CN101723307A - Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching - Google Patents
Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching Download PDFInfo
- Publication number
- CN101723307A CN101723307A CN200910243541A CN200910243541A CN101723307A CN 101723307 A CN101723307 A CN 101723307A CN 200910243541 A CN200910243541 A CN 200910243541A CN 200910243541 A CN200910243541 A CN 200910243541A CN 101723307 A CN101723307 A CN 101723307A
- Authority
- CN
- China
- Prior art keywords
- wet etching
- rete
- photoresist
- hydrofluoric acid
- buffer solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a method for preparing a semicylindrical minute groove by utilizing two-time film deposition and wet etching, which comprises the following steps of: depositing a film on a quartz substrate by adopting a conventional technology, coating a photoresist on the film, photoetching, developing and firming a mould; using a photoresist graph for shielding and isotropical characteristics of wet etching and using an etching solution to etch the film below the edge of the photoresist graph to form an air gap with certain width; depositing the film made of the same material on the surface of a structure obtained after the wet etching again and removing the photoresist to obtain a slit having the same width with the air gap; and then utilizing the film for shielding and carrying out isotropical etching on the quartz substrate by using a hydrofluoric acid buffer solution through the slit to obtain the semicylindrical minute groove. The slit with the width range of 700 nanometers to 2.5 microns can be prepared by the method without expensive equipment of electron beams, particle beams, dry etching and the like, and then the semicylindrical minute groove with the diameter width range of 700 nanometers to 2.5 microns and the depth range of 350 nanometers to 1.25 microns is obtained through controlling the condition of the wet etching.
Description
Technical field
The present invention relates to a kind of preparation method of hydrofluoric acid buffer solution, relate in particular to a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution.
Technical background
Little/the element of receiving is especially little/receive optical element, all have huge application potential in scientific research, military affairs, field such as civilian.The preparation of micron and sub-micron hydrofluoric acid buffer solution is the difficult point of research.Hydrofluoric acid buffer solution be some labyrinths of preparation little/receive the basis of optical element.Hydrofluoric acid buffer solution has broad application prospects, and for example, is applied to aspects such as super-resolution imaging, SPP nano-photoetching.
Preparation method's one class of semicircle column type groove is a gray scale exposure etching, utilizes the difference of the exposure dose of zones of different photoresist to make the structure graph of exposure area reach desired shape, by etching figure is transferred on the substrate again.As gray scale mask photoetching, mobile mask lithography etc., these methods are fit to the semicolumn type groove structure of processing diameter more than 3 microns, and its shortcoming is to be difficult to prepare the more structure of small-feature-size.It is micron order even hundred nano-scale that some SPP devices need the diameter of hydrofluoric acid buffer solution structure.Though straight write device such as electron beam, ion beam can prepare the figure of this size, its expense costliness and working (finishing) area only have micron dimension, are difficult to satisfy the needs of practical application.We's rule only need be used conventional film deposition techniques, photoetching technique, wet etching technique, just can prepare width and be the thin slit of 100 nanometers to two micron and diameter width scope and be 700 nanometers to 2.5 micron, depth bounds be 350 nanometers to 1.25 micron hydrofluoric acid buffer solution.
Summary of the invention
The technical problem to be solved in the present invention is: at the restriction part of existing microfabrication making, a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution is proposed, this method only need adopt conventional film deposition techniques, photoetching technique, wet etching technique, just can prepare the diameter width scope and be 700 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 350 nanometers to 1.25 micron.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution, and step is as follows:
(1) adopts magnetron sputtering technique or evaporation coating technique depositional coating on quartz substrate, on described rete, be coated with photoresist; The thickness of quartz substrate is 200～3000 μ m, and the thickness of rete is 20～300nm, and the thickness of photoresist is 100～2000nm;
(2) adopting photoetching technique is linear more than 1 micron in preparation live width on the photoresist;
(3) utilize the photoresist figure to shelter and the isotropic characteristics of wet etching, use corrosive liquid to etch away the part rete of below, photoresist lines edge, form the air gap of width range at 100～1000nm;
(4) body structure surface that obtains after described step (3) deposits the rete of same material once more, obtains the slit corresponding to air gap width behind the removal photoresist;
(5) with the rete of described step (1) and described step (4) deposition for sheltering, pass through slit, with substrate etching solution substrate is carried out isotropic etch, obtain the diameter width scope and be 700 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 350 nanometers to 1.25 micron.
Rete in the described step (1) is metal, silicon or organic film, and this rete will play masking action in the quartzy technology of follow-up wet etching.
In the described step (3), described corrosive liquid is the liquid that dechromises, and temperature is 20 °～25 °, and the time of wet etching chromium layer is 3～10 minutes.In the described step (5) substrate is carried out wet etching the time need constantly to stir substrate etching solution.
In the described step (5), described corrosive liquid is a buffered hydrofluoric acid solution, and temperature is 20 °～25 °, and the time of wet etching chromium layer is 10～30 minutes.
The present invention's advantage compared with prior art is: the present invention only need adopt conventional film deposition techniques, photoetching technique, wet etching technique, just can prepare the diameter width scope and be 700 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 350 nanometers to 1.25 micron; Only need to adopt conventional film deposition techniques, photoetching technique, wet etching technique, can greatly reduce the preparation cost of hydrofluoric acid buffer solution; But the processing of the present invention's large tracts of land, the distribution area maximum of the half-cylindrical groove micro-structural of preparation can reach square centimeters up to a hundred; For little/processing of components and parts received provide a kind of accurately, novel, convenient, process approach efficiently.
Description of drawings
Fig. 1 is the flow chart of the inventive method;
Fig. 2 is in the embodiment of the invention 1, the cross-sectional view behind quartz substrate surface chromium plating film and coating photoresist;
Fig. 3 is in the embodiment of the invention 1, adopts the cross-sectional view of the wide bargraphs of conventional lithographic equipment making;
Fig. 4 is in the embodiment of the invention 1, the chromium film of substrate surface is carried out the cross-sectional view of the microstructure graph that obtains behind the wet etching;
Fig. 5 is in the embodiment of the invention 1, the cross-sectional view that obtains behind the chromium layer that sputter 50nm is thick on the structure shown in Figure 3;
Fig. 6 is in the embodiment of the invention 1, adopts LIFT OFF technology to remove the cross-sectional view that obtains behind the photoresist;
Fig. 7 is in the embodiment of the invention 1, places buffered hydrofluoric acid solution to carry out the cross-sectional view of the hydrofluoric acid buffer solution that isotropic etch obtains the structure among Fig. 5;
Fig. 8 is in the embodiment of the invention 1, removes the chromium film, the cross-sectional view of the hydrofluoric acid buffer solution that obtains.
Among the figure: 1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist.
The specific embodiment
Introduce the present invention in detail below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and promptly can realize the full content of claim of the present invention to the technical staff in field by following examples.
(1) selecting thickness is that 360 microns quartz plate is as substrate; Adopt the metallic chromium layer of magnetron sputtering technique in substrate surface deposition one deck 100 nanometer thickness, coating thickness is 1.1 microns an AR-P3100 photoresist (as shown in Figure 2) on the chromium layer.
(2) by exposure, development, hard mould, on photoresist, prepare linear as shown in Figure 3.
(3) as shown in Figure 4, utilize the photoresist figure to shelter and the isotropic characteristics of wet etching, use corrosive liquid to etch away the metallic chromium layer of photoresist lines pattern edge below.Corrosive liquid is the liquid that dechromises, and its proportioning is a 100ml water, 13ml perchloric acid, and nitric acid four ammoniums of 50g, corrosion temperature is 23 ℃, and the time of wet etching chromium layer is 3 minutes and 30 seconds, and the width of the air gap that obtains is 200 nanometers.
(4) body structure surface behind wet etching deposits chromium film (as shown in Figure 5) once more, removes the chromium film that is attached in photoresist and the chromium plating for the second time on the photoresist, obtains chromium film slit as shown in Figure 6 and the air gap same widths.
