CN101833193A - Semi-transparent type crystal liquid display, transparent substrate and manufacturing method thereof - Google Patents
Semi-transparent type crystal liquid display, transparent substrate and manufacturing method thereof Download PDFInfo
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- CN101833193A CN101833193A CN200910079951A CN200910079951A CN101833193A CN 101833193 A CN101833193 A CN 101833193A CN 200910079951 A CN200910079951 A CN 200910079951A CN 200910079951 A CN200910079951 A CN 200910079951A CN 101833193 A CN101833193 A CN 101833193A
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Abstract
The invention discloses a semi-transparent type crystal liquid display, a transparent substrate and a manufacturing method thereof. The semi-transparent type crystal liquid display has different thicknesses in a light transparent area and a light refection area, and a color membrane substrate has different thicknesses in the light transparent area and the light refection area, or the color membrane substrate and an array substrate respectively have different thicknesses in the light transparent area and the light refection area, and then the thickness of the crystal liquid layer is (n+1) lamba/2 in the light transparent area and is (m+1) lamba/4 in the light reflection area, wherein n and m are 0 or a positive integer. The invention can enhance the display property, reduce the using quantity of mask plates in the manufacturing process, simplify the process, and decrease the cost.
Description
Technical field
The present invention relates to semi-transparent type crystal liquid display, transparency carrier and manufacture method thereof, especially relating to can simplified structure and semi-transparent type crystal liquid display and transparency carrier, color membrane substrates, array base palte and the manufacture method thereof of processing step.
Background technology
LCD (Liquid Crystal Display abbreviates LCD as) is a kind of main panel display apparatus (Flat Panel Display abbreviates FPD as).
According to the direction of an electric field that drives liquid crystal, LCD is divided into vertical electric field type LCD and horizontal electric field type LCD.The vertical electric field type LCD comprises: twisted-nematic (TwistNematic abbreviates TN as) type LCD; The horizontal electric field type LCD comprises: boundary electric field switches (Fringe Field Switching abbreviates FFS as) type LCD, and copline is switched (In-Plane Switching abbreviates IPS as) type LCD.
Wherein, the vertical electric field type LCD need form pixel electrode on array base palte, form public electrode on color membrane substrates; Yet the horizontal electric field type LCD need form pixel electrode and public electrode simultaneously on array base palte.Therefore, during the array base palte of production technique electric field type LCD, need extra increase once to form the mask process of public electrode.
According to the display mode of LCD, LCD is divided into through mode LCD, semi-transparent type crystal liquid display and reflective liquid-crystal display.Wherein, the through mode LCD light display frame of shining out from backlight by transmission; The light display frame that light that semi-transparent type crystal liquid display shines out from backlight by transmission and reflection are come in from external irradiation; The light display frame that reflective liquid-crystal display is come in from external irradiation by reflection.
Wherein, the array base palte of reflective liquid-crystal display forms pixel electrode by reflective metals; The array base palte of through mode LCD forms pixel electrode by the electrically conducting transparent material.
Describe existing semi-transparent type crystal liquid display below in detail.
Fig. 1 is the sectional view of existing semi-transparent type crystal liquid display.As shown in Figure 1, semi-transparent type crystal liquid display comprises: color membrane substrates, array base palte and liquid crystal layer.Form alignment films on color membrane substrates and the array base palte respectively, carry out box technology then and inject liquid crystal, form liquid crystal layer 40.Semi-transparent type crystal liquid display can be divided into a plurality of pixel regions by function, and each pixel region comprises open area 1 and non-open area 2, and open area 1 can be divided into reflection region 11 and light transmissive region 12 again.
Color membrane substrates comprises transparency carrier 20 and color resin 22, can also be formed with black matrix 21.In addition, on the color membrane substrates of TN type and VA type LCD, also be formed with public electrode (not shown).Color resin 22 comprises the resin of redgreenblue.The color resin 22 and the black matrix 21 of three kinds of colors alternately are formed on the color membrane substrates.
Array base palte comprises transparency carrier 30, signal wire (not shown), TFT pixel electrode 38, resin bed 50 and reflective metal layer 60.Signal wire comprises grid line and data line, also is formed with public electrode wire on the array base palte of FFS type and IPS type LCD.TFT is the on-off element of having chance with, and it comprises: gate electrode 31, gate insulation layer 32, semiconductor layer 33, doping semiconductor layer 34, source electrode 35, drain electrode 36 and passivation layer 37.Wherein, gate electrode 31 is connected with grid line, and source electrode 35 is connected with data line, and drain electrode 36 and pixel electrode 38 are connected by passivation layer via hole.
The principle of work of array base palte is as follows: when passing through Continuity signal on the grid line, gate electrode 31 makes active layer (semiconductor layer 33 and doping semiconductor layer 34) conduct electricity, the data-signal that makes data line through source electrode 35 by being formed at the TFT raceway groove on the active layer, input to drain electrode, input to pixel electrode 38 through passivation layer via hole again, at this moment, pixel electrode 38 is formed for driving the electric field that liquid crystal rotates with public electrode (being connected with public electrode wire) according to data-signal.
Also need to form resin bed 50 and reflective metal layer 60 in the reflection region 11 on the array base palte of semi-transparent type crystal liquid display.
The manufacture method of the array base palte of existing semi-transparent type crystal liquid display is as follows:
Step 3, utilize magnetron sputtering or thermal evaporation method, metallic film is leaked in deposition one deck source on substrate, the material that metallic film is leaked in the source uses metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, form source electrode, drain electrode and data line figure by composition technology in non-open area with the 3rd mask plate (source-drain electrode mask plate), and between source electrode and drain electrode, form TFT raceway groove figure.
Step 4, utilize process for chemical vapor deposition of materials with via, deposition one deck passivation layer film on whole base plate, the material of passivation layer film is silicon nitride normally, with the 4th mask plate (passivation layer mask plate) by composition technology in drain electrode position formation passivation layer via hole.
Step 5, utilize magnetron sputtering or thermal evaporation method, deposition one deck pixel electrode layer film on substrate, the material of pixel electrode layer film is generally tin indium oxide etc., form pixel electrode by composition technology in the open area with the 5th mask plate (pixel electrode mask plate), and pixel electrode is connected with drain electrode by passivation layer via hole.
Step 6, utilize chemical vapor deposition, deposition layer of transparent film forms alignment films by friction process on substrate.
Step 7, utilize chemical vapor deposition, deposition one deck resin bed forms the resin bed figure with the 6th mask plate (resin bed mask plate) by composition technology on substrate, and the formation embossing.
Step 8 is utilized magnetron sputtering or thermal evaporation method, deposition one deck reflective metal film, and the material of reflective metals is generally aluminium etc., forms the reflective metals layer pattern with the 7th mask plate (reflective metal layer mask plate) by composition technology.
How reducing the use number of mask plate, is cost-effective main means in the manufacturing process in the industry.Disclosed technology has above-mentioned second mask plate and the 3rd mask plate with a two method of transferring mask plates to replace.Be specially: deposit gate insulation layer, semiconductor layer, doping semiconductor layer and source successively and leak metal level, form TFT raceway groove, source/drain electrode and data line with two mask plates of transferring.
Also have is exactly with a two method of transferring mask plate to replace the 4th and the 5th mask plate.Be specially deposit passivation layer, form via hole, residual photoresist is carried out ashing with two mask plates of transferring, and the pixel deposition electrode film, after peeling off (lift off) residual photoresist, form pixel electrode.
The difference of existing semi-transparent type crystal liquid display and common through mode LCD is: the resin bed and the reflective metal layer that form in the reflection region on the array base palte.The purpose that this resin bed and reflective metal layer are set is, the phase differential of the emergent light of elimination light transmissive region and the emergent light of reflection region, this also is the basic demand of semi-transparent type crystal liquid display display image, normal display image then in the time of can not satisfying.
