CN113788452A - Processing method of fine micro-nano glass structure - Google Patents
Processing method of fine micro-nano glass structure Download PDFInfo
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- CN113788452A CN113788452A CN202111014187.7A CN202111014187A CN113788452A CN 113788452 A CN113788452 A CN 113788452A CN 202111014187 A CN202111014187 A CN 202111014187A CN 113788452 A CN113788452 A CN 113788452A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Abstract
The invention discloses a processing method of a fine micro-nano glass structure, which comprises the following steps: preparing a glass substrate, and cleaning and blow-drying the glass substrate; when the mask material is a non-photoresist material, depositing a mask film on the glass substrate, and then coating photoresist; when the mask material is a photoresist material, coating photoresist on the glass substrate; transferring a structure to be processed to the photoresist on the surface of the substrate by adopting a photoetching mode; when the mask material is a non-photoresist material, etching the mask material, and then etching the glass substrate; when the mask material is a photoresist material, only the glass substrate is etched; and removing the photoresist and the mask material by using a dry etching or wet etching method to form a final glass device structure. By adopting the preparation process, the glass etching speed can reach 710nm/min, the roughness is reduced to be below 40nm, and the verticality of the side wall is close to 90 degrees.
Description
Technical Field
The invention relates to the technical field of micro-nano glass structure preparation, and relates to a processing method of a fine micro-nano glass structure.
Background
With the development of micro-nano technology and the continuous progress of processing technology, the glass material has excellent dielectric property, thermal expansion coefficient similar to that of silicon, good thermal stability and properties which are not possessed by silicon, such as excellent optical properties, surface properties and the like, is regarded as one of ideal micro-nano processing materials, and has wide application in the fields of optical communication, micro-electro-mechanical systems, radio frequency, micro-nano fluidic devices and three-dimensional integration. For example, although the conventional wet etching glass has high speed, the isotropic etching characteristic of the glass causes that the glass is limited in the processing of structures with steep side walls and large depth-to-width ratio (more than 2: 1), and the dry etching has the advantages of accurate and controllable etching depth, high etching surface quality and the like due to the specific anisotropy of the etching direction, and is increasingly applied to the processing of micro-nano glass devices. However, since the glass substrate contains SiO as a main component2But still contains some impurity material, resulting in an unfavorable dry etching rate using reactive ions and a difficult morphology control.
The patent publication No. CN 105693102A is found by searching the existing patent documents, and relates to a mask for quartz glass acid etching and an acid etching method for quartz glass pendulous reed, wherein the mask takes fluorocarbon rubber as a substrate, and the properties of the rubber film are adjusted by adding a curing agent with the mass fraction of 5-15% and a diluent with the mass fraction of 1-20%; the etching method comprises the steps of mask coating, pattern cutting, heating and curing, etching and demolding. However, this patent suffers from the following disadvantages: the mask material of the patent is not compatible with a micro-nano processing technology and cannot be applied to the processing of structures with micro-nano sizes of glass. The patent is just based on the micro-nano processing technology of the semiconductor, and the combination and development are carried out, and the micro-nano processing technology is just aiming at the fine processing of the micro-nano structure of the glass.
Disclosure of Invention
The invention aims to provide a processing method of a fine micro-nano glass structure aiming at the limitation of the existing micro-nano glass structure preparation method.
The purpose of the invention is realized by the following technology:
the invention relates to a processing method of a fine micro-nano glass structure, which comprises the following steps:
s1: preparing a glass substrate, and cleaning and blow-drying the glass substrate;
s2: selecting a mask material, and performing S3 when the mask material is a non-photoresist material; when the mask material is a photoresist material, performing S4;
s3: depositing a mask film on a glass substrate, and coating a photoresist;
s4: coating photoresist on a glass substrate;
s5: transferring a structure to be processed to the photoresist on the surface of the substrate by adopting a photoetching mode;
s6: according to the mask material, when the mask material is a non-photoresist material, etching the mask material, and then etching the glass substrate; when the mask material is a photoresist material, only the glass substrate is etched;
s7: and removing the mask material by using a dry etching or wet etching method to form a final glass device structure.
In one embodiment of the present invention, the glass substrate in step S1 is made of quartz glass or borosilicate glass, and has a thickness of 100 μm to 2 mm.
As an embodiment of the present invention, the non-photoresist material in step S2 includes one or a combination of aluminum, chromium, gold, titanium, amorphous silicon, and polysilicon thin films.