(5) by chromium film slit, with buffered hydrofluoric acid solution substrate is carried out isotropic etch (as shown in Figure 7), the mol ratio of hydrofluoric acid and ammonium fluoride is 1: 6 in the corrosive liquid, and temperature is 23 ℃, and the time of wet etching quartz is 12 minutes.Spend chrome liquor and remove residual mask membrane layer, the diameter that obtains as shown in Figure 8 is 1 micron, and the degree of depth is the hydrofluoric acid buffer solution of 500 nanometers.
(1) selecting thickness is that 1000 microns quartz plate is as substrate; Adopt the metallic chromium layer of magnetron sputtering technique in substrate surface deposition one deck 50 nanometer thickness, coating thickness is 1.1 microns an AR-P3100 photoresist (as shown in Figure 2) on the chromium film.
(2) by exposure, development, hard mould, on photoresist, prepare linear as shown in Figure 3.
(3) as shown in Figure 4, utilize the photoresist figure to shelter and the isotropic characteristics of wet etching, use corrosive liquid to etch away the metallic chromium layer of photoresist lines pattern edge below.Corrosive liquid is the liquid that dechromises, and its proportioning is a 100ml water, 13ml perchloric acid, and nitric acid four ammoniums of 50g, corrosion temperature is 23 ℃, and the time of wet etching chromium layer is 2 minutes, and the width of the air gap that obtains is 150 nanometers.
(4) body structure surface behind wet etching deposits chromium film (as shown in Figure 5) once more, removes the chromium film that is attached in photoresist and the chromium plating for the second time on the photoresist, obtains chromium film slit as shown in Figure 6 and the air gap same widths.Embodiment should provide concrete chromium film slit width.
(5) by slit, with buffered hydrofluoric acid solution substrate is carried out isotropic etch (as shown in Figure 7), the mol ratio of hydrofluoric acid and ammonium fluoride is 1: 6 in the corrosive liquid, and temperature is 23 ℃, and the time of wet etching quartz is 7 minutes.Spend chrome liquor and remove residual mask membrane layer, the diameter width scope that obtains as shown in Figure 8 is 700 nanometers, the hydrofluoric acid buffer solution of depth bounds 350 nanometers.
The hydrofluoric acid buffer solution that embodiment 3 makes 2 microns of diameters, manufacturing process is as shown in Figure 1, and is specific as follows:
(1) selecting thickness is that 1000 microns quartz plate is as substrate; Adopt the metallic chromium layer of magnetron sputtering technique in substrate surface deposition one deck 150 nanometer thickness, coating thickness is 1.1 microns an AR-P3100 photoresist (as shown in Figure 2) on the chromium film.
(2) by exposure, development, hard mould, on photoresist, prepare linear as shown in Figure 3.
(3) as shown in Figure 4, utilize the photoresist figure to shelter and the isotropic characteristics of wet etching, use corrosive liquid to etch away the metallic chromium layer of photoresist lines pattern edge below.Corrosive liquid is the liquid that dechromises, and its proportioning is a 100ml water, 13ml perchloric acid, and nitric acid four ammoniums of 50g, corrosion temperature is 23 ℃, and the time of wet etching chromium layer is 5 minutes, and the width of the air gap that obtains is 400 nanometers.
(4) body structure surface behind wet etching deposits chromium film (as shown in Figure 5) once more, removes the chromium film that is attached in photoresist and the chromium plating for the second time on the photoresist, obtains as shown in Figure 6 and the slit the air gap same widths.
(5) by slit, with buffered hydrofluoric acid solution substrate is carried out isotropic etch (as shown in Figure 7), the mol ratio of HF and NH4F is 1: 6 in the corrosive liquid, and temperature is 23 ℃, and the time of wet etching quartz is 30 minutes.Spend chrome liquor and remove residual mask membrane layer, the diameter width that obtains as shown in Figure 8 is 2 microns, and the degree of depth is 1 micron a hydrofluoric acid buffer solution.
The part that the present invention does not elaborate belongs to the common practise of this area.
