CN101794707A - Electron emitting-type light emitting device and encapsulating method thereof - Google Patents
Electron emitting-type light emitting device and encapsulating method thereof Download PDFInfo
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- CN101794707A CN101794707A CN200910009984A CN200910009984A CN101794707A CN 101794707 A CN101794707 A CN 101794707A CN 200910009984 A CN200910009984 A CN 200910009984A CN 200910009984 A CN200910009984 A CN 200910009984A CN 101794707 A CN101794707 A CN 101794707A
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Abstract
The invention relates to an electron emitting-type light emitting device and an encapsulating method thereof. The electronic emitting-type light emitting device comprises a first base plate, a second base plate, sealants, gas and fluorescent layers, wherein the first base plate is configured with a cathode, and the cathode has pattern design. The second base plate is arranged opposite to the first base plate, and the second base plate is configured with an anode. The sealants are arranged on the edges of the first base plate and the second base plate so as to assemble the first base plate and the second base plate. The gas is configured between the cathode and the anode, and gas discharge is utilized to induce the cathode to emit a plurality of electrons, wherein the air pressure of the environment in which the gas is 10torr-10<-3>torr. The fluorescent layers are configured on the moving paths of the electrons so as to generate impact action with the electrons to emit light.
Description
Technical field
The present invention relates to a kind of light-emitting component and method for packing thereof, and particularly relate to a kind of electron emitting-type light emitting device and method for packing thereof.
Background technology
The light-emitting device of volume production comprises glow discharge spot lamp and field emission light source at present.Glow discharge spot lamp for example is applied on plasma panel or the gaseous discharge lamp, mainly utilize the electric field between negative electrode and the anode, make the gas ionization that riddles in the discharge cavity, mode by gas conduction produces transition and sends ultraviolet light after making electronic impact gas, and just sends visible light after being positioned at the fluorescence coating absorption ultraviolet light of discharge cavity equally.Field emission light source is applied to for example nano carbon pipe field-emission display etc., mainly provide the environment of ultra high vacuum, and on negative electrode, make the electron transmitting terminal (electron emitter) of nano carbon material, help electronics to overcome the work function (workfunction) and the disengaging negative electrode of negative electrode in order to micro-structural with high-aspect-ratio in the electron transmitting terminal.In addition, on the anode that indium tin oxide (ITO) is made, be coated with fluorescence coating, overflow by the CNT (carbon nano-tube) of negative electrode to make electronics by the high electric field between negative electrode and the anode.So, electronics can be in vacuum environment the fluorescence coating on the impinge anode, to send visible light.
Yet above-mentioned two kinds of ray structures all have its shortcoming.For example, because of considering to be subjected to the attenuation problem after the UV-irradiation, therefore specific (special) requirements need be arranged for the material selection in the glow discharge spot lamp.In addition,, the luminous mechanism of gas discharge just can send visible light, so the loss of energy is bigger, if need to produce plasma, then more power consumption in the process because going through the twice process.On the other hand, uniform electron transmitting terminal need be grown up or be coated with to field emission light source on negative electrode, but large tracts of land is produced the technology prematurity still of this type of cathode construction at present, and run into the uniformity and the not good bottleneck of production yield of electron transmitting terminal.In addition, the negative electrode of field emission light source and the spacing of anode need be controlled accurately, and the encapsulation difficulty of ultra high vacuum degree also increases the cost of making relatively.
In addition, in the design of light-emitting device, slimming and luminenscence homogenization also are the emphasis of present light-emitting device in research and development.
Summary of the invention
The invention provides a kind of electron emitting-type light emitting device, it can send uniform light, and can satisfy the requirement of slimming.
The present invention provides a kind of method for packing of electron emitting-type light emitting device in addition, and it can make things convenient for and fast gas be fed.