It is as follows that the phase differential of the emergent light of light transmissive region and the emergent light of reflection region produces reason: the incident light of reflection region need be through penetrating behind twice liquid crystal layer, but the incident light of light transmission region only needs can penetrate through a liquid crystal layer, when not having to give prominence to the resin bed that is arranged on the array base palte, because thickness of liquid crystal layer is even, therefore unavoidably to produce phase differential.
In the prior art, reach and change thickness of liquid crystal layer, also have by the scheme of compensation film is set on array base palte with the technical scheme that solves the problem that forms phase differential except passing through as shown in Figure 1 is provided with outstanding resin bed.The compensation film needs to compensate the phase differential of (2n+1) λ/4 degree, and wherein n is 0 or positive integer, and λ is a light wavelength.But, the design difficulty height of compensation film, cost is higher.
For the technical scheme of as shown in Figure 1 formation resin bed and reflective metal layer, also there is following shortcoming:
1, this resin bed and the reflective metal layer that is formed at array base palte top because outstanding higher, can influence the orientation of liquid crystal molecule, causes liquid crystal arrangement inhomogeneous and light leak takes place influence display performance.
2, on the manufacturing process, comparing with the manufacturing of general through mode LCD needs the step that carry out forming the step of resin bed more and form the reflection horizon, needs two mask plates of many employings, and not only technology is consuming time longer, and cost is very high.
Summary of the invention
The purpose of this invention is to provide a kind of semi-transparent type crystal liquid display, transparency carrier and manufacture method thereof, can improve display performance, and reduce the use number of mask plate, simplify technology, reduce cost.
For achieving the above object, the invention provides a kind of semi-transparent type crystal liquid display, it comprises array base palte, color membrane substrates and liquid crystal layer, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, each pixel region comprises light transmissive region and reflection region, described array base palte has different thickness in described light transmissive region and described reflection region, described color membrane substrates has different thickness or described color membrane substrates and array base palte and have different thickness respectively in described light transmissive region and described reflection region in described light transmissive region and described reflection region, make the thickness of liquid crystal layer in light transmissive region and reflection region satisfy formula one and formula two;
Formula one: d
T=(n+1) λ/2, d
TBe the thickness of liquid crystal layer in described light transmissive region, n is 0 or positive integer;
Formula two: d
F=(2m+1) λ/4, d
FBe the thickness of liquid crystal layer in described reflection region, m is 0 or positive integer.
For achieving the above object, the present invention also provides a kind of transparency carrier that is used for semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, each pixel region comprises light transmissive region and reflection region, described transparency carrier has different thickness in described light transmissive region and described reflection region, the difference of thickness is (2n+1) λ/4, and n is 0 or positive integer.
For achieving the above object, the present invention also provides a kind of manufacture method that is used for the transparency carrier of semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, and each pixel region comprises light transmissive region and reflection region, comprising:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and wherein the zone of etching is corresponding to described light transmissive region or described reflection region.
For achieving the above object, the present invention also provides a kind of manufacture method that is used for the color membrane substrates of semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, and each pixel region comprises light transmissive region and reflection region, comprising:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and forming the degree of depth is the groove of (2n+1) λ/4, and wherein n is 0 or positive integer, and wherein said groove is corresponding to described light transmissive region or described reflection region;
Step 3: on described surface, form color resin.
For achieving the above object, the present invention also provides a kind of manufacture method that is used for the array base palte of semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, and each pixel region comprises light transmissive region and reflection region, comprising:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and forming the degree of depth is the groove of (2n+1) λ/4, and wherein n is 0 or positive integer, and wherein said groove is corresponding to described light transmissive region or described reflection region;
Step 3: on described surface, form signal wire, reflective metal layer, TFT and pixel electrode figure.
