CN101763899B - 采用二极化存储元的三维只读存储器 - Google Patents
采用二极化存储元的三维只读存储器 Download PDFInfo
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- CN101763899B CN101763899B CN2008101860137A CN200810186013A CN101763899B CN 101763899 B CN101763899 B CN 101763899B CN 2008101860137 A CN2008101860137 A CN 2008101860137A CN 200810186013 A CN200810186013 A CN 200810186013A CN 101763899 B CN101763899 B CN 101763899B
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CN2008101860137A CN101763899B (zh) | 2002-11-17 | 2002-11-17 | 采用二极化存储元的三维只读存储器 |
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CN2008101860137A CN101763899B (zh) | 2002-11-17 | 2002-11-17 | 采用二极化存储元的三维只读存储器 |
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CNB021501904A Division CN100485927C (zh) | 2001-11-18 | 2002-11-17 | 三维存储器 |
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CN101763899A CN101763899A (zh) | 2010-06-30 |
CN101763899B true CN101763899B (zh) | 2012-11-14 |
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CN2008101860137A Expired - Lifetime CN101763899B (zh) | 2002-11-17 | 2002-11-17 | 采用二极化存储元的三维只读存储器 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110021601A (zh) * | 2018-01-10 | 2019-07-16 | 杭州海存信息技术有限公司 | 含有多层反熔丝膜的三维纵向一次编程存储器 |
CN110021600A (zh) * | 2018-01-10 | 2019-07-16 | 成都海存艾匹科技有限公司 | 不含单独二极管膜的三维纵向一次编程存储器 |
CN110021624A (zh) * | 2018-01-10 | 2019-07-16 | 成都海存艾匹科技有限公司 | 含有多层编程膜的三维纵向多次编程存储器 |
CN110071136A (zh) * | 2018-01-21 | 2019-07-30 | 成都海存艾匹科技有限公司 | 三维纵向电编程存储器 |
CN110021623A (zh) * | 2018-01-10 | 2019-07-16 | 杭州海存信息技术有限公司 | 含有自建肖特基二极管的三维纵向多次编程存储器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5383149A (en) * | 1993-11-26 | 1995-01-17 | United Microelectronics Corporation | Ulsi mask ROM structure and method of manufacture |
CN1212452A (zh) * | 1998-09-24 | 1999-03-31 | 张国飙 | 三维只读存储器 |
US6004825A (en) * | 1996-06-07 | 1999-12-21 | Micron Technology, Inc. | Method for making three dimensional ferroelectric memory |
CN1339159A (zh) * | 1998-11-16 | 2002-03-06 | 矩阵半导体公司 | 垂直叠式现场可编程非易失存储器和制造方法 |
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2002
- 2002-11-17 CN CN2008101860137A patent/CN101763899B/zh not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5383149A (en) * | 1993-11-26 | 1995-01-17 | United Microelectronics Corporation | Ulsi mask ROM structure and method of manufacture |
US6004825A (en) * | 1996-06-07 | 1999-12-21 | Micron Technology, Inc. | Method for making three dimensional ferroelectric memory |
CN1212452A (zh) * | 1998-09-24 | 1999-03-31 | 张国飙 | 三维只读存储器 |
CN1339159A (zh) * | 1998-11-16 | 2002-03-06 | 矩阵半导体公司 | 垂直叠式现场可编程非易失存储器和制造方法 |
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