CN101806585A - Method for measuring appearance of MEMS (Micro Electro Mechanical System) device based on infrared light interference technique - Google Patents
Method for measuring appearance of MEMS (Micro Electro Mechanical System) device based on infrared light interference technique Download PDFInfo
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Abstract
The invention relates to appearance testing of an MEMS (Micro Electro Mechanical System) device, in particular to a method for measuring the appearance of an MEMS device based on an infrared light interference technique, which solves the problems of difficult operation, larger measurement error and the like when the structure appearance of the MEMS device is measured by the traditional infrared light interference technique. The method for measuring the appearance of the MEMS device based on the infrared light interference technique comprises the following steps of: (1) preparing the MEMS device to be measured before measurement; (2) measuring the MEMS device to be measured by using an interferometer, and arranging a semiconductor wafer, the material quality of which is the same as the material quality of the MEMS device to be measured in front of an optical lens of a reference path. The method is reasonable and convenient in operation, can accurately embody the appearance condition of the microstructure of the MEMS device, is beneficial to quality evaluation of the MEMS device, provides a basis for improving the machining technology and the machining processes of the MEMS device, promotes the improvement of the quality and the using performance of the MEMS device, and is suitable for the fields of reconstruction of the internal structure of the MEMS device based on semiconductor materials, evaluation of the roughness of the bonding interface of a bonding sample, real-time and on-line detection of the MEMS technology, and the like.
Description
Technical field
The present invention relates to the pattern test of MEMS device, specifically is a kind of MEMS device topography measuring method based on the infrared light interference technique.
Background technology
Along with the development of micro-electromechanical system (MEMS), also more and more higher to MEMS device institute requirement, wherein, the surface topography of MEMS device is the important indicator in the device quality evaluation, directly has influence on the height of the quality and the usability of device.
At present, obtaining very big progress aspect the application white light interference technique measurement MEMS device surface pattern both at home and abroad.Wherein, the principle that white light interference technique is measured is: the spectroscope with miter angle is divided into two bundles with light source, a branch of conduct is with reference to light, another Shu Zuowei measures light, measuring light is interfered by testee reflection back and reference ray formation, after the CCD collection, obtain the three-dimensional appearance figure of testee through Flame Image Process; Without the contact measured device surface, need not to destroy the structure of device, can carry out large-scale topography measurement, have that range is big, noncontact, highly sensitive, not damaged, characteristics that precision is high.The product that existing white light interferometric equipment is produced with U.S. Zygo company, Britain TaylorHobson company, German Polytec company is the typical case the most, its longitudinal frame can reach the nm magnitude, although being subjected to the restriction of CCD, lateral resolution also can reach μ m magnitude, the performance brilliance, be widely used, can obtain high-resolution three-dimensional surface figure by analysis to white-light fringe.
And white light interference technique is measured and is extended to the infrared light scope by visible-range, for example: application number is disclosed " based on the microstructure appearance test method of infrared white light interference technique " in the Chinese patent application of " 200810054908.5 ", the micromechanism of this method of testing utilization MEMS device manufacturing process material one silicon in the infrared light scope is transparent relatively characteristic, with infrared light as measurement light source, the sidewall siliceous to be measured of infrared transmission deep groove structure, and on the interface of siliceous sidewall and lossless process employing material reflection and scattering take place, with the relevant superposition of reference beam, can obtain reflecting the interference fringe pattern of the surface profile of this deep trench sidewall, then, convert electric signal through optical lens to by ccd image sensor, handle the three-dimensional appearance figure that can obtain institute's depth measurement groove structure sidewall surfaces via Computer Analysis.But because the semiconductor material refractive index that the MEMS device is adopted is bigger, therefore, when measuring MEMS device microstructure pattern with the semiconductor material of infrared light interference technique transmission MEMS device, the optical path difference that causes in the time of need significantly adjusting reference mirror with compensation infrared transmission semiconductor material, so that the relevant superposition of measuring beam and reference beam, could form the light and dark interference fringe pattern that characterizes MEMS device surface topography to be measured, but adjust the reference mirror position significantly, what at first face is exactly operational issue, adjusting range is excessive not only not easy to operate, and be in course of adjustment, be difficult for determining to measure the relevant superposition point of light and reference ray, will inevitably cause bigger measuring error, make the actual pattern of the three-dimensional appearance figure that measures and the MEMS device microstructure of surveying have deviation, can't accurately embody the pattern situation of MEMS device microstructure, be unfavorable for the grade estimation of MEMS device, influence the following process quality and the usability of MEMS device.
