CN101722158B - 一种用于槽式清洗机的补液方法 - Google Patents
一种用于槽式清洗机的补液方法 Download PDFInfo
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- CN101722158B CN101722158B CN 200910241460 CN200910241460A CN101722158B CN 101722158 B CN101722158 B CN 101722158B CN 200910241460 CN200910241460 CN 200910241460 CN 200910241460 A CN200910241460 A CN 200910241460A CN 101722158 B CN101722158 B CN 101722158B
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- chemical
- cleaning
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- 239000007788 liquid Substances 0.000 title claims abstract description 65
- 238000004140 cleaning Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000126 substance Substances 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000012530 fluid Substances 0.000 claims description 40
- 239000000203 mixture Substances 0.000 claims description 5
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000001802 infusion Methods 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
颗粒平均值(个/片) | 颗粒最大值(个/片) | 颗粒最小值(个/片) | NH4OH消耗量(L) | H2O2消耗量(L) | |
传统补液方式 | 4.5 | 15 | 2 | 13.8 | 27.7 |
本发明补液方式 | 3.6 | 8 | 0 | 11 | 22 |
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910241460 CN101722158B (zh) | 2009-12-03 | 2009-12-03 | 一种用于槽式清洗机的补液方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910241460 CN101722158B (zh) | 2009-12-03 | 2009-12-03 | 一种用于槽式清洗机的补液方法 |
Publications (2)
Publication Number | Publication Date |
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CN101722158A CN101722158A (zh) | 2010-06-09 |
CN101722158B true CN101722158B (zh) | 2011-09-07 |
Family
ID=42444049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 200910241460 Active CN101722158B (zh) | 2009-12-03 | 2009-12-03 | 一种用于槽式清洗机的补液方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101722158B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11848239B2 (en) * | 2020-07-10 | 2023-12-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning method and structures resulting therefrom |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102172582A (zh) * | 2010-12-29 | 2011-09-07 | 常州亿晶光电科技有限公司 | 流量式精准自动补液装置 |
CN102251242A (zh) * | 2011-07-05 | 2011-11-23 | 国电宁夏太阳能有限公司 | 多晶硅清洗方法 |
CN105632895B (zh) * | 2016-01-04 | 2018-08-10 | 北京七星华创电子股份有限公司 | 一种减少化学清洗工艺中球形颗粒缺陷的方法 |
US11335550B2 (en) * | 2017-09-08 | 2022-05-17 | Acm Research (Shanghai) Inc. | Method and apparatus for cleaning semiconductor wafer |
CN110369367A (zh) * | 2019-08-01 | 2019-10-25 | 山东泰开高压开关有限公司 | 降低废液量的方法及装置 |
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2009
- 2009-12-03 CN CN 200910241460 patent/CN101722158B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11848239B2 (en) * | 2020-07-10 | 2023-12-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning method and structures resulting therefrom |
Also Published As
Publication number | Publication date |
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CN101722158A (zh) | 2010-06-09 |
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Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150612 |
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Effective date of registration: 20150612 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |