CN101831617A - Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device - Google Patents
Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device Download PDFInfo
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- CN101831617A CN101831617A CN 201010185604 CN201010185604A CN101831617A CN 101831617 A CN101831617 A CN 101831617A CN 201010185604 CN201010185604 CN 201010185604 CN 201010185604 A CN201010185604 A CN 201010185604A CN 101831617 A CN101831617 A CN 101831617A
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- substrate
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- driven shaft
- basal plate
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Abstract
The invention discloses a basal plate retainer for an ECR (Equivalent Continuous Rating) plasma sputtering device, comprising an original basal plate (3), a fixed shaft (4) connected with the original basal plate (3), a supporting plate (5) and a fixed flange (2) for connecting a vacuum chamber which are sequentially and axially arranged on the fixed shaft (4), wherein a driving shaft (6) parallel to the fixed shaft (4) passes through the supporting plate (5) and the fixed flange (2), and the outer end part of the driving shaft (6) is provided with a rotating handle(7). The basal plate retainer is characterized in that the original basal plate (3) is provided with an expanded basal plate (8), a driven shaft (9) passes vertically through the expanded basal plate (8), the driven shaft (9) and the driving shaft (6) are respectively provided with a gear, and the gears are meshed mutually, the inner end parts of the driven shaft (9) and the driving shaft (6) are respectively fixed with an upper baffle plate (12) and a lower baffle plate (13); and the driven shaft (9) passes through the position of the expanded basal plate (8) and is near to the periphery of the expanded basal plate (8).
Description
Technical field
The present invention relates to electron cyclotron resonace (ECR) plasma sputtering apparatus, relate in particular to a kind of ecr plasma sputter equipment substrate holder that can increase the sputter substrate area.
Background technology
Ecr plasma sputter processing technology because the excellent properties of aspect such as it is compound at micro nano structure, material surface processing and modification, element mix is widely used in the various thin-film techniques, has caused a lot of scholars' concern and research.Ecr plasma sputter processing technology originates from the electron cyclotron resonace technology in the controlled fusion research, when the electron cyclotron motion frequency equates with the microwave frequency of propagating along magnetic field, resonate, under the action of a magnetic field, the electron cyclotron moving radius increases gradually, energy constantly increases, and final and gas molecule collision ionization forms plasma body; After applying bias voltage on the target, the plasma bombardment sputtering target material is done the electronic impact generation ionization of cyclotron motion in target atom that sputter produces and the plasma jet, obtain ion; Ion towards the motion of substrate direction, finally is deposited on sample surfaces and forms film under the substrate bias effect.
At present, prepare the film field, wish that generally plasma body evenly is full of in the whole vacuum chamber, deposits the film of maximum area on substrate holder in the ecr plasma sputter; But, with in the substrate holder, the place ahead of substrate holder is provided with the baffle plate of a single shaft control at existing ecr plasma sputter equipment, and baffle plate has taken the sectional area of vacuum chamber, thereby have influence on the area of deposit film, cause that the size of sample is restricted on the substrate holder.
Summary of the invention
The object of the present invention is to provide a kind of ecr plasma sputter equipment substrate holder, can under the situation that does not change the vacuum chamber sectional area, increase the sputter substrate area, and then increase depositional area effectively.
In order to achieve the above object, the present invention is achieved by the following technical solutions.
A kind of ecr plasma sputter equipment substrate holder, comprise original substrate, the stationary shaft that is connected with original substrate, be axially disposed within back up pad and mounting flange on the stationary shaft successively, be penetrated with the transmission shaft that is parallel to stationary shaft on back up pad and the mounting flange, the outer end of transmission shaft is provided with turning handle;
It is characterized in that,
Original substrate is provided with one and enlarges substrate, is penetrated with a driven shaft perpendicular to enlarging substrate, and driven shaft and transmission shaft are respectively arranged with pitch wheel, and the inner end of driven shaft and transmission shaft is fixed with upper and lower baffle plate respectively; Described driven shaft runs through the position that enlarges substrate, near enlarging the substrate periphery.
Further improvement of the present invention and characteristics are:
Be provided with insulation covering between described driven shaft and the expansion substrate.
Described expansion substrate is provided with sample clamp; Described sample clamp is to connect the pressure ring that enlarges substrate by set screw; Or described sample clamp is that the side of sample disc is along being provided with lock screw by the sample disc of set screw connection expansion substrate.
Ecr plasma sputter equipment of the present invention with substrate holder compared with prior art, it is as follows to have beneficial effect: be fixed on the original substrate by enlarging substrate, be provided with upper and lower two baffle plates in the front that enlarges substrate, can increase the area of deposit film effectively; Upper and lower baffle plate can carry out transmission by transmission shaft, driven shaft and a pair of gear pair; in cavity space, open to accurate and flexible and close; can accurately control the exposure that enlarges substrate and block the time; carry out etching to being installed on the sample that enlarges on the substrate, deposition and protection to be implemented in the different periods.On the expansion substrate, the type that sample clamp can change sample is installed, makes it be not limited to thin slice type sample, can also be used for thin block type (as race ring) sample.The present invention improves on the basis of original ecr plasma sputter equipment with substrate holder, and its improvement is simple in structure, reliable, cost is low, can realize the increase of depositional area substantially.
Description of drawings
Below in conjunction with description of drawings and embodiment the present invention is described in further details.
Fig. 1 is the vacuum chamber structural representation of ecr plasma sputter equipment with substrate holder;
Fig. 2 is the structural representation of the substrate holder among the present invention;
Fig. 3 is the explosive view of Fig. 2;
Among the figure: 1, vacuum chamber; 101 retainer flanges; 102 molecular pump flanges; 103 right chambers; 104 target framves; 105 left chamber; 2, mounting flange; 3, original substrate; 4, stationary shaft; 5, back up pad; 6, transmission shaft; 7, turning handle; 8, enlarge substrate; 9, driven shaft; 10, insulation covering; 11, gear; 12, overhead gage; 13, lower baffle plate; 14, sample clamp; 1401 pressure rings; 1402 sample disc.
Embodiment
With reference to Fig. 1, vacuum chamber for the ecr plasma sputter equipment, vacuum chamber 1 comprises: left chamber 105 and right chamber 103, be provided with target frame 104 in the middle of left chamber 105 and the right chamber 103, right chamber 103 axial direction dues are provided with retainer flange 101, and radial direction is provided with molecular pump flange 102.
In conjunction with Fig. 2, Fig. 3, substrate holder extend into the inside of vacuum chamber 1, links to each other by the retainer flange 101 that is provided with on mounting flange 2 and the right chamber 103.Substrate holder of the present invention comprises original substrate 3, the stationary shaft 4 that is connected with original substrate 3, mounting flange 2 and back up pad 5 are set on stationary shaft 4 vertically, are penetrated with the transmission shaft 6 that is parallel to stationary shaft 4 on back up pad 5 and the mounting flange 2, the outer end of transmission shaft 6 is provided with turning handle 7.By the fixing substrate 8 that enlarges of sunk screw, run through driven shaft 9 on the original substrate 3 perpendicular to enlarging substrate 8.Driven shaft 9 runs through the position that enlarges substrate 8, near enlarging substrate 8 peripheries.Present embodiment adopts flexible method, in the neighboring that enlarges substrate 8 lug is set, be provided for running through the dead eye of driven shaft 9 on the lug, play the effect of supporting driven shaft 9 equally, be provided with insulation covering 10 in the dead eye, isolated driven shaft 9 is electrically connected with expansion substrate 8, is short-circuited when avoiding applying bias voltage on enlarging substrate 8.
Be separately installed with pitch wheel 11 on the right-hand member of driven shaft 9 and the transmission shaft 6, realize the drive connection of transmission shaft 6 ends and driven shaft 9 by this a pair of gear pair.The inner end of driven shaft 9 and transmission shaft 6 (being the left part) is fixed with upper and lower baffle plate 12,13 respectively, upper and lower baffle plate 12,13 is semi-circular plate, operate by turning handle 7, can drive transmission shaft 6, transmission shaft 6 drives driven shaft 9 by gear pair simultaneously, realizes the switching of upper and lower baffle plate 12,13.The present invention has realized the expansion of effective depositional area by a baffle plate on the existing substrate holder of upper and lower baffle plate 12,13 replacements, has expanded the making ability of existing ecr plasma sputter equipment with substrate holder.
During use, substrate is put into substrate frame through behind the cleaning-drying, and regulate the axial distance of target and substrate.Vacuum tightness is extracted into 4 * 10 in vacuum chamber 1
-4Behind the Pa, feed Ar gas and make vacuum tightness be reduced to 2 * 10
-2Pa.Opening the magnetic coil electric current is 420A, connects microwave source, produces plasma body this moment in vacuum chamber.Adjusting makes the microwave coupling reach optimum regime and stablize 20min; Utilize the structure among the present invention then, rotation turning handle 7, transmission shaft 6 rotates thereupon, and by gear driven driven shaft fixed thereon 9 rotations, make the overhead gage 12 be connected transmission shaft 6 and driven shaft 9 left ends and lower baffle plate 13 open to both sides, to enlarge substrate 8 and be exposed in the plasma chamber, carry out sputter clean with Ar ion pair substrate surface.Behind the substrate sputter clean 3min, reverse rotation turning handle 7, overhead gage 12 and lower baffle plate 13 are to closed center, apply the target bias voltage, rotate turning handle 7 once more after stablizing 3min, open upper and lower baffle plate 12,13, begin deposition, the control depositing time is realized the preparation of sample thin film.So circulation is opened and is closed upper and lower baffle plate 12,13, can satisfy the different periods sample surfaces etching is cleaned, the requirement of thin film deposition and protection sample surfaces.
Claims (5)
1. an ecr plasma sputter equipment is with the substrate holder substrate holder, comprise original substrate (3), the stationary shaft (4) that is connected with original substrate (3), be axially disposed within back up pad (5) and mounting flange (2) on the stationary shaft (4) successively, be penetrated with the transmission shaft (6) that is parallel to stationary shaft (4) on back up pad (5) and the mounting flange (2), the outer end of transmission shaft (6) is provided with turning handle (7); It is characterized in that, original substrate (3) is provided with one and enlarges substrate (8), be penetrated with a driven shaft (9) perpendicular to enlarging substrate (8), driven shaft (9) and transmission shaft (6) are respectively arranged with pitch wheel (11), and the inner end of driven shaft (9) and transmission shaft (6) is fixed with upper and lower baffle plate (12,13) respectively; Described driven shaft (9) runs through the position that enlarges substrate (8), near enlarging substrate (8) periphery.
2. ecr plasma sputter equipment substrate holder according to claim 1 is characterized in that, is provided with insulation covering (10) between described driven shaft (9) and the expansion substrate (8).
3. ecr plasma sputter equipment substrate holder according to claim 1 is characterized in that described expansion substrate (8) is provided with sample clamp (14).
4. ecr plasma sputter equipment substrate holder according to claim 3 is characterized in that, described sample clamp (14) is to connect the pressure ring (1401) that enlarges substrate (8) by set screw.
5. ecr plasma sputter equipment substrate holder according to claim 3, it is characterized in that, described sample clamp (14) is to connect the sample disc (1402) that enlarges substrate (8) by set screw, and the side of sample disc (1402) is along being provided with lock screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010185604XA CN101831617B (en) | 2010-05-28 | 2010-05-28 | Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010185604XA CN101831617B (en) | 2010-05-28 | 2010-05-28 | Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101831617A true CN101831617A (en) | 2010-09-15 |
| CN101831617B CN101831617B (en) | 2012-09-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010185604XA Expired - Fee Related CN101831617B (en) | 2010-05-28 | 2010-05-28 | Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050211548A1 (en) * | 2004-03-24 | 2005-09-29 | Tza-Jing Gung | Selectable dual position magnetron |
| CN2923741Y (en) * | 2006-04-25 | 2007-07-18 | 天津大学 | Multi-work-position rotary sample table |
| CN101509124A (en) * | 2009-03-13 | 2009-08-19 | 西安交通大学 | Cavity structure of ECR plasma sputtering apparatus |
| CN201738000U (en) * | 2010-05-28 | 2011-02-09 | 西安交通大学 | Baseplate retainer used for ECR(electronic convolution resonance) plasma sputtering device |
-
2010
- 2010-05-28 CN CN201010185604XA patent/CN101831617B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050211548A1 (en) * | 2004-03-24 | 2005-09-29 | Tza-Jing Gung | Selectable dual position magnetron |
| CN2923741Y (en) * | 2006-04-25 | 2007-07-18 | 天津大学 | Multi-work-position rotary sample table |
| CN101509124A (en) * | 2009-03-13 | 2009-08-19 | 西安交通大学 | Cavity structure of ECR plasma sputtering apparatus |
| CN201738000U (en) * | 2010-05-28 | 2011-02-09 | 西安交通大学 | Baseplate retainer used for ECR(electronic convolution resonance) plasma sputtering device |
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| Publication number | Publication date |
|---|---|
| CN101831617B (en) | 2012-09-05 |
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Granted publication date: 20120905 |