CN101800256A - Film system of thin film solar cell, thin film solar cell and method for manufacturing thin film solar cell - Google Patents
Film system of thin film solar cell, thin film solar cell and method for manufacturing thin film solar cell Download PDFInfo
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- CN101800256A CN101800256A CN201010122977A CN201010122977A CN101800256A CN 101800256 A CN101800256 A CN 101800256A CN 201010122977 A CN201010122977 A CN 201010122977A CN 201010122977 A CN201010122977 A CN 201010122977A CN 101800256 A CN101800256 A CN 101800256A
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Abstract
The invention discloses a film system of a thin film solar cell, which comprises a double-junction layer p-i-n/p-i-n consisting of an amorphous silicon p-i-n junction and a microcrystalline silicon p-i-n junction which are connected in series with each other, wherein a p-type microcrystalline silicon layer of the microcrystalline silicon p-i-n junction is arranged on an n-type amorphous silicon layer of the amorphous silicon p-i-n junction; a p-type amorphous silicon layer of the amorphous silicon p-i-n junction is provided with a heavily-doped P+ layer; the n-type microcrystalline silicon layer of the microcrystalline silicon p-i-n junction is provided with a heavily-doped N+ layer; and the structure of the film system is P+/p-i-n/p-i-n/N+. The film system of the thin film solar cell has high photoelectric conversion efficiency and low cost; and the photoelectric conversion efficiency of the thin film solar cell manufactured by a method of the invention reaches 10 percent.
Description
Technical field
The present invention relates to a kind of thin film solar cell film system and thin film solar cell, also relate to a kind of manufacture method of thin film solar cell, belong to photovoltaic solar battery technology field.
Background technology
Along with worldwide nervous and short of the energy, people improve day by day to the attention degree that taps a new source of energy, and especially pay attention to day by day with the development and utilization of the green energy resource headed by the solar energy.Solar energy is subjected to extensive concern and favor with special advantages such as its pollution-free, no region restriction and round-the-clock utilization.
Based on maturity, reliability, low cost, be easy to be used in combination with other film photovoltaic materials, and have can matching design, preparation method's progress and the characteristic of improved process technology, the film photovoltaic module technology of preparing of thin film solar cell becomes the most potential a kind of solar cell industry.But the present amorphous silicon membrane-low problem of microcrystalline silicon film photovoltaic module ubiquity photoelectric conversion rate still about 8.5%, has restricted the application and the development of thin film solar cell so far.Wherein, the film structure of thin film solar cell is one of key factor that influences film photovoltaic module photoelectric conversion rate.The spectral absorption center that microcrystalline silicon film absorbs sunlight is 1.75ev, and the spectral absorption center that microcrystal silicon absorbs sunlight is 1.0ev, if the two series connection then has more wide spectral absorption space, therefore obtains higher photovoltaic conversion efficiency.Yet hydrogen suspension key and tail band can rank in the i of amorphous silicon layer with the i layer of microcrystal silicon in, cause the internal electric field of distortion, the drift velocity of carrier is reduced.
Summary of the invention
The purpose of this invention is to provide a kind of thin film solar cell film is, the present invention also aims to provide a kind of thin film solar cell, and simultaneously, the present invention also provides a kind of manufacture method of thin film solar cell.
In order to realize above purpose, the technical solution adopted in the present invention is:
A kind of thin film solar cell film is, this film system comprises a binode layer p-i-n/p-i-n who is provided with by amorphous silicon p-i-n knot and the series connection of microcrystal silicon p-i-n knot, the p type microcrystal silicon layer of described microcrystal silicon p-i-n knot is arranged on the n type amorphous silicon layer of described amorphous silicon p-i-n knot, and the p type amorphous silicon layer of described amorphous silicon p-i-n knot is provided with heavily doped P
+The type amorphous silicon layer, the n type microcrystal silicon layer of described microcrystal silicon p-i-n knot is provided with heavily doped N
+Type microcrystal silicon layer, this film structure are P
+/ p-i-n/p-i-n/N
+
Further, be provided with resilient coating between the p type microcrystal silicon layer that the n type amorphous silicon layer and the described microcrystal silicon p-i-n of described amorphous silicon p-i-n knot tie, described resilient coating is a transparency conducting layer.
Wherein, described P
+The concentration of the alloy of layer and the concentration ratio of silicon atom are (10～100): 100000, and described N
+The concentration of the alloy of layer and the concentration ratio of silicon atom are (5～100): 100000.
Described P
+The thickness of layer is 1～10nm, described N
+The thickness of layer is 2～15nm.The thickness ratio of the p layer of described amorphous silicon p-i-n knot, i layer, n layer is 2: (6～10): 3, and wherein the thickness of p type amorphous silicon layer is 15～30nm.The thickness ratio of the p layer of described microcrystal silicon p-i-n knot, i layer, n layer is 2: (6～10): 3, and wherein the thickness of p type microcrystal silicon layer is 150～300nm.The gross thickness of described amorphous silicon p-i-n knot is 1 with the ratio of the gross thickness of described microcrystal silicon p-i-n knot: (8～15).
A kind of thin film solar cell, comprise substrate, be arranged on transparency conducting layer, the back electrode on the substrate and be arranged on transparency conducting layer and back electrode between solar cell film system, described film is to comprise a binode layer p-i-n/p-i-n who is provided with by amorphous silicon p-i-n knot and the series connection of microcrystal silicon p-i-n knot, the p type microcrystal silicon layer of described microcrystal silicon p-i-n knot is arranged on the n type amorphous silicon layer of described amorphous silicon p-i-n knot, and the p type amorphous silicon layer of described amorphous silicon p-i-n knot is provided with heavily doped P
+Layer, the n type microcrystal silicon layer of described microcrystal silicon p-i-n knot is provided with heavily doped N
+Layer, this film structure is P
+/ p-i-n/p-i-n/N
+
Further, be provided with resilient coating between the p type microcrystal silicon layer that the n type amorphous silicon layer and the described microcrystal silicon p-i-n of described amorphous silicon p-i-n knot tie, described resilient coating is a transparency conducting layer.
A kind of manufacture method of thin film solar cell may further comprise the steps:
(1) substrate is put into the vacuum splashing and plating chamber, be coated with nesa coating on a face of substrate, promptly tco layer is used the laser cutting tco layer then;
(2) on tco layer, be coated with P
+The type amorphous silicon layer is afterwards at P
+Be coated with p type amorphous silicon layer, i type amorphous silicon layer, n type amorphous silicon layer on the layer successively, form amorphous silicon p-i-n knot, on the n type amorphous silicon layer of amorphous silicon p-i-n knot, be coated with p type microcrystal silicon layer, i type microcrystal silicon layer, n type microcrystal silicon layer successively then, make microcrystal silicon p-i-n knot, on the n type microcrystal silicon layer of microcrystal silicon p-i-n knot, be coated with N
+The type microcrystal silicon layer;
(3) with the whole P of laser cutting
+/ p-i-n/p-i-n/N
+Series of strata are again in N
+Be coated with ZnO layer and Al layer on the layer successively, i.e. dorsum electrode layer is afterwards again after the complete membrane silicon layer and dorsum electrode layer of laser cutting, to glue together film (EVA) and place on the Al layer, on the gummed film, add back-panel glass again, be solidified into one through the lamination of heating afterwards, encapsulation makes thin film solar cell.
Distribution about pure amorphous area carrier, there are five sections of branch to say, first district is occupied by the electric charge on tail band energy rank, it then is the carrier district, space that constitutes by nominal price suspension key, being one then almost is the neutral zone of waiting electric field, then being an electronegative suspension keypad again, is another conduction tail zone of being made up of the space carrier at last.This analytical model shows, has a kind of electric field of distortion in pure amorphous silicon i layer, and this electric field has limited the drift of carrier stream.Microcrystalline silicon film is to be that the silicon metal crystal of hundreds of micron is distributed in the uniform amorphous silicon membrane by size, what cause so the suspension key is arranged can be to form positive and negative carrier with defective to combine the center, therefore, make the distortion of p-i-n type solar cell internal electric field, the electric field of distortion can not provide the photoelectricity carrier drift velocity in the enough i layer and the time of existence, makes its photoelectric conversion efficiency very low.
The heavily doped P that in thin film solar cell film of the present invention is, is provided with
+Type amorphous silicon layer and N
+The type microcrystal silicon layer has influenced the CHARGE DISTRIBUTION in the i layer, has reduced the distortion of i layer internal electric field, has improved the drift velocity of carrier stream.With a heavy doping P
+Layer connects with the TCO glass of n type, forms a good buffering area, and the nominal price electricity hole that not only helps to be produced by photon enters interface smoothly, can slow down the decay of photovoltaic conversion efficiency simultaneously.P
+Layer can reduce free carrier with combining of p layer, and therefore the trap effect in the electric hole of nominal price especially promotes the extendable room of i layer thickness in the manufacture process, simultaneously, the colourity of solar cell also so and improve, photoelectric conversion efficiency improves greatly.In addition, the reduction of i layer internal electric field torsion resistance and increase with the adaptability of thickness can help to reduce the production cost of battery.
Thin film solar cell film system's employing amorphous silicon of the present invention and the overlapping structure of microcrystal silicon, its advantage is, amorphous silicon p-i-n knot can absorb low light level energy, being positioned at microcrystal silicon p-i-n knot that amorphous silicon p-i-n forges layer can absorb with 1.7EV and 1.0EV to be the solar spectrum energy at center, to have improved the utilance of light greatly.Simultaneously, microcrystal silicon p-i-n knot has the characteristics of low decay transfer ratio.Heavily doped P
+Layer and N
+Layer has the effect of lowering electrified body plyability and anelasticity, has increased electric hole and the drift velocity of electronics in semiconductor because of the torsion resistance that lowers electric field in the i layer simultaneously.
The film of thin film solar cell of the present invention is the photoelectric conversion rate height, and cost is low, and the photoelectric conversion rate of the thin film solar cell that the present invention makes reaches 10%.
Description of drawings
Fig. 1 is the structural representation of the thin film solar cell film system of the embodiment of the invention 1;
Fig. 2 is the structural representation of the thin film solar cell film system of the embodiment of the invention 2;
Fig. 3 is the structural representation of the thin film solar cell of the embodiment of the invention 3;
Fig. 4 is the structural representation of the thin film solar cell of the embodiment of the invention 4.
Embodiment
Embodiment 1
See shown in Figure 1, a kind of thin film solar cell film system, this film system is by forming with the lower part:
Heavily doped P
+Type amorphous silicon layer 1;
At heavily doped P
+The amorphous silicon p-i-n knot that is provided with on one of them face of layer 1, this amorphous silicon p-i-n knot comprises p type amorphous silicon layer 2, i type amorphous silicon layer 3, n type amorphous silicon layer 4;
The microcrystal silicon p-i-n that ties setting at amorphous silicon p-i-n ties, and this microcrystal silicon p-i-n knot comprises p type microcrystal silicon layer 5, i type microcrystal silicon layer 6, n type microcrystal silicon layer 7;
The heavily doped N that on the n type microcrystal silicon layer 7 of microcrystal silicon p-i-n knot, is provided with
+Type microcrystal silicon layer 8.
See shown in Figure 2, a kind of thin film solar cell film system, this film system is by forming with the lower part:
Heavily doped P
+Type amorphous silicon layer 1;
At heavily doped P
+The amorphous silicon p-i-n knot that is provided with on one of them face of layer 1, this amorphous silicon p-i-n knot comprises p type amorphous silicon layer 2, i type amorphous silicon layer 3, n type amorphous silicon layer 4;
The resilient coating 15 that on the n type amorphous silicon layer of amorphous silicon p-i-n knot, is provided with, this resilient coating is a transparency conducting layer;
The microcrystal silicon p-i-n knot that on resilient coating 15, is provided with, this microcrystal silicon p-i-n knot comprises p type microcrystal silicon layer 5, i type microcrystal silicon layer 6, n type microcrystal silicon layer 7;
The heavily doped N that on the n type microcrystal silicon layer 7 of microcrystal silicon p-i-n knot, is provided with
+Type microcrystal silicon layer 8.
