CN101750900B - 判断哪个光刻工序造成以曝光面积为单位的低良率的方法 - Google Patents
判断哪个光刻工序造成以曝光面积为单位的低良率的方法 Download PDFInfo
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CN2008100441066A CN101750900B (zh) | 2008-12-16 | 2008-12-16 | 判断哪个光刻工序造成以曝光面积为单位的低良率的方法 |
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CN2008100441066A CN101750900B (zh) | 2008-12-16 | 2008-12-16 | 判断哪个光刻工序造成以曝光面积为单位的低良率的方法 |
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CN101750900A CN101750900A (zh) | 2010-06-23 |
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CN103811298B (zh) * | 2012-11-15 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | 测试对准使用芯片的制作方法 |
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TW234217B (zh) * | 1993-02-10 | 1994-11-11 | Nat Semiconductor Corp | |
CN1716519A (zh) * | 2004-06-14 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体器件的成品率相似性的方法和系统 |
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TW234217B (zh) * | 1993-02-10 | 1994-11-11 | Nat Semiconductor Corp | |
CN1716519A (zh) * | 2004-06-14 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体器件的成品率相似性的方法和系统 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |