CN102153046A - Method for preparing semicylindrical superfine slot by combining twice membranous layer deposition, dry etching and wet etching - Google Patents
Method for preparing semicylindrical superfine slot by combining twice membranous layer deposition, dry etching and wet etching Download PDFInfo
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- CN102153046A CN102153046A CN2010106177079A CN201010617707A CN102153046A CN 102153046 A CN102153046 A CN 102153046A CN 2010106177079 A CN2010106177079 A CN 2010106177079A CN 201010617707 A CN201010617707 A CN 201010617707A CN 102153046 A CN102153046 A CN 102153046A
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Abstract
The invention provides a method for preparing a semicylindrical superfine slot by combining twice membranous layer deposition, dry etching and wet etching. The method comprises the following principal steps of: preparing a sheltering membranous layer having a nano slit on a quartz substrate; and through the slit, performing isotropic etching on the quartz substrate by using hydrofluoric acid buffer solution so as to obtain the semicylindrical superfine slot. By the method, the slit with the width of 100 to 500 nanometers can be formed without expensive equipment such as electronic beams, ion beams and the like, and the semicylindrical superfine slot with the with of 500 nanometers to 2.5 microns and the depth of 250 nanometers to 1.25 microns can be prepared by controlling the conditions of wet etching.
Description
Technical field
The present invention relates to a kind of preparation method of hydrofluoric acid buffer solution, relate in particular to a kind of rete deposition of utilizing twice, dry etching and wet etching prepare the method for hydrofluoric acid buffer solution.
Technical background
The micro-nano element is the micronano optical element especially, all has huge application potential in scientific research, military affairs, field such as civilian.Hydrofluoric acid buffer solution is the basis of the micronano optical element of some labyrinths of preparation.The preparation of micron and sub-micron hydrofluoric acid buffer solution is the difficult point of research.Hydrofluoric acid buffer solution has broad application prospects, and for example, is applied to aspects such as super-resolution imaging, SPP nano-photoetching.
Preparation method's one class of half-cylindrical groove is a gray scale exposure etching, utilizes the difference of zones of different photoresist exposure dose to make the structure graph of exposure area reach desired shape, by dry etching figure is transferred on the substrate again.As gray scale mask photoetching, mobile mask lithography etc., these methods are fit to the half-cylindrical groove structure of processing diameter more than 3 microns, and its shortcoming is to be difficult to prepare the more structure of small-feature-size.It is hundred nano-scale that some SPP devices need the diameter of hydrofluoric acid buffer solution structure.Though straight write device such as electron beam, ion beam can prepare the figure of this size, expense costliness and working (finishing) area only have micron dimension, are difficult to satisfy the needs of practical application.This method only need be used conventional film deposition techniques, photoetching technique, dry etching technology and wet etching technology, just can prepare that to have width be 100 nanometers to the mask membrane layer of 500 nano-scale narrow slit structures and diameter width scope is 500 nanometers to 2.5 micron, depth bounds be 250 nanometers to 1.25 micron hydrofluoric acid buffer solution.Be more or less the same on the half-cylindrical groove structure size that film deposition techniques, photoetching technique, the wet etching technology of half-cylindrical groove that this method prepares and only use routine prepares, but slot wedge is smooth, smooth a lot.
Summary of the invention
The technical problem to be solved in the present invention is: at the restriction part of existing microfabrication making, a kind of rete deposition of utilizing twice is proposed, dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, this method only need adopt conventional film deposition techniques, photoetching technique, dry etching technology and wet etching technology, just can prepare the diameter width scope and be 500 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 250 nanometers to 1.25 micron.
The technical solution adopted for the present invention to solve the technical problems is: a kind of rete deposition of utilizing twice, and dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, and as shown in Figure 1, step is as follows:
(1) adopts magnetron sputtering technique or evaporation coating technique depositional coating on quartz substrate, on described rete, be coated with photoresist; The thickness of quartz substrate is 200～2000 microns, and the thickness of rete is 20～300 nanometers, and the thickness of photoresist is 100～2000 nanometers;
(2) adopting photoetching technique is more than 20 microns at manufacturing cycle on the photoresist, and width is 10 microns and above graphic structure;
(3) utilize the photoresist figure of described step (2) preparation to shelter, the dry etching anisotropy, the isotropic characteristics of wet etching, utilize dry etching to fall not have photoresist to make the rete of sheltering earlier, re-use the rete that the corrosive liquid sideetching falls photoresist pattern edge below, form the air gap of width in 100～500 nanometers;
(4) body structure surface that obtains after described step (3) deposits the rete of same material once more, obtains the slit corresponding to air gap width behind the removal photoresist;
(5) with the rete of described step (1) and described step (4) deposition for sheltering, pass through slit, with substrate etching solution substrate is carried out isotropic etch, obtain the diameter width scope and be 500 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 250 nanometers to 1.25 micron.
