CN101831617B - Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device - Google Patents
Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device Download PDFInfo
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- CN101831617B CN101831617B CN201010185604XA CN201010185604A CN101831617B CN 101831617 B CN101831617 B CN 101831617B CN 201010185604X A CN201010185604X A CN 201010185604XA CN 201010185604 A CN201010185604 A CN 201010185604A CN 101831617 B CN101831617 B CN 101831617B
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Abstract
The invention discloses a basal plate retainer for an ECR (Equivalent Continuous Rating) plasma sputtering device, comprising an original basal plate (3), a fixed shaft (4) connected with the original basal plate (3), a supporting plate (5) and a fixed flange (2) for connecting a vacuum chamber which are sequentially and axially arranged on the fixed shaft (4), wherein a driving shaft (6) parallel to the fixed shaft (4) passes through the supporting plate (5) and the fixed flange (2), and the outer end part of the driving shaft (6) is provided with a rotating handle(7). The basal plate retainer is characterized in that the original basal plate (3) is provided with an expanded basal plate (8), a driven shaft (9) passes vertically through the expanded basal plate (8), the driven shaft (9) and the driving shaft (6) are respectively provided with a gear, and the gears are meshed mutually, the inner end parts of the driven shaft (9) and the driving shaft (6) are respectively fixed with an upper baffle plate (12) and a lower baffle plate (13); and the driven shaft (9) passes through the position of the expanded basal plate (8) and is near to the periphery of the expanded basal plate (8).
Description
Technical field
The present invention relates to electron cyclotron resonace (ECR) plasma sputtering apparatus, relate in particular to a kind of ecr plasma sputter equipment that can increase the sputter substrate area and use substrate holder.
Background technology
ECR plasma sputtering processing technology because the excellent properties of aspect such as it is compound at micro nano structure, material surface processing and modification, element mix is widely used in the various thin-film techniques, has caused a lot of scholars' concern and research.ECR plasma sputtering processing technology originates from the electron cyclotron resonace technology in the controlled fusion research; When the electron cyclotron motion frequency equates with the microwave frequency of propagating along magnetic field; Resonate, under the action of a magnetic field, the electron cyclotron moving radius increases gradually; Energy constantly increases, and final and gas molecule collision ionization forms plasma body; After applying bias voltage on the target, the plasma bombardment sputtering target material is done the electronic impact generation ionization of cyclotron motion in target atom that sputter produces and the plasma jet, obtain ion; Ion towards the motion of substrate direction, finally is deposited on sample surfaces and forms film under the substrate bias effect.
At present, prepare the film field, hope that generally plasma body evenly is full of in the whole vacuum chamber, deposits the film of maximum area on substrate holder in the ecr plasma sputter; But; Existing ecr plasma sputter equipment with substrate holder in, the place ahead of substrate holder is provided with the baffle plate of a single shaft control, baffle plate has taken the sectional area of vacuum chamber; Thereby have influence on the area of deposit film, cause that the size of sample is restricted on the substrate holder.
Summary of the invention
The object of the present invention is to provide a kind of ecr plasma sputter equipment to use substrate holder, can under the situation that does not change the vacuum chamber sectional area, increase the sputter substrate area, and then increase depositional area effectively.
In order to achieve the above object, the present invention adopts following technical scheme to be achieved.
A kind of ecr plasma sputter equipment is used substrate holder; Comprise original substrate; The stationary shaft that is connected with original substrate; Be axially disposed within back up pad and mounting flange on the stationary shaft successively, be penetrated with the transmission shaft that is parallel to stationary shaft on back up pad and the mounting flange, the outer end of transmission shaft is provided with turning handle;
It is characterized in that,
Original substrate is provided with an expanded basal, is penetrated with a driven shaft perpendicular to expanded basal, and driven shaft and transmission shaft are respectively arranged with pitch wheel, and the inner end of driven shaft and transmission shaft is fixed with upper and lower baffle plate respectively; Said driven shaft runs through the position of expanded basal, near the expanded basal periphery.
Further improvement of the present invention and characteristics are:
Be provided with insulation covering between said driven shaft and the expanded basal.
Said expanded basal is provided with sample clamp; Said sample clamp is for connecting the pressure ring of expanded basal through set screw; Or said sample clamp is for connecting the sample disc of expanded basal through set screw, and the side of sample disc is along being provided with lock screw.
Ecr plasma sputter equipment of the present invention with substrate holder compared with prior art; It is following to have beneficial effect: through expanded basal is fixed on the original substrate; Be provided with upper and lower two baffle plates in the front of expanded basal, can increase the area of deposit film effectively; Upper and lower baffle plate can carry out transmission through transmission shaft, driven shaft and a pair of gear pair; In cavity space, open to accurate and flexible and close; Can accurately control the exposure of expanded basal and block the time; The sample that is installed on the expanded basal is carried out etching, deposition and protection to be implemented in the different periods.The type that sample clamp can change sample is installed on expanded basal, makes it be not limited to thin slice type sample, can also be used for thin block type (like race ring) sample.The present invention improves on the basis of original ecr plasma sputter equipment with substrate holder, and its improvement is simple in structure, reliable, cost is low, can realize the increase of depositional area substantially.
Description of drawings
Below in conjunction with description of drawings and embodiment the present invention is explained further details.
Fig. 1 is the vacuum chamber structural representation of ecr plasma sputter equipment with substrate holder;
Fig. 2 is the structural representation of the substrate holder among the present invention;
Fig. 3 is the explosive view of Fig. 2;
Among the figure: 1, vacuum chamber; 101 retainer flanges; 102 molecular pump flanges; 103 right chambers; 104 target framves; 105 left chamber; 2, mounting flange; 3, original substrate; 4, stationary shaft; 5, back up pad; 6, transmission shaft; 7, turning handle; 8, expanded basal; 9, driven shaft; 10, insulation covering; 11, gear; 12, overhead gage; 13, lower baffle plate; 14, sample clamp; 1401 pressure rings; 1402 sample disc.
Embodiment
With reference to Fig. 1; Vacuum chamber for the ecr plasma sputter equipment; Vacuum chamber 1 comprises: left chamber 105 and right chamber 103; Be provided with target frame 104 in the middle of left chamber 105 and the right chamber 103, right chamber 103 axial direction dues are provided with retainer flange 101, and radial direction is provided with molecular pump flange 102.
In conjunction with Fig. 2, Fig. 3, substrate holder extend into the inside of vacuum chamber 1, links to each other through the retainer flange 101 that is provided with on mounting flange 2 and the right chamber 103.Substrate holder of the present invention comprises original substrate 3; The stationary shaft 4 that is connected with original substrate 3; Mounting flange 2 and back up pad 5 are set on stationary shaft 4 vertically, are penetrated with the transmission shaft 6 that is parallel to stationary shaft 4 on back up pad 5 and the mounting flange 2, the outer end of transmission shaft 6 is provided with turning handle 7.Pass through fixedly expanded basal 8 of sunk screw on the original substrate 3, run through driven shaft 9 perpendicular to expanded basal 8.Driven shaft 9 runs through the position of expanded basal 8, near expanded basal 8 peripheries.Present embodiment adopts flexible method; Neighboring in expanded basal 8 is provided with lug; Be provided for running through the dead eye of driven shaft 9 on the lug, play the effect of supporting driven shaft 9 equally, be provided with insulation covering 10 in the dead eye; Isolated driven shaft 9 is electrically connected with expanded basal 8, is short-circuited when avoiding on expanded basal 8, applying bias voltage.
Be separately installed with pitch wheel 11 on the right-hand member of driven shaft 9 and the transmission shaft 6, realize the drive connection of transmission shaft 6 ends and driven shaft 9 through this a pair of gear pair.The inner end (being the left part) of driven shaft 9 and transmission shaft 6 is fixed with upper and lower baffle plate 12,13 respectively; Upper and lower baffle plate 12,13 is semi-circular plate; Operate through turning handle 7; Can drive transmission shaft 6, transmission shaft 6 drives driven shaft 9 through gear pair simultaneously, realizes the switching of upper and lower baffle plate 12,13.The present invention replaces a baffle plate on the existing substrate holder through upper and lower baffle plate 12,13, has realized the expansion of effective depositional area, has expanded the making ability of existing ecr plasma sputter equipment with substrate holder.
Expanded basal 8 is provided with sample clamp.Sample clamp 14 is for connecting the pressure ring 1401 of expanded basal 8 through set screw; Or for connect the sample disc 1402 of expanded basal 8 through set screw, the side of sample disc 1402 is along being provided with lock screw.
