CN102275866A - Manufacturing process of microfluid channel with heating function - Google Patents
Manufacturing process of microfluid channel with heating function Download PDFInfo
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- CN102275866A CN102275866A CN2011101931007A CN201110193100A CN102275866A CN 102275866 A CN102275866 A CN 102275866A CN 2011101931007 A CN2011101931007 A CN 2011101931007A CN 201110193100 A CN201110193100 A CN 201110193100A CN 102275866 A CN102275866 A CN 102275866A
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Abstract
The invention discloses a manufacturing process of a microfluid channel with a heating function, which comprises the following steps of: firstly cleaning a transparent quartz glass substrate; preparing a layer of SU-8 photoresist on the surface of the substrate; performing ultraviolet exposure, wherein a mask plate pattern adopted in the ultraviolet exposure is a pattern of a microfluid channel structure; then preparing a nano metal wire structure, wherein the preparation methods include wet corrosion and Lift-off; and finally soaking with a SU-8 standard developing solution by taking the prepared nano metal wire as a shelter to remove the unexposed area and form a microfluid channel and a suspended nano metal wire at the same time. When the nano metal wire is prepared, the microfluid channel is obtained at the same time; the nano metal wire is processed and formed by use of an electron beam direct writing process; and the microfluid channel has a smaller and more precise dimension, and can be used as a support of a nano metal lead.
Description
Technical field
The invention belongs to the manufacturing process of microfluidic channel in the micro-nano field, be specifically related to a kind of manufacturing process with microfluidic channel of heating function.
Technical background
Current, along with the MEMS product weed out the old and bring forth the new with application, DNA biochip, chip on breadboard research and development, driving, mixing and the heater of microfluid are had higher requirement.In order to make that the driving of fluid in fluid channel realizes flowing quickly and fully mixing, need heat the fluid channel device usually.Method commonly used has: ultrasonic vibration, utilize the mechanical energy of polar fluid molecule to be converted into heat energy; But this way has two main fatal defectives: on the one hand, ultrasonic energy uncontrollable, on the other hand, the too high meeting of frequency causes harmful noise source to whole device.In addition, MEMS microfluidic sensing device requires very low caloric value, can not cause the influence outside the ability to bear to guarantee overall performance to the MEMS device.Secondly, the integrated encapsulation of MEMS micro-fluidic device requires good airproof performance, it is minimum that the volatilization of fluid in fluid channel reaches, then to make the volume of METAL HEATING PROCESS resistance and the thickness that area does not allow to surpass lead-in wire, therefore, adopt conventional method to be difficult to realize the making of nano metal lead.
The folding shape of the general employing of common microfluid heating resistor in order to prolong the size of resistance as much as possible, provides the Joule heat of greater efficiency for fluid.And be to adopt the method for mask ultraviolet photolithographic, metal sputtering and lift-off to realize.But the METAL HEATING PROCESS resistance of Huo Deing is micro-meter scale like this, if under the littler more accurate situation of yardstick of fluid channel, this METAL HEATING PROCESS resistance then can not meet the demands.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of manufacturing process with microfluidic channel of heating function, adopt the technology of electron-beam direct writing to carry out shaping of nano metal silk, the yardstick of its fluid channel is littler more accurate, can be used as the support of nano metal lead.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of manufacturing process with microfluidic channel of heating function may further comprise the steps:
1) with the transparency silica glass base material is 7: 3 dense H in volume ratio
2SO
4And H
2O
2Mixture at 90 ℃ of water-bath 30min, clean earlier with acetone and IPA, use washed with de-ionized water again, then in oven dry more than 150 ℃,
2) prepare one deck SU-8 photoresist at the transparency silica glass substrate surface with the spraying or the mode of spin coating, the thickness of SU-8 photoresist be several microns to hundreds of microns, baking is handled before carrying out again, in 65-95 ℃ of baking 10min,
3) the transparency silica glass base material that has prepared the SU-8 photoresist is carried out the 365nm uv-exposure, it is the fluid channel structure graph that uv-exposure adopts the mask plate figure, the transparency silica glass base material after the exposure is carried out the back baking handle, and in 65-95 ℃ of baking 20min,
4) preparation nano metal silk structure, preparation method have two kinds of wet etching and Lift-off,
The method of wet etching: the metal level that adopts magnetron sputtering evaporation tens nano thickness on the SU-8 structure sheaf of the transparency silica glass base material that has prepared the SU-8 photoresist, metal level is a kind of metal level of metal or the metal level of two kinds of dissimilar metals, the electron beam resist ZEP520A of the hundreds of nanometers of spin coating one deck on metal level then, the employing accelerating potential is that the beamwriter lithography equipment of 30kV carries out electron-beam direct writing processing, and the beamwriter lithography glue developing solution of the standard of employing develops, form periodic nanostructured figure, do masking layer with the nanostructured of the resulting electron beam resist in back that develops then, adopt chemical attack reagent that the exposed portions metal level is carried out wet etching, form the nano metal line graph, adopt chlorobenzene to soak at last and remove electron beam resist, form the nano metal silk;
The method of Lift-off: spin coating one layer thickness is the electron beam resist of hundreds of nanometer on the SU-8 photoresist layer of the transparency silica glass base material that has prepared the SU-8 photoresist earlier, the employing accelerating potential is that the beamwriter lithography equipment of 30kV carries out electron-beam direct writing processing, form periodic electron beam resist nano graph, adopt the metal level of magnetron sputtering apparatus evaporation tens nanometer on the electron beam resist nano graph then, metal level is a kind of metal level of metal or the metal level of two kinds of dissimilar metals, adopt chlorobenzene to soak the metal that lift-off removes electron beam resist and top thereof at last, form the nano metal silk;
5) develop, as sheltering, adopt the immersion of SU-8 standard developer, remove unexposed zone, form fluid channel and unsettled nano metal silk simultaneously with the nano metal silk of preparation.
Characteristics and advantage that the present invention has are: in preparation nano metal silk, also produced fluid channel, so this method has very strong operability; The SU-8 fluid channel of made is MEMS chip or Lab-on-chip chip lab material and version commonly used, has good bio-compatibility and chemical analysis miscellaneous function; Prepared nano metal silk still has stronger mechanical strength and electricity I-V characteristic preferably under microcosmic.Wire input millivolt level other voltage good to lead packages makes wire produce Joule heat, thereby realizes the fluid in the fluid channel of part is heated, and promotes the abundant mixing and the analysis of microfluid.
Description of drawings
Fig. 1-1～Fig. 7-1 prepares the flow chart of nano metal silk structure for the present invention adopts wet etching, wherein:
Fig. 1-1 is preparation SU-8 and uv-exposure schematic diagram on the quartz glass substrate 1 of the present invention;
Fig. 2-1 prepares first metal 5 and second metal, 6 schematic diagrames respectively for magnetron sputtering of the present invention;
Fig. 3-1 is the present invention spin coating electron beam resist 7 and graphical 8 structural representations of electron-beam direct writing on metal level 6;
Fig. 4-1 obtains nano metal silk 9 structural representations for the present invention shelters wet method corroding metal layer 6 with electron-beam direct writing figure 8;
Fig. 5-1 removes the schematic diagram of electron beam resist 7 for chlorobenzene solvent dissolving of the present invention;
Fig. 6-1 forms fluid channel 10 structural representations for the present invention shelters with the unexposed zone of SU-8 developing solution dissolution with nano metal silk 9;
Fig. 7-1 shelters the vertical view that forms fluid channel 10 structural representations with the unexposed zone of SU-8 developing solution dissolution for the present invention with nano metal silk 9.
