CN101789696B - Virtual source earth voltage generating circuit - Google Patents
Virtual source earth voltage generating circuit Download PDFInfo
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- CN101789696B CN101789696B CN2010101214461A CN201010121446A CN101789696B CN 101789696 B CN101789696 B CN 101789696B CN 2010101214461 A CN2010101214461 A CN 2010101214461A CN 201010121446 A CN201010121446 A CN 201010121446A CN 101789696 B CN101789696 B CN 101789696B
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Abstract
The invention discloses a virtual source earth voltage generating circuit, comprising a high and low voltage generating circuit and a separation circuit, wherein the high and low voltage generating circuit consists of two inverter circuits with different polarities connected in parallel and can generate a high voltage and a low voltage; and the separation circuit can output the source voltage or the earth voltage according to the input high voltage and the low voltage. By adopting the virtual source earth voltage circuit, as the high and low voltage generating circuit consists of two inverter circuits, the value range of the source voltage (Vdd) is larger, and the source voltage and earth voltage with high stability can be output simultaneously in combination with the output characteristic of the separation circuit.
Description
Technical field
The present invention relates to integrated circuit and make the field, relate in particular to a kind of virtual source earth voltage generating circuit.
Background technology
In the semiconductor integrated circuit chip design, IC chip is reserved the function improvement that some pins are used for follow-up phase through regular meeting.But for operate as normal or the stability that guarantees chip, usually need be to fixing voltage of pin of these reservations, as be fixed as source voltage or earthed voltage.But in the practical application, add actual voltage or ground connection, will cause static to discharge and defective chip if reserve pin at IC chip.Thereby, need the pin that adopts virtual source voltage generation circuit and earth voltage generating circuit to provide source voltage and ground voltage to reserve respectively usually to said chip.
As shown in Figure 1, traditional source voltage generation circuit by 1 PMOS manage, 2 NMOS pipe forms.If the source voltage Vdd of transistor P1 and the conducting voltage V of feedback transistor N2
TN2Between difference Vdd-V
TN2Conducting voltage greater than P1 | V
TP1|, then P1 conducting, N1 ends, and the output voltage of P1 is Vdd, thereby obtains virtual source voltage Vdd.But during actual production, since the difference of production technology, the conducting voltage V of feedback transistor N2
TN2Can be different.If the source voltage Vdd of P1 is less, and the conducting voltage of N2 is very big, then Vdd-V
TN2Conducting voltage less than P1 | V
TP1| the time, P1 ends, and the P1 output voltage possibly be low-voltage, and source voltage Vdd can not be provided.This shows that traditional source potential circuit has restriction clearly, i.e. the conducting voltage V of the bigger and feedback transistor of the source voltage of P1
TN2Smaller.
As shown in Figure 2, traditional earth voltage generating circuit by 2 PMOS manage, 1 NMOS pipe forms.If source voltage Vdd and the conducting voltage V of feedback transistor P4
TP4Between difference Vdd-V
TP4Conducting voltage V greater than N6
TN6, then N6 conducting, the output voltage of N6 is a ground voltage ' 0 '.But during actual production, since the difference of production technology, the conducting voltage V of feedback transistor P4
TN4Can be different.If source voltage Vdd is less, and the conducting voltage V of P4
TP4Higher, Vdd-V then
TP4Conducting voltage V less than N6
TN6The time, N6 ends, and N6 output possibly be height, and ground voltage ' 0 ' can not be provided.This shows that traditional ground voltage circuit also has restriction clearly, require the conducting voltage V of the higher and feedback transistor P4 of source voltage Vdd
TP4Less.
From the above, no matter source voltage generation circuit or earth voltage generating circuit, the defective that all conducting voltage and the source voltage of feedback transistor is had higher requirement, the less stable of output voltage, and source voltage and ground voltage can not be provided simultaneously.
Summary of the invention
The object of the present invention is to provide the virtual source earth voltage generating circuit that a kind of source voltage span is big, output stability is high.
The present invention provides a kind of virtual source earth voltage generating circuit, and it comprises: the height voltage generation circuit, compose in parallel by opposite polarity two inverter circuits, and be used to produce a high voltage and a low-voltage; Split circuit is used for according to high voltage and low-voltage output source voltage or ground voltage.
Preferably, above-mentioned split circuit is an OR circuit, and said OR circuit is for composed in parallel by two PMOS pipes at least.