During use, substrate is put into substrate frame through behind the cleaning-drying, and regulate the axial distance of target and substrate.Vacuum tightness is extracted into 4 * 10 in vacuum chamber 1
-4Behind the Pa, feed Ar gas and make vacuum tightness be reduced to 2 * 10
-2Pa.Opening the magnetic coil electric current is 420 A, connects microwave source, in vacuum chamber, produces plasma body this moment.Adjusting makes the microwave coupling reach optimum regime and stablize 20 min; Utilize the structure among the present invention then; Rotation turning handle 7; Transmission shaft 6 rotates thereupon, and rotates through gear driven driven shaft fixed thereon 9, makes the overhead gage 12 that is connected transmission shaft 6 and driven shaft 9 left ends and lower baffle plate 13 open to both sides; Expanded basal 8 is exposed in the plasma chamber, carries out sputter clean with Ar pair ion substrate surface.Behind the substrate sputter clean 3min, reverse rotation turning handle 7, overhead gage 12 and lower baffle plate 13 are to closed center; Apply the target bias voltage, rotate turning handle 7 once more after stablizing 3 min, open upper and lower baffle plate 12,13; Begin deposition, the control depositing time is realized the preparation of sample thin film.So circulation is opened and is closed upper and lower baffle plate 12,13, can satisfy the different periods sample surfaces etching is cleaned, the requirement of thin film deposition and protection sample surfaces.
Claims (3)
1. an ecr plasma sputter equipment is used substrate holder; Comprise original substrate (3); The stationary shaft (4) that is connected with original substrate (3); Be axially disposed within back up pad (5) and mounting flange (2) on the stationary shaft (4) successively, be penetrated with the transmission shaft (6) that is parallel to stationary shaft (4) on back up pad (5) and the mounting flange (2), the outer end of transmission shaft (6) is provided with turning handle (7); It is characterized in that; Original substrate (3) is provided with an expanded basal (8); Be penetrated with a driven shaft (9) perpendicular to expanded basal (8); Driven shaft (9) and transmission shaft (6) are respectively arranged with pitch wheel (11), and the inner end of driven shaft (9) and transmission shaft (6) is fixed with upper and lower baffle plate (12,13) respectively; Said driven shaft (9) runs through the position of expanded basal (8), near expanded basal (8) periphery; Be provided with insulation covering (10) between said driven shaft (9) and the expanded basal (8); Said expanded basal (8) is provided with sample clamp (14).
2. ecr plasma sputter equipment according to claim 1 is used substrate holder, it is characterized in that, said sample clamp (14) is for connecting the pressure ring (1401) of expanded basal (8) through set screw.
3. ecr plasma sputter equipment according to claim 1 is used substrate holder, it is characterized in that, said sample clamp (14) is for connecting the sample disc (1402) of expanded basal (8) through set screw, and the side of sample disc (1402) is along being provided with lock screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010185604XA CN101831617B (en) | 2010-05-28 | 2010-05-28 | Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010185604XA CN101831617B (en) | 2010-05-28 | 2010-05-28 | Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101831617A CN101831617A (en) | 2010-09-15 |
| CN101831617B true CN101831617B (en) | 2012-09-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010185604XA Expired - Fee Related CN101831617B (en) | 2010-05-28 | 2010-05-28 | Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2923741Y (en) * | 2006-04-25 | 2007-07-18 | 天津大学 | Multi-work-position rotary sample table |
| CN101509124A (en) * | 2009-03-13 | 2009-08-19 | 西安交通大学 | Cavity structure of ECR plasma sputtering apparatus |
| CN201738000U (en) * | 2010-05-28 | 2011-02-09 | 西安交通大学 | Baseplate retainer used for ECR(electronic convolution resonance) plasma sputtering device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018515B2 (en) * | 2004-03-24 | 2006-03-28 | Applied Materials, Inc. | Selectable dual position magnetron |
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2010
- 2010-05-28 CN CN201010185604XA patent/CN101831617B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2923741Y (en) * | 2006-04-25 | 2007-07-18 | 天津大学 | Multi-work-position rotary sample table |
| CN101509124A (en) * | 2009-03-13 | 2009-08-19 | 西安交通大学 | Cavity structure of ECR plasma sputtering apparatus |
| CN201738000U (en) * | 2010-05-28 | 2011-02-09 | 西安交通大学 | Baseplate retainer used for ECR(electronic convolution resonance) plasma sputtering device |
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| Publication number | Publication date |
|---|---|
| CN101831617A (en) | 2010-09-15 |
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