CN101718587B - Non-cooling type ultrared micrometering kampometer - Google Patents

Non-cooling type ultrared micrometering kampometer Download PDF

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CN101718587B
CN101718587B CN2009102503926A CN200910250392A CN101718587B CN 101718587 B CN101718587 B CN 101718587B CN 2009102503926 A CN2009102503926 A CN 2009102503926A CN 200910250392 A CN200910250392 A CN 200910250392A CN 101718587 B CN101718587 B CN 101718587B
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bridge floor
brachium pontis
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CN101718587A (en
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方辉
郭俊
雷述宇
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NORTH GUANGWEI TECHNOLOGY INC.
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BEIJING GUANGWEIJI ELECTRICITY TECHNOLOGIES Co Ltd
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Abstract

The invention provides a non-cooling type ultrared micrometering kampometer comprising a substrate base, a sheet bright surface and two L-shaped bridge arms arranged at the opposite sides of the bright surface. One end part of either bridge arm is electrically connected with the bright surface; the other end part is connected with the base by an electric connecting column; a vacuum gap layer is formed between the bright surface and the substrate base the upper surface of which is provided with a reflecting layer; the bright surface sequentially comprises an absorption layer, a heat-sensitive layer and a passivating layer from bottom to top; each bridge arm sequentially comprises a thermal resistance layer and a conductance layer from bottom to top; and the absorption layer and the passivating layer of the bright surface have the similar thickness of 2800-3200 so that crushing stress generated by the absorption layer and tensile stress generated by the passivating layer are easier to balance; and the structure of the bright surface is extremely stable to avoid warping, deforming, fracturing or demolding. The invention greatly lowers the process difficulty.

Description

Non-cooling type ultrared micrometering kampometer
Technical field
The present invention relates to a kind of non-cooling type ultrared micrometering kampometer that is used for instruments such as non-refrigeration formula thermal imaging system, at the infrared radiation wavelength coverage be 8-14 μ m.
Background technology
Any object all can to around emittance.Infrared radiation refers to the electromagnetic radiation of wavelength in the 0.7-1000 mu m range.The electromagnetic radiation that other object that temperature is close in human body and the environment is launched, 38% concentration of energy are also referred to as heat radiation usually in wavelength is the 8-14 mu m range.The thermal-radiating detector that can survey this wave band is referred to as the infrared emanation sensor.With a plurality of infrared emanation sensors according to arranged in array mode on a chip, and when chip placed the focal plane of the lens that can focus on infrared emanation, then constitute infrared focus plane kampometer array (IRFPA), each kampometer that constitutes the kampometer array is called a pixel (pixel) of this array.With the produced kampometer of semiconductor microactuator process technology, the big I of single pixel is called the micrometering kampometer in the 25-50 mu m range.Infrared micrometering kampometer is the core parts of non-refrigeration formula thermal imaging system.
As Fig. 1-shown in Figure 4, the structure of traditional non-cooling type ultrared micrometering kampometer that is used for non-refrigeration formula thermal imaging system comprises: substrate base 10, sheet bridge floor 20 and be arranged on bridge floor 20 opposite sides and be positioned at two L shaped brachium pontis 30 on same plane with bridge floor 20.The end, one side and the bridge floor 20 of brachium pontis 30 link together, and realize being electrically connected with bridge floor 20, and the another side end is connected on the substrate 10 by being electrically connected post 40.Bridge floor 20 is unsettled above substrate base 10, is supported by two brachium pontis 30 and two electrical connection posts 40.
Substrate base 10 is generally silicon chip, and it contains the read output signal integrated circuit, and the preparation of the preparation technology of integrated circuit and micrometering kampometer is successively independently to carry out.Substrate base 10 upper surfaces are provided with one deck reflection horizon 11.Between the lower surface of bridge floor 20 and reflection horizon 11 upper surfaces, be formed with vacuum gap layer 50.
Bridge floor 20 comprises 3 layers, is absorption layer 21, heat-sensitive layer 22 and passivation layer 23 from bottom to up successively.
Brachium pontis 30 also is divided into 3 layers, is thermoresistance layer 31, conductance layer 32 and passivation layer 33 from the bottom to top successively.
Thermoresistance layer 31 on the brachium pontis 30 and the absorption layer on the bridge floor 20 21 are just divided into two zones artificially on function, but in fact they are with two zones that are connected in the thin film, also realize simultaneously on the technology.Make in the design that the thermal resistance value of thermoresistance layer 31 is bigger, run off slowly, take this to make the resistance variations that temperature rise caused of bridge floor enough big, can be recorded by the integrated circuit in the substrate 10 to guarantee the energy that absorption layer 21 is absorbed.The physical dimension design of bridge floor 20, brachium pontis 30 also will be satisfied bridge floor 20 simultaneously will reach stable temperature in the enough short time, so that read stable resistance.
In the bridge floor 20 in the used material of heat-sensitive layer 22 and the brachium pontis 30 conductance layer 32 used materials be different, therefore can not in same step process, realize.In order to make heat-sensitive layer 22 realize being electrically connected with conductance layer 32, brachium pontis 30 must be overlapping to some extent with bridge floor 20.As shown in Figure 4, brachium pontis 30 is L types, and its one side (seeing the dotted portion of Fig. 4) extend in the bridge floor 20, is electrically connected with it.
During use, infrared radiation vertical incidence and pass passivation layer 23 and heat-sensitive layer 22 above bridge floor 20 is absorbed part energy in absorption layer 21; Some infrared radiation passes the layer 11 that is reflected behind absorption layer 21, the vacuum gap layer 50 and reflects, and absorbed layer 21 absorbs once more.The temperature of absorption layer 21 rises because of absorbing infrared radiation, thereby causes the resistance variations of heat-sensitive layer 22.This resistance variations can read and be transferred in the integrated circuit in the substrate 10 and measure by the conductance layer 32 that is connected with heat-sensitive layer 22.
IRFPA has two important indicators, and the one, noise equivalent temperature difference (NETD), the 2nd, response time τ.
Noise equivalent temperature difference is defined as, and when the temperature change of testee was NETD, the output signal voltage change amount of kampometer just in time equaled noise voltage.Noise equivalent temperature difference indicates detector sensitivity.NETD is more little, and detector sensitivity is high more, so we wish that NETD is the smaller the better.
Response time, τ was defined as, the time constant that the absorption layer temperature rises.Usually the frame frequency of thermal imaging system display is 50Hz, and then the time of each frame demonstration is 20ms.The temperature of absorption layer can be settled out in the short like this time, and then its response time must be lower than 1/3 of 20ms, i.e. τ＜7ms.τ is more little, means that frame frequency can establish highly more, and then imaging turnover rate is more fast.The frame frequency of civilian thermal imaging system is generally 50-60Hz, and military then can be up to 100Hz.We wish that τ is the smaller the better.
Undoubtedly, these two indexs and several factors all have relation, such as the length of the selection of the size of pixel, material, lines and width, and the thickness of each layer film.The size of pixel often is exposed the restriction of equipment and array size, concerning thermal imaging system, basically all at 25 * 25-45 * 45 μ m 2The selection of material is also more limited, should have to measure necessary physical characteristics, its growth, etching and cleaning again with semiconductor technology device therefor compatibility.The length of pattern line and width also are exposed the restriction of equipment.In the design device, the particularly important is the thickness of various retes, wherein also comprise the vacuum gap layer thickness between absorption layer and the reflection horizon.Though the vacuum gap layer is a vacuum layer, in fact do not have any film, we will it be included in the rete.Why important the thickness of vacuum gap layer is, is because of the interference effect between the infrared radiation that it can have influence on the infrared radiation of incident and the layer that is reflected is reflected, thereby have influence on the average ir-absorbance of whole rete.If incident is the radiant light of single wavelength, then the height of this vacuum gap layer is generally 1/4 of wavelength.But what the present invention is directed to is the infrared radiating light of 8-14 mu m waveband, is not single wavelength, so the thickness of vacuum gap layer can not be chosen according to so simple standard.
In the selection and Thickness Design of different manufacturers to each film material, often be different.Use in the more non-cooling type ultrared micrometering kampometer each film material and thickness such as following table at present:
Figure GSB00000437548700041
In the above-mentioned non-cooling type ultrared micrometering kampometer, the material of absorption layer 21 and passivation layer 23 is selected silicon nitride (Si usually for use 3N 4), 5000
Figure GSB00000437548700042
Thick Si 3N 4Layer can absorb the incident infrared light of 50% 8-14 mu m waveband.1000
Figure GSB00000437548700043
Thick Si 3N 423 pairs of infrared lights of passivation layer also have absorption.Therefore, be 6000 to the total absorption thickness of infrared light in the existing non-cooling type ultrared micrometering kampometer
Figure GSB00000437548700044
But in the manufacture craft process, in growth 5000
Figure GSB00000437548700045
Si 3N 4Form very big compressive stress during absorption layer 21, this part compressive stress is by 1000 usually
Figure GSB00000437548700046
The tension stress of thick passivation layer 23 compensates, and realizes that total stress is 0, thereby has avoided the buckling deformation of bridge floor 20 as far as possible.But so, the tension stress in the passivation layer 23 will be very big, and this makes bridge floor fracture or demoulding easily, and technology difficulty is big.
The material of conductance layer 32 use in principle any conductive material can, but, therefore need suitably to select conductivity and the suitable material of thermal conductivity because conductance layer 32 also can heat conduction in conduction, require the design suitable dimensions according to heat conduction again.The material of conductance layer 32 is the NiCr alloy in the above-mentioned traditional rete, because the Si of NiCr alloy and passivation layer 33 or thermoresistance layer 31 3N 4Thermal expansivity differ bigger, therefore in its growth course, can produce bigger stress, thereby cause brachium pontis 30 fracture or demouldings easily.
Summary of the invention
The present invention will solve existing non-cooling type ultrared micrometering kampometer jackshaft face easy fracture or demoulding and cause the big technical matters of technology difficulty.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
Non-cooling type ultrared micrometering kampometer of the present invention comprises substrate base, the sheet bridge floor that contains the read output signal integrated circuit and is arranged on described bridge floor opposite side and is positioned at two L shaped brachium pontis on same plane with bridge floor.The end, one side and the described bridge floor of wherein said brachium pontis are electrically connected, and the another side end is connected on the described substrate base by being electrically connected post, thereby forms the vacuum gap layer between described bridge floor and described substrate base.Described substrate base upper surface is provided with one deck reflection horizon.Described bridge floor comprises absorption layer, heat-sensitive layer and bridge floor passivation layer from bottom to up successively; Described brachium pontis comprises thermoresistance layer and conductance layer from bottom to up successively.The thickness of the absorption layer of wherein said bridge floor and bridge floor passivation layer is 2800-3200
Figure GSB00000437548700051
The thickness of described vacuum gap layer is 1.8 μ m-2.2 μ m.
Preferably, the thickness of the absorption layer of described bridge floor and bridge floor passivation layer is 3000
Figure GSB00000437548700052
Wherein, also be provided with the brachium pontis passivation layer on the conductance layer of described brachium pontis, the thickness of this brachium pontis passivation layer is 2800-3200
Figure GSB00000437548700053
The thickness of the thermoresistance layer of described brachium pontis is 2800-3200
Figure GSB00000437548700054
The brachium pontis passivation layer of described brachium pontis and the thickness of thermoresistance layer are 3000
Figure GSB00000437548700055
The material of the conductance layer of described brachium pontis is a titanium; The material of described thermoresistance layer and brachium pontis passivation layer is silicon nitride.
Preferably, the thickness of described vacuum gap layer is 2.0 μ m.
The material of described absorption layer is silicon nitride, silicon oxynitride or titanium nitride.
The material of the bridge floor passivation layer of described bridge floor is silicon nitride, silicon oxynitride or silicon dioxide.
The advantage and the good effect of non-cooling type ultrared micrometering kampometer of the present invention are: among the present invention, the absorption layer of bridge floor and the thickness of passivation layer are 2800-3200 The thickness of the two is more approaching, so the easier realization balance of tension stress of the compressive stress that produces of absorption layer and passivation layer generation, thereby makes the structure of bridge floor highly stable, promptly can buckling deformation, also can not rupture or demoulding; So reduced technology difficulty of the present invention significantly.
Description of drawings
Fig. 1 is the perspective view of existing non-cooling type ultrared micrometering kampometer;
Fig. 2 is the A-A cut-open view among Fig. 1, expresses the structure of brachium pontis;
Fig. 3 is the B-B cut-open view among Fig. 1, the structure of expression bridge floor;
Fig. 4 represents the synoptic diagram that brachium pontis is connected with bridge floor in the existing non-cooling type ultrared micrometering kampometer;
Fig. 5 is the sectional view of expression brachium pontis in the non-cooling type ultrared micrometering kampometer of the present invention;
Fig. 6 is the sectional view of expression bridge floor in the non-cooling type ultrared micrometering kampometer of the present invention.
Fig. 7 is the synoptic diagram of the infrared average absorption rate of non-cooling type ultrared micrometering kampometer of the present invention with the vacuum gap layer thickness variation;
Fig. 8 is the synoptic diagram that the infrared average absorption rate of non-cooling type ultrared micrometering kampometer of the present invention changes with absorber thickness.
Reference numeral among the figure: 10. substrate base; 20. bridge floor; 30. brachium pontis; 40. electrical connection post; 50. vacuum gap layer; 11. reflection horizon; 21. absorption layer; 22. heat-sensitive layer; 23 bridge floor passivation layers, 33. brachium pontis passivation layers; 31. thermoresistance layer; 32. conductance layer; 60.PI release aperture.
Embodiment
As shown in Figure 5 and Figure 6, the decline structure of calorimetric radiometer of non-refrigeration of the present invention comprises: substrate base 10, sheet bridge floor 20 and be arranged on bridge floor 20 opposite sides and be positioned at two L shaped brachium pontis 30 on same plane with bridge floor 20.One side of brachium pontis 30 extend in the bridge floor 20, is attached thereto together, and the two overlapping realization is electrically connected, and the another side end of brachium pontis 30 is connected on the substrate 10 by being electrically connected post 40.Bridge floor 20 is unsettled above substrate base 10, is supported by two brachium pontis 30 and two electrical connection posts 40.
Substrate base 10 is generally silicon chip, and it contains the used integrated circuit of read output signal.Substrate base 10 upper surfaces are provided with one deck reflection horizon 11.Between the lower surface of bridge floor 20 and reflection horizon 11 upper surfaces, be formed with vacuum gap layer 50.
Bridge floor 20 comprises 3 layers, is absorption layer 21, heat-sensitive layer 22 and passivation layer 23 from bottom to up successively.
Brachium pontis 30 also is divided into 3 layers, is thermoresistance layer 31, conductance layer 32 and passivation layer 33 from the bottom to top successively.
Thermoresistance layer 31 on the brachium pontis 30 and 21 butt joints of the absorption layer on the bridge floor 20 link together, and also are to realize simultaneously on the technology.Make in the design that the thermal resistance value of thermoresistance layer 31 is bigger, run off slowly, take this to make the resistance variations that temperature rise caused of bridge floor enough big, can be recorded by the integrated circuit in the substrate 10 to guarantee the energy that absorption layer 21 is absorbed.The physical dimension design of bridge floor 20, brachium pontis 30 also will be satisfied bridge floor 20 simultaneously will reach stable temperature in the enough short time, so that read stable resistance.
Non-refrigeration of the present invention decline material and the thickness such as the following table of each rete in the preferred embodiment of calorimetric radiometer:
Figure GSB00000437548700071
Below describe the structure of each rete of bridge floor in the present embodiment in detail:
The material in reflection horizon 11 is aluminium (Al), and thickness is 1000 Most of metal all is good infrared reflector.1000
Figure GSB00000437548700073
Al the infrared radiation more than 99% can be reflected back.Al also is a metal line material common in the semiconductor technology simultaneously.This layer is grown by sputtering technology usually.The thickness in reflection horizon 11 is not limited to 1000
Figure GSB00000437548700081
Its thickness exists
Figure GSB00000437548700082
All be feasible in the scope.
Vacuum gap layer 50, thickness are 2.0 μ m.The thickness of vacuum gap layer 50 is important parameters.Behind the Infrared process passivation layer 23 of incident, heat-sensitive layer 22, the absorption layer 21, do not absorbed fully, a part can incide on the reflection horizon 11, is almost completely reflected back by Al reflection horizon 11.This part reflected light meeting and incident light produce interference effect.The power of interfering is relevant with the light path that light is passed by, and therefore can be subjected to the influence of vacuum gap layer 50 thickness.As shown in Figure 7, during design, find that the thickness mean transmissivity that whole film is when 2.6 μ m and 2.0 μ m of vacuum gap layer 50 is respectively 66.2% and 63.2%, differ smaller.But from technological angle, realize that vacuum gap floor height 2.6 μ m mean that the height that is electrically connected post also will be 2.6 μ m, this is the technology of comparison difficulty, and qualification rate is not high yet.Design vacuum gap height is 2.0 μ m, is under the prerequisite that not too influences mean transmissivity, greatly reduces technology difficulty.In the technological process, the height of vacuum gap all is an acceptable at 1.8-2.2 μ m.
In the present embodiment, selection vacuum gap thickness is that the benefit of 2.0 μ m is to have reduced technology difficulty.The height of vacuum gap is a distance between reflection horizon 11 upper surfaces of bridge floor lower surface and substrate 10 in fact just.Conductance layer 32 will enter by brachium pontis 30 from bridge floor 20 and be electrically connected post 40, link together with circuit in the substrate 10.Here just relate to from bridge floor 20 to substrate the difference in height 10, from technological angle, this difference in height is big more, and conductance layer 32 is easy opening circuit more just.Therefore, selecting this difference in height is 2.0 μ m, neither can influence whole absorptivity significantly, greatly reduces technology difficulty again.
The realization technology of vacuum gap layer 50 comprises:
A. spin coating one layer thickness is the polyimide (Polymide is abbreviated as PI) of 2 μ m on reflection horizon 11;
B.PI generates other rete of sheet bridge floor thereon successively and etches figure after solidifying;
C. remove PI with resist remover by PI release aperture 60, form hanging structure;
D. being encapsulated under the vacuum condition of chip carried out, and forms vacuum gap layer 50, its vacuum tightness＜50mTorr (6.6Pa);
The material of absorption layer 21 is Si 3N 4, thickness is 3000
Figure GSB00000437548700091
Its thickness is not limited to 3000
Figure GSB00000437548700092
At 2800-3200 All be feasible in the scope.This absorption layer 21 not only have the characteristic of infrared absorption, and the stress ratio of rete is lower usually by the growth of plasma reinforced chemical vapour deposition (PECVD) technology, is unlikely to cause the device distortion.The thickness of absorption layer 21 is not limited to 3000
Figure GSB00000437548700094
Its thickness exists
Figure GSB00000437548700095
All be feasible in the scope.The material of absorption layer 21 is not limited to Si 3N 4, can also be silicon oxynitride (SiO xN y) or titanium nitride (TiN) etc.
Si 3N 4Be the lower solid material of thermal conductivity, so the material of thermoresistance layer 31 is elected Si as 3N 4, thickness is 3000
Figure GSB00000437548700096
This layer realized simultaneously with absorption layer on technology.
The material of heat-sensitive layer 22 is VO x, thickness is 1000
Figure GSB00000437548700097
Its thickness exists
Figure GSB00000437548700098
All be feasible in the scope.Usually by the reactive sputtering process growth, the film that is obtained is the mixed crystal of the various oxides of vanadium oxide to this layer, as V 2O 3, VO 2, V 2O 5, V 3O 7Deng.The temperature-coefficient of electrical resistance of film is generally in 2%～3%/℃ scope.
The material of conductance layer 32 is titanium (Ti), and thickness is 1000
Figure GSB00000437548700099
Its thickness exists
Figure GSB000004375487000910
All be feasible in the scope.This layer is grown by sputtering technology usually.Conductance layer 32 materials also can be nickel-chromes etc.In the present embodiment, the material selection Ti of conductance layer, the ductility of Ti is better, and with the Si of passivation layer 33 or thermoresistance layer 31 3N 4Thermal expansivity differ less, the stress that therefore produces in its growth course is less, is not easy demoulding or fracture thereby lead brachium pontis 30.Certainly conductance layer also can adopt existing other materials to make.
The material of passivation layer 23 is Si 3N 4, thickness is 3000 Its thickness exists
Figure GSB000004375487000913
All be feasible in the scope.This passivation layer is grown by plasma reinforced chemical vapour deposition (PECVD) technology usually.The material of passivation layer 23 is not limited to Si 3N 4, can also be silicon oxynitride or silicon dioxide (SiO 2).
This passivation layer 23 has two effects:
A. protect the VO of below xThe characteristic of heat-sensitive layer 22 is avoided the influence of process conditions in subsequent technique.This also is the reason that this layer is called as passivation layer.
B. with absorption layer 21 in Si 3N 4Together, reach the purpose of infrared absorption.In fact, gross thickness is 6000
Figure GSB00000437548700101
Si 3N 4Layer can absorb the infrared radiation of about 66% 8-14 mu m waveband.
