CN101836263A - 光谱滤光片、包括这样的光谱滤光片的光刻设备、器件制造方法以及由此制造的器件 - Google Patents

光谱滤光片、包括这样的光谱滤光片的光刻设备、器件制造方法以及由此制造的器件 Download PDF

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Publication number
CN101836263A
CN101836263A CN200880108435A CN200880108435A CN101836263A CN 101836263 A CN101836263 A CN 101836263A CN 200880108435 A CN200880108435 A CN 200880108435A CN 200880108435 A CN200880108435 A CN 200880108435A CN 101836263 A CN101836263 A CN 101836263A
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CN
China
Prior art keywords
radiation
wavelength
filter
filter element
spectral filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880108435A
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English (en)
Chinese (zh)
Inventor
M·M·J·W·范赫彭斯
V·Y·班尼恩
W·A·索尔
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ASML Netherlands BV
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ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of CN101836263A publication Critical patent/CN101836263A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/203—Filters having holographic or diffractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200880108435A 2007-09-27 2008-09-26 光谱滤光片、包括这样的光谱滤光片的光刻设备、器件制造方法以及由此制造的器件 Pending CN101836263A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97576407P 2007-09-27 2007-09-27
US60/975,764 2007-09-27
PCT/NL2008/050622 WO2009041818A1 (en) 2007-09-27 2008-09-26 Spectral filter, lithographic apparatus including such a spectral filter, device manufacturing method, and device manufactured thereby

Publications (1)

Publication Number Publication Date
CN101836263A true CN101836263A (zh) 2010-09-15

Family

ID=40185047

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880108435A Pending CN101836263A (zh) 2007-09-27 2008-09-26 光谱滤光片、包括这样的光谱滤光片的光刻设备、器件制造方法以及由此制造的器件

Country Status (8)

Country Link
US (1) US20100259744A1 (enExample)
EP (1) EP2462593A1 (enExample)
JP (1) JP5336497B2 (enExample)
KR (1) KR20100084526A (enExample)
CN (1) CN101836263A (enExample)
NL (1) NL1035979A1 (enExample)
TW (1) TW200921256A (enExample)
WO (1) WO2009041818A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102540556A (zh) * 2010-12-09 2012-07-04 奇景光电股份有限公司 硅基液晶显示装置的彩色滤光物及其制作方法
CN103034066A (zh) * 2011-09-28 2013-04-10 Asml荷兰有限公司 用于控制euv曝光剂量的方法和euv光刻方法及使用这样的方法的设备
CN105190777A (zh) * 2013-03-14 2015-12-23 卡尔蔡司Smt有限责任公司 掩模检测系统的照明光学单元和具有这种照明光学单元的掩模检测系统
CN109036163A (zh) * 2018-08-31 2018-12-18 京东方科技集团股份有限公司 一种显示装置及其环境光检测方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003303A (en) * 2008-08-29 2010-03-11 Asml Netherlands Bv Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby.
DE102009017440A1 (de) * 2009-04-15 2010-10-28 Siemens Aktiengesellschaft Anordnung zur Aufweitung der Partikelenergieverteilung eines Partikelstrahls, Partikeltherapieanlage sowie Verfahren zur Aufweitung der Partikelenergieverteilung eines Partikelstrahls
KR20120081981A (ko) * 2009-09-16 2012-07-20 에이에스엠엘 네델란즈 비.브이. 스펙트럼 퓨리티 필터, 리소그래피 장치, 스펙트럼 퓨리티 필터 제조 방법, 및 리소그래피 장치를 이용한 디바이스 제조 방법
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010041258A1 (de) * 2010-09-23 2012-03-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik mit einem beweglichen Filterelement
DE102013209042A1 (de) * 2013-05-15 2014-05-08 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
NL2013700A (en) * 2013-11-25 2015-05-27 Asml Netherlands Bv An apparatus, a device and a device manufacturing method.

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358422B1 (ko) * 1993-09-14 2003-01-24 가부시키가이샤 니콘 플래인위치결정장치,주사형노광장치,주사노광방법및소자제조방법
US5483387A (en) * 1994-07-22 1996-01-09 Honeywell, Inc. High pass optical filter
NL1008352C2 (nl) * 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
TW498184B (en) * 1999-06-04 2002-08-11 Asm Lithography Bv Method of manufacturing a device using a lithographic projection apparatus, and device manufactured in accordance with said method
US6614505B2 (en) * 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
US6906859B2 (en) * 2002-06-05 2005-06-14 Nikon Corporation Epi-illumination apparatus for fluorescent observation and fluorescence microscope having the same
US6809327B2 (en) * 2002-10-29 2004-10-26 Intel Corporation EUV source box
JP2004317693A (ja) * 2003-04-15 2004-11-11 Mitsubishi Electric Corp 波長フィルタ、露光装置および撮像装置
WO2005017570A2 (en) * 2003-08-06 2005-02-24 University Of Pittsburgh Surface plasmon-enhanced nano-optic devices and methods of making same
JP4369256B2 (ja) * 2004-01-22 2009-11-18 日本板硝子株式会社 分光光学素子
US7453645B2 (en) * 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102540556A (zh) * 2010-12-09 2012-07-04 奇景光电股份有限公司 硅基液晶显示装置的彩色滤光物及其制作方法
CN103034066A (zh) * 2011-09-28 2013-04-10 Asml荷兰有限公司 用于控制euv曝光剂量的方法和euv光刻方法及使用这样的方法的设备
CN105190777A (zh) * 2013-03-14 2015-12-23 卡尔蔡司Smt有限责任公司 掩模检测系统的照明光学单元和具有这种照明光学单元的掩模检测系统
CN109036163A (zh) * 2018-08-31 2018-12-18 京东方科技集团股份有限公司 一种显示装置及其环境光检测方法
CN109036163B (zh) * 2018-08-31 2021-08-06 京东方科技集团股份有限公司 一种显示装置及其环境光检测方法

Also Published As

Publication number Publication date
JP5336497B2 (ja) 2013-11-06
TW200921256A (en) 2009-05-16
US20100259744A1 (en) 2010-10-14
EP2462593A1 (en) 2012-06-13
WO2009041818A1 (en) 2009-04-02
JP2010541234A (ja) 2010-12-24
KR20100084526A (ko) 2010-07-26
NL1035979A1 (nl) 2009-03-30

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