CN101452820A - Semiconductor cleaning equipment using green carbon monoxide super fluid - Google Patents
Semiconductor cleaning equipment using green carbon monoxide super fluid Download PDFInfo
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- CN101452820A CN101452820A CNA2007101787743A CN200710178774A CN101452820A CN 101452820 A CN101452820 A CN 101452820A CN A2007101787743 A CNA2007101787743 A CN A2007101787743A CN 200710178774 A CN200710178774 A CN 200710178774A CN 101452820 A CN101452820 A CN 101452820A
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Abstract
The invention discloses cleaning equipment for a green carbon dioxide superfluid semiconductor, which is used for water-free cleaning of a semiconductor chip. The equipment mainly comprises a main working cavity (for superfluid cleaning and supercritical drying) with temperature and pressure control, a separating cavity for separating carbon dioxide and cleaning waste liquor, a temporary storage cavity for storing cleaning agent and latent solvent for reinforcing cleaning effect, a carbon dioxide cycle control system for compressing, radiating and storing carbon dioxide, and the like. All parts are connected through pipelines with valves. Under cooperation of small amount of organic solvent, carbon dioxide superfluid without surface tension is used as cleaning medium and rinsing liquor to deeply penetrate micro pores so as to obtain good cleaning effect. The cleaning equipment avoids large consumption of purified water and pollution caused by chemical agent, solves the problems of structural distortion caused by the surface tension, granular adsorption and the like in the prior art, and reduces massive discharge of greenhouse gases by cycle usage of the carbon dioxide.
Description
Technical field
The present invention relates to the anhydrous cleaning technique of the semiconductor wafer field in the semiconductor fabrication, relate in particular to a kind of semiconductor cleaning equipment using green carbon monoxide super fluid, utilize the above-critical state carbon dioxide not have the anhydrous cleaning of capillary characteristics realization semiconductor wafer.
Background technology
Along with the progress of microelectric technique, the integrated level of semiconductor circuit improves constantly, and the yardstick of components and parts constantly dwindles, and is correspondingly also more and more higher to the requirement of wafer cleanliness factor.Can cause circuit or device architecture to lose efficacy because remain in the pollutant and the impurity of wafer surface, so in manufacture process, need a large amount of cleanings.The so-called cleaning is meant and effectively removes all kinds of pollutions under the prerequisite of not destroying the crystal column surface electrical characteristics.
In traditional cleaning technique, no matter be that wet-cleaned or dry method are cleaned, finally all to use a large amount of high purity waters to wash, again with drying crystal wafer surfaces such as isopropyl alcohols.The problem that derives thus is a large amount of consumption of water resources, chip that chemical reagent causes and the pollution of environment, and dry run the micro-structural adhesion and the particle absorption that cause.And the restriction of liquid body surface tension and viscosity, the conventional clean technology can't be goed deep into micro-pore and effectively clean.Along with semiconductor technology extends to littler process node, it is unable to do what one wishes that conventional clean becomes gradually.
The above-critical state carbon dioxide has characteristics such as low viscosity, high diffusibility, low surface tension, close organic property, can go deep into micro-pore cleans, avoided the required subsequent treatment of the consumption of a large amount of pure water and conventional clean technology (comprising the processing of waste liquid and drying etc.), satisfy the requirement of wafer high aspect ratio structure of new generation, also reduced pressure greatly resource and environment.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of semiconductor cleaning equipment using green carbon monoxide super fluid, to overcome the difficulty of conventional clean, need drying and can't go deep into the problem that micro-pore cleans after solving a large amount of water consumptions of conventional clean, contaminated environment, cleaning, satisfy the requirement of new generation of semiconductor technology.
(2) technical scheme
For achieving the above object, the invention provides a kind of semiconductor cleaning equipment using green carbon monoxide super fluid, this equipment comprises main working chamber 1, disengagement chamber 3, cleaning agent and cosolvent temporary storage cavity 4, temperature control system 7 and carbon dioxide cyclic control system 8, wherein,
Described main working chamber 1, the superfluid that is used for semiconductor wafer cleans and drying, be fixed on the bearing 6, this main working chamber bottom is equipped with the temperature sensor 106 and the pressure sensor 107 of temperature control system 7, and the temperature of chamber interior is subjected to the control of temperature control system 7;
Disengagement chamber 3 is used for carbon dioxide and cleans separating of waste liquid, is fixed on the bearing 6, and the pipeline 104 by charged magnet valve 105 links to each other with main working chamber 1, links to each other with carbon dioxide cyclic control system 8 by disengagement chamber discharge duct 9;
Cleaning agent and cosolvent temporary storage cavity 4 are used to deposit the auxiliary organic solvent that cleans, and the pipeline 402 by charged magnet valve 403 links to each other with the carbon dioxide inlet duct 103 of main working chamber 1;
Carbon dioxide cyclic control system 8, be used to realize the carbon dioxide loop control work of complete equipment, be fixed on the bearing 6, constitute by liquid CO 2 air accumulator and compressor, carbon dioxide is compressed, dispels the heat and stores, finish the refrigeration task of main working chamber 1 simultaneously.
In the such scheme, there is the silicon chip frame 2 that holds wafer the inside of described main working chamber 1, outside by the heat exchange coil 5 that is used to freeze around, heater strip is arranged at the bottom.
In the such scheme, described main working chamber 1 top is provided with high pressure sealing lid 101, guarantees that main working chamber 1 has good airtight performance.
In the such scheme, the liquid CO 2 in the described carbon dioxide cyclic control system 8 flows in cleaning loop and refrigeration work loop respectively;
Described cleaning loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system 8, gets back to the air accumulator of carbon dioxide cyclic control system 8 via the compressor of main working chamber feed tube 103, main working chamber 1, main working chamber discharging tube 104, disengagement chamber 3, disengagement chamber blast pipe 9, carbon dioxide cyclic control system 8;
Described refrigeration work loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system 8, gets back to the air accumulator of carbon dioxide cyclic control system 8 behind the compressor via heat exchanger coils 5 and carbon dioxide cyclic control system 8.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect
(1) semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention belongs to anhydrous cleaning equipment, has avoided a large amount of consumption of high purity water, has overcome the difficulty of a large amount of water consumptions of semi-conductor industry.
(2) semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention adopts the above-critical state carbon dioxide as cleaning medium, has avoided a large amount of uses of chemicals such as corrosivity, inflammability and organic solvent in the conventional clean process.On the one hand, reduced and handled the cost that cleans waste liquid, reduced pollution on the other hand, strengthened safety of operators simultaneously environment.
(3) semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention, adopt the above-critical state carbon dioxide as cleaning medium, utilized supercritical fluid not have capillary characteristics, going deep into micro-pore cleans, solved the difficult situation that the conventional clean medium can't deeply effectively clean to micro-structure owing to surface tension, thereby be more suitable in the requirement of new generation of semiconductor manufacturing technology.
(4) semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention, after cleaning is finished, use the above-critical state carbon dioxide as rinsing liquid, after fully replacing with cleaning fluid, wafer after cleaning is implemented supercritical drying, avoided the conventional clean technology final when dry because gas---the problems such as fatal absorption of structure cohesion, figure deformation and particle that the great surface tension in liquid interface causes.
(5) semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention, the use carbon dioxide freezes and cleans.Carbon dioxide is nonpoisonous and tasteless, it is not combustion-supporting not burn yet, and chemical property is stable, and its critical temperature is lower, satisfies the Technology Need of thermally sensitive circuit or structure.Simultaneously, the carbon dioxide that this equipment uses does not efflux, but recycles after the overcompression heat radiation, has avoided the discharging of greenhouse gas, can not bring any pressure to environment.
Description of drawings
Fig. 1 is a semiconductor cleaning equipment using green carbon monoxide super fluid structural representation provided by the invention;
Fig. 2 is a main working chamber schematic diagram in the semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention;
Fig. 3 is cleaning agent and a cosolvent temporary storage cavity structural representation in the semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention;
Fig. 4 is the structural representation of silicon chip frame in the semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention;
Fig. 5 is a main working chamber high pressure sealing lid schematic diagram in the semiconductor cleaning equipment using green carbon monoxide super fluid provided by the invention;
Among the figure, main working chamber 1, silicon chip frame 2, disengagement chamber 3, cleaning agent and cosolvent temporary storage cavity 4, main working chamber heat exchange coil 5, bearing 6, temperature control system 7, carbon dioxide cyclic control system 8, disengagement chamber discharge duct 9, main working chamber high pressure sealing lid 101, main working chamber air inlet pipe electromagnetically operated valve 102, main working chamber admission line 103, main working chamber discharge duct 104, main working chamber blast pipe electromagnetically operated valve 105, temperature sensor 106, pressure sensor 107, cleaning agent and cosolvent temporary storage cavity seal cover 401, temporary storage cavity discharging tube 402, temporary storage cavity discharging tube valve 403.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is a semiconductor cleaning equipment using green carbon monoxide super fluid structural representation provided by the invention, and this equipment mainly is made up of working chamber 1, disengagement chamber 3, cleaning agent and cosolvent temporary storage cavity 4, temperature control system 7 and carbon dioxide cyclic control system 8.Wherein, main working chamber 1, disengagement chamber 3 and carbon dioxide cyclic control system 8 all are fixed on the bearing 6.