Preferably, above-mentioned split circuit is an OR circuit, and said OR circuit is or door.
Preferably, above-mentioned split circuit is an AND circuit, and said AND circuit is composed in parallel by two NMOS at least.
Preferably, above-mentioned split circuit is an AND circuit, and said OR circuit is and door.
The present invention also provides another kind of virtual source earth voltage generating circuit, and it comprises: the height voltage generation circuit,
Compose in parallel by opposite polarity two inverter circuits, be used to produce a high voltage and a low-voltage; Separate
The road is used for according to high voltage and low-voltage output source voltage and ground voltage.
Preferably, above-mentioned split circuit is made up of AND circuit and OR circuit.
Preferably, above-mentioned OR circuit is for composed in parallel by two PMOS pipes at least.
Preferably, above-mentioned OR circuit is or door.
Preferably, above-mentioned AND circuit is composed in parallel by two NMOS at least.
Preferably, above-mentioned AND circuit is and door.
Adopt virtual source earth voltage circuit of the present invention; Because the height voltage generation circuit is made up of two inverter circuits, the span of source voltage Vdd is bigger, combines split circuit again; Then can export the source voltage or the ground voltage of high stability, perhaps export the source voltage and the ground voltage of high stability.
Description of drawings
Fig. 1 is a virtual source voltage generation circuit structure chart in the prior art;
Fig. 2 is a virtual earth voltage generating circuit structure chart in the prior art;
Fig. 3 is a virtual source earth voltage generating circuit functional block diagram of the present invention;
Fig. 4 is a kind of virtual source earth voltage generating circuit structure chart in the embodiment;
Fig. 5 is the circuit structure diagram that a kind of virtual source earth voltage circuit in the embodiment produces source voltage;
Fig. 6 is the circuit structure diagram that a kind of virtual source earth voltage generating circuit in the embodiment produces ground voltage;
Fig. 7 is the circuit structure diagram that a kind of virtual source earth voltage generating circuit in the embodiment produces generation source voltage and ground voltage.
Embodiment
To the defective of above-mentioned virtual source voltage or earth voltage generating circuit, as shown in Figure 3, the present invention provides a kind of virtual source earth voltage generating circuit, and it comprises height voltage generation circuit 1 and split circuit 2.Wherein, high low-voltage output HIGH voltage and low-voltage be to split circuit, and split circuit can be separated this high voltage and low-voltage and produce source voltage or ground voltage, perhaps produces source voltage and ground voltage.
As shown in Figure 4, the height voltage generation circuit 1 specifically be formed in parallel by the opposite inverter of bipolarity, can know that by the output characteristic of inverter circuit it can produce two voltage V1 and V2, one of them be high voltage another be low-voltage.But be high voltage or low-voltage owing to distinguishing what person of V1 and V2, thereby need a split circuit isolate high voltage or low-voltage.Concrete can be through producing low-voltage with V1 and V2 input AND circuit, and V1 and OR circuit of V2 input produce high voltage.As shown in Figure 4, OR circuit can utilize two PMOS pipe P11 and P12 to compose in parallel, and AND circuit can utilize two NMOS pipe N11 and N12 to compose in parallel.If V1 is a high voltage, V2 is a low-voltage, then P12 pipe conducting, output source voltage; If V1 is a low-voltage, V2 is a high voltage, then P11 pipe conducting, output source voltage.In like manner, if V1 is a high voltage, V2 is a low-voltage, then N11 pipe conducting, output ground voltage; If V1 is a low-voltage, V2 is a high voltage, then N12 pipe conducting, output ground voltage.Obviously, OR circuit also can be composed in parallel by the pipe of the PMOS more than 2, and AND circuit also can be made up of the pipe of the NMOS more than 2.Because the height voltage generation circuit is composed in parallel by two inverters, can know that by the characteristic of inverter height voltage generation circuit source voltage Vdd span is bigger, and can export the high voltage or the low-voltage of high stability.
