CN101807558B - Element sealing and bonding structure and process thereof - Google Patents
Element sealing and bonding structure and process thereof Download PDFInfo
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- CN101807558B CN101807558B CN200910004134XA CN200910004134A CN101807558B CN 101807558 B CN101807558 B CN 101807558B CN 200910004134X A CN200910004134X A CN 200910004134XA CN 200910004134 A CN200910004134 A CN 200910004134A CN 101807558 B CN101807558 B CN 101807558B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
The invention discloses an element sealing and bonding structure and a process thereof. The element sealing and bonding structure comprises a buffer bump layer, a plurality of conductive bonding parts and a sealing and bonding part. The buffer bump layer is deployed between an element and a substrate, and comprises a plurality of first parts and a plurality of second parts, and the second parts are arranged around the periphery of the first parts. Each conductive bonding part comprises first electrodes covered on all the first parts and second electrodes on the substrate, and all the first electrodes are electrically connected with all the second electrodes. The sealing and bonding part comprises a bonding ring on the substrate, and the bonding ring and the second parts are mutually bonded, so as to form a sealing space between the element and the substrate.
Description
Technical field
The present invention relates to a kind of sealing and bonding structure, and particularly relate to a kind of sealing and bonding structure and technology thereof that reaches element sealing and packaging effect simultaneously.
Background technology
Take a broad view of the development trend of medical electronics product; Pouring-in (implantable) microencapsulated element and biocompatibility (biocompatibility) technology are played the part of considerable role; If can't reach the requirement of biocompatibility and sealing; As far as injecting the human body or the animal of microencapsulated element, the destruction that the activity of the erosion of body fluid, degraded or musculature produced and noxious substance is invaded in vivo will have sizable danger.
Adopting giving birth to of titanium lid (titanium can) to cure in the electronic encapsulated components, with the electrode of multilayer ceramic substrate that signal conduction is extremely outside.The making of this multilayer ceramic substrate is to adopt LTCC (LTCC; Low-Temperature Cofired Ceramics) technology;, re-use lithographic printing and be coated with circuit as electrode with Low ESR metals such as gold, silver, copper, spend sintering and form integrated ceramic component in 900 degree Celsius 850 at last; And this integrated ceramic component packed in the gas-tight seal cavity of titanium lid, and accomplish the technology of sealing.
In recent years; In order to reach microminiaturized requirement, adopt semiconductor integrated circuit technique and encapsulation technology, can produce microencapsulated element miscellaneous; It is a base material with silicon, glass or high molecular polymer; And combine micro-electromechanical technology and biomedical technology, design and make have microminiaturization, fast, biological and medical detecting element, for example genetic chip, protein-chip, corpse or other object for laboratory examination and chemical testing process chip and the biology sensing chip etc. of parallel processing ability; Fully principles such as utilization molecular biology, analytical chemistry, biochemical reaction are carried out a large amount of biochemical sensings or reaction fast on small area.
In addition; For pace maker (pacemaker), nerve stimulator (neurostimulator) or blood glucose monitor pouring-in microencapsulated elements such as (blood glucose monitor); Invade in vivo for fear of noxious substance, encapsulant and encapsulation reliability are being played the part of very important role on safety.
Summary of the invention
The present invention proposes a kind of element sealing and bonding structure, in order to component package on substrate, this element sealing integrated structure comprises buffering projection layer, a plurality of conductive bond and seal joints.Buffering projection layer is disposed between this element and this substrate, and this buffering projection layer comprises a plurality of firsts and second portion, and this second portion is surrounded on the periphery of those firsts.A plurality of conductive bond are electrically connected between this element and this substrate, and wherein each conductive bond comprises and is covered in respectively first electrode of this first and second electrode on this substrate, and respectively this first electrode electrically connects with this second electrode respectively.Seal joints is surrounded on the periphery of those conductive bond, and the sealing junction surface comprises the adapter ring on this substrate, and this adapter ring and this second portion be bonded with each other, so that form seal cavity between this element and this substrate.
The present invention proposes a kind of element sealed engagement technology.At first, the predetermined base material that forms element is provided; Form resilient coating on this element; This resilient coating of patterning comprises the buffering projection layer of a plurality of firsts and second portion with formation, and wherein this second portion is surrounded on the periphery of those firsts; Form first electrode in this first respectively; Substrate is provided, and this substrate is formed with a plurality of second electrodes and adapter ring, and this adapter ring is around the periphery of those second electrodes.Dispose this element on this substrate, wherein respectively this first electrode electrically connects corresponding to this second electrode respectively and with this second electrode respectively, and this adapter ring is corresponding is bonded with each other with this second portion, so that form seal cavity between this element and this substrate.
The present invention proposes a kind of element sealing and bonding structure, in order to component package on substrate, this element sealing integrated structure comprises buffering projection layer, a plurality of conductive bond and seal joints.Buffering projection layer is disposed between this element and this substrate, and this element has a plurality of connection pads, and this buffering projection layer has annulus, and this annulus is surrounded on the periphery of those connection pads.A plurality of conductive bond are electrically connected between this element and this substrate; Wherein each conductive bond comprises on this element and to electrically connect respectively the metal coupling of this connection pad and second electrode on this substrate, and respectively this metal coupling electrically connects with this second electrode respectively.Seal joints is surrounded on the periphery of those conductive bond, and the sealing junction surface comprises the adapter ring on this substrate, and this adapter ring and this annulus be bonded with each other, so that form seal cavity between this element and this substrate.
The present invention proposes a kind of element sealed engagement technology.At first, the predetermined base material that forms element is provided, this element has a plurality of connection pads; Form resilient coating on this element; This resilient coating of patterning has the buffering projection layer of annulus with formation, and wherein this annulus is surrounded on the periphery of those connection pads; Form a plurality of metal couplings on this element, and respectively this metal coupling and respectively this connection pad electric connection; Substrate is provided, and this substrate is formed with a plurality of second electrodes and adapter ring, and this adapter ring is around the periphery of those second electrodes.Dispose this element on this substrate, wherein respectively this metal coupling electrically connects corresponding to this second electrode respectively and with this second electrode respectively, and this adapter ring is corresponding is bonded with each other with this annulus, so that form seal cavity between this element and this substrate.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Figure 1A and Figure 1B are the generalized section of the element sealing and bonding structure of the present invention two embodiment.
Fig. 2 A～Fig. 2 E is the schematic flow sheet of manufacture method of the element sealing and bonding structure of Figure 1A.
Fig. 3 A and Fig. 3 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.
Fig. 4 A and Fig. 4 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.
Fig. 5 A and Fig. 5 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.
Fig. 6 A and Fig. 6 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.
Description of reference numerals
1001～1010: element sealing and bonding structure
100: element
100S: active surface
100P: protective layer
102: connection pad
104: metal level
104a: bump bottom metal layer
110 ': padded coaming
110: buffering projection layer
110a: first
110b: second portion
110c: third part
110d: annulus
120: conductive bond
130: seal joints
140: substrate
W: base material
S1: first electrode
S2: second electrode
S3: metal coupling
H1: the first sticky metals layer
H2: the second sticky metals layer
H3: the 3rd sticky metals layer
R1: adapter ring
C: seal cavity
150: substrate
152: via
S3: third electrode
S4: Neural stimulation electrodes
160: carrier
162: connection pad
170: biocompatible coating
100a: first element
150a: first substrate
100b: second element
150b: second substrate
Embodiment
Figure 1A and Figure 1B are the generalized section of the element sealing and bonding structure of the present invention two embodiment.Fig. 2 A～Fig. 2 E is the schematic flow sheet of manufacture method of the element sealing and bonding structure of Figure 1A.
Please refer to Figure 1A, element sealing and bonding structure 1001 comprises buffering projection layer 110, a plurality of conductive bond 120 and seal joints 130.Wherein, the buffering projection layer 110 second portion 110b (annulus) that for example forms a plurality of 110a of first and be surrounded on the periphery of the 110a of these firsts with the technology of patterning.The material of buffering projection layer 110 can be the polymer of macromolecular material; For example be epoxy resin or polyimide resin etc.; Its practice is that macromolecular material is coated on the base material (for example being silicon wafer) of predetermined formation element 100; Make public again, developing process or technologies such as photoetch, dry ecthing so that macromolecular material forms predetermined pattern (a plurality of 110a of first and the second portion 110b that is surrounded on the periphery of the 110a of these firsts).
The Patternized technique of relevant buffering projection layer 110 and detailed structure please refer to Fig. 2 A～Fig. 2 D.At first; Base material W is provided; For example be semiconductor substrate, in order to form one or more integrated circuit components 100 (only illustrating one of which), this element 100 has active surperficial 100S and protective layer 100P; And connection pad 102 (only illustrating one of which) is disposed on the active surperficial 100S, and protective layer 100P covers active surperficial 100S and manifests connection pad 102.Then, please refer to Fig. 2 B and Fig. 2 C, on protective layer 100P and connection pad 102, and form padded coaming 110 ' (macromolecular material of macromolecular material or photosensitive type) on element 100 with sputter or the comprehensive formation metal level 104 of vapor deposition mode.Then, please refer to Fig. 2 D, patterning padded coaming 110 '; For example be make public, developing process or photoetch, dry etching process; Comprise the buffering projection layer 110 of a plurality of 110a of first (only illustrating one of which) and second portion 110b with formation, wherein second portion 110b is surrounded on the periphery of the 110a of these firsts, therefore; The annular projection structure that second portion 110b just is overlying on a plurality of 110a of first complete packet has the effect of buffering and sealing simultaneously.Afterwards; Please refer to Fig. 2 E; Mode with sputter or vapor deposition forms the first electrode S1 (its material for example is copper, aluminium or gold) in the 110a of each first last (for example covering sidewall and the upper surface of the 110a of first); And metal level 104 becomes bump bottom metal layer 104a afterwards through etching, and electrically connects with the first electrode S1 that is covered in each first part 110a.
In the present embodiment, the 110a of these firsts to accomplish in the lump with Patternized technique, with the step of minimizing technology, and can carry out follow-up sealing technology and component package step with second portion 110b simultaneously.In addition, for example form spacing between 110a of these firsts and the second portion 110b, both structurally are separated from each other with etching.But in another embodiment, structurally interconnect between 110a of these firsts and the second portion 110b, have the effect of buffering and sealing equally.
Another embodiment shown in Figure 1B, element sealing and bonding structure 1002 comprise buffering projection layer 110, a plurality of conductive bond 120 and seal joints 130.Wherein, the buffering projection layer 110 second portion 110b that for example forms a plurality of 110a of first and be surrounded on the periphery of the 110a of these firsts with the technology of patterning.The manufacture method of relevant buffering projection layer 110 please refer to the step of Fig. 2 A～Fig. 2 D, is not described in detail in this.What the element sealing integrated structure of present embodiment and Figure 1A and the technology of Fig. 2 A～Fig. 2 D were different is; Has third part (connecting portion) 110c between 110a of these firsts and the second portion 11b; And structurally be connected to one (material is identical); Do not form spacing via etching, thus the bond strength of ability enhanced leaktightness, and the effect that reaches the element sealing simultaneously and encapsulate.
Then; Please refer to Figure 1A and Figure 1B; Conductive bond 120 is electrically connected between element 100 and the substrate 140 (for example being printed circuit board (PCB)); In order to the signal of telecommunication is input to element 100 or outputs to the outside via substrate 140 via substrate 140; And each conductive bond 120 comprises the first electrode S1 that is covered in the 110a of each first and the second electrode S2 on the substrate 140, and each first electrode S1 and each second electrode S2 for example electrically connect through the first sticky metals layer H1 (nickel billon or titanium-tungsten).In addition, seal joints 130 is surrounded on the periphery of these conductive bond 120.Seal joints 130 comprises the adapter ring R1 (its material for example is copper, aluminium or gold) on the substrate 140; Be surrounded on the periphery of these second electrodes S2; And this adapter ring R1 and second portion 110b for example are bonded with each other through the second sticky metals layer H2 (nickel billon or titanium-tungsten) and the 3rd sticky metals layer H3 (nickel billon or titanium-tungsten) and form gas-tight hermetically-sealed construction, so that form seal cavity C between element 100 and the substrate 140.
In two above-mentioned embodiment; The first sticky metals layer H1 for example is formed at each first electrode S1 upward (referring to Fig. 2 E) with the mode of sputter or vapor deposition; And second sticky metals layer H2 (can form with step with the first electrode S1) and the 3rd sticky metals layer H3 for example are formed at respectively on second portion 100b and the adapter ring R1; And be disposed at 140 last times of substrate when element 100; Also can carry out the hot pressing step; So that each first sticky metals layer H1 electrically be engaged between each first electrode S1 and each the second electrode S2, and the second sticky metals layer H2 closely engages (eutectic joint) between adapter ring R1 and second portion 110b with the 3rd sticky metals layer H3, with the bond strength of enhanced leaktightness.But the first sticky metals layer H1, the second sticky metals layer H2 and the 3rd sticky metals layer H3 are merely embodiments of the invention, are not in order to restriction the present invention.
Fig. 3 A and Fig. 3 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.Please refer to Fig. 3 A and Fig. 3 B; This element sealing and bonding structure 1003,1004 is in order to be packaged in element 100 on the substrate 150 (for example being flexible circuit board); And on the first surface of substrate 150 except having a plurality of second electrode S2 and adapter ring R1, the second surface of substrate 150 also comprises a plurality of third electrode S3.These third electrodes S3 electrically connects with these second electrodes S2 respectively through the via 152 of substrate 150.In addition, also comprise Neural stimulation electrodes S4 (or Electricity conductive plaster) on each third electrode S3, can be used in the transcutaneous electrical neural stimulator (TENS, Transcutaneous Electro NerveStimulator).Each Neural stimulation electrodes S4 can be via its point discharge, so that electricity treatment or the required stimulating current of muscle rehabilitation to be provided.
In addition; Fig. 4 A and Fig. 4 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition; Wherein Fig. 4 A is the generalized section with element sealing and bonding structure 1005 of biocompatible coating 170, and Fig. 4 B is the generalized section of the element sealing and bonding structure 1006 of stacked encapsulation.Please be earlier with reference to figure 4A; With pouring-in living doctor's element such as pace maker, nerve stimulator or blood glucose monitor is example; This element sealing and bonding structure 1005 is in order to being packaged in element 100 (for example single-chip element) on the substrate 150, and substrate 150 can electrically connect with the connection pad 162 of carrier 160 through a plurality of electric conductor S5 (for example soldered ball), to pass the signal along to the outside of live body; And also comprise biocompatible coating 170 (for example being avirulence high molecular polymers such as silica gel) on the substrate 150; It is covered in element 100 around, except the coverage rate and the sealing of reinforcing element 100, more can not produce harm to the tissue of live body.