Main working chamber links to each other with the carbon dioxide storage tank by the main chamber feed tube 103 of bringing liquid electromagnetic valve 102 into, links to each other with disengagement chamber 3 by the main chamber discharging tube 104 of being with draining solenoid valve 105; Temporary storage cavity 4 links to each other with the input duct 103 of main working chamber 1 by the Drainage pipe 402 of band valve 403; There is the silicon chip frame 2 that holds silicon chip to be cleaned 1 inside, main chamber, the heat exchange coil 5 that the outer disk coiling is colod-application, and the resistance wire of heating usefulness is arranged at the bottom.The temperature in main chamber is measured by temperature sensor 106, and whether needs heating or refrigeration by the temperature control system decision, to guarantee suitable working temperature; The pressure in main chamber is measured by pressure sensor 107.Because this equipment is worked under condition of high voltage, must guarantee good resistance to pressure and the seal of package unit, so having high pressure sealing lid 101, main chamber 1 guarantees good airtight performance.
Main working chamber 1 remains liquid environment in cleaning process, gas when preventing to clean---and the surface tension at liquid interface causes small device architecture and figure and damages and to the fatal absorption of impurity particle.
The feed tube of disengagement chamber 3 links to each other with the discharging tube of main working chamber 104, and the compressor in discharge duct 9 and the carbon dioxide cyclic control system 8 links to each other, and the waste liquid passing away has manual normally closed switch.After cleaning fluid drains into disengagement chamber, make the liquid CO 2 gasification by step-down, gas phase carbon dioxide is delivered to compressor via blast pipe 9 and is compressed heat radiation, gets back to air accumulator, and the waste liquids such as impurity that organic solvent and cleaning produce are then discharged this equipment by above-mentioned hand switch.
Carbon dioxide cyclic control system 8 comprises carbon dioxide storage tank and compressor two parts, and it is that this cleaning equipment is realized the key structure that carbon dioxide recycles.On the one hand, after the discharge duct 9 of the carbon dioxide that participates in cleaning process by disengagement chamber enters compressor and compress heat radiation, return air accumulator; Importing the carbon dioxide that participates in refrigeration in the heat exchange coil 5 on the other hand also recycles by returning air accumulator after the compressor compresses.Do a large amount of consumption of having avoided carbon dioxide in the existing open system like this, thereby solved the pressure of greenhouse gas emission for environment.
When equipment involved in the present invention is applied to the semiconductor wafer cleaning, wafer to be cleaned in the main working chamber 1 in the silicon chip frame 2 needs to remain liquid environment in cleaning process, prevent gas---adverse consequencess such as particle absorption that the surface tension at liquid interface causes, structure cohesion.Wafer is cleaned as cleaning fluid with the above-critical state carbon dioxide that contains a small amount of cleaning agent and cosolvent earlier, carry out degree of depth rinsing with the above-critical state carbon dioxide again, implement supercritical drying at last.Whole process need is controlled the temperature and pressure of main working chamber 1.The waste liquid that produces in the cleaning process is delivered in the disengagement chamber 3 and is handled, and after disengagement chamber 3 step-downs, gas phase carbon dioxide is separated with waste liquid, after disengagement chamber discharge duct 9 is by the compressor compresses heat radiation, gets back to air accumulator, and residual waste solution is then discharged via manual bleed valve.
Concrete job step when using equipment provided by the invention to clean is as follows:
(1) opens the high pressure sealing lid 101 of main working chamber 1, take out silicon chip frame 2, wafer to be cleaned is placed on the silicon chip frame under the condition that keeps wet environment, send working chamber 1 back to, close high pressure sealing lid 101.
(2) open main chamber liquid inlet electromagnetic valve 102 and cleaning agent and cosolvent temporary storage cavity draining valve 403, make the mixture of liquid CO 2 and cleaning agent, cosolvent be full of main working chamber, keep the working temperature in main chamber 1 and pressure critical temperature and critical pressure, wafer is tentatively implemented superfluid clean greater than carbon dioxide.
(3) after preliminary cleaning finishes, open main chamber draining solenoid valve 105,, cleaning fluid is fully replaced by main chamber feed tube input liquid CO 2.Cleaning fluid enters disengagement chamber by main chamber discharging tube 104.After displacement is finished, be full of liquid CO 2 in the main chamber.
(4) close main chamber draining solenoid valve 105.Control main cavity temperature and pressure in the critical temperature of carbon dioxide with more than the critical pressure, promptly use the above-critical state carbon dioxide that the wafer after cleaning is carried out degree of depth rinsing.Meanwhile, disengagement chamber 3 step-downs change gas phase into as the carbon dioxide of liquid medium, separate with impure organic liquid waste, discharge disengagement chambers by disengagement chamber blast pipe 9, return air accumulator via compressor compresses heat radiation back and recycle; Waste liquid then passes through the manual bleed valve device for transferring of disengagement chamber.