Summary of the invention
The present invention provides a kind of MEMS device topography measuring method based on the infrared light interference technique in order to solve problems such as the operation that exists with existing infrared light interference technique measurement MEMS device architecture pattern is difficult for, measuring error is bigger.
The present invention adopts following technical scheme to realize: the MEMS device topography measuring method based on the infrared light interference technique, realize with the following step:
1), MEMS device to be measured is measured preceding preparation: on the basis of not damaging MEMS device to be measured surface topography to be measured, stop the lossless process of infrared transmitting on MEMS device to be measured surface to be measured; And after processing, place on the interferometer scanning platform, and the surface to be measured (carrying out the side of lossless process) that makes MEMS device to be measured is towards the interferometer scanning platform; The lossless process mode of described realization above-mentioned purpose has a lot, for those skilled in the art, can select different lossless process modes according to the structure of reality MEMS device to be measured.
2), using interferometer measures MEMS device to be measured:
A, with the infrared light light source as measurement light source, the infrared light that is sent by the infrared light light source becomes parallel beam after the optical lens adjustment, parallel beam is divided into along reference beam and edge that reference path is propagated by light-splitting device measures the measuring beam that light path is propagated, reference beam is through the optical lens refraction of reference path, former road is returned after the reference mirror direct reflection, measuring beam is through measuring the optical lens refraction of light path, behind the transmission MEMS device to be measured, the to be measured MEMS device to be measured surface of irradiation after lossless process, return by former road after the surface reflection to be measured, the position of horizontal adjustment reference mirror, the measuring beam that makes MEMS device to be measured surface reflection to be measured with through the reference beam of reference mirror direct reflection at the light-splitting device place relevant superposition, form the light and dark interference fringe pattern that characterizes MEMS device to be measured surface topography to be measured;
B, interference fringe pattern are after optical lens focuses on, image in ccd image sensor, be converted to electric signal by ccd image sensor, transfer to computing machine, signal is carried out the three-dimensional appearance figure that analyzing and processing gets the MEMS device surface of surveying by computer utility image reconstruction software;
When the application interferometer is measured MEMS device to be measured, before the optical lens of reference path, be provided with and the semiconductor wafer of MEMS device to be measured with material, through reference beam that light-splitting device is told behind the transmission semiconductor wafer, again through the refraction of the optical lens of reference path, reference mirror direct reflection, with the measuring beam of MEMS device to be measured surface reflection to be measured at the light-splitting device place relevant superposition.
Be the measurement effect of checking the method for the invention, select to carry out measuring surface form as the GaAs sample that Fig. 1 looked with two ledge structures.
Before the measurement, the one side that the GaAs sample is had step is carried out lossless process: for measuring smoothly, strengthen the GaAs sample surfaces measuring beam is reflected, the one side that has a step at the GaAs sample is plated the gold layer of the about 300nm of a layer thickness.Wherein, described GaAs sample uses commercial instrument Polytec MSA 400 to carry out non-transmission topography measurement, and (one side that the GaAs sample is had step is towards measuring light path, the golden laminar surface of measuring beam direct irradiation GaAs sample is measured), measurement result and is decided to be and subsequent authentication is measured gained measurement result normative reference relatively shown in Fig. 2,3.