Fig. 1-2～Fig. 7-2 prepares the flow chart of nano metal silk structure for the present invention adopts Lift-off, wherein:
Fig. 1-2 is preparation SU-8 and uv-exposure schematic diagram on the quartz glass substrate 1 of the present invention;
Fig. 2-2 is the schematic diagram of the present invention's spin coating electron beam resist 7 on the SU-8 layer;
Fig. 3-2 is electron-beam direct writing patterned structures 8 schematic diagrames of the present invention;
Fig. 4-2 prepares first metal 5 and second metal, 6 schematic diagrames respectively for magnetron sputtering of the present invention;
Fig. 5-2 removes the schematic diagram of electron beam resist and upper metal for chlorobenzene lift-off of the present invention;
Fig. 6-2 forms fluid channel 10 and unsettled nano metal silk 9 structural representations for the present invention with the unexposed zone of SU-8 developing solution dissolution;
Fig. 7-2 forms the vertical view of fluid channel 10 and unsettled nano metal silk 9 structural representations with the unexposed zone of SU-8 developing solution dissolution for the present invention.
The specific embodiment
Describe the present invention below in conjunction with accompanying drawing and enforcement.
Embodiment 1-adopts wet etching to prepare nano metal silk structure
A kind of manufacturing process with microfluidic channel of heating function may further comprise the steps:
1) with transparency silica glass base material 1 is 7: 3 dense H in volume ratio
2SO
4And H
2O
2Mixture at 90 ℃ of water-bath 30min, clean earlier with acetone and IPA, 45 ℃ of ultrasonic 15min of acetone, the ultrasonic 15min of IPA normal temperature uses washed with de-ionized water 10min again, then in oven dry more than 150 ℃,
2) mode with spraying or spin coating prepares one deck SU-8 photoresist 2 on transparency silica glass base material 1 surface, and the thickness of SU-8 photoresist 2 is 1-100um, and baking is handled before carrying out again, in 65-95 ℃ of baking 10min,
3) with reference to Fig. 1-1, the transparency silica glass base material that has prepared the SU-8 photoresist is carried out 365nm uv-exposure 4, time for exposure 20-150s, uv-exposure 4 mask plate that adopts 3 figures are the fluid channel structure graph, transparency silica glass base material after the exposure is carried out the back baking to be handled, in 65-95 ℃ of baking 20min
4) preparation nano metal silk structure, with reference to Fig. 2-1, preparation method is the method for wet etching, adopt the first metal layer 5 and second metal level 6 of magnetron sputtering evaporation tens nano thickness on the SU-8 structure sheaf of the transparency silica glass base material that has prepared the SU-8 photoresist, the first metal layer 5 adopts Cr, and thickness is 30nm; Second metal level 6 adopts Au, thickness is 50nm, with reference to Fig. 3-1, the electron beam resist 7 of the hundreds of nanometers of spin coating one deck on second metal level 6 then, 180 ℃ of hot plate bakings, baking 3min, the employing accelerating potential is that the beamwriter lithography equipment of 30kV carries out electron-beam direct writing processing, and adopt the beamwriter lithography glue developing solution of standard to develop, and form the figure 8 in 100nm live width 500nm cycle, do masking layer with the nanostructured of the resulting electron beam resist in back that develops then, with reference to Fig. 4-1, adopt chemical attack reagent that the exposed portions metal level is carried out wet etching, corrode Au, with ammonium ceric nitrate+acetic acid solution corrosion Cr with iodine solution, form the nano metal line graph, with reference to Fig. 5-1, adopt chlorobenzene to soak at last and remove electron beam resist, form nano metal silk 9;
5) develop,, as sheltering, adopt the immersion of SU-8 standard developer, remove unexposed zone, form fluid channel 10 and unsettled nano metal silk 9 simultaneously with the nano metal silk 9 of preparation with reference to Fig. 6-1 and Fig. 7-1.
Embodiment 2-adopts Lift-off to prepare nano metal silk structure
A kind of manufacturing process with microfluidic channel of heating function may further comprise the steps:
1) with transparency silica glass base material 1 is 7: 3 dense H in volume ratio
2SO
4And H
2O
2Mixture at 90 ℃ of water-bath 30min, clean earlier with acetone and IPA, 45 ℃ of ultrasonic 15min of acetone, the ultrasonic 15min of IPA normal temperature uses washed with de-ionized water 10min again, nitrogen dries up, then in oven dry more than 150 ℃,
2) mode with spraying or spin coating prepares one deck SU-8 photoresist 2 on transparency silica glass base material 1 surface, and the thickness of SU-8 photoresist 2 is 1-100um, and baking is handled before carrying out again, in 65-95 ℃ of baking 10min,
3) with reference to Fig. 1-2, the transparency silica glass base material 1 that has prepared SU-8 photoresist 2 is carried out 365nm ultraviolet light 4 uv-exposure 20-150s, mask plate that uv-exposure adopts 3 figures are the fluid channel structure graph, transparency silica glass base material 1 after the exposure is carried out the back baking to be handled, in 65-95 ℃ of baking 20min
4) preparation nano metal silk structure, preparation method is the method for Lift-off, with reference to Fig. 2-2, earlier spin coating one layer thickness is the electron beam resist 7 of hundreds of nanometer on 2 layers of the SU-8 photoresists of the transparency silica glass base material 1 that has prepared SU-8 photoresist 2,180 ℃ of hot plate bakings, 3min, with reference to Fig. 3-2, the employing accelerating potential is that the beamwriter lithography equipment of 30kV carries out electron-beam direct writing processing, form the figure 8 in 100nm live width 500nm cycle,, adopt first metal 5 and second metal 6 of magnetron sputtering apparatus evaporation tens nanometer on the electron beam resist nano graph then with reference to Fig. 4-2, first metal 5 is Cr, and thickness is 30nm; Second metal 6 is Au, and thickness is 50nm; With reference to Fig. 5-2, adopt chlorobenzene to soak at last, lift-off removes the metal 5,6 of electron beam resist 7 and top thereof, forms nano metal silk 9;
5) develop,, as sheltering, adopt the immersion of SU-8 standard developer, remove unexposed zone, form fluid channel 10 and unsettled nano metal silk 9 simultaneously with the nano metal silk 9 of preparation with reference to Fig. 6-2 and Fig. 7-2.
Claims (1)
1. the manufacturing process with microfluidic channel of heating function is characterized in that, may further comprise the steps:
1) with the transparency silica glass base material is 7: 3 dense H in volume ratio
2SO
4And H
2O
2Mixture at 90 ℃ of water-bath 30min, clean earlier with acetone and IPA, use washed with de-ionized water again, then in oven dry more than 150 ℃,
2) prepare one deck SU-8 photoresist at the transparency silica glass substrate surface with the spraying or the mode of spin coating, the thickness of SU-8 photoresist be several microns to hundreds of microns, baking is handled before carrying out again, in 65-95 ℃ of baking 10min,
3) the transparency silica glass base material that has prepared the SU-8 photoresist is carried out the 365nm uv-exposure, it is the fluid channel structure graph that uv-exposure adopts the mask plate figure, the transparency silica glass base material after the exposure is carried out the back baking handle, and in 65-95 ℃ of baking 20min,
4) preparation nano metal silk structure, preparation method have two kinds of wet etching and Lift-off,
The method of wet etching: the metal level that adopts magnetron sputtering evaporation tens nano thickness on the SU-8 structure sheaf of the transparency silica glass base material that has prepared the SU-8 photoresist, metal level is a kind of metal level of metal or the metal level of two kinds of dissimilar metals, the electron beam resist ZEP520A of the hundreds of nanometers of spin coating one deck on metal level then, the employing accelerating potential is that the beamwriter lithography equipment of 30kV carries out electron-beam direct writing processing, and the beamwriter lithography glue developing solution of the standard of employing develops, form periodic nanostructured figure, do masking layer with the nanostructured of the resulting electron beam resist in back that develops then, adopt chemical attack reagent that the exposed portions metal level is carried out wet etching, form the nano metal line graph, adopt chlorobenzene to soak at last and remove electron beam resist, form the nano metal silk;
The method of Lift-off: spin coating one layer thickness is the electron beam resist of hundreds of nanometer on the SU-8 photoresist layer of the transparency silica glass base material that has prepared the SU-8 photoresist earlier, the employing accelerating potential is that the beamwriter lithography equipment of 30kV carries out electron-beam direct writing processing, form periodic electron beam resist nano graph, adopt the metal level of magnetron sputtering apparatus evaporation tens nanometer on the electron beam resist nano graph then, metal level is a kind of metal level of metal or the metal level of two kinds of dissimilar metals, adopt chlorobenzene to soak the metal that lift-off removes electron beam resist and top thereof at last, form the nano metal silk;
5) develop, as sheltering, adopt the immersion of SU-8 standard developer, remove unexposed zone, form fluid channel and unsettled nano metal silk simultaneously with the nano metal silk of preparation.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016065857A1 (en) * | 2014-10-30 | 2016-05-06 | 京东方科技集团股份有限公司 | Microsensor body and method for manufacturing same, and microsensor |
| CN111468018A (en) * | 2020-04-16 | 2020-07-31 | 西南交通大学 | Flexible active micro-mixer device integration system and preparation method |
| CN111747372A (en) * | 2019-03-26 | 2020-10-09 | 北京清正泰科技术有限公司 | Metal cover graphite island without edge protrusions and preparation method thereof |
| CN113788452A (en) * | 2021-08-31 | 2021-12-14 | 上海交通大学 | Processing method of fine micro-nano glass structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731280A (en) * | 2005-08-08 | 2006-02-08 | 西安交通大学 | Manufacturing process of MEMS impression template based on wet etching |
| CN101037185A (en) * | 2007-01-12 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Method for making nano-groove on quartz glass |
| CN101204603A (en) * | 2007-12-14 | 2008-06-25 | 西安交通大学 | Embedded MENS bioelectrode and preparation technology thereof |
| CN101723307A (en) * | 2009-12-25 | 2010-06-09 | 中国科学院光电技术研究所 | Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching |
-
2011
- 2011-07-11 CN CN201110193100.7A patent/CN102275866B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731280A (en) * | 2005-08-08 | 2006-02-08 | 西安交通大学 | Manufacturing process of MEMS impression template based on wet etching |
| CN101037185A (en) * | 2007-01-12 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Method for making nano-groove on quartz glass |
| CN101204603A (en) * | 2007-12-14 | 2008-06-25 | 西安交通大学 | Embedded MENS bioelectrode and preparation technology thereof |
| CN101723307A (en) * | 2009-12-25 | 2010-06-09 | 中国科学院光电技术研究所 | Method for preparing semicylindrical minute groove by utilizing secondary film deposition and wet etching |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016065857A1 (en) * | 2014-10-30 | 2016-05-06 | 京东方科技集团股份有限公司 | Microsensor body and method for manufacturing same, and microsensor |
| US9796577B2 (en) | 2014-10-30 | 2017-10-24 | Boe Technology Group Co., Ltd. | Micro-sensor body and method for manufacturing the same, as well as micro-sensor |
| CN111747372A (en) * | 2019-03-26 | 2020-10-09 | 北京清正泰科技术有限公司 | Metal cover graphite island without edge protrusions and preparation method thereof |
| CN111468018A (en) * | 2020-04-16 | 2020-07-31 | 西南交通大学 | Flexible active micro-mixer device integration system and preparation method |
| CN113788452A (en) * | 2021-08-31 | 2021-12-14 | 上海交通大学 | Processing method of fine micro-nano glass structure |
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| CN102275866B (en) | 2014-01-29 |
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