CN103205687B - Vapor deposition mask plate and preparation method thereof - Google Patents
Vapor deposition mask plate and preparation method thereof Download PDFInfo
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- CN103205687B CN103205687B CN201210010709.0A CN201210010709A CN103205687B CN 103205687 B CN103205687 B CN 103205687B CN 201210010709 A CN201210010709 A CN 201210010709A CN 103205687 B CN103205687 B CN 103205687B
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- mask plate
- half groove
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- auxiliary pattern
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Abstract
The present invention relates to a kind of mask plate for evaporation and comprise main graphic region, auxiliary pattern region and half groove, half groove is four limit grooves, and the etching depth h of half groove is the 40%-60% of mask plate thickness H; Wire diameter≤the 2mm of half groove.Mask plate that the present invention relates to and preparation method thereof, when removing auxiliary pattern, does not need other auxiliary meanss, just can successfully be peeled off from main graphic region by auxiliary pattern, and it is high to peel off quality; Mask plate outer rim neat in edge Glabrous thorn after stripping, can not cause position deviation during outer rim contraposition; Also can not destroy mask frame, can evaporating quality be improved.
Description
Technical field
The present invention relates to a kind of Vapor deposition mask plate and preparation method thereof, be specifically related to the making method of mask plate half groove.
Background technology
Organic EL display panel has by the organic EL(OrganicElectro-Luminescence:OEL of the low molecule of the luminescence by auxiliary voltage, organic illuminating electronic plate) material formed organic luminous layer, organic EL display panel is generally manufactured by following manner: form transparent electrode layer on the transparent substrate; This transparent electrode layer is formed the organic luminous layer formed by low molecule organic EL Material; This organic luminous layer forms metal electrode layer.In the manufacturing process of this organic EL display panel, transparent electrode layer forms the evaporation metal mask that organic luminous layer adopts the multiple trickle through hole with predetermined pattern usually, and by low molecule organic EL Material evaporation on substrate.
This display of organic electroluminescence comprises Organnic electroluminescent device, and Organnic electroluminescent device has and is stacked on suprabasil anode, organic material layer and negative electrode respectively.Organic material layer comprises organic emission layer, the laser that organic emission layer obtains due to compound hole and electronics and luminous.In addition, in order to hole and electronics are transferred to emission layer stably and improve emission efficiency, electron injecting layer and electron transfer layer can be arranged between negative electrode and organic emission layer, and hole injection layer and hole transmission layer can be arranged between anode and organic emission layer.
Usually, the chemical Vapor deposition process by the physical vaporous depositions such as such as vacuum moulding machine, ion plating, sputtering and employing meteoropathic reaction manufactures the Organnic electroluminescent device with this structure.When manufacturing Organnic electroluminescent device by these methods, the mask needing to have predetermined pattern is with at the stacking organic material layer in correct position.Due in traditional technology, when being fixed on mask frame by mask plate, mask is by export-oriented pulling force, therefore will at the rim charge Design assistant figure of mask plate in order to apply pulling force, finally the rim charge of the mask plate after fixing will be removed cutting.
Reduce with scissors, then there is not neat, the inaesthetic problem of outward appearance in the limit of reducing, some are carried out to the situation of contraposition by mask plate outer rim, and the unfairness of outer rim must cause position deviation during contraposition; Pass through laser cutting parameter, although the effect of auxiliary pattern and mask plate main graphic region disconnecting also can be reached, but laser can destroy mask frame, its surface is made to produce groove cut, can remain in groove by organic material particles again in evaporate process, cause the crossed contamination between different evaporation chamber.
Summary of the invention
The object of this invention is to provide a kind of Vapor deposition mask plate and preparation method thereof, mask plate outer rim in prior art can be solved and there is not neat, the inaesthetic problem of outward appearance, and when removing auxiliary pattern, do not need other auxiliary meanss, just can successfully auxiliary pattern be peeled off from main graphic region, and it is high to peel off quality; Position deviation can not be caused during mask plate outer rim contraposition after stripping; Also can not destroy mask frame, can evaporating quality be improved.
For above technical problem, the present invention proposes following technical scheme:
A kind of Vapor deposition mask plate, comprising: main graphic region, have the opening meeting evaporation requirement, main graphic opening size is in the scope of 30-180 μm; Auxiliary pattern region, for providing the point of application of pulling force; It is characterized in that, mask plate also has half groove, and half groove connects main graphic region, while connect auxiliary pattern region.
Preferably, half groove is four limit grooves.
Preferably, the etching depth h of half groove is the 40%-60% of mask plate thickness H.
Preferably, the wire diameter≤2mm of half groove.
Preferably, the material of this mask plate is Rhometal, pure nickel or stainless steel.
A making method for Vapor deposition mask plate, is characterized in that, carries out following steps: step of membrane sticking, at the etching face pad pasting of mask plate at the mask plate making main graphic region openings and auxiliary pattern opening; Step of exposure; Development step; Etching step; Take off film; It is characterized in that, step of exposure refers to is located by CCD on exposure machine, and black half groove that removes that specified location exposes to the sun is with exterior domain; Development step referred to developing machine, washed away unexposed dry film, i.e. half groove region dry film; Etching step refers to when the non-half groove region of dry film protection, controls etching parameter, etches four limit grooves.
Preferably, etching parameter is specific as follows: etching pressure is 20 ± 1psi; Etching frequency is 10-60Hz; Iron(ic) chloride etching solution proportion is 1.00-1.50g/cm
3.
Vapor deposition mask plate involved in the present invention and preparation method thereof, because half carves connection main graphic region, while connect auxiliary pattern, and the etching depth h of half groove is the 40%-60% of mask plate thickness H.Therefore when removing auxiliary pattern, not needing other auxiliary meanss, just can successfully auxiliary pattern be peeled off from main graphic region, and it is high to peel off quality; Mask plate outer rim neat in edge Glabrous thorn after stripping, can not cause position deviation during outer rim contraposition; Also can not destroy mask frame, can evaporating quality be improved.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 is mask plate one-piece construction figure of the present invention;
Wherein: 11-auxiliary pattern opening, namely stretch tight mesh; 22-main graphic region openings; 33-auxiliary pattern region; 44-main graphic region; 55-half groove.
Fig. 2 is half groove sectional view in mask plate of the present invention;
Wherein: 111-mask plate; 55-half groove.
Fig. 3 is the mask plate of traditional technology;
Wherein: 1-auxiliary pattern region openings, i.e. stripping aperture; 2-main graphic region openings; 3-auxiliary pattern region; 4-main graphic region; 5-cutting baseline.
Embodiment
embodiment 1
The mask plate 111 for evaporation process shown in Fig. 1 and Fig. 2, comprising: main graphic region 44, has the opening 22 meeting evaporation requirement, and main graphic opening size is in the scope of 30 μm; Auxiliary pattern region 33, for providing the point of application of pulling force; Half groove 55, half groove connects main graphic region, while connect auxiliary pattern region; Half groove 55 is four limit grooves; The etching depth h of half groove is 60% of mask plate thickness H; Wire diameter≤the 2mm of half groove.The material of mask plate can be any one in Invar alloy, Rhometal, pure nickel, stainless steel; Mask plate thickness H is at 30 μm.
embodiment 2
For the mask plate 111 of evaporation process, comprising: main graphic region 44, have the opening 22 meeting evaporation requirement, main graphic opening size is in the scope of 180 μm; Auxiliary pattern region 33, for providing the point of application of pulling force; Half groove 55, half groove connects main graphic region, while connect auxiliary pattern region; Half groove 55 is four limit grooves; The etching depth h of half groove is 40% of mask plate thickness H; Wire diameter≤the 2mm of half groove.The material of mask plate can be any one in Invar alloy, Rhometal, pure nickel, stainless steel; Mask plate thickness H is at 200 μm.
embodiment 3
Make the method for mask plate, carry out following steps at the mask plate making main graphic region openings and auxiliary pattern opening: step of membrane sticking, at the etching face pad pasting of mask plate; Step of exposure, exposure machine is located by CCD, and black half groove that removes that specified location exposes to the sun is with exterior domain; Development step, referred to developing machine, washed away unexposed dry film, i.e. half groove region dry film; Etching step, when the non-half groove region of dry film protection, controls etching parameter, etches four limit grooves; Take off film.
Etching parameter is specific as follows: etching pressure is 20 ± 1psi; Etching frequency is 10Hz; Iron(ic) chloride etching solution proportion is 1.00g/cm
3.
embodiment 4
Make the method for mask plate, carry out following steps at the mask plate making main graphic region openings and auxiliary pattern opening: step of membrane sticking, at the etching face pad pasting of mask plate; Step of exposure, exposure machine is located by CCD, and black half groove that removes that specified location exposes to the sun is with exterior domain; Development step, referred to developing machine, washed away unexposed dry film, i.e. half groove region dry film; Etching step, when the non-half groove region of dry film protection, controls etching parameter, etches four limit grooves; Take off film.
Etching parameter is specific as follows: etching pressure is 20 ± 1psi; Etching frequency is 60Hz; Iron(ic) chloride etching solution proportion is 1.50g/cm
3.
