CN101728248A - Growing method of gallium nitride - Google Patents
Growing method of gallium nitride Download PDFInfo
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- CN101728248A CN101728248A CN200810224104A CN200810224104A CN101728248A CN 101728248 A CN101728248 A CN 101728248A CN 200810224104 A CN200810224104 A CN 200810224104A CN 200810224104 A CN200810224104 A CN 200810224104A CN 101728248 A CN101728248 A CN 101728248A
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Abstract
The invention relates to a growing method of gallium nitride. The growing method is characterized by comprising the following steps of: (1) getting a substrate; (2) growing a buffer layer by adopting methods of magnetron sputtering, pulsed laser deposition or metal organic chemical vapor deposition (MOCVD); and (3) growing an epitaxial layer on the buffer layer by adopting methods of MOCVD, high voltage paper electrophoresis (HVPE) or pulsed laser deposition and magnetron sputtering. The growing method of gallium nitride can realize the high-quality growth and the polarity selection of a gallium nitride material and the use of a low cost substrate.
Description
Technical field
The invention belongs to technical field of semiconductors, refer in particular to and in gallium nitride material growth, combine the zinc oxide material growth and a kind of growing method of design, can be used to realize the growth of the nonpolar gallium nitride of high-quality etc. and the epitaxy of gallium nitride on the low-cost substrate.
Background technology
III family gallium nitride polynary system material belongs to the semi-conducting material of direct band gap, band gap can be adjusted to 6.2eV continuously from 0.7eV, color covers from infrared to ultraviolet wavelength, at photoelectron such as blue light, green glow, ultraviolet light-emitting diodes (LED), short wavelength laser diode (LD), aspects such as ultraviolet detector, Bragg reflection waveguide have important use and development.Gallium nitride (GaN) material is as one of third generation semi-conducting material representative in addition, excellent properties such as physical and chemical stability with direct band gap, broad stopband, high saturated electron drift velocity, high breakdown electric field and high heat conductance, excellence, aspect microelectronic applications, also obtained paying close attention to widely, can make high temperature, high frequency and high power device, as High Electron Mobility Transistor (HEMT), heterojunction bipolar transistor (HBT) etc.Because gallium nitride material is in the luminous influence that is not subjected to fault in material substantially of some wave band, gallium nitrate based in the last few years led lighting fast development, LED is widely used in display, illumination, indicator light, billboard, traffic lights etc., the light compositing light source is quickened in conduct in agricultural, the instrument of conduct diagnosis and treatment in medical treatment.Table one is the comparison of GaN and this character of zno-based.
Table one
Zinc oxide (ZnO) belongs to wide bandgap semiconductor equally, and its band gap is near gallium nitride, and lattice constant and thermal coefficient of expansion are also very near gallium nitride (seeing Table one) simultaneously.Zinc oxide has active chemical property and excellent growth orientation than gallium nitride, also is easy to form simultaneously controlled nanostructure.Because lattice is approaching, gallium nitride and ZnO usually are used to improve crystal mass as resilient coating mutually; Because the crystal orientation of ZnO is relatively easily controlled, can realize the gallium nitride growth in various crystal orientation by the ZnO of growth different crystal orientations, comprise polarity, semi-polar and nonpolar gallium nitride growth.The active chemical property of ZnO provides more convenience for technology simultaneously, can be used as the up-stripping layer of gallium nitride growth.
The present invention's gallium nitride material growth in the past many with low temperature gallium nitride or aluminium nitride etc. as resilient coating, obtain the gallium nitride material of better quality by two-step method.This mode all obtains reasonable gallium nitride material on sapphire, SiC even Si, but nearest trial shows if simple use two-step method is difficult to obtain high quality devices level gallium nitride material in the growth of non-c surface gallium nitride.The growing gallium nitride material also is difficult to use two-step method to realize on cheap more polycrystalline or amorphous substrate in addition.Than gallium nitride, zinc oxide is easy to preferred orientation more, be more prone to form the nanometer monocrystalline figure, this just makes zinc oxide be very suitable on polycrystalline or non-crystalline material forming the oriented growth of preferred orientation, thereby provides necessary condition for follow-up crystal growth.The introducing of ZnO can also make us control the growth orientation of gallium nitride in addition, can grow polarity, semi-polarity or nonpolar gallium nitride material.
The present invention is intended to introduce the ZnO resilient coating in the gallium nitride growth, improves the crystal mass of gallium nitride; Or formation is suitable for the growing method of gallium nitride of opposed polarity; Or the high-quality gallium nitride growth of formation on cheap more substrate such as Si, polycrystalline, amorphous.Thereby provide new selection for developing high-performance optical electronics and microelectronic material.
Summary of the invention
The objective of the invention is to, a kind of growing method of gallium nitride is provided, when the growing gallium nitride material, developing zinc oxide resilient coating at first, in conjunction with the advantage of the identical lattice structure of zinc oxide, close lattice constant and thermal coefficient of expansion and easy preferred orientation growth of zinc oxide and formation nanostructure, thereby realize the high-quality growth of gallium nitride material and the use of polarity selection and low-cost substrate with gallium nitride.
The invention provides a kind of growing method of gallium nitride, it is characterized in that, comprise the steps:
Step 1: get a substrate;
Step 2: on substrate, adopt the method for magnetron sputtering, pulsed laser deposition or MOCVD, grown buffer layer;
Step 3: on resilient coating, adopt the method for MOCVD, HVPE or pulsed laser deposition, magnetron sputtering, grown epitaxial layer.
Wherein the material of substrate is SiC, sapphire, Si or quartz glass.
Wherein the material of resilient coating is a zinc oxide.
Wherein the material of epitaxial loayer is a gallium nitride.
Wherein the thickness of resilient coating is 20-5000nm.
Growing method of gallium nitride of the present invention is at first grow on substrate before the growing gallium nitride material one deck zinc oxide material, growing gallium nitride material on zinc oxide then.The characteristics that this layer zinc oxide material of growing can utilize zinc oxide to be easy to be orientated realize the growth of different orientations; Growing patterned and the constituency extension of the convenient realization of the characteristics of utilizing zinc oxide to be easy to corrode; Utilize the good lattice match and the heat coupling of zinc oxide and gallium nitride to realize high-quality gallium nitride material growth.
The technology used in the present invention measure, can realize the low cost and the high controllable growth of high-quality gallium nitride material, for the wide market application that realizes the gallium nitride material system lays the foundation, most important applications comprises the high-quality growth of nonpolar gallium nitride, the gallium nitride single crystal growth on low-cost polycrystalline or the amorphous substrate etc.
Description of drawings
For further specifying content of the present invention, below in conjunction with specific embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is the gallium nitride growth schematic diagram of invention;
Fig. 2 is XRD test result figure: use zinc oxide zno buffer layer be grown to (10-10) m surface gallium nitride and do not use zinc bloom buffer layer be grown to (10-1-3) surface gallium nitride;
Fig. 3 is the XRD swing curve figure of m surface gallium nitride.
Embodiment
See also Fig. 1, a kind of growing method of gallium nitride of the present invention comprises the steps:
Step 1: get a substrate 10, the material of this substrate 10 can be SiC, sapphire, Si or quartz glass, and this backing material orientation (if there is) will influence the orientation of follow-up epitaxial material, also will influence the performance of subsequent material simultaneously;
Step 2: the method that on substrate 10, adopts magnetron sputtering, pulsed laser deposition or MOCVD, grown buffer layer 20, the material of this resilient coating 20 is a zinc oxide, can obtain the zinc oxide material of different performance by the control of different temperatures, pressure, atmosphere etc., help the Properties Control of back extension gallium nitride;
Step 3: adopt the method for MOCVD, HVPE or magnetron sputtering, pulsed laser deposition on resilient coating 20, grown epitaxial layer 30, the material of this epitaxial loayer 30 are gallium nitride, the growing film materials such as thick film or MOCVD of can growing fast by HVPE.
Embodiment
Please shown in Figure 1 in conjunction with consulting, at first use the method for magnetron sputtering on the Sapphire Substrate 10 of m face, developing zinc oxide resilient coating 20, the thickness of this resilient coating are 200nm, in order to contrast, we also select not the contrast that experimentizes of the m surface sapphire of developing zinc oxide resilient coating 20 simultaneously;
Growing zinc bloom buffer layer 20 and do not have to use on the sapphire of developing zinc oxide resilient coating 20 epitaxial layer of gallium nitride 30 of 50 microns of HVPE method growths then, and for fear of the reaction of zinc oxide under reducing atmosphere, nitrogen is used in carrier gas;
By XRD the gallium nitride of growth is characterized subsequently, find not have the epitaxial layer of gallium nitride 30 of developing zinc oxide resilient coating 20 to be (10-1-3) planar orientation; And the epitaxial layer of gallium nitride 30 of the zinc bloom buffer layer 20 of having grown is oriented to m (10-10) planar orientation, (as shown in Figure 2).The orientation of this explanation epitaxial layer of gallium nitride 30 is subjected to the control of zinc bloom buffer layer 20, rather than directly forms by substrate 10.Simultaneously the XRD swing curve shows that also the crystal mass of gallium nitride is better behind the developing zinc oxide, sees Fig. 3.
Claims (5)
1. a growing method of gallium nitride is characterized in that, comprises the steps:
Step 1: get a substrate;
Step 2: on substrate, adopt the method for magnetron sputtering, pulsed laser deposition or MOCVD, grown buffer layer;
Step 3: on resilient coating, adopt the method for MOCVD, HVPE or pulsed laser deposition, magnetron sputtering, grown epitaxial layer.
2. growing method of gallium nitride according to claim 1 is characterized in that, wherein the material of substrate is SiC, sapphire, Si or quartz glass.
3. growing method of gallium nitride according to claim 1 is characterized in that, wherein the material of resilient coating is a zinc oxide.
4. growing method of gallium nitride according to claim 1 is characterized in that, wherein the material of epitaxial loayer is a gallium nitride.
5. growing method of gallium nitride according to claim 1 is characterized in that, wherein the thickness of resilient coating is 20-5000nm.
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| CN200810224104A CN101728248A (en) | 2008-10-15 | 2008-10-15 | Growing method of gallium nitride |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102719887A (en) * | 2012-06-13 | 2012-10-10 | 中国电子科技集团公司第五十五研究所 | Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate |
| CN102828250A (en) * | 2012-08-31 | 2012-12-19 | 南京大学 | Growing method for GaN nanowire |
| CN102903614A (en) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | Method for preparing non-polar A face GaN thin film |
| CN102931315A (en) * | 2011-08-09 | 2013-02-13 | 叶哲良 | Semiconductor structure and manufacture method thereof |
| CN103258926A (en) * | 2013-04-28 | 2013-08-21 | 西安交通大学 | LED vertical chip structure and manufacturing method |
| CN106086795B (en) * | 2016-05-31 | 2019-02-01 | 南京信息工程大学 | A kind of zinc oxide/gallium nitride preparation method of composite film |
-
2008
- 2008-10-15 CN CN200810224104A patent/CN101728248A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931315A (en) * | 2011-08-09 | 2013-02-13 | 叶哲良 | Semiconductor structure and manufacture method thereof |
| CN102719887A (en) * | 2012-06-13 | 2012-10-10 | 中国电子科技集团公司第五十五研究所 | Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate |
| CN102719887B (en) * | 2012-06-13 | 2014-12-10 | 中国电子科技集团公司第五十五研究所 | Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate |
| CN102903614A (en) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | Method for preparing non-polar A face GaN thin film |
| CN102828250A (en) * | 2012-08-31 | 2012-12-19 | 南京大学 | Growing method for GaN nanowire |
| CN103258926A (en) * | 2013-04-28 | 2013-08-21 | 西安交通大学 | LED vertical chip structure and manufacturing method |
| CN106086795B (en) * | 2016-05-31 | 2019-02-01 | 南京信息工程大学 | A kind of zinc oxide/gallium nitride preparation method of composite film |
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Open date: 20100609 |