CN101740342B - Carbon dioxide supercritical fluid semiconductor cleaning equipment - Google Patents
Carbon dioxide supercritical fluid semiconductor cleaning equipment Download PDFInfo
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- CN101740342B CN101740342B CN2008102274852A CN200810227485A CN101740342B CN 101740342 B CN101740342 B CN 101740342B CN 2008102274852 A CN2008102274852 A CN 2008102274852A CN 200810227485 A CN200810227485 A CN 200810227485A CN 101740342 B CN101740342 B CN 101740342B
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- carbon dioxide
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title claims abstract description 160
- 239000001569 carbon dioxide Substances 0.000 title claims abstract description 92
- 229910002092 carbon dioxide Inorganic materials 0.000 title claims abstract description 92
- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000012530 fluid Substances 0.000 title claims abstract description 32
- 238000000926 separation method Methods 0.000 claims abstract description 49
- 239000007788 liquid Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000002699 waste material Substances 0.000 claims abstract description 15
- 239000012459 cleaning agent Substances 0.000 claims abstract description 12
- 239000006184 cosolvent Substances 0.000 claims abstract description 12
- 238000000352 supercritical drying Methods 0.000 claims abstract description 6
- 239000003960 organic solvent Substances 0.000 claims abstract description 5
- 238000007599 discharging Methods 0.000 claims description 9
- 238000005057 refrigeration Methods 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 10
- 239000002245 particle Substances 0.000 abstract description 6
- 238000003860 storage Methods 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 3
- 239000005431 greenhouse gas Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract 2
- 239000013043 chemical agent Substances 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000004064 recycling Methods 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 241000283086 Equidae Species 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002309 gasification Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- -1 isopropyl alcohols Chemical class 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009967 tasteless effect Effects 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a carbon dioxide supercritical fluid semiconductor cleaning device which is used for waterless cleaning of semiconductor silicon wafers. The equipment comprises a main working chamber for supercritical fluid cleaning and supercritical drying, a separation chamber for separating carbon dioxide and cleaning waste liquid, a temporary storage tank for storing cleaning agents and cosolvent for enhancing the cleaning effect, a carbon dioxide circulation control system for compressing, radiating and storing the carbon dioxide and the like. The parts are connected through a pipeline with a valve. Under the coordination of a small amount of organic solvent, carbon dioxide superfluid without surface tension is taken as a cleaning medium and rinsing liquid, and goes deep into tiny pores to obtain good cleaning and drying effects. The equipment provided by the invention avoids the large consumption of pure water and pollution caused by chemical agents, solves the problems of structural deformation, particle adsorption and the like caused by surface tension in the traditional process, and reduces the large emission of greenhouse gases due to the recycling of carbon dioxide.
Description
Technical field
The present invention relates to the anhydrous cleaning technique of the semi-conductor silicon chip field in the semiconductor fabrication, relate in particular to a kind of carbon dioxide supercritical fluid semiconductor cleaning equipment, utilize the above-critical state carbon dioxide not have the anhydrous cleaning of capillary characteristics realization semi-conductor silicon chip.
Background technology
Along with the progress of microelectric technique, the integrated level of chip improves constantly, and the yardstick of components and parts constantly dwindles, and is correspondingly also more and more higher to the requirement of silicon chip cleanliness factor.Because the residual contaminants of silicon chip surface and impurity can cause circuit or device architecture to lose efficacy, so need to carry out a large amount of cleanings in manufacture process.The so-called cleaning is meant and effectively removes all kinds of pollutions under the prerequisite of not destroying silicon chip surface electrical characteristics and device architecture.
In traditional cleaning technique, no matter be that wet-cleaned or dry method are cleaned, finally all to use a large amount of high purity waters to wash, again with dry silicon chip surfaces such as isopropyl alcohols.The problem that derives thus is a large amount of consumption of water resources, chip that chemical reagent causes and the pollution of environment, and micro-structural adhesion that the surface tension of gas-liquid interface causes in the dry run and particle absorption.And the restriction of liquid body surface tension and viscosity, the conventional clean technology can't effectively be cleaned micro-pore.Along with semiconductor technology extends to littler process node, it is unable to do what one wishes that conventional clean becomes gradually.
The above-critical state carbon dioxide has characteristics such as low viscosity, high diffusibility, low surface tension, close organic property, can go deep into micro-pore cleans, avoided the required subsequent treatment of the consumption of a large amount of pure water and conventional clean technology (comprising the processing of waste liquid and drying etc.), satisfy the requirement of silicon chip high aspect ratio structure of new generation, also reduced the pressure of semi-conductor industry greatly resource and environment.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of carbon dioxide supercritical fluid semiconductor cleaning equipment, to overcome the difficulty of conventional clean, solve a large amount of water consumptions of conventional clean, contaminated environment, can't go deep into micro-pore and clean and clean problems such as structure cohesion that the back drying causes and particle absorption, satisfy the requirement of new generation of semiconductor technology.
(2) technical scheme
For achieving the above object, the invention provides a kind of carbon dioxide supercritical fluid semiconductor cleaning equipment, this equipment comprises temporary jar 4 of main operating room 1, separation chamber 3, cleaning agent and cosolvent, temperature and control pressurer system 7 and carbon dioxide cyclic control system 8, wherein
Main operating room 1, the supercritical fluid that is used for semi-conductor silicon chip cleans and supercritical drying, be fixed on the bearing 10, this 1 inside, main operating room is equipped with temperature sensor 106 and pressure sensor 107, and the temperature of chamber interior is subjected to the control of temperature and control pressurer system 7;
Temporary jar 4 of cleaning agent and cosolvent are used to deposit the auxiliary organic solvent that cleans, and the pipeline 402 by charged magnet valve 403 links to each other with the carbon dioxide inlet duct 103 of main operating room 1;
Temperature and control pressurer system 7 are used for the temperature of main operating room 1 and separation chamber's 3 chamber interior is controlled;
Carbon dioxide cyclic control system 8, be used to realize the carbon dioxide loop control work of complete equipment, be fixed on the bearing 10, constitute by liquid CO 2 air accumulator and compressor, carbon dioxide is compressed, dispels the heat and stores, finish the refrigeration task of main operating room 1 and separation chamber 3 simultaneously;
Liquid CO 2 in the described carbon dioxide cyclic control system 8 flows in cleaning loop and refrigeration work loop respectively; Described cleaning loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system 8, gets back to the air accumulator of carbon dioxide cyclic control system 8 via the compressor of main operating room feed tube 103, main operating room 1, main operating room discharging tube 104, separation chamber 3, separation chamber's blast pipe 301, carbon dioxide cyclic control system 8; Described refrigeration work loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system 8, gets back to the air accumulator of carbon dioxide cyclic control system 8 behind the compressor via heat exchanger coils 5 and carbon dioxide cyclic control system 8.
In the such scheme, there is the horse 2 that holds silicon chip the inside of described main operating room 1, outside by the main operating room heat exchange coil 5 that is used to freeze around, heater strip is arranged at the bottom.
In the such scheme, 1 top, described main operating room is provided with high pressure sealing lid 101, is used to guarantee that main operating room 1 has good airtight performance.
In the such scheme, described silicon chip frame 2 is used to hold the silicon chip of plurality of specifications.
In the such scheme, the inside of described separation chamber 3 is equipped with separation chamber's temperature sensor 303 and separation chamber's pressure sensor 304, outside by the separation chamber's heat exchange coil 6 that is used to freeze around.
In the such scheme, there is the cleaning waste liquid row of band hand switch 901 described separation chamber 3 from pipe 9
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect
(1) carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention belongs to anhydrous cleaning equipment, has avoided a large amount of consumption of high purity water, has overcome the difficulty of a large amount of water consumptions of semi-conductor industry.
(2) carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention adopts the above-critical state carbon dioxide as cleaning medium, has avoided a large amount of uses of chemicals such as corrosivity, inflammability and organic solvent in the conventional clean process.On the one hand, reduced and handled the cost that cleans waste liquid, reduced pollution on the other hand, strengthened safety of operators simultaneously environment.
(3) carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention, adopt the above-critical state carbon dioxide as cleaning medium, utilized supercritical fluid not have capillary characteristics, going deep into micro-pore cleans, solved the difficult situation that the conventional clean medium can't deeply effectively clean to micro-structure owing to surface tension, thereby be more suitable in the requirement of new generation of semiconductor manufacturing technology.
(4) carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention, after cleaning is finished, use the above-critical state carbon dioxide as rinsing liquid, after fully replacing with cleaning fluid, wafer after cleaning is implemented supercritical drying, avoided the conventional clean technology final when dry because gas---the problems such as fatal absorption of structure cohesion, figure deformation and particle that the great surface tension in liquid interface causes.
(5) carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention, the use carbon dioxide freezes and cleans.Carbon dioxide is nonpoisonous and tasteless, it is not combustion-supporting not burn yet, and chemical property is stable, and its critical temperature is lower, satisfies the Technology Need of thermally sensitive circuit or structure.Simultaneously, the carbon dioxide that this equipment uses does not efflux, but recycles after the overcompression heat radiation, has avoided the discharging of greenhouse gas, can not bring any pressure to environment.
Description of drawings
Fig. 1 is a carbon dioxide supercritical fluid semiconductor cleaning equipment structural representation provided by the invention;
Fig. 2 is a main operating room schematic diagram in the carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention;
Fig. 3 is separation chamber's schematic diagram in the carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention;
Fig. 4 is cleaning agent and a cosolvent temporary storage cavity structural representation in the carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention;
Fig. 5 is the structural representation of silicon chip frame in the carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention;
Fig. 6 is a main working chamber high pressure sealing lid schematic diagram in the carbon dioxide supercritical fluid semiconductor cleaning equipment provided by the invention;
Among the figure, main operating room 1, silicon chip frame 2, separation chamber 3, cleaning agent and cosolvent temporary storage cavity 4, main operating room heat exchange coil 5, separation chamber's heat exchange coil 6, temperature and control pressurer system 7, carbon dioxide cyclic control system 8, separation chamber's discharging of waste liquid pipeline 9, bearing 10, main operating room high pressure sealing lid 101, main operating room air inlet pipe electromagnetically operated valve 102, main operating room admission line 103, main operating room discharge duct 104, main operating room blast pipe electromagnetically operated valve 105, main operating room temperature sensor 106, main operating room pressure sensor 107,202,4 inches horses 203 of 201,3 inches horses of 2 inches horses, guiding gutter 204, separation chamber's carbon dioxide discharge duct 301, the temporary jar seal cover 401 of separation chamber's blast pipe electromagnetically operated valve 302 cleaning agents and cosolvent, temporary jar discharging tube 402, temporary storage cavity jar liquid tube valve 403, separation chamber's discharging of waste liquid pipe hand switch 901.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is a carbon dioxide superfluid semiconductor cleaning device structural representation provided by the invention, and this equipment mainly is made up of temporary jar 4 of operating room 1, separation chamber 3, cleaning agent and cosolvent, temperature and control pressurer system 7 and carbon dioxide cyclic control system 8.Wherein, main operating room 1 and separation chamber 3 all are fixed on the bearing 10.
Main operating room 1 links to each other with the carbon dioxide storage tank by main chamber's feed tube 103 of bringing liquid electromagnetic valve 102 into, links to each other with separation chamber 3 by main chamber's discharging tube 104 of being with draining solenoid valve 105; Temporary jar 4 Drainage pipe 402 by band valve 403 links to each other with the input duct 103 of main operating room 1; There is the horse 2 that holds silicon chip to be cleaned 1 inside, main chamber, the main operating room heat exchange coil 5 that the outer disk coiling is colod-application, and the resistance wire of heating usefulness is arranged at the bottom.The temperature of main chamber is measured by main chamber's temperature sensor 106, and whether needs heating or refrigeration by temperature and control pressurer system 7 decisions, to guarantee suitable working temperature; The pressure of main chamber is measured by main chamber's pressure sensor 107.Because this equipment is worked under condition of high voltage, must guarantee good resistance to pressure and the seal of package unit, so having high pressure sealing lid 101, main chamber 1 guarantees good airtight performance.
Main operating room 1 remains liquid environment in cleaning process, gas when preventing to clean---and the surface tension at liquid interface causes small device architecture and figure and damages and to the fatal absorption of impurity particle.
The feed tube of separation chamber 3 links to each other with the discharging tube of main operating room 104, and the compressor in discharge duct 301 and the carbon dioxide cyclic control system 8 links to each other, and waste liquid passing away 9 has manual normally closed switch 901.Separation chamber's heat exchange coil 6 that separation chamber's outer disk coiling is colod-application.After cleaning fluid drains into the separation chamber, make the liquid CO 2 gasification by the cryogenic thermostat step-down, gas phase carbon dioxide is delivered to compressor via blast pipe 9 and is compressed heat radiation, get back to air accumulator, but not the waste liquids such as impurity that the organic solvent of gas phase and cleaning produce are then discharged this equipment by above-mentioned hand switch.
Carbon dioxide cyclic control system 8 comprises carbon dioxide storage tank and compressor two parts, and it is that this cleaning equipment is realized the key structure that carbon dioxide recycles.On the one hand, after the discharge duct 301 of the carbon dioxide that participates in cleaning process by the separation chamber enters compressor and compress heat radiation, return air accumulator; Importing the carbon dioxide that participates in refrigeration in main operating room heat exchange coil 5 and the separation chamber's heat exchange coil 6 on the other hand also recycles by returning air accumulator after the compressor compresses.Do a large amount of consumption of having avoided carbon dioxide in the existing open system like this, thereby solved the pressure of greenhouse gas emission for environment.
When equipment involved in the present invention is applied to the semiconductor wafer cleaning, silicon chip to be cleaned in the main operating room 1 in the silicon chip frame 2 needs to remain liquid environment in cleaning process, prevent gas---adverse consequencess such as particle absorption that the surface tension at liquid interface causes, structure cohesion.Wafer is cleaned as cleaning fluid with the above-critical state carbon dioxide that contains a small amount of cleaning agent and cosolvent earlier, carry out degree of depth rinsing with the above-critical state carbon dioxide again, implement supercritical drying at last.Whole process need is controlled the temperature and pressure of main working chamber 1.The waste liquid that produces in the cleaning process is delivered in the separation chamber 3 and is handled, after separation chamber's 3 cryogenic thermostat step-downs, gas phase carbon dioxide is separated with waste liquid, after separation chamber's discharge duct 301 is by the compressor compresses heat radiation, get back to air accumulator, residual waste solution is then discharged via manual bleed valve.
Concrete job step when using equipment provided by the invention to clean is as follows:
(1) opens the high pressure sealing lid 101 of main operating room 1, take out silicon chip frame 2, silicon chip to be cleaned is placed on the silicon chip frame under the condition that keeps wet environment, send working chamber 1 back to, close high pressure sealing lid 101.
(2) open the temporary jar draining valve 403 of main chamber's liquid inlet electromagnetic valve 102 and cleaning agent and cosolvent, make the mixture of liquid CO 2 and cleaning agent, cosolvent be full of main operating room, the working temperature of maintenance main chamber 1 and pressure are tentatively implemented superfluid to silicon chip and are cleaned greater than the critical temperature and the critical pressure of carbon dioxide.
(3) after preliminary cleaning finishes, open main chamber's draining solenoid valve 105,, cleaning fluid is fully replaced by main chamber's feed tube input liquid CO 2.Cleaning fluid enters the separation chamber by main chamber's discharging tube 104.After displacement is finished, be full of clean liquid CO 2 in the main chamber.
(4) close main chamber's draining solenoid valve 105.Control main chamber temperature and pressure promptly uses the above-critical state carbon dioxide that the wafer after cleaning is carried out degree of depth rinsing in the critical temperature of carbon dioxide with more than the critical pressure.Meanwhile, separation chamber's 3 coolings, under-10 ℃ of conditions, be decompressed to below the boiling temperature of non-carbon dioxide material, have only carbon dioxide to change gas phase in the material in the separation chamber, separate with impure organic liquid waste, discharge the separation chamber by separation chamber's blast pipe 301, return air accumulator via compressor compresses heat radiation back and recycle; Waste liquid then passes through manual bleed valve 901 device for transferring of disengagement chamber.
(5) in the main operating room 1 be after the degree of depth rinse cycle of rinsing liquid finishes in the step 4 with the superfluid, open main chamber's draining solenoid valve, the holding chamber room temperature slowly reduces chamber pressure more than the carbon dioxide critical temperature, silicon chip is implemented supercritical drying, the carbon dioxide direct gasification in the chamber.Atmospheric carbon dioxide returns air accumulator by compressor compresses heat radiation back equally and recycles.
(6) so far, cleaning process finishes.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. carbon dioxide supercritical fluid semiconductor cleaning equipment, it is characterized in that, this equipment comprises main operating room (1), separation chamber (3), cleaning agent and cosolvent temporary jar (4), temperature and control pressurer system (7) and carbon dioxide cyclic control system (8), wherein
Main operating room (1), the supercritical fluid that is used for semi-conductor silicon chip cleans and supercritical drying, be fixed on the bearing (10), this inside, main operating room (1) is equipped with temperature sensor (106) and pressure sensor (107), and the temperature of chamber interior is subjected to the control of temperature and control pressurer system (7);
Separation chamber (3), be used for carbon dioxide and clean separating of waste liquid, be fixed on the bearing (10), the pipeline (104) by charged magnet valve (105) links to each other with main operating room (1), links to each other with carbon dioxide cyclic control system (8) by separation chamber's discharge duct (301);
Temporary jar of cleaning agent and cosolvent (4) are used to deposit the auxiliary organic solvent that cleans, and the pipeline (402) by charged magnet valve (403) links to each other with the carbon dioxide inlet duct (103) of main operating room (1);
Temperature and control pressurer system (7) are used for the temperature of main operating room (1) and separation chamber (3) chamber interior is controlled;
Carbon dioxide cyclic control system (8), be used to realize the carbon dioxide loop control work of complete equipment, be fixed on the bearing (10), constitute by liquid CO 2 air accumulator and compressor, carbon dioxide is compressed, dispels the heat and stores, finish the refrigeration task of main operating room (1) and separation chamber (3) simultaneously;
Liquid CO 2 in the described carbon dioxide cyclic control system (8) flows in cleaning loop and refrigeration work loop respectively; Described cleaning loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system (8), gets back to the air accumulator of carbon dioxide cyclic control system (8) via the compressor of main operating room feed tube (103), main operating room (1), main operating room discharging tube (104), separation chamber (3), separation chamber's blast pipe (301), carbon dioxide cyclic control system (8); Described refrigeration work loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system (8), gets back to the air accumulator of carbon dioxide cyclic control system (8) behind the compressor via heat exchanger coils (5) and carbon dioxide cyclic control system (8).
2. carbon dioxide supercritical fluid semiconductor cleaning equipment according to claim 1, it is characterized in that, there is the horse (2) that holds silicon chip the inside of described main operating room (1), outside by the main operating room heat exchange coil (5) that is used to freeze around, heater strip is arranged at the bottom.
3. carbon dioxide supercritical fluid semiconductor cleaning equipment according to claim 1 is characterized in that, top, described main operating room (1) is provided with high pressure sealing lid (101), is used to guarantee that main operating room (1) has good airtight performance.