As shown from the above technical solution, the liquid crystal panel of semi-transparent type crystal liquid display of the present invention and manufacture method thereof, by changing array base palte and/or the thickness of color membrane substrates in reflection region and light transmission region, make the thickness of liquid crystal layer in light transmissive region be (n+1) λ/2, n is 0 or positive integer, thickness in reflection region is (2m+1) λ/4, m is 0 or positive integer, eliminated the phase differential of the emergent light of the emergent light of light transmissive region and reflection region thus, and compared to existing technology, do not need outstanding resin bed and reflective metal layer or the compensation film that is formed on the array base palte, simplify the structure, and eliminated the influence that brings as outstanding resin bed that forms and reflective metal layer in the prior art display performance.
Description of drawings
Fig. 1 is the sectional view of existing semi-transparent type crystal liquid display;
Fig. 2 is the sectional view of semi-transparent type crystal liquid display first embodiment of the present invention;
Fig. 3 is the sectional view of semi-transparent type crystal liquid display second embodiment of the present invention;
Fig. 4 is the sectional view that is used for transparency carrier one embodiment of semi-transparent type crystal liquid display of the present invention;
Fig. 5 is the process flow diagram of manufacture method that is used for the transparency carrier of liquid crystal display of the present invention.
Embodiment
Semi-transparent type crystal liquid display of the present invention, it comprises array base palte, color membrane substrates and liquid crystal layer, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, each pixel region comprises light transmissive region and reflection region, described array base palte has different thickness in described light transmissive region and described reflection region, described color membrane substrates has different thickness or described color membrane substrates and array base palte and have different thickness respectively in described light transmissive region and described reflection region in described light transmissive region and described reflection region, make the thickness of liquid crystal layer in light transmissive region and reflection region satisfy formula one and formula two; Formula one: d
T=(n+1) λ/2, d
TBe the thickness of liquid crystal layer in described light transmissive region, n is 0 or positive integer; Formula two: d
F=(2m+1) λ/4, d
FBe the thickness of liquid crystal layer in described reflection region, m is 0 or positive integer.Thus, eliminated the phase differential of the emergent light of the emergent light of light transmissive region and reflection region, and compared to existing technology, do not need outstanding resin bed and reflective metal layer or the compensation film that is formed on the array base palte, simplify the structure, and stopped the resin bed of outstanding formation in the prior art and the influence that reflective metal layer brings display performance.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 2 is the sectional view of semi-transparent type crystal liquid display first embodiment of the present invention.As shown in Figure 2, the semi-transparent type crystal liquid display of present embodiment can be divided into a plurality of pixel regions by function, and each pixel region comprises open area 1 ' and non-open area 2 ', and open area 1 ' can be divided into reflection region 11 ' and light transmissive region 12 ' again.Open area 1 ' is the normal zone of display image.Non-open area 2 ' is normal display image, therefore the zone of being blocked by the black matrix 21 ' on the color membrane substrates.Light transmissive region 12 ' is for coming the zone of display image according to the light that sends in the module backlight (not shown).Reflection region 11 ' is for coming the zone of display image by the light that reflects outside incident.
Array base palte comprises transparency carrier 30 ', signal wire (not shown), reflective metal layer 60 ', TFT and pixel electrode 38 '.Signal wire comprises: grid line and data line, or grid line, data line and public electrode wire.Signal wire and TFT are formed on the transparency carrier 30 ' in the non-open area 2 ', and pixel electrode 38 ' is arranged on the transparency carrier 30 ' in the open area 1 '.Also be formed with the transparent gate insulation layer and the passivation layer that cover whole transparency carrier 30 ' on the array base palte.Also be provided with the reflective metal layer 60 ' that is used for reflection ray on the array base palte in the reflection region 11 '.In the present embodiment, reflective metal layer 60 ' is provided with layer with data line, source electrode 35 ' and drain electrode 36 '.To form the element of figure (pattern) in the manufacturing process simultaneously among the present invention, be referred to as to be provided with layer mutually.Reflective metal layer 60 ' also can be provided with layer with gate electrode 31 ' and grid line.Reflective metal layer 60 ' can also be formed in the transparency carrier 30 '.
TFT is the on-off element of having chance with, and it comprises: gate electrode 31 ', gate insulation layer 32 ', semiconductor layer 33 ', doping semiconductor layer 34 ', source electrode 35 ', drain electrode 36 ' and passivation layer 37 '.Wherein, gate electrode 31 ' is connected with grid line, and source electrode 35 ' is connected with data line, and drain electrode 36 ' is connected by passivation layer via hole with pixel electrode 38 '.Identical in TFT structure of the present invention and the prior art, so repeat no more.
Color membrane substrates comprises transparency carrier 20 ' and color resin 22 ', can also comprise black matrix 21 '.Color resin 22 ' comprises the redgreenblue resin.The color resin 22 ' and the black matrix 21 ' of three kinds of colors alternately are formed on the transparency carrier 20 '.Black matrix 21 ' is formed on the transparency carrier 20 ' in the non-open area 2 ', and color resin 22 ' is formed in the open area on 1 ' the transparency carrier 20 '.
The transparency carrier 20 ' of color membrane substrates has different thickness in described light transmissive region 12 ' and described reflection region 11 '.In the present embodiment, in light transmission region 12 ', formed groove 100.
In the present embodiment, by in the light transmissive region of the transparency carrier of color membrane substrates, forming groove 100, the thickness that makes transparency carrier in light transmissive region greater than reflection region, changed the thickness of color membrane substrates in light transmissive region and reflection region, the thickness of the liquid crystal layer 40 ' that forms after making color membrane substrates and array base palte to box is (n+1) λ/2 in light transmissive region, be (2m+1) λ/4 in reflection region, wherein n and m are 0 or positive integer.So, emergent light that can the light reflex zone compensates, and makes that the phase differential of emergent light of light transmissive region and reflection region is 0, satisfies the demonstration needs of semi-transparent type crystal liquid display.
In addition, also can in the reflection region of the transparency carrier of color membrane substrates, form groove, the thickness that makes transparency carrier in light transmissive region less than reflection region.In light transmissive region, be (n+1) λ/2 as long as can satisfy the thickness of the liquid crystal layer that box color membrane substrates and array base palte are formed, in reflection region,, need not the formation zone of particular determination groove for (2m+1) λ/4 (n and m are 0 or positive integer) gets final product.
In the present embodiment, owing to formed groove on transparency carrier, therefore can reduce the thickness of liquid crystal panel compared to existing technology, it is identical with the thickness of groove that this reduces degree, is beneficial to the lightening development trend of LCD.
Fig. 3 is the sectional view of semi-transparent type crystal liquid display second embodiment of the present invention.As shown in Figure 3, present embodiment and the difference of first embodiment be groove that the position is set is different.The semi-transparent type crystal liquid display of present embodiment can be divided into a plurality of pixel regions by function, and each pixel region comprises open area 1 " and non-open area 2 ", open area 1 " can be divided into reflection region 11 again " and light transmissive region 12 ".
Color membrane substrates comprises transparency carrier 20 " and color resin 22 ", can also comprise black matrix 21 ".Color resin 22 " comprise the redgreenblue resin.The color resin 22 of three kinds of colors " and black matrix 21 " alternately be formed on transparency carrier 20 " on.Black matrix 21 " be formed on non-open area 2 " in transparency carrier 20 " on, color resin 22 " be formed in the open area 1 " transparency carrier 20 " on.
Array base palte comprises transparency carrier 30 ", signal wire (not shown), reflective metal layer 60 ", TFT and pixel electrode 38 ".Signal wire comprises: grid line and data line, or grid line, data line and public electrode wire.Signal wire and TFT are formed on non-open area 2 " in transparency carrier 30 " on, pixel electrode 38 " be arranged on open area 1 " in transparency carrier 30 " on.Also be formed with on the array base palte and cover whole transparency carrier 30 " transparent gate insulation layer and passivation layer.Reflection region 11 " in array base palte on also be provided with the reflective metal layer 60 that is used for reflection ray ".In the present embodiment, reflective metal layer 60 " with data line, source electrode 35 " and drain electrode 36 " be provided with layer.Reflective metal layer 60 " also can with gate electrode 31 " and grid line be provided with layer.Can also be with reflective metal layer 60 " be formed on transparency carrier 30 " in.