Increase resilient coating 15 and can increase the refraction number of times of light, thereby improved the assimilation ratio of light in amorphous silicon film solar battery film system, improved the utilance of light.
See shown in Figure 3, a kind of thin film solar cell, the film photovoltaic module of this thin film solar cell is: along the incident light direction, be glass substrate 9 successively, be arranged on nesa coating (TCO) 10 on the glass substrate 9, be arranged on the P on the nesa coating (TCO) 10
+Type amorphous silicon layer 1, be arranged on P
+The amorphous silicon p-i-n knot by p layer 2, i layer 3, n layer 4 formed of layer on 1, be arranged on amorphous silicon p-i-n knot n layer 4 on the microcrystal silicon p-i-n that forms by p layer 5, i layer 6, n layer 7 tie, be arranged on N on the n layer 7 that microcrystal silicon p-i-n ties
+Type microcrystal silicon layer 8, be arranged on N
+The ZnO layer 11 of layer on 8, be arranged on Al layer 12 on the ZnO layer 11, be arranged on gummed film (EVA) layer 13 on the Al layer 12, be arranged on the back-panel glass 14 on gummed film (EVA) layer 13,, make thin film solar cell through the lamination of heating, encapsulation.
See shown in Figure 4, a kind of thin film solar cell, the film photovoltaic module of this thin film solar cell is: along the incident light direction, be glass substrate 9 successively, be arranged on nesa coating (TCO) 10 on the glass substrate 9, be arranged on the P on the nesa coating (TCO) 10
+Type amorphous silicon layer 1, be arranged on P
+The amorphous silicon p-i-n knot by p layer 2, i layer 3, n layer 4 formed of layer on 1, be arranged on amorphous silicon p-i-n knot n layer 4 on resilient coating 15, be arranged on the microcrystal silicon p-i-n that forms by p layer 5, i layer 6, n layer 7 on the resilient coating 15 and tie, be arranged on N on the n layer 7 that microcrystal silicon p-i-n ties
+Type microcrystal silicon layer 8, be arranged on N
+The ZnO layer 11 of layer on 8, be arranged on Al layer 12 on the ZnO layer 11, be arranged on gummed film (EVA) layer 13 on the Al layer 12, be arranged on the back-panel glass 14 on gummed film (EVA) layer 13,, make thin film solar cell through the lamination of heating, encapsulation.
A kind of manufacture method of thin film solar cell may further comprise the steps:
(1) glass substrate is put into the vacuum splashing and plating chamber, be coated with nesa coating on a face of substrate, promptly tco layer is used the laser cutting tco layer then;
(2) put into ion afterwards and help the plating gas reaction chamber, be heated to 200 ℃, using plasma strengthens chemical vapour deposition technique (PECVD), uses the power supply of 13.56MHz, at first feeds SiH
4, B
2H
4And H
2Mist, make gas aggradation on tco layer, make P
+Amorphous silicon film layer, in this technical process, that use is TMB, its B
2H
6Content be 3%, among the PECVD, the content of TMB is 1%, so B
2H
6Be about about 0.1% of silane concentration, afterwards with SiH
4, B
2H
4And H
2Mist in B
2H
4Content reduce an order of magnitude, make gas aggradation in P
+On the amorphous silicon film layer, make the p amorphous silicon film layer, feed SiH afterwards
4And H
2Mist, on the p amorphous silicon film layer, be coated with the i amorphous silicon film layer, be coated with and feed SiH again after finishing
4, PH
3And H
2Mist, on the i amorphous silicon film layer, be coated with the n amorphous silicon film layer, promptly make amorphous silicon p-i-n knot, adopt the ion of high frequency to help plating evaporating method (VHF-PECVD) afterwards, supply frequency is 30～130MHz, on the n layer of amorphous silicon p-i-n knot, be coated with p microcrystal silicon rete, i microcrystal silicon rete, n microcrystal silicon rete successively, make microcrystal silicon p-i-n knot, afterwards with SiH
4, PH
3And H
2Mist in PH
3Content increase an order of magnitude, on the n microcrystal silicon rete of microcrystal silicon p-i-n knot, be coated with N
+The microcrystal silicon rete is coated with back the helping the plating gas reaction chamber from ion that finish and takes out;
(3) with whole amorphous silicon of laser cutting and microcrystal silicon rete, again in N
+Be coated with ZnO layer and Al layer on the microcrystal silicon rete successively, it is dorsum electrode layer, afterwards again through laser cutting complete membrane silicon layer and dorsum electrode layer, to glue together film (EVA) places on the Al layer, on the gummed film, add back-panel glass again, be solidified into one through the lamination of heating, encapsulation makes the overlapping thin film solar cell of amorphous silicon and microcrystal silicon.
Claims (13)
1. a thin film solar cell film is, it is characterized in that, this film system comprises a binode layer p-i-n/p-i-n who is provided with by amorphous silicon p-i-n knot and the series connection of microcrystal silicon p-i-n knot, the p type microcrystal silicon layer of described microcrystal silicon p-i-n knot is arranged on the n type amorphous silicon layer of described amorphous silicon p-i-n knot, and the p type amorphous silicon layer of described amorphous silicon p-i-n knot is provided with heavily doped P
+The type amorphous silicon layer, the n type microcrystal silicon layer of described microcrystal silicon p-i-n knot is provided with heavily doped N
+Type microcrystal silicon layer, this film structure are P
+/ p-i-n/p-i-n/N
+
2. thin film solar cell film according to claim 1 system is characterized in that, is provided with resilient coating between the p type microcrystal silicon layer of the n type amorphous silicon layer of described amorphous silicon p-i-n knot and described microcrystal silicon p-i-n knot.
3. thin film solar cell film according to claim 2 is, it is characterized in that described resilient coating is a transparency conducting layer.
4. thin film solar cell film according to claim 3 is, it is characterized in that described P
+The concentration of the alloy of type amorphous silicon layer and the concentration ratio of silicon atom are (10～100): 100000.
5. thin film solar cell film according to claim 3 is, it is characterized in that described N
+The concentration of the alloy of type microcrystal silicon layer and the concentration ratio of silicon atom are (5～100): 100000.
6. thin film solar cell film according to claim 1 is, it is characterized in that described P
+The thickness of type amorphous silicon layer is 1～10nm, described N
+The thickness of type microcrystal silicon layer is 2～15nm.
7. thin film solar cell film according to claim 1 is to it is characterized in that the thickness ratio of the p layer of described amorphous silicon p-i-n knot, i layer, n layer is 2: (6～10): 3.
8. thin film solar cell film according to claim 1 is to it is characterized in that the thickness ratio of the p layer of described microcrystal silicon p-i-n knot, i layer, n layer is 2: (6～10): 3.
9. thin film solar cell film according to claim 1 is to it is characterized in that the gross thickness of described amorphous silicon p-i-n knot is 1 with the ratio of the gross thickness of described microcrystal silicon p-i-n knot: (8～15).
10. thin film solar cell, comprise substrate, be arranged on transparency conducting layer, the back electrode on the substrate and be arranged on transparency conducting layer and back electrode between solar cell film system, it is characterized in that, described film is to comprise a binode layer p-i-n/p-i-n who is provided with by amorphous silicon p-i-n knot and the series connection of microcrystal silicon p-i-n knot, the p type microcrystal silicon layer of described microcrystal silicon p-i-n knot is arranged on the n type amorphous silicon layer of described amorphous silicon p-i-n knot, and the p type amorphous silicon layer of described amorphous silicon p-i-n knot is provided with heavily doped P
+The type amorphous silicon layer, the n type microcrystal silicon layer of described microcrystal silicon p-i-n knot is provided with heavily doped N
+Type microcrystal silicon layer, this film structure are P
+/ p-i-n/p-i-n/N
+
11. thin film solar cell according to claim 10 is characterized in that, is provided with resilient coating between the p type microcrystal silicon layer that the n type amorphous silicon layer and the described microcrystal silicon p-i-n of described amorphous silicon p-i-n knot tie.
12. thin film solar cell according to claim 11 is characterized in that, described resilient coating is a transparency conducting layer.
13. the manufacture method of the described thin film solar cell of claim 10 is characterized in that, may further comprise the steps:
(1) substrate is put into the vacuum splashing and plating chamber, be coated with nesa coating on a face of substrate, promptly tco layer is used the laser cutting tco layer then;
(2) on tco layer, be coated with P
+The type amorphous silicon layer is afterwards at P
+Be coated with p type amorphous silicon layer, i type amorphous silicon layer, n type amorphous silicon layer on the layer successively, form amorphous silicon p-i-n knot, on the n type amorphous silicon layer of amorphous silicon p-i-n knot, be coated with p type microcrystal silicon layer, i type microcrystal silicon layer, n type microcrystal silicon layer successively then, form microcrystal silicon p-i-n knot, on the n type microcrystal silicon layer of microcrystal silicon p-i-n knot, be coated with N
+The type microcrystal silicon layer;
(3) with the whole P of laser cutting
+/ p-i-n/p-i-n/N
+Series of strata are again in N
+Be coated with dorsum electrode layer on the layer, again behind laser cutting silicon layer and dorsum electrode layer, will glue together film and place on the dorsum electrode layer afterwards, on the gummed film, add back-panel glass again, be solidified into one through the lamination of heating afterwards, encapsulate, make thin film solar cell.
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931256A (en) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | Laser scribing method of transparent thin film solar cell |
| CN103022059A (en) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Technology for manufacturing triple-shroud-plate type silicon thin film solar battery by combining silane and silicon helide |
| CN103035757A (en) * | 2012-12-05 | 2013-04-10 | 保定风帆光伏能源有限公司 | Thin-film solar cell and p-type semiconductor and preparation method of p-shaped semiconductor |
| CN113295292A (en) * | 2021-05-26 | 2021-08-24 | 北京京东方技术开发有限公司 | Temperature sensor and device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851935A (en) * | 2006-03-23 | 2006-10-25 | 姜堰新金太阳能光伏制造有限公司 | Double-junction solar cell and manufacturing method thereof |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| CN101627478A (en) * | 2007-02-16 | 2010-01-13 | 三菱重工业株式会社 | Photoelectric converter and method for fabricating the same |
-
2010
- 2010-03-12 CN CN2010101229772A patent/CN101800256B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851935A (en) * | 2006-03-23 | 2006-10-25 | 姜堰新金太阳能光伏制造有限公司 | Double-junction solar cell and manufacturing method thereof |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| CN101627478A (en) * | 2007-02-16 | 2010-01-13 | 三菱重工业株式会社 | Photoelectric converter and method for fabricating the same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931256A (en) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | Laser scribing method of transparent thin film solar cell |
| CN103022059A (en) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Technology for manufacturing triple-shroud-plate type silicon thin film solar battery by combining silane and silicon helide |
| CN103035757A (en) * | 2012-12-05 | 2013-04-10 | 保定风帆光伏能源有限公司 | Thin-film solar cell and p-type semiconductor and preparation method of p-shaped semiconductor |
| CN103035757B (en) * | 2012-12-05 | 2016-04-13 | 保定风帆光伏能源有限公司 | The preparation method of a kind of thin-film solar cells and p-type semiconductor and p-type semiconductor |
| CN113295292A (en) * | 2021-05-26 | 2021-08-24 | 北京京东方技术开发有限公司 | Temperature sensor and device |
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| Publication number | Publication date |
|---|---|
| CN101800256B (en) | 2012-07-04 |
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