As one embodiment of the present invention, the thickness of the mask material in step S2 is the product of the etch selectivity of the mask to the glass and the glass etch depth.
As one embodiment of the present invention, the mask film is deposited in step S3 by sputtering, chemical vapor deposition, or evaporation deposition.
As an embodiment of the present invention, the photolithography method in step S5 is: when the minimum size of the structure to be processed is 8nm-1 μm, selecting a method of electron beam direct writing exposure, laser direct writing or step-by-step photoetching; when the minimum size of the structure to be processed is 1-100 μm, the ultraviolet exposure mode is selected.
As an embodiment of the present invention, the etching manner in step S6 is: when the minimum size of the structure to be processed is less than 10 microns, the ion beam etching or the inductively coupled reactive ion technology is selected for etching, and when the minimum size of the structure to be processed is 10 microns-100 microns, the wet etching, the ion beam etching or the inductively coupled reactive ion technology is selected for etching.
As an embodiment of the present invention, the wet etching is performed using an HF acid solution.
As an embodiment of the present invention, when etching a glass substrate by inductively coupled reactive ion technique, CHF is used as the fluorine-based gas of the inductively coupled reactive ions3、C2F6、C4F8Or CF4。
As an embodiment of the invention, when the mask material is etched by using the inductively coupled reactive ion technology, the etching gas of the inductively coupled reactive ion adopts boron trichloride, chlorine or argon.
As an embodiment of the invention, the gas pressure of the inductively coupled reactive ion etching glass substrate is 35 mTorr-120 mTorr, and the gas flow is 35sccm-200 sccm; the etching power is 100W-1400W.
As an embodiment of the invention, the bias radio frequency power of the inductively coupled reactive ion etching glass substrate is 200W-500W, and the etching temperature is 40 ℃ to 60 ℃.
As an embodiment of the present invention, the ion beam etching process comprises: the etching gas is argon, the gas flow is 6sccm-10sccm, the gas pressure is 0.01 mTorr-0.3 mTorr, and the etching beam current is 70 mA-120 mA.
Compared with the prior art, the method has the advantages that through optimization of process combination, selection of a proper mask film and screening of processing parameters, adjustment of parameters such as etching gas flow, combination ratio, radio frequency source power, bias voltage and etching temperature, and on the premise of ensuring that good side wall verticality and morphology roughness are obtained, the etching rate reaches 710 nm/min. Compared with the prior common process, the etching rate is improved by nearly two times, the roughness is reduced to below 40nm from the prior 200nm-300nm, and the verticality of the side wall is improved to nearly 90 degrees from 70 degrees. The preparation method of the invention is believed to be widely applied to the processing of glass devices in the fields of optical communication, radio frequency, micro-electro-mechanical systems, micro-fluidic chips, microwaves and three-dimensional integration.
Specifically, the method has the following beneficial effects:
(1) the structure size can be accurate to the precision of tens of nanometers by combining electron beam lithography and etching parameters, and the etching depth can reach the precision of 5nm-10nm by adjusting the etching rate, so that the size of a processed structure can be accurately controlled;
(2) by adopting the method of combining increasing the radio frequency power and the etching gas flow, the processing efficiency can be obviously improved;
(3) the precise processing aiming at the nano-scale glass device and the micron-scale glass device is realized by optimizing the problem of the combination process for different glass fine micro-nano structure sizes;
(4) by adopting the mode of combining the radio frequency bias power and the etching power for optimization, the vertical straightness of etching can be 90 +/-2 degrees, and the problems of low dry etching rate and poor verticality are solved.
(5) By adopting the process scheme of combining high verticality processing and high-speed etching, the processing of the glass structure with a large depth-to-width ratio can be realized.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a flow chart of a method for processing a fine micro-nano glass structure according to the invention;
fig. 2 is an SEM image of the micro-nano glass structure prepared in example 1; wherein A is a cross-sectional view and a transverse dimension mark of the etched glass structure; b is the angle of the side wall of the etched glass structure is 86.8 degrees;
FIG. 3 is an SEM image of a micro-glass structure prepared using comparative example 1, having an etched sidewall angle of 84.2;
FIG. 4 is a microglass structure prepared using comparative example 4; wherein A is a cross-sectional view and a transverse dimension mark of the etched glass structure; and B is the angle of the side wall of the etched glass structure is 109.4 degrees.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
FIG. 1 is a flow chart of a method for processing a fine micro-nano glass structure.