TFT is the on-off element of having chance with, and it comprises: gate electrode 31 ", gate insulation layer 32 ", semiconductor layer 33 ", doping semiconductor layer 34 ", source electrode 35 ", drain electrode 36 " and passivation layer 37 ".Wherein, gate electrode 31 " be connected source electrode 35 with grid line " be connected drain electrode 36 with data line " and with pixel electrode 38 " be connected by passivation layer via hole.Identical in TFT structure of the present invention and the prior art, so repeat no more.
The transparency carrier 30 of array base palte " on formed groove 100 '; make the transparency carrier 30 of array base palte " in described light transmissive region 12 " with described reflection region 11 " in have different thickness, satisfied the liquid crystal layer 40 that color membrane substrates and array base palte form after to box " thickness in light transmissive region, be (n+1) λ/2; be (2m+1) λ/4 in reflection region, wherein n and m are 0 or positive integer.
In the present embodiment at light transmission region 12 " in be provided with groove 100 ', make light transmission region 12 " in the thickness of liquid crystal layer greater than reflection region 11 ".
Certainly, also can be at reflection region 11 " in form groove 100 '; make light transmission region 12 " in the thickness of liquid crystal layer less than reflection region 11 ", in light transmissive region, be (n+1) λ/2 as long as satisfy the thickness of liquid crystal layer, be that (2m+1) λ/4 get final product in reflection region.Wherein n and m are 0 or positive integer.
What deserves to be mentioned is, also can be simultaneously the transparency carrier of array base palte and color membrane substrates be designed, make and satisfy above-mentioned requirements.Particularly, can groove all be set, satisfy the requirement of above-mentioned thickness of liquid crystal layer at array base palte and color membrane substrates.
Fig. 4 is the sectional view that is used for transparency carrier one embodiment of semi-transparent type crystal liquid display of the present invention.Transparency carrier of the present invention can be used for array base palte or color membrane substrates, has different thickness in reflection region or light transmission region, and thickness difference is (2n+1) λ/4, and wherein n is 0 or positive integer.In the present embodiment, on transparency carrier, formed the groove 100 of the degree of depth " for (2n+1) λ/4.
Below introduce in detail the manufacture method of the transparency carrier that is used for liquid crystal display of the present invention.
Fig. 5 is the process flow diagram of manufacture method that is used for the transparency carrier of liquid crystal display of the present invention.As shown in Figure 5, the manufacture method that is used for the transparency carrier of liquid crystal display of the present invention comprises the steps:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and wherein the zone of etching is corresponding to light transmissive region or reflection region.
Above-mentioned steps 2 is specially:
Step 23, carry out etching, remove the transparency carrier of exposure area, the degree of depth of etching is (2n+1) λ/4, and n is 0 or positive integer, and less than the thickness of transparency carrier;
Step 24, peel off the residue photoresist.
Semi-permeable liquid crystal display second embodiment of the present invention the manufacture method of array base palte be: after forming transparency carrier of the present invention, form elements such as signal wire, reflective metal layer, TFT and pixel electrode and get final product.
Make first embodiment of manufacture method of the array base palte of semi-permeable liquid crystal display second embodiment of the present invention, specific as follows:
Make second embodiment of manufacture method of the array base palte of semi-permeable liquid crystal display second embodiment of the present invention, specific as follows:
Step 41, form transparency carrier of the present invention;
Step 42, utilize magnetron sputtering or thermal evaporation method, preparation one deck grid metallic film on transparency carrier, the material of grid metallic film uses metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, form gate electrode and grid line figure by composition technology in the open area of substrate with first mask plate (gate mask plate), and form the reflective metals layer pattern in the reflection region in the open area, can also form the public electrode line graph simultaneously in this process.
Step 43, utilize process for chemical vapor deposition of materials with via, successive sedimentation grid insulating film, semiconductive thin film and doped semiconductor films on the whole transparency carrier of completing steps 42, the gate insulation layer membraneous material is the oxide etc. of silicon nitride, monox, silicon oxynitride or aluminium normally, forms active layer pattern with second mask plate (active layer mask plate) by composition technology on the gate electrode of open area.