The present invention proposes a kind of electron emitting-type light emitting device, and it comprises first substrate, second substrate, gas, fluid sealant and fluorescence coating.Dispose negative electrode on first substrate, and described negative electrode has design.Second substrate is positioned at the subtend of first substrate, and disposes anode on second substrate.Fluid sealant is positioned at the edge of first substrate and second substrate, so that first substrate and second substrate in batch are fitted together.Gas configuration utilizes gas discharge to send a plurality of electronics in order to induce negative electrode between negative electrode and anode, wherein the air pressure of the existing environment of gas between 10 Bristols (torr) to 10
-3Bristol (torr).Fluorescence coating is disposed on the movement of electrons path, to emit beam with the electronic impact effect.
In an embodiment of the present invention, above-mentioned negative electrode comprises conductive layer and is positioned at a plurality of conductive patterns on the conductive layer surface.
In an embodiment of the present invention, the first above-mentioned substrate has a plurality of dimpled grains, and is coated with conformal conductive layer on the surface of first substrate to constitute negative electrode.
In an embodiment of the present invention, be distributed with a plurality of first separation materials in the above-mentioned fluid sealant.
In an embodiment of the present invention, above-mentioned electron emitting-type light emitting device also comprises a plurality of second separation materials, and it is distributed between negative electrode and the anode.
In an embodiment of the present invention, above-mentioned first substrate and second substrate are plane or curved surface.
In an embodiment of the present invention, above-mentioned fluorescence coating is positioned at anode surface.
In an embodiment of the present invention, the material of above-mentioned anode comprise transparent conductive material (TransparentConductive Oxide, TCO).
In an embodiment of the present invention, the material of above-mentioned male or female comprises metal.
In an embodiment of the present invention, above-mentioned electron emitting-type light emitting device also comprises the induced discharge structure, and it is disposed at anode and negative electrode at least on one of them.
In an embodiment of the present invention, above-mentioned induced discharge structure comprises metal material, CNT (carbon nano-tube) (carbon nanotube), nano-sized carbon wall (carbon nanowall), nanoaperture carbon material (carbonnanoporous), pillar shaped ZnO (ZnO), zinc oxide (ZnO) material etc.
In an embodiment of the present invention, above-mentioned electron emitting-type light emitting device also comprises secondary electron source material layer (secondary electron source material layer), is disposed on the negative electrode.
In an embodiment of the present invention, the material of above-mentioned secondary electron source material layer comprises magnesium oxide (MgO), silicon dioxide (SiO2), terbium sesquioxide (Tb
2O
3), lanthanum sesquioxide (La
2O
3) or ceria (CeO
2).
In an embodiment of the present invention, above-mentioned gas comprises inert gas, hydrogen, carbon dioxide, oxygen or air.
The present invention proposes a kind of method for packing of electron emitting-type light emitting device in addition.The method at first provides electron emitting-type light emitting device, and it comprises first substrate and second substrate, and has been formed with negative electrode on first substrate, has been formed with anode on second substrate, and anode and negative electrode have been formed with fluorescence coating on one of them at least.Between first substrate and second substrate, form fluid sealant, and fluid sealant has opening.Then, install breather pipe at the opening of fluid sealant, and breather pipe is connected with pipeline, wherein pipeline is connected with air extractor and with the blanketing gas device.Afterwards, with the electron emitting-type light emitting device heating, and the unlatching air extractor is extracted the gas in the electron emitting-type light emitting device out.Afterwards, close air extractor, and open the blanketing gas device, so that gas is filled in the electron emitting-type light emitting device.Blow breather pipe at last, to seal up the opening of fluid sealant.
In an embodiment of the present invention, above-mentioned electron emitting-type light emitting device is heated to 300～400 degree Celsius.
In an embodiment of the present invention, the negative electrode on above-mentioned first substrate is the negative electrode with design.
In an embodiment of the present invention, above-mentioned first substrate and second substrate are plane or curved surface.
In an embodiment of the present invention, be distributed with a plurality of separation materials in the above-mentioned fluid sealant.
Based on above-mentioned, because the negative electrode of electron emitting-type light emitting device of the present invention has design of patterns, therefore can disperse the electric field edge effect between two electrodes, and then increase the luminous uniformity of light-emitting device, and can reduce the integral thickness of electron emitting-type light emitting device.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 is the generalized section of electron emitting-type light emitting device according to an embodiment of the invention.
Fig. 2 A and Fig. 2 B are the generalized sections of the negative electrode in the electron emitting-type light emitting device according to an embodiment of the invention.
Fig. 3 to Fig. 6 is the generalized section according to the electron emitting-type light emitting device of several embodiment of the present invention.
Fig. 7 and Fig. 8 are the generalized sections of curved face type electron emitting-type light emitting device according to an embodiment of the invention.
Fig. 9 A to Fig. 9 C is the schematic diagram of the method for packing of electron emitting-type light emitting device according to an embodiment of the invention.
Description of reference numerals
202: electronics
202 ': secondary electron
204: ion
208: the second substrates
210: anode
218: the first substrates
218a: dimpled grain
220: negative electrode
220a: conductive layer
220b: conductive pattern
230: gas
240: fluorescence coating
222: secondary electron source material layer
252,254: the induced discharge structure
250: fluid sealant
250a, 230a: separation material
251: opening
302: heater
304: breather pipe
306: air extractor
308: the blanketing gas device
310,312: valve
320: pipeline
Embodiment
Electron emitting-type light emitting device proposed by the invention has the advantage of traditional glow discharge spot lamp and field emission light source concurrently, and has overcome the shortcoming of these two kinds of traditional ray structures.In more detail, electron emitting-type light emitting device of the present invention need not form electron transmitting terminal, but utilizes thin gas discharge that electronics is derived easily by negative electrode, and electronics is directly emitted beam with the reaction of bump fluorescence coating.Compared to known glow discharge spot lamp, the amount of the gas of being filled in the electron emitting-type light emitting device of the present invention only needs and electronics can be got final product by the negative electrode derivation, and be not to utilize the UV-irradiation fluorescence coating to produce light, need do not worry that therefore the interior material of element is by the attenuation problem of UV-irradiation.We learn by experiment and theoretical validation, and the gas in the electron emitting-type light emitting device of the present invention is comparatively thin, so the mean free path of electronics can reach about 5mm or more than the 5mm.In other words, most electronics just can directly strike fluorescence coating before the molecule of bump gas, and emits beam.In addition, electron emitting-type light emitting device of the present invention does not need to produce light via the twice process, so luminous efficiency is higher, can reduce energy loss yet.
In addition, fill thin gas in the electron emitting-type light emitting device of the present invention, therefore do not need ultra high vacuum degree environment, the difficulty that is run in the time of can avoiding carrying out the encapsulation of ultra high vacuum degree.In addition, know that electron emitting-type light emitting device of the present invention can make start voltage (turnon voltage) reduce to about 0.4V/ μ m, far below the start voltage value of general field emission light source up to 1～3V/ μ m by the help of gas via experiment.Moreover, according to the Child-Langmuir equation, the actual related data substitution of electron emitting-type light emitting device of the present invention is calculated, the cathode dark space distribution that can draw electron emitting-type light emitting device of the present invention is between 10～25 centimetres (cm), much larger than the spacing of anode and negative electrode.In other words, between anode and negative electrode, can produce the gas of plasmoid hardly, therefore can determine that electron emitting-type light emitting device of the present invention is not to utilize plasma mechanism luminous, but the mode of utilizing gas to lead discharge derives the electronics of negative electrode, again by electronics directly and fluorescence coating effect and luminous.
Please refer to Fig. 2, it illustrates the generalized section of electron emitting-type light emitting device of the present invention.As shown in Figure 2, electron emitting-type light emitting device 200 mainly comprises first substrate 218, second substrate 208, fluid sealant 250, gas 230 and fluorescence coating 240, wherein has negative electrode 220 on first substrate 218, and has anode 210 on second substrate 208.
In general, can produce the electric force lines distribution and the electric field of higher density between the edge of two parallel-plate electrodes, it is called the edge effect (edge effect) of electric field.And when two distance between electrodes were approaching more, the electric field edge effect will more seriously make discharge inhomogeneous, just causes the situation of non-uniform light.If light-emitting device is carried out the problem that thinning certainly will consider that edge effect brings.Therefore, the present invention does the pattern design at the negative electrode of electron emitting-type light emitting device especially, to disperse edge effect.In other words, the present invention is layout on negative electrode, because the edge of the pattern of each negative electrode also has edge effect, therefore can disperse the electric field edge effect that produced, makes the electric field edge effect no longer concentrate on four edges of light-emitting device.And can be embodiment shown in Fig. 2 A or Fig. 2 B in the Cathode Design method of patterning.
Please earlier with reference to Fig. 2 A, in this embodiment, the method that makes negative electrode have design is to form conductive layer 220a earlier on first substrate 218, and afterwards again in the lip-deep a plurality of conductive pattern 220b of conductive layer 220a, thereby the surface of negative electrode 220 promptly has the pattern that height rises and falls.The method that forms conductive pattern 220b for example is to carry out the deposition program earlier to carry out etching program again and form, or directly carries out the deposition program with mask and form.Conductive pattern 220b can be strip, bulk, island form and can have any shape.The material of conductive layer 220a and conductive pattern 220b for example is transparent conductive material or metal, and both materials can be identical or inequality.
In another embodiment, make negative electrode 20 have the method for design shown in Fig. 2 B.Form dimpled grain 218a on the surface of first substrate 218 earlier, form conformal conductive layer 220 in the surface of first substrate 218 more afterwards, have the negative electrode 220 of design with formation.And the method that forms pattern 218a on the surface of first substrate 218 for example is with the ultrasonic waves procedure first substrate 217 to be carved dimpled grain.Similarly, the dimpled grain 218a that is carved on first substrate 217 can be the dimpled grain of strip, bulk or point format and can be arbitrary shape.
Please return Fig. 1, electron emitting-type light emitting device also comprises fluorescence coating 240, fluid sealant 250 and gas 230 except above-mentioned negative electrode 220 and anode 210.
What deserves to be mentioned is that because the present invention has pattern to disperse the electric field edge effect between two electrodes in negative electrode 220 designs, it can also reach the purpose of thinning light-emitting device except can making luminous improving uniformity.More specifically, because the present invention can make the electric field edge effect between two electrodes disperse, thereby the distance between negative electrode and the anode is dwindled the situation that also can not cause non-uniform light.Therefore, electron emitting-type light emitting device of the present invention need not use the glass frame, and can directly use fluid sealant 250 that two substrates 218,208 is fitted together, and then the electron emitting-type light emitting device integral thickness is significantly reduced.
Except the embodiment that Fig. 1 illustrated, the present invention can also form the material that is easy to generate electronics, in order to extra electron source to be provided in order to improve luminous efficiency on negative electrode.The electron emitting-type light emitting device that Fig. 2 illustrated is similar to the light-emitting device of Fig. 1, and difference is also to comprise on its negative electrode 220 and is formed with secondary electron source material layer (secondary electron source material layer) 222.The material of this secondary electron source material layer 222 can be magnesium oxide (MgO), terbium sesquioxide (Tb
2O
3), lanthanum sesquioxide (La
2O
3), aluminium oxide (Al
2O
3) or ceria (CeO
2).Because gas 230 can produce free ions 204, and ion 204 is positively charged, can move towards negative electrode 220 away from anode 210, therefore when the secondary electron source material layer 222 on the ion 204 bump negative electrodes 220, just can produce extra secondary electron 202 '.More electronics (comprising original electronics 202 and secondary electron 202 ') and fluorescence coating 240 effects just help to increase luminous efficiency.It should be noted that this secondary electron source material layer 222 not only helps to produce secondary electron, can also protect negative electrode 220 to avoid being subjected to the excessive bombardment of ion 204.
In addition, the present invention can also be chosen in male or female one of them or on anode and negative electrode, form simultaneously the structure of the electron transmitting terminal of similar field emission light source, the operating voltage in order on the reduction electrode more is easy to generate electronics.Fig. 4～6 promptly illustrate the multiple electron emitting-type light emitting device with induced discharge structure of the present invention respectively, wherein represent similar member with identical label, and can repeat specification for these members.
The structural similarity of electron emitting-type light emitting device shown in Figure 4 and the light-emitting device of Fig. 1, difference is to be formed with induced discharge structure 252 on its negative electrode 220, and it for example is the micro-structural that metal material, CNT (carbon nano-tube) (carbon nanotube), nano-sized carbon wall (carbon nanowall), nanoaperture carbon material (carbonnanoporous), pillar shaped ZnO (ZnO), zinc oxide (ZnO) material etc. are constituted.In addition, gas 230 is between anode 210 and negative electrode 220, and fluorescence coating 240 is disposed at anode 210 surfaces.Can reduce operating voltage between anode 210 and the negative electrode 220 by induced discharge structure 252, more be easy to generate electronics 202.Electronics 202 and fluorescence coating 240 effects just can produce light.
Electron emitting-type light emitting device that Fig. 5 illustrated and the person of illustrating of Fig. 4 institute are similar, than the evident difference place is to change configuration induced discharge structure 254 on anode 210 into, and this induced discharge structure 254 is as aforementioned, can be the micro-structural that metal material, CNT (carbon nano-tube) (carbon nanotube), nano-sized carbon wall (carbon nanowall), nanoaperture carbon material (carbon nanoporous), pillar shaped ZnO (ZnO), zinc oxide (ZnO) material etc. are constituted.In addition, 240 of fluorescence coatings are to be disposed on the induced discharge structure 254.
Fig. 6 illustrates a kind of electron emitting-type light emitting device that has induced discharge structure 254 and 252 concurrently, wherein induced discharge structure 254 is disposed on the anode 210, fluorescence coating 240 is disposed on the induced discharge structure 254, and induced discharge structure 252 is disposed on the negative electrode 220.230 of gases are between anode 210 and negative electrode 220.
Above-mentioned multiple electron emitting-type light emitting device with induced discharge structure 252 and 254 can also be integrated the design of the secondary electron source material layer 222 that illustrates as Fig. 2, and on negative electrode 220, form secondary electron source material layer, if be formed with induced discharge structure 254 on the negative electrode 220, then can make secondary electron source material layer cover induced discharge structure 254.So, not only can reduce the operating voltage between anode 210 and the negative electrode 220, make the generation of electronics 202 more easy, also can increase the quantity of electronics 202, improve luminous efficiency by secondary electron source material layer.
The described electron emitting-type light emitting device of the various embodiments described above is all the light-emitting device of plane form, so the invention is not restricted to this.In other embodiment, electron emitting-type light emitting device can also be the curved surface form, as Fig. 7 and shown in Figure 8.In the electron emitting-type light emitting device of Fig. 7 and Fig. 8, only show first substrate 218, second substrate 208 and fluid sealant 250 and omit the rete that illustrates on the two substrates 218,208 to be easy to explanation.In fact, be formed with the as above described negative electrode of each embodiment, anode and fluorescence coating on first substrate 218, second substrate 208, in other embodiment, also had induced discharge structure and/or secondary electron source material layer.In Fig. 7 and Fig. 8, first substrate 218 and second substrate 208 are the on-plane surface substrate, but have the substrate of curvature.Thereby the follow-up rete that is formed on first substrate 218 and second substrate 208 will same flexibility bending along substrate.Therefore, at last two substrates is fitted together the electron emitting-type light emitting device that can form the curved surface pattern afterwards.
Fig. 9 A to Fig. 9 C is the schematic diagram of the method for packing of electron emitting-type light emitting device according to an embodiment of the invention.Please refer to Fig. 9 A, electron emitting-type light emitting device at first is provided, it comprises first substrate 218 and second substrate 208.For convenience of description, Fig. 9 A and Fig. 9 B only show first substrate 218 and second substrate 208 and omit the rete that illustrates on the two substrates 218,208.In fact, be formed with the as above described negative electrode of each embodiment, anode and fluorescence coating on first substrate 218, second substrate 208, in other embodiment, also had induced discharge structure and/or secondary electron source material layer or the like.
