CN101728465A - Preparation method of light-emitting diode - Google Patents
Preparation method of light-emitting diode Download PDFInfo
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- CN101728465A CN101728465A CN200810172332A CN200810172332A CN101728465A CN 101728465 A CN101728465 A CN 101728465A CN 200810172332 A CN200810172332 A CN 200810172332A CN 200810172332 A CN200810172332 A CN 200810172332A CN 101728465 A CN101728465 A CN 101728465A
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Abstract
A preparation method of a light-emitting diode (LED) comprises the following steps: firstly providing a substrate, then providing a light-emitting chip on the substrate, wherein the upper surface of the light-emitting chip is provided with at least one electrode; forming a fluorescent layer on the upper surface of the light-emitting chip, wherein the fluorescent layer covers the electrode; then providing a focused laser beam by a laser generator so as to burn off partial fluorescent layer covered on the electrode and form a through hole for exposing partial electrode, and finally electrically connecting the electrode of the light-emitting chip with the substrate through the through hole.
Description
Technical field
The invention provides a kind of manufacture method of luminescence component, refer in particular to a kind of manufacture method of light-emitting diode.
Background technology
(Light emitting diode LED) has that reaction speed is fast, the life-span is long to light-emitting diode, and advantage such as volume is little, can be widely used in various indicating devices and uses as light source.Along with the successful research and development of white light emitting diode and the lifting of luminous efficiency thereof, light-emitting diode also comes into one's own gradually in the application in general lighting (general lighting) field.
Existing white light emitting diode is can absorb blue light with one and the fluorescence coating that sends gold-tinted is formed at one can send on the luminescence chip surface of blue light with electrophoretic deposition or ink-jet method, so that blue light and gold-tinted mixed light and form white light.Except the luminescence chip that covers crystalline substance (flip chip) pattern, general luminescence chip needs to pass this fluorescence coating by routing joint (wire bonding) formed plain conductor and is electrically connected with this pedestal.
Because electrophoretic deposition or the formed fluorescence coating of ink-jet method are difficult for forming open-work with traditional lithography technology, pass for this plain conductor, therefore, existing white light LED production method, after being electrically connected this luminescence chip and this pedestal with plain conductor earlier mostly, on this luminescence chip, form this fluorescence coating again.Yet this kind manufacture method makes easily that but the thickness of plain conductor fluorescence coating on every side is obviously bigger, and then causes even light mixing not good.
Summary of the invention
Therefore, a purpose of the present invention is to provide a kind of LED production method that the fluorescence coating of consistency of thickness is provided, and can make the light-emitting diode that makes have preferable even light mixing.
For achieving the above object, the invention provides a kind of manufacture method of light-emitting diode, comprise following steps: at first provide a pedestal, next provides a luminescence chip on this pedestal, the upper surface of this luminescence chip has at least one electrode, then on the upper surface of this luminescence chip, form a fluorescence coating, this fluorescence coating covers this electrode, provide a focussed laser beam will be covered in part fluorescence coating burn off on this electrode with a laser generator then, expose the open-work of this electrode of part at least with formation, the electrode with this luminescence chip is electrically connected on this pedestal via this open-work with a lead at last.
Beneficial functional of the present invention is, by the part fluorescence coating burn off that will be covered in focussed laser beam on this electrode, the open-work that exposes this electrode with formation, can be electrically connected this electrode and this pedestal for this lead, so that the fluorescence coating of consistency of thickness to be provided, can around this lead, not have bigger thickness, make the light-emitting diode that makes with this method can have preferable even light mixing.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the flow chart of the manufacture method of light-emitting diode of the present invention; And
Fig. 2 to Fig. 7 is the cutaway view in each stage of making of light-emitting diode of the present invention.
Wherein, Reference numeral
10 pedestals, 11 weld pads
20 luminescence chips, 21 electrodes
30 fluorescence coatings, 31 open-works
40 laser generators, 41 focussed laser beams
50 leads, 100～500 steps
Embodiment
Relevant technology contents of the present invention, can clearly illustrate with reference in the graphic preferred embodiment in following cooperation:
Fig. 1 is that the manufacture method of this light-emitting diode mainly comprises the following step according to the flow chart of a preferred embodiment of the manufacture method of light-emitting diode of the present invention:
At first, in step 100, cooperate as shown in Figure 2, a pedestal 10 is provided, this pedestal 10 has a smooth upper surface.This pedestal 10 can be bulb pattern (lamp type) or surface mount pattern (surfacemounted type), and does not limit with this, and visual actual demand is changed.The upper surface of this pedestal 10 has two weld pads 11 that are provided with at interval.
Secondly, in step 200, cooperate as shown in Figure 3, a luminescence chip 20 is provided, and this luminescence chip 20 is arranged at the upper surface of this pedestal 10.The upper surface of this luminescence chip 20 has the electrode 21 that two metal materials are made.In the present embodiment, this luminescence chip 20 is one can send the light-emitting diode chip for backlight unit of blue light, and actual enforcement then do not limit with this.
Then, in step 300, cooperate as shown in Figure 4, form a fluorescence coating 30 on this luminescence chip 20, this fluorescence coating 30 covers upper surface, the side of this luminescence chip 20, and these electrodes 21.This fluorescence coating 30 comprises phosphor material powder, in order to absorbing the light that this luminescence chip 20 is partly sent, and is converted into another photochromic light.In the present embodiment, this fluorescence coating 30 makes fluorescent material be attached to this luminescence chip 20 by electrophoretic deposition or ink-jet method and forms, and this fluorescent material to be a part blue light that this luminescence chip 20 is sent be converted to gold-tinted so that the gold-tinted mixed light that another blue light that is not partly absorbed by fluorescent material and fluorescent material are changed out forms white light.
Then, in step 400, cooperate as shown in Figure 5, provide part fluorescence coating 30 burn offs on the electrode 21 that a focussed laser beam 41 will be covered in this luminescence chip 20, to form two open-works 31 that expose this electrode 21 at least partly respectively with a laser generator 40.The wavelength of this focussed laser beam 41 is positioned at the ultraviolet light wave band, to utilize its high-energy photons that has material of this fluorescence coating 30 of burn off effectively.This laser generator 40 can be a quasi-molecule (excimer) laser generator, or a neodymium-doped yttrium-aluminum garnet (Nd:YAG) laser generator.
In addition; in step 400; for fear of the 40 output energy controls of this laser generator when not good; and the electrode 21 that causes this luminescence chip 20 suffers that focussed laser beam 41 destroys; also can be pre-formed a metal buffer layer, in order to the damage of protecting this electrode 21 not produced by this focussed laser beam 41 at the upper surface of this electrode 21.This metal buffer layer can be gold, aluminium, Sillim's alloy, chromium, or material such as silver is made, so that preferable protection effect to be provided.
At last, in step 500, cooperate as shown in Figure 6, the electrode 21 of this luminescence chip 20 is electrically connected on the weld pad 11 of this pedestal 10 via these open-works 31 respectively with two leads 50.Specifically, these leads 50 are to utilize routing to engage on the weld pad 11 that (wire bonding) mode is engaged in the electrode 21 of this luminescence chip 20 and this pedestal 10 respectively.
In addition, in the present embodiment, this luminescence chip 20 is that the light-emitting diode that all is positioned at upper surface with its two electrode 21 is an example, during actual enforcement, also can be as shown in Figure 7, adopt its two electrode to lay respectively at the luminescence chip 20 of upper surface and lower surface, and its manufacture method and above-mentioned steps are roughly the same, they are different be in, the electrode 21 of the lower surface of this luminescence chip 20 directly contacts with this pedestal 10 to form and is electrically connected, therefore, only need the fluorescence coating 30 on the electrode 21 of the upper surface that is covered in this luminescence chip 20 with the focussed laser beam burn off, expose the open-work 31 of the electrode 21 of the upper surface of this luminescence chip 20 of part at least to form one, the usefulness of the electrode 21 of these lead 50 these luminescence chips 20 of electrical connection of confession and the weld pad 11 of this pedestal 10.
In sum, the present invention is by part fluorescence coating 30 burn offs on the electrode 21 that will be covered in this luminescence chip 20 with focussed laser beam 41, the open-work 31 that exposes this electrode 21 with formation, can be electrically connected for the electrode 21 of 50 pairs of these luminescence chips 20 of this lead and the weld pad 11 of this pedestal 10, so that the fluorescence coating of consistency of thickness to be provided, can around this lead, not have bigger thickness, make the light-emitting diode that makes with this method can have preferable even light mixing, reach effect of the present invention really.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (11)
1. the manufacture method of a light-emitting diode is characterized in that, comprises following steps:
(A) provide a pedestal;
(B) provide a luminescence chip on this pedestal, the upper surface of this luminescence chip has at least one electrode;
(C) form a fluorescence coating on the upper surface of this luminescence chip, this fluorescence coating covers this electrode;
(D) provide a focussed laser beam will be covered in part fluorescence coating burn off on this electrode with a laser generator, to form an open-work that exposes this electrode at least partly; And
(E) electrode with this luminescence chip is electrically connected on this pedestal via this open-work with a lead.
2. the manufacture method of light-emitting diode according to claim 1 is characterized in that, the wavelength of this focussed laser beam is positioned at the ultraviolet light wave band.
3. the manufacture method of light-emitting diode according to claim 2 is characterized in that, this laser generator is an excimer laser generator.
4. the manufacture method of light-emitting diode according to claim 2 is characterized in that, this laser generator is a nd yag doubled-frequency laser generator.
5. the manufacture method of light-emitting diode according to claim 1 is characterized in that, this luminescence chip is a blue LED chip, and this fluorescence coating is the fluorescence coating that general's part blue light is converted to gold-tinted.
6. the manufacture method of light-emitting diode according to claim 1 is characterized in that, this fluorescence coating is made with electrophoretic deposition or ink-jet method.
7. the manufacture method of light-emitting diode according to claim 1 is characterized in that, this electrode is that metal material is made.
8. the manufacture method of light-emitting diode according to claim 1 is characterized in that, also is included in to be formed with one on this electrode in order to protect the injury-free metal buffer layer of this electrode.
9. the manufacture method of light-emitting diode according to claim 1 is characterized in that, this metal buffer layer is that gold, aluminium, Sillim's alloy, chromium or silver-colored material are made.
10. the manufacture method of light-emitting diode according to claim 1 is characterized in that, this pedestal has this lead electrical connection of at least one confession weld pad thereon.
11. the manufacture method of light-emitting diode according to claim 10 is characterized in that, this lead is to utilize the routing juncture to be engaged in the electrode of this luminescence chip and the weld pad of this pedestal respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810172332A CN101728465A (en) | 2008-10-31 | 2008-10-31 | Preparation method of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810172332A CN101728465A (en) | 2008-10-31 | 2008-10-31 | Preparation method of light-emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101728465A true CN101728465A (en) | 2010-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200810172332A Pending CN101728465A (en) | 2008-10-31 | 2008-10-31 | Preparation method of light-emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544329A (en) * | 2012-03-14 | 2012-07-04 | 连云港陆亿建材有限公司 | Wafer level light emitting diode encapsulation structure and manufacturing process thereof |
-
2008
- 2008-10-31 CN CN200810172332A patent/CN101728465A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544329A (en) * | 2012-03-14 | 2012-07-04 | 连云港陆亿建材有限公司 | Wafer level light emitting diode encapsulation structure and manufacturing process thereof |
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Open date: 20100609 |