CN101800165B - Production method for channel capacitor - Google Patents
Production method for channel capacitor Download PDFInfo
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- CN101800165B CN101800165B CN2009100776702A CN200910077670A CN101800165B CN 101800165 B CN101800165 B CN 101800165B CN 2009100776702 A CN2009100776702 A CN 2009100776702A CN 200910077670 A CN200910077670 A CN 200910077670A CN 101800165 B CN101800165 B CN 101800165B
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- 239000003990 capacitor Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000000717 retained effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000615 nonconductor Substances 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
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- 238000013461 design Methods 0.000 description 2
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- 239000003292 glue Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100776702A CN101800165B (en) | 2009-02-11 | 2009-02-11 | Production method for channel capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100776702A CN101800165B (en) | 2009-02-11 | 2009-02-11 | Production method for channel capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101800165A CN101800165A (en) | 2010-08-11 |
CN101800165B true CN101800165B (en) | 2011-05-11 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2009100776702A Active CN101800165B (en) | 2009-02-11 | 2009-02-11 | Production method for channel capacitor |
Country Status (1)
Country | Link |
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CN (1) | CN101800165B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094068B (en) * | 2011-10-31 | 2015-11-18 | 成都锐华光电技术有限责任公司 | High density embedded capacitor and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330926A (en) * | 1990-11-14 | 1994-07-19 | Nec Corporation | Method of fabricating semiconductor device having a trenched cell capacitor |
CN1404126A (en) * | 2001-08-22 | 2003-03-19 | 矽统科技股份有限公司 | Embedding process of making metal capacitor and its product |
CN1536647A (en) * | 2003-04-08 | 2004-10-13 | 南亚科技股份有限公司 | Method for increasing capacitance of channel capacitor |
-
2009
- 2009-02-11 CN CN2009100776702A patent/CN101800165B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5330926A (en) * | 1990-11-14 | 1994-07-19 | Nec Corporation | Method of fabricating semiconductor device having a trenched cell capacitor |
CN1404126A (en) * | 2001-08-22 | 2003-03-19 | 矽统科技股份有限公司 | Embedding process of making metal capacitor and its product |
CN1536647A (en) * | 2003-04-08 | 2004-10-13 | 南亚科技股份有限公司 | Method for increasing capacitance of channel capacitor |
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Publication number | Publication date |
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CN101800165A (en) | 2010-08-11 |
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GR01 | Patent grant | ||
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Owner name: CHENGDU RHOPTICS OPTOELECTRONIC TECHNOLOGY CO., LT Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20140730 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 610041 CHENGDU, SICHUAN PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20140730 Address after: 610041, Sichuan, Chengdu hi tech Development Zone, 188 Rui Rui Road, No. 6, No. 2 building Patentee after: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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TR01 | Transfer of patent right |
Effective date of registration: 20210220 Address after: 214028 building D1, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, New District, Wuxi City, Jiangsu Province Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 2 / F, no.188-6, Zirui Avenue, Chengdu hi tech Development Zone, Sichuan 610041 Patentee before: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |
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