CN101740546A - Deposition structure of metallic layer for improving electric migration performance of aluminum and copper and method for manufacturing same - Google Patents
Deposition structure of metallic layer for improving electric migration performance of aluminum and copper and method for manufacturing same Download PDFInfo
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- CN101740546A CN101740546A CN200810043943A CN200810043943A CN101740546A CN 101740546 A CN101740546 A CN 101740546A CN 200810043943 A CN200810043943 A CN 200810043943A CN 200810043943 A CN200810043943 A CN 200810043943A CN 101740546 A CN101740546 A CN 101740546A
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Abstract
The invention discloses a deposition structure of a metallic layer for improving electric migration performance of aluminum and copper and a method for manufacturing the same. The structure comprises a first layer of titanium, a second layer of titanium nitride, a third layer of aluminum and copper, a fourth layer of titanium, and a fifth layer of titanium nitride in sequence, wherein a layer of titanium aluminum alloy is arranged between the second layer of titanium nitride and the third layer of aluminum and copper. The structure can effectively improve the electric migration resistance of aluminum-copper wiring metals.
Description
Technical field
The present invention relates to the manufacture of semiconductor technology field, be specifically related to a kind of semiconductor alloy deposition structure and preparation method thereof.
Background technology
At present the semiconductor industry uses aluminum bronze (aluminum bronze) common metal level deposition sequence when metal interconnected to be titanium/titanium nitride/aluminum bronze/titanium/titanium nitride (titanium/titanium nitride/aluminum bronze/titanium/titanium nitride), but along with product size is done littler and littler, current density is increasing, cause the electromigratory challenge of metal level deposit increasingly, this also is one of major reason of being adopted by small-size product of copper (Cu) wiring.
But consider from the cost angle, still have 0.13UM at present, even the product of 90NM is using the aluminum bronze wiring, this just requires to carry out process optimization on the basis of original metal level deposit, deposition temperature except the raising aluminum bronze chamber of routine, use is to outside the helpful titanium of electromigration chamber configration (IMP/SIP) or the like, and also having a kind of method is the titanium nitride of removing in the adhesive layer, by titanium-aluminium alloy TiAl
3Strengthen the electromigration resisting property of metal level.This method has a drawback, this titanium-aluminium alloy has two challenges for etching, the one, Etch speed can cause photoresist not enough than slow and shakiness, the 2nd, can form more oblique pattern in the metal level bottom behind the Etch, this has bigger risk for this with regard to smaller metal wire/space, tend to run into during reality is produced because this pattern causes the situation of losing, and WAT (Wafer acceptable test-silicon chip electrical property can be accepted test) can't find this problem.
Summary of the invention
Technical problem to be solved by this invention provides a kind of deposition structure of metallic layer that can effectively improve the aluminum bronze electric migration performance.
In order to solve above technical problem, the invention provides a kind of deposition structure of metallic layer of high aluminum bronze electric migration performance, its structural order is ground floor titanium, second layer titanium nitride, the 3rd layer of aluminum bronze, the 4th layer of titanium, layer 5 titanium nitride; It is characterized in that between second layer titanium nitride and the 3rd layer of aluminum bronze, one deck titanium-aluminium alloy being arranged.
Beneficial effect of the present invention is: can effectively improve the deelectric transferred ability of aluminum bronze wiring metal, experimental data according to us shows, adopt the metal level deposit of this structure, do not consider to measure the influence that is brought, electromigration lifetime was improved 6 to 22 years.
The manufacture method of the deposition structure of metallic layer of aforementioned raising aluminum bronze electric migration performance may further comprise the steps:
Step 1, deposit ground floor titanium and second layer titanium nitride;
Step 2, behind the intact second layer titanium nitride that needs of deposit, close nitrogen, in the titanium nitride chamber,, then cavity is vacuumized and silicon chip is taken out at second layer titanium nitride surface deposition one deck titanium;
Step 3, the 3rd layer of aluminum bronze of deposit;
Step 4, the 4th layer of titanium of deposit and layer 5 titanium nitride.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is existing deposition structure of metallic layer schematic diagram;
Fig. 2 is an embodiment of the invention deposition structure of metallic layer schematic diagram.
Embodiment
The embodiment of the invention changes the metal level deposit into titanium/titanium nitride/titanium aluminium alloy/aluminum bronze/titanium/titanium nitride by original titanium/titanium nitride/aluminum bronze/titanium/titanium nitride.
Manufacture method is: step 1, deposit ground floor titanium and second layer titanium nitride;
Step 2, behind the intact second layer titanium nitride that needs of deposit, close nitrogen, in the titanium nitride chamber,, then cavity is vacuumized and silicon chip is taken out at second layer titanium nitride surface deposition one deck titanium;
Step 3, the 3rd layer of aluminum bronze of deposit;
Step 4, the 4th layer of titanium of deposit and layer 5 titanium nitride.
Titanium nitride/titanium wherein all is to grow in the titanium nitride chamber; The thickness of titanium is on 20 dust to the 70 Izod right sides on the titanium nitride.The aluminum bronze cavity temperature is set should be higher than 380C °.
Need control titanium/titanium nitride/titanium aluminium alloy and the upper strata aluminum bronze/titanium/exposure atmosphere time of titanium nitride between two steps, to reduce the oxidized influence that is brought of titanium.The present invention can improve the deelectric transferred ability of aluminum bronze wiring metal, experimental data according to us shows, adopt the metal level deposit of this structure, do not consider to measure the influence that is brought, can make electromigration lifetime improve 6 to 22 years (different products has different influences).
Claims (4)
1. deposition structure of metallic layer that improves the aluminum bronze electric migration performance, its structural order is ground floor titanium, second layer titanium nitride, the 3rd layer of aluminum bronze, the 4th layer of titanium, layer 5 titanium nitride; It is characterized in that between second layer titanium nitride and the 3rd layer of aluminum bronze, one deck titanium-aluminium alloy being arranged.
2. the deposition structure of metallic layer of raising aluminum bronze electric migration performance as claimed in claim 1 is characterized in that, the thickness of described titanium-aluminium alloy between second layer titanium nitride and the 3rd layer of aluminum bronze is between 20 dust to 70 dusts.
3. the manufacture method of the deposition structure of metallic layer of raising aluminum bronze electric migration performance as claimed in claim 1 is characterized in that, may further comprise the steps:
Step 1, deposit ground floor titanium and second layer titanium nitride;
Step 2, behind the intact second layer titanium nitride that needs of deposit, close nitrogen, in the titanium nitride chamber,, then cavity is vacuumized and silicon chip is taken out at second layer titanium nitride surface deposition one deck titanium;
Step 3, the 3rd layer of aluminum bronze of deposit;
Step 4, the 4th layer of titanium of deposit and layer 5 titanium nitride.
4. the manufacture method of the deposition structure of metallic layer of raising aluminum bronze electric migration performance as claimed in claim 3 is characterized in that, in the step 3 during the 3rd layer of aluminum bronze of deposit temperature be higher than 380 degrees centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810043943A CN101740546A (en) | 2008-11-18 | 2008-11-18 | Deposition structure of metallic layer for improving electric migration performance of aluminum and copper and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810043943A CN101740546A (en) | 2008-11-18 | 2008-11-18 | Deposition structure of metallic layer for improving electric migration performance of aluminum and copper and method for manufacturing same |
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| Publication Number | Publication Date |
|---|---|
| CN101740546A true CN101740546A (en) | 2010-06-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN200810043943A Pending CN101740546A (en) | 2008-11-18 | 2008-11-18 | Deposition structure of metallic layer for improving electric migration performance of aluminum and copper and method for manufacturing same |
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| CN (1) | CN101740546A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946235A (en) * | 2017-11-21 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | Improve the method for ultra-thin aluminum bronze roughness of film |
| CN110896063A (en) * | 2016-03-15 | 2020-03-20 | 英飞凌科技股份有限公司 | Semiconductor device including metal adhesion and barrier structures and method of forming the same |
-
2008
- 2008-11-18 CN CN200810043943A patent/CN101740546A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110896063A (en) * | 2016-03-15 | 2020-03-20 | 英飞凌科技股份有限公司 | Semiconductor device including metal adhesion and barrier structures and method of forming the same |
| CN110896063B (en) * | 2016-03-15 | 2024-04-05 | 英飞凌科技股份有限公司 | Semiconductor device including metal adhesion and barrier structures and method of forming the same |
| CN107946235A (en) * | 2017-11-21 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | Improve the method for ultra-thin aluminum bronze roughness of film |
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Open date: 20100616 |