Then, between first substrate 218 and second substrate 208, form fluid sealant 250, and fluid sealant 250 has opening 251.Described as previous embodiment, also can include separation material in the fluid sealant 250, between two substrates 218,208, can also be dispersed with separation material.
Afterwards, please refer to Fig. 9 B, at the opening 251 installing breather pipes 304 of fluid sealant 250.Above-mentioned breather pipe 304 for example is a glass tube.Then, breather pipe 304 is connected with pipeline 320, wherein said pipeline 320 is connected with air extractor 306 and with blanketing gas device 308.And on the pipeline 320 between breather pipe 304 and the air extractor 306, also be provided with valve 310, on the pipeline 320 between breather pipe 304 and the blanketing gas device 308, also be provided with valve 312.
Afterwards, install heater 302 around electron emitting-type light emitting device, so that electron emitting-type light emitting device is heated, heater 302 for example is the coiled resistive heater, and above-mentioned heating-up temperature for example is 200～400 degree Celsius.Afterwards, Open valve 210 and startup air extractor 306 are so that the gas in the electron emitting-type light emitting device is extracted out.Afterwards, valve-off 310 and air extractor 306, Open valve 312 and start blanketing gas device 308 then is to be filled to gas in the electron emitting-type light emitting device.Above-mentioned gas for example is inert gas, hydrogen (H
2), carbon dioxide (CO
2), oxygen (O
2) or air etc. have the gas of excellent conductive performance after dissociating, above-mentioned inert gas comprises helium (He), neon (Ne), argon (Ar), krypton (Kr) or xenon (Xe).
At last, blow breather pipe 304, with the opening 251 that seals up fluid sealant 250, shown in Fig. 9 C.The breather pipe 304a that blows will form the stopper in order to sealing, so that the gas in the electron emitting-type light emitting device can't shed.So, promptly finish the encapsulation of electron emitting-type light emitting device.
The negative electrode of electron emitting-type light emitting device proposed by the invention has design, uses the electric field edge effect that disperses between two electrodes.Therefore, the luminous uniformity of electron emitting-type light emitting device of the present invention is preferred.In addition, because the present invention can disperse the electric field edge effect between two electrodes,, the luminous uniformity is affected, thereby can reduces the integral thickness of electron emitting-type light emitting device even therefore two distance between electrodes are furthered.
Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, those of ordinary skill in any affiliated technical field, without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (19)
1. electron emitting-type light emitting device comprises:
First substrate disposes negative electrode on this first substrate, and wherein this negative electrode has design;
Second substrate is positioned at the subtend of this first substrate, and disposes anode on this second substrate;
Fluid sealant is positioned at the edge of this first substrate and this second substrate, so that this first substrate and this second substrate in batch are fitted together;
Gas is disposed between this negative electrode and this patterning anode, sends a plurality of electronics in order to induce this negative electrode, and wherein the air pressure of the existing environment of this gas is between 10 Bristols to 10
-3Bristol; And
Fluorescence coating is disposed on these movement of electrons paths, to emit beam with these electronic impact effects.
2. electron emitting-type light emitting device as claimed in claim 1, wherein this negative electrode comprises conductive layer and is positioned at a plurality of conductive patterns on this conductive layer surface.
3. electron emitting-type light emitting device as claimed in claim 1, wherein this first substrate has a plurality of dimpled grains, and is coated with conformal conductive layer on the surface of this first substrate to constitute this negative electrode.
4. electron emitting-type light emitting device as claimed in claim 1 wherein is distributed with a plurality of first separation materials in the sealing glue.
5. electron emitting-type light emitting device as claimed in claim 1 also comprises a plurality of second separation materials, is distributed between this negative electrode and this anode.
6. electron emitting-type light emitting device as claimed in claim 1, wherein this first substrate and this second substrate are plane or curved surface.
7. electron emitting-type light emitting device as claimed in claim 1, wherein this fluorescence coating is positioned at this anode surface.
8. electron emitting-type light emitting device as claimed in claim 1, wherein this anode is made by transparent conductive material.
9. electron emitting-type light emitting device as claimed in claim 1, wherein the material of this anode or this negative electrode comprises metal.
10. electron emitting-type light emitting device as claimed in claim 1 also comprises the induced discharge structure, and it is disposed at this anode and this negative electrode at least on one of them.
11. electron emitting-type light emitting device as claimed in claim 10, wherein this induced discharge structure comprises metal material, CNT (carbon nano-tube), nano-sized carbon wall, nanoaperture carbon material, pillar shaped ZnO, zinc oxide material etc.
12. electron emitting-type light emitting device as claimed in claim 1 also comprises secondary electron source material layer, is disposed on this negative electrode.
13. electron emitting-type light emitting device as claimed in claim 12, wherein the material of this secondary electron source material layer comprises magnesium oxide, silicon dioxide, terbium sesquioxide, lanthanum sesquioxide, aluminium oxide or ceria.
14. electron emitting-type light emitting device as claimed in claim 1, wherein this gas comprises inert gas, hydrogen, carbon dioxide, oxygen or air.
15. the method for packing of an electron emitting-type light emitting device comprises:
Electron emitting-type light emitting device is provided, and it comprises first substrate and second substrate, and has been formed with negative electrode on this first substrate, has been formed with anode on this second substrate, has been formed with fluorescence coating on this anode or this negative electrode;
Between this first substrate and this second substrate, form fluid sealant, and sealing glue has opening;
Opening installing breather pipe at sealing glue;
This breather pipe is connected with pipeline, and wherein this pipeline is connected with air extractor and with the blanketing gas device;
This electron emitting-type light emitting device is heated, and the gas in this electron emitting-type light emitting device is extracted out through opening this air extractor;
Close this air extractor, and open this blanketing gas device, gas is filled in this electron emitting-type light emitting device; And
Blow this breather pipe, to seal up the opening of sealing glue.
16. the method for packing of electron emitting-type light emitting device as claimed in claim 15, wherein this electron emitting-type light emitting device is heated to 200～400 degree Celsius.
17. the method for packing of electron emitting-type light emitting device as claimed in claim 15, wherein this negative electrode on this first substrate is the negative electrode with design.
18. the method for packing of electron emitting-type light emitting device as claimed in claim 15, wherein this first substrate and this second substrate are plane or curved surface.
19. the method for packing of electron emitting-type light emitting device as claimed in claim 15 wherein is distributed with a plurality of first separation materials in the sealing glue.
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| CN101794707B CN101794707B (en) | 2011-12-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103854960A (en) * | 2012-11-28 | 2014-06-11 | 海洋王照明科技股份有限公司 | Field emission device |
| CN112103297A (en) * | 2019-06-18 | 2020-12-18 | 群创光电股份有限公司 | Electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1280661C (en) * | 2003-03-24 | 2006-10-18 | 友达光电股份有限公司 | Back light module and liquid crystal display device |
| US20070120478A1 (en) * | 2005-11-28 | 2007-05-31 | Au Optronics Corporation | Double-sided display device and method of making same |
| CN101211748B (en) * | 2006-12-31 | 2011-08-10 | 财团法人工业技术研究院 | Light source device |
| US7969091B2 (en) * | 2007-03-02 | 2011-06-28 | Industrial Technology Research Institute | Field-emission apparatus of light source comprising a low pressure gas layer |
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2009
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103854960A (en) * | 2012-11-28 | 2014-06-11 | 海洋王照明科技股份有限公司 | Field emission device |
| CN103854960B (en) * | 2012-11-28 | 2016-04-27 | 海洋王照明科技股份有限公司 | A kind of feds |
| CN112103297A (en) * | 2019-06-18 | 2020-12-18 | 群创光电股份有限公司 | Electronic device |
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