The following examples and comparative examples were carried out according to the respective specific procedures described below, and were subsequently used for the following performance tests.
Etching rate: the etch rate is obtained by measuring the etch depth divided by the etch time.
Etching verticality: and observing the section condition of the etched structure through SEM, and measuring the angle between the side wall of the etched section and the horizontal plane.
Roughness: and performing measurement characterization on the surface roughness or the side wall roughness by measurement of SEM, AFM or a step profiler.
Example 1
The embodiment 1 relates to a method for preparing a micro-nano glass structure for fine processing, wherein the minimum size of a structure to be processed is 2 micrometers, and the method for preparing the micro-nano glass structure comprises the following steps:
cleaning a 4inch quartz substrate with the thickness of 1 mm; depositing a Cr film with the thickness of 130 nm; coating photoresist on the Cr film, and photoetching by using an ultraviolet exposure mode to form a grid structure; etching the Cr film and the quartz substrate by using an inductive coupling reactive ion etching technology; the technological parameters for etching the Cr film are etching power of 400W and bias radio frequency power of 40W; the gas and flow rate was 55sccm of chlorine gas at a pressure of 10 mTorr. The technological parameters for etching the quartz substrate are that the etching power is 1400W, and the bias radio frequency power is 400W; the etching temperature is 58 ℃; the gas and flow rate of Ar (assist gas) 35sccm, CHF3110sccm at a pressure of 45 mTorr;
and removing the photoresist and the mask material by using an acetone ultrasonic cleaning method.
Fig. 2 is an SEM image of the micro-nano glass structure prepared in example 1; wherein A is a cross-sectional view and a transverse dimension mark of the etched glass structure; and B is the angle of the side wall of the etched glass structure is 86.8 degrees.
By adopting the preparation method of the embodiment, the glass etching efficiency is 700 +/-10 nm/min, and the etching verticality is 87 +/-3 degrees; roughness <40 nm.
Example 2
The embodiment 2 relates to a preparation method for finely processing a micro-nano glass structure, wherein the minimum size of a structure to be processed is 200nm, and the preparation method for the micro-nano glass structure comprises the following steps:
preparing quartz glass with the substrate thickness of 600um, and performing inorganic standard cleaning on the quartz glass to be processed; coating a photoresist with the thickness of 400nm on the surface of the glass; transferring the processed structure to a photoresist on the surface of a substrate by adopting an electron beam direct writing exposure mode; etching quartz glass by inductively coupled reactive ion etching (ICP) with etching power of 1200W and biasRF power 200W, Ar (assist gas) 35sccm, CHF3110sccm at a pressure of 35 mTorr; the etching temperature was 50 ℃.
And removing the photoresist by using an acetone ultrasonic cleaning method.
By adopting the preparation method of the embodiment 2, the glass etching efficiency is 450nm/min, the etching verticality is 88 +/-3 degrees, and the roughness is less than 30 nm.
Example 3:
this example is substantially the same as example 1 except that: etching the Cr film and the quartz substrate by using an inductive coupling reactive ion etching technology; the technological parameters for etching the quartz substrate are that the etching power is 800W, and the bias radio frequency power is 500W; the etching temperature is 60 ℃, and the gas for etching the quartz substrate and the flow rate are Ar (auxiliary gas) 35sccm and CHF3200sccm, gas pressure 120 mTorr; the gas for etching the Cr film and the flow rate of the gas for etching the Cr film were 55sccm of chlorine gas, and the gas pressure was 10 mTorr.
By adopting the preparation method of the embodiment, the glass etching efficiency is 350nm/min, and the etching verticality is 91 degrees; roughness <50 nm.
Comparative example 1
The comparative example 1 relates to a preparation method for finely processing a micro-nano glass structure, wherein the minimum size of a structure to be processed is 2 microns, and the preparation method for the micro-nano glass structure comprises the following steps:
cleaning a 4inch quartz substrate with the thickness of 1 mm; depositing a Cr film with the thickness of 130 nm; coating photoresist on the Cr film, and making a grid structure by utilizing ultraviolet lithography; etching the Cr film and the quartz substrate by using an inductive coupling reactive ion etching technology; the technological parameters for etching the Cr film are etching power of 400W and bias radio frequency power of 40W; the gas and flow rate is chlorine gas 55sccm, and the gas pressure is 10 mTorr; the technological parameters for etching the quartz substrate are 1400W of etching power, 80W of bias radio frequency power and 58 ℃ of etching temperature; the gas for etching the quartz substrate and the flow rate of Ar (assist gas) 35sccm, CHF3110sccm at a pressure of 45 mTorr.
Fig. 3 is an SEM image of a micro glass structure prepared using comparative example 1, with an etched sidewall angle of 84.2 °.
The preparation method of comparative example 1 was adopted, the etching efficiency was 458nm/min, and the etching perpendicularity was 84.2 °; roughness >200 nm.
Comparative example 2
The comparative example 2 relates to a preparation method for finely processing a micro-nano glass structure, wherein the minimum size of a structure to be processed is 200nm, and the preparation method of the micro-nano glass structure comprises the following steps:
preparing quartz glass with the substrate thickness of 600um, and performing inorganic standard cleaning on the quartz glass to be processed; coating a photoresist with the thickness of 400nm on the surface of the glass; transferring the processed structure to a photoresist on the surface of a substrate by adopting an electron beam direct writing exposure mode; etching quartz glass by inductively coupled reactive ion etching (ICP) with parameters of 1200W etching power, 150W bias radio frequency power, 35sccm Ar (auxiliary gas) and CHF3110sccm at a pressure of 35 mTorr; the etching temperature was 50 ℃.
The preparation process of comparative example 2 was used, the etching efficiency was 550nm/min, the etching verticality was 110 °, and the roughness was >300 nm.
Comparative example 3：
The present comparative example differs from example 1 only in that: the bias rf power is 600W.
By adopting the preparation method of the comparative example, the etching efficiency is 250nm/min, and the etching verticality is 97 degrees; the roughness is 200 nm.
Comparative example 4：
The present comparative example differs from example 1 only in that: CHF3 250sccm。
By adopting the preparation method of the comparative example, the etching efficiency is 270nm/min, and the etching verticality is 109.4 degrees; the roughness is 270 nm.
FIG. 4 is a microglass structure prepared using comparative example 4; wherein A is a cross-sectional view and a transverse dimension mark of the etched glass structure; and B is the angle of the side wall of the etched glass structure is 109.4 degrees.
According to the invention, through optimizing process combination, selecting a proper mask film and screening processing parameters, and adjusting parameters such as etching gas flow, combination ratio, radio frequency source power, bias voltage, etching temperature and the like, the glass etching speed reaches 710nm/min on the premise of ensuring to obtain better side wall verticality and shape roughness. Compared with the prior common process, the etching rate is improved by nearly two times, the roughness is reduced to below 40nm from the prior 200nm-300nm, and the verticality of the side wall is improved to nearly 90 degrees from 70 degrees. The preparation method of the invention is believed to be widely applied to the processing of glass devices in the fields of optical communication, radio frequency, micro-electro-mechanical systems, micro-fluidic chips, microwaves and three-dimensional integration.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.
Claims (10)
1. A processing method of a fine micro-nano glass structure is characterized by comprising the following steps:
s1: preparing a glass substrate, and cleaning and blow-drying the glass substrate;
s2: selecting a mask material, and performing S3 when the mask material is a non-photoresist material; when the mask material is a photoresist material, performing S4;
s3: depositing a mask film on a glass substrate, and coating a photoresist;
s4: coating photoresist on a glass substrate;
s5: transferring a structure to be processed to the photoresist on the surface of the substrate by adopting a photoetching mode;
s6: according to the mask material, when the mask material is a non-photoresist material, etching the mask material, and then etching the glass substrate; when the mask material is a photoresist material, only the glass substrate is etched;
s7: and removing the mask material by using a dry etching or wet etching method to form a final glass device structure.
2. The processing method of fine micro-nano glass structure according to claim 1, wherein the material of the glass substrate in step S1 is selected from quartz glass or borosilicate glass, and the thickness of the substrate is 100 μm-2 mm.
3. The method for processing a fine micro-nano glass structure according to claim 1, wherein the non-photoresist material in step S2 comprises one or more of aluminum, chromium, gold, titanium, amorphous silicon, and polysilicon thin film.
4. The processing method of the fine micro-nano glass structure according to claim 1 or 3, wherein the thickness of the mask material in step S2 is the product of the etching selectivity of the mask and the glass and the etching depth of the glass.
5. The method for processing a fine micro-nano glass structure according to claim 1, wherein the mask film deposition in step S3 is sputtering, chemical vapor deposition or electron beam evaporation deposition.
6. The processing method of the fine micro-nano glass structure according to claim 1, wherein the photolithography in step S5 is as follows: when the minimum size of the structure to be processed is 8nm-1 μm, selecting a method of electron beam direct writing exposure, laser direct writing or step-by-step photoetching; when the minimum size of the structure to be processed is 1-100 μm, the ultraviolet exposure mode is selected.
7. The processing method of the fine micro-nano glass structure according to claim 1, wherein the etching manner in the step S6 is as follows: when the minimum size of the structure to be processed is less than 10 microns, the ion beam etching or the inductively coupled reactive ion technology is selected for etching, and when the minimum size of the structure to be processed is 10 microns-100 microns, the wet etching, the ion beam etching or the inductively coupled reactive ion technology is selected for etching.
8. According to claim 1 or7, the processing method of the fine micro-nano glass structure is characterized in that when an inductively coupled reactive ion technology is selected for etching a glass substrate, CHF is adopted as fluorine-based gas of the inductively coupled reactive ions3、C2F6、C4F8Or CF4。
9. The fine micro-nano glass structure processing method according to claim 7, wherein the pressure of the glass substrate etched by the inductively coupled reactive ion is 35 mTorr-120 mTorr, and the gas flow is 35sccm-200 sccm; the etching power is 100W-1400W.
10. The fine micro-nano glass structure processing method according to claim 7, wherein the bias radio frequency power of the inductively coupled reactive ion etching glass substrate is 200W-500W, and the etching temperature is 40 ℃ to 60 ℃.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116040955A (en) * | 2023-02-07 | 2023-05-02 | 浙江大学 | Fused quartz surface micro-nano structure processing method for calibration of detection system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587296A (en) * | 2009-06-18 | 2009-11-25 | 上海交通大学 | Surface plasma nano photolithography |
| CN102275866A (en) * | 2011-07-11 | 2011-12-14 | 西安交通大学 | Manufacturing process of microfluid channel with heating function |
| CN102590944A (en) * | 2012-03-31 | 2012-07-18 | 上海光芯集成光学股份有限公司 | Mask technology for glass substrate for ion exchange |
| CN103121659A (en) * | 2013-01-15 | 2013-05-29 | 西北工业大学 | Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique |
| CN103943716A (en) * | 2013-01-17 | 2014-07-23 | 上海交通大学 | Micro nano structure solar battery and preparation method of back light trapping structure thereof |
| CN108132579A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | Photo mask board |
| CN110902647A (en) * | 2019-12-05 | 2020-03-24 | 深圳先进技术研究院 | Method for manufacturing nano channel with gradually changed size |
| CN111606300A (en) * | 2020-05-26 | 2020-09-01 | 杭州欧光芯科技有限公司 | Method for manufacturing high aspect ratio nano grating |
-
2021
- 2021-08-31 CN CN202111014187.7A patent/CN113788452A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587296A (en) * | 2009-06-18 | 2009-11-25 | 上海交通大学 | Surface plasma nano photolithography |
| CN102275866A (en) * | 2011-07-11 | 2011-12-14 | 西安交通大学 | Manufacturing process of microfluid channel with heating function |
| CN102590944A (en) * | 2012-03-31 | 2012-07-18 | 上海光芯集成光学股份有限公司 | Mask technology for glass substrate for ion exchange |
| CN103121659A (en) * | 2013-01-15 | 2013-05-29 | 西北工业大学 | Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique |
| CN103943716A (en) * | 2013-01-17 | 2014-07-23 | 上海交通大学 | Micro nano structure solar battery and preparation method of back light trapping structure thereof |
| CN108132579A (en) * | 2016-12-01 | 2018-06-08 | 清华大学 | Photo mask board |
| CN110902647A (en) * | 2019-12-05 | 2020-03-24 | 深圳先进技术研究院 | Method for manufacturing nano channel with gradually changed size |
| CN111606300A (en) * | 2020-05-26 | 2020-09-01 | 杭州欧光芯科技有限公司 | Method for manufacturing high aspect ratio nano grating |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116040955A (en) * | 2023-02-07 | 2023-05-02 | 浙江大学 | Fused quartz surface micro-nano structure processing method for calibration of detection system |
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