4. carbon dioxide supercritical fluid semiconductor cleaning equipment according to claim 1 is characterized in that, described silicon chip frame (2) is used to hold the silicon chip of plurality of specifications.
5. carbon dioxide supercritical fluid semiconductor cleaning equipment according to claim 1, it is characterized in that, the inside of described separation chamber (3) is equipped with separation chamber's temperature sensor (303) and separation chamber's pressure sensor (304), outside by the separation chamber's heat exchange coil (6) that is used to freeze around.
6. carbon dioxide supercritical fluid semiconductor cleaning equipment according to claim 1 is characterized in that, described separation chamber (3) have the cleaning waste liquid row of band hand switch (901) from pipe (9).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008102274852A CN101740342B (en) | 2008-11-26 | 2008-11-26 | Carbon dioxide supercritical fluid semiconductor cleaning equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008102274852A CN101740342B (en) | 2008-11-26 | 2008-11-26 | Carbon dioxide supercritical fluid semiconductor cleaning equipment |
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| CN101740342A CN101740342A (en) | 2010-06-16 |
| CN101740342B true CN101740342B (en) | 2011-08-31 |
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| CN2008102274852A Expired - Fee Related CN101740342B (en) | 2008-11-26 | 2008-11-26 | Carbon dioxide supercritical fluid semiconductor cleaning equipment |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330089B (en) * | 2010-07-14 | 2013-07-17 | 中国科学院微电子研究所 | Silicon chip punching system and method |
| CN102371254B (en) * | 2010-08-11 | 2013-08-14 | 中国科学院微电子研究所 | Cleaning system |
| WO2019031303A1 (en) * | 2017-08-10 | 2019-02-14 | 株式会社フジキン | Fluid supply device and fluid supply method |
| CN108054123A (en) * | 2017-12-25 | 2018-05-18 | 普聚智能系统（苏州）有限公司 | The automatic rinsing table of dry ice |
| CN108598019A (en) * | 2018-04-17 | 2018-09-28 | 德淮半导体有限公司 | Wafer cleaning equipment and its cleaning method |
| CN112017998B (en) * | 2020-07-21 | 2021-12-21 | 中国科学院微电子研究所 | Carbon dioxide supply system and semiconductor cleaning system with same |
| CN112974412A (en) * | 2021-02-23 | 2021-06-18 | 中国核动力研究设计院 | Chemical decontamination method and device for radioactive pollution by supercritical carbon dioxide |
| CN114388995A (en) * | 2021-12-29 | 2022-04-22 | 深圳赛骄阳能源科技股份有限公司 | Carbon dioxide supercritical cleaning method for cylindrical lithium ion battery |
| CN114078692B (en) * | 2022-01-07 | 2024-02-20 | 浙江大学杭州国际科创中心 | Wafer cleaning method and wafer cleaning equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1362296A (en) * | 2001-01-04 | 2002-08-07 | 财团法人金属工业研究发展中心 | Low cost scrubbing system for liquefiable gas |
| CN1514474A (en) * | 2002-12-31 | 2004-07-21 | 台湾积体电路制造股份有限公司 | System and technological process capable of removing copper oxide and water vapour on semiconductor crystal chip surface |
| CN1779920A (en) * | 2003-12-16 | 2006-05-31 | 气体产品与化学公司 | Method of Processing semiconductor components with dense processing fluids and ultrasonic energy |
| CN101275806A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Carbon dioxide supercritical drying device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1362296A (en) * | 2001-01-04 | 2002-08-07 | 财团法人金属工业研究发展中心 | Low cost scrubbing system for liquefiable gas |
| CN1514474A (en) * | 2002-12-31 | 2004-07-21 | 台湾积体电路制造股份有限公司 | System and technological process capable of removing copper oxide and water vapour on semiconductor crystal chip surface |
| CN1779920A (en) * | 2003-12-16 | 2006-05-31 | 气体产品与化学公司 | Method of Processing semiconductor components with dense processing fluids and ultrasonic energy |
| CN101275806A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Carbon dioxide supercritical drying device |
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