Claims (5)
1. method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution is characterized in that step is as follows:
(1) adopt magnetron sputtering technique or evaporation coating technique depositional coating on quartz substrate, be coated with photoresist on described rete, the thickness of quartz substrate is 200～2000 μ m, and the thickness of rete is 20～300nm, and the thickness of photoresist is 100～2000nm;
(2) adopting photoetching technique is linear more than 1 micron in preparation live width on the photoresist;
(3) utilize the photoresist figure to shelter and the isotropic characteristics of wet etching, use corrosive liquid to etch away the part rete of below, photoresist lines edge, form the air gap of width range at 100～1000nm;
(4) body structure surface that obtains after described step (3) deposits the rete of same material once more, obtains the rete slit corresponding to air gap width behind the removal photoresist;
(5) with the rete of described step (1) and described step (4) deposition for sheltering, by the rete slit, with substrate etching solution substrate is carried out isotropic etch, obtain the diameter width scope and be 700 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 350 nanometers to 1.25 micron.
2. a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution according to claim 1, it is characterized in that: the rete in the described step (1) is metal, silicon or organic film.
3. a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution according to claim 1, it is characterized in that: in the described step (3), described corrosive liquid is the liquid that dechromises, and temperature is 20 °～25 °, and the time of wet etching chromium layer is 3～10 minutes.
4. a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution according to claim 1 is characterized in that: in the described step (5) substrate is carried out wet etching the time need constantly stirring substrate etching solution.
5. a kind of method of utilizing twice rete deposition and wet etching to prepare hydrofluoric acid buffer solution according to claim 1, it is characterized in that: in the described step (5), described corrosive liquid is a buffered hydrofluoric acid solution, temperature is 20 °～25 °, and the time of wet etching quartz substrate is 10～30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102435416A CN101723307B (en) | 2009-12-25 | 2009-12-25 | Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102435416A CN101723307B (en) | 2009-12-25 | 2009-12-25 | Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101723307A true CN101723307A (en) | 2010-06-09 |
| CN101723307B CN101723307B (en) | 2011-12-14 |
Family
ID=42444967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102435416A Expired - Fee Related CN101723307B (en) | 2009-12-25 | 2009-12-25 | Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101723307B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153046A (en) * | 2010-12-22 | 2011-08-17 | 中国科学院光电技术研究所 | Method for preparing semicylindrical superfine slot by combining twice membranous layer deposition, dry etching and wet etching |
| CN102259828A (en) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | Isolation cavity body manufacturing method compatible with semiconductor process, and isolation cavity body |
| CN102275866A (en) * | 2011-07-11 | 2011-12-14 | 西安交通大学 | Manufacturing process of microfluid channel with heating function |
| CN102328903A (en) * | 2011-09-29 | 2012-01-25 | 西安交通大学 | Large-area nano-seam electrode parallel manufacturing method |
| CN103605260A (en) * | 2013-12-02 | 2014-02-26 | 中国科学院微电子研究所 | Preparation method for nanoscale EUV mask |
| CN103869415A (en) * | 2012-12-17 | 2014-06-18 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method for ridge optical waveguide |
| CN103901535A (en) * | 2012-12-29 | 2014-07-02 | 鸿富锦精密工业（深圳）有限公司 | Vertical optical waveguide and manufacturing method thereof |
| CN111137845A (en) * | 2019-12-16 | 2020-05-12 | 中芯集成电路制造(绍兴)有限公司 | Method for forming patterned metal layer |
| CN112147848A (en) * | 2019-06-26 | 2020-12-29 | 山东华光光电子股份有限公司 | Preparation method of small-size groove |
| CN114272965A (en) * | 2021-12-27 | 2022-04-05 | 广东省科学院半导体研究所 | Preparation method of glass substrate chip, glass substrate chip and application |
-
2009
- 2009-12-25 CN CN2009102435416A patent/CN101723307B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153046A (en) * | 2010-12-22 | 2011-08-17 | 中国科学院光电技术研究所 | Method for preparing semicylindrical superfine slot by combining twice membranous layer deposition, dry etching and wet etching |
| CN102259828A (en) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | Isolation cavity body manufacturing method compatible with semiconductor process, and isolation cavity body |
| CN102259828B (en) * | 2011-07-04 | 2014-01-01 | 上海先进半导体制造股份有限公司 | Isolation cavity body manufacturing method compatible with semiconductor process, and isolation cavity body |
| CN102275866A (en) * | 2011-07-11 | 2011-12-14 | 西安交通大学 | Manufacturing process of microfluid channel with heating function |
| CN102275866B (en) * | 2011-07-11 | 2014-01-29 | 西安交通大学 | Manufacturing process of microfluid channel with heating function |
| CN102328903A (en) * | 2011-09-29 | 2012-01-25 | 西安交通大学 | Large-area nano-seam electrode parallel manufacturing method |
| CN102328903B (en) * | 2011-09-29 | 2014-04-23 | 西安交通大学 | Large-area nano-seam electrode parallel manufacturing method |
| CN103869415A (en) * | 2012-12-17 | 2014-06-18 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method for ridge optical waveguide |
| CN103901535A (en) * | 2012-12-29 | 2014-07-02 | 鸿富锦精密工业（深圳）有限公司 | Vertical optical waveguide and manufacturing method thereof |
| CN103605260A (en) * | 2013-12-02 | 2014-02-26 | 中国科学院微电子研究所 | Preparation method for nanoscale EUV mask |
| CN112147848A (en) * | 2019-06-26 | 2020-12-29 | 山东华光光电子股份有限公司 | Preparation method of small-size groove |
| CN111137845A (en) * | 2019-12-16 | 2020-05-12 | 中芯集成电路制造(绍兴)有限公司 | Method for forming patterned metal layer |
| CN114272965A (en) * | 2021-12-27 | 2022-04-05 | 广东省科学院半导体研究所 | Preparation method of glass substrate chip, glass substrate chip and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101723307B (en) | 2011-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101723307B (en) | Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching | |
| Black et al. | Patterning disorder in monolayer resists for the fabrication of sub-100-nm structures in silver, gold, silicon, and aluminum | |
| CN101508419B (en) | Processing method for nano-pole forest | |
| CN110923623A (en) | Preparation method of magnetic field adsorption auxiliary mask evaporation micro-nano structure | |
| CN109095435A (en) | A kind of three-dimensional all-metal micro-cavity structure surface phasmon array-processing method | |
| CN101419400A (en) | Dry method etching method by chrome metal mask | |
| Du et al. | Fabrication of polymer nanowires via maskless O2 plasma etching | |
| CN101736287B (en) | Method for fabricating smei-cylindrical groove by shadow evaporation and wet etching | |
| CN101566799B (en) | Method for preparing hollowed-out polyimide evaporation shadow mask | |
| CN102153046A (en) | Method for preparing semicylindrical superfine slot by combining twice membranous layer deposition, dry etching and wet etching | |
| CN111071985A (en) | Method for securing metal nanoparticles with an anodized aluminum film incorporating a sacrificial layer | |
| Hu et al. | Nano-fabrication with a flexible array of nano-apertures | |
| Wang et al. | Fast fabrication of silicon nanopillar array using electron beam lithography with two-layer exposure method | |
| Guo et al. | Superlens-enhanced laser interference lithography | |
| CN101024484B (en) | Method for realizing surface plasma structure formation | |
| Nabar et al. | A nanoporous silicon nitride membrane using a two-step lift-off pattern transfer with thermal nanoimprint lithography | |
| CN106185792A (en) | A kind of population parameter controllable method for preparing of super-hydrophobic micro-nano compound structure | |
| Mao et al. | Nanopatterning using a simple bi-layer lift-off process for the fabrication of a photonic crystal nanostructure | |
| CN101813884A (en) | Method for preparing nano-structured matrix on surface of uneven substrate | |
| CN101126896B (en) | Super resolution lithography method based on PDMS template and silver board material | |
| Du et al. | Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography | |
| Guo et al. | Fabrication of 2D silicon nano-mold by side etch lift-off method | |
| CN109668631B (en) | Preparation method of large-area and low-cost superconducting nanowire single photon detector | |
| CN102495526B (en) | Optical exposing method, and method for applying optical exposure in preparation of silicon material vertical hollow structure | |
| CN111115564A (en) | Method for preparing micro-nano structure by dry transfer printing of photoresist |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111214 Termination date: 20141225 |
|
| EXPY | Termination of patent right or utility model |