Then; Please refer to Fig. 4 B; The element sealing and bonding structure 1006 of stacked encapsulation is in order to be encapsulated in each element 100 (for example pouring-in single-chip element of giving birth to doctor's element or other purposes) on each substrate 150; To form stacked multicore sheet potted element; Wherein the second electrode S2 of the first electrode S1 of the first element 100a and the first substrate 150a electrically connects; Then the third electrode S3 of the first substrate 150a is via a plurality of electric conductor S5 (for example soldered ball) and metallic pad 102 electric connections of passing a plurality of conductions perforation S6 with the second element 100b of the second element 100b; Then the second electrode S2 of the first electrode S1 of the second element 100b and the second substrate 150b electrically connects, and then the third electrode S3 of the second substrate 150b electrically connects with the connection pad 162 of carrier 160 via a plurality of electric conductor S5 (for example soldered ball), so that signal is passed to the outside.Said as Fig. 4 A; Also comprise biocompatible coating 170 (for example being avirulence high molecular polymers such as silica gel) on each substrate 150; It is covered in each element 100 around, except coverage rate and the sealing of strengthening each element 100, more can not produce harm to the tissue of live body.Certainly, biocompatible coating 170 can also replace by other polymeric coating layers (for example epoxy resin), is not in order to restriction the present invention.
Moreover Fig. 5 A and Fig. 5 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.Please refer to Fig. 5 A and Fig. 5 B, this element sealing and bonding structure 1007,1008 is in order to being packaged in element 100 on the substrate 140,150, and has a plurality of second electrode S1 and adapter ring R1 on the first surface of substrate 140,150.In addition, the second surface of substrate 150 also comprises a plurality of third electrode S3.Each third electrode S3 electrically connects with each second electrode S2 respectively through the via 152 of substrate 150.In addition, in Fig. 5 B, also comprise Neural stimulation electrodes S4 (or Electricity conductive plaster) on each third electrode S3, can be used in the transcutaneous electrical neural stimulator (TENS).Each Neural stimulation electrodes S4 can be via its point discharge, so that electricity treatment or the required stimulating current of muscle rehabilitation to be provided.Yet; What the embodiment of Fig. 5 A and Fig. 5 B was different with above-mentioned two embodiment (referring to Figure 1A, 3A) is; The 110a of first of buffering projection layer 110 is not the top that is formed on connection pad 102 via bump bottom metal layer 104a; And be formed near the protective layer the connection pad 102; Then form the first electrode S1 via the mode of sputter or vapor deposition again and between each connection pad 102 and the 110a of each first, (for example cover sidewall and the upper surface of each connection pad 102 and the 110a of each first), so that each connection pad 102 is through each first electrode S1 and each second electrode S2 electric connection.
About the technology of the buffering projection layer 110 of the technology of the buffering projection layer 110 of Fig. 5 A and Fig. 5 B and above-mentioned Fig. 2 D and Fig. 2 E similar; Difference is to omit the technology of the bump bottom metal layer 104 of Fig. 2 B; And after patterning buffering projection layer 110; Mode with sputter or vapor deposition forms the first electrode S1 again, to electrically connect each connection pad 102.Therefore, the position of the 110a of first of buffering projection layer 110 does not limit the top that is positioned at connection pad 102, also can extend toward inboard via the first electrode S1 that reroutes, to be fit to the contact design of different demands.
Then, Fig. 6 A and Fig. 6 B are the present invention's generalized section of the element sealing and bonding structure of two embodiment in addition.Please refer to Fig. 6 A and Fig. 6 B, element sealing and bonding structure 1009,1010 comprises buffering projection layer 110, a plurality of conductive bond 120 and seal joints 130.Wherein, Buffering projection layer 110 is to make annulus 110d (among Fig. 6 B) with the polymer of macromolecular material; And adopt electric conducting material to make a plurality of metal coupling S3 (replacing original 110a of first); And metal coupling S3 can electrically connect through bump bottom metal layer 104a and each connection pad 102, have the conductive bond 120 of electricity connection function so that the first electrode S1, metal coupling S3 and the second electrode S2 constitute, and the annulus 110d that is surrounded on around these metal couplings S3 engages with seal joints 130; The effect that has sealing and buffering simultaneously is so that form seal cavity C between element 100 and the substrate 140.