(5) in the main working chamber 1 be after the degree of depth rinse cycle of rinsing liquid finishes in the step 4 with the superfluid, open main chamber draining solenoid valve, keep cavity temperature more than critical temperature, slowly reduce chamber pressure, wafer is implemented supercritical drying, the carbon dioxide direct gasification in the chamber.Atmospheric carbon dioxide returns air accumulator by compressor compresses heat radiation back equally and recycles.
(6) so far, cleaning process finishes.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1, a kind of semiconductor cleaning equipment using green carbon monoxide super fluid, it is characterized in that, this equipment comprises main working chamber (1), disengagement chamber (3), cleaning agent and cosolvent temporary storage cavity (4), temperature control system (7) and carbon dioxide cyclic control system (8), wherein
Described main working chamber (1), the superfluid that is used for semiconductor wafer cleans and drying, be fixed on the bearing (6), this main working chamber bottom is equipped with the temperature sensor (106) and the pressure sensor (107) of temperature control system (7), and the temperature of chamber interior is subjected to the control of temperature control system (7);
Disengagement chamber (3), be used for carbon dioxide and clean separating of waste liquid, be fixed on the bearing (6), the pipeline (104) by charged magnet valve (105) links to each other with main working chamber (1), links to each other with carbon dioxide cyclic control system (8) by disengagement chamber discharge duct (9);
Cleaning agent and cosolvent temporary storage cavity (4) are used to deposit the auxiliary organic solvent that cleans, and the pipeline (402) by charged magnet valve (403) links to each other with the carbon dioxide inlet duct (103) of main working chamber (1);
Temperature control system (7) is used for the temperature of main working chamber (1) chamber interior is controlled;
Carbon dioxide cyclic control system (8), be used to realize the carbon dioxide loop control work of complete equipment, be fixed on the bearing (6), constitute by liquid CO 2 air accumulator and compressor, carbon dioxide is compressed, dispels the heat and stores, finish the refrigeration task of main working chamber (1) simultaneously.
2, semiconductor cleaning equipment using green carbon monoxide super fluid according to claim 1 is characterized in that, there is the silicon chip frame (2) that holds wafer the inside of described main working chamber (1), outside by the heat exchange coil that is used to freeze (5) around, heater strip is arranged at the bottom.
3, semiconductor cleaning equipment using green carbon monoxide super fluid according to claim 1 is characterized in that, described main working chamber (1) top is provided with high pressure sealing lid (101), guarantees that main working chamber (1) has good airtight performance.
4, semiconductor cleaning equipment using green carbon monoxide super fluid according to claim 1 is characterized in that, the liquid CO 2 in the described carbon dioxide cyclic control system (8) flows in cleaning loop and refrigeration work loop respectively;
Described cleaning loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system (8), gets back to the air accumulator of carbon dioxide cyclic control system (8) via the compressor of main working chamber feed tube (103), main working chamber (1), main working chamber discharging tube (104), disengagement chamber (3), disengagement chamber blast pipe (9), carbon dioxide cyclic control system (8);
Described refrigeration work loop begins from the carbon dioxide air accumulator of carbon dioxide cyclic control system (8), gets back to the air accumulator of carbon dioxide cyclic control system (8) behind the compressor via heat exchanger coils (5) and carbon dioxide cyclic control system (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101787743A CN101452820A (en) | 2007-12-05 | 2007-12-05 | Semiconductor cleaning equipment using green carbon monoxide super fluid |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101787743A CN101452820A (en) | 2007-12-05 | 2007-12-05 | Semiconductor cleaning equipment using green carbon monoxide super fluid |
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| CN101452820A true CN101452820A (en) | 2009-06-10 |
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| CNA2007101787743A Pending CN101452820A (en) | 2007-12-05 | 2007-12-05 | Semiconductor cleaning equipment using green carbon monoxide super fluid |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051299A (en) * | 2013-03-12 | 2014-09-17 | 三星电子株式会社 | Apparatus for treating substrate using supercritical fluid, substrate treatment system comprising the same, and method for treating substrate |
| CN112974412A (en) * | 2021-02-23 | 2021-06-18 | 中国核动力研究设计院 | Chemical decontamination method and device for radioactive pollution by supercritical carbon dioxide |
-
2007
- 2007-12-05 CN CNA2007101787743A patent/CN101452820A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051299A (en) * | 2013-03-12 | 2014-09-17 | 三星电子株式会社 | Apparatus for treating substrate using supercritical fluid, substrate treatment system comprising the same, and method for treating substrate |
| CN104051299B (en) * | 2013-03-12 | 2019-01-25 | 三星电子株式会社 | Substrate board treatment, base plate processing system and the method for handling substrate |
| CN112974412A (en) * | 2021-02-23 | 2021-06-18 | 中国核动力研究设计院 | Chemical decontamination method and device for radioactive pollution by supercritical carbon dioxide |
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Application publication date: 20090610 |