CN101719504A - 用于光电单片集成的硅基光电探测器及其制备方法 - Google Patents
用于光电单片集成的硅基光电探测器及其制备方法 Download PDFInfo
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- CN101719504A CN101719504A CN200910112909A CN200910112909A CN101719504A CN 101719504 A CN101719504 A CN 101719504A CN 200910112909 A CN200910112909 A CN 200910112909A CN 200910112909 A CN200910112909 A CN 200910112909A CN 101719504 A CN101719504 A CN 101719504A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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CN2009101129095A CN101719504B (zh) | 2009-12-03 | 2009-12-03 | 用于光电单片集成的硅基光电探测器及其制备方法 |
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CN2009101129095A CN101719504B (zh) | 2009-12-03 | 2009-12-03 | 用于光电单片集成的硅基光电探测器及其制备方法 |
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CN101719504A true CN101719504A (zh) | 2010-06-02 |
CN101719504B CN101719504B (zh) | 2011-10-12 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103872168A (zh) * | 2014-03-06 | 2014-06-18 | 中国电子科技集团公司第三十八研究所 | 用于硅基光电集成电路芯片中的光电探测器及制备方法 |
CN105742405A (zh) * | 2014-12-23 | 2016-07-06 | 国际商业机器公司 | 硅光子集成方法和结构 |
CN106225783A (zh) * | 2016-08-18 | 2016-12-14 | 厦门中莘光电科技有限公司 | 用于轨迹探测的四象限硅基光电探测器 |
CN110085679A (zh) * | 2019-05-09 | 2019-08-02 | 吉林大学 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
CN110246903A (zh) * | 2019-06-28 | 2019-09-17 | 湖南师范大学 | 低噪声宽光谱响应的单光子雪崩光电二极管及其制作方法 |
CN114745057A (zh) * | 2022-04-11 | 2022-07-12 | 上海交通大学 | 通用型硅基集成光学频率传递芯片 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051857A (en) * | 1998-01-07 | 2000-04-18 | Innovision, Inc. | Solid-state imaging device and method of detecting optical signals using the same |
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2009
- 2009-12-03 CN CN2009101129095A patent/CN101719504B/zh active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103872168A (zh) * | 2014-03-06 | 2014-06-18 | 中国电子科技集团公司第三十八研究所 | 用于硅基光电集成电路芯片中的光电探测器及制备方法 |
CN105742405A (zh) * | 2014-12-23 | 2016-07-06 | 国际商业机器公司 | 硅光子集成方法和结构 |
US9755087B2 (en) | 2014-12-23 | 2017-09-05 | International Business Machines Corporation | Silicon photonics integration method and structure |
US10026852B2 (en) | 2014-12-23 | 2018-07-17 | International Business Machines Corporation | Silicon photonics integration method and structure |
CN105742405B (zh) * | 2014-12-23 | 2018-08-24 | 国际商业机器公司 | 硅光子集成方法和结构 |
US10546962B2 (en) | 2014-12-23 | 2020-01-28 | International Business Machines Corporation | Silicon photonics integration method and structure |
US11164980B2 (en) | 2014-12-23 | 2021-11-02 | International Business Machines Corporation | Silicon photonics integration method and structure |
CN106225783A (zh) * | 2016-08-18 | 2016-12-14 | 厦门中莘光电科技有限公司 | 用于轨迹探测的四象限硅基光电探测器 |
CN110085679A (zh) * | 2019-05-09 | 2019-08-02 | 吉林大学 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
CN110246903A (zh) * | 2019-06-28 | 2019-09-17 | 湖南师范大学 | 低噪声宽光谱响应的单光子雪崩光电二极管及其制作方法 |
CN110246903B (zh) * | 2019-06-28 | 2021-05-28 | 湖南师范大学 | 低噪声宽光谱响应的单光子雪崩光电二极管及其制作方法 |
CN114745057A (zh) * | 2022-04-11 | 2022-07-12 | 上海交通大学 | 通用型硅基集成光学频率传递芯片 |
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CN101719504B (zh) | 2011-10-12 |
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