About the technology of the buffering projection layer 110 of the technology of the metal coupling S3 of Fig. 6 A and Fig. 6 B and above-mentioned Fig. 2 D and Fig. 2 E similar; Difference is to form metal coupling S3 on connection pad 102 with plating mode; And after forming metal coupling S3; Mode with sputter or vapor deposition forms the first electrode S1 again, to cover each metal coupling S3.
In the present embodiment, if the material of above-mentioned metal coupling S3 when gold can directly electrically connect through the first sticky metals layer H1 and the second electrode S2, and do not need earlier the formation first electrode S1 on metal coupling S3.In addition, if when the material copper of metal coupling S3 or copper alloy, can be through the first electrode S1 on the metal coupling S3 as anti oxidation layer (for example nickel/gold layer), to avoid the surperficial oxidation of copper.
In sum; The present invention proposes multiple element sealing and bonding structure and technology thereof; Can be applicable on the microencapsulated element miscellaneous for example genetic chip, protein-chip, corpse or other object for laboratory examination and chemical testing process chip and biology sensing chip etc., or pouring-in giving birth in doctor's element.Except come the bond strength of enhanced leaktightness through buffering projection layer, also can reach the effect of element sealing and encapsulation simultaneously, avoid noxious substance to invade in vivo.In addition; Buffering projection layer is to accomplish with Patternized technique; Do not need a plurality of photomasks of extra making and carry out the multiple tracks photo-marsk process; Reducing the step of technology, and follow-up sealing technology and component package step can be carried out simultaneously, and then simplify element sealing and packaging technology and reduce production costs.
Though the present invention discloses as above with embodiment; Right its is not in order to qualification the present invention, and those of ordinary skill in any affiliated technical field is not breaking away from the spirit and scope of the present invention; When doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (35)
1. element sealing and bonding structure, in order to component package on substrate, this element sealing integrated structure comprises:
Buffering projection layer is disposed between this element and this substrate, and this buffering projection layer comprises a plurality of firsts and second portion, and this second portion is surrounded on the periphery of said first;
A plurality of conductive bond are electrically connected between this element and this substrate, and wherein each conductive bond comprises and is covered in respectively first electrode of this first and second electrode on this substrate, and respectively this first electrode electrically connects with this second electrode respectively; And
Seal joints is surrounded on the periphery of these a plurality of conductive bond, and the sealing junction surface comprises the adapter ring on this substrate, and this adapter ring and this second portion be bonded with each other, so that form seal cavity between this element and this substrate.
2. element sealing and bonding structure as claimed in claim 1 wherein is formed with spacing between these a plurality of firsts and this second portion, and structurally is separated from each other.
3. element sealing and bonding structure as claimed in claim 1 wherein has third part between these a plurality of firsts and this second portion, and structurally interconnects.
4. element sealing and bonding structure as claimed in claim 1, wherein the material of this buffering projection layer comprises macromolecular material.
5. element sealing and bonding structure as claimed in claim 1, wherein this first electrode and respectively also comprise the first sticky metals layer between this second electrode respectively.
6. element sealing and bonding structure as claimed in claim 1 wherein also comprises the second sticky metals layer and the 3rd sticky metals layer between this adapter ring and this second portion.
7. element sealing and bonding structure as claimed in claim 1, wherein this substrate also comprises a plurality of third electrodes, and these a plurality of third electrodes electrically connect with these a plurality of second electrodes respectively through this substrate.
8. element sealing and bonding structure as claimed in claim 7 wherein respectively also comprises Neural stimulation electrodes on this third electrode.
9. element sealing and bonding structure as claimed in claim 1 wherein also comprises biocompatible coating on this substrate, be covered in this element around.
10. element sealing and bonding structure as claimed in claim 9, wherein this element is the pouring-in doctor's of giving birth to element.
11. element sealing and bonding structure as claimed in claim 1; Wherein this element has a plurality of connection pads; And respectively this first is disposed at respectively on this connection pad via bump bottom metal layer, this bump bottom metal layer be covered in respectively this first partly this first electrode and electrically connect.