Step 44, utilize magnetron sputtering or thermal evaporation method, metallic film is leaked in deposition one deck source on the whole transparency carrier of completing steps 43, the material that metallic film is leaked in the source uses metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, form source electrode, drain electrode and data line figure by composition technology in non-open area with the 3rd mask plate (source-drain electrode mask plate), and between source electrode and drain electrode, form TFT raceway groove figure.
Step 45, utilize process for chemical vapor deposition of materials with via, deposition one deck passivation layer film on the whole transparency carrier of completing steps 443, the material of passivation layer film is silicon nitride normally, forms passivation layer via hole with the 4th mask plate (passivation layer mask plate) in the drain electrode position by composition technology.
Step 46, utilize magnetron sputtering or thermal evaporation method, deposition one deck pixel electrode layer film on the whole transparency carrier of completing steps 45, the material of pixel electrode layer film is generally tin indium oxide etc., form pixel electrode by composition technology in the open area with the 5th mask plate (pixel electrode mask plate), and pixel electrode is connected with drain electrode by passivation layer via hole.
What deserves to be mentioned is, when specifically implementing, can adopt and two transfer mask plates to reduce the use number of mask plate and reduce cost.Be specially: second mask plate in above-mentioned steps 33 and the step 43 and the 3rd mask plate in step 34 and the step 44 can be replaced with two mask plates of transferring.The 4th mask plate in step 35 and the step 45 and the 5th mask plate in step 36 and the step 46 can also be replaced with two mask plates of transferring, and form pixel electrode with peeling off (lift off) technology.
In sum, the manufacturing method of array base plate of semi-transparent type crystal liquid display of the present invention, formed reflective metal layer by redesign source-drain electrode mask or gate electrode mask plate, need compared to existing technology to compare with two mask plates formation resin beds and reflective metal layer, reduced the usage quantity of mask plate, and it is consuming time to have reduced technology, provides cost savings.
Composition technology of the present invention comprises the technologies such as coating, development, exposure and ashing of the photoresist that microelectronic is commonly used also comprising the process that etching technics or the like is commonly used.
The manufacture method of the color membrane substrates of semi-transparent type crystal liquid display first embodiment of the present invention can continue to form color resin, and can also form black matrix after form transparency carrier of the present invention.The method that forms color resin and black matrix is same as the prior art, so repeat no more.
It should be noted that at last: above embodiment is only in order to technical scheme of the present invention to be described but not limit it, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that: it still can make amendment or be equal to replacement technical scheme of the present invention, and these modifications or be equal to replacement and also can not make amended technical scheme break away from the spirit and scope of technical solution of the present invention.
Claims (11)
1. semi-transparent type crystal liquid display, it comprises array base palte, color membrane substrates and liquid crystal layer, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, each pixel region comprises light transmissive region and reflection region, it is characterized in that: described array base palte has different thickness in described light transmissive region and described reflection region, described color membrane substrates has different thickness or described color membrane substrates and array base palte and have different thickness respectively in described light transmissive region and described reflection region in described light transmissive region and described reflection region, make the thickness of liquid crystal layer in light transmissive region and reflection region satisfy formula one and formula two;
Formula one: d
T=(n+1) λ/2, d
TBe the thickness of liquid crystal layer in described light transmissive region, n is 0 or positive integer;
Formula two: d
F=(2m+1) λ/4, d
FBe the thickness of liquid crystal layer in described reflection region, m is 0 or positive integer.
2. according to the semi-transparent type crystal liquid display of claim 1, it is characterized in that: the transparency carrier of described array base palte has different thickness in described light transmissive region and described reflection region.
3. according to the semi-transparent type crystal liquid display of claim 1, it is characterized in that: the transparency carrier of described color membrane substrates has different thickness in described light transmissive region and described reflection region.