Certainly, if the split circuit 2 of Fig. 4 has only OR circuit, promptly only be provided with two PMOS pipe, then exportable source voltage, virtual source earth voltage generating circuit shown in Figure 4 are the source voltage generation circuit; If the split circuit 2 of Fig. 4 has only AND circuit, promptly only be provided with two NMOS pipe, then import ground voltage, virtual source earth voltage generating circuit shown in Figure 4 is an earth voltage generating circuit; If the split circuit 2 of Fig. 4 has AND circuit and OR circuit, promptly be provided with two PMOS pipe and two NMOS pipe, then exportable source voltage and ground voltage, virtual source earth voltage generating circuit shown in Figure 4 are the seedbed voltage generation circuit.Because height voltage generation circuit 1 is made up of two inverters; There is not the restriction of feedback transistor conducting voltage; Thereby its source voltage Vdd can have bigger span; Reduce the harsh requirement of integrated circuit technology design, and the effect of all right output source voltage simultaneously of this virtual source earth voltage generating circuit and ground voltage, and the source voltage and the ground voltage of output are highly stable.
Like Fig. 5, shown in Figure 6, split circuit 2 can for simply be or with door.Because height voltage generation circuit 1 has produced desirable high voltage and low-voltage; Obviously; Circuit with the output of high voltage output effect all can be OR circuit, and should not only limit to the OR circuit that the parallel connection of two PMOS pipe constitutes among Fig. 4 of the present invention, or the simple or door among Fig. 5; Circuit with low-voltage input effect all can be AND circuit, and should not only limit to the AND circuit that the parallel connection of two NMOS pipe constitutes among Fig. 4 of the present invention, or the simple and door among Fig. 6.Certainly, split circuit 2 is simultaneously output source voltage and ground voltage also, and is as shown in Figure 7, when split circuit is made up of AND circuit and OR circuit, and AND circuit output ground voltage, while OR circuit output source voltage.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. a virtual source earth voltage generating circuit is characterized in that, comprises:
The height voltage generation circuit is composed in parallel by opposite polarity two inverter circuits, is used to produce a high voltage and a low-voltage;
Split circuit is used for according to said high voltage and low-voltage output source voltage or ground voltage.
2. virtual source earth voltage generating circuit as claimed in claim 1 is characterized in that, said split circuit is an OR circuit.
3. virtual source earth voltage generating circuit as claimed in claim 2 is characterized in that, said OR circuit is for composed in parallel by two PMOS pipes at least.
4. virtual source earth voltage generating circuit as claimed in claim 2 is characterized in that, said OR circuit is or door.
5. virtual source earth voltage generating circuit as claimed in claim 1 is characterized in that, said split circuit is an AND circuit.
6. virtual source earth voltage generating circuit as claimed in claim 5 is characterized in that, said AND circuit is composed in parallel by two NMOS at least.
7. virtual source earth voltage generating circuit as claimed in claim 5 is characterized in that said AND circuit is and door.
8. virtual source earth voltage generating circuit as claimed in claim 1 is characterized in that said split circuit is made up of AND circuit and OR circuit.
9. virtual source earth voltage generating circuit as claimed in claim 8 is characterized in that, said AND circuit is and door that said OR circuit is or door.
10. a virtual source earth voltage generating circuit is characterized in that, comprises:
The height voltage generation circuit is composed in parallel by opposite polarity two inverter circuits, is used to produce a high voltage and a low-voltage;
Split circuit is used for according to said high voltage and low-voltage output source voltage and ground voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101214461A CN101789696B (en) | 2010-03-10 | 2010-03-10 | Virtual source earth voltage generating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101214461A CN101789696B (en) | 2010-03-10 | 2010-03-10 | Virtual source earth voltage generating circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101789696A CN101789696A (en) | 2010-07-28 |
| CN101789696B true CN101789696B (en) | 2012-07-25 |
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ID=42532789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101214461A Active CN101789696B (en) | 2010-03-10 | 2010-03-10 | Virtual source earth voltage generating circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101789696B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301912A (en) * | 1999-12-28 | 2001-07-04 | 本田技研工业株式会社 | Valve operation system in IC engine |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03125981A (en) * | 1989-10-11 | 1991-05-29 | Nec Corp | Hazard detection circuit |
| US20070182455A1 (en) * | 2006-02-08 | 2007-08-09 | Jinn-Shyan Wang | AND type match circuit structure for content-addressable memories |
-
2010
- 2010-03-10 CN CN2010101214461A patent/CN101789696B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301912A (en) * | 1999-12-28 | 2001-07-04 | 本田技研工业株式会社 | Valve operation system in IC engine |
Non-Patent Citations (1)
| Title |
|---|
| JP平3-125981A 1991.05.29 |
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|---|---|
| CN101789696A (en) | 2010-07-28 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
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Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |