CN101752483B - 发光二极管 - Google Patents
发光二极管 Download PDFInfo
- Publication number
- CN101752483B CN101752483B CN2008103062517A CN200810306251A CN101752483B CN 101752483 B CN101752483 B CN 101752483B CN 2008103062517 A CN2008103062517 A CN 2008103062517A CN 200810306251 A CN200810306251 A CN 200810306251A CN 101752483 B CN101752483 B CN 101752483B
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- exiting surface
- fluorescent material
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008103062517A CN101752483B (zh) | 2008-12-15 | 2008-12-15 | 发光二极管 |
US12/622,712 US8350280B2 (en) | 2008-12-15 | 2009-11-20 | Light emitting diode with light conversion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008103062517A CN101752483B (zh) | 2008-12-15 | 2008-12-15 | 发光二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101752483A CN101752483A (zh) | 2010-06-23 |
CN101752483B true CN101752483B (zh) | 2011-09-28 |
Family
ID=42239450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008103062517A Expired - Fee Related CN101752483B (zh) | 2008-12-15 | 2008-12-15 | 发光二极管 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8350280B2 (zh) |
CN (1) | CN101752483B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106784259A (zh) * | 2016-11-10 | 2017-05-31 | 深圳天珑无线科技有限公司 | 一种多色温混合光源及其制作方法、移动终端 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102487116B (zh) * | 2010-12-03 | 2014-11-05 | 展晶科技(深圳)有限公司 | 发光二极管 |
TWI469397B (zh) * | 2010-12-07 | 2015-01-11 | Advanced Optoelectronic Tech | 發光二極體 |
JP2012248553A (ja) * | 2011-05-25 | 2012-12-13 | Panasonic Corp | 発光装置及びそれを用いた照明装置 |
WO2013097736A1 (zh) * | 2011-12-30 | 2013-07-04 | 大连路明发光科技股份有限公司 | 一种彩色发光模块及光源 |
CN103208503A (zh) * | 2012-01-13 | 2013-07-17 | 华夏光股份有限公司 | 发光二极管数组及其制造方法 |
US8803185B2 (en) * | 2012-02-21 | 2014-08-12 | Peiching Ling | Light emitting diode package and method of fabricating the same |
DE102012202927B4 (de) * | 2012-02-27 | 2021-06-10 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
CN104205365B (zh) * | 2012-03-19 | 2020-06-16 | 亮锐控股有限公司 | 磷光体施加前后发光器件的单个化 |
DE102012222475A1 (de) | 2012-12-06 | 2014-06-12 | Osram Gmbh | Leuchtdiode aufweisend mehrere leuchtstoffbereiche |
CN103545458B (zh) * | 2013-10-18 | 2019-06-11 | 京东方科技集团股份有限公司 | 照明装置及其制作方法 |
JP2015176960A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 発光装置 |
KR102222580B1 (ko) * | 2014-07-30 | 2021-03-05 | 삼성전자주식회사 | 발광 소자 패키지 및 이를 포함하는 표시 장치 |
DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
US9502621B2 (en) * | 2015-03-23 | 2016-11-22 | High Power Opto, Inc. | High energy invisible light light emitting diode having safety indication |
CN108183159A (zh) * | 2017-11-17 | 2018-06-19 | 广州市香港科大霍英东研究院 | 一种微发光二极管、微发光显示器数组结构及封装方法 |
KR20200124725A (ko) * | 2018-02-28 | 2020-11-03 | 사빅 글로벌 테크놀러지스 비.브이. | 표면으로부터의 방사선 또는 열을 방출하기 위한 방법 및 디바이스 |
DE102018104993A1 (de) * | 2018-03-05 | 2019-09-05 | Osram Opto Semiconductors Gmbh | Bauelement mit elektrisch leitfähiger konverterschicht |
CN109950385B (zh) * | 2019-04-24 | 2020-09-08 | 业成科技(成都)有限公司 | 发光元件、显示装置、发光组件及其制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101290959A (zh) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | 发光二极管装置的荧光粉涂布方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2838735B2 (ja) * | 1991-07-05 | 1998-12-16 | 富士ゼロックス株式会社 | 画像読取装置 |
US7416906B2 (en) * | 2005-05-18 | 2008-08-26 | Asahi Rubber Inc. | Soldering method for semiconductor optical device, and semiconductor optical device |
JP2007027431A (ja) * | 2005-07-15 | 2007-02-01 | Toshiba Corp | 発光装置 |
DE102006000476A1 (de) * | 2005-09-22 | 2007-05-24 | Lexedis Lighting Gesmbh | Lichtemissionsvorrichtung |
-
2008
- 2008-12-15 CN CN2008103062517A patent/CN101752483B/zh not_active Expired - Fee Related
-
2009
- 2009-11-20 US US12/622,712 patent/US8350280B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101290959A (zh) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | 发光二极管装置的荧光粉涂布方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106784259A (zh) * | 2016-11-10 | 2017-05-31 | 深圳天珑无线科技有限公司 | 一种多色温混合光源及其制作方法、移动终端 |
Also Published As
Publication number | Publication date |
---|---|
US20100148200A1 (en) | 2010-06-17 |
CN101752483A (zh) | 2010-06-23 |
US8350280B2 (en) | 2013-01-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201600 Shanghai City, Songjiang District Songjiang Industrial Zone West science and Technology Industrial Park No. 500 Wen Ji Lu Patentee after: Foxsemicon Semiconductor Precision (Shanghai) Inc. Patentee after: Foxsemicon Integrated Technology Inc. Address before: 201600 Shanghai City, Songjiang District Songjiang Industrial Zone West science and Technology Industrial Park No. 500 Wen Ji Lu Patentee before: Foxsemicon Semiconductor Precision (Shanghai) Inc. Patentee before: Foxsemicon Integrated Technology Inc. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110928 Termination date: 20131215 |