CN101740359B

CN101740359B - Nickel stripping method in method for manufacturing low-temperature polysilicon

Info

Publication number: CN101740359B
Application number: CN2009103110784A
Authority: CN
Inventors: 徐正勋; 李慧元
Original assignee: Sichuan CCO Display Technology Co Ltd
Current assignee: Sichuan CCO Display Technology Co Ltd
Priority date: 2009-12-08
Filing date: 2009-12-08
Publication date: 2011-11-23
Anticipated expiration: 2029-12-08
Also published as: CN101740359A

Abstract

The invention provides a nickel stripping method in a low-cost method for manufacturing low-temperature polysilicon. The nickel stripping method in the method for manufacturing low-temperature polysilicon comprises the following steps: 1) plating a substrate with amorphous silicon through evaporation and then manufacturing an amorphous silicon graph; 2) manufacturing a positive photoresist pattern according to a needed nickel graph; 3) removing photoresist at the edges of the graph through an oxygen ashing process; 4) plating nickel metal through evaporation; and 5) stripping unwanted photoresist and nickel metal. The nickel stripping process of the invention adopts positive photoresist which is much lower in cost compared with negative photoresist, so the method of the invention is low in cost. In addition, as the oxygen ashing process adopted to remove residual photoresist helps to plate the nickel metal through evaporation, the low-temperature polysilicon with good stability and high efficiency for AMOLED can be manufactured.

Description

Make the nickel stripping method in the low temperature polycrystalline silicon method

Technical field

The present invention relates to a kind of manufacture method of polysilicon, particularly relate to a kind of method of utilizing the metal solvent crystallization and make nickel stripping method in the low temperature polycrystalline silicon process.

Background technology

AMOLED compares with PMOLED, have the advantage that power consumption is low, the life-span is long, but the problem of AMOLED maximum is the production technology of polysilicon.Because OLED is a current drives, need to guarantee the uniformity of each pixel polysilicon on the substrate, also to guarantee the uniformity of carrier mobility, threshold voltage etc.Because the carrier mobility height of low temperature polycrystalline silicon, can integrated drive electronics in the panel, therefore making the middle-size and small-size panel of these high-quality must use low temperature polycrystalline silicon.

Method for manufacturing polycrystalline silicon has laser irradiating method, utilizes the method for metal solvent crystallization, continuous crystallisation method etc.Wherein, utilize in the method for metal solvent crystallization, all layer photoetching operations all use positive photoresist to carry out graphics art, and nickel is peeled off and adopted negative photoresist to carry out the cost height.

Summary of the invention

Technical problem to be solved by this invention provides the nickel stripping method in the low making low temperature polycrystalline silicon method of a kind of cost.

The technical scheme that technical solution problem of the present invention is adopted is: make the nickel stripping method in the low temperature polycrystalline silicon method, this method may further comprise the steps: 1) make the amorphous silicon figure behind evaporation amorphous silicon on the substrate; 2) according to needed nickel figure, carry out the making of positive photoresist pattern; 3) remove the photoresist of pattern edge by oxygen ashing process; 4) evaporation nickel metal; 5) with photoresist and the nickel metal-stripping do not wanted.

The invention has the beneficial effects as follows: nickel stripping process of the present invention adopts positive photoresist, and positive photoresist is compared with negative photoresist, and cost is much lower, and therefore method cost of the present invention is low; And owing to adopt oxygen ashing process to remove residual photoresist, help the evaporation of nickel metal, can produce the low temperature polycrystalline silicon that good security, AMOLED that efficient is high are used.

Description of drawings

Fig. 1 is the schematic diagram of the step 1 of prior art.

Fig. 2 is the schematic diagram of the step 2 of prior art.

Fig. 3 is the schematic diagram of the step 3 of prior art.

Fig. 4 is the schematic diagram of the step 4 of prior art.

Fig. 5 is the schematic diagram of step 2 of the present invention.

Fig. 6 is the schematic diagram of step 3 of the present invention.

Fig. 7 is the schematic diagram of step 4 of the present invention.

Embodiment

The nickel stripping method that the present method of utilizing the metal solvent crystallization is made in the low temperature polycrystalline silicon process is:

1) evaporation 600-1000 on substrate 1

Make amorphous silicon figure 2 behind the amorphous silicon of (1/10th nanometers), as shown in Figure 1;

2) according to needed nickel figure, carry out the making of negative photoresist pattern 3, as shown in Figure 2;

3) evaporation 50-100

Nickel metal 4, as shown in Figure 3;

4) with photoresist and the nickel metal-stripping do not wanted, as shown in Figure 4.

Nickel stripping method of the present invention is as follows:

1) evaporation 600-1000 on substrate 1

Amorphous silicon after make amorphous silicon figure 2, as shown in Figure 1;

2) according to needed nickel figure, carry out the making of positive photoresist pattern 5, as shown in Figure 5;

3) remove the photoresist of pattern edge by oxygen ashing process, as shown in Figure 6;

4) evaporation 50-100

Nickel metal 4, as shown in Figure 7;

5) with photoresist and the nickel metal-stripping do not wanted, as shown in Figure 4.

Wherein, oxygen ashing process is that a kind of existing plasma etching apparatus that utilizes carries out etched technology, and plasma etching apparatus of the present invention vacuumizes the radio-frequency power supply that 200W is adopted in the back, and oxygen is with 50cm ³The flow of/minute kind injects, and carries out plasma treatment, not only can etch away corresponding photoresist, but also can dispose the remaining photoresist of substrate surface neatly.

Claims

1. make the nickel stripping method in the low temperature polycrystalline silicon method, it is characterized in that this method may further comprise the steps:

1) after going up the evaporation amorphous silicon, makes by substrate (1) amorphous silicon figure (2);

2) according to needed nickel figure, carry out the making of positive photoresist pattern (5);

3) remove the photoresist of pattern edge by oxygen ashing process;

4) evaporation nickel metal (4);

5) with photoresist and the nickel metal-stripping do not wanted.

2. the nickel stripping method in the making low temperature polycrystalline silicon method as claimed in claim 1 is characterized in that the thickness of the described evaporation amorphous silicon of step 1 is 600-1000

3. the nickel stripping method in the making low temperature polycrystalline silicon method as claimed in claim 1, it is characterized in that, the described oxygen ashing process of step 3 is to utilize plasma etching apparatus to carry out etching, and plasma etching apparatus vacuumizes the radio-frequency power supply that 200W is adopted in the back, and oxygen is with 50cm ³/ minute flow inject, carry out plasma treatment.

4. the nickel stripping method in the making low temperature polycrystalline silicon method as claimed in claim 1 is characterized in that the thickness of the described evaporation nickel of step 4 metal (4) is 50-100