Make this kind four limit groove between the main graphic region 44 and auxiliary pattern region 33 of mask plate after, due to the very thin thickness of half groove, only need apply power at auxiliary pattern region place, can easily by itself and main graphic region disconnecting, mask plate outer rim after stripping is neatly smooth, can not position deviation be caused during outer rim contraposition, can not mask frame be destroyed, improve evaporating quality.
Above embodiment object is the present invention is described, but not limits the scope of the invention, and all simple transformation made under the condition without prejudice to spiritual principles of the present invention all fall within the scope of protection of the present invention.
Claims (7)
1. a Vapor deposition mask plate, comprising: main graphic region, has the opening meeting evaporation requirement, and main graphic opening size is in the scope of 30-180 μm; Auxiliary pattern region, for providing the point of application of pulling force; It is characterized in that, mask plate also has half groove, and half groove connects main graphic region, while connect auxiliary pattern region.
2. mask plate according to claim 1, is characterized in that, described half groove is four limit grooves.
3. mask plate according to claim 1, is characterized in that, the etching depth h of described half groove is the 40%-60% of mask plate thickness H.
4. the mask plate according to claim 1,2 or 3, is characterized in that, the wire diameter≤2mm of described half groove.
5. the mask plate according to claim 1,2 or 3, is characterized in that, the material of this mask plate is Rhometal, pure nickel or stainless steel.
6. a making method for Vapor deposition mask plate, is characterized in that, carries out following steps: step of membrane sticking, at the etching face pad pasting of mask plate at the mask plate making main graphic region openings and auxiliary pattern opening; Step of exposure; Development step; Etching step; Take off film; It is characterized in that, step of exposure refers to is located by CCD on exposure machine, and black half groove that removes that specified location exposes to the sun is with exterior domain; Development step referred to developing machine, washed away unexposed dry film, i.e. half groove region dry film; Etching step refers to when the non-half groove region of dry film protection, controls etching parameter, etches four limit grooves.
7. the making method of Vapor deposition mask plate according to claim 6, is characterized in that, etching parameter is specific as follows: etching pressure is 20 ± 1psi; Etching frequency is 10-60Hz; Iron(ic) chloride etching solution proportion is 1.00-1.50g/cm
3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210010709.0A CN103205687B (en) | 2012-01-16 | 2012-01-16 | Vapor deposition mask plate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210010709.0A CN103205687B (en) | 2012-01-16 | 2012-01-16 | Vapor deposition mask plate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN103205687A CN103205687A (en) | 2013-07-17 |
| CN103205687B true CN103205687B (en) | 2016-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210010709.0A Expired - Fee Related CN103205687B (en) | 2012-01-16 | 2012-01-16 | Vapor deposition mask plate and preparation method thereof |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104419890B (en) * | 2013-08-20 | 2018-04-27 | 昆山允升吉光电科技有限公司 | A kind of mask assembly |
| KR102321378B1 (en) * | 2014-10-31 | 2021-11-04 | 삼성디스플레이 주식회사 | Mask for deposition, mask frame assembly for deposition, manufacturing method of the same |
| CN207009484U (en) * | 2017-07-28 | 2018-02-13 | 昆山维信诺科技有限公司 | Mask plate |
| CN109207920B (en) * | 2018-11-12 | 2021-02-09 | 京东方科技集团股份有限公司 | Mask plate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1384696A (en) * | 2001-03-30 | 2002-12-11 | 三洋电机株式会社 | Semiconductor device and semiconductor device making mask |
| CN1620203A (en) * | 2003-11-17 | 2005-05-25 | 精工爱普生株式会社 | Mask, display, organic electroluminescent display and mfg. method thereof |
| CN202688415U (en) * | 2012-01-16 | 2013-01-23 | 昆山允升吉光电科技有限公司 | Vapor plating mask plate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004183044A (en) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | Mask vapor deposition method and apparatus, mask and mask manufacturing method, display panel manufacturing apparatus, display panel and electronic equipment |
| JP4089632B2 (en) * | 2003-03-07 | 2008-05-28 | セイコーエプソン株式会社 | Mask manufacturing method, mask manufacturing apparatus, and film forming method of light emitting material |
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2012
- 2012-01-16 CN CN201210010709.0A patent/CN103205687B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1384696A (en) * | 2001-03-30 | 2002-12-11 | 三洋电机株式会社 | Semiconductor device and semiconductor device making mask |
| CN1620203A (en) * | 2003-11-17 | 2005-05-25 | 精工爱普生株式会社 | Mask, display, organic electroluminescent display and mfg. method thereof |
| CN202688415U (en) * | 2012-01-16 | 2013-01-23 | 昆山允升吉光电科技有限公司 | Vapor plating mask plate |
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| CN103205687A (en) | 2013-07-17 |
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