Selection is that 1250nm, half-peak breadth are that the infrared light light source of 150nm is as measurement light source with centre wavelength, as shown in Figure 4, with the method for the invention described GaAs sample is carried out transmission compensation measuring surface form (promptly placing and the GaAs wafer of GaAs sample with material) before the lens of reference path, measurement result is shown in Fig. 5,6; Demarcate and be the A mode.
As shown in Figure 7, be different from the method for the invention, do not place the GaAs wafer before the lens of reference path, described GaAs sample is carried out the non-compensation measuring surface form of transmission, measurement result is shown in Fig. 8,9; Demarcate and be the B mode.
In addition, as shown in figure 10, be different from above-mentioned measuring method, with existing white light interferometric unanimity, the one side that the GaAs sample is had step places on the interferometer scanning platform towards the lens of measuring light path, the golden laminar surface of measuring beam direct irradiation GaAs sample is measured, and measurement result is shown in Figure 11,12.Demarcate and be the C mode.
The comparative result of above-mentioned three kinds of measuring method measurement results and normative reference is as shown in the table:
Table 1
Pass-through mode A (measuring method of the present invention) and mode C test gained error less (less than 1.3%) can satisfy the test of general three dimension pattern fully as can be seen from Table 1; And pass-through mode B tests gained error big (greater than 10%), can fully show: application and MEMS device to be measured carry out the transmission compensation with the semiconductor wafer of material to reference beam, the optical path difference that causes in the time of can compensating measure light beam transmission MEMS device semiconductor material, and reduce the system testing error that causes owing to transmission greatly, on this basis, only need fine setting reference mirror position, even do not carry out the adjustment of reference mirror position, can be accurately, determine the relevant superposition point of measuring beam and reference beam apace, form the light and dark interference fringe pattern that characterizes MEMS device surface topography to be measured, and then improve measuring accuracy greatly to MEMS device surface pattern, accurately embody the pattern situation of MEMS device microstructure.
Compared with prior art, the present invention still utilizes the good transmission performance of infrared light to semiconductor material, will have white light interference technique now and be generalized to infrared band from visible light wave range, uses the measurement of infrared light interference technique realization to MEMS device architecture pattern; And when using the infrared light interference technique and realize measurement to MEMS device architecture pattern, before the lens of interferometer reference path, be provided with and the semiconductor wafer of MEMS device to be measured with material, realize the optical path difference compensation between reference beam and measuring beam, the fine setting that reference mirror only need be done in the normal range gets final product, adjust the mode (being above-mentioned B mode) of reference mirror position compensation optical path difference significantly than simple dependence, easier acquisition is interference fringe picture preferably, realizes the more measurement of high precision (reaching hundred nm magnitudes).
The method of the invention is reasonable, and is easy to operate, the measuring accuracy height, the energy high precision embodies the pattern situation of MEMS device microstructure, be beneficial to the grade estimation of MEMS device,, promote the raising of MEMS device quality and usability for improvement MEMS device manufacturing process, process provide foundation.Be applicable to the field such as the reconstruct of MEMS device inside pattern, the assessment of bonding sample bonded interface roughness, the detection of MEMS technology real-time online of based semiconductor material.
Description of drawings
Fig. 1 is the GaAs structures of samples synoptic diagram with two ledge structures;
The three-dimensional appearance figure of Fig. 2 for using 400 pairs of sample measurements shown in Figure 1 of commercial instrument Polytec MSA to obtain;
Fig. 3 is the sectional view of three-dimensional appearance figure shown in Figure 2;
Fig. 4 is the measuring principle figure of measuring method of the present invention (being the described measuring method of A mode);
The three-dimensional appearance figure of Fig. 5 for sample measurement shown in Figure 1 being obtained with measuring method of the present invention;
Fig. 6 is the sectional view of three-dimensional appearance figure shown in Figure 5;
Fig. 7 is the measuring principle figure of the described measuring method of B mode;
The three-dimensional appearance figure of Fig. 8 for sample measurement shown in Figure 1 being obtained with the described measuring method of B mode;
Fig. 9 is the sectional view of three-dimensional appearance figure shown in Figure 8;
Figure 10 is the measuring principle figure of the described measuring method of C mode;
The three-dimensional appearance figure of Figure 11 for sample measurement shown in Figure 1 being obtained with the described measuring method of C mode;
Figure 12 is the sectional view of three-dimensional appearance figure shown in Figure 11;
Figure 13 is the principle schematic of Linnik type optical interference structure;
Figure 14 is the principle schematic of Michelson type optical interference structure;
Among the figure: 1-infrared light light source; The 2-optical lens; The 3-light-splitting device; The 4-optical lens; The 5-reference mirror; The 6-optical lens; 7-MEMS device to be measured; The 8-optical lens; The 9-CCD imageing sensor; The 10-computing machine; The 11-semiconductor wafer; 12-gold layer.
Embodiment
MEMS device topography measuring method based on the infrared light interference technique, realize with the following step:
1), MEMS device 7 to be measured is measured preceding preparation: on the basis of not damaging MEMS device 7 surface topographies to be measured to be measured, stop the lossless process (for example gold layer of establishing in MEMS device to be measured surface to be measured plating the demonstration test in the summary of the invention 12) of infrared transmitting on MEMS device to be measured 7 surfaces to be measured; And after processing, place on the interferometer scanning platform, and the surface to be measured that makes MEMS device 7 to be measured is down towards the interferometer scanning platform;
2), use interferometer MEMS device to be measured measured: as shown in Figure 4,
A, with infrared light light source 1 as measurement light source, the infrared light that is sent by infrared light light source 1 becomes parallel beam after optical lens 2 is adjusted, parallel beam is divided into along reference beam and edge that reference path is propagated by light-splitting device 3 measures the measuring beam that light path is propagated, reference beam is through optical lens 4 refractions of reference path, former road is returned after reference mirror 5 direct reflections, optical lens 6 refractions of measuring beam through measuring light path, behind the transmission MEMS device 7 to be measured, the to be measured MEMS device 7 to be measured surfaces of irradiation after lossless process, return by former road after the surface reflection to be measured, the position of horizontal adjustment reference mirror 5, the measuring beam that makes MEMS device 7 surface reflections to be measured to be measured with through the reference beam of reference mirror 5 direct reflections at light-splitting device 3 places relevant superposition, form the light and dark interference fringe pattern that characterizes MEMS device 7 surface topographies to be measured to be measured;
B, interference fringe pattern are after optical lens 8 focuses on, image in ccd image sensor 9, be converted to electric signal by ccd image sensor 9, transfer to computing machine 10, rebuild software by computing machine 10 application images signal is carried out the three-dimensional appearance figure that analyzing and processing gets the MEMS device surface of surveying;
When the application interferometer is measured MEMS device 7 to be measured, before the optical lens 4 of reference path, be provided with and the semiconductor wafer 11 of MEMS device 7 to be measured with material, through reference beam that light-splitting device 3 is told behind transmission semiconductor wafer 11, again through optical lens 4 refraction, reference mirror 5 direct reflections of reference path, with the measuring beam of MEMS device 7 surface reflections to be measured to be measured at light-splitting device 3 places relevant superposition.
During concrete enforcement, measuring method of the present invention is except that realizing based on the interferometer that adopts Linnik type optical interference structure (as Fig. 4, shown in Figure 13), the interferometer that also is applicable to Michelson type optical interference structure (as shown in figure 14) is realized, as long as before the reference mirror 5 of reference path, be provided with and the semiconductor wafer 11 of MEMS device 7 to be measured with material, realize being beneficial to the range of application of expansion measuring method of the present invention easily; In addition, through verification experimental verification, the thickness of the semiconductor wafer of setting up before the reference path optical lens 4 11 and the measuring accuracy of measuring method of the present invention are irrelevant; The image reconstruction software of described computer utility is main according to the realization of programming voluntarily of existing white light VSI (vertical scanning) and PSI (phase shift interference) algorithm, and the establishment of described image reconstruction software is easy to realize for those skilled in the art, after the electrical signal conversion that computing machine will characterize the interference fringe pattern is gray-scale map, promptly use the infrared light VSI (vertical scanning) of programming voluntarily, PSI (phase shift interference) algorithm carries out analytical Calculation to signal and obtains three-dimensional appearance figure, in analytical Calculation, can take into full account of the influence of MEMS device semiconductor material refractive index to test result, by software compensation, and then further improved the measuring accuracy of measuring method of the present invention.
Claims (2)
1. MEMS device topography measuring method based on the infrared light interference technique, realize with the following step:
1), MEMS device to be measured (7) is measured preceding preparation: on the basis of not damaging MEMS device to be measured (7) surface topography to be measured, stop the lossless process of infrared transmitting on MEMS device to be measured (7) surface to be measured; And after processing, place on the interferometer scanning platform, and the surface to be measured that makes MEMS device to be measured (7) is towards the interferometer scanning platform;
2), using interferometer measures MEMS device to be measured:
A, with infrared light light source (1) as measurement light source, the infrared light that is sent by infrared light light source (1) becomes parallel beam after optical lens (2) is adjusted, parallel beam is divided into along reference beam and edge that reference path is propagated by light-splitting device (3) measures the measuring beam that light path is propagated, reference beam is through optical lens (4) refraction of reference path, former road is returned after reference mirror (5) direct reflection, measuring beam is through measuring optical lens (6) refraction of light path, behind the transmission MEMS device to be measured (7), to be measured MEMS device (7) the to be measured surface of irradiation after lossless process, return by former road after the surface reflection to be measured, the position of horizontal adjustment reference mirror (5), make the measuring beam of MEMS device to be measured (7) surface reflection to be measured locate relevant superposition at light-splitting device (3), form the light and dark interference fringe pattern that characterizes MEMS device to be measured (7) surface topography to be measured with reference beam through reference mirror (5) direct reflection;
B, interference fringe pattern are after optical lens (8) focuses on, image in ccd image sensor (9), be converted to electric signal by ccd image sensor (9), transfer to computing machine (10), rebuild software by computing machine (10) application image signal is carried out the three-dimensional appearance figure that analyzing and processing gets the MEMS device surface of surveying;
It is characterized in that: using interferometer to MEMS device to be measured (7) when measuring, at the preceding setting of optical lens (4) of reference path and MEMS device to be measured (7) semiconductor wafer (11) with material, through reference beam that light-splitting device (3) is told behind transmission semiconductor wafer (11), through optical lens (4) refraction, reference mirror (5) direct reflection of reference path, locate relevant superposition at light-splitting device (3) again with the measuring beam of MEMS device to be measured (7) surface reflection to be measured.
2. the MEMS device topography measuring method based on the infrared light interference technique according to claim 1 is characterized in that: be that 1250nm, half-peak breadth are that the infrared light light source of 150nm is as measurement light source with centre wavelength.
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| CN106441152A (en) * | 2016-10-18 | 2017-02-22 | 淮阴师范学院 | Asymmetric optical interference measurement method and device |
| CN106705856A (en) * | 2015-07-31 | 2017-05-24 | 南京理工大学 | Near-infrared displacement sensing device based no broadband spectral domain microscopic interferometry and micro displacement measurement method thereof |
| CN111293052A (en) * | 2020-03-05 | 2020-06-16 | 长江存储科技有限责任公司 | Wafer detection method and detection equipment |
| CN113465534A (en) * | 2021-06-25 | 2021-10-01 | 浙江大学 | Micro-nano deep groove structure rapid measurement method based on white light interference |
| CN116878427A (en) * | 2023-07-26 | 2023-10-13 | 广东微容电子科技有限公司 | Interferometry method and device for surface roughness of printed diaphragm |
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