CN101755339A - 经由种子印刷和镀覆进行的接触金属和互连金属的印刷 - Google Patents

经由种子印刷和镀覆进行的接触金属和互连金属的印刷 Download PDF

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Publication number
CN101755339A
CN101755339A CN200880024999A CN200880024999A CN101755339A CN 101755339 A CN101755339 A CN 101755339A CN 200880024999 A CN200880024999 A CN 200880024999A CN 200880024999 A CN200880024999 A CN 200880024999A CN 101755339 A CN101755339 A CN 101755339A
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CN
China
Prior art keywords
metal
silicide
ink
dielectric
silicon
Prior art date
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Pending
Application number
CN200880024999A
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English (en)
Chinese (zh)
Inventor
阿迪提·钱德拉
阿尔万德·卡玛斯
詹姆斯·蒙塔格·克里夫斯
约尔格·罗克恩伯格
高岛真穗
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Kovio Inc
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Kovio Inc
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Filing date
Publication date
Application filed by Kovio Inc filed Critical Kovio Inc
Publication of CN101755339A publication Critical patent/CN101755339A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H10P14/414—Deposition of metallic or metal-silicide materials of metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
CN200880024999A 2007-07-17 2008-07-17 经由种子印刷和镀覆进行的接触金属和互连金属的印刷 Pending CN101755339A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95997707P 2007-07-17 2007-07-17
US60/959,977 2007-07-17
PCT/US2008/070389 WO2009012423A1 (en) 2007-07-17 2008-07-17 Printing of contact metal and interconnect metal via seed printing and plating

Publications (1)

Publication Number Publication Date
CN101755339A true CN101755339A (zh) 2010-06-23

Family

ID=40260086

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880024999A Pending CN101755339A (zh) 2007-07-17 2008-07-17 经由种子印刷和镀覆进行的接触金属和互连金属的印刷

Country Status (6)

Country Link
US (2) US8158518B2 (https=)
EP (1) EP2168165A4 (https=)
JP (2) JP2010533983A (https=)
KR (1) KR101578229B1 (https=)
CN (1) CN101755339A (https=)
WO (1) WO2009012423A1 (https=)

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CN112201615A (zh) * 2020-09-09 2021-01-08 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
CN116936475A (zh) * 2023-09-15 2023-10-24 粤芯半导体技术股份有限公司 半导体器件制备方法

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JP2010533983A (ja) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷
US8099707B1 (en) 2008-03-17 2012-01-17 Kovio, Inc. Field configured electronic circuits and methods of making the same
US7667304B2 (en) * 2008-04-28 2010-02-23 National Semiconductor Corporation Inkjet printed leadframes
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8424176B2 (en) * 2008-11-25 2013-04-23 Kovio, Inc. Methods of forming tunable capacitors
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8669169B2 (en) * 2010-09-01 2014-03-11 Piquant Research Llc Diffusion sources from liquid precursors
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
JP5637204B2 (ja) * 2012-12-10 2014-12-10 トヨタ自動車株式会社 シリコンカーバイトウエハの検査方法及び検査装置
WO2015093455A1 (ja) * 2013-12-16 2015-06-25 国立大学法人北陸先端科学技術大学院大学 半導体素子及びその製造方法、並びに脂肪族ポリカーボネート
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US12074228B2 (en) 2015-06-17 2024-08-27 Unm Rainforest Innovations Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells
US11374133B2 (en) * 2015-06-17 2022-06-28 Unm Rainforest Innovations Metal matrix composites for contacts on solar cells
US9799617B1 (en) 2016-07-27 2017-10-24 Nxp Usa, Inc. Methods for repackaging copper wire-bonded microelectronic die
TWI681447B (zh) * 2017-09-26 2020-01-01 穩懋半導體股份有限公司 耐高溫之化合物半導體基板之背面金屬改良結構
RU2688861C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
US11259402B1 (en) 2020-09-08 2022-02-22 United States Of America As Represented By The Secretary Of The Air Force Fabrication of electrical and/or optical crossover signal lines through direct write deposition techniques
JP2024104919A (ja) * 2023-01-25 2024-08-06 タカノ株式会社 シリコン構造体の製造方法

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
CN112201615A (zh) * 2020-09-09 2021-01-08 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
CN112201615B (zh) * 2020-09-09 2024-04-19 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
CN116936475A (zh) * 2023-09-15 2023-10-24 粤芯半导体技术股份有限公司 半导体器件制备方法
CN116936475B (zh) * 2023-09-15 2023-12-22 粤芯半导体技术股份有限公司 半导体器件制备方法

Also Published As

Publication number Publication date
KR20100045968A (ko) 2010-05-04
JP6073829B2 (ja) 2017-02-01
EP2168165A4 (en) 2012-07-04
US20120181636A1 (en) 2012-07-19
EP2168165A1 (en) 2010-03-31
US20090020829A1 (en) 2009-01-22
JP2014150277A (ja) 2014-08-21
WO2009012423A1 (en) 2009-01-22
JP2010533983A (ja) 2010-10-28
US8617992B2 (en) 2013-12-31
KR101578229B1 (ko) 2015-12-16
US8158518B2 (en) 2012-04-17

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Application publication date: 20100623