CN102828250A - Growing method for GaN nanowire - Google Patents
Growing method for GaN nanowire Download PDFInfo
- Publication number
- CN102828250A CN102828250A CN2012103172284A CN201210317228A CN102828250A CN 102828250 A CN102828250 A CN 102828250A CN 2012103172284 A CN2012103172284 A CN 2012103172284A CN 201210317228 A CN201210317228 A CN 201210317228A CN 102828250 A CN102828250 A CN 102828250A
- Authority
- CN
- China
- Prior art keywords
- purity
- carrier gas
- hcl
- film
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000012159 carrier gas Substances 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 4
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 14
- 238000000407 epitaxy Methods 0.000 claims description 9
- 230000004907 flux Effects 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000002086 nanomaterial Substances 0.000 description 6
- 150000004678 hydrides Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a method for preparing a GaN nanowire. The method comprises the following steps: evaporating a metal Ni film on a sapphire substrate after being cleaned; causing the thickness of the Ni film to be 5-50nm; placing the sapphire substrate coated with the Ni film into a HVPE (High Voltage Paper Electrophoresis) growing system and starting to grow the GaN nanowire, wherein the growing temperature is at 500-850 DEG C; taking high-purity N2 as a carrier gas, wherein the total N2 carrier gas flow is 1-5sccm; taking conventional high-purity metal gallium as a Ga source and reacting with high-purity HCl, thereby generating GaCl, wherein the HCl flow is 1-20sccm and the HCl carrier gas flow is 10-200sccm; taking high-purity ammonia as a nitrogen source, wherein NH3 flow is 50-500sccm; and growing for 1-10 minutes, thereby growing the GaN nanowire.
Description
Technical field
The present invention relates to a kind of method with the hydride gaseous epitaxially groven GaN nano wire.
Background technology
With GaN and InGaN, AlGaN alloy material is that master's III-V group nitride material (claiming the GaN sill again) is the novel semiconductor material of extremely paying attention in the world in recent years.The GaN sill is the direct band gap semiconductor material with wide forbidden band, has the direct band gap of continuous variable between 1.9-6.2eV, excellent physics, chemicalstability; High saturated electron drift velocity; High-performances such as high breaking down field strength and high heat conductance have important use at aspects such as short wavelength's semiconductor photoelectronic device and high frequency, high pressure, the preparations of high temperature microelectronic device, are used for making such as indigo plant, purple, ultraviolet band luminescent device, sensitive detection parts; High temperature, high frequency, High-Field high power device; Feds, radioprotective device, piezoelectric device etc.
The nano material of one dimension system is the effective smallest dimension structure of transmission electronic and optics exciton, also is the basic structural unit of nano-machine device and nano electron device.The GaN material makes the One-Dimensional GaN nanostructure have potential application foreground widely in fields such as micro-nano photoelectric device, photoelectric detector, electron device, environment and medical science as the good characteristic of important semiconductor material; Therefore, processability excellence, high-quality One-Dimensional GaN nanostructure and characteristic research just become the advanced subject of the current world, domestic research.
The growth of GaN sill has a variety of methods, like gas phase epitaxy of metal organic compound (MOCVD), HTHP compound body GaN monocrystalline, molecular beam epitaxy (MBE), subliming method and hydride gas-phase epitaxy (HVPE) etc.The preparation of GaN nanostructure mainly contains anisotropy controllable growth method, VLS (Vapor – Liquid – Solid) and the machine-processed growth method of SLS (Solution – Liquid – Solid), template assisting growth method, surfactant method, nanoparticle self-assembly and physics or chemical process shearing etc.The growth of GaN nanostructure can be adopted multiple mode such as acquisitions such as MOCVD, MBE, but this type of equipment price cost is high, the source material expensive.
The present invention has provided a kind of employing metallic nickel (Ni) and has made catalyzer, with the method and the technology of hydride gas-phase epitaxy (HVPE) equipment growing GaN nano wire.
Summary of the invention
The present invention seeks to: propose a kind of with metallic nickel as catalyzer, growing GaN nano wire in hydride gas phase epitaxial growth equipment.Can prepare excellent performance, high-quality One-Dimensional GaN nanostructure product.
Technical scheme of the present invention is, prepares the method for GaN nano wire, utilizes hydride gas-phase epitaxy (HVPE) equipment growing GaN nano wire.Make catalyzer with metallic nickel, after the cleaning of Sapphire Substrate, first evaporation metal Ni film; The setting of Ni film deposition rate is about 1-2 dust/second, Ni film thickness 5-50nm; The Sapphire Substrate that is covered with metal nickel film is put into the HVPE growing system, beginning low-temperature epitaxy GaN nano wire; Growth temperature: 850 ℃ of 500 –; High-purity N
2As carrier gas, total N
2Carrier gas flux 1-5slm; The Ga source adopts conventional high purity metal gallium and high-purity HCl reaction to generate GaCl, HCl flow: 1-20sccm, HCl carrier gas flux 10-200sccm.High-purity ammonia is as nitrogenous source, NH
3Flow: 50 – 500sccm; Growth time 1-10 minute.
Growth temperature is especially: 650 ℃ of 500-.
Metallic nickel is during as catalyzer, and the HVPE of GaN nano wire is a VLS mechanism.Because HVPE growth velocity fast (hundreds of micron/hour) is usually used in growing fast thick film.In the present invention, need the control growing condition, make HVPE GaN growth velocity reduce, to obtain the GaN nano wire.Technical scheme of the present invention is: the method evaporation metal Ni on Sapphire Substrate with physical vapor deposition, put into the HVPE growing system, low-temperature epitaxy GaN nano wire then.
Beneficial effect of the present invention is: the present invention has provided a kind of technology GaN nanowire growth method and technology simple, with low cost.Diameter reaches tens nanometer, and length can reach several microns.
Description of drawings
Fig. 1 is the product photo of the embodiment of the invention.Under the situation of other parameter constant, NH
3Fluctuations in discharge prepare the GaN nano wire pattern (Fig. 1 in the left, center, right three photos respectively corresponding NH
3The difference of flow: promptly be respectively 50,100 and 200sccm.Growth temperature: 550,600 and 650 ℃ are removed nano wire and directly are outside one's consideration, and outward appearance does not have remarkable difference.
Fig. 2 is the product photo of the embodiment of the invention.The electron scanning micrograph of HVPE growing GaN nano wire, wherein inserting figure is high multiple photo.
Embodiment
The inventive method and technology comprise several sections: the physical vapor deposition of metal Ni film on Sapphire Substrate; The HVPE low-temperature epitaxy of GaN nano wire.
One of technology implementation mode of the present invention, HVPE technology preparation GaN nano wire comprises following a few step:
1, the cleaning of Sapphire Substrate and processing.Sample is carried out ultrasonic cleaning successively in deionized water, ethanol and deionized water, remove the pollutent of remained on surface, dry up with nitrogen.
2, Sapphire Substrate is put into the physical vapor deposition device reaction chamber, under certain reaction cavity pressure and source metal temperature, can begin the vapor deposition of metal Ni film.The setting of Ni film deposition rate is about 1-2 dust/second, Ni nano film thickness 5-50nm.Present embodiment is selected 20-30nm.
The Sapphire Substrate that 3, will be covered with metal nickel film is put into the HVPE growing system, beginning low-temperature epitaxy GaN nano wire.Growth temperature: 550,600 and 650 ℃ of three temperature condition; High-purity N
2As carrier gas, total N
2Carrier gas flux 1-5slm; High purity metal gallium and high-purity HCl reaction generate GaCl as the gallium source, HCl flow: 1-20sccm, HCl carrier gas flux 10-200sccm.High-purity ammonia is as nitrogenous source, NH
3Flow (corresponding three kinds of flows): 50,100 and 200sccm; Growth time 5 minutes.
4, take out sample according to cooling after the step 3 growth completion, promptly obtain the GaN nano wire.
5, the parameter among the controlled step 2-4 can realize that metal Ni film is annealed into orderly particle when nanowire growth temperature, thereby obtains the GaN nano wire of ordered arrangement.
Claims (2)
1. method for preparing the GaN nano wire, it is characterized in that the cleaning of Sapphire Substrate after, first evaporation metal Ni film; Ni film thickness 5-50nm; The Sapphire Substrate that is covered with the nickel film is put into the HVPE growing system, beginning low-temperature epitaxy GaN nano wire; Growth temperature: 850 ℃ of 500 –; High-purity N
2As carrier gas, total N
2Carrier gas flux 1-5slm; The Ga source adopts conventional high purity metal gallium and high-purity HCl reaction to generate GaCl, HCl flow: 1-20sccm, HCl carrier gas flux 10-200sccm; With high-purity ammonia as nitrogenous source, NH
3Flow: 50 – 500sccm; Growth time 1-10 minute.
2. according to claim 1 with HVPE growing GaN nano wire, it is characterized in that growth temperature is: 650 ℃ of 500-.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103172284A CN102828250A (en) | 2012-08-31 | 2012-08-31 | Growing method for GaN nanowire |
| PCT/CN2013/077974 WO2014032465A1 (en) | 2012-08-31 | 2013-06-26 | METHOD FOR GROWING GaN NANOWIRE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103172284A CN102828250A (en) | 2012-08-31 | 2012-08-31 | Growing method for GaN nanowire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102828250A true CN102828250A (en) | 2012-12-19 |
Family
ID=47331546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103172284A Pending CN102828250A (en) | 2012-08-31 | 2012-08-31 | Growing method for GaN nanowire |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102828250A (en) |
| WO (1) | WO2014032465A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456602A (en) * | 2013-03-18 | 2013-12-18 | 深圳信息职业技术学院 | Method for preparing non-polar surface gallium nitride nanometer cone material |
| WO2014032465A1 (en) * | 2012-08-31 | 2014-03-06 | 南京大学 | METHOD FOR GROWING GaN NANOWIRE |
| CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
| WO2021012496A1 (en) * | 2019-07-22 | 2021-01-28 | 南京大学 | Molecular beam epitaxial growth method for controlling structure and morphology of gan nanowire |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107881554A (en) * | 2017-10-18 | 2018-04-06 | 中国科学院半导体研究所 | In the method for Grown GaN plane nano lines |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080010707A1 (en) * | 2004-10-21 | 2008-01-10 | Sharp Laboratories Of America, Inc. | Ambient environment nanowire sensor |
| JP2008108757A (en) * | 2006-10-23 | 2008-05-08 | Matsushita Electric Works Ltd | Compound semiconductor light-emitting element, illumination apparatus employing the same and manufacturing method of compound semiconductor element |
| CN101229912A (en) * | 2007-12-26 | 2008-07-30 | 中国科学院上海微系统与信息技术研究所 | Method for preparing gallium nitride nano-wire array by using dry etching |
| CN101728248A (en) * | 2008-10-15 | 2010-06-09 | 中国科学院半导体研究所 | Growing method of gallium nitride |
| CN101510504B (en) * | 2009-03-13 | 2010-09-08 | 苏州纳晶光电有限公司 | Transversal epitaxial growth method for nano area of semiconductor film |
| JP2011073894A (en) * | 2009-09-29 | 2011-04-14 | Toyoda Gosei Co Ltd | Method for producing group iii nitride compound semiconductor |
| CN101689484B (en) * | 2007-07-10 | 2012-02-15 | Nxp股份有限公司 | Single crystal growth on a mis-matched substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101898751B (en) * | 2009-05-27 | 2012-08-08 | 中国科学院半导体研究所 | Method for growing group III nitride nanometer material |
| CN102828250A (en) * | 2012-08-31 | 2012-12-19 | 南京大学 | Growing method for GaN nanowire |
-
2012
- 2012-08-31 CN CN2012103172284A patent/CN102828250A/en active Pending
-
2013
- 2013-06-26 WO PCT/CN2013/077974 patent/WO2014032465A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080010707A1 (en) * | 2004-10-21 | 2008-01-10 | Sharp Laboratories Of America, Inc. | Ambient environment nanowire sensor |
| JP2008108757A (en) * | 2006-10-23 | 2008-05-08 | Matsushita Electric Works Ltd | Compound semiconductor light-emitting element, illumination apparatus employing the same and manufacturing method of compound semiconductor element |
| CN101689484B (en) * | 2007-07-10 | 2012-02-15 | Nxp股份有限公司 | Single crystal growth on a mis-matched substrate |
| CN101229912A (en) * | 2007-12-26 | 2008-07-30 | 中国科学院上海微系统与信息技术研究所 | Method for preparing gallium nitride nano-wire array by using dry etching |
| CN101728248A (en) * | 2008-10-15 | 2010-06-09 | 中国科学院半导体研究所 | Growing method of gallium nitride |
| CN101510504B (en) * | 2009-03-13 | 2010-09-08 | 苏州纳晶光电有限公司 | Transversal epitaxial growth method for nano area of semiconductor film |
| JP2011073894A (en) * | 2009-09-29 | 2011-04-14 | Toyoda Gosei Co Ltd | Method for producing group iii nitride compound semiconductor |
Non-Patent Citations (1)
| Title |
|---|
| LIU ZHAN HUI ET AL: "Gallium Nitride Nanowires Grown by", 《CHINESE PHYSIES LETTERS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014032465A1 (en) * | 2012-08-31 | 2014-03-06 | 南京大学 | METHOD FOR GROWING GaN NANOWIRE |
| CN103456602A (en) * | 2013-03-18 | 2013-12-18 | 深圳信息职业技术学院 | Method for preparing non-polar surface gallium nitride nanometer cone material |
| CN103456602B (en) * | 2013-03-18 | 2016-12-07 | 深圳信息职业技术学院 | The preparation method of non-polar surface gallium nitride nanometer cone material |
| CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
| WO2021012496A1 (en) * | 2019-07-22 | 2021-01-28 | 南京大学 | Molecular beam epitaxial growth method for controlling structure and morphology of gan nanowire |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014032465A1 (en) | 2014-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100646696B1 (en) | Nitride semiconductor device and method for manufacturing the same | |
| Kente et al. | Gallium nitride nanostructures: Synthesis, characterization and applications | |
| Choi et al. | Growth and modulation of silicon carbide nanowires | |
| He et al. | Growth and characterization of ternary AlGaN alloy nanocones across the entire composition range | |
| CN106803478B (en) | GaN nanostructure array growth method | |
| CN102828250A (en) | Growing method for GaN nanowire | |
| JP5876408B2 (en) | Fabrication method of nanowire | |
| Suo et al. | Synthetic strategies and applications of GaN nanowires | |
| CN102856172A (en) | Method for preparing low-stress GaN film | |
| CN102828240B (en) | A kind of method preparing GaN film material | |
| CN106757323B (en) | A kind of unstressed InN nanowire growth method | |
| Feng et al. | Direct Growth of GaN Nanowires by Ga and N2 without Catalysis | |
| WO2006137631A1 (en) | Fabrication method of gallium manganese nitride single crystal nanowire | |
| CN103757693B (en) | A kind of growing method of GaN nano wire | |
| CN102134484B (en) | Preparation method of GaN@SiO2 micro material | |
| Li et al. | Growth of InAs nanowires with the morphology and crystal structure controlled by carrier gas flow rate | |
| Shekari et al. | Optical and structural characterizations of GaN nanostructures | |
| Chen et al. | Group III-and group IV-nitride nanorods and nanowires | |
| CN102321915A (en) | A kind of preparation method of Mn doped with Al N monocrystal nano rod | |
| Suo et al. | Three-dimensional single-crystalline GaN hierarchical nanowire architectures | |
| Shekari et al. | Structural characterizations of GaN nanowires grown on Si (111) substrates by thermal evaporation | |
| KR20040092583A (en) | Core-removed nano structure and preparation thereof | |
| CN111893454B (en) | Preparation method of germanium tin nano material under normal pressure | |
| Rozhavskaya et al. | Various types of GaN/InGaN nanostructures grown by MOCVD on Si (111) substrate | |
| Zou et al. | Assembly-line flash synthesis of ZnO nanobelts on metal Zn |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20121219 |