As shown in Figure 8, the gross thickness at absorption layer and passivation layer is 6000 Situation under, whole film layer structure is little with the variation in thickness of absorption layer in the average absorption rate of 8-14 μ m, less than 1%.In the present embodiment, the thickness of absorption layer 21 and passivation layer 23 all is designed to 3000
Figure GSB00000437548700103
Total absorption thickness is 6000
Figure GSB00000437548700104
But the thickness of absorption layer 21 and passivation layer 23 equates to make compressive stress and the easier realization balance of tension stress, thereby makes the structure of bridge floor 20 highly stable, promptly can buckling deformation, also can not rupture or demoulding; So reduced technology difficulty of the present invention significantly.
Below be the structure of each rete of brachium pontis:
The material of thermoresistance layer 31 is Si 3N 4, thickness is 3000 Its thickness is not limited to 3000
Figure GSB00000437548700106
Preferred thickness range is 2800-3200
Figure GSB00000437548700107
The material of conductance layer 32 is Ti, and thickness is 1000
Figure GSB00000437548700108
Its thickness is not limited to 1000
Figure GSB00000437548700109
At 500-1200 All be feasible in the scope.
The material of passivation layer 33 is Si 3N 4, thickness is 3000
Figure GSB000004375487001011
Its thickness is not limited to 3000 Preferred thickness range is 2800-3200
Figure GSB000004375487001013
Usually at 1000-3200
Figure GSB000004375487001014
In the scope, the brachium pontis place also can not be provided with passivation layer 33 among the present invention certainly, and promptly the thickness of passivation layer 33 is 0.
Manufacture craft is identical with existing technology in the non-cooling type ultrared micrometering kampometer of present embodiment, repeats no more here.

Claims (9)

1. non-cooling type ultrared micrometering kampometer, comprise substrate base (10), the sheet bridge floor (20) that contains the read output signal integrated circuit and be arranged on described bridge floor (20) opposite side and be positioned at two L shaped brachium pontis (30) on same plane with bridge floor (20), the end, one side of wherein said brachium pontis (30) and described bridge floor (20) are electrically connected, the another side end is connected on the described substrate base (10) by being electrically connected post (40), thereby forms vacuum gap layer (50) between described bridge floor (20) and described substrate base (10); Described substrate base (10) upper surface is provided with one deck reflection horizon (11); Described bridge floor (20) comprises absorption layer (21), heat-sensitive layer (22) and bridge floor passivation layer (23) from bottom to up successively; Described brachium pontis (30) comprises thermoresistance layer (31) and conductance layer (32) from bottom to up successively; It is characterized in that: the absorption layer (21) of described bridge floor (20) and the thickness of bridge floor passivation layer (23) are 2800-3200 The thickness of described vacuum gap layer (50) is 1.8 μ m-2.2 μ m.
2. non-cooling type ultrared micrometering kampometer according to claim 1 is characterized in that, the absorption layer (21) of described bridge floor (20) and the thickness of bridge floor passivation layer (23) are 3000
3. non-cooling type ultrared micrometering kampometer according to claim 1 is characterized in that, also is provided with brachium pontis passivation layer (33) on the conductance layer (32) of described brachium pontis (30), and the thickness of this brachium pontis passivation layer (33) is 2800-3200
Figure FSB00000437548600013
4. non-cooling type ultrared micrometering kampometer according to claim 3 is characterized in that, the thickness of the thermoresistance layer (31) of described brachium pontis (30) is 2800-3200
Figure FSB00000437548600014
5. non-cooling type ultrared micrometering kampometer according to claim 4 is characterized in that, the brachium pontis passivation layer (33) of described brachium pontis (30) and the thickness of thermoresistance layer (31) are 3000
Figure FSB00000437548600015
6. non-cooling type ultrared micrometering kampometer according to claim 5 is characterized in that, the material of the conductance layer (32) of described brachium pontis (30) is a titanium; The material of described thermoresistance layer (31) and brachium pontis passivation layer (33) is silicon nitride.
7. according to each described non-cooling type ultrared micrometering kampometer of claim 1-6, it is characterized in that the thickness of described vacuum gap layer (50) is 2.0 μ m.
8. according to each described non-cooling type ultrared micrometering kampometer of claim 1-6, it is characterized in that the material of described absorption layer (21) is silicon nitride, silicon oxynitride or titanium nitride.
9. non-cooling type ultrared micrometering kampometer according to claim 8 is characterized in that, the material of the bridge floor passivation layer (23) of described bridge floor (20) is silicon nitride, silicon oxynitride or silicon dioxide.
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