4. according to the semi-transparent type crystal liquid display of claim 1, it is characterized in that: the transparency carrier of described color membrane substrates and the transparency carrier of array base palte have different thickness respectively in described light transmissive region and described reflection region.
5. according to the described semi-transparent type crystal liquid display of arbitrary claim among the claim 2-4, it is characterized in that: the thickness of described transparency carrier in described light transmissive region is greater than the thickness in the described reflection region.
6. according to the described semi-transparent type crystal liquid display of arbitrary claim among the claim 2-4, it is characterized in that: the thickness of described transparency carrier in described light transmissive region is less than the thickness in the described reflection region.
7. transparency carrier that is used for semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, each pixel region comprises light transmissive region and reflection region, it is characterized in that: described transparency carrier has different thickness in described light transmissive region and described reflection region, the difference of thickness is (2n+1) λ/4, and n is 0 or positive integer.
8. manufacture method that is used for the transparency carrier of semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, and each pixel region comprises light transmissive region and reflection region, it is characterized in that, comprising:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and wherein the zone of etching is corresponding to described light transmissive region or described reflection region.
9. the manufacture method that is used for the transparency carrier of semi-transparent type crystal liquid display according to claim 8 is characterized in that: the degree of depth of etching is (2n+1) λ/4 in the described step 2, and n is 0 or positive integer.
10. manufacture method that is used for the color membrane substrates of semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, and each pixel region comprises light transmissive region and reflection region, it is characterized in that, comprising:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and forming the degree of depth is the groove of (2n+1) λ/4, and wherein n is 0 or positive integer, and wherein said groove is corresponding to described light transmissive region or described reflection region;
Step 3: on described surface, form color resin.
11. a manufacture method that is used for the array base palte of semi-transparent type crystal liquid display, this semi-transparent type crystal liquid display is divided into a plurality of pixel regions, and each pixel region comprises light transmissive region and reflection region, it is characterized in that, comprising:
Step 1: the transparency carrier with smooth surface is provided;
Step 2: etching is carried out on the described surface of the part of described transparency carrier, and forming the degree of depth is the groove of (2n+1) λ/4, and wherein n is 0 or positive integer, and wherein said groove is corresponding to described light transmissive region or described reflection region;
Step 3: on described surface, form signal wire, reflective metal layer, TFT and pixel electrode figure.
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| CN103217826A (en) * | 2013-04-25 | 2013-07-24 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN103560114A (en) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | TFT array substrate, manufacturing method thereof and display device |
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| JP2003090997A (en) * | 2001-07-13 | 2003-03-28 | Seiko Epson Corp | Color filter substrate and electrooptical device, method for manufacturing color filter substrate and method for manufacturing electrooptical device and electronic appliance |
| EP1279994A3 (en) * | 2001-07-27 | 2003-10-01 | Alps Electric Co., Ltd. | Semitransparent reflective liquid-crystal display device |
| JP4068942B2 (en) * | 2001-12-17 | 2008-03-26 | セイコーエプソン株式会社 | ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
| CN100430796C (en) * | 2006-01-18 | 2008-11-05 | 财团法人工业技术研究院 | Half reflection and half transmission liquid crystal display device, and manufacturing method |
| CN101021630B (en) * | 2006-02-15 | 2011-06-08 | 奇美电子股份有限公司 | Display panel and liquid crystal display device |
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| CN103217826A (en) * | 2013-04-25 | 2013-07-24 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| WO2014173004A1 (en) * | 2013-04-25 | 2014-10-30 | 深圳市华星光电技术有限公司 | Liquid crystal panel |
| US9069203B2 (en) | 2013-04-25 | 2015-06-30 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Liquid crystal panel |
| CN103217826B (en) * | 2013-04-25 | 2016-02-03 | 深圳市华星光电技术有限公司 | Liquid crystal panel |
| CN104635370A (en) * | 2013-11-08 | 2015-05-20 | 联想(北京)有限公司 | Color filter film and color display comprising same |
| CN103560114A (en) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | TFT array substrate, manufacturing method thereof and display device |
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