CN101823880A - Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof - Google Patents

Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof Download PDF

Info

Publication number
CN101823880A
CN101823880A CN 201010192027 CN201010192027A CN101823880A CN 101823880 A CN101823880 A CN 101823880A CN 201010192027 CN201010192027 CN 201010192027 CN 201010192027 A CN201010192027 A CN 201010192027A CN 101823880 A CN101823880 A CN 101823880A
Authority
CN
China
Prior art keywords
ceramic materials
tungsten
phenacite
microwave dielectric
ultralow temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 201010192027
Other languages
Chinese (zh)
Other versions
CN101823880B (en
Inventor
周迪
汪宏
姚熹
庞利霞
吴新光
郭靖
张高群
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Original Assignee
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN2010101920277A priority Critical patent/CN101823880B/en
Publication of CN101823880A publication Critical patent/CN101823880A/en
Application granted granted Critical
Publication of CN101823880B publication Critical patent/CN101823880B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and a preparation method thereof. Based on a structural formula of A2BO4, a low-valent Li+1 ion is selected to occupy the position A, and high-valent Mo6+ and W6+ compound cations are selected to occupy the position B; and a series of ceramic materials, which can be sintered in the ultralow temperature range of between 540 and 640 DEG C and have low microwave dielectric constant (epsilon r is more than or equal to 5.3 and less than or equal to 5.5), adjustable resonant frequency temperature coefficient (TCF is more than or equal to 133ppm per DEG C below zero and less than or equal to 149 ppm per DEG C below zero and low microwave dielectric loss (high quality factor Qf value, wherein Qf is more than or equal to 37,000GHz and less than or equal to 63,400 GHz), are obtained by the traditional solid-phase reaction sintering method. The structural expression of the ceramic materials is Li2(Mo1-xWx)O4, wherein x is more than 0.0 and less than 1.0.

Description

A kind of Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof
Technical field
The invention belongs to electronic ceramics and preparation field thereof, particularly a kind of Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials of agglomerating and preparation thereof under very low temperature.
Background technology
Microwave-medium ceramics is a kind of new function stupalith that grows up nearly decades, it is the critical material of making microwave-medium wave filter resonator, rapid to the very active development of its research in recent years, its impellent mainly comes from the demand of commercial radio communication high speed development, as cellular mobile telecommunication system, TV receiving system, direct loudspeaker system and satellite communication system etc.Microwave-medium ceramics has premium propertiess such as specific inductivity wider distribution, low microwave loss, frequency-temperature coefficient be little, be fit to make resonator oscillator wave filter and frequency discriminator in the equipment such as various microwave devices and mobile telephone, can satisfy microwave circuit miniaturization, integrated, high reliability and requirement cheaply.Along with the development of mobile communication cause, the research of microwave-medium ceramics is subject to people's attention day by day.
LTCC LTCC(LowTemperatureCo-firedCeramics) technology has become one of major technique of electronic-component moduleization with its excellent electricity, machinery, calorifics and operational characteristic.What as its name suggests, the LTCC technology referred to is exactly with ceramic green agglomerating technology together with electrode.According to the difference of material, the specific inductivity of LTCC material can in very large range change, and has increased the handiness of circuit layout.Applied microwave-medium ceramics has lower dielectric loss than resin material used in the PCB printed circuit board (PCB) in the LTCC technology, has very good high frequency characteristics.So after the metal electrode with high conductivity burnt altogether, integral module also can keep very low loss.In addition, compare with organism such as resin materials, stupalith has lower thermal expansivity, has further improved the reliability of components and parts wrapping processs.Rely on above-described various advantages, the LTCC technology becomes the prefered method of high frequency substrate and integrated device application just gradually.Medium ceramic substrate is widely used in thin film circuit, large-scale integrated circuit, high-power hybrid integrated circuit in the electronic industry or the like now.The still traditional Al that is most widely used 2O 3Pottery, its specific inductivity are 9, and dielectric loss is below 0.0001, and thermal conductivity that it is good and temperature stability also are as the indispensable characteristic of ceramic substrate material.
Since last century the seventies, the research of microwave-medium ceramics system development, is added up according to document if do not consider this index of sintering temperature near 40 years, hundreds of kind system has at least been arranged till now, and the up to ten thousand kinds of potteries with good microwave dielectric property are developed.But most of microwave-medium ceramics all has higher sintering temperature (〉=1000 oC).In recent ten years, a kind of more efficiently research approach more and more is subjected to people's attention, i.e. searching itself has low fever's temperature (＜900 oC) material system, this type of material system generally is referred to as low fever's ceramic systems.
In sum, along with being widely used in high-frequency multilayer, microwave-medium ceramics burns fields such as electrical condenser, medium substrate and the super material of medium altogether, LTCC Technology is with its superiority of not replacing, become the mainstream technology of microwave device preparation, further promote all kinds of microwave devices to miniaturization, integrated, development in pluralism.In order to satisfy the production needs of LTCC Technology, research and development have low-loss under certain distribution range specific inductivity, the microwave frequency band (Qf〉5000GHz), resonant frequency temperature profile stable, can become current research focus and difficult point gradually with the novel microwave dielectric pottery of respective electrode material sintering coupling.When taking into account every performance index, that the novel material of being researched and developed should possess is cheap, do not contain or contain less characteristics such as poisonous element, to satisfy the requirement of environmental protection Sustainable development.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned prior art material, a kind of Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof be provided, this stupalith be a kind of do not need to add any sintering agent just can be 540 oC ~ 660 oThe C agglomerating can be applicable to the high-performance Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric stupalith of LTCC, and its minimum sintering temperature is low to moderate 540 oC.
First purpose of the present invention provides a kind of Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials, and the relative permittivity behind its sintering is 5.3 ~ 5.5, low low-frequency dielectric loss (tan δ＜3 * 10 -4, 1MHz), and good microwave property (37,000GHz≤Qf≤63,400GHz), the adjustable (133ppm/ of temperature coefficient of resonance frequency oC≤TCF≤-149ppm/ oC), its principal feature is can be under lower sintering temperature (540 in addition oC ~ 640 oC) carry out sintering, chemical constitution and preparation technology are simple, and thing is mutually single.
Second purpose of the present invention provides the preparation method of the Phenacite type molybdenum-based and tungsten-based microwave dielectric ceramic materials of above-mentioned sintered at ultra low temperature.
The present invention has adopted the most simple and effective solid state reaction agglomerating method to realize the foregoing invention purpose.It at first is the prescription of choosing proper ratio, choose suitable initial oxide and suitable substituent (carbonate), make oxide compound mix by a ball milling, make oxide compound carry out preliminary reaction by the presintering process, by the particle size of secondary ball milling refinement reactant, obtain needed ceramics sample by sintering process at last again.By a kind of so simple effective preparation method, the specific inductivity of the ceramics sample that obtains changes between 5.3 ~ 5.5 with composition, and Qf is distributed in 37,000GHz ~ 63,400GHz, temperature coefficient of resonance frequency at TCF at-133ppm/ oC ~-149ppm/ oAdjustable between the C, sintering temperature 540 oC ~ 640 oC makes it to be applicable to the needs of LTCC technology to enlarge its range of application.
Technical scheme of the present invention is achieved in that
A kind of Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials, this stupalith structure expression is: Li 2(Mo 1-xW x) O 4, 0.0＜x in the formula＜1.0.
The micro-wave dielectric constant ε of described stupalith r=5.3 ~ 5.5, temperature coefficient of resonance frequency TCF=-133 ~-149ppm/ oC, high quality factor Qf=37000 ~ 63400GHz, sintering temperature are 540 oC ~ 640 oDielectric loss is under C, the 1MHz low frequency: tan δ＜3 * 10 -4
The preparation method of described Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials, carry out according to the following steps:
1) with chemical feedstocks MoO 3, WO 3And Li 2CO 3By prescription general formula Li 2(Mo 1-xW x) O 4Preparation, 0.0＜x in the formula＜1.0;
2) with the step 1) batch mixes, ball milling 5 ~ 8 hours is 100 oC ~ 200 oC is oven dry down, is pressed into block body behind 200 orders that sieve;
3) with step 2) blocks through 500 oC ~ 800 oThe C pre-burning, and be incubated 4 ~ 6 hours, obtain sample and burn piece;
4) sample is burnt piece and pulverize, and through 5 ~ 6 hours secondary ball milling, 100 oC ~ 200 oC is oven dry, granulation down, and granulation obtains the porcelain powder after 60 orders and 120 eye mesh screen bilayers sieve;
5) with the porcelain powder pressing forming, 540 oC ~ 640 oSintering became porcelain in 2 ~ 4 hours under the C, obtained Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials.
The molybdenum-based and tungsten-based microwave dielectric ceramic materials of sintered at ultra low temperature of the present invention has following characteristics: relative permittivity low (5.3 ~ 5.5), little (tan δ＜3 * 10 of dielectric loss under the low frequency -4, 1MHz), microwave property good (37,000GHz≤Qf≤63,400GHz), sintering temperature is low by (540 oC ~ 640 oC), the adjustable (133ppm/ of temperature coefficient of resonance frequency oC≤TCF≤-149ppm/ oC), chemical constitution and preparation technology are simple.
Embodiment
Below content of the present invention is described in further detail.
The recipe formulation of Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials of the present invention is: Li 2(Mo 1-xW x) O 4, 0.0＜x in the formula＜1.0.
The concrete preparation process of the molybdenum-based and tungsten-based microwave dielectric ceramic materials of sintered at ultra low temperature of the present invention is: with chemical feedstocks MoO 3, WO 3And Li 2CO 3By prescription general formula Li 2(Mo 1-xW x) O 4Preparation, 0.0＜x in the formula＜1.0.
Thorough mixing ball milling 5 hours is dried after levigate, is sieved, briquetting, then through 500 oThe C pre-burning, and be incubated 4 hours, the block after the pre-burning is carried out secondary ball milling, granulation after the levigate oven dry is sieved through 60 orders and 120 eye mesh screen bilayers, can obtain required porcelain.With porcelain compression moulding on demand, then 540 oC ~ 640 oSintering became porcelain in 2 hours under the C, can obtain the molybdenum-based and tungsten-based microwave dielectric ceramic materials of sintered at ultra low temperature.
Phenacite type molybdenum-based and tungsten-based its principal feature of ultramicrowave medium ceramic material of sintered at ultra low temperature of the present invention is with low melting point oxide MoO 3And Li 2O makes that as pivot this medium ceramic material of sintering becomes possibility at low temperatures.The present invention is relevant with dielectric medium theoretical according to the crystal chemistry principle, with A 2BO 4This typical Phenacite type consists of the basis, uses Li + 1Ion occupies the A position, uses the Mo of high valence state 6+And W 6+The ionic combined ionic occupies the B position, under the prerequisite of not adding any sintering aid, and can be in low-down temperature range (540 oC ~ 640 oC) interior sintering goes out fine and close and new function pottery that good microwave dielectric property is arranged, and this class pottery can be used as radio frequency laminated ceramic capacitor, chip microwave dielectric resonator or wave filter, LTCC system (LTCC), ceramic substrate, the use of mcm dielectric materials such as (MCM).
Embodiment 1:
Raw material MoO with purity assay 3, WO 3And Li 2CO 3By prescription general formula Li 2(Mo 0.99W 0.01) O 4Preparation.Preparation back thorough mixing ball milling 4 hours is dried then, is sieved, briquetting, through 500 oC pre-burning 4 hours was carried out secondary ball milling 5 hours after then the bulk sample after the pre-burning being pulverized again, and levigate oven dry back granulation is sieved through 60 orders and 120 eye mesh screen bilayers, can obtain required porcelain.With porcelain compression moulding on demand (sheet or column), then 540 oC ~ 640 oSintering became porcelain in 2 hours under the C air, can obtain Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials.
The performance of this group stupalith reaches following index:
540 oC ~ 640 oSinter porcelain in the C air, the dielectric properties ε under the microwave r=5.3(13.1GHz), quality factor q=2,800, Qf=37, the temperature coefficient of resonance frequency TCF=-133ppm/ under the 000GHz, microwave oC(25 oC ~ 85 oC).
Embodiment 2:
Raw material MoO with purity assay 3, WO 3And Li 2CO 3By prescription general formula Li 2(Mo 0.5W 0.5) O 4Preparation.Preparation back thorough mixing ball milling 4 hours is dried then, is sieved, briquetting, through 500 oC pre-burning 4 hours was carried out secondary ball milling 5 hours after then the bulk sample after the pre-burning being pulverized again, and levigate oven dry back granulation is sieved through 60 orders and 120 eye mesh screen bilayers, can obtain required porcelain.With porcelain compression moulding on demand (sheet or column), then 540 oC ~ 640 oSintering became porcelain in 2 hours under the C air, can obtain Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials.
The performance of this group stupalith reaches following index:
540 oC ~ 640 oSinter porcelain in the C air, the dielectric properties ε under the microwave r=5.4(14.2GHz), quality factor q=3,500, Qf=49, the temperature coefficient of resonance frequency TCF=-139ppm/ under the 700GHz, microwave oC(25 oC ~ 85 oC).
Embodiment 3:
Raw material MoO with purity assay 3, WO 3And Li 2CO 3By prescription general formula Li 2(Mo 0.01W 0.99) O 4Preparation.Preparation back thorough mixing ball milling 4 hours is dried then, is sieved, briquetting, through 500 oC pre-burning 4 hours was carried out secondary ball milling 5 hours after then the bulk sample after the pre-burning being pulverized again, and levigate oven dry back granulation is sieved through 60 orders and 120 eye mesh screen bilayers, can obtain required porcelain.With porcelain compression moulding on demand (sheet or column), then 540 oC ~ 640 oSintering became porcelain in 2 hours under the C air, can obtain Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials.
The performance of this group stupalith reaches following index:
540 oC ~ 640 oSinter porcelain in the C air, the dielectric properties ε under the microwave r=5.5(15.7GHz), quality factor q=4,300, Qf=63, the temperature coefficient of resonance frequency TCF=-149ppm/ under the 400GHz, microwave oC(25 oC ~ 85 oC).
It is pointed out that according to technical scheme of the present invention, the foregoing description can also be enumerated many, prove,, all can reach purpose of the present invention in the scope that claims of the present invention proposed according to applicant's lot of experiment results.

Claims (3)

1. Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials, it is characterized in that: this stupalith structure expression is: Li 2(Mo 1-xW x) O 4, 0.0＜x in the formula＜1.0.
2. a Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials is characterized in that: the micro-wave dielectric constant ε of described stupalith r=5.3 ~ 5.5, temperature coefficient of resonance frequency TCF=-133 ~-149ppm/ oC, high quality factor Qf=37000 ~ 63400GHz, sintering temperature are 540 oC ~ 640 oDielectric loss is under C, the 1MHz low frequency: tan δ＜3 * 10 -4
3. realize the preparation method of the described Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials of claim 1, it is characterized in that, carry out according to the following steps:
1) with chemical feedstocks MoO 3, WO 3And Li 2CO 3By prescription general formula Li 2(Mo 1-xW x) O 4Preparation, 0.0＜x in the formula＜1.0;
2) with the step 1) batch mixes, ball milling 5 ~ 8 hours is 100 oC ~ 200 oC is oven dry down, is pressed into block body behind 200 orders that sieve;
3) with step 2) blocks through 500 oC ~ 800 oThe C pre-burning, and be incubated 4 ~ 6 hours, obtain sample and burn piece;
4) sample is burnt piece and pulverize, and through 5 ~ 6 hours secondary ball milling, 100 oC ~ 200 oC is oven dry, granulation down, and granulation obtains the porcelain powder after 60 orders and 120 eye mesh screen bilayers sieve;
5) with the porcelain powder pressing forming, 540 oC ~ 640 oSintering became porcelain in 2 ~ 4 hours under the C, obtained Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials.
CN2010101920277A 2010-06-04 2010-06-04 Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof Expired - Fee Related CN101823880B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010101920277A CN101823880B (en) 2010-06-04 2010-06-04 Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101920277A CN101823880B (en) 2010-06-04 2010-06-04 Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof

Publications (2)

Publication Number Publication Date
CN101823880A true CN101823880A (en) 2010-09-08
CN101823880B CN101823880B (en) 2012-11-28

Family

ID=42688078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101920277A Expired - Fee Related CN101823880B (en) 2010-06-04 2010-06-04 Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof

Country Status (1)

Country Link
CN (1) CN101823880B (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102531539A (en) * 2011-10-31 2012-07-04 深圳光启高等理工研究院 Manufacture method of dielectric substrate and metamaterial
CN102683788A (en) * 2012-04-28 2012-09-19 深圳光启创新技术有限公司 Metamaterial harmonic oscillator based on low temperature co-fired ceramic (LTCC) and preparation method
CN103130505A (en) * 2013-03-25 2013-06-05 桂林理工大学 Low-temperature sinterable lithium-based microwave dielectric ceramic Li2W2O7 and preparation method thereof
CN103145418A (en) * 2013-04-01 2013-06-12 桂林理工大学 Tungstate microwave dielectric ceramic Li4W5O17 capable of being sintered at low temperature and preparation method thereof
CN103172367A (en) * 2011-12-22 2013-06-26 深圳市大富科技股份有限公司 Preparation method of microwave dielectric ceramic material
CN103319177A (en) * 2013-06-25 2013-09-25 桂林理工大学 Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof
CN106007713A (en) * 2016-07-08 2016-10-12 天津大学 High-quality-factor calcium tungstate series microwave dielectric ceramic
CN106083043A (en) * 2016-06-07 2016-11-09 电子科技大学 A kind of Li base low Jie low-loss LTCC material and preparation method thereof
CN106747326A (en) * 2015-11-20 2017-05-31 广东顺祥陶瓷有限公司 A kind of heat resisting porcelain
US9718696B2 (en) 2015-03-12 2017-08-01 Shanghai Institute Of Ceramics, Chinese Academy Of Sciences Low temperature co-fired ceramic material and preparation method therefor
CN113354412A (en) * 2021-07-23 2021-09-07 电子科技大学 Temperature-stable low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN113816736A (en) * 2021-11-11 2021-12-21 中国振华集团云科电子有限公司 Ultralow-temperature-sintered low-dielectric-loss LTCC material and preparation method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
《Journal of Physics-condensed Matter》 20040331 Mendez-Blas，A et al "Optical spectroscopy of Pr3+ in M+Bi(XO4)(2),M+=Li or Na and X=W or Mo,locally disorderd single crystals" 第16卷, 第12期 *
《Journal of the American Ceramic Society》 20100430 Di Zhou et al "Microwave Dielectric Ceramics in Li2O-Bi2O3-MoO3 System with Ultra-Low Sintering Temperatures" 第93卷, 第4期 *
《Journal of the Optical Society of America B：Optical Physics》 20061031 Mauricio Rico et al "Polarization and local disorder effects on the properties of Er3+ doped XBi(YO4)2, X=Li or Na and Y=W or Mo, crystalline tunable laser hosts" 第23卷, 第10期 *
《Optical Materials》 20051031 C. Cascales et al "The optical spectroscopy of lanthanides R3+ in ABi(XO4)2 (A = Li, Na; X = Mo, W) and LiYb(MoO4)2 multifunctional single crystals: Relationship with the structural local disorder" 第27卷, *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102531539A (en) * 2011-10-31 2012-07-04 深圳光启高等理工研究院 Manufacture method of dielectric substrate and metamaterial
CN102531539B (en) * 2011-10-31 2014-04-16 深圳光启高等理工研究院 Manufacture method of dielectric substrate and metamaterial
CN103172367A (en) * 2011-12-22 2013-06-26 深圳市大富科技股份有限公司 Preparation method of microwave dielectric ceramic material
CN102683788B (en) * 2012-04-28 2015-11-18 深圳光启创新技术有限公司 A kind of Meta-material harmonic oscillator based on LTCC and preparation method
CN102683788A (en) * 2012-04-28 2012-09-19 深圳光启创新技术有限公司 Metamaterial harmonic oscillator based on low temperature co-fired ceramic (LTCC) and preparation method
CN103130505A (en) * 2013-03-25 2013-06-05 桂林理工大学 Low-temperature sinterable lithium-based microwave dielectric ceramic Li2W2O7 and preparation method thereof
CN103130505B (en) * 2013-03-25 2014-12-17 桂林理工大学 Low-temperature sinterable lithium-based microwave dielectric ceramic Li2W2O7 and preparation method thereof
CN103145418A (en) * 2013-04-01 2013-06-12 桂林理工大学 Tungstate microwave dielectric ceramic Li4W5O17 capable of being sintered at low temperature and preparation method thereof
CN103319177A (en) * 2013-06-25 2013-09-25 桂林理工大学 Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof
US9718696B2 (en) 2015-03-12 2017-08-01 Shanghai Institute Of Ceramics, Chinese Academy Of Sciences Low temperature co-fired ceramic material and preparation method therefor
CN106747326B (en) * 2015-11-20 2019-06-21 广东顺祥陶瓷有限公司 A kind of heat resisting porcelain
CN106747326A (en) * 2015-11-20 2017-05-31 广东顺祥陶瓷有限公司 A kind of heat resisting porcelain
CN106083043A (en) * 2016-06-07 2016-11-09 电子科技大学 A kind of Li base low Jie low-loss LTCC material and preparation method thereof
CN106083043B (en) * 2016-06-07 2019-03-05 电子科技大学 Low Jie's low-loss LTCC material of a kind of Li base and preparation method thereof
CN106007713A (en) * 2016-07-08 2016-10-12 天津大学 High-quality-factor calcium tungstate series microwave dielectric ceramic
CN113354412A (en) * 2021-07-23 2021-09-07 电子科技大学 Temperature-stable low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN113354412B (en) * 2021-07-23 2022-04-22 电子科技大学 Temperature-stable low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN113816736A (en) * 2021-11-11 2021-12-21 中国振华集团云科电子有限公司 Ultralow-temperature-sintered low-dielectric-loss LTCC material and preparation method thereof
CN113816736B (en) * 2021-11-11 2023-02-17 中国振华集团云科电子有限公司 Ultralow-temperature-sintered low-dielectric-loss LTCC material and preparation method thereof

Also Published As

Publication number Publication date
CN101823880B (en) 2012-11-28

Similar Documents

Publication Publication Date Title
CN101823880B (en) Phenacite type molybdenum-based and tungsten-based ultralow temperature sintered microwave dielectric ceramic materials and preparation method thereof
CN102249663B (en) Bismuth-vanadium-based low temperature sintered microwave dielectric ceramic material and preparation method thereof
CN101318815B (en) Bismuth-based molybdenum-based microwave dielectric ceramic material sintered at ultra low temperature and manufacture of the same
CN101870584B (en) Preparation method of molybdenum-based ultralow-temperature sintering microwave medium ceramic materials
CN103172376B (en) Scheelite type microwave dielectric ceramic material and preparation method thereof
CN102718473B (en) Bismuth-base microwave dielectric ceramic sintered at low temperature and preparation method thereof
CN101362647A (en) Low temperature sintering lithium-base microwave dielectric ceramic material and preparation thereof
CN101823879B (en) Scheelite type molybdenum-based ultralow temperature-sintered microwave dielectric ceramic material and preparation method thereof
CN102249664A (en) Potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN101798220A (en) Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN103951425B (en) A kind of temperature-stable scheelite-type structure microwave-medium ceramics and preparation method thereof
CN103896577B (en) A kind of vanadium base temperature-stable low-temperature sintered LTCC microwave dielectric ceramics material and its preparation method and application
CN101723663B (en) Microwave medium ceramics with low temperature sintering perovskite structure and preparation method thereof
CN103044025A (en) Molybdenum-based low-temperature sintering temperature stable type microwave dielectric ceramic material and preparation method thereof
CN103601494A (en) Tungstate low-temperature co-fired ceramic material and preparation method thereof
CN104016670B (en) A kind of low-temperature sintering temperature-stabilized microwave medium ceramic material and preparation method thereof
CN104177085A (en) Molybdenum-based temperature-stable microwave medium ceramic and preparation method thereof
CN102887708B (en) Microwave dielectric ceramic NaCa2(Mg1-xZnx)2V3O12 capable of sintering at low temperature and preparation method
CN104030682B (en) A kind of without glass low-temperature sintering temperature stable type microwave dielectric ceramic materials and preparation method thereof
CN102173782B (en) Molybdenum-based and titanium-based temperature stabilized microwave dielectric ceramic material and preparation method thereof
CN103896588B (en) A kind of calcium molybdate base temperature-stable low-temperature sintered LTCC microwave dielectric ceramics material and its preparation method and application
CN105294103A (en) Vanadium based temperature stable microwave dielectric ceramic and preparation method thereof
CN105314976A (en) Ti-based low loss K value microwave dielectric ceramic and preparation method thereof
CN109650886A (en) A kind of Ba-Mg-Ta system LTCC material and preparation method thereof
CN103467092A (en) Temperature stabilization type low-temperature sintering LTCC (low-temperature co-fired ceramic) microwave dielectric ceramic material as well as preparation method and application thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121128

Termination date: 20180604

CF01 Termination of patent right due to non-payment of annual fee