Rete in the described step (1) is metal, silicon or organic film, and this rete will play masking action in the quartzy technology of follow-up wet etching.
In the described step (3), the used instrument of dry etching is IBE, and etch period is 3～10 minutes, and corrosive liquid is the liquid that dechromises, and temperature is 20～30 ℃, and the time of wet etching chromium layer is 1～6 minute.
In the described step (5) substrate is carried out wet etching the time need constantly to stir substrate etching solution.Described corrosive liquid is a buffered hydrofluoric acid solution, and temperature is 20～30 ℃, and the time of wet etching quartz substrate is 6～35 minutes.
In the described step (5), the present invention's advantage compared with prior art is: the present invention only need adopt conventional film deposition techniques, photoetching technique, dry etching and wet etching technology, just can prepare the diameter width scope and be 500 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 250 nanometers to 1.25 micron; Only adopt conventional film deposition techniques, photoetching technique, dry etching and wet etching technology, can greatly reduce the preparation cost of hydrofluoric acid buffer solution; But the processing of the present invention's large tracts of land, the distribution area maximum of the half-cylindrical groove micro-structural of preparation can reach square centimeters up to a hundred; For the processing of micro-nano components and parts provide a kind of accurately, novel, convenient, process approach efficiently.
Description of drawings
Fig. 1 is the flow chart of the inventive method;
Fig. 2 is in the embodiment of the invention 1, the cross-sectional view behind quartz substrate surface chromium plating film and coating photoresist;
Fig. 3 is in the embodiment of the invention 1, adopts the cross-sectional view of the wide bargraphs of conventional lithographic equipment making;
Fig. 4 is in the embodiment of the invention 1, adopts dry etching not by the cross-sectional view behind the chromium film of photoresist masking;
Fig. 5 is in the embodiment of the invention 1, uses the liquid sideetching that dechromises to fall the cross-sectional view of the microstructure graph that obtains behind the chromium rete of photoresist pattern edge below;
Fig. 6 is in the embodiment of the invention 1, is depositing the cross-sectional view that obtains behind the chromium layer on the structure shown in Figure 5 for the second time;
Fig. 7 is in the embodiment of the invention 1, adopts LIFT OFF technology to remove the cross-sectional view that obtains behind the photomask surface glue;
Fig. 8 is in the embodiment of the invention 1, places buffered hydrofluoric acid solution to carry out the cross-sectional view of the hydrofluoric acid buffer solution that isotropic etch obtains the structure among Fig. 7;
Fig. 9 is in the embodiment of the invention 1, removes the chromium film, the cross-sectional view of the hydrofluoric acid buffer solution that obtains.
Among the figure: 1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
Right figure is a hydrofluoric acid buffer solution of utilizing the present invention to prepare among Figure 10.Left figure utilizes twice rete deposition, wet etching, the hydrofluoric acid buffer solution that does not adopt the method for dry etching to prepare.Linear among the figure in the groove is to utilize the mask graph of FIB etching.
The specific embodiment
Introduce the present invention in detail below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and promptly can realize the full content of claim of the present invention to the technical staff in field by following examples.
(1) selecting thickness is that 360 microns quartz plate is as substrate; Adopt the metallic chromium layer of magnetron sputtering technique in substrate surface deposition one deck 100 nanometer thickness, coating thickness is 1.1 microns an AR-P3100 photoresist on the chromium film, and as shown in Figure 2,1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(2) by exposure, development, hard mould, the cycle of preparing is 30 microns on photoresist, and live width is 10 microns a linear, and as shown in Figure 3,1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(3) utilize the photoresist figure to shelter, the isotropic characteristics of dry anisotropic and wet etching utilize the IBE dry etching to fall not by 100 nanometer thickness metallic chromium layers of photoresist masking earlier, and etch period is about 4 minutes, as shown in Figure 4.Use corrosive liquid to etch away the metallic chromium layer of photoresist lines pattern edge below.Corrosive liquid is the liquid that dechromises, and corrosion temperature is 23 ℃, and the time of wet etching chromium layer is about 2 minutes, and the width of the air gap that obtains is 150 nanometers, as shown in Figure 5.1 represents the backing material quartz among Fig. 4,5; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(4) body structure surface behind dry etching and wet etching deposits the chromium film once more, as shown in Figure 6.Remove the chromium film that is attached in photoresist and the chromium plating for the second time on the photoresist, obtain the chromium film slit with the air gap same widths 150 nanometers, as shown in Figure 7.1 represents the backing material quartz among Fig. 6; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100, and 1 represents the backing material quartz among Fig. 7; 2 represent the chromium membrane material.
(5) by chromium film slit, with buffered hydrofluoric acid solution substrate is carried out isotropic etch, temperature is 23 ℃, and the time of wet etching quartz is 7 minutes, as shown in Figure 8.Spend chrome liquor and remove residual mask membrane layer, obtaining diameter is 700 nanometers, and the degree of depth is the hydrofluoric acid buffer solution of 350 nanometers, as shown in Figure 9.1 represents the backing material quartz among Fig. 8; 2 represent the chromium membrane material.1 represents the backing material quartz among Fig. 9.
(1) selecting thickness is that 1000 microns quartz plate is as substrate; Adopt the metallic chromium layer of magnetron sputtering technique in substrate surface deposition one deck 150 nanometer thickness, coating thickness is 1.1 microns an AR-P3100 photoresist on the chromium film, and as shown in Figure 2,1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(2) by exposure, development, hard mould, the cycle of preparing is 30 microns on photoresist, and live width is 10 microns a linear, and as shown in Figure 3,1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(3) utilize the photoresist figure to shelter, the isotropic characteristics of dry anisotropic and wet etching utilize the IBE dry etching to fall not by 150 nanometer thickness metallic chromium layers of photoresist masking earlier, and etch period is about 5 minutes and 30 seconds, as shown in Figure 4.Use corrosive liquid to etch away the metallic chromium layer of photoresist lines pattern edge below.Corrosive liquid is the liquid that dechromises, and corrosion temperature is 23 ℃, and the time of wet etching chromium layer is about 3 minutes and 30 seconds, and the width of the air gap that obtains is 250 nanometers, as shown in Figure 5.1 represents the backing material quartz among Fig. 4,5; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(4) body structure surface behind dry etching and wet etching deposits the chromium film once more, as shown in Figure 6.Remove the chromium film that is attached in photoresist and the chromium plating for the second time on the photoresist, obtain the chromium film slit with the air gap same widths 250 nanometers, as shown in Figure 7.1 represents the backing material quartz among Fig. 6; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100, and 1 represents the backing material quartz among Fig. 7; 2 represent the chromium membrane material.
(5) by slit, with buffered hydrofluoric acid solution substrate is carried out isotropic etch, temperature is 23 ℃, and the time of wet etching quartz is about 10 minutes and 30 seconds, as shown in Figure 8.Spend chrome liquor and remove residual mask membrane layer, obtaining diameter width is 1 micron, and the degree of depth is the hydrofluoric acid buffer solution of 500 nanometers, as shown in Figure 9.1 represents the backing material quartz among Fig. 8; 2 represent the chromium membrane material.1 represents the backing material quartz among Fig. 9.
Right figure among Figure 10 is that the diameter width by the preparation of the technology of embodiment 2 is about 1 micron, and the degree of depth is about the scanning electron microscope image of the half-cylindrical groove of 500 nanometers.Left figure utilizes twice rete deposition, wet etching, the hydrofluoric acid buffer solution that does not adopt the method for dry etching to prepare.Linear among the figure in the groove is to utilize the mask graph of FIB etching.
(1) selecting thickness is that 1000 microns quartz plate is as substrate; Adopt the metallic chromium layer of magnetron sputtering technique in substrate surface deposition one deck 200 nanometer thickness, coating thickness is 1.1 microns an AR-P3100 photoresist on the chromium film, and as shown in Figure 2,1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(2) by exposure, development, hard mould, the cycle of preparing is 30 microns on photoresist, and live width is 10 microns a linear, and as shown in Figure 3,1 represents the backing material quartz; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(3) utilize the photoresist figure to shelter, the isotropic characteristics of dry anisotropic and wet etching utilize the IBE dry etching to fall not by 200 nanometer thickness metallic chromium layers of photoresist masking earlier, and etch period is about 8 fens, as shown in Figure 4.Use corrosive liquid to etch away the metallic chromium layer of photoresist lines pattern edge below.Corrosive liquid is the liquid that dechromises, and corrosion temperature is 23 ℃, and the time of wet etching chromium layer is 5 minutes and 30 seconds, and the width of the air gap that obtains is 400 nanometers, as shown in Figure 5.1 represents the backing material quartz among Fig. 4,5; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.
(4) body structure surface behind dry etching and wet etching deposits the chromium film once more, as shown in Figure 6.Remove the chromium film that is attached in photoresist and the chromium plating for the second time on the photoresist, obtain the slit with the air gap same widths 400 nanometers, as shown in Figure 7.1 represents the backing material quartz among Fig. 6; 2 represent the chromium membrane material; 3 represent photoresist AR-P3100.1 represents the backing material quartz among Fig. 7; 2 represent the chromium membrane material.
(5) by slit, with buffered hydrofluoric acid solution substrate is carried out isotropic etch, temperature is 23 ℃, and the time of wet etching quartz is 30 minutes, as shown in Figure 8.Spend chrome liquor and remove residual mask membrane layer, obtaining diameter width is 2 microns, and the degree of depth is 1 micron a hydrofluoric acid buffer solution, as shown in Figure 9.1 represents the backing material quartz among Fig. 8; 2 represent the chromium membrane material.1 represents the backing material quartz among Fig. 9.
Claims (5)
1. one kind is utilized the rete deposition twice, and dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, and its characterization step is as follows:
(1) adopt magnetron sputtering technique or evaporation coating technique depositional coating on quartz substrate, be coated with photoresist on described rete, the thickness of quartz substrate is 200～2000 microns, and the thickness of rete is 20～300 nanometers, and the thickness of photoresist is 100～2000 nanometers;
(2) adopting photoetching technique is more than 20 microns at manufacturing cycle on the photoresist, and width is 10 microns and above graphic structure;
(3) the photoresist figure that utilizes described step (2) to make is sheltered, the dry etching anisotropy, the isotropic characteristics of wet etching, utilize dry etching to fall earlier not by the rete of photoresist masking, re-use the rete that the corrosive liquid sideetching falls photoresist pattern edge below, form the air gap of width in 100～500 nanometers;
(4) body structure surface that obtains after described step (3) deposits the rete of same material once more, obtains the rete slit corresponding to air gap width behind the removal photoresist;
(5) with the rete of described step (1) and described step (4) deposition for sheltering, by the rete slit, with substrate etching liquid substrate is carried out isotropic etch, obtain the diameter width scope and be 500 nanometers to 2.5 micron, depth bounds is the hydrofluoric acid buffer solution of 250 nanometers to 1.25 micron.
2. a kind of rete deposition of utilizing twice according to claim 1, dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, it is characterized in that: the rete in the described step (1) is metal, silicon or organic film, and this rete will play masking action in the quartzy technology of follow-up wet etching.
3. a kind of rete deposition of utilizing twice according to claim 1, dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, it is characterized in that: in the described step (3), the used instrument of dry etching is IBE, etch period is 3～10 minutes, corrosive liquid is the liquid that dechromises, and temperature is 20～30 ℃, and the time of wet etching chromium layer is 1～6 minute.
4. a kind of twice rete deposition of utilizing according to claim 1, dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, it is characterized in that: in the described step (5) substrate is carried out wet etching the time need constantly to stir substrate etching liquid.
5. a kind of rete deposition of utilizing twice according to claim 1, dry etching and wet etching prepare the method for hydrofluoric acid buffer solution, it is characterized in that: in the described step (5), described corrosive liquid is a buffered hydrofluoric acid solution, temperature is 20～30 ℃, and the time of wet etching quartz substrate is 6～35 minutes.
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| CN102938436A (en) * | 2012-11-20 | 2013-02-20 | 无锡华润华晶微电子有限公司 | Isolation filling manufacture method in GaN-based high voltage light-emitting diode (LED) manufacture process |
| CN103605260A (en) * | 2013-12-02 | 2014-02-26 | 中国科学院微电子研究所 | Preparation method for nanoscale EUV mask |
| CN106754247A (en) * | 2016-12-12 | 2017-05-31 | 中国科学院微电子研究所 | A kind of pallet and its processing technology |
| CN114272965A (en) * | 2021-12-27 | 2022-04-05 | 广东省科学院半导体研究所 | Preparation method of glass substrate chip, glass substrate chip and application |
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Application publication date: 20110817 |