12. element sealing and bonding structure as claimed in claim 1, wherein this element has a plurality of connection pads, and this first electrode is formed at respectively this connection pad and respectively between this first, and respectively this connection pad electrically connects through this first electrode respectively and this second electrode respectively.
13. element sealing and bonding structure as claimed in claim 1, wherein this element comprises single-chip element or stacked multicore sheet potted element.
14. an element sealed engagement technology comprises:
The predetermined base material that forms element is provided;
Form resilient coating on this element;
This resilient coating of patterning comprises the buffering projection layer of a plurality of firsts and second portion with formation, and wherein this second portion is surrounded on the periphery of these a plurality of firsts;
Form first electrode in this first respectively;
Substrate is provided, and this substrate is formed with a plurality of second electrodes and adapter ring, and this adapter ring is around the periphery of these a plurality of second electrodes; And
Dispose this element on this substrate, wherein respectively this first electrode electrically connects corresponding to this second electrode respectively and with this second electrode respectively, and this adapter ring is corresponding is bonded with each other with this second portion, so that form seal cavity between this element and this substrate.
15. element sealed engagement technology as claimed in claim 14 wherein in the step of this resilient coating of patterning, is formed with spacing through etching between these a plurality of firsts and this second portion, and structurally is separated from each other.
16. element sealed engagement technology as claimed in claim 14 wherein in the step of this resilient coating of patterning, is formed with third part respectively between these a plurality of firsts and this second portion, and structurally interconnects.
17. element sealed engagement technology as claimed in claim 14, wherein form first electrode in respectively this first partly after, also comprise:
Form the first sticky metals layer on this first electrode respectively;
Form the second sticky metals layer on this second portion;
Form the 3rd sticky metals layer on this adapter ring; And
With this arrangements of components when this substrate; Also carry out the hot pressing step; So that respectively this first sticky metals layer electrically is engaged in respectively this first electrode and respectively between this second electrode, and this second sticky metals layer and the 3rd sticky metals layer are engaged between this adapter ring and this second portion.
18. element sealed engagement technology as claimed in claim 14 wherein provides in the step of this substrate, this substrate also comprises a plurality of third electrodes, and these a plurality of third electrodes electrically connect with these a plurality of second electrodes respectively through this substrate.
19. element sealed engagement technology as claimed in claim 18 wherein provides in the step of this substrate, also comprises forming Neural stimulation electrodes on this third electrode respectively.
20. element sealed engagement technology as claimed in claim 14 wherein disposes this element on this substrate the time, also comprises the formation biocompatible coating, be covered in this element around.
21. an element sealing and bonding structure, in order to component package on substrate, this element sealing integrated structure comprises:
Buffering projection layer is disposed between this element and this substrate, and this element has a plurality of connection pads, and this buffering projection layer has annulus, and this annulus is surrounded on the periphery of these a plurality of connection pads;
A plurality of conductive bond; Be electrically connected between this element and this substrate; Wherein each conductive bond comprises on this element and to electrically connect respectively the metal coupling of this connection pad and second electrode on this substrate, and respectively this metal coupling electrically connects with this second electrode respectively; And
Seal joints is surrounded on the periphery of these a plurality of conductive bond, and the sealing junction surface comprises the adapter ring on this substrate, and this adapter ring and this annulus be bonded with each other, so that form seal cavity between this element and this substrate.
22. element sealing and bonding structure as claimed in claim 21, wherein the material of this buffering projection layer comprises macromolecular material.
23. element sealing and bonding structure as claimed in claim 21, wherein this metal coupling and respectively also comprise the first sticky metals layer between this second electrode respectively.
24. element sealing and bonding structure as claimed in claim 21 wherein also comprises the second sticky metals layer and the 3rd sticky metals layer between this adapter ring and this annulus.
25. element sealing and bonding structure as claimed in claim 21, wherein this substrate also comprises a plurality of third electrodes, and these a plurality of third electrodes electrically connect with these a plurality of second electrodes respectively through this substrate.
26. element sealing and bonding structure as claimed in claim 25 wherein respectively also comprises Neural stimulation electrodes on this third electrode.
27. element sealing and bonding structure as claimed in claim 21 wherein also comprises biocompatible coating on this substrate, be covered in this element around.
28. element sealing and bonding structure as claimed in claim 27, wherein this element is the pouring-in doctor's of giving birth to element.
29. element sealing and bonding structure as claimed in claim 21, wherein respectively this metal coupling is disposed at respectively on this connection pad via bump bottom metal layer, and this bump bottom metal layer electrically connects with first electrode that is covered on this metal coupling respectively.
30. element sealing and bonding structure as claimed in claim 21, wherein this element comprises single-chip element or stacked multicore sheet potted element.
31. an element sealed engagement technology comprises:
The predetermined base material that forms element is provided, and this element has a plurality of connection pads;
Form resilient coating on this element;
This resilient coating of patterning has the buffering projection layer of annulus with formation, and wherein this annulus is surrounded on the periphery of these a plurality of connection pads;
Form a plurality of metal couplings on this element, and respectively this metal coupling and respectively this connection pad electric connection;
Substrate is provided, and this substrate is formed with a plurality of second electrodes and adapter ring, and this adapter ring is around the periphery of these a plurality of second electrodes; And
Dispose this element on this substrate, wherein respectively this metal coupling electrically connects corresponding to this second electrode respectively and with this second electrode respectively, and this adapter ring is corresponding is bonded with each other with this annulus, so that form seal cavity between this element and this substrate.
32. element sealed engagement technology as claimed in claim 31, wherein form a plurality of metal couplings on this element after, also comprise:
Form the first sticky metals layer on this metal coupling respectively;
Form the second sticky metals layer on this annulus;
Form the 3rd sticky metals layer on this adapter ring; And
With this arrangements of components when this substrate; Also carry out the hot pressing step; So that respectively this first sticky metals layer electrically is engaged in respectively this metal coupling and respectively between this second electrode, and this second sticky metals layer and the 3rd sticky metals layer are engaged between this adapter ring and this annulus.
33. element sealed engagement technology as claimed in claim 31 wherein provides in the step of this substrate, this substrate also comprises a plurality of third electrodes, and these a plurality of third electrodes electrically connect with these a plurality of second electrodes respectively through this substrate.
34. element sealed engagement technology as claimed in claim 33 wherein provides in the step of this substrate, also comprises forming Neural stimulation electrodes on this third electrode respectively.
35. element sealed engagement technology as claimed in claim 31 wherein disposes this element on this substrate the time, also comprises the formation biocompatible coating, be covered in this element around.
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| US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
| CN106298557B (en) * | 2015-05-22 | 2019-08-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of low-temperature bonding method based on Au/In isothermal solidification |
| CN105609439B (en) * | 2016-02-26 | 2018-04-20 | 海迪科（南通）光电科技有限公司 | A kind of CSP eutectic welding methods |
| CN112240810B (en) * | 2019-07-18 | 2022-05-10 | 美宸科技股份有限公司 | Pressure sensing device and manufacturing method thereof |
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| CN1763938A (en) * | 2004-10-21 | 2006-04-26 | 财团法人工业技术研究院 | Package bonding structure of element |
| CN1309067C (en) * | 2003-09-24 | 2007-04-04 | 财团法人工业技术研究院 | Elastic lug structure and its mfg method |
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| CN1309067C (en) * | 2003-09-24 | 2007-04-04 | 财团法人工业技术研究院 | Elastic lug structure and its mfg method |
| CN1763938A (en) * | 2004-10-21 | 2006-04-26 | 财团法人工业技术研究院 | Package bonding structure of element |
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