CN101740692A - Method for improving brightness of LED chip - Google Patents
Method for improving brightness of LED chip Download PDFInfo
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- CN101740692A CN101740692A CN200910202034A CN200910202034A CN101740692A CN 101740692 A CN101740692 A CN 101740692A CN 200910202034 A CN200910202034 A CN 200910202034A CN 200910202034 A CN200910202034 A CN 200910202034A CN 101740692 A CN101740692 A CN 101740692A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 8
- 239000010980 sapphire Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 4
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 48
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 23
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 241000931526 Acer campestre Species 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 23
- 239000010931 gold Substances 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Abstract
The invention discloses a method for improving brightness of an LED chip. The method comprises the following steps of: utilizing the metallic organic chemical vapor phase deposition to grow a GaN semiconductor layer comprising an N-GaN layer, a quantum well and a P-GaN layer on a sapphire substrate; utilizing the ICP Etching or RIE to make partial N-GaN layer exposed; coating a metallic layer on the GaN semiconductor layer by vaporization and using the metallic layer as a mask film layer; adopting the laser scribing technique to scribe the formed chip unit down to the sapphire substrate; corroding the N-GaN layer on the side wall of a scribing way by using the metallic layer as the mask film, so that the N-GaN layer forms a structure of a gradually changed inverted triangle; removing the metallic layer; manufacturing a transparent electrode, an N/P electrode and an SiO2 passivation layer on the corroded chip unit; and grinding the back of the LED wafer for thinning, and breaking the LED wafer by a breaking machine to obtain the LED chip. The method has the advantages of changing transmission distance of light, increasing a probability of photons escaping from the chip, improving the light outputting efficiency of the LED chip and making the brightness of the LED chip improved by over 10 percent.
Description
Technical field
The present invention relates to the semiconductor light-emitting-diode field, particularly relate to a kind of method that improves led chip brightness.
Background technology
Light-emitting diode has that volume is little, efficient is high and advantage such as the life-span is long, has a wide range of applications in fields such as traffic indication, outdoor panchromatic demonstrations.Especially utilize large-power light-emitting diodes may realize semiconductor solid lighting, cause the revolution of human illumination history, thereby become the research focus of present person in electronics gradually.To improve the internal quantum efficiency and the external quantum efficiency of device for the LED key that obtains high brightness.The current chip light extraction efficiency is the principal element of limiting device external quantum efficiency, main cause is that the refractive index difference between backing material, epitaxial material and the air is bigger, and the light that causes active area to produce can not be derived chip in the generation total reflection of different refractivity material interface.
The method of existing several raising chip light extraction efficiencies mainly contains: change the geometric shape of chip, reduce the propagation distance of light at chip internal, reduce the absorption loss of light, as adopting inverted pyramid structure; Structures such as resonant cavity or photonic crystal are adopted in control and change spontaneous radiation usually; Adopt the rough surface method, make light, increase the chance of its transmission in coarse semiconductor and air interface generation diffusion; The reversing of utilization welding technology is arranged in addition.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method that improves led chip brightness, can effectively improve the brightness of led chip.
For solving the problems of the technologies described above, the manufacture method of led chip of the present invention may further comprise the steps:
Step 1, utilize the metal organic chemical vapor deposition technology to grow GaN (gallium nitride) semiconductor layer on Sapphire Substrate, this layer comprises N-GaN layer, quantum well and P-GaN layer;
Step 2, utilize inductive couple plasma etching or reactive ion etching that the described N-GaN layer of part is exposed;
Step 3, on described GaN semiconductor layer evaporated metal layer, with this metal level as mask layer;
Step 5, with described metal level as mask, use the ethylene glycol solution of KOH (potassium hydroxide), NaOH (NaOH) that the N-GaN layer of drawing the road sidewall is corroded, the N-GaN layer becomes " gradual change inverted triangle " structure after excessive erosion;
Step 7, the chip unit making transparency electrode, N/P electrode, the SiO2 passivation layer that were corroding;
Adopt method of the present invention, because the GaN crystal is a hexagonal wurtzite structure, KOH, NaOH can make the N-GaN layer form " gradual change inverted triangle " structure to the corrosion rate difference of each crystal face; Therefore can change the propagation distance of light, the probability that the increase photon is escaped from chip, the light extraction efficiency that improves led chip, can make the brightness of led chip improve more than 10%.
Fig. 2 A is conventional led chip part-structure schematic diagram.Because conventional led chip sidewall is vertical, when the photon P that gives off with incidence angle θ
1When arriving first wall W1, after reflection can be with incidence angle θ
2Arrive the second wall W2 (being the chip sidewall); Once more can be after the reflection with incidence angle θ
3Arrive the 3rd wall W3, wherein incidence angle θ
2=90 °-θ
1, θ
3=θ 1.For the led chip of GaN material commonly used, its light escape taper critical angle (light escape cone critical angle) is about 23.5 °, so as long as the incidence angle θ of photon P
1Satisfy condition " 23.5 °＜θ
1＜66.5 ° " time, it can cause energy at the chip internal consumption because of constantly being reflected by each wall, finally can't bright dipping, and light extraction efficiency is lower.
Fig. 2 B is the led chip part-structure schematic diagram that adopts method of the present invention to make, when photon P arrives W2 (being the chip sidewall), because W2 is " gradual change inverted triangle " structure, reflection ray direction on W2 can change, therefore when photon P arrives W3, incidence angle diminishes, total reflection can not take place, can escape away, can increase like this photon from the probability of chip escape, significantly improve the light extraction efficiency of led chip.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Figure 1A to Fig. 1 E is a crucial manufacturing step embodiment schematic diagram in the method for the present invention;
Fig. 2 A is conventional led chip part-structure schematic diagram;
Fig. 2 B is the led chip part-structure schematic diagram that adopts method of the present invention to obtain;
Fig. 3 adopts the led chip that the inventive method obtains and the photoelectric parameter comparison diagram of conventional led chip.
Embodiment
Be example with the 10*23mil chip below, specify method implementation process of the present invention:
Step 1, utilize the metal organic chemical vapor deposition technology to grow GaN (gallium nitride) semiconductor layer on Sapphire Substrate, this layer comprises N-GaN layer, quantum well and P-GaN layer, shown in Figure 1A.
Step 2, utilize ICP Etching (inductive couple plasma etching) or RIE (reactive ion etching) technology that the described N-GaN layer of part is exposed, etching depth is
, shown in Figure 1B; Described in one embodiment etching depth is
Step 3, on described GaN semiconductor layer evaporated metal layer Ni/Ag, thickness is
, the plating rate is respectively
,
, with this metal level as mask layer, shown in Fig. 1 C.
Described metal level is divided into two-layer, and what contact with the GaN layer is adhesion layer, and what contact with adhesion layer is protective layer.The effect of described adhesion layer is to adhere to GaN layer and protective layer.The metal that adhesion layer is commonly used has the combination of Ni (nickel), Ti (titanium), Al (aluminium), Cr (chromium), Cr/Pt (chromium/platinum) or above metal etc., and the thickness of adhesion layer is optional
, the plating rate is
The effect of described protective layer is a protection GaN layer, makes it not by laser emission, KOH, NaOH corrosion failure.The metal that protective layer is commonly used has Ag (silver), Au (gold), Ag/Au (silver/gold), Au/Ag (gold/silver) etc., and the thickness of protective layer is optional
, the plating rate is
The metallic combination that described metal level is commonly used has Ni/Ag (nickel/silver), Ni/Au (nickel/gold), Ti/Ag (titanium/silver), Ti/Au (titanium/gold), Al/Ag (aluminium/silver), Cr/Au (chromium/gold), Cr/Pt/Au (chromium/platinum/gold) etc.
Step 5, with described metal level as mask, use the ethylene glycol solution of KOH, NaOH that the N-GaN layer of drawing the road sidewall is corroded, the N-GaN layer becomes " gradual change inverted triangle " structure after excessive erosion; The concentration of described KOH is 1-10mol/L, and the concentration of NaOH is 1-10mol/L, and corrosion temperature is 100-200 ℃, and etching time is 1-60min, and the corrosion width of drawing the every side in road is 1-30 μ m.
In one embodiment, the concentration of KOH, NaOH is 5mol/L, and corrosion temperature is 150 ℃, and etching time is 5-25min, and the corrosion width of drawing the every side in road is 4-12 μ m.
Step 7, the chip unit making transparency electrode, N/P electrode, the SiO2 passivation layer that were corroding; This part is known by those skilled in the art to be known, so be not described in detail.
Adopt the 10*23mil chip that method of the present invention obtains and the photoelectric parameter contrast of conventional 10*23mil chip, as shown in Figure 3.Can find out big more, brightness (mW) the lifting amplitude also big more (11.2%-19.0%) of corrosion width; This is because the probability that the corrosion width is big more, gradual change inverted triangle structure is obvious more, photon is escaped from chip is big more, chip light-emitting efficiency is high more; Meanwhile, the corrosion width is big more, and ESD (static discharge) percent of pass has the trend of step-down, and this is because the cavity is big more under obvious more, the N-GaN of gradual change inverted triangle structure, chip antistatic capability is poor more; So for this chip, suitable corrosion width is 6-12 μ m.
More than by specific embodiment the present invention is had been described in detail; but these are not to be construed as limiting the invention; concrete process only is for the ease of understanding the present invention in for example described each step; those skilled in the art can adopt other the concrete process that exists in the prior art fully; under the situation that does not break away from the principle of the invention; also can make many distortion and improvement, these also should be considered as protection scope of the present invention.
Claims (6)
1. a method that improves led chip brightness is characterized in that, comprises the steps:
Step 1, utilize the metal organic chemical vapor deposition technology to grow the GaN semiconductor layer on Sapphire Substrate, this layer comprises N-GaN layer, quantum well and P-GaN layer;
Step 2, utilize inductive couple plasma etching or reactive ion etching that the described N-GaN layer of part is exposed;
Step 3, on described GaN semiconductor layer evaporated metal layer, with this metal level as mask layer;
Step 4, use laserscribing are scratched the chip unit that forms, and draw to Sapphire Substrate;
Step 5, with described metal level as mask, use the ethylene glycol solution of KOH, NaOH that the N-GaN layer of drawing the road sidewall is corroded, the N-GaN layer becomes " gradual change inverted triangle " structure after excessive erosion;
Step 6, use cleaning fluid are removed described metal level;
Step 7, the chip unit making transparency electrode, N/P electrode, the SiO2 passivation layer that were corroding;
Step 8, resulting LED wafer is carried out the grinding back surface attenuate, obtain led chip with sliver machine sliver again.
2. manufacture method as claimed in claim 1 is characterized in that: the degree of depth of the described etching of step 2 is
3. manufacture method as claimed in claim 1 is characterized in that: described metal level is divided into two-layer, and what contact with the GaN layer is adhesion layer, and what contact with adhesion layer is protective layer; Described adhesion layer is the combination of Ni, Ti, Al, Cr, Cr/Pt or above metal, and thickness is
The plating rate is
Described protective layer is Ag, Au, Ag/Au or Au/Ag, and thickness is
The plating rate is
4. manufacture method as claimed in claim 1 is characterized in that: the optical maser wavelength that is adopted in the step 4 is 200-400nm, and drawing the road width is 2-15 μ m, and the scribing degree of depth is 15-50 μ m.
5. manufacture method as claimed in claim 1, it is characterized in that: the concentration of the KOH that adopts is 1-10mol/L in the step 5, and the concentration of NaOH is 1-10mol/L, and corrosion temperature is 100-200 ℃, etching time is 1-60min, and the corrosion width of drawing the every side in road is 1-30 μ m.
6. manufacture method as claimed in claim 1, it is characterized in that: described cleaning fluid is different because of metal level, Ni, Ag adopt nitric acid to remove, Ti adopts the concentrated hydrochloric acid of hydrofluoric acid, heat, the concentrated sulfuric acid of heat to remove, Al adopts highly basic or diluted acid to remove, Cr adopts " HCl+Cr " to remove, and Pt, Au adopt chloroazotic acid to remove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910202034A CN101740692B (en) | 2009-12-24 | 2009-12-24 | Method for improving brightness of LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910202034A CN101740692B (en) | 2009-12-24 | 2009-12-24 | Method for improving brightness of LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101740692A true CN101740692A (en) | 2010-06-16 |
| CN101740692B CN101740692B (en) | 2012-10-17 |
Family
ID=42463828
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|---|---|---|---|
| CN200910202034A Expired - Fee Related CN101740692B (en) | 2009-12-24 | 2009-12-24 | Method for improving brightness of LED chip |
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| CN102255010A (en) * | 2011-07-13 | 2011-11-23 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride light-emitting diode |
| CN102306693A (en) * | 2011-09-30 | 2012-01-04 | 厦门市三安光电科技有限公司 | Graphical nitride-based luminescent epitaxial wafer and luminescent chip, and manufacturing methods thereof |
| CN102655195A (en) * | 2011-03-03 | 2012-09-05 | 展晶科技(深圳)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN102832303A (en) * | 2012-09-05 | 2012-12-19 | 安徽三安光电有限公司 | Preparation method of gallium nitride substrate high brightness light emitting diode |
| CN103388159A (en) * | 2012-05-11 | 2013-11-13 | 深圳市格林美高新技术股份有限公司 | Method for recovering gallium from gallium nitride-containing wastes |
| CN104134608A (en) * | 2014-08-06 | 2014-11-05 | 上海世山科技有限公司 | Method for manufacturing GaN substrate by using chemical etching |
| US20150050762A1 (en) * | 2013-08-14 | 2015-02-19 | Gwangju Institute Of Science And Technology | SEPARATION METHOD OF GaN SUBSTRATE BY WET ETCHING |
| CN106206874A (en) * | 2016-08-12 | 2016-12-07 | 泉州市三星消防设备有限公司 | A kind of electrode aberration ameliorative way of LED chip based on roughening epitaxial wafer |
| CN112599553A (en) * | 2020-12-15 | 2021-04-02 | 天津赛米卡尔科技有限公司 | Novel Micro-LED display array capable of reducing optical crosstalk and preparation method thereof |
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| CN114464714A (en) * | 2022-02-16 | 2022-05-10 | 聚灿光电科技（宿迁）有限公司 | Chip manufacturing method for improving light extraction efficiency of LED chip |
| WO2023155422A1 (en) * | 2022-02-16 | 2023-08-24 | 聚灿光电科技股份有限公司 | Chip manufacturing method for improving light extraction efficiency of led chip, and led chip |
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| Publication number | Publication date |
|---|---|
| CN101740692B (en) | 2012-10-17 |
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