnetic deflection field structure shown in Fig. 3 or Fig. 4.Fig. 3 or Fig. 4 institute is used with parallel lens
As a example by showing structure, after line is by parallel lens, line is overall along Y-direction while realizing parallelization
Deflection, then after deceleration/deflection structure afterwards, can realize eliminating energy contamination.
Specific embodiment described in this specification will not be in the range limit present invention.It practice, more than according to
Description and accompanying drawing, in addition to the embodiment described in this specification, other various embodiments of the present invention and
The improved form of the present invention all becomes apparent for those of skill in the art.Such as, easily
The upper magnetic pole expecting structure shown in Fig. 4 also can be the uniform magnetic pole of thickness.Therefore, these embodiments and improvement
Form should belong to the scope of the invention.Although it addition, this specification being in order to specific purposes is in specific field
Describe the present invention with specific implementation under conjunction, but it will be appreciated by those of skill in the art that it has
Being not limited to this by property, the present invention can implement under multiple occasion in a beneficial manner for multiple use.
Claims (9)
1. a charged particle line magnetic deflection field structure, by overall by the charged particle line of this magnetic field structure
Deflect to Y-direction, wherein with the transmission direction of this charged particle line as Z-direction, to be perpendicular to Z
Direction and the direction being parallel to level ground are X-direction, to be perpendicular to Z-direction and to be perpendicular to flatly
The direction in face is Y-direction.This charged particle line magnetic deflection field structure includes:
First magnet, it is positioned at the side of Y-direction of charged particle line.
Second magnet, it is positioned at the opposite side of Y-direction of the charged particle line corresponding with the first magnet.
Wherein among the first magnet and the second magnet, magnet is parallel to XZ near the pole-face of beam direction and puts down
Face, another magnet is not parallel with XZ plane near the pole-face of line.Between first magnet and the second magnet
Gap width gradual change in X direction, with produce along X and the magnetic field of Y-direction.Generation Lip river, Y-direction magnetic field
Lun Zili makes charged particle line make charged particle beam at XZ plane intrinsic deflection, X-direction magnetic field Lorentz force
Stream deflects in the y direction.
2. charged particle line magnetic deflection field structure as claimed in claim 1, its first magnet and the second magnet
Can be electromagnet or permanent magnet.
3. charged particle line magnetic deflection field structure as claimed in claim 1, its first magnet and the second magnet
Thickness can be uniform or linear change.
4. charged particle line magnetic deflection field structure as claimed in claim 1, its charged particle line can be from
Sub-line or electronic beam current, wherein ion beam current can be cation or anion, and electronics also can be negative electricity
Son or positron.
5. an ion implantation apparatus, comprising:
Ion source, is used for producing ion beam.
Extraction electrode, for being drawn from ion source by ion, makes ion transmit to parts afterwards.
Analyzer, is used for separating different types of ion.
Analyze diaphragm, for selecting the ion of the kind of required injection.
Parallel lens, for making the ion beam focused on by analyzer become parallel ion beam.
Deceleration/deflection structure, halved tie stream slows down, and to realize the mental retardation injection of ion, halved tie simultaneously flows to
Horizontal deflection.
Inject target chamber, inject workpiece with carrying and carry out necessary mechanical movement ion implanting needed for realizing.
Wherein said analyzer and parallel lens are magnetic field structure, and in both, at least one is such as claim 1
Described charged particle line magnetic deflection field structure.
6. ion implantation apparatus as claimed in claim 5, wherein said analyzer and the magnetic field structure of parallel lens
Can be electric magnet or permanent magnet.
7. ion implantation apparatus as claimed in claim 5, the described ion beam that described ion source produces can be just from
Son bundle or anion beam.
8. ion implantation apparatus as claimed in claim 5, also includes that focusing structure is to realize gathering in beam transfer
Jiao, wherein focusing structure can be electrofocusing's structure or magnetic focusing structure.
9. ion implantation apparatus as claimed in claim 5, it can be spot beam or broadband bundle to target line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410788972.1A CN105895486A (en) | 2014-12-18 | 2014-12-18 | Charged particle beam deflection magnetic field structure and ion implantation machine using structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410788972.1A CN105895486A (en) | 2014-12-18 | 2014-12-18 | Charged particle beam deflection magnetic field structure and ion implantation machine using structure |
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| CN105895486A true CN105895486A (en) | 2016-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410788972.1A Pending CN105895486A (en) | 2014-12-18 | 2014-12-18 | Charged particle beam deflection magnetic field structure and ion implantation machine using structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111190215A (en) * | 2018-11-15 | 2020-05-22 | 北京中科信电子装备有限公司 | Bidirectional focusing mass analyzer |
| CN112439131A (en) * | 2019-08-27 | 2021-03-05 | 胡逸民 | X-ray pencil beam scanning intensity modulated therapeutic linear accelerator device |
| CN116666179A (en) * | 2023-06-21 | 2023-08-29 | 广东省新兴激光等离子体技术研究院 | Analyzing magnet structure and wide-range ion source |
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| CN101777481A (en) * | 2003-06-13 | 2010-07-14 | 艾克塞利斯技术公司 | hybrid magnetic/electrostatic deflector for ion implantation systems |
| CN101838797A (en) * | 2009-12-18 | 2010-09-22 | 上海凯世通半导体有限公司 | Ion implantation method |
| CN101901734A (en) * | 2010-04-07 | 2010-12-01 | 胡新平 | Multimode ion implantation machine system and implantation regulating method |
| CN102102190A (en) * | 2009-12-18 | 2011-06-22 | 上海凯世通半导体有限公司 | Ion injection method |
| CN102315065A (en) * | 2010-07-09 | 2012-01-11 | 上海凯世通半导体有限公司 | Beam current transmission system and method |
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2014
- 2014-12-18 CN CN201410788972.1A patent/CN105895486A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777481A (en) * | 2003-06-13 | 2010-07-14 | 艾克塞利斯技术公司 | hybrid magnetic/electrostatic deflector for ion implantation systems |
| CN101838797A (en) * | 2009-12-18 | 2010-09-22 | 上海凯世通半导体有限公司 | Ion implantation method |
| CN102102190A (en) * | 2009-12-18 | 2011-06-22 | 上海凯世通半导体有限公司 | Ion injection method |
| CN101901734A (en) * | 2010-04-07 | 2010-12-01 | 胡新平 | Multimode ion implantation machine system and implantation regulating method |
| CN102315065A (en) * | 2010-07-09 | 2012-01-11 | 上海凯世通半导体有限公司 | Beam current transmission system and method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111190215A (en) * | 2018-11-15 | 2020-05-22 | 北京中科信电子装备有限公司 | Bidirectional focusing mass analyzer |
| CN112439131A (en) * | 2019-08-27 | 2021-03-05 | 胡逸民 | X-ray pencil beam scanning intensity modulated therapeutic linear accelerator device |
| CN112439131B (en) * | 2019-08-27 | 2023-04-07 | 胡逸民 | X-ray pencil beam scanning intensity modulated therapeutic linear accelerator device |
| CN116666179A (en) * | 2023-06-21 | 2023-08-29 | 广东省新兴激光等离子体技术研究院 | Analyzing magnet structure and wide-range ion source |
| CN116666179B (en) * | 2023-06-21 | 2023-12-12 | 广东省新兴激光等离子体技术研究院 | Analyzing magnet